CN110246908A - Antireflective film, production method and lamination solar cell are converted under a kind of spectrum - Google Patents
Antireflective film, production method and lamination solar cell are converted under a kind of spectrum Download PDFInfo
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- 238000001228 spectrum Methods 0.000 title claims abstract description 98
- 230000003667 anti-reflective effect Effects 0.000 title claims abstract description 61
- 238000003475 lamination Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 120
- 230000007704 transition Effects 0.000 claims abstract description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 239000011159 matrix material Substances 0.000 claims abstract description 14
- 239000000975 dye Substances 0.000 claims description 31
- 239000007788 liquid Substances 0.000 claims description 20
- 239000002096 quantum dot Substances 0.000 claims description 11
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 9
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 9
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 9
- 238000000227 grinding Methods 0.000 claims description 8
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 229920000098 polyolefin Polymers 0.000 claims description 6
- 238000007711 solidification Methods 0.000 claims description 6
- 230000008023 solidification Effects 0.000 claims description 6
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 5
- -1 tungstates Chemical compound 0.000 claims description 5
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 4
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- LIQLLTGUOSHGKY-UHFFFAOYSA-N [B].[F] Chemical compound [B].[F] LIQLLTGUOSHGKY-UHFFFAOYSA-N 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 4
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N benzo-alpha-pyrone Natural products C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 claims description 4
- 235000001671 coumarin Nutrition 0.000 claims description 4
- 150000004775 coumarins Chemical class 0.000 claims description 4
- 239000007850 fluorescent dye Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 4
- 239000010452 phosphate Substances 0.000 claims description 4
- 150000002910 rare earth metals Chemical class 0.000 claims description 4
- 235000021419 vinegar Nutrition 0.000 claims description 4
- 239000000052 vinegar Substances 0.000 claims description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 3
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 3
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 3
- 238000005054 agglomeration Methods 0.000 claims description 3
- 230000002776 aggregation Effects 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 claims 2
- 238000007334 copolymerization reaction Methods 0.000 claims 1
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 230000004044 response Effects 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052788 barium Inorganic materials 0.000 description 6
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 6
- 229910052917 strontium silicate Inorganic materials 0.000 description 6
- QSQXISIULMTHLV-UHFFFAOYSA-N strontium;dioxido(oxo)silane Chemical compound [Sr+2].[O-][Si]([O-])=O QSQXISIULMTHLV-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 3
- 150000001716 carbazoles Chemical class 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 210000004276 hyalin Anatomy 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Luminescent Compositions (AREA)
Abstract
The invention discloses antireflective film, production method and lamination solar cell is converted under a kind of spectrum, it includes: host material layer that antireflective film is wherein converted under the spectrum, and the host material layer is transparent matrix material；Light flannelette layer is fallen into, the upper end of the host material layer is arranged in the sunken light flannelette layer；Transition material under spectrum, transition material is uniformly distributed under the spectrum and converts in antireflective film under the spectrum；Wherein, the mass ratio that transition material accounts for the transparent matrix material under the spectrum is 0.001-30%, and the thickness of the sunken light flannelette layer is within the scope of 0.01-20mm.Antireflective film is converted under spectrum provided by the invention has conversion function under excellent sunken optical property, high-energy photon, and has with flexibility well, can be effectively applied in various types of lamination solar cells.Ultraviolet stability and ultraviolet response performance are promoted in perovskite silicon lamination solar cell also fairly obvious.
Description
Technical field
The present invention relates under technical field of solar batteries more particularly to a kind of spectrum convert antireflective film, production method and
Lamination solar cell.
Background technique
Photovoltaic energy is a kind of green energy resource, it does not consume fuel, does not discharge exhaust gas, without mechanical component, and
Securely and reliably, thus photovoltaic energy be always field of new energy technologies development center of gravity.
