CN110262191A - A kind of calculating lithography modeling method and device - Google Patents
A kind of calculating lithography modeling method and device Download PDFInfo
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- CN110262191A CN110262191A CN201910385455.2A CN201910385455A CN110262191A CN 110262191 A CN110262191 A CN 110262191A CN 201910385455 A CN201910385455 A CN 201910385455A CN 110262191 A CN110262191 A CN 110262191A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
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Abstract
This application involves ic manufacturing technology fields, disclose a kind of calculating lithography modeling method and device, in the method, by the type for obtaining the graphic element that resolution chart includes, it determines optical module group, then according to optical module group, obtains the parameter of physical optics model.The ideal light distribution of calculating optical module group on a photoresist, and the photochemical reaction excited on the photoresist according to ideal light distribution and optical module group, obtain the parameter of photochemical model.Then the boundary position that simulation test figure is formed on the photoresist, and obtain the critical size emulation data of the resolution chart, if the error of fitting between critical size measurement data and critical size emulation data is not more than preset allowable error, calculating lithography model is established.Calculating lithography modeling method disclosed in the present application, emulates different graphic elements by establishing different optical modules, effectively increases the precision for calculating lithography model.
Description
Technical field
This application involves ic manufacturing technology field more particularly to a kind of calculating lithography modeling method and devices.
Background technique
With the development of photoetching process, the size of device develops to ultra-deep sub-micro from sub-micron in ic manufacturing process
Rice, the i.e. crucial line width of device constantly reduce.With the diminution of device critical line width, the optical adjacent in photo-etching technological process is imitated
(Optical Proximity Effect, OPE) is answered increasingly to highlight, OPE refers to due to the diffraction phenomena of lithography system and each
Kind physical chemistry effect, so that it is pre-designed the figure on mask, after being transferred to crystal column surface, acquired figure
Various distortion are generated, such as line thickness narrows.In order to solve this problem, adjacent usually using the optics based on model at present
Nearly effect calibration (Optical Proximity Correction, OPC) technology, does centainly mask graph before photoetching
Correction, and then lithographic results is enable to coincide with the result that is pre-designed.
OPC technology key based on model is to establish accurate calculating lithography model.Calculating lithography model includes physics
Optical model and photochemical model, wherein the model that physical optics model is established primarily directed to optical module, photochemistry mould
The model that type is established primarily directed to a series of photochemical reactions occurred on photoresist.The two models can pass through one
The model parameter (including physical optics model parameter and photochemical model parameter) of series describes, these model parameters needs make
It is fitted with measurement data, fitting result is better, means that the precision for calculating lithography model is higher, wherein measurement data refers to
The figure being scribed on mask that will be used to test, i.e. resolution chart, are transferred to after crystal column surface, to the upper figure of crystal column surface
The line width of shape measures resulting data.It can be said that establishing the process for calculating lithography model, it is equivalent to and model parameter is carried out
The process of optimization.Therefore establish calculate lithography model during, need constantly to be based on model parameter, to resolution chart into
Row emulation, and obtained emulation data are fitted with measurement data, by judging whether fitting result meets preset item
Part to determine whether optimizing to parameter, and then establishes accurate calculating lithography model.
Resolution chart is the set of some graphic elements with characteristic feature, such as isolated lines (isoline), intensive
The graphic element set of lines (dense), line end (line_end) and other special designings, a resolution chart is usually by several
Thousand above-mentioned graphic element compositions.In one group of calculating lithography model parameter, physical optics mould corresponding to an optical module
Shape parameter, when a resolution chart is emulated and is fitted, for different graphic elements, acquired fitting result
Difference, and then cause when optimizing model parameter, to will be unable to the precision for guaranteeing optimum results using fitting result.Cause
This, as increasingly complexity, the precision for calculating lithography model of resolution chart will be unable to the requirement for meeting photoetching process.
Summary of the invention
In order to improve the precision for calculating lithography model, the application discloses a kind of calculating lithography modeling side by following embodiment
Method and device.
The application's in a first aspect, disclosing a kind of calculating lithography modeling method, comprising:
Obtain the type for the graphic element that resolution chart includes, wherein the resolution chart refers to the mask for test
Domain shape；
According to the type of the graphic element, optical module group is determined, wherein the optical module group is by multiple optical modes
Block composition；
According to the optical module group, the parameter of physical optics model is obtained；
According to the optical module group and the resolution chart, the ideal of the optical module group on a photoresist is calculated
Light distribution, the ideal light distribution includes the ideal light distribution of each described optical module on a photoresist；
According to the photochemical reaction that the ideal light distribution and the optical module group excite on the photoresist,
Obtain the parameter of photochemical model；
It obtains the photoresist and photochemically reactive threshold condition occurs, and according to the threshold condition and the ideal
The boundary position that the resolution chart is formed on the photoresist is simulated in light distribution；
The critical size measurement data of the resolution chart is obtained, and according to the boundary position, obtains the test
The critical size of figure emulates data；
If the error of fitting between the critical size measurement data and critical size emulation data is no more than described
Preset allowable error is established and is calculated then according to the parameter of the physical optics model and the parameter of the photochemical model
Lithography model, the calculating lithography model includes physical optics model and photochemical model.
Optionally, it if the error of fitting is greater than the preset allowable error, according to Newton iteration method, reacquires
The parameter of the physical optics model and the parameter of the photochemical model optimize the calculating lithography model.
Optionally, the type according to the graphic element, determines optical module group, comprising:
According to the type of the graphic element, the resolution chart is classified；
Obtain each class testing figure specific gravity shared in the resolution chart；
Determine the corresponding optical module of each class testing figure；
According to each class testing figure specific gravity shared in the resolution chart, each class testing figure is determined
The weight coefficient of the corresponding optical module of shape；
By the corresponding optical module of each class testing figure, it is combined according to respective weight coefficient, determines institute
State optical module group.
