CN110261957B - High-backward stimulated Brillouin scattering gain micro-nano structure on-chip photoacoustic waveguide - Google Patents
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 72
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 69
- 238000005253 cladding Methods 0.000 claims abstract description 56
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 230000003287 optical effect Effects 0.000 claims abstract description 27
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 27
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 20
- CUGMJFZCCDSABL-UHFFFAOYSA-N arsenic(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[As+3].[As+3] CUGMJFZCCDSABL-UHFFFAOYSA-N 0.000 claims abstract 6
- 239000011247 coating layer Substances 0.000 claims description 53
- 239000010410 layer Substances 0.000 claims description 43
- 239000000523 sample Substances 0.000 claims description 3
- 238000006073 displacement reaction Methods 0.000 abstract description 17
- 230000005855 radiation Effects 0.000 abstract description 13
- 238000009826 distribution Methods 0.000 abstract description 9
- 229910052785 arsenic Inorganic materials 0.000 abstract description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract description 5
- 239000002131 composite material Substances 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 2
- UKUVVAMSXXBMRX-UHFFFAOYSA-N 2,4,5-trithia-1,3-diarsabicyclo[1.1.1]pentane Chemical compound S1[As]2S[As]1S2 UKUVVAMSXXBMRX-UHFFFAOYSA-N 0.000 description 14
- 238000013461 design Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000002708 enhancing effect Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000001808 coupling effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 206010063385 Intellectualisation Diseases 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/107—Subwavelength-diameter waveguides, e.g. nanowires
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- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1205—Arsenic sulfide (As2S3)
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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Abstract
The invention provides a high backward stimulated Brillouin scattering gain optical acoustic waveguide on a micro-nano structure sheet, which comprises a waveguide core, a silicon cladding layer and a silicon dioxide substrate, wherein the waveguide core is made of an arsenic sulfide material; the waveguide core is prepared on the silicon dioxide substrate; the waveguide core is made of arsenic sulfide, and the section of the waveguide core is rectangular; a rectangular through hole is formed in the center of the waveguide core from top to bottom, and air is filled in the through hole; the silicon cladding layer symmetrically wraps the waveguide core, the upper side and the lower side of the through hole and the left side and the right side of the waveguide core at the outer part, so that a rectangular through hole filled with air is formed in the center of the waveguide core. According to the invention, the silicon cladding layers are symmetrically coated on the left side and the right side of the upper side and the lower side of the arsenic sulfide material, and the rectangular through hole filled with air from top to bottom is formed in the center of the arsenic sulfide material, so that the special light radiation pressure in the micro-nano structure is enhanced, the acoustic mode displacement field distribution is regulated and controlled, and the backward stimulated Brillouin scattering gain of the micro-nano structure on the silicon dioxide sheet based on the arsenic sulfide-silicon composite material is effectively improved.
Description
Technical Field
The invention belongs to the technical field of nonlinear optics and micro-nano photonics, and particularly relates to a micro-nano structure on-chip optical acoustic waveguide with high backward stimulated Brillouin scattering gain.
Background
With the development of society towards high informatization and intellectualization, the requirements of the next generation of photoelectric systems on miniaturization and integration of optoelectronic devices are higher and higher. With the rapid development of modern micro-nano processing technology and testing means in recent years, it has become possible to manufacture and characterize optical structures and devices with characteristic dimensions in the micron or even nano-scale, and corresponding optical research also enters the field of micro-nano photonics.
Stimulated Brillouin Scattering (SBS) is a nonlinear scattering process in which light and sound waves interact. This effect finds applications in many fields, such as ultra-narrow bandwidth lasers, sensing, slow and fast light, microwave signal processing, etc. Different from SBS in traditional system, SBS under micro-nano scale can generate great SBS gain because its acousto-optic coupling effect is increased greatly. SBS effect at micro-nano scale has begun to receive much attention since the first observation of SBS in a solid silica glass core at sub-wavelength level of Photonic Crystal Fiber (PCF) by p.daniese et al, university of Bath, uk, 2000, and experimental results indicate that brillouin scattering is strongly affected by nano-scale microstructure.