Core of the solar battery as photovoltaic energy improves efficiency a master for reducing that cost is solar battery research
Want direction.Currently, improving an effective technology path of existing silicon unijunction solar cell efficiency as using laminate solar again
Battery.Perovskite/crystal silicon lamination solar cell becomes lamination too since its preparation process is simple, high-efficient, low in cost
A hot spot in positive energy battery research.
Perovskite/crystal silicon lamination solar cell device there are ultraviolet stabilities it is poor, temperature and humidity stability is poor the defects of, this
A little defective effects perovskite/crystal silicon lamination solar cell commercial applications prospects.
How to improve perovskite/crystal silicon lamination solar cell ultraviolet stability and efficiency is that this field is urgently to be resolved
Problem.
Summary of the invention
The present invention provides antireflective film, production method and lamination solar cell are converted under a kind of spectrum, it is intended to improve calcium
Titanium ore/crystal silicon lamination solar cell ultraviolet stability and efficiency.
According to the embodiment of the present application in a first aspect, providing a kind of spectrum under convert antireflective film, be used for solar battery,
It include: host material layer, the host material layer is transparent matrix material；
Light flannelette layer is fallen into, the upper end of the host material layer is arranged in the sunken light flannelette layer；
Transition material under spectrum, transition material is uniformly distributed under the spectrum and converts in antireflective film under the spectrum；
Wherein, the mass ratio that transition material accounts for the anti-reflection membrane matrix under the spectrum is 0.001-30%, described to fall into
The thickness of light flannelette layer is within the scope of 0.01-20mm.
It is converted in antireflective film under spectrum of the invention, the host material layer includes vinegar copolymer, polyvinyl alcohol contracting fourth
At least one of aldehyde, dimethyl silicone polymer and polyolefin.
It is converted in antireflective film under spectrum of the invention, the shape of the sunken light flannelette includes positive pyramid, the golden word that falls
At least one of tower-shaped, random trap shape, petal surface shape and leaf surface shape.
It is converted in antireflective film under spectrum of the invention, transition material is solid or liquid under the spectrum；And/or
The absorbing wavelength of the lower transition material is in 200-500nm, and the launch wavelength of the lower transition material is in 400-
Within the scope of 1200nm；
When transition material is solid under the spectrum, the particle size of the solid is within the scope of 1nm-1mm.
Under spectrum of the invention convert antireflective film in, under the spectrum transition material include rear-earth-doped luminous material,
At least one of vanadate self-luminescent material, tungstates self-luminescent material, quantum dot light emitting material and organic dyestuff.
It is converted in antireflective film under spectrum of the invention, transition material includes rear-earth-doped luminous material under the spectrum
When,
The rear-earth-doped luminous material include silicate, borate, tungstates, vanadate, chloro-aluminate, nitride,
At least one of nitrogen oxides and phosphate；
The rare earth dopant of the rear-earth-doped luminous material includes Eu2+、Eu3+、Ce3+、Tb3+、Sm3+、Dy3+、Po3+、Pr3 +、Ho3+At least one of rare earth element.
It is converted in antireflective film under spectrum of the invention, transition material includes quantum dot light emitting material under the spectrum
When,
The quantum dot light emitting material includes PbS, PbSe, ZnO, CsPbI3、CsPbBr3、ZnS、CuGaS2/ZnS、
CsPbCl1.5Br1.5:Yb3+,Ce3+And CdxZn1-xAt least one of S/ZnS material.
It is converted in antireflective film under spectrum of the invention, when transition material includes organic dyestuff under the spectrum,
The organic dyestuff include dye stuff of rhodamine kinds, fluorine boron fluorescent dye, Coumarins dyestuff, triphen amine dyestuff,
At least one of carbazoles dyestuff and premetallized dye.
According to the second aspect of the embodiment of the present application, the production method that antireflective film is converted under a kind of spectrum is provided, comprising:
Transition material under spectrum and curing agent are subjected to liquid mixing as matrix using the mass ratio of 10:1 and weighed；
Transition material under spectrum is mixed in load weighted liquid, is uniformly mixed；
Mixed liquid is poured into grinding tool, prepares and falls into light flannelette；
Stand solidification.
