CN118169973A - Method, device, electronic equipment and storage medium for processing diffraction effect - Google Patents
Method, device, electronic equipment and storage medium for processing diffraction effect Download PDFInfo
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Abstract
The application provides a method, a device, electronic equipment and a storage medium for processing diffraction effect, wherein the method comprises the following steps: acquiring preset complex light field distribution of a target mask surface, coordinates of the target mask surface and coordinates of a photoresist surface with a vertical optical axis, which are obtained after the target mask surface is irradiated; obtaining the current light intensity distribution of the light resistance surface according to the coordinates of the target mask surface, the coordinates of the light resistance surface, preset complex light field distribution and an objective function, wherein the objective function is used for obtaining the light field distribution of an output image corresponding to an input light beam; determining a constraint condition of light intensity distribution according to the position information of the coordinates of the light resistance surface falling on a plurality of areas and the current light intensity distribution, wherein the areas are generated by diffraction effect; and adjusting the size parameters of the plurality of mask holes in the target mask surface according to the constraint conditions. The application solves the problem that the related technology does not provide an effective treatment method for the diffraction effect of the video field diaphragm.
Description
Technical Field
The present application relates to the field of holographic lithography, and in particular, to a method, an apparatus, an electronic device, and a storage medium for processing diffraction effects.
Background
With the ever smaller feature sizes of integrated circuit fabrication, the technical challenges faced by conventional projection lithography are also increasing. Holographic lithography is a novel lithography system based on holographic masks, has the advantages of relatively light path design and relatively simple manufacturing links, and has wide development prospect.
After the mask is irradiated by the detection light, the detection light is diffracted and continuously propagates to the image surface, and at a certain image distance, a light resistance is used for receiving the diffracted light field, so that the exposure process in the photoetching process is completed. In the reconstruction process, all exposure and development will be propagated backward together to reach the image surface after the irradiation of the detection light, which brings a lot of interference to the exposure and development.
To reduce the effects of twin images and stray light, a field stop needs to be added over the exposure area. However, this inevitably introduces diffraction effects of light passing through the diaphragm, eventually forming an aperture at the desired pattern boundary on the resist imaging interface, affecting the manufacturing accuracy. There is no effective treatment method for diffraction effect of the field diaphragm in the prior art.
Disclosure of Invention
The application provides a method, a device, electronic equipment and a storage medium for processing diffraction effects, which at least solve the problem that the related technology does not provide an effective processing method for diffraction effects of a video field diaphragm.
According to an aspect of an embodiment of the present application, there is provided a method of processing diffraction effects, the method comprising:
acquiring preset complex light field distribution of a target mask surface, coordinates of the target mask surface and coordinates of a photoresist surface with a vertical optical axis, which are obtained after the target mask surface is irradiated;
Obtaining the current light intensity distribution of the light resistance surface according to the coordinates of the target mask surface, the coordinates of the light resistance surface, the preset complex light field distribution and an objective function, wherein the objective function is used for obtaining the light field distribution of an output image corresponding to an input light beam, and the output image is an imaging image of the light beam passing through the target mask surface and showing on the surface of a silicon wafer;
Determining a constraint condition of light intensity distribution according to the position information of the coordinates of the light resistance surface falling on a plurality of areas and the current light intensity distribution, wherein the areas are generated by diffraction effect;
and adjusting the size parameters of a plurality of mask holes in the target mask surface according to the constraint conditions.
According to another aspect of an embodiment of the present application, there is also provided an apparatus for processing diffraction effects, the apparatus including:
The first acquisition module is used for acquiring preset complex light field distribution of a target mask surface, coordinates of the target mask surface and coordinates of a light resistance surface of a vertical optical axis, which are obtained after the target mask surface is irradiated;
The first obtaining module is used for obtaining the current light intensity distribution of the light resistance surface according to the coordinates of the target mask surface, the coordinates of the light resistance surface, the preset complex light field distribution and an objective function, wherein the objective function is used for obtaining the light field distribution of an output image corresponding to an input light beam, and the output image is an imaging image of the light beam which passes through the target mask surface and is displayed on the surface of the silicon wafer;
A determining module, configured to determine a constraint condition of light intensity distribution according to position information of the coordinates of the photoresist surface falling on a plurality of areas and the current light intensity distribution, where the areas are generated by diffraction effects;
and the first adjusting module is used for adjusting the size parameters of the plurality of mask holes in the target mask surface according to the constraint conditions.
Optionally, the determining module includes:
A determining unit for determining that coordinates of the photoresist surface fall on a first area of wafer exposure or a second area of aperture, wherein the first area and the second area are both generated by diffraction effect;
a first setting unit, configured to take an error value between the current light intensity distribution and an actual light intensity distribution as a first constraint condition when a first number of coordinates of the photoresist surface falls in the first area; or alternatively
And a second setting unit configured to set 0 as a second constraint condition for the current light intensity distribution in a case where a second number of coordinates of the light-blocking surface falls in the second region.