Optionally, the parameter of the physical optics model includes the corresponding optical parameter of each described optical module；
Wherein, the corresponding optical parameter of each described optical module include: lighting source parameter, pupil lens parameter with
And imaging depth parameter.
Optionally, the parameter of the photochemical model includes that each described optical module excites on the photoresist
Photochemical reaction parameter；
Wherein, the photochemical reaction parameter that each described optical module excites on the photoresist includes: the light
Learn the standard deviation of the weight coefficient of module, the weight coefficient of the ideal light distribution diffusion term of the optical module, Gaussian function
And the order of Laguerre polynomials.
Optionally,
It is calculated by the following formula the boundary position, the boundary position is that the optical module group is based on the test
The coordinate set for the photoresist picture that figure is formed on the photoresist:
Wherein, i indicates i-th of optical module；ciIndicate the weight coefficient of i-th of optical module；Ri(xk,yk) table
Show based on the resolution chart, the photoresist picture that i-th of optical module is formed on a photoresist；(xk,yk) indicate based on described
Resolution chart, the coordinate for the photoresist picture that i-th of optical module is formed on a photoresist；T indicates that light occurs for the photoresist
The threshold condition of chemical reaction.
Optionally, the resolution chart, the photoresist picture that i-th of optical module is formed on a photoresist are based on are as follows:
Wherein, j indicates j-th of diffusion term of the ideal light distribution of i-th of optical module, ljIndicate described i-th
The weight coefficient of j-th of diffusion term of the ideal light distribution of a optical module, Ii(x, y) indicates i-th of optical module
Ideal light distribution on the photoresist,Indicate Gauss Laguerre basic function, sjIndicate the Gaussian function
Standard deviation, pjIndicate the order of the Laguerre polynomials.
Optionally, the error of fitting are as follows:
Err=∑ | MeasureCD-SimulationCD|2；
Wherein, err indicates the error of fitting, MeasureCDIndicate the critical size measurement data,
SimulationCDIndicate the critical size emulation data.
In the second aspect of the application, a kind of calculating lithography modeling device is disclosed, comprising:
Figure obtains module, for obtaining the type for the graphic element that resolution chart includes, wherein the resolution chart is
Refer to the mask graph for test；
Optical module group determining module determines optical module group for the type according to the graphic element, wherein institute
Optical module group is stated to be made of multiple optical modules；
Physical optics model parameter obtains module, for obtaining the ginseng of physical optics model according to the optical module group
Number；
Ideal light intensity computing module, for calculating the optics according to the optical module group and the resolution chart
The ideal light distribution of module group on a photoresist, the ideal light distribution includes each described optical module in photoresist
On ideal light distribution；
Photochemical model parameter acquisition module is used for according to the ideal light distribution and the optical module group in institute
The photochemical reaction excited on photoresist is stated, the parameter of photochemical model is obtained；
For obtaining the photoresist photochemically reactive threshold condition occurs for analog module, and according to the threshold value item
Part and the ideal light distribution, simulate the boundary position that the resolution chart is formed on the photoresist；
Data acquisition module, for obtaining the critical size measurement data of the resolution chart, and according to the boundary
Position obtains the critical size emulation data of the resolution chart；
Model building module, for quasi- between the critical size measurement data and critical size emulation data
When closing error no more than preset allowable error, according to the parameter of the physical optics model and the ginseng of the photochemical model
Number is established and calculates lithography model, and the calculating lithography model includes physical optics model and photochemical model.
Optionally, described device further include:
Optimization module is used for when the error of fitting is greater than the preset allowable error, according to Newton iteration method, weight
The parameter of the physical optics model and the parameter of the photochemical model are newly obtained, the calculating lithography model is carried out excellent
Change.
Optionally, the optical module group determining module includes:
Resolution chart taxon classifies the resolution chart for the type according to the graphic element；
Specific gravity acquiring unit, for obtaining each class testing figure specific gravity shared in the resolution chart；
Optical module determination unit, for determining the corresponding optical module of each class testing figure；
Weight coefficient determination unit, for the ratio shared in the resolution chart according to each class testing figure
Weight, determines the weight coefficient of the corresponding optical module of each class testing figure；
Optical module group determination unit, for by the corresponding optical module of each class testing figure, according to respective
Weight coefficient is combined, and determines the optical module group.
Optionally, the parameter of the physical optics model includes the corresponding optical parameter of each described optical module；
Wherein, the corresponding optical parameter of each described optical module include: lighting source parameter, pupil lens parameter with
And imaging depth parameter.
Optionally, the parameter of the photochemical model includes that each described optical module excites on the photoresist
Photochemical reaction parameter；
Wherein, the photochemical reaction parameter that each described optical module excites on the photoresist includes: the light
Learn the standard deviation of the weight coefficient of module, the weight coefficient of the ideal light distribution diffusion term of the optical module, Gaussian function
And the order of Laguerre polynomials.
Optionally, the analog module is also used to be calculated by the following formula the boundary position, and the boundary position is
The coordinate set for the photoresist picture that the optical module group is formed on the photoresist based on the resolution chart:
Wherein, i indicates i-th of optical module；ciIndicate the weight coefficient of i-th of optical module；Ri(xk,yk) table
Show based on the resolution chart, the photoresist picture that i-th of optical module is formed on a photoresist；(xk,yk) indicate based on described
Resolution chart, the coordinate for the photoresist picture that i-th of optical module is formed on a photoresist；T indicates that light occurs for the photoresist
The threshold condition of chemical reaction.
Optionally, the resolution chart, the photoresist picture that i-th of optical module is formed on a photoresist are based on are as follows:
Wherein, j indicates j-th of diffusion term of the ideal light distribution of i-th of optical module, ljIndicate described i-th
The weight coefficient of j-th of diffusion term of the ideal light distribution of a optical module, Ii(x, y) indicates i-th of optical module
Ideal light distribution on the photoresist,Indicate Gauss Laguerre basic function, sjIndicate the Gaussian function
Standard deviation, pjIndicate the order of the Laguerre polynomials.
