CN110265316B - Method for acquiring offset splinter load in semiconductor material cleavage process - Google Patents

Method for acquiring offset splinter load in semiconductor material cleavage process Download PDF

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CN110265316B
CN110265316B CN201910573847.1A CN201910573847A CN110265316B CN 110265316 B CN110265316 B CN 110265316B CN 201910573847 A CN201910573847 A CN 201910573847A CN 110265316 B CN110265316 B CN 110265316B
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load
point
wafer
offset
stress
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姜晨
高睿
董康佳
郎小虎
任绍彬
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University of Shanghai for Science and Technology
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    • G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
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    • H—ELECTRICITY
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    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/0058—Kind of property studied
    • G01N2203/006—Crack, flaws, fracture or rupture
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    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
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    • G01N2203/067—Parameter measured for estimating the property
    • G01N2203/0676—Force, weight, load, energy, speed or acceleration
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    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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    • G01N2203/067—Parameter measured for estimating the property
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Abstract

The invention relates to a method for acquiring offset splinter load in the process of semiconductor material cleavage, which comprises the following steps: scribing a wafer with a blade to generate a scratch,measuring the length L of the scratch, the thickness H of the wafer and the depth a of the scratch according to the scratch on the wafer, and establishing a two-dimensional coordinate system according to the central point O at the bottom of the scratch as an origin to obtain O1And O2And further judging the minimum offset splinter load required by the wafer fracture according to a dissociation fracture stress formula.