According to the third aspect of the embodiment of the present application, a kind of lamination solar cell is provided, comprising:
Bottom battery layers, the bottom battery layers are using the homogeneity agglomeration silicon solar battery based on Al-BSF or based on PERC；
Battery layers are pushed up, the top battery is the top battery using transparent perovskite battery as lamination；
Tunnel layer, the tunnel layer connect the bottom battery and the top battery；
Antireflective film is converted under above-mentioned spectrum, set on the top of the top battery.
Technical solution provided by the embodiments of the present application can include the following benefits: the application devises under a kind of spectrum
It converts antireflective film, production method and using the lamination solar cell for converting antireflective film under the spectrum, converts anti-reflection under spectrum
Film, which is equipped with, falls into the good sunken light flannelette layer of light effect, and transition material under spectrum is uniformly distributed under spectrum and converts antireflective film
Interior, it is 0.001-30% that transition material, which accounts for the mass ratio of transparent matrix material, under spectrum, falls into the thickness of light flannelette layer in 0.01-
Within the scope of 20mm.Antireflective film is converted under the spectrum has conversion function under excellent sunken optical property and high-energy photon, and has
It is preferable flexible.It is clearly demarcated that ten are promoted to ultraviolet stability and ultraviolet response performance in perovskite silicon lamination solar cell
It is aobvious.
Detailed description of the invention
Technical solution in order to illustrate the embodiments of the present invention more clearly, below will be to needed in embodiment description
Attached drawing is briefly described, it should be apparent that, drawings in the following description are some embodiments of the invention, general for this field
For logical technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.
Fig. 1 be the embodiment of the present invention spectrum under convert antireflective film diagrammatic cross-section；
Fig. 2 is the lamination solar cell diagrammatic cross-section of the embodiment of the present invention；
Fig. 3 be the embodiment of the present invention spectrum under convert antireflective film scanning tunnelling microscope (SEM) surface topography map；
Fig. 4 is the IV the performance test results figure of the embodiment of the present invention；
Fig. 5 is response test figure of the lamination solar cell to ultraviolet and infrared ray of the embodiment of the present invention.
Label declaration:
10, antireflective film is converted under spectrum；11, host material layer；12, light flannelette layer is fallen into；13, transition material under spectrum；20,
Push up battery layers；30, tunnel layer；40, bottom battery layers.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are some of the embodiments of the present invention, instead of all the embodiments.Based on this hair
Embodiment in bright, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
It is also understood that mesh of the term used in this description of the invention merely for the sake of description specific embodiment
And be not intended to limit the present invention.As description of the invention and it is used in the attached claims, unless on
Other situations are hereafter clearly indicated, otherwise " one " of singular, "one" and "the" are intended to include plural form.
It will be further appreciated that the term "and/or" used in description of the invention and the appended claims is
Refer to any combination and all possible combinations of one or more of associated item listed, and including these combinations.
It please refers to shown in Fig. 1 and Fig. 2, the invention discloses antireflective film 10 is converted under a kind of spectrum, converts and subtract under the spectrum
Anti- film 10 is in lamination solar cell.Lamination sun energization pond successively includes spectrum conversion antireflective film 10, top from top to bottom
Battery layers 20, tunnel layer 30 and bottom battery layers 40, tunnel layer 30 is for connecting bottom battery layers 40 and top battery layers 20.
Specifically, lamination solar cell can be silicon solar cell, polysilicon solar cell, CIGS, CZTS, calcium
The unijunction solar cells such as titanium ore, cadmium telluride, GaAs, organic or dye sensitization；Or it is applied to perovskite/silicon laminate solar
Battery, III-V/ silicon lamination solar cell, perovskite/CIGS lamination solar cell, perovskite/perovskite laminate solar
Battery, perovskite/perovskite/silicon lamination etc. ties lamination solar cell.It will can effectively be folded due to converting film under spectrum
Layer solar cell responds weaker light and be converted in ultraviolet portion responds stronger light in visible light part, thus lamination too
Positive energy battery top, which is directly sticked, converts antireflective film under the spectrum in the application, and the efficiency of lamination solar cell can be improved,
Increase the ultraviolet stability of lamination solar cell.