Optionally, the error of fitting are as follows:
Err=∑ | MeasureCD-SimulationCD|2；
Wherein, err indicates the error of fitting, MeasureCDIndicate the critical size measurement data,
SimulationCDIndicate the critical size emulation data.
This application discloses a kind of calculating lithography modeling method and devices, in the method, by obtaining resolution chart packet
The type of the graphic element contained determines optical module group, then according to optical module group, obtains the parameter of physical optics model.
Then the ideal light distribution of calculating optical module group on a photoresist, and existed according to ideal light distribution and optical module group
The photochemical reaction excited on the photoresist obtains the parameter of photochemical model.Then simulation test figure is in the photoetching
The boundary position formed on glue, and obtain the resolution chart critical size emulation data, if critical size measurement data with
Critical size emulates the error of fitting between data and is not more than preset allowable error, then establishes calculating lithography model.The application
Disclosed calculating lithography modeling method, for graphic element different in resolution chart, by establish different optical modules into
Row emulation and fitting, effectively increase the precision for calculating lithography model, in the higher situation of resolution chart complexity, Neng Goubao
The precision that card calculates lithography model meets photoetching process requirement.
Detailed description of the invention
In order to illustrate more clearly of the technical solution of the application, letter will be made to attached drawing needed in the embodiment below
Singly introduce, it should be apparent that, for those of ordinary skills, without creative efforts, also
Other drawings may be obtained according to these drawings without any creative labor.
Fig. 1 is a kind of workflow schematic diagram for calculating lithography modeling method disclosed in the embodiment of the present application；
Fig. 2 is to determine the workflow of optical module group in a kind of calculating lithography modeling method disclosed in the embodiment of the present application
Journey schematic diagram；
Fig. 3 A is in a kind of calculating lithography modeling method disclosed in the embodiment of the present application, first kind resolution chart is included
The schematic diagram of graphic element；
Fig. 3 B is in a kind of calculating lithography modeling method disclosed in the embodiment of the present application, the second class testing figure is included
The schematic diagram of graphic element；
Fig. 3 C is in a kind of calculating lithography modeling method disclosed in the embodiment of the present application, third class testing figure is included
The schematic diagram of graphic element；
Fig. 3 D is in a kind of calculating lithography modeling method disclosed in the embodiment of the present application, other class testing figures is included
The schematic diagram of graphic element；
Fig. 4 is the schematic diagram of light source type in a kind of calculating lithography modeling method disclosed in the embodiment of the present application；
Fig. 5 is the structural representation of physical optics model in a kind of calculating lithography modeling method disclosed in the embodiment of the present application
Figure；
Fig. 6 is in a kind of calculating lithography modeling method disclosed in the embodiment of the present application, the structure of photoresist imaging depth is shown
It is intended to；
Fig. 7 is in a kind of calculating lithography modeling method disclosed in the embodiment of the present application, critical size emulates the signal of data
Figure；
Fig. 8 is to judge whether the work of Optimized model in a kind of calculating lithography modeling method disclosed in the embodiment of the present application
Flow diagram；
Fig. 9 is the workflow schematic diagram that another kind disclosed in the embodiment of the present application calculates lithography modeling method；
Figure 10 is in a kind of calculating lithography modeling method disclosed in the embodiment of the present application, various light sources irradiates formed photoresist
The result schematic diagram of picture；
Figure 11 is a kind of structural schematic diagram for calculating lithography modeling device disclosed in the embodiment of the present application.
Specific embodiment
In order to improve the precision for calculating lithography model, the application discloses a kind of calculating lithography modeling side by following embodiment
Method and device.
The application first embodiment discloses a kind of calculating lithography modeling method, workflow signal shown in Figure 1
Figure, this method comprises:
Step S110 obtains the type for the graphic element that resolution chart includes, wherein the resolution chart refers to for surveying
The mask graph of examination.
Step S120 determines optical module group according to the type of the graphic element, wherein the optical module group by
Multiple optical module compositions.
Shown in Figure 2, Fig. 2 is the disclosed type according to the graphic element of the embodiment of the present application, determines optical mode
The workflow schematic diagram of block group, comprising:
Step S1201 classifies the resolution chart according to the type of the graphic element.
In actual production, thousands of a graphic elements are generally comprised in a mask graph for test.The application
In embodiment, according to the type of graphic element, resolution chart is greatly classified into first kind resolution chart, the second class testing figure
Shape, third class testing figure and other class testing figures.Wherein, first kind resolution chart includes isoline, inv_
Isoline, double and dense these types graphic element, the second class testing figure include line_end, inv_line_end and
Dense_line_end these types graphic element, third class testing figure includes this graphic element of dense_contact, other
Class testing figure is the set of some special graphic elements, such as Iso_pad_single, broken_H and lin_end_
The graphic elements such as crowed.Referring to attached drawing 3A- attached drawing 3D, wherein Fig. 3 A illustratively gives first kind resolution chart and wrapped
The schematic diagram of the graphic element contained, Fig. 3 B illustratively give the signal for the graphic element that the second class testing figure is included
Figure, Fig. 3 C illustratively give the schematic diagram for the graphic element that third class testing figure is included, and Fig. 3 D is illustratively provided
The schematic diagram for the graphic element that other class testing figures are included.
Step S1202 obtains each class testing figure specific gravity shared in the resolution chart.
Step S1203 determines the corresponding optical module of each class testing figure.