Silicon On Insulator (SOI) technology on an insulating substrate has become a popular technology in the design of integrated optoelectronic systems due to high integration level, low cost, good stability, and significant nonlinear optical phenomena. However, since the acoustic wave excited in silicon leaks into the silicon dioxide insulating substrate, which is not favorable for the generation of the brillouin scattering effect, the SOI technology is not favorable for the design of optical devices with high stimulated brillouin gain, and the implementation of devices such as a brillouin laser based on the SOI technology, a comb-shaped light source, adjustable delay based on slow light and fast light, and photonic integration based on microwave photonic signal processing on a silicon platform is limited. Therefore, how to overcome the defects of the prior art and obtain high SBS gain based on SOI, especially a design scheme of a Backward SBS (Backward SBS) gain system is a problem to be solved by the design of an acoustic waveguide on a micro-nano structure sheet.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a micro-nano structure on-chip photoacoustic wave guide structure with high backward stimulated Brillouin scattering gain. The structure of the waveguide is a silicon dioxide on-chip groove waveguide structure based on the arsenic sulfide-silicon composite material, and the waveguide is combined with an SOI (silicon on insulator), and has the characteristics of good stability, high integration level and capability of exciting high BSBS (barium base band) gain.
In order to achieve the purpose, the invention adopts the following technical scheme: a high backward stimulated Brillouin scattering gain optical acoustic waveguide on a micro-nano structure sheet comprises a waveguide core made of an arsenic sulfide material, a silicon cladding layer and a silicon dioxide substrate; the waveguide core is prepared on the silicon dioxide substrate; the waveguide core is made of arsenic sulfide, and the section of the waveguide core is rectangular; a rectangular through hole is formed in the center of the waveguide core from top to bottom, and air is filled in the rectangular through hole; the silicon cladding layer symmetrically wraps the waveguide core, the upper side and the lower side of the rectangular through hole and the left side and the right side of the waveguide core at the outer part, so that the rectangular through hole filled with air is formed in the center of the waveguide core; the thicknesses of the silicon cladding layers on the four sides of the arsenic sulfide waveguide core, namely the thicknesses of the upper side silicon cladding layer, the lower side silicon cladding layer, the left side silicon cladding layer and the right side silicon cladding layer are respectively defined as the thicknesses of the upper side silicon cladding layer, the lower side silicon cladding layer, the left side silicon cladding layer and the right side silicon cladding layer; the thicknesses of the upper side silicon coating layer and the lower side silicon coating layer are smaller than those of the left side coating layer and the right side coating layer. The silicon coating layers on the left side and the right side limit an optical field to a waveguide core part, the silicon coating layers on the upper side and the lower side play a role in regulating and controlling the distribution position of the acoustic field, and the rectangular through holes filled with air increase the light radiation pressure of an arsenic sulfide-air groove interface and play a role in enhancing BSBS gain.
In order to optimize the technical scheme, the specific measures adopted further comprise:
the waveguide core is rectangular, with a width of 180nm and a height of 340 nm.
The arsenic sulfide material has a relative dielectric constant of 5.65. Photoelastic coefficient P of arsenious sulfide material11＝0.25，P12＝0.24，P440.005. Arsenic sulfide material rigidity coefficient C11＝2.1×1010Pa，C12＝8.36×109Pa，C44＝6.34×109Pa. The density of the arsenic sulfide material is 3210kg/m3。
The rectangular through hole penetrates through the waveguide core, and the cross section width of the rectangular through hole is 10 am. The rectangular via hole portion is filled with air, and has a relative dielectric constant of 1.
The silicon cladding layer is used for cladding the waveguide core and forms symmetrical cladding on the upper side, the lower side, the left side and the right side respectively. The thicknesses of the upper side coating layer and the lower side coating layer of the silicon coating layer refer to the thicknesses of the upper side coating layer and the lower side coating layer of the silicon coating layer on the waveguide core, the thicknesses of the upper side coating layer and the lower side coating layer are the same, and the thickness of the upper side coating layer and the lower side coating layer is half of the difference value between the vertical height of the coating layer and the vertical height of; the thickness of the left and right side coating layers of the silicon coating layer refers to the thickness of the coating layers of the silicon coating layer on the left and right sides of the waveguide core, and the thickness of the left and right side coating layers is the same. By selecting the appropriate thicknesses of the upper side cladding layer and the lower side cladding layer, the distribution of the acoustic displacement field in the rectangular waveguide shape can be adjusted, and the effect of enhancing the backward Brillouin scattering gain is achieved.