In an alternative embodiment, the bottom battery layers of lamination solar cell are used based on Al-BSF or based on PERC's
Homogeneity agglomeration silicon solar battery；The top battery layers of lamination solar cell use transparent perovskite battery, bottom battery layers and top electricity
It is attached between the layer of pond by tunnel layer.
Antireflective film is converted referring to shown in Fig. 2, under spectrum to include host material layer 11, fall under light flannelette layer 12 and spectrum and convert
Material 13, host material layer 11 are transparent matrix material；Fall into the upper end that light flannelette layer 12 is set to host material layer；It is converted under spectrum
Material 13 is uniformly distributed under spectrum and converts in antireflective film 10, that is, transition material 13 is uniformly distributed in host material under spectrum
Inside layer 11 and sunken light flannelette layer 12.The mass ratio that transition material 12 accounts for transparent matrix material under spectrum focuses on 0.001-30% model
In enclosing, the thickness of light flannelette layer 12 is fallen within the scope of 0.01-20mm.Due to converting lower turn of antireflective film spectrum under the spectrum of the application
Change film can effectively by lamination solar cell ultraviolet portion respond weaker light be converted to visible light part response compared with
Strong light, therefore the efficiency of solar battery can be improved, and increase the ultraviolet stability of solar battery.
In some optional embodiments, host material layer 11 include vinegar copolymer (EVA), polyvinyl butyral (PVB),
At least one of dimethyl silicone polymer (PDMS) and polyolefin (PO).Host material layer can choose vinegar copolymer (EVA),
Any one of polyvinyl butyral (PVB), dimethyl silicone polymer (PDMS) and polyolefin (PO), can also select wherein
The hyaline layer that collectively constitutes of multiple combinations, so that solar battery absorbs sunlight, sent out for penetrating sunlight
Electricity.
In some optional embodiments, transition material 13 can use solid under spectrum, can also use liquid.Under spectrum
The absorbing wavelength of transition material selects in 200-500nm, and the launch wavelength of transition material is selected in 400-1200nm under spectrum
Material in range.If transition material selects solid under spectrum, the particle size of transition material exists under the spectrum of solid
Within the scope of 1nm-1mm.
In some optional embodiments, transition material 13 includes rear-earth-doped luminous material, vanadate self-luminous under spectrum
At least one of material, tungstates self-luminescent material, quantum dot light emitting material and organic dyestuff.Spectroscopic material can be rare earth
Appointing in doped luminescent material, vanadate self-luminescent material, tungstates self-luminescent material, quantum dot light emitting material and organic dyestuff
It anticipates one kind, or the wherein combination of any multiple material, does not do specific limitation herein.
In an alternative embodiment, when transition material 13 includes rear-earth-doped luminous material under spectrum, this is rear-earth-doped
Luminescent material includes in silicate, borate, tungstates, vanadate, chloro-aluminate, nitride, nitrogen oxides and phosphate
It is at least one.Rear-earth-doped luminous material can choose silicate, borate, tungstates, vanadate, chloro-aluminate, nitride,
Any one in nitrogen oxides and phosphate, or any a variety of combination.Rear-earth-doped luminous material it is rear-earth-doped
Agent includes Eu2+、Eu3+、Ce3+、Tb3+、Sm3+、Dy3+、Po3+、Pr3+、Ho3+At least one of rare earth element.It is rear-earth-doped to shine
The rare earth dopant of material can be Eu2+、Eu3+、Ce3+、Tb3+、Sm3+、Dy3+、Po3+、Pr3+、Ho3+It is any in rare earth element
One kind, or the combination of any a variety of rare earth elements.