In one implementation, by obtaining the type for the graphic element that resolution chart is included, by resolution chart point
Class, and then determine corresponding optical module, form the optical module group of physical optics model.It, can be with when determining optical module
Will in practical applications, for the best any light source of a certain class testing graphical simulation effect as its corresponding optical mode
Block.Specifically, being directed to first kind resolution chart, the first optical module is determined；For the second class testing figure, the second optics is determined
Module；For third class testing figure, third optical module is determined；For other class testing figures, N optical module is determined.
Optical module quantity needs the quantity classified according to resolution chart in practical application to determine.
In actual process production, generallys use coherent source and constitute optical module, common coherent source includes but not
Be limited to following several: annular light source, bipolar light source, quadrupole symmetrical light sources and the asymmetric light source of quadrupole, Fig. 4 are illustratively provided
The schematic diagram of annular light source, bipolar light source and the asymmetric light source of quadrupole.Quadrupole symmetrical light sources are identical as bipolar light source type,
However, bipolar light source, there are two sector, quadrupole symmetrical light sources have 4 sectors.
Step S1204 is determined described every according to each class testing figure specific gravity shared in the resolution chart
The weight coefficient of the corresponding optical module of a kind of resolution chart.
Wherein, the specific gravity shared in entire resolution chart according to each class testing figure, can obtain each class testing
Figure and then can determine corresponding to each class testing figure the significance level of entire resolution chart according to significance level
Optical module weight coefficient.
The corresponding optical module of each class testing figure is carried out group according to respective weight coefficient by step S1205
It closes, determines the optical module group.
The embodiment of the present application is disclosed to calculate lithography modeling method, different types of graphic element is based on, by resolution chart
Classify, and then determine multiple optical modules, optical module group is constructed, so that the calculating lithography model finally established, energy
It is enough that all there is preferable fitting effect on graphic element not of the same race.
Step S130 obtains the parameter of physical optics model according to the optical module group.
It is shown in Figure 5, calculate lithography model in, a typical physical optics model mainly by light source, mask,
Pupil lens and these components of imaging plane are constituted.In conjunction with physical optics model, the process of photoetching process can be by following
Process is summarized: light source forms certain light by one group of pupil lens by the aperture on mask on imaging plane
Learn intensity distribution, wherein optical strength distribution is referred to as light distribution.
In the embodiment of the present application, by multiple light sources, i.e., multiple optical modules constitute the optical system in physical optics model
System.Since optical module group is made of multiple optical modules, correspondingly, the parameter of physical optics model includes each optical mode
The corresponding optical parameter of block, that is to say, that need to obtain the parameter of physical optics model for each optical module.It is each
The corresponding optical parameter of a optical module includes: lighting source parameter, pupil lens parameter and imaging depth parameter.
Lighting source parameter includes light source internal diameter σin, light source outer diameter σout, sector light source angle φ and ψ etc., in conjunction with above-mentioned
Light source schematic diagram shown in Fig. 4 joins light source internal diameter, light source outer diameter and light-source angle correlation in Fig. 4 on different light sources
Number is marked.
Pupil lens parameter includes the difference W (f, g) of lens, Δ z out of focus etc., wherein the difference W (f, g) of lens is usual
It is expressed as Zeinike multinomial.
Imaging depth parameter is a certain imaging depth idepth of optical module on a photoresist.Due on imaging plane
Photoresist is there are certain thickness, subsequent disclosed acquired that resolution chart critical size measures number in the embodiment of the present application
According to being the photoresist imaging depth schematic diagram provided referring to Fig. 6 in the borderline measurement result of photoresist, in Fig. 6, the direction x-y
The plane at place refers to plane locating for imaging depth, and the direction z refers to the direction perpendicular to resolution chart plane, " Measure
Arrow where CD " indicates the measurement result of the critical size at a certain imaging depth.It can be seen from the figure that critical size
There are certain slopes for measurement result in a z-direction.For different resolution charts, slope is significantly different.Therefore, in order to more
Good is fitted measurement data, in the embodiment of the present application, using imaging depth as one of optical parameter of optical module, after
Continuous disclosed critical size emulation data are the calculated result of optical module group a certain imaging depth on a photoresist.
It should be noted that the optical parameter of optical module includes but is not limited to several parameters disclosed above, Ke Yigen
According to the demand of practical application, the increase or deletion of adaptability are carried out to optical parameter.Physical light disclosed in the embodiment of the present application
The parameter for learning model can Unify legislation are as follows:Wherein, i indicates i-th of optical module,
" ... " indicates that optical parameter is not limited to these types.Specifically, the embodiment of the present application is public respectively in conjunction with four kinds of light sources disclosed above
Open the parameter of physical optics model, wherein for annular light source, physical optics model parameter be can be described as:For bipolar light source, optical parameter be can be described as:For
The asymmetric light source of quadrupole, optical parameter can be described as:For four
Pole symmetrical light sources, optical parameter can be described as:
Step S140 calculates the optical module group in photoetching according to the optical module group and the resolution chart
Ideal light distribution on glue, the ideal light distribution includes the ideal light intensity of each described optical module on a photoresist
Distribution.
It is theoretical based on Hopkins diffraction optics according to existing calculating photoetching principle, it can be calculated by following formula
The ideal light distribution of some optical module on a photoresist:
Ii(x, y)=∫ ∫ TCCi(x-x1,y-y1；x-x2,y-y2)M(x1,y1)M*(x2,y2)dx1dx2dy1dy2。
Wherein, Ii(x, y) indicates the ideal light distribution of i-th of optical module on a photoresist, and M () indicates resolution chart
Function, M*() is the conjugate complex number of M (), TCCi() is the corresponding intersection transmission function of i-th of optical module, intersects transmitting letter
Number is the four-dimensional convolution function operation about light source function and pupil function, calculates the optical delivery in lithography model for describing
Property can be expressed by following formula:
TCCi(x1,y1；x2,y2)=s (x1-x2,y1-y2)p(x1,y1)p*(x2,y2)。
Wherein, s () is light source function, and light source function describes the coherence properties of lighting source, and p () is pupil lens letter
Number, p*() is the conjugate complex number of p ().
