CN109038211A - A kind of laser light source based on acousto-optic interaction - Google Patents
A kind of laser light source based on acousto-optic interaction Download PDFInfo
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- CN109038211A CN109038211A CN201810922094.6A CN201810922094A CN109038211A CN 109038211 A CN109038211 A CN 109038211A CN 201810922094 A CN201810922094 A CN 201810922094A CN 109038211 A CN109038211 A CN 109038211A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
Abstract
The invention discloses a kind of laser light sources based on acousto-optic interaction, including the straight wave guide (1) on substrate (7), phonon source (4) and two phonon crystal waveguides (2), straight wave guide (1) is located between two phonon crystal waveguides (2), two sides of straight wave guide (1) respectively with this two phonon crystal waveguides (2) close to；Phonon source (4) is located at one end of straight wave guide (1), for providing phonon to the straight wave guide (1)；Phonon crystal waveguide (2) is then for the phonon for meeting expected frequence requirement to be limited in the straight wave guide (1)；In addition, substrate (7) is silicon materials, straight wave guide (1) is germanium material or silicon materials.Present invention combination phonon crystal material, sound field is limited, reduce the leakage of sound field, to realize the laser light source (especially germanium silicon laser light source) based on acousto-optic interaction, it thus avoids straining or adulterating etc. the prior art used needed for preparing germanium silicon laser, improves the performance of device.
Description
Technical field
The invention belongs to integrated optics technique fields, more particularly, to a kind of laser light based on acousto-optic interaction
Source, especially a kind of germanium silicon laser light source of the laser light source.
Background technique
Silicon based photon technology can be realized wide bandwidth, high density, high speed, the signal processing of low cost and high-performance meter
It calculates, is the key technology of next generation communication system and data interconnection.Silicon substrate laser provides light source for integrated photonic device, is it
In Primary Component.Due to the characteristic of the indirect band gap of silicon, luminous efficiency is low, realizes the silicon substrate laser of efficient electric pump
Light source is always a challenge.
Similar with silicon, germanium is also indirect bandgap material, but its direct band gap is only 136meV higher than indirect band gap, close to directly
Tape splicing gap.In addition, germanium is compatible with CMOS technology, and successfully it has been grown on silicon substrate.Therefore, the germanium silicon of extension (is served as a contrast in silicon
Thus bottom surface extension germanium material obtains germanium silicon) it is suitable as the material of near infrared band laser.
Germanium silicon laser is usually realized using the techniques such as strain and doping.The band of germanium can be reduced using strain or doping
Gap is poor, to increase the probability that electronics occupies direct band gap, realizes efficient direct band gap recombination luminescence.But doping and strain
The quality that will affect epitaxial germanium layer reduces the performance of device.And it is larger using the germanium silicon laser threshold that above-mentioned technique is realized.
If injecting phonon into germanium material, the electronics filling rate of direct band gap can be improved, improve transfer rate, increase
The gain of photon realizes that laser exports using acousto-optic interaction.
Phonon crystal is a kind of material of periodic structure, possesses phonon-side bands, be can reduce using phonon crystal material
The leakage of sound field in germanium material is advantageously implemented the germanium silicon laser light source based on acousto-optic interaction of Low threshold.
There is presently no the technical solutions that germanium silicon laser light source is realized using phonon injection and phonon crystal.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, it is mutual based on acousto-optic that the purpose of the present invention is to provide one kind
The laser light source of effect, especially germanium silicon laser light source, wherein by the laser light source structure (especially laser resonator)
Details component composition and structure etc. improve, straight wave guide component (such as germanium straight wave guide component or silicon straight wave guide component)
Phonon crystal waveguide is arranged in two sides, by light field and can meet the phonon (correspond to sound field) of expected frequence requirement and is limited in straight wave guide
In component, the electronics filling rate for improving the direct band gap of germanium material or silicon materials is injected using phonon, to improve transfer rate；
Present invention combination phonon crystal material, limits sound field, reduces the leakage of sound field, is based on acousto-optic interaction to realize
Laser light source (especially germanium silicon laser light source), thus avoid straining or adulterate etc. preparing and use needed for germanium silicon laser
The prior art improves the performance of device.