In an alternative embodiment, when transition material 13 includes quantum dot light emitting material under spectrum, quantum dot light emitting material
Material includes PbS, PbSe, ZnO, CsPbI3、CsPbBr3、ZnS、CuGaS2/ZnS、CsPbCl1.5Br1.5:Yb3+,Ce3+And CdxZn1- xAt least one of S/ZnS material.Quantum dot light emitting material can choose PbS, PbSe, ZnO, CsPbI3、CsPbBr3、ZnS、
CuGaS2/ZnS、CsPbCl1.5Br1.5:Yb3+,Ce3+And CdxZn1-xAny one in S/ZnS material, or it is any a variety of
The combination of material.
In an alternative embodiment, when transition material 13 includes organic dyestuff under spectrum, which includes Luo Dan
In bright class dyestuff, fluorine boron fluorescent dye, Coumarins dyestuff, triphen amine dyestuff, carbazoles dyestuff and premetallized dye
It is at least one.Organic dyestuff can choose dye stuff of rhodamine kinds, fluorine boron fluorescent dye, Coumarins dyestuff, triphen amine dyestuff,
Any one in carbazoles dyestuff and premetallized dye, or any a variety of combination.
Referring to figure 2. and shown in Fig. 3, in some embodiments, the shape for falling into light flannelette layer 12 can use positive pyramid
Shape reduces the reflectivity of battery surface, in the surface area for increasing solar battery, increases luminous flux.In some implementations
The shape that light flannelette is fallen into example may be appointing in reverse pyramid, random trap shape, petal surface shape and leaf surface shape
Any a variety of combinations of one kind of anticipating or these shapes.The shape for falling into light flannelette in another embodiment can also use it
Its irregular shape.
Production method the present invention also provides antireflective film is converted under the spectrum.The specific steps of which are as follows:
Host material and curing agent are subjected to liquid mixing as matrix using the mass ratio of 10:1 and weighed；
Transition material under spectrum is mixed in load weighted liquid, is uniformly mixed；
Mixed liquid is poured into grinding tool, prepares and falls into light flannelette；
Stand solidification.
In an alternative embodiment, host material uses dimethyl silicone polymer (PDMS), and transition material is selected under spectrum
Adulterate Eu2+Strontium silicate barium under transition material.
Specifically, the making step of conversion antireflective film includes: under spectrum in the present embodiment
First, dimethyl silicone polymer (PDMS) and curing agent are subjected to liquid using the mass ratio of 10:1 and mixed as matrix
Material simultaneously weighs,
Second, transition material under strontium silicate barium is mixed into load weighted dimethyl silicone polymer (PDMS) mixing liquid, into
Row is uniform to be mixed.Preferred mixing quality score is 0.3-1.0%；
Third is blended with Eu2+Strontium silicate barium under turn the PDMS liquid of material and pour into the silicon with inverted pyramid flannelette
Flannelette image copying is carried out in piece grinding tool, and is accurately controlled and is poured into amount of liquid to control the thickness of antireflective film, preferred thickness
For 0.2-0.5mm.
4th, it will be put into dimethyl silicone polymer (PDMS) the solution left standstill about 24- in inverted pyramid flannelette grinding tool
After 48h solidification, removes and solidify antireflective film the antireflective film with lower conversion function can be obtained.
The surface topography of the scanning tunnelling microscope (SEM) of antireflective film is converted under spectrum of the invention as shown in Figure 3, it can be with
See having well-regulated pyramid by the antireflective film for carrying out flannelette image copying in the silicon wafer grinding tool with inverted pyramid flannelette
Fall into light flannelette.