In the formula of above-mentioned intersection transmission function, light source function is the function in spatial domain, can be by frequency domain
Function carries out inverse Fourier transform and obtains, specific to state are as follows: s (x, y)=F-1[S (f, g)], wherein s (x, y) is in spatial domain
Light source function, F-1[] indicates that inverse Fourier changes, and S (f, g) is the light source function on frequency domain, and (x, y) indicates light source in space
Coordinate position on domain, (f, g) indicate coordinate position of the light source on frequency domain.In the embodiment of the present application, in conjunction with disclosed above
Annular light source, provide the light source function of annular light source:
It should be noted that corresponding to 4 kinds of light sources disclosed above, in the embodiment of the present application, there are four different intersections
Transmission function.
Step S150, the light excited on the photoresist according to the ideal light distribution and the optical module group
Chemical reaction, obtains the parameter of photochemical model.
It for some optical module in physical optics model, is projected on a photoresist, excites photochemical reaction, warp
Baking and development form photoetching offset plate figure.Pass through the chemical reaction on photoresist, the section of the photoetching offset plate figure after simulation development
Figure, referred to as photoresist picture.For optical module when projecting on photoresist, there is diffusion in ideal light distribution, pass through Gauss Laguerre
The convolution of basic function and ideal intensity distribution function, can describe the diffusion term of ideal light distribution, photoresist picture is equivalent to institute
There is the summation of ideal light distribution diffusion term.
The figure formed on photoresist is the coefficient result of multiple optical modules.Therefore, in the embodiment of the present application,
The parameter of the photochemical model includes the photochemical reaction parameter that each described optical module excites on the photoresist.
Wherein, the photochemical reaction parameter that each described optical module excites on the photoresist includes: the optical module
Weight coefficient, the weight coefficient of ideal light distribution diffusion term of the optical module, the standard deviation of Gaussian function and drawing lid
The polynomial order of that.
It should be noted that photochemical reaction parameter includes but is not limited to several parameters disclosed above, it can be according to reality
Needs in the application of border, carry out the increase or deletion of adaptability.Photochemical model parameter can disclosed in the embodiment of the present application
Unify legislation are as follows: { ci,sj,pj,lj..., wherein i indicates that i-th of optical module, j indicate the desired light of i-th of optical module
J-th of diffusion term being distributed by force, ciIndicate the weight coefficient of i-th of optical module, sjIndicate the standard deviation of Gaussian function, pjTable
Show the order of Laguerre polynomials, ljIndicate the weight coefficient of j-th of diffusion term in i-th of optical module ideal light distribution,
" ... " indicates that photochemical reaction parameter is not limited to these types.
Step S160 obtains the photoresist and occurs photochemically reactive threshold condition, and according to the threshold condition with
And the ideal light distribution, simulate the boundary position that the resolution chart is formed on the photoresist.
Threshold condition refers to that the threshold condition of photoresist exposure, that is, light source will be formed required for figure on a photoresist
Least energy density value, threshold condition can obtain according to the characteristic of photoresist in practical application and type.
The threshold condition occurred by obtaining photochemical reaction, can calculate the boundary position formed on photoresist, this
Apply calculating the boundary position by following formula in embodiment, wherein the boundary position is the optical module group
Coordinate set based on the photoresist picture that the resolution chart is formed on the photoresist:
Wherein, i indicates i-th of optical module；ciIndicate the weight coefficient of i-th of optical module；Ri(xk,yk) table
Show based on the resolution chart, the photoresist picture that i-th of optical module is formed on a photoresist；T indicates the photoresist hair
Raw photochemically reactive threshold condition；(xk,yk) indicate to be based on the resolution chart, i-th of optical module is on a photoresist
The coordinate of the photoresist picture of formation, (xk,yk) set of coordinate constitutes the boundary position on photoresist.
Wherein, the resolution chart, the photoresist picture that i-th of optical module is formed on a photoresist are based on are as follows:
Wherein, Ri() indicates that the photoresist picture of i-th of optical module, j indicate the ideal light intensity point of i-th of optical module
J-th of diffusion term of cloth, ljIndicate the weight coefficient of j-th of diffusion term of the ideal light distribution of i-th of optical module,
Ii(x, y) indicates ideal light distribution of i-th of the optical module on the photoresist,Indicate that Gauss draws lid
That basic function, sjIndicate the standard deviation of the Gaussian function, pjIndicate the order of the Laguerre polynomials.
The expression formula of Gauss Laguerre basic function are as follows:
Step S170 obtains the critical size measurement data of the resolution chart, and according to the boundary position, obtains
The critical size of the resolution chart emulates data.
Critical size measurement data refers to resolution chart, is transferred to after crystal column surface, to figure on crystal column surface
Line width measures resulting data.For the critical size measurement data this operation for obtaining resolution chart, in conjunction with Fig. 3 A-3D
Understand, by the arrow where " Measure CD " or " Measure CDs " in figure, illustratively provides each class testing
The position of graphics critical dimension can obtain the critical size measurement data of resolution chart by measuring to critical size.
Boundary position is (xk,yk) set of coordinate passes through the available resolution chart of following formula according to boundary position
Critical size emulate data:
SimulationCD=| xk-xk-1|。
Referring to the schematic diagram of Fig. 7 critical size emulation data provided, curve indicates that photoresist picture, rectangle indicate test in figure
Figure, the arrow where " Simulation CD " indicate that at threshold condition T, the critical size of resolution chart emulates data,
Arrow where " Measure CD " indicates the critical size measurement data of resolution chart.
In one implementation, data are emulated in the critical size measurement data and critical size for obtaining resolution chart
Later, need to calculate the error of fitting between critical size measurement data and critical size emulation data, in the embodiment of the present application,
It is calculated by the following formula error of fitting:
Err=∑ | MeasureCD-SimulationCD|2。
Wherein, err indicates the error of fitting, MeasureCDIndicate the critical size measurement data,
SimulationCDIndicate the critical size emulation data.