To achieve the above object, it is proposed, according to the invention, provide a kind of laser light source based on acousto-optic interaction, feature
It is, including the straight wave guide (1) on substrate (7), phonon source (4) and two phonon crystal waveguides (2), the straight wave guide
(1) between this two phonon crystal waveguides (2), two sides of the straight wave guide (1) respectively with this two phonon crystal waves
Lead (2) close to；The phonon source (4) is located at one end of the straight wave guide (1), for providing phonon to the straight wave guide (1)；It is described
Phonon crystal waveguide (2) is then for the phonon for meeting expected frequence requirement to be limited in the straight wave guide (1)；
In addition, the substrate (7) is silicon materials, the straight wave guide (1) is germanium material or silicon materials.
As present invention further optimization, any one phonon crystal waveguide (2) is arranged with periodic cellular shape
The cylindrical air pore structure of column,
When the straight wave guide (1) is germanium material, described its phonon crystal lattice constant of phonon crystal waveguide (2) is 1.8
Nanometer~2.4 nanometers, the ratio between the radius of cylindrical air pore structure and lattice constant are 0.22~0.27；
When the straight wave guide (1) is silicon materials, described its phonon crystal lattice constant of phonon crystal waveguide (2) is 0.8
Nanometer~1.0 nanometers, the ratio between the radius of cylindrical air pore structure and lattice constant are 0.22~0.27.
As present invention further optimization, extension side of two end faces of the straight wave guide (1) with the straight wave guide (1)
To perpendicular.
As present invention further optimization, laser resonator is constituted between two end faces of the straight wave guide (1), this two
A end face is cleavage surface or is the waveguide optical grating for being capable of reflecting light field formed through over etching.
As present invention further optimization, the cross-sectional width of the straight wave guide (1) is 400 nanometers~800 nanometers, high
Degree is 200 nanometers~400 nanometers.
As present invention further optimization, the straight wave guide (1) is vacantly set on the substrate (7)；Preferably, institute
Stating straight wave guide (1) is vacantly set on the substrate (7) by first support (5) and second support (6), described first
Frame (5) and the second support (6) do not contact directly with the straight wave guide (1), but by with two phonon crystal waveguides
(2) it contacts respectively, thus supports the phonon crystal waveguide (2), and keep the straight wave guide (1) outstanding relative to the substrate (7)
It is empty.
As present invention further optimization, the first support (5) and the second support (6) are silicon materials；It is excellent
Choosing, the straight wave guide (1) is germanium material, and slit (3) are additionally provided on the straight wave guide (1), and the slit (3) is excellent
Choosing is set on the inside of the two sides of the straight wave guide (1), for providing the channel of corrosive agent；The corrosive agent is only used for corrosion silicon material
Material forms hollow structure to be correspondingly formed the first support (5) and the second support (6).
As present invention further optimization, when the straight wave guide (1) is germanium material, what the phonon source (4) provided
The frequency of the phonon is 1.90THz~1.95THz；
When the straight wave guide (1) is silicon materials, the frequency for the phonon that the phonon source (4) provides is 4.30THz
~4.40THz.
As present invention further optimization, the refractive index of material used by the phonon crystal waveguide (2) is less than institute
State the refractive index of straight wave guide (1) used material.
Contemplated above technical scheme through the invention, compared with prior art, since setting can be used for straight wave guide
The phonon source of phonon is inputted, and the phonon crystal waveguide that phonon is transmitted to outside straight wave guide can be limited in the setting of straight wave guide two sides,
Influence using phonon to straight wave guide material (such as germanium material or silicon materials) realizes the germanium silicon laser based on acousto-optic interaction
Light source or silicon substrate laser light source.Straight wave guide in the present invention can both use germanium material, can also use silicon materials；Germanium material institute
Corresponding Phonon frequency is (such as 1.90THz~1.95THz) near 1.93THz, and Phonon frequency corresponding to silicon materials is
4.34THz is nearby (such as 4.30THz~4.40THz).Existed with straight wave guide using germanium material, corresponding confined Phonon frequency
1.93THz nearby for, for the obtained germanium silicon laser light source based on acousto-optic interaction, when phonon source is to the straight of germanium material
When injecting sound field in waveguide, sound field is limited in hanging straight wave guide by phonon crystal waveguide, and enhancing is generated in straight wave guide
The electronics filling rate of acousto-optic interaction, the direct band gap of germanium material will will increase, and transfer rate increases accordingly, phonon therein
Gain and photon gain can be greater than loss, form phonon-photon laser effect, generate laser output.