In the present embodiment, bottom battery layers use the n-type silicon solar battery based on PERC structure, which throws
Light, and the pn-junction that there is p+ to be located at top, 3 μm of junction depth；Silicon wafer front surface grows the silica of about 1.5nm as tunnel layer,
Top battery of the transparent perovskite battery as lamination is prepared,
Specifically, top battery way is as follows:
1.SnO2Obtain intermediate tunnel layer；
2. preparing FA with one-step methodxMA1-xPbI3-yBryCalcium titanium ore bed；
3. preparing Spiro-OMeTAD hole transmission layer using spin-coating method, MoO is deposited3Afterwards, top layer preparation is based on the saturating of ITO
Bright battery simultaneously prepares metal grid lines.
Antireflective film made of the present embodiment is directly affixed on the surface of solar battery both available laminate solar electricity
Pond.Referring to shown in Fig. 4, by IV performance test, which obtains opening for 1.73V
Road voltage, 16.5mA/cm2Short-circuit current density, 0.81 fill factor and 23.1% photoelectric conversion efficiency.Referring to figure
Shown in 5, it is provided with after anti-reflection layer in perovskite and silicon solar cell, the response of the solar battery is in ultraviolet 300-
The response of 400nm and visible light and infrared 400-1100nm has increase, shows the compound action of lower conversion and antireflective film,
Shorted devices electric current relative to no patch antireflective film improves 2.4mA/cm2, relative to the lower conversion material of only antireflective film
The lamination solar cell of material, short circuit power also improve 0.3mA/cm2.Therefore the antireflective film can effectively improve perovskite
The sunken light ability and ultraviolet responding ability of silicon lamination solar cell, improve the commercial applications prospect of such battery.
In another alternative embodiment, bottom battery layers push up battery layers also using the n silicon based on PERC structure as bottom battery
Using based on MAPbI3Transparent perovskite battery, tunnel layer is ultra-thin silica, and transition material selects doping Eu under spectrum2+
Strontium silicate barium under transition material, fall into light flannelette be the sunken light flannelette with roseleaf, host material use poly dimethyl silicon
Oxygen alkane (PDMS).
Specifically, the making step of conversion antireflective film includes: under the spectrum in the present embodiment
First, dimethyl silicone polymer (PDMS) and curing agent are subjected to liquid using the mass ratio of 10:1 and mixed as matrix
Material simultaneously weighs,
Second, Eu will be adulterated2+Strontium silicate barium under transition material mix load weighted PDMS mixing liquid, carry out uniform
It is mixed, preferred mixing quality score is 0.3-1.0%；
Third is blended with Eu2+Strontium silicate barium under turn the PDMS liquid of material and pour into the grinding tool for posting roseleaf
Flannelette image copying is carried out, and is accurately controlled and pours into amount of liquid to control the thickness of antireflective film, preferably with a thickness of 1-2mm.
4th, after the PMDS solution left standstill about 24-48h being put into the grinding tool with roseleaf solidification, remove solidification
Antireflective film can be obtained and convert antireflective film under the spectrum of the bionical object flannelette having.
In the present embodiment, bottom battery layers use the n-type silicon solar battery based on PERC structure, which throws
Light and the pn-junction for being located at top with p+, 3 μm of junction depth；After the silica of silicon wafer front surface growth about 1.5nm is as tunnel layer
Prepare top battery of the transparent perovskite battery as lamination.
Specifically, top battery way is as follows:
1.SnO2 obtains intermediate tunnel layer；
2. preparing MAPbI with one-step method3Calcium titanium ore bed；
3. preparing Spiro-OMeTAD hole transmission layer using spin-coating method, MoO is deposited3Afterwards, top layer preparation is based on the saturating of ITO
Bright battery simultaneously prepares metal grid lines.
The surface that the antireflective film with lower conversion function of preparation is directly finally affixed on solar battery was both available
Final laminated cell.By IV performance test, which obtains the open circuit of 1.70V
Voltage, 16.4mA/cm2Short-circuit current density, 0.78 fill factor and 21.7% photoelectric conversion efficiency.Thus data
It can show that the antireflective film can effectively improve the sunken light ability and ultraviolet responding ability of perovskite silicon lamination solar cell,
Improve the commercial applications prospect of such battery.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can readily occur in various equivalent modifications or replace
It changes, these modifications or substitutions should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with right
It is required that protection scope subject to.