Description

Method for acquiring offset splinter load in semiconductor material cleavage process
Technical Field
The invention relates to the technical field of semiconductor optoelectronic device processes, in particular to a method for acquiring offset splinter load in a semiconductor material cleavage process.
Background
The semiconductor industry has rapidly developed with the last round of computer and internet technology revolution. Among them, the chip, as a core component of the computer, accounts for the most part of the cost of the whole computer, so that the chip presents a vigorous development situation in the following decades.
In recent years, the chip industry in China has rapidly developed, but the manufacturing technology level of the integrated circuit chip in China is greatly different from the advanced level in the world, and the manufacturing technology level is still in the beginning stage. A series of specific processing technologies are required in the chip manufacturing process, wherein the splitting process belongs to one of the important steps in the packaging link, namely, the crystal grains are stripped from the wafer. The cleavage cracks are in a destabilization and expansion state due to factors such as overlarge load and the like in the splitting process, and the generated cleavage cracks directly influence the service quality and the service life of the chip. Meanwhile, the critical load required by the dissociation of wafers with different thicknesses is difficult to measure in real time under the existing conditions, and the production efficiency is low.
Disclosure of Invention
The present invention is made to solve the above problems, and an object of the present invention is to provide a method for obtaining an offset chipping load in a semiconductor material cleaving process.
The invention provides a method for acquiring offset splinter load in the process of semiconductor material cleavage, which is characterized by comprising the following steps: step 1: scribing a wafer with a blade to generate a scratch, and measuring the length L of the scratch and the length of the waferThe circle thickness H and the scribing depth a are obtained by establishing a two-dimensional coordinate system by taking a central point O at the bottom of the scratch as an origin to obtain O1And O2At O in2Point applied load P0Establishing a stress function model based on three-point bending fracture to obtain a stress function sigma of the O point1(x1,y1)：
Figure GDA0002767814830000021
Step 2: with O1The point is the coordinate origin, the coordinate of the point O is (a, b), a stress function sigma (x, y) of the new point O is established, and x is x1-a，y＝y1B, the new stress function σ (x, y) is expressed as:
Figure GDA0002767814830000022
and step 3: in the direction of O2When a load is applied to the point, the ideal contact point O is deviated2Let the offset be l when the contact point is O2When the load is deviated to the left side, the load is deviated PLeft side ofWhen the contact point O is reached as shown in the formula (3)2When the load is shifted to the right, the load is shiftedRight sideAs shown in equation (4):
Figure GDA0002767814830000023
Figure GDA0002767814830000024
and 4, step 4: when the load is directed to the point O, the combination of the formulas (2), (3) and (4)2Stress function sigma of point O at left offsetLeft side of(a, b) when the load is directed to the point O as shown in equation (5)2Stress function σ of point O at right offsetRight side(a, b) is as shown in equation (6):
Figure GDA0002767814830000025
Figure GDA0002767814830000026
and 5: when the stress at the O point is larger than the dissociative fracture stress, the wafer is cleaved and fractured, and the applied offset load P0The minimum load required by the wafer can be achieved; when the stress at the O point is smaller than the dissociative fracture stress, the wafer is not cleaved and fractured, the load required by the wafer cannot be met, and the applied offset load P should be increased0，Stress at break of dissociation σmCan be expressed as:
Figure GDA0002767814830000031
gamma is surface energy, E is elastic modulus, and S is distance between wafer atoms;
step 6: at O2Point applied load, when the load is shifted to the left by the contact point O2When the offset is l, the required offset lobe load P can be obtained according to the formulas (5) and (7)1When the load is shifted to the right side by the contact point O as shown in equation (8)2When the offset is l, the required offset lobe load P can be obtained according to the formulas (6) and (7)2As shown in formula (9):
Figure GDA0002767814830000032
Figure GDA0002767814830000033
in the method for acquiring the offset splinter load in the semiconductor material cleavage process, the method can also have the following characteristics: wherein, O1Is any point on the cross section of the wafer where the point O of the wafer is located.
The offset splinter load in the cleavage process of the semiconductor material provided by the inventionThe acquisition method of (2) may further have the following features: wherein, O2The spot is directly above the O-spot and on the wafer surface.
In the method for acquiring the offset splinter load in the semiconductor material cleavage process, the method can also have the following characteristics: wherein, the load applied in the wafer cracking process is a linear load.
Action and Effect of the invention
According to the method for acquiring the offset fragment load in the semiconductor material cleavage process, the scratch length L, the wafer thickness H and the scribing depth a are measured according to the scratch on the wafer, and the two-dimensional coordinate system is established by taking the central point O at the bottom of the scratch as the origin to obtain O1And O2And further judging the minimum offset splinter load required by the wafer fracture according to a dissociation fracture stress formula. Therefore, the method can accurately calculate the minimum offset cracking load required by wafer fracture, so that the cleavage cracks are in a normal cleavage state in the cracking process, the generated cleavage cracks improve the service quality and the service life of the chip, and simultaneously, more ideal cleavage fracture surfaces can be obtained.
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FIG. 1 is a cross-sectional view of a coordinate point and a force point on a wafer in an embodiment of the invention.
Detailed Description
In order to make the technical means, the creation features, the achievement objects and the effects of the present invention easy to understand, the following embodiments are specifically described with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view of a coordinate point and a force point on a wafer in an embodiment of the invention.
Step 1: as shown in fig. 1, a blade is used to scribe a wafer to generate a scratch, the length L of the scratch, the thickness H of the wafer, and the depth a of the scratch are measured, a two-dimensional coordinate system is established with a central point O at the bottom of the scratch as an origin to obtain O1And O2，O1Is any point on the wafer cross section where the O point of the wafer isYi Dian, O2The spot is directly above the O spot and on the wafer surface. At O2Point applied load P0Establishing a stress function model based on three-point bending fracture to obtain a stress function sigma of the O point1(x1,y1)：
Figure GDA0002767814830000051
Step 2: with O1The point is the coordinate origin, the coordinate of the point O is (a, b), a stress function sigma (x, y) of the new point O is established, and x is x1-a，y＝y1B, the new stress function σ (x, y) is expressed as:
Figure GDA0002767814830000052
and step 3: in the direction of O2When a load is applied to the point, the ideal contact point O is deviated2Let the offset be l when the contact point is O2When the load is deviated to the left side, the load is deviated PLeft side ofWhen the contact point O is reached as shown in the formula (3)2When the load is shifted to the right, the load is shiftedRight sideAs shown in equation (4):
Figure GDA0002767814830000053
Figure GDA0002767814830000054
and 4, step 4: when the load is directed to the point O, the combination of the formulas (2), (3) and (4)2Stress function sigma of point O at left offsetLeft side of(a, b) when the load is directed to the point O as shown in equation (5)2Stress function σ of point O at right offsetRight side(a, b) is as shown in equation (6):
Figure GDA0002767814830000055
Figure GDA0002767814830000056
and 5: when the stress at the O point is larger than the dissociative fracture stress, the wafer is cleaved and fractured, and the applied offset load P0The minimum load required by the wafer can be achieved; when the stress at the O point is smaller than the dissociative fracture stress, the wafer is not cleaved and fractured, the load required by the wafer cannot be met, and the applied offset load P should be increased0The load applied during the wafer cracking process is linear load, and the stress of dissociation rupture ismCan be expressed as:
Figure GDA0002767814830000061
γ is the surface energy, E is the elastic modulus, and S is the wafer interatomic distance.
Step 6: at O2Point applied load, when the load is shifted to the left by the contact point O2When the offset is l, the required offset lobe load P can be obtained according to the formulas (5) and (7)1When the load is shifted to the right side by the contact point O as shown in equation (8)2When the offset is l, the required offset lobe load P can be obtained according to the formulas (6) and (7)2As shown in formula (9):
Figure GDA0002767814830000062
Figure GDA0002767814830000063
the calculated offset splinter load can be accurately applied to the wafer, and then the cleavage crack of the wafer is in a normal state in the splinter process, so that the quality and the service life of the chip are greatly improved.
Effects and effects of the embodiments
According to the invention, a semiconductor is providedThe method for acquiring the offset splinter load in the cleavage process of the bulk material comprises the steps of measuring the scratch length L, the wafer thickness H and the scratch depth a according to the scratch on the wafer, and establishing a two-dimensional coordinate system according to the central point O at the bottom of the scratch as an origin to obtain O1And O2And further judging the minimum offset fragment load required by the wafer fracture according to a dissociation fracture stress formula. Therefore, the method can accurately calculate the minimum offset fracture load required by wafer fracture, so that the cleavage cracks are in a normal state in the fracture process, the generated cleavage cracks improve the service quality and the service life of the chip, and simultaneously, more ideal cleavage fracture surfaces can be obtained.
Furthermore, the load applied in the wafer cracking process is a linear load, so that the applied load can be controlled more easily and accurately, and the condition that the wafer cleavage crack is out of control in the whole cracking process can be further ensured.
The above embodiments are preferred examples of the present invention, and are not intended to limit the scope of the present invention.