Optionally, the first adjustment module includes:
The solving unit is used for solving an optimal solution by combining the first constraint condition with a target optimization algorithm, wherein the optimal solution corresponds to the size parameter of the mask hole, so that the mask generates light intensity conforming to the first constraint condition based on the size parameter; or alternatively
And the third setting unit is used for adjusting the size parameter of the mask hole based on the second constraint condition so that the light intensity corresponding to the coordinate of the light resistance surface is 0.
Optionally, the first obtaining module includes:
The first obtaining unit is used for obtaining the light field distribution of the light resistance surface according to the coordinates of the target mask surface, the coordinates of the light resistance surface, the preset complex light field distribution and an objective function;
And the second obtaining unit is used for obtaining the current light intensity distribution according to the light field distribution of the light resistance surface.
Optionally, the apparatus further comprises:
the first comparison module is used for comparing the current light intensity distribution with the actual light intensity distribution after the current light intensity distribution is obtained according to the light field distribution of the light resistance surface;
The second adjusting module is used for not adjusting the preset complex light field distribution and taking the preset complex light field distribution as a target complex light field distribution under the condition that the error value between the current light intensity distribution and the actual light intensity distribution is smaller than or equal to a preset threshold value; under the condition that the error value between the current light intensity distribution and the actual light intensity distribution is larger than the preset threshold value, adjusting the preset complex light field distribution until the error value between the current light intensity distribution and the actual light intensity distribution is smaller than or equal to the preset threshold value, and obtaining the target complex light field distribution;
And the second obtaining module is used for obtaining the light field distribution of the photoresist surface of the next iteration by using the target complex light field distribution, the coordinates of the target mask surface, the coordinates of the photoresist surface and the objective function.
Optionally, the apparatus further comprises:
a second obtaining module, configured to obtain a width of an aperture generated by a diffraction effect before determining a constraint condition of light intensity distribution according to the position information of the light resistance surface where the coordinates fall in a plurality of areas and the current light intensity distribution;
the second comparison module is used for comparing the width with a preset display resolution size;
And the third acquisition module is used for acquiring the position information of the photoresist surface, in which the coordinates fall in a plurality of areas, under the condition that the width is larger than the preset development resolution size.
Optionally, the apparatus further comprises:
The setting module is used for setting the light intensity values corresponding to all the coordinates in the second area of the photoresist surface based on each second constraint condition after the optimal solution is solved according to each first constraint condition of all the coordinates in the first area of the photoresist surface.
According to still another aspect of the embodiments of the present application, there is provided an electronic device including a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory complete communication with each other through the communication bus; wherein the memory is used for storing a computer program; a processor for performing the method steps of any of the embodiments described above by running the computer program stored on the memory.
According to a further aspect of the embodiments of the present application there is also provided a computer readable storage medium having stored therein a computer program, wherein the computer program is arranged to perform the method steps of any of the embodiments described above when run.
In the embodiment of the application, the preset complex light field distribution of the target mask surface, the coordinates of the target mask surface and the coordinates of the photoresist surface of the vertical optical axis obtained after the target mask surface is irradiated are obtained; obtaining the current light intensity distribution of the light resistance surface according to the coordinates of the target mask surface, the coordinates of the light resistance surface, preset complex light field distribution and an objective function, wherein the objective function is used for obtaining the light field distribution of an output image corresponding to an input light beam; determining a constraint condition of light intensity distribution according to the position information of the coordinates of the light resistance surface falling on a plurality of areas and the current light intensity distribution, wherein the areas are generated by diffraction effect; and adjusting the size parameters of the plurality of mask holes in the target mask surface according to the constraint conditions. According to the embodiment of the application, after the current light intensity distribution of the light resistance surface is obtained according to the coordinates of the target mask surface, the coordinates of the light resistance surface, the preset complex light field distribution and the objective function, the constraint condition of the light intensity distribution is set based on the coordinate position and the current light intensity distribution of the light resistance surface, so that the light intensity distribution interval required to be solved on the light resistance surface is expanded, the size parameters of a plurality of mask holes in the target mask surface can be adjusted according to the constraint condition, the diffraction effect caused by introducing a field diaphragm in holographic lithography is eliminated, the manufacturing precision and quality of an integrated circuit are improved, and the problem that an effective treatment method for the diffraction effect of the field diaphragm is not proposed in the related art is solved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application.
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below.
FIG. 1 is a schematic illustration of an exposure process in an alternative holographic lithography completion lithography process according to an embodiment of the present application;
FIG. 2 is a flow chart of an alternative method of treating diffraction effects in accordance with an embodiment of the present application;
FIG. 3 is a block diagram of an alternative apparatus for processing diffraction effects in accordance with an embodiment of the present application;
Fig. 4 is a block diagram of an alternative electronic device in accordance with an embodiment of the present application.
Detailed Description
In order that those skilled in the art will better understand the present application, a technical solution in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, shall fall within the scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the application described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
With the ever smaller feature sizes of integrated circuit fabrication, the technical challenges faced by conventional projection lithography are also increasing. Holographic lithography is a novel lithography system based on holographic masks, has the advantages of relatively light path design and relatively simple manufacturing links, and has wide development prospect.