The width of the silicon coating layer is the distance between the outer boundaries of the coating layers at the left side and the right side and is 450 nm. The height of the silicon coating layer is the distance between the outer boundaries of the coating layers at the upper side and the lower side, and is 365 nm.
The silicon cladding layer is used for symmetrically cladding the upper side, the lower side, the left side and the right side of the waveguide core respectively and is made of silicon. The relative dielectric constant of silicon material is 12.5. Photoelastic coefficient P of silicon material11＝-0.09，P12＝0.017，P44-0.051. Coefficient of stiffness C of silicon material11＝2.17×1011Pa，C12＝4.83×1010Pa，C44＝6.71×1010Pa. The density of the silicon material is 2329kg/m3。
The width of the silicon dioxide substrate is larger than that of the silicon cladding layer, so that the whole waveguide core is prepared on the substrate.
The silicon dioxide substrate has a thickness of 300nm and a width of 1000 nm. The silicon dioxide substrate is an insulating substrate and the material of the silicon dioxide substrate is silicon dioxide. The relative dielectric constant of the silicon dioxide material is 2.25. SiO 22Photoelastic coefficient of material P11＝0.121，P12＝0.27，P44-0.075. Stiffness coefficient C of silicon dioxide material11＝7.85×1010Pa，C12＝1.61×1010Pa，C44＝3.12×1010Pa. The density of the silicon dioxide material is 2201kg/m3. The insulating substrate increases the stability of the waveguide system.
The pump light and the probe light with the wavelength of 1550nm propagate in the waveguide in opposite directions, the fundamental mode optical field is concentrated at the waveguide core and the rectangular through hole filled with air, and the displacement field of each order acoustic mode excited by the two optical waves is limited at the waveguide core part.
The invention has the beneficial effects that: according to the optical acoustic waveguide on the micro-nano structure sheet with high backward stimulated Brillouin scattering gain, the rectangular through hole filled with air is formed by arranging the rectangular through hole from top to bottom in the center of the arsenic sulfide waveguide core coated by the silicon coating layer, so that the defect that the acoustic loss coefficient is too large due to the fact that the acoustic wave in a pure SOI structure is easy to leak to a silicon dioxide substrate is overcome, and BSBS is enhanced. The existence of the rectangular through holes filled with air and the upper side silicon coating layer and the lower side silicon coating layer can strengthen the special light radiation pressure in the micro-nano structure and adjust the sound displacement field distribution, thereby jointly strengthening BSBS and effectively improving the BSBS gain of the micro-nano structure on the silicon dioxide sheet based on the arsenic sulfide-silicon composite material.
Drawings
Fig. 1 is a cross-sectional view of an optical waveguide on a micro-nano structure sheet with high backward stimulated brillouin scattering gain according to the present invention.
Fig. 2 is a schematic diagram of distribution of optical acoustic wave guided excitation fundamental mode optical field components Ex, Ey and Ez on the micro-nano structure sheet with high backward stimulated brillouin scattering gain.
FIG. 3 shows the first 5 acoustic mode displacement fields u excited in the optical acoustic waveguide on the high backward stimulated Brillouin scattering gain micro-nano structure sheet of the present inventionx，uy，uzSchematic distribution.
Fig. 4 is a schematic diagram of gain peaks corresponding to backward stimulated brillouin scattering in the first 5 acoustic modes excited in the optical acoustic waveguide on the micro-nano structure sheet with high backward stimulated brillouin scattering gain.
Fig. 5 is a schematic diagram of a total gain peak gain curve of a fifth acoustic mode excited by optical acoustic waveguides on the micro-nano structure sheet with high backward stimulated brillouin scattering gain in different sizes.
The attached drawings are annotated: 1. a waveguide core; 2. a silicon cladding layer; 3. a silicon dioxide substrate; 4. a rectangular through hole.
Detailed Description
The present invention will now be described in further detail with reference to the accompanying drawings.