The refractive index of material used by phonon crystal waveguide in the present invention is preferably less than the used material of straight wave guide
The refractive index of (such as germanium material)；By taking straight wave guide is using germanium material as an example, and the periodicity having by controlling phonon crystal waveguide
The cylindrical air pore structure of honeycomb arrangement, phonon crystal lattice constant are 1.8 nanometers~2.4 nanometers, cylindrical air holes
The ratio between radius and lattice constant are 0.22~0.27, and it is attached in 1.93THz frequency can be met to the frequencies such as 1.90THz~1.95THz
Close phonon is effectively limited in straight wave guide.
Straight wave guide in the present invention is preferably hanging structure, and sound field can be limited in straight wave guide, enhances acousto-optic phase interaction
With increasing the electronics filling rate of direct band gap, to improve transfer rate, realize the germanium silicon laser light source of Low threshold.
The present invention takes the lead in introducing spy in silicon substrate or germanium silicon laser light source (the especially resonator components of laser light source)
The phonon for determining frequency realizes silicon substrate laser light source and germanium silicon laser light source (substrate using acousto-optic interaction by limiting sound field
Silicon materials are selected, when straight wave guide still uses silicon materials, which is silicon substrate laser light source；When straight wave guide uses germanium material
When, which is germanium silicon laser light source).The present invention utilizes phonon crystal waveguide, and preferably by the hanging knot of straight wave guide
Structure realizes regulation and limitation for sound field.When straight wave guide uses germanium material, for the phonon crystal wave in the present invention
It leads, phonon crystal lattice constant is both preferably 1.8 nanometers~2.4 nanometers, and the ratio between radius and arrangement period are 0.22~0.27,
The phonon that frequency can be met to 1.90THz~1.95THz is effectively limited in straight wave guide, and it is mutual which participates in acousto-optic
Effect can generate bigger transfer rate.And for the straight wave guide using silicon materials, have by control phonon crystal waveguide
The cylindrical air pore structure of periodic cellular shape arrangement specifically receives the control of phonon crystal lattice constant for 0.8 nanometer~1.0
Rice, the ratio between cylindrical air pore radius and lattice constant control be 0.22~0.27, frequency can be met 4.30THz~
Phonon of the frequencies such as 4.40THz near 4.34THz is effectively limited in straight wave guide.These preferred phonon crystal waveguide junctions
Structure parameter, together with the structural parameters of straight wave guide and hanging waveguiding structure, so that sound field and light field have more in straight wave guide
Good overlapping, can further enhance acousto-optic interaction.The Refractive Index of Material of phonon crystal is selected to be less than the refractive index of straight wave guide,
The limitation for sound field is not only allowed for, is also beneficial to limit light field.
Detailed description of the invention
Fig. 1 is the top view of the germanium silicon laser light source structure provided in an embodiment of the present invention based on acousto-optic interaction.
Fig. 2 is the cross-sectional view of the germanium silicon laser light source provided in an embodiment of the present invention based on acousto-optic interaction.
Fig. 3 is that the arrangement of the cylindrical air holes of the honeycomb arrangement of photonic crystal structure provided in an embodiment of the present invention is shown
It is intended to.
The meaning of each appended drawing reference is as follows in figure: 1 be straight wave guide, 2 be phonon crystal waveguide, 3 be slit, 4 be phonon source,
5 it is first support, 6 be second support, 7 is substrate.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
Straight wave guide is for germanium material, the germanium silicon laser light source based on acousto-optic interaction may include straight wave in the present invention
It leads, phonon crystal waveguide, slit, phonon source, first support, second support and substrate；Wherein, straight wave guide is germanium material, substrate
Using silicon materials, straight wave guide can be previously deposited on a silicon substrate by way of extension；
Wherein, straight wave guide is laser resonator；Phonon crystal waveguide is the round airport knot of periodic cellular shape arrangement
Structure；Slit is the channel for instilling corrosive agent (such as hydrogen fluoride solution)；Phonon source is suitable for acousto-optic interaction for generating
Sound field can be an electroacoustic transducer；First support and second support are used to support straight wave guide and phonon crystal, make straight wave
It leads hanging；Sound field can be limited in straight wave guide by first support, second support and phonon crystal.