After obtaining error of fitting, need to judge whether error of fitting is not more than preset allowable error.In a kind of realization
In mode, workflow schematic diagram shown in Figure 8, after executing the step S170, the embodiment of the present application is disclosed to be calculated
Lithography modeling method further include: step S210, judge the critical size measurement data and the critical size emulation data it
Between error of fitting whether be not more than preset allowable error.If the determination result is YES, S180 is thened follow the steps；If judging result
Be it is no, then follow the steps S211.Wherein, allowable error is preset value, and the size of allowable error is by user according to reality
The demand of application is set, and in the embodiment of the present application, be will allow for error and is set as tol=1e-10, " 1e-10 " is a kind of science
Counting method, size are expressed as ten minus ten power.
Step S180, if the error of fitting between the critical size measurement data and critical size emulation data is not
Greater than preset allowable error, then according to the parameter of the physical optics model and the parameter of the photochemical model, establish
Lithography model is calculated, the calculating lithography model includes physical optics model and photochemical model.
Step S211, if the error of fitting is greater than the preset allowable error and is obtained again according to Newton iteration method
The parameter of the physical optics model and the parameter of the photochemical model are taken, the calculating lithography model is optimized.
Newton iteration method is common parameter optimization method.In the case where error of fitting is greater than preset allowable error,
The variation of physical optics model parameter and photochemical model parameter is instructed using Newton iteration method, is realized to calculating lithography model
Optimal improvements, make the calculating lithography model finally obtained meet technique requirement.
This application discloses a kind of calculating lithography modeling methods, in the method, the figure for including by obtaining resolution chart
The type of shape unit determines optical module group, then according to optical module group, obtains the parameter of physical optics model.Calculate light
The ideal light distribution of module group on a photoresist is learned, and according to ideal light distribution and optical module group in the photoresist
The photochemical reaction of upper excitation obtains the parameter of photochemical model.Then simulation test figure is formed on the photoresist
Boundary position, and the critical size emulation data of the resolution chart are obtained, if critical size measurement data and critical size are imitative
Error of fitting between true data is not more than preset allowable error, then establishes calculating lithography model.Calculating disclosed in the present application
Lithography modeling method is emulated and is intended by establishing different optical modules for graphic element different in resolution chart
It closes, effectively increases the precision for calculating lithography model, in the higher situation of resolution chart complexity, can guarantee to calculate photoetching
The precision of model meets photoetching process requirement.
In order to which the application is explained further, below with reference to embodiment to a kind of calculating lithography modeling method disclosed in the present application
It is illustrated, but they cannot be interpreted as the restriction to the application protection scope.
Workflow schematic diagram shown in Figure 9, the disclosed lithography modeling method that calculates of the embodiment of the present application includes: head
First, resolution chart is read in, by the way that resolution chart is classified, determines optical module group, and obtain the optical parameter of optical module group,
I.e. obtain physical optics model parameter, specifically include obtain the first optical module parameter, obtain the second optical module parameter ...,
And N optical module parameter is obtained, while obtaining the intersection transmission function of respective optical module.Next, binding test is covered
The graph function of template, i.e. resolution chart function calculate the corresponding light distribution of each optical module, specifically include calculating
One light distribution, calculate the second light distribution ... and calculate N light distribution.Then, existed according to each optical module
The photochemical reaction excited on photoresist determines the corresponding photochemical reaction parameter of each optical module, i.e. acquisition photochemistry
Model parameter, specifically include obtain the first photochemical reaction parameter, obtain the second photochemical reaction parameter ... and obtain N
Photochemical reaction parameter.Then, the photoresist picture formed on a photoresist by calculating each optical module, simulation test figure
The boundary position formed on a photoresist.Then, it according to boundary position, obtains critical size and emulates data, and calculate crucial ruler
Error of fitting between very little measurement data and critical size emulation data.Finally, pre- by judging whether error of fitting is not more than
If allowable error, to determine whether to calculate lithography model optimize.Wherein, if error of fitting is not more than allowable error,
Then indicate that current calculating lithography model precision is met the requirements, can by acquired before physical optics model parameter and
Photochemical model parameter is determined as calculating lithography model parameter, establishes calculate lithography model according to this；Allow if error of fitting is greater than
Error, then it represents that current calculating lithography model precision is unsatisfactory for requiring, and calculates lithography model parameter at this time, it may be necessary to optimize, presses
According to Newton iteration method, physical optics model parameter and photochemical model parameter are reacquired.
The disclosed lithography modeling method that calculates of the embodiment of the present application will be surveyed for graphic element different in resolution chart
Attempt shape to classify, by establishing different optical modules, resolution chart is emulated and is fitted, calculating is effectively increased
The precision of lithography model.It is shown in Figure 10,1 light source (one source), 2 light source (two are directed in figure respectively
Sources), the optical module group that 3 light sources (three sources) and 4 light sources (four sources) are constituted, discloses
The difference of the finally formed photoresist picture of resolution chart, it can be seen from the figure that the optical module group that multiple light sources are constituted calculates institute
The error of the photoresist picture obtained, hence it is evident that be less than single source and calculate resulting photoresist as error.Those skilled in the art, according to upper
State embodiment disclosure, it is easy to verify the beneficial effect of the application.
Following is the application Installation practice, can be used for executing the application embodiment of the method.It is real for the application device
Undisclosed details in example is applied, the application embodiment of the method is please referred to.
The application second embodiment discloses a kind of calculating lithography modeling device, structural schematic diagram shown in Figure 11,
The device includes:
Figure obtains module 10, for obtaining the type for the graphic element that resolution chart includes, wherein the resolution chart
Refer to the mask graph for test.