Claims (10)
1. converting antireflective film under a kind of spectrum, it to be used for solar battery characterized by comprising
Host material layer, the host material layer are transparent matrix material；
Light flannelette layer is fallen into, the upper end of the host material layer is arranged in the sunken light flannelette layer；
Transition material under spectrum, transition material is uniformly distributed under the spectrum and converts in antireflective film under the spectrum；
Wherein, the mass ratio that transition material accounts for the transparent matrix material under the spectrum is 0.001-30%, the sunken light
The thickness of flannelette layer is within the scope of 0.01-20mm.
2. converting antireflective film under spectrum according to claim 1, which is characterized in that the host material layer includes vinegar copolymerization
At least one of object, polyvinyl butyral, dimethyl silicone polymer and polyolefin.
3. converting antireflective film under spectrum according to claim 1, which is characterized in that the shape of the sunken light flannelette includes just
At least one of pyramid, reverse pyramid, random trap shape, petal surface shape and leaf surface shape.
4. converting antireflective film under spectrum according to claim 3, which is characterized in that transition material is solid under the spectrum
Or liquid；And/or
The absorbing wavelength of transition material is in 200-500nm under the spectrum, and the launch wavelength of transition material exists under the spectrum
Within the scope of 400-1200nm；
When transition material is solid under the spectrum, the particle size of the solid is within the scope of 1nm-1mm.
5. converting antireflective film under spectrum according to claim 1, which is characterized in that transition material includes dilute under the spectrum
In native doped luminescent material, vanadate self-luminescent material, tungstates self-luminescent material, quantum dot light emitting material and organic dyestuff
It is at least one.
6. converting antireflective film under spectrum according to claim 5, which is characterized in that transition material includes under the spectrum
When rear-earth-doped luminous material,
The rear-earth-doped luminous material includes silicate, borate, tungstates, vanadate, chloro-aluminate, nitride, nitrogen oxygen
At least one of compound and phosphate；
The rare earth dopant of the rear-earth-doped luminous material includes Eu2+、Eu3+、Ce3+、Tb3+、Sm3+、Dy3+、Po3+、Pr3+、Ho3 +At least one of rare earth element.
7. converting antireflective film under spectrum according to claim 5, which is characterized in that transition material includes under the spectrum
When quantum dot light emitting material,
The quantum dot light emitting material includes PbS, PbSe, ZnO, CsPbI3、CsPbBr3、ZnS、CuGaS2/ZnS、
CsPbCl1.5Br1.5:Yb3+,Ce3+And CdxZn1-xAt least one of S/ZnS material.
8. converting antireflective film under spectrum according to claim 5, which is characterized in that transition material includes under the spectrum
When organic dyestuff,
The organic dyestuff includes dye stuff of rhodamine kinds, fluorine boron fluorescent dye, Coumarins dyestuff, triphen amine dyestuff, carbazole
At least one of class dyestuff and premetallized dye.
9. a kind of production method as converted antireflective film under the described in any item spectrum of claim 1-8, which is characterized in that packet
It includes:
Transition material under spectrum and curing agent are subjected to liquid mixing as matrix using the mass ratio of 10:1 and weighed；
Transition material under spectrum is mixed in load weighted liquid, is uniformly mixed；
Mixed liquid is poured into grinding tool, prepares and falls into light flannelette；
Stand solidification.
10. a kind of lamination solar cell characterized by comprising
Bottom battery layers, the bottom battery layers are using the homogeneity agglomeration silicon solar battery based on Al-BSF or based on PERC；
Battery layers are pushed up, the top battery is the top battery using transparent perovskite battery as lamination；
Tunnel layer, the tunnel layer connect the bottom battery layers and the top battery layers；
As converted antireflective film under the described in any item spectrum of claim 1-8, set on the top of the top battery.
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