Germanium silicon laser light source provided by the present invention based on acousto-optic interaction, structure top view is as shown in Figure 1, packet
Include straight wave guide 1, phonon crystal waveguide 2, slit 3, phonon source 4；Phonon source generates phonon and is injected into the straight wave guide of germanium material,
Phonon frequency is preferably that the best Phonon frequency of indirect band gap transition in germanium material improves germanium material due to the injection of phonon
The rate of middle indirect band gap transition；Meanwhile straight wave guide is hanging relative to substrate, and the phonon crystal waveguide of its two sides is for specific
The sound field of frequency has restriction effect, and confined sound field frequency determines (phonon by the structural parameters of phonon crystal waveguide completely
The structural parameters of crystal waveguide and the corresponding relationship of sound field frequency can refer to related art, such as beam great mansion Xuan, Chen Chen honeycomb
Phonon crystal planar waveguide mode characteristic studies [J] scientific and technical innovation and application, 2017 (01): 64-65.；Confined sound field frequency
Rate can be determined in advance according to actual needs, and be accordingly arranged using the structural parameters of corresponding phonon crystal waveguide, with quilt
The Phonon frequency in straight wave guide is limited in as 1.93THz, the circle of periodic cellular shape arrangement is can be used in phonon crystal waveguide
Cylindrical air pore structure, phonon crystal lattice constant are 1.8 nanometers~2.4 nanometers, cylindrical air pore radius and lattice constant
The ratio between be 0.22~0.27)；Meanwhile the refractive index of the material of phonon crystal waveguide is less than the refractive index of the material of straight wave guide, because
This light field is limited in straight wave guide, optical field characteristics determined completely by the structural parameters of straight wave guide (structural parameters of straight wave guide with
The corresponding relationship of optical field characteristics can refer to related art, such as M.Nedeljkovic et al., " Surface-Grating-
Coupled Low-Loss Ge-on-Si Rib Waveguides and Multimode Interferometers,"in
IEEE Photonics Technology Letters,vol.27,no.10,pp.1040-1043,15May15,2015.；Directly
The cross section of waveguide can be set are as follows: width is 400 nanometers~800 nanometers, is highly 200 nanometers~400 nanometers, such as width
For 400 nanometers~500 nanometers, be highly 200 nanometers~300 nanometers, such parameter setting can realize light field mode and sound field
Mode is preferably overlapped, and further enhances acousto-optic interaction, the rectilinear direction of the cross section of straight wave guide perpendicular to straight wave guide)；
The sound field and light field being limited in the straight wave guide of germanium material generate the acousto-optic interaction of enhancing, the electronics filling of direct band gap
Rate improves, and transfer rate increases, and the gain of photon is improved；Straight wave guide both ends of the surface, can perpendicular to the extending direction of straight wave guide
Think cleavage surface or etch waveguide optical grating, form laser resonator, generates laser output.
In this example, straight wave guide two sides are phonon crystal waveguide, and sound field is limited by phonon crystal waveguide, cannot be to two sides
It propagates, can only be propagated along straight wave guide, to realize the regulation and limitation of sound field, sound field transmission characteristic is mainly by phonon crystal
Structural parameters determine.
In this example, the refractive index of the material of straight wave guide is higher than the refractive index of the material of phonon crystal waveguide, and light field is limited
It makes in straight wave guide, and optical field characteristics, by the structural parameter control of straight wave guide, it is mutual that this is conducive to the acousto-optic enhanced in straight wave guide
Effect improves transfer rate.