Optical module group determining module 20 determines optical module group for the type according to the graphic element, wherein
The optical module group is made of multiple optical modules.
Physical optics model parameter obtains module 30, for obtaining physical optics model according to the optical module group
Parameter.
Ideal light intensity computing module 40, for calculating the light according to the optical module group and the resolution chart
The ideal light distribution of module group on a photoresist is learned, the ideal light distribution includes each described optical module in photoetching
Ideal light distribution on glue.
Photochemical model parameter acquisition module 50, for being existed according to the ideal light distribution and the optical module group
The photochemical reaction excited on the photoresist obtains the parameter of photochemical model.
For obtaining the photoresist photochemically reactive threshold condition occurs for analog module 60, and according to the threshold value
Condition and the ideal light distribution, simulate the boundary position that the resolution chart is formed on the photoresist.
Data acquisition module 70, for obtaining the critical size measurement data of the resolution chart, and according to the side
Boundary position obtains the critical size emulation data of the resolution chart.
Model building module 80, between the critical size measurement data and critical size emulation data
When error of fitting is not more than preset allowable error, according to the parameter of the physical optics model and the photochemical model
Parameter is established and calculates lithography model, and the calculating lithography model includes physical optics model and photochemical model.
Further, described device further include:
Optimization module is used for when the error of fitting is greater than the preset allowable error, according to Newton iteration method, weight
The parameter of the physical optics model and the parameter of the photochemical model are newly obtained, the calculating lithography model is carried out excellent
Change.
Further, the optical module group determining module includes:
Resolution chart taxon classifies the resolution chart for the type according to the graphic element.
Specific gravity acquiring unit, for obtaining each class testing figure specific gravity shared in the resolution chart.
Optical module determination unit, for determining the corresponding optical module of each class testing figure.
Weight coefficient determination unit, for the ratio shared in the resolution chart according to each class testing figure
Weight, determines the weight coefficient of the corresponding optical module of each class testing figure.
Optical module group determination unit, for by the corresponding optical module of each class testing figure, according to respective
Weight coefficient is combined, and determines the optical module group.
Further, the parameter of the physical optics model includes the corresponding optical parameter of each described optical module.
Wherein, the corresponding optical parameter of each described optical module include: lighting source parameter, pupil lens parameter with
And imaging depth parameter.
Further, the parameter of the photochemical model includes that each described optical module excites on the photoresist
Photochemical reaction parameter.
Wherein, the photochemical reaction parameter that each described optical module excites on the photoresist includes: the light
Learn the standard deviation of the weight coefficient of module, the weight coefficient of the ideal light distribution diffusion term of the optical module, Gaussian function
And the order of Laguerre polynomials.
Further, the analog module is also used to be calculated by the following formula the boundary position, the boundary position
For the coordinate set for the photoresist picture that the optical module group is formed on the photoresist based on the resolution chart:
Wherein, i indicates i-th of optical module；ciIndicate the weight coefficient of i-th of optical module；Ri(xk,yk) table
Show based on the resolution chart, the photoresist picture that i-th of optical module is formed on a photoresist；(xk,yk) indicate based on described
Resolution chart, the coordinate for the photoresist picture that i-th of optical module is formed on a photoresist；T indicates that light occurs for the photoresist
The threshold condition of chemical reaction.
Further, the resolution chart, the photoresist picture that i-th of optical module is formed on a photoresist are based on are as follows:
Wherein, j indicates j-th of diffusion term of the ideal light distribution of i-th of optical module, ljIndicate described i-th
The weight coefficient of j-th of diffusion term of the ideal light distribution of a optical module, Ii(x, y) indicates i-th of optical module
Ideal light distribution on the photoresist,Indicate Gauss Laguerre basic function, SjIndicate the Gaussian function
Standard deviation, PjIndicate the order of the Laguerre polynomials.
Further, the error of fitting are as follows:
Err=∑ | MeasureCD-SimulationCD|2。
Wherein, err indicates the error of fitting, MeasureCDIndicate the critical size measurement data,
SimulationCDIndicate the critical size emulation data.
In the specific implementation, the application also provides a kind of computer storage medium, wherein the computer storage medium can store
There is program, which may include step some or all of in each embodiment provided by the present application when executing.The storage medium
It can be magnetic disk, CD, read-only memory (read-only memory, abbreviation ROM) or random access memory (random
Access memory, abbreviation RAM) etc..
In addition, the embodiment of the present application also provides a kind of computer program product comprising instruction, when its on computers
When operation, so that the computer some or all of executes in above-described embodiment the method step.
In the above-described embodiments, can come wholly or partly by software, hardware, firmware or any combination thereof real
It is existing.When implemented in software, it can entirely or partly be realized in the form of computer product.The computer program product
Including one or more computer instructions.It is all or part of when loading on computers and executing the computer program instructions
Ground is generated according to process or function described in the embodiment of the present application.The computer can be general purpose computer, special purpose computer,
Computer network or other programmable devices.The computer instruction may be stored in a computer readable storage medium, or
Person is transmitted from a computer readable storage medium to another computer readable storage medium, for example, the computer instruction
Can from a web-site, computer, server or data center by wired or wireless way to another web-site,
Computer, server or data center are transmitted.The computer readable storage medium can be what computer can access
Any usable medium either includes the data storage devices such as one or more usable mediums integrated server, data center.
The usable medium can be magnetic medium, (for example, floppy disk, hard disk, tape), optical medium (for example, DVD) or semiconductor
Medium (such as solid state hard disk) etc..
Combine detailed description and exemplary example that the application is described in detail above, but these explanations are simultaneously
It should not be understood as the limitation to the application.It will be appreciated by those skilled in the art that without departing from the application spirit and scope,
A variety of equivalent substitution, modification or improvements can be carried out to technical scheme and embodiments thereof, these each fall within the application
In the range of.The protection scope of the application is determined by the appended claims.