As shown in fig. 1, after a probe beam (corresponding to an input light field) irradiates the mask, the probe beam diffracts and continues to propagate toward the image plane, and at a certain image distance, a photoresist formed by a photoresist coated on the wafer is used to receive the diffracted light field, so as to complete the exposure process in the photolithography process.
In a holographic lithography system, by the principle of holographic interference patterns (Holographic Interferogram),
I(x，y)＝|R(x，y)+O(x，y)|2
＝|R(x，y)|2+|O(x,y)|2+R*(x,y)O(x,y)+R(x,y)O(x,y)*，
Where I is the light intensity distribution on the holographic mask, R is the distribution of the complex reference light, O is the light distribution of the complex recorded object, it is seen that the holographic mask will necessarily contain a direct current term, a halo, a twin image conjugated to the desired pattern, only the rightmost term of the second row of the above formula being the desired image. During reconstruction, all of these images will propagate back together to the image plane after the probe light irradiation, which brings a lot of interference to the exposure development.
To reduce the effects of twin images and stray light, as in fig. 1, a field stop needs to be added over the exposure area. However, this inevitably introduces diffraction effects of light passing through the diaphragm, eventually forming an aperture at the desired pattern boundary on the resist imaging interface, affecting the manufacturing accuracy. There is currently no effective way to deal with the diffraction effects of field stops.
In order to solve the above-mentioned problems, an embodiment of the present application provides a method for processing diffraction effects, as shown in fig. 2, the method can be applied to an electronic device with data independent processing capability, such as a computer terminal, and the method includes:
Step S201, obtaining preset complex light field distribution of a target mask surface, coordinates of the target mask surface and coordinates of a photoresist surface with a vertical optical axis, which are obtained after the target mask surface is irradiated;
step S202, obtaining the current light intensity distribution of a light resistance surface according to the coordinates of the target mask surface, the coordinates of the light resistance surface, preset complex light field distribution and an objective function, wherein the objective function is used for obtaining the light field distribution of an output image corresponding to an input light beam, and the output image is an imaging image of the light beam which passes through the target mask surface and is displayed on the surface of a silicon wafer;
step S203, determining the constraint condition of light intensity distribution according to the position information of the coordinates of the photoresist surface falling on a plurality of areas and the current light intensity distribution, wherein the areas are generated by diffraction effect;
Step S204, the size parameters of the plurality of mask holes in the target mask surface are adjusted according to the constraint conditions.
Optionally, when the probe beam irradiates a target mask surface, a predetermined preset complex light field distribution is generated, and as can be derived from fig. 1, when a point on the wafer, for example, the lower left corner, is taken as the origin of coordinates, a coordinate axis is generated based on the origin of coordinates, so as to obtain the coordinates of the target mask surface and the coordinates of the photoresist surface with the vertical optical axis obtained after the irradiation of the target mask surface.
Described by D with a preset complex light field distribution on the target mask face, which back-propagation can be calculated with double convolution integral using scalar diffraction theory, see formula (1) below:
Where h is an objective function, such as a point spread function, x, y are coordinates of the target mask plane, x ', y' are coordinates of the subsequent photoresist plane perpendicular to the optical axis, h depends on the currently used model, z is a z-axis coordinate value, and is a constant.
After the formula (1) and the determined D, obtaining the light field distribution R (x ', y'; z) simulating the light field distribution of the light resistance surface, and obtaining the current light intensity distribution of the light resistance surface by using the formula (2): the intensity is the square of the modulus of the amplitude of the light field.
Isimulated(x',y';zresist)＝|R(x',y';z)|2 (2)
Then, position information corresponding to the coordinates of the light resistance surface is obtained, which part of the area generated by the diffraction effect is located, then, according to the position information and the current light intensity distribution, constraint conditions of the light intensity distribution are obtained, and then, the size of the mask hole is adjusted on the target mask surface based on the constraint conditions, so that the aperture is eliminated.
In the embodiment of the application, the preset complex light field distribution of the target mask surface, the coordinates of the target mask surface and the coordinates of the photoresist surface of the vertical optical axis obtained after the target mask surface is irradiated are obtained; obtaining the current light intensity distribution of the light resistance surface according to the coordinates of the target mask surface, the coordinates of the light resistance surface, preset complex light field distribution and an objective function, wherein the objective function is used for obtaining the light field distribution of an output image corresponding to an input light beam; determining a constraint condition of light intensity distribution according to the position information of the coordinates of the light resistance surface falling on a plurality of areas and the current light intensity distribution, wherein the areas are generated by diffraction effect; and adjusting the size parameters of the plurality of mask holes in the target mask surface according to the constraint conditions. According to the embodiment of the application, after the current light intensity distribution of the light resistance surface is obtained according to the coordinates of the target mask surface, the coordinates of the light resistance surface, the preset complex light field distribution and the objective function, the constraint condition of the light intensity distribution is set based on the coordinate position and the current light intensity distribution of the light resistance surface, so that the light intensity distribution interval required to be solved on the light resistance surface is expanded, the size parameters of a plurality of mask holes in the target mask surface can be adjusted according to the constraint condition, the diffraction effect caused by introducing a field diaphragm in holographic lithography is eliminated, the manufacturing precision and quality of an integrated circuit are improved, and the problem that an effective treatment method for the diffraction effect of the field diaphragm is not proposed in the related art is solved.