Claims (4)

1. A method for acquiring offset lobe load in the semiconductor material cleavage process is characterized by comprising the following steps:
step 1: the method comprises the steps of using a blade to scratch a wafer to generate a scratch, measuring the length L of the scratch, the thickness H of the wafer and the depth a of the scratch, establishing a two-dimensional coordinate system by taking a central point O at the bottom of the scratch as an origin to obtain O1And O2At O in2Point applied load P0Establishing a stress function model based on three-point bending fracture to obtain a stress function sigma of the O point1(x1,y1)：
Figure FDA0002767814820000011
Step 2: with O1The point is the origin of coordinates, and the coordinates of the point O are (b, a), O2Point coordinate is (c, d), | c | H |, and new stress function σ (x, y) of point O is created, x ═ H |, andx1-a，y＝y1b, the new stress function σ (x, y) is expressed as:
Figure FDA0002767814820000012
and step 3: in the direction of O2When a load is applied to the point, the ideal contact point O is deviated2Let the offset be l when the contact point is O2When the load is deviated to the left side, the load is deviated PLeft side ofWhen the contact point O is reached as shown in the formula (3)2When the load is shifted to the right, the load is shiftedRight sideAs shown in equation (4):
Figure FDA0002767814820000013
Figure FDA0002767814820000014
and 4, step 4: when the load is directed to the point O, the combination of the formulas (2), (3) and (4)2Stress function sigma of point O at left offsetLeft side of(a, b) when the load is directed to the point O as shown in equation (5)2Stress function σ of point O at right offsetRight side(a, b) is as shown in equation (6):
Figure FDA0002767814820000015
Figure FDA0002767814820000016
and 5: when the stress of the O point is larger than the dissociative fracture stress, the wafer is cracked, and the applied offset load P0The minimum load required by the wafer can be reached; when the stress of the O point is smaller than the dissociative fracture stress, the wafer is not cleaved and fractured, and the requirement of the wafer cannot be metShould increase the applied offset load P0Stress at break of dissociation σmCan be expressed as:
Figure FDA0002767814820000021
gamma is surface energy, E is elastic modulus, and S is distance between wafer atoms;
step 6: at O2Point applied load, when the load is shifted to the left by the contact point O2When the offset is l, the required offset lobe load P can be obtained according to the formulas (5) and (7)1When the load is shifted to the right by the contact point O as shown in equation (8)2When the offset is l, the required offset lobe load P can be obtained according to the formulas (6) and (7)2As shown in formula (9):
Figure FDA0002767814820000022
Figure FDA0002767814820000023
2. the method for acquiring the offset fragment load in the semiconductor material cleavage process according to claim 1, wherein:
wherein, O1The point O of the wafer is any point on the cross section of the wafer.
3. The method for acquiring the offset fragment load in the semiconductor material cleavage process according to claim 1, wherein:
wherein, O2The point is located directly above the O point and on the wafer surface.
4. The method for acquiring the offset fragment load in the semiconductor material cleavage process according to claim 1, wherein:
wherein the load applied in the wafer cracking process is a linear load.
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