Claims (10)
1. a kind of calculating lithography modeling method, which is characterized in that the described method includes:
Obtain the type for the graphic element that resolution chart includes, wherein the resolution chart refers to the mask layout for test
Shape；
According to the type of the graphic element, optical module group is determined, wherein the optical module group is by multiple optical module groups
At；
According to the optical module group, the parameter of physical optics model is obtained；
According to the optical module group and the resolution chart, the ideal light intensity of the optical module group on a photoresist is calculated
Distribution, the ideal light distribution includes ideal light distribution of each described optical module on the photoresist；
According to the photochemical reaction that the ideal light distribution and the optical module group excite on the photoresist, obtain
The parameter of photochemical model；
It obtains the photoresist and photochemically reactive threshold condition occurs, and according to the threshold condition and the ideal light intensity
Distribution, simulates the boundary position that the resolution chart is formed on the photoresist；
The critical size measurement data of the resolution chart is obtained, and according to the boundary position, obtains the resolution chart
Critical size emulate data；
If the error of fitting between the critical size measurement data and critical size emulation data is not more than preset appearance
Perhaps error is established then according to the parameter of the physical optics model and the parameter of the photochemical model and calculates lithography model,
The calculating lithography model includes physical optics model and photochemical model.
2. the method according to claim 1, wherein if the error of fitting is greater than and described preset allows to miss
Difference reacquires the parameter of the physical optics model and the parameter of the photochemical model then according to Newton iteration method, right
The calculating lithography model optimizes.
3. the method according to claim 1, wherein the type according to the graphic element, determines optics
Module group, comprising:
According to the type of the graphic element, the resolution chart is classified；
Obtain each class testing figure specific gravity shared in the resolution chart；
Determine the corresponding optical module of each class testing figure；
According to each class testing figure specific gravity shared in the resolution chart, each class testing figure pair is determined
The weight coefficient for the optical module answered；
By the corresponding optical module of each class testing figure, it is combined according to respective weight coefficient, determines the light
Learn module group.
4. the method according to claim 1, wherein the parameter of the physical optics model includes described in each
The corresponding optical parameter of optical module；
Wherein, the corresponding optical parameter of each described optical module include: lighting source parameter, pupil lens parameter and at
As depth parameter.
5. according to the method described in claim 3, it is characterized in that, the parameter of the photochemical model includes each described light
Learn the photochemical reaction parameter that module excites on the photoresist；
Wherein, the photochemical reaction parameter that each described optical module excites on the photoresist includes: the optical mode
The weight coefficient of block, the weight coefficient of ideal light distribution diffusion term of the optical module, the standard deviation of Gaussian function and
The order of Laguerre polynomials.
6. according to the method described in claim 5, it is characterized in that,
It is calculated by the following formula the boundary position, the boundary position is that the optical module group is based on the resolution chart
The coordinate set of the photoresist picture formed on the photoresist:
Wherein, i indicates i-th of optical module；ciIndicate the weight coefficient of i-th of optical module；Ri(xk,yk) indicate to be based on
The resolution chart, the photoresist picture that i-th of optical module is formed on the photoresist；(xk,yk) indicate to be based on the survey
Attempt shape, the coordinate for the photoresist picture that i-th of optical module is formed on the photoresist；T indicates that the photoresist occurs
Photochemically reactive threshold condition.
7. according to the method described in claim 6, it is characterized in that,
Based on the resolution chart, photoresist picture that i-th of optical module is formed on a photoresist are as follows:
Wherein, j indicates j-th of diffusion term of the ideal light distribution of i-th of optical module, ljIndicate i-th of the optics
The weight coefficient of j-th of diffusion term of the ideal light distribution of module, Ii(x, y) indicates i-th of optical module described
Ideal light distribution on photoresist,Indicate Gauss Laguerre basic function, sjIndicate the standard of the Gaussian function
Difference, pjIndicate the order of the Laguerre polynomials.
8. the method according to claim 1, wherein
The error of fitting are as follows:
Err=∑ | MeasureCD-SimulationCD|2；
Wherein, err indicates the error of fitting, MeasureCDIndicate the critical size measurement data, SimulationCDIt indicates
The critical size emulates data.
9. a kind of calculating lithography modeling device, which is characterized in that described device includes:
Figure obtains module, for obtaining the type for the graphic element that resolution chart includes, wherein the resolution chart refers to use
In the mask graph of test；
Optical module group determining module determines optical module group for the type according to the graphic element, wherein the light
Module group is learned to be made of multiple optical modules；
Physical optics model parameter obtains module, for obtaining the parameter of physical optics model according to the optical module group；
Ideal light intensity computing module, for calculating the optical module according to the optical module group and the resolution chart
The ideal light distribution of group on a photoresist, the ideal light distribution includes each described optical module in the photoresist
On ideal light distribution；
Photochemical model parameter acquisition module is used for according to the ideal light distribution and the optical module group in the light
The photochemical reaction excited in photoresist obtains the parameter of photochemical model；
For obtaining the photoresist photochemically reactive threshold condition occurs for analog module, and according to the threshold condition with
And the ideal light distribution, simulate the boundary position that the resolution chart is formed on the photoresist；
Data acquisition module, for obtaining the critical size measurement data of the resolution chart, and according to the boundary position,
Obtain the critical size emulation data of the resolution chart；
Model building module is missed for the fitting between the critical size measurement data and critical size emulation data
When difference is not more than preset allowable error, according to the parameter of the physical optics model and the parameter of the photochemical model,
It establishes and calculates lithography model, the calculating lithography model includes physical optics model and photochemical model.
10. device according to claim 9, which is characterized in that described device further include:
Optimization module, for according to Newton iteration method, obtaining again when the error of fitting is greater than the preset allowable error
The parameter of the physical optics model and the parameter of the photochemical model are taken, the calculating lithography model is optimized.
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