As an alternative embodiment, determining a constraint condition of light intensity distribution according to position information of coordinates of a light-blocking surface falling on a plurality of areas and current light intensity distribution includes:
determining that the coordinates of the photoresist surface fall on a first area of wafer exposure or a second area of aperture, wherein both the first area and the second area are generated by diffraction effect;
under the condition that a first number of coordinates of the light resistance surface fall in a first area, taking an error value between the current light intensity distribution and the actual light intensity distribution as a first constraint condition, wherein the error value is smaller than or equal to a preset threshold value; or alternatively
In the case where the second number of coordinates of the light-blocking surface falls in the second region, the current light intensity distribution is set to 0 as the second constraint condition.
Alternatively, in an embodiment of the present application, the area generated by the diffraction effect is divided into a first area of wafer exposure, denoted as S; or a second area generated by the aperture (i.e. a halo area represented by the light intensity outside the exposed area of the silicon wafer pattern is not 0), and is marked as delta, so that after a certain number of coordinates of the light resistance surface fall in which area, a constraint condition is determined according to the determined area, for example, when a first number of coordinates (such as 100 coordinates) of the light resistance surface fall in the first area, an error value between the current light intensity distribution (i.e. I simulated) and the actual light intensity distribution (i.e. I desired) is less than or equal to a preset threshold (the preset threshold is actually a critical value for error value judgment, such as 0.01), and I simulated can be regarded as being approximately equal to I desired; or in the case where a second number of coordinates (e.g., 30 coordinates) of the light-blocking surface falls in the second region, the current light intensity distribution is set to 0 as a second constraint. The first constraint and the second constraint are as described above with reference to formula (3):
it should be explained that each coordinate in the first area corresponds to a first constraint, and each coordinate in the second area corresponds to a second constraint.
In the embodiment of the application, compared with the general constraint of the holographic photoetching light resistance surface, the constraint that the light intensity of the aperture interval is zero is increased, and then the aperture is eliminated.
As an alternative embodiment, adjusting the size parameters of the plurality of mask apertures in the target mask surface according to the constraint conditions includes:
Solving an optimal solution by combining the first constraint condition with a target optimization algorithm, wherein the optimal solution corresponds to the size parameter of the mask hole, so that the mask generates light intensity conforming to the first constraint condition based on the size parameter; or alternatively
And adjusting the size parameter of the mask hole based on the second constraint condition so that the light intensity corresponding to the coordinates of the light resistance surface is 0.
Alternatively, if the photoresist surface coordinates fall within the first region, then specific optimization requires adjustment of the mask, which is typically made up of billions of holes, with each hole having a size parameter, such as length and width, of about billions in total, such that the simulated light intensity generated by the adjusted mask satisfies the first constraint. Combining the first constraint condition with a target optimization algorithm (such as a solution space searching method of a genetic algorithm, an ant colony algorithm, simulated annealing and the like or a Newton method based on an analytic solution), solving an optimal solution by an optimization problem, namely, continuously performing problem optimization adjustment on the target optimization algorithm under the condition that a plurality of solutions exist, so that a unique solution can be obtained from the plurality of solutions as the optimal solution, wherein the optimal solution is the size parameter to be adjusted by the current mask hole, and the mask generates light intensity conforming to the first constraint condition based on the size parameter;
or the light intensity of the aperture is erased in an erasing way, in this case, in the aperture area delta, the constraint that the aperture is 0 is not considered in the traditional optimization, and in this case, representative points with certain intervals (corresponding to the coordinates of the photoresist surface) are selected, and the light intensity of the representative points is considered, so that the light intensity at the representative points is zero. Therefore, the mode of adjusting the size information of the mask hole is adopted, and finally, the light intensity corresponding to the coordinates of the light resistance surface can be 0, so that the aperture can be eliminated.
In the embodiment of the application, the optimal solution calculation scheme in the optimization of the exposure area is provided, and the optimization scheme of the aperture area is also provided.
As an alternative embodiment, after obtaining the current light intensity distribution from the light field distribution of the light-blocking surface, the method comprises:
Comparing the current light intensity distribution with the actual light intensity distribution;
Under the condition that the error value between the current light intensity distribution and the actual light intensity distribution is smaller than or equal to a preset threshold value, the preset complex light field distribution is not regulated any more, and the preset complex light field distribution is used as a target complex light field distribution; under the condition that the error value between the current light intensity distribution and the actual light intensity distribution is larger than a preset threshold value, adjusting the preset complex light field distribution until the error value between the current light intensity distribution and the actual light intensity distribution is smaller than or equal to the preset threshold value, and obtaining target complex light field distribution;
And obtaining the light field distribution of the photoresist surface of the next iteration by utilizing the target complex light field distribution, the coordinates of the target mask surface, the coordinates of the photoresist surface and the objective function.