As shown in fig. 1, an embodiment of the present invention provides a high backward stimulated brillouin scattering gain optical acoustic waveguide on a micro-nano structure sheet, where the waveguide is composed of a waveguide core 1 made of an arsenic sulfide material, a silicon cladding layer 2, and a silicon dioxide substrate 3; the waveguide core 1 is prepared on a silicon dioxide substrate 3; the section of the waveguide core 1 is rectangular; a rectangular through hole 4 is formed in the center of the waveguide core 1 from top to bottom, and air is filled in the rectangular through hole 4; the silicon coating layer 2 completely coats the waveguide core 1, the upper surface and the lower surface of the rectangular through hole 4 and the left side surface and the right side surface of the waveguide core 1 at the outside, so that a rectangular through hole filled with air is formed in the center of the waveguide core 1; the thicknesses of the upper side coating layer and the lower side coating layer of the silicon coating layer 2 are smaller than those of the left side coating layer and the right side coating layer.
In fig. 1, the size parameters are defined as a-450 nm, b-365 nm, c-180 nm, d-340 nm, e-10 nm, f-1000 nm, and g-300 nm. The waveguide core 1 has a rectangular shape, a width c of 180nm and a height d of 340 nm. The waveguide core 1 is made of an arsenic sulfide material, a rectangular through hole 4 is formed in the middle of the arsenic sulfide material from top to bottom, and the section width e is 10 nm. The outside of the waveguide core 1 is completely coated by the silicon coating layer, so that the left side and the right side of the upper side and the lower side of the waveguide core 1 are completely coated by the silicon coating layer, the upper side and the lower side of the rectangular through hole 4 in the waveguide core 1 are also coated by the silicon coating layer to form a rectangular through hole filled with air, and the rectangular through hole coated by the coating layer is a rectangular closed cavity filled with air. The silicon coating layer 2 has a width a of 450nm and a height b of 365 nm. The thicknesses of the upper and lower side cladding layers of the silicon cladding layer 2 refer to the thicknesses of the upper and lower sides of the silicon cladding layer 2 on the waveguide core 1, the thicknesses of the upper and lower side silicon cladding layers of the silicon cladding layer 2 are the same and are half of the difference between the vertical height of the cladding layer and the vertical height of the waveguide core 1, namely the thickness h of the upper and lower side cladding layers of the silicon cladding layer 2 is (b-d)/2; the thickness of the left and right silicon cladding layers refers to the thickness of the silicon cladding layer 2 on the left and right sides of the waveguide core 1; the silicon clad layers 2 on the left and right sides have the same thickness. The silicon cladding layer 2 is used to satisfy the slot waveguide structure design, so that the optical field is concentrated on the waveguide core 1 portion. By selecting the thickness of the upper side cladding layer and the lower side cladding layer of the silicon cladding layer, the distribution of the acoustic displacement field in the rectangular waveguide shape can be adjusted, and the effect of enhancing the backward Brillouin scattering gain is achieved. The waveguide structure is placed on a silica substrate 3 having a thickness g of 300nm and a width f of 1000 nm.
Since arsenic sulfide has a lower stiffness coefficient than silicon and silica materials, acoustic waves propagate through the material with the corresponding minimum acoustic velocity, and can be confined to propagating through the arsenic sulfide waveguide core 1. Because the radiation pressure is in direct proportion to the relative dielectric constant difference of different materials on the boundary, the introduction of the rectangular through hole filled with air increases the relative dielectric constant difference of the boundary of the arsenic sulfide-air slot, so that the light radiation pressure on the boundary is enhanced. In the micro-nano scale structure, BSBS is caused by both optical radiation pressure and electrostrictive force, so that the enhancement of the optical radiation pressure can effectively enhance the BSBS gain. The pump light and probe light with 1550nm wavelength propagate in the waveguide structure in opposite directions, and the fundamental mode optical field is mainly concentrated at the rectangular waveguide core 1 and the rectangular through hole 4. The acoustic displacement fields of the orders excited by the two optical waves are confined to the rectangular waveguide core 1 portion.