Phonon crystal waveguide 2 is for the phonon of expected frequence to be limited in the straight wave guide 1；Expected frequence can be set in advance
It sets, such as can be the best Phonon frequency of acousto-optic interaction in germanium material, near 1.93THz (such as 1.90THz~
1.95THz).Correspondingly, the Phonon frequency that the phonon source 4 generates may be the optimum sound of acousto-optic interaction in germanium material
Sub- frequency, i.e., near 1.93THz (such as 1.90THz~1.95THz).
The cross-sectional view of germanium silicon laser light source based on acousto-optic interaction is as schematically shown in Figure 2, bracket 5 and bracket
6 upper surface only supports phonon crystal waveguide and does not contact with straight wave guide, this makes straight wave guide completely hanging relative to substrate,
This avoids sound fields to be directly leaked on substrate, enhances the restriction effect to sound field, further enhances acousto-optic interaction,
Transfer rate is improved, and hanging structure is conducive to reduce the loss of light field, reduces laser threshold.
Straight wave guide is preferably hanging structure, and slit 3 is located at straight wave guide two sides (i.e. on the inside of both sides, as shown in Figure 1), slit 3
The corrosive agent that can be used as channel instillation hydrogen fluoride etc. corrodes first support 5 out and second support 6, and corrosive agent is only used for corroding
Silicon materials will not destroy straight wave guide 1.The top edge of first support 5 and second support 6 only support phonon crystal waveguide 2 and with it is straight
Waveguide 1 does not contact that (phonon crystal waveguide 2 can be for example, by the mode of ultra-violet curing glue sticking or Direct Bonding and straight wave
Lead 1 close contact).Also, to avoid negative effect of the slit 5 to waveguide transmission, the width of slit 5 may be configured as being less than
20nm, as shown in Figure 1, these slits can be period profile on straight wave guide 1, the ratio between length and period are smaller than 0.5.It removes
Outside by the way of slit, straight wave guide can also vacantly be formed using other modes processing.Certainly, straight wave guide can also be adopted
With non-hanging structure (that is, straight wave guide directly and substrate contact), only conduction efficiency slightly has decline at this time.It is narrow on straight wave guide
Seam is alternative construction, nonessential.
In the present invention two end faces of straight wave guide 1 with the extending direction of the straight wave guide 1 (i.e. the rectilinear direction of straight wave guide)
Perpendicular, since what is constituted between two end faces of straight wave guide is laser resonator, other unspecified places are all satisfied
The custom requirements of laser resonator.
In the present invention, the loss of sound field is reduced using the hanging structure and phonon crystal waveguide 2 of straight wave guide 1, vacantly
Structure is conducive to reduce the loss of light field, and the reasonable setting of the structural parameters of straight wave guide 1 is so that light field and sound field have preferable weight
It is folded, acousto-optic interaction is further enhanced, and avoid other germanium silicon laser light source technologies and generate using strain or doping
Lattice defect increases the shortcomings that absorption loss, due to the reduction of its loss and the enhancing of acousto-optic interaction, so that laser
Threshold value is lower.
Straight wave guide can also use silicon materials other than using germanium material in the present invention, and as corresponding to silicon materials
Phonon frequency be 4.34THz nearby (such as 4.30THz~4.40THz), at this point, in addition to phonon source 4 generate Phonon frequency need
Correspond to the cylindrical air holes that adjustment is outer, and phonon crystal waveguide 2 is still arranged with periodic cellular shape, phonon crystal lattice
Constant is 0.8 nanometer~1.0 nanometers, and the ratio between cylindrical air pore radius and lattice constant are 0.22~0.27.The cross of straight wave guide
Sectional dimension parameter etc. can remain unchanged, such as cross-sectional width is 400 nanometers~800 nanometers, is highly 200 nanometers~400
Nanometer, as width is 400 nanometers~500 nanometers, is highly 200 nanometers~300 nanometers.Also, straight wave guide is still preferably outstanding
Hollow structure.For example, the hanging structure of straight wave guide can by first use selective corrosion in a manner of directly on substrate, under straight wave guide
Bracket (these brackets need to reduce the contact area with straight wave guide as far as possible) out is corroded in side, then, recycles uv-curable glue
Phonon crystal waveguide 2 and straight wave guide 1 are in close contact by the modes such as bonding or Direct Bonding；At this point, just without adopting on straight wave guide
Use narrow slit structure.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (9)
1. a kind of laser light source based on acousto-optic interaction, which is characterized in that including be located at substrate (7) on straight wave guide (1),
Phonon source (4) and two phonon crystal waveguides (2), the straight wave guide (1) are located between this two phonon crystal waveguides (2), should
Two sides of straight wave guide (1) respectively with this two phonon crystal waveguides (2) close to；The phonon source (4) is located at the straight wave
The one end of (1) is led, for providing phonon to the straight wave guide (1)；The phonon crystal waveguide (2) will be then for that will meet expected frequence
It is required that phonon be limited in the straight wave guide (1)；
In addition, the substrate (7) is silicon materials, the straight wave guide (1) is germanium material or silicon materials.