Alternatively, after the formula (2), the current light intensity distribution is obtained, and in the case where the current wafer exposure area is denoted as S, since the aperture area is an area that needs to be eliminated, only the desired projection area, that is, the S area, needs to be concerned, which requires that the light intensity distribution simulated in the S area be close to the desired actual light intensity distribution.
At this time, the current light intensity distribution I simulated is compared with the actual light intensity distribution I desired, and in the case where the error value between the current light intensity distribution and the actual light intensity distribution is equal to or smaller than the preset threshold value, as in formula (4):
Isimulated(x′,y′;zresist)≈Idesired(x′,y′;zresist)，when point(x′，y′)lies in S (4)
at this time, the preset complex light field distribution is not regulated any more, and the preset complex light field distribution is used as the target complex light field distribution; and if the error value between the current light intensity distribution and the actual light intensity distribution is larger than the preset threshold value, adjusting the preset complex light field distribution until the error value between the current light intensity distribution and the actual light intensity distribution is smaller than or equal to the preset threshold value, and obtaining the target complex light field distribution.
And then substituting the target complex light field distribution D obtained without adjusting the preset complex light field distribution or the target complex light field distribution D obtained after the adjustment into the formula (1) for calculation to obtain the light field distribution R (x ', y'; z) of the light resistance surface.
In the embodiment of the application, the preset complex light field distribution D is continuously optimized and adjusted, so that the obtained simulated light intensity distribution in the S domain is closest to the required light intensity distribution.
As an alternative embodiment, before the position information falling on the plurality of areas according to the coordinates of the photoresist surface, the method further includes:
acquiring the width of an aperture generated by diffraction effects;
Comparing the width with a preset display resolution size;
And under the condition that the width is larger than the preset development resolution, acquiring position information of the coordinate of the photoresist surface falling on a plurality of areas.
Alternatively, the range of diffraction effects caused by the diaphragm, i.e. the width delta of the aperture delta, is calculated based on the existing mask and diffraction model, which diffraction effects are considered negligible if delta is of the same order as or smaller than the preset imaging resolution size. It should be noted that the preset display resolution size may be resolution size information acquired in real time, and the necessity of considering the diffraction effect is determined according to the size comparison between the aperture δ and the resolution size at the current display. If delta does not satisfy the above condition, i.e., delta is larger than a preset display resolution size, in order to eliminate diffraction effects of the diaphragm, first, positional information of the coordinates of the photoresist surface falling on a plurality of areas is acquired, and then, a subsequent operation is performed.
In the embodiment of the application, whether the aperture needs to be eliminated is determined according to the comparison result of the width of the aperture generated by the diffraction effect and the preset display resolution size, so that certain resources are saved.
As an alternative embodiment, the method further comprises:
After solving the optimal solution according to each first constraint condition of all coordinates in the first area of the photoresist surface, setting the light intensity values corresponding to all coordinates in the second area of the photoresist surface based on each second constraint condition.
Alternatively, the disclosed embodiments propose an optimized sequencing for the exposure area S (i.e., the first area) and the aperture area (i.e., the second area Δ): for example, the diffraction aperture caused by the field stop can be post-processed in the iterative optimization, i.e. the optimization of the exposure field S is pre-processed, and the optimization of the post-processing aperture area Δ is terminated. Examples: and when optimization iteration is performed, first applying a first constraint condition corresponding to each coordinate point in the first region to obtain a first-stage optimal solution, and then applying a second constraint condition corresponding to each coordinate point in the second region, so that the optimization is further performed on the basis of the first-stage optimal solution to obtain light intensity values corresponding to all coordinates in the second region of the photoresist surface, wherein the light intensity values are 0.
In the embodiment of the application, the order of optimization for the exposure area and aperture area is designed, and the batch process is more efficient than performing a solution space search with all constraints for each round.
It should be noted that, for simplicity of description, the foregoing method embodiments are all described as a series of acts, but it should be understood by those skilled in the art that the present application is not limited by the order of acts described, as some steps may be performed in other orders or concurrently in accordance with the present application. Further, those skilled in the art will also appreciate that the embodiments described in the specification are all preferred embodiments, and that the acts and modules referred to are not necessarily required for the present application.
According to another aspect of the embodiment of the present application, there is also provided an apparatus for processing a diffraction effect for implementing the above method for processing a diffraction effect. FIG. 3 is a block diagram of an alternative apparatus for processing diffraction effects in accordance with an embodiment of the present application, as shown in FIG. 3, which may include:
The first obtaining module 301 is configured to obtain a preset complex light field distribution of the target mask surface, coordinates of the target mask surface, and coordinates of a photoresist surface of a vertical optical axis obtained after the target mask surface is irradiated;
a first obtaining module 302, configured to obtain a current light intensity distribution of a photoresist surface according to coordinates of the target mask surface, coordinates of the photoresist surface, a preset complex light field distribution, and an objective function, where the objective function is used to obtain a light field distribution of an output image corresponding to an input light beam, where the output image is an imaging image of the light beam that passes through the target mask surface and is presented on the surface of the silicon wafer;
A determining module 303, configured to determine a constraint condition of light intensity distribution according to the current light intensity distribution and position information of the light resistance surface where coordinates fall in a plurality of areas, where the areas are generated by diffraction effects;
A first adjustment module 304 is configured to adjust a size parameter of the plurality of mask apertures in the target mask surface according to the constraint condition.