Under the incidence of light with wavelength of 1550nm, three optical field components Ex, Ey and Ez of the fundamental mode optical field are shown in FIG. 2, and the first five-order acoustic mode displacement field component ux、uy、uzAs shown in FIG. 3, A1-A5 correspond to the first to fifth order acoustic mode displacement fields, respectively, and it can be seen that the acoustic wave is well confined in the arsenic sulfide waveguide core.
In this example, the electrostrictive force induced BSBS peak Gain (labeled as electrostrictive Gain), the Radiation Pressure induced BSBS peak Gain (labeled as Radiation Pressure Gain), the Total light force induced BSBS peak Gain (Total Gain), and their corresponding acoustic frequency shifts for the first five-order mode displacement fields (labeled as A1-A5, respectively) of FIG. 3 are shown in FIG. 4. It can be seen that only acoustic mode displacement fields that satisfy the correct acousto-optic distribution correspondence can produce a strong BSBS gain.
The first, third and fifth sound mode displacement fields can be in effective acousto-optic coupling with the optical field to generate stronger gain. The BSBS gain generated by the displacement field of the first acoustic mode is 2.19 multiplied by 103W-1m-1Is electrostrictive force induced gain of 5.66X 102W-1m-1And radiation pressure induced gain of 5.29 x 102W-1m-1The result of the combined action. Similarly, the BSBS gain of the third sound mode displacement field is 6.11 multiplied by 103W-1m-1Also its electrostrictive force induced gain is 1.15X 103W-1m-1And radiation pressure induced gain of 1.95 × 103W-1m-1The result of the combined action. BS generated by fifth sound mode displacement fieldThe BS gain is at a maximum of 2.78 × 104W-1m-1The gain is 2.71X 10, in which the gain caused by radiation pressure is dominant4W-1m-1. The fifth acoustic mode displacement field generated gain was 77% of the gain generated by all acoustic modes, consistent with the desired result.
In this embodiment, the other dimensions are fixed, and the variation of the thickness h of the upper and lower cladding layers of the silicon cladding layer by 0-22.5 nm (corresponding to the variation range d of 320-365 nm) is calculated to correspond to the variation curve of the total gain peak value of the fifth acoustic mode, and as a result, as shown in fig. 5, the gain curve varies with the variation of the thickness of the upper and lower cladding layers 2. It can be seen that as h increases, the gain curve increases and then decreases.
Among them, it is seen that the gain curve has a maximum value of 2.88 × 10 at h of 6.5nm (d of 352nm)4W-1m-1. The peak gain value is 10 of the corresponding BSBS peak gain value in the traditional optical fiber structure4And (4) doubling.
Among them, it can be seen that the BSBS gain factor can be increased by selecting an appropriate coating thickness as compared with the structure in which h is 0 (i.e., no upper and lower side silicon coating layers).
The appropriate structural parameters can be selected according to actual conditions, so that the BSBS gain under different use scenes can be changed.
In conclusion, the structure of the invention can limit the sound wave and the light wave at the waveguide core and the rectangular through hole simultaneously, strengthen the acoustooptic coupling effect dominated by the radiation pressure at the boundary of the through hole, stimulate the high backward stimulated Brillouin scattering gain, and simultaneously the thicknesses of the upper and lower side coating layers of the silicon coating layer can adjust the distribution of the sound wave displacement field in the rectangular waveguide shape, thereby playing the role of enhancing the backward Brillouin scattering gain. Wherein, under a certain size (namely a is 450nm, b is 365nm, c is 180nm, d is 352nm, e is 10nm, f is 1000nm, g is 300nm), the gain peak value of the backward brillouin scattering can reach 2.88 multiplied by 104W-1m-1. The gain peak value is 10 of the corresponding gain of the backward stimulated Brillouin scattering peak value in the traditional optical fiber structure4And (4) doubling. The invention can obtain the maximum BSBS gain on the basis of SOI and can be used for the SOI-basedThe micro-nano waveguide device on the silicon dioxide chip with high backward stimulated Brillouin scattering gain provides a new idea for the design and implementation of the micro-nano waveguide on the silicon dioxide chip based on high BSBS gain in the field of various integrated optoelectronic devices in the future.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above-mentioned embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may be made by those skilled in the art without departing from the principle of the invention.