2. as described in claim 1 based on the laser light source of acousto-optic interaction, which is characterized in that any one phonon is brilliant
Bulk wave leads the cylindrical air pore structure that (2) have the arrangement of periodic cellular shape；
When the straight wave guide (1) is germanium material, described its phonon crystal lattice constant of phonon crystal waveguide (2) is 1.8 nanometers
~2.4 nanometers, the ratio between the radius of cylindrical air pore structure and lattice constant are 0.22~0.27；
When the straight wave guide (1) is silicon materials, described its phonon crystal lattice constant of phonon crystal waveguide (2) is 0.8 nanometer
~1.0 nanometers, the ratio between the radius of cylindrical air pore structure and lattice constant are 0.22~0.27.
3. as described in claim 1 based on the laser light source of acousto-optic interaction, which is characterized in that the two of the straight wave guide (1)
A end face is perpendicular with the extending direction of the straight wave guide (1).
4. as described in claim 1 based on the laser light source of acousto-optic interaction, which is characterized in that the two of the straight wave guide (1)
Laser resonator is constituted between a end face, the two end faces are cleavage surface or are to be capable of reflecting light field through what over etching was formed
Waveguide optical grating.
5. as described in claim 1 based on the laser light source of acousto-optic interaction, which is characterized in that the cross of the straight wave guide (1)
Cross-sectional width is 400 nanometers~800 nanometers, is highly 200 nanometers~400 nanometers.
6. as described in claim 1 based on the laser light source of acousto-optic interaction, which is characterized in that the straight wave guide (1) is hanging
It is set on the substrate (7)；Preferably, the straight wave guide (1) is vacantly set by first support (5) and second support (6)
It is placed on the substrate (7), the first support (5) and the second support (6) do not connect directly with the straight wave guide (1)
Touching, but by being contacted respectively with two phonon crystal waveguides (2), the phonon crystal waveguide (2) is thus supported, and make described
Straight wave guide (1) is hanging relative to the substrate (7).
7. as claimed in claim 6 based on the laser light source of acousto-optic interaction, which is characterized in that the first support (5) and
The second support (6) is silicon materials；Preferably, the straight wave guide (1) is germanium material, and on the straight wave guide (1)
It is additionally provided with slit (3), the slit (3) is preferably disposed on the inside of the two sides of the straight wave guide (1), for providing corrosive agent
Channel；The corrosive agent is only used for corrosion silicon materials and forms hollow structure to be correspondingly formed the first support (5) and described
Second support (6).
8. as described in claim 1 based on the laser light source of acousto-optic interaction, which is characterized in that when the straight wave guide (1) is
When germanium material, the frequency for the phonon that the phonon source (4) provides is 1.90THz~1.95THz；
When the straight wave guide (1) is silicon materials, the frequency for the phonon that the phonon source (4) provides be 4.30THz~
4.40THz。
9. as described in claim 1 based on the laser light source of acousto-optic interaction, which is characterized in that the phonon crystal waveguide
(2) refractive index of material used by is less than the refractive index of the straight wave guide (1) used material.
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|---|---|---|---|---|
| CN110261957A (en) * | 2019-06-25 | 2019-09-20 | 南京航空航天大学 | A kind of micro-nano structure on piece optoacoustic waveguide of high backward SBS gain |
| CN110261957B (en) * | 2019-06-25 | 2020-03-06 | 南京航空航天大学 | High-backward stimulated Brillouin scattering gain micro-nano structure on-chip photoacoustic waveguide |
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