It should be noted that, the first obtaining module 301 in this embodiment may be used to perform the above-mentioned step S101, the first obtaining module 302 in this embodiment may be used to perform the above-mentioned step S102, the determining module 303 in this embodiment may be used to perform the above-mentioned step S103, and the first adjusting module 304 in this embodiment may be used to perform the above-mentioned step S104.
Through the module, after the current light intensity distribution of the light resistance surface is obtained according to the coordinates of the target mask surface, the coordinates of the light resistance surface, the preset complex light field distribution and the objective function, the constraint condition of the light intensity distribution is set based on the coordinates of the light resistance surface and the current light intensity distribution, so that the light intensity distribution interval to be solved on the light resistance surface is expanded, the size parameters of a plurality of mask holes in the target mask surface can be adjusted according to the constraint condition, the diffraction effect caused by introducing a field diaphragm in holographic lithography is eliminated, the manufacturing precision and quality of an integrated circuit are improved, and the problem that an effective processing method for the diffraction effect of the field diaphragm is not proposed in the related art is solved.
As an alternative embodiment, the determining module includes:
A determining unit for determining that coordinates of the photoresist surface fall on a first area of wafer exposure or a second area of aperture, wherein both the first area and the second area are generated by diffraction effect;
A first setting unit, configured to take an error value between a current light intensity distribution and an actual light intensity distribution as a first constraint condition when a first number of coordinates of the photoresist surface falls in a first area, where the error value is less than or equal to a preset threshold value; or alternatively
And a second setting unit configured to set 0 as a second constraint condition with a current light intensity distribution in a case where a second number of coordinates of the light-blocking surface falls in the second region.
As an alternative embodiment, the first adjustment module includes:
the solving unit is used for solving an optimal solution by combining the first constraint condition with a target optimization algorithm, wherein the optimal solution corresponds to the size parameter of the mask hole, so that the mask generates light intensity conforming to the first constraint condition based on the size parameter; or alternatively
And the third setting unit is used for adjusting the size parameter of the mask hole based on the second constraint condition so that the light intensity corresponding to the coordinates of the light resistance surface is 0.
As an alternative embodiment, the first obtaining module includes:
The first obtaining unit is used for obtaining the light field distribution of the light resistance surface according to the coordinates of the target mask surface, the coordinates of the light resistance surface, the preset complex light field distribution and the objective function;
and the second obtaining unit is used for obtaining the current light intensity distribution according to the light field distribution of the light resistance surface.
As an alternative embodiment, the apparatus further comprises:
The first comparison module is used for comparing the current light intensity distribution with the actual light intensity distribution after the current light intensity distribution is obtained according to the light field distribution of the light resistance surface;
The second adjusting module is used for not adjusting the preset complex light field distribution and taking the preset complex light field distribution as a target complex light field distribution under the condition that the error value between the current light intensity distribution and the actual light intensity distribution is smaller than or equal to a preset threshold value; under the condition that the error value between the current light intensity distribution and the actual light intensity distribution is larger than a preset threshold value, adjusting the preset complex light field distribution until the error value between the current light intensity distribution and the actual light intensity distribution is smaller than or equal to the preset threshold value, and obtaining target complex light field distribution;
and the second obtaining module is used for obtaining the light field distribution of the photoresist surface of the next iteration by utilizing the target complex light field distribution, the coordinates of the target mask surface, the coordinates of the photoresist surface and the objective function.
As an alternative embodiment, the apparatus further comprises:
A second acquisition module for acquiring the width of the aperture generated by the diffraction effect before determining the constraint condition of the light intensity distribution according to the position information of the coordinates of the light resistance surface falling on the plurality of areas and the current light intensity distribution;
the second comparison module is used for comparing the width with the preset display resolution size;
and the third acquisition module is used for acquiring the position information of the coordinate of the photoresist surface falling on a plurality of areas under the condition that the width is larger than the preset development resolution size.
As an alternative embodiment, the apparatus further comprises:
The setting module is used for setting the light intensity values corresponding to all the coordinates in the second area of the photoresist surface based on each second constraint condition after solving the optimal solution according to each first constraint condition of all the coordinates in the first area of the photoresist surface.
According to yet another aspect of an embodiment of the present application, there is also provided an electronic device, which may be a server, a terminal, or a combination thereof, for implementing the above method for processing diffraction effects.