Claims (7)
1. The optical acoustic waveguide on the micro-nano structure sheet with high backward stimulated Brillouin scattering gain is characterized by comprising a waveguide core (1) made of an arsenic sulfide material, a silicon cladding layer (2) and a silicon dioxide substrate (3); the waveguide core (1) is prepared on a silicon dioxide substrate (3); the waveguide core (1) is made of arsenic sulfide, and the section of the waveguide core is rectangular; a rectangular through hole (4) is formed in the center of the waveguide core (1) from top to bottom, and air is filled in the rectangular through hole (4); the silicon cladding layer (2) symmetrically coats the upper side and the lower side of the waveguide core (1) and the rectangular through hole (4) and the left side and the right side of the waveguide core (1) at the outside, so that the rectangular through hole filled with air is formed in the center of the waveguide core (1), and the thicknesses of the upper side cladding layer and the lower side cladding layer of the silicon cladding layer (2) are smaller than those of the left side cladding layer and the right side cladding layer.
2. The waveguide according to claim 1, wherein the upper and lower cladding thicknesses of the silicon cladding (2) refer to cladding thicknesses of the silicon cladding (2) on the upper and lower sides of the waveguide core (1), and the upper and lower cladding thicknesses of the silicon cladding are the same; the thicknesses of the left and right side coating layers of the silicon coating layer (2) refer to the thicknesses of the coating layers of the silicon coating layer (2) on the left and right sides of the waveguide core, and the thicknesses of the left and right side coating layers of the silicon coating layer (2) are the same; the thickness values of the upper side and the lower side of the silicon coating layer (2) are half of the difference between the vertical height of the coating layer and the vertical height of the waveguide core (1).
3. A waveguide according to claim 1, characterized in that the waveguide core (1) is rectangular with a width of 180nm and a height of 340 nm.
4. A waveguide according to claim 1, characterized in that the rectangular via (4) penetrates into the waveguide core (1), the cross-sectional width of the rectangular via (4) being 10 nm.
5. The waveguide according to claim 1, wherein the width of the silicon cladding (2) is 450nm with a left and right side cladding outer boundary spacing; the height of the silicon coating layer (2) is the distance between the outer boundaries of the upper and lower side coating layers and is 365 nm.
6. A waveguide according to claim 1, characterized in that the silicon dioxide substrate (3) has a thickness of 300nm and a width of 1000 nm.
7. The waveguide of claim 1, wherein the pump light and probe light of 1550nm wavelength propagate in opposite directions in the waveguide.
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Citations (5)
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|---|---|---|---|---|
| CN102169206A (en) * | 2011-04-28 | 2011-08-31 | 北京航空航天大学 | low loss surface plasmon optical waveguide |
| CN102664350A (en) * | 2012-03-09 | 2012-09-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | Plasma excimer nanometer laser |
| US9268092B1 (en) * | 2013-03-14 | 2016-02-23 | Sandia Corporation | Guided wave opto-acoustic device |
| CN109038211A (en) * | 2018-08-14 | 2018-12-18 | 华中科技大学 | A kind of laser light source based on acousto-optic interaction |
| CN109188599A (en) * | 2018-10-30 | 2019-01-11 | 西安邮电大学 | A kind of dual-trench type big negative dispersion waveguide in 1530nm to 1580nm wavelength band |
-
2019
- 2019-06-25 CN CN201910546910.2A patent/CN110261957B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169206A (en) * | 2011-04-28 | 2011-08-31 | 北京航空航天大学 | low loss surface plasmon optical waveguide |
| CN102664350A (en) * | 2012-03-09 | 2012-09-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | Plasma excimer nanometer laser |
| US9268092B1 (en) * | 2013-03-14 | 2016-02-23 | Sandia Corporation | Guided wave opto-acoustic device |
| CN109038211A (en) * | 2018-08-14 | 2018-12-18 | 华中科技大学 | A kind of laser light source based on acousto-optic interaction |
| CN109188599A (en) * | 2018-10-30 | 2019-01-11 | 西安邮电大学 | A kind of dual-trench type big negative dispersion waveguide in 1530nm to 1580nm wavelength band |
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| CN110261957A (en) | 2019-09-20 |
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