Fig. 4 is a block diagram of an alternative electronic device, according to an embodiment of the application, as shown in fig. 4, comprising a processor 401, a communication interface 402, a memory 403 and a communication bus 404, wherein the processor 401, the communication interface 402 and the memory 403 perform communication with each other via the communication bus 404, wherein,
A memory 403 for storing a computer program;
the processor 401, when executing the computer program stored in the memory 403, implements the following steps:
Acquiring preset complex light field distribution of a target mask surface, coordinates of the target mask surface and coordinates of a photoresist surface with a vertical optical axis, which are obtained after the target mask surface is irradiated;
obtaining the current light intensity distribution of the light resistance surface according to the coordinates of the target mask surface, the coordinates of the light resistance surface, preset complex light field distribution and an objective function, wherein the objective function is used for obtaining the light field distribution of an output image corresponding to an input light beam, and the output image is an imaging image of the light beam which passes through the target mask surface and is displayed on the surface of the silicon wafer;
Determining a constraint condition of light intensity distribution according to the position information of the coordinates of the light resistance surface falling on a plurality of areas and the current light intensity distribution, wherein the areas are generated by diffraction effect;
And adjusting the size parameters of the plurality of mask holes in the target mask surface according to the constraint conditions.
Alternatively, in the present embodiment, the above-described communication bus may be a PCI (PERIPHERAL COMPONENT INTERCONNECT, peripheral component interconnect standard) bus, or an EISA (Extended Industry Standard Architecture ) bus, or the like. The communication bus may be classified as an address bus, a data bus, a control bus, or the like. For ease of illustration, only one thick line is shown in fig. 4, but not only one bus or one type of bus.
The communication interface is used for communication between the electronic device and other devices.
The memory may include RAM or may include non-volatile memory (non-volatile memory), such as at least one disk memory. Optionally, the memory may also be at least one memory device located remotely from the aforementioned processor. According to yet another aspect of an embodiment of the present application, there is also provided a storage medium. Alternatively, in the present embodiment, the above-described storage medium may be used for program code for executing the method of processing the diffraction effect.
Alternatively, in this embodiment, the storage medium may be located on at least one network device of the plurality of network devices in the network shown in the above embodiment.
Alternatively, in the present embodiment, the storage medium is configured to store program code for performing the steps of:
Acquiring preset complex light field distribution of a target mask surface, coordinates of the target mask surface and coordinates of a photoresist surface with a vertical optical axis, which are obtained after the target mask surface is irradiated;
obtaining the current light intensity distribution of the light resistance surface according to the coordinates of the target mask surface, the coordinates of the light resistance surface, preset complex light field distribution and an objective function, wherein the objective function is used for obtaining the light field distribution of an output image corresponding to an input light beam, and the output image is an imaging image of the light beam which passes through the target mask surface and is displayed on the surface of the silicon wafer;
Determining a constraint condition of light intensity distribution according to the position information of the coordinates of the light resistance surface falling on a plurality of areas and the current light intensity distribution, wherein the areas are generated by diffraction effect;
And adjusting the size parameters of the plurality of mask holes in the target mask surface according to the constraint conditions.
Alternatively, specific examples in the present embodiment may refer to examples described in the above embodiments, which are not described in detail in the present embodiment.
Alternatively, in the present embodiment, the storage medium may include, but is not limited to: various media capable of storing program codes, such as a U disk, ROM, RAM, a mobile hard disk, a magnetic disk or an optical disk.
According to yet another aspect of embodiments of the present application, there is also provided a computer program product or computer program comprising computer instructions stored in a computer readable storage medium; the computer instructions are read from a computer-readable storage medium by a processor of a computer device, which executes the computer instructions, causing the computer device to perform the method steps of any of the embodiments described above for processing diffraction effects.
The foregoing embodiment numbers of the present application are merely for the purpose of description, and do not represent the advantages or disadvantages of the embodiments.
The integrated units in the above embodiments may be stored in the above-described computer-readable storage medium if implemented in the form of software functional units and sold or used as separate products. Based on such understanding, the technical solution of the present application may be embodied essentially or partly in the form of a software product, or all or part of the technical solution, which is stored in a storage medium, and includes several instructions for causing one or more computer devices (which may be personal computers, servers or network devices, etc.) to perform all or part of the steps of the method for processing diffraction effects according to the embodiments of the present application.
In the foregoing embodiments of the present application, the descriptions of the embodiments are emphasized, and for a portion of this disclosure that is not described in detail in this embodiment, reference is made to the related descriptions of other embodiments.
In several embodiments provided by the present application, it should be understood that the disclosed client may be implemented in other manners. The above-described embodiments of the apparatus are merely exemplary, and are merely a logical functional division, and there may be other manners of dividing the apparatus in actual implementation, for example, multiple units or components may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be through some interfaces, units or modules, or may be in electrical or other forms.
The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed over a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution provided in the present embodiment.
In addition, each functional unit in the embodiments of the present application may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in software functional units.
The foregoing is merely a preferred embodiment of the present application and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present application, which are intended to be comprehended within the scope of the present application.
Claims (10)
1. A method of treating diffraction effects, the method comprising:
acquiring preset complex light field distribution of a target mask surface, coordinates of the target mask surface and coordinates of a photoresist surface with a vertical optical axis, which are obtained after the target mask surface is irradiated;
Obtaining the current light intensity distribution of the light resistance surface according to the coordinates of the target mask surface, the coordinates of the light resistance surface, the preset complex light field distribution and an objective function, wherein the objective function is used for obtaining the light field distribution of an output image corresponding to an input light beam, and the output image is an imaging image of the light beam passing through the target mask surface and showing on the surface of a silicon wafer;
Determining a constraint condition of light intensity distribution according to the position information of the coordinates of the light resistance surface falling on a plurality of areas and the current light intensity distribution, wherein the areas are generated by diffraction effect;
and adjusting the size parameters of a plurality of mask holes in the target mask surface according to the constraint conditions.
2. The method according to claim 1, wherein the determining the constraint condition of the light intensity distribution based on the current light intensity distribution and the positional information of the light-blocking surface where the coordinates fall in the plurality of areas includes:
determining that the coordinates of the photoresist surface fall on a first area of wafer exposure or a second area of aperture, wherein both the first area and the second area are generated by diffraction effect;
Under the condition that a first number of coordinates of the light resistance surface fall in the first area, taking an error value between the current light intensity distribution and the actual light intensity distribution as a first constraint condition, wherein the error value is smaller than or equal to a preset threshold value; or alternatively
And setting the current light intensity distribution to 0 as a second constraint condition in the case that a second number of coordinates of the light-blocking surface fall in the second region.
3. The method of claim 2, wherein said adjusting the size parameters of the plurality of mask apertures in the target mask face according to the constraint comprises:
Solving an optimal solution by combining the first constraint condition with a target optimization algorithm, wherein the optimal solution corresponds to the size parameter of the mask hole, so that the mask generates light intensity conforming to the first constraint condition based on the size parameter; or alternatively
And adjusting the size parameter of the mask hole based on the second constraint condition so that the light intensity corresponding to the coordinate of the photoresist surface is 0.
4. The method according to claim 1, wherein the obtaining the current light intensity distribution of the photoresist surface according to the coordinates of the target mask surface, the coordinates of the photoresist surface, the preset complex light field distribution and the objective function includes:
obtaining the light field distribution of the light resistance surface according to the coordinates of the target mask surface, the coordinates of the light resistance surface, the preset complex light field distribution and an objective function;
And obtaining the current light intensity distribution according to the light field distribution of the light resistance surface.
5. The method of claim 4, wherein after the current light intensity distribution is obtained from the light field distribution of the light-blocking surface, the method comprises:
comparing the current light intensity distribution with an actual light intensity distribution;
Under the condition that the error value between the current light intensity distribution and the actual light intensity distribution is smaller than or equal to a preset threshold value, the preset complex light field distribution is not regulated any more, and the preset complex light field distribution is used as a target complex light field distribution; under the condition that the error value between the current light intensity distribution and the actual light intensity distribution is larger than the preset threshold value, adjusting the preset complex light field distribution until the error value between the current light intensity distribution and the actual light intensity distribution is smaller than or equal to the preset threshold value, and obtaining the target complex light field distribution;
And obtaining the light field distribution of the photoresist surface of the next iteration by using the target complex light field distribution, the coordinates of the target mask surface, the coordinates of the photoresist surface and the objective function.
6. The method according to claim 1, wherein before the determination of the constraint condition of the light intensity distribution based on the current light intensity distribution and the positional information on the areas where the coordinates of the light-blocking surface fall, the method further comprises:
acquiring the width of an aperture generated by diffraction effects;
Comparing the width with a preset display resolution size;
and under the condition that the width is larger than the preset development resolution, acquiring the position information of the plurality of areas where the coordinates of the photoresist surface fall.
7. A method according to claim 3, characterized in that the method further comprises:
After solving the optimal solution according to each first constraint condition of all coordinates in a first area of the photoresist surface, setting light intensity values corresponding to all coordinates in a second area of the photoresist surface based on each second constraint condition.
8. An apparatus for processing diffraction effects, the apparatus comprising:
The first acquisition module is used for acquiring preset complex light field distribution of a target mask surface, coordinates of the target mask surface and coordinates of a light resistance surface of a vertical optical axis, which are obtained after the target mask surface is irradiated;
The first obtaining module is used for obtaining the current light intensity distribution of the light resistance surface according to the coordinates of the target mask surface, the coordinates of the light resistance surface, the preset complex light field distribution and an objective function, wherein the objective function is used for obtaining the light field distribution of an output image corresponding to an input light beam, and the output image is an imaging image of the light beam which passes through the target mask surface and is displayed on the surface of the silicon wafer;
A determining module, configured to determine a constraint condition of light intensity distribution according to position information of the coordinates of the photoresist surface falling on a plurality of areas and the current light intensity distribution, where the areas are generated by diffraction effects;
and the first adjusting module is used for adjusting the size parameters of the plurality of mask holes in the target mask surface according to the constraint conditions.
9. An electronic device comprising a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory communicate with each other via the communication bus, characterized in that,
The memory is used for storing a computer program;
The processor is configured to perform the method steps of any of claims 1 to 7 by running the computer program stored on the memory.
10. A computer-readable storage medium, characterized in that the storage medium has stored therein a computer program, wherein the computer program, when executed by a processor, implements the method steps of any of claims 1 to 7.
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| CN2022115713858 | 2022-12-08 | ||
| CN202211571385 | 2022-12-08 |
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