CN110246784B - Supporting structure and heat treatment device with same - Google Patents
Supporting structure and heat treatment device with same Download PDFInfo
- Publication number
- CN110246784B CN110246784B CN201910531379.1A CN201910531379A CN110246784B CN 110246784 B CN110246784 B CN 110246784B CN 201910531379 A CN201910531379 A CN 201910531379A CN 110246784 B CN110246784 B CN 110246784B
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- silicon wafer
- support
- arc
- supporting seat
- supporting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
Abstract
The invention provides a supporting structure and a heat treatment device with the same. According to the supporting structure, the problems that the silicon wafer is pressed strongly and the silicon wafer slips seriously during the heating of the silicon wafer can be solved, the supporting structure can be used for increasing the contact area between the silicon wafer and the supporting structure, so that the stress of the silicon wafer is uniform and stable, the pressure of the silicon wafer during the heating of the silicon wafer is reduced, the dislocation position is controlled, the slip is reduced, the performance and the product yield of the silicon wafer are improved, and the supporting structure is easy to replace and is easy to damage or deform.
Description
Technical Field
The invention relates to the technical field of silicon wafer manufacturing, in particular to a supporting structure and a heat treatment device with the same.
Background
Crystal defects are generally classified into four categories: point defects, line defects, surface defects and bulk defects, wherein the line defects can be divided into edge dislocations and screw dislocations. The defects of the crystal can be regarded as products of the slippage of the crystal lattice of local crystal lattices along certain atomic planes, the slippage does not penetrate through the whole crystal lattice, the defects of the crystal terminate in the interior of the crystal lattice, and the disordered arrangement of mass points, namely the dislocation, is caused at the boundary of the crystal lattice of the slipped part and the non-slipped part. During the heating of the wafers, thermal gradients may be generated which generate thermal stresses sufficient to cause the different planes within the wafers to slip relative to each other, which may introduce contaminants into the semiconductor wafers and may cause damage to the wafers, resulting in reduced wafer performance and product yield, which may need to be controlled in order to improve wafer performance and product yield, especially as larger and larger wafers are becoming a current trend, larger and larger wafers are going into the production line, the quality of the wafers is increasing with increasing size, and the thermal stresses experienced by the larger and larger wafers during the heat treatment are increasing accordingly.
The existing supporting part is a three-point or four-point supporting frame, and the supporting contact area is small. Nowadays, large-size silicon wafers are a future trend, and when heated, the large-size silicon wafers have more defects such as slippage and the like compared with small-size silicon wafers due to self gravity and thermal stress. On the other hand, the pressure of the silicon wafer is increased when the silicon wafer is subjected to thermal stress, so that the sliding is aggravated, more sliding amount can be caused by using the conventional support frame, the position is not controllable, particularly, the sliding position is deviated to the inside of the silicon wafer, the performance of the silicon wafer and the yield of products are reduced, and the subsequent device manufacturing is influenced. In addition, current support frame is integrative usually, needs the whole change when damage or deformation appear in the use, difficult discovery when deformation appears, easily leads to sliding aggravation.
Disclosure of Invention
In view of this, the invention provides a supporting structure, which is used for solving the problems that a silicon wafer is pressed strongly during the heating period of the silicon wafer, the silicon wafer slides seriously, the existing supporting frame needs to be integrally replaced when being damaged or deformed, the existing supporting frame is not easy to find when being deformed, and the sliding is easy to aggravate.
The invention also provides a heat treatment device.
In order to solve the technical problems, the invention adopts the following technical scheme:
a support structure according to an embodiment of the first aspect of the invention, comprises:
the upper support seat is provided with an annular support surface capable of forming surface contact with the lower surface of the silicon wafer on the upper surface, and the annular support surface is used for supporting the silicon wafer when the silicon wafer is heated;
the lower supporting seat, the upper surface of lower supporting seat be equipped with go up supporting seat assorted recess, go up supporting seat detachably and arrange in the recess just the lateral wall of going up the supporting seat ends the inside wall of recess.
Further, go up the supporting seat and form into the ring, the holding surface is followed the circumference of ring extends, the recess be with go up supporting seat assorted annular groove.
Further, the circular ring becomes a non-closed circular ring.
Further, the supporting surface is formed into a wedge surface or an arc-shaped curved surface matched with the lower surface of the silicon wafer.
Furthermore, go up the supporting seat and include a plurality of arc structures, every the both ends of arc structure respectively rather than adjacent the one end of arc structure can be dismantled and link to each other in order to form the ring.
Further, the lower supporting seat is in a non-closed circular ring shape, and the groove extends along the circumferential direction of the lower supporting seat.
Furthermore, the upper supporting seat comprises a plurality of arc-shaped structures, an arc-shaped surface is formed on the upper surface of each arc-shaped structure, the groove is annular, and the arc-shaped structures are distributed along the circumferential direction of the groove at intervals.
According to a second aspect of the present invention, a heat treatment apparatus includes:
the support structure described in the above embodiments;
the support structure is arranged on the support.
Furthermore, the support comprises a frame rod, a plurality of first clamping portions distributed at intervals along the height direction of the frame rod are arranged on the frame rod, a second clamping portion is arranged at the edge of the lower supporting seat, and the second clamping portion is connected with the first clamping portions.
Further, the heat treatment apparatus further includes: and the heating mechanism is used for heating the silicon wafer on the supporting structure.
Further, the heating mechanism includes a heating lamp.
The technical scheme of the invention has the following beneficial effects:
according to the supporting structure, the problems that the silicon wafer is pressed strongly and the silicon wafer slips seriously during the heating of the silicon wafer can be solved, the supporting structure can be used for increasing the contact area between the silicon wafer and the supporting structure, so that the stress of the silicon wafer is uniform and stable, the pressure born by the silicon wafer during the heating of the silicon wafer is reduced, the dislocation position is controlled, the slip is reduced, the performance and the product yield of the silicon wafer are improved, the upper supporting seat is convenient to replace, and the damage or the deformation of the upper supporting seat is easy to find.
Drawings
FIG. 1 is a schematic view of an upper support base supporting a silicon wafer in a support structure according to an embodiment of the present invention;
FIG. 2 is a schematic view illustrating the thermal bowing of a silicon wafer when the silicon wafer is supported by the support structure of FIG. 1;
FIG. 3 is a schematic view of an upper support base supporting a silicon wafer in a supporting structure according to another embodiment of the present invention;
FIG. 4 is a schematic view illustrating the silicon wafer being heated and bent while the silicon wafer is supported by the supporting structure of FIG. 3;
FIG. 5 is a schematic view of the upper support base of FIG. 1 supporting a silicon wafer;
FIG. 6 is a partial schematic view of the upper support base of FIG. 1 supporting a silicon wafer;
FIG. 7 is a top view of an upper support base of the support structure according to one embodiment of the present invention;
FIG. 8 is a schematic diagram illustrating a possible sliding position of the upper support base in the supporting structure according to the embodiment of the present invention;
FIG. 9 is a schematic view of another structure of an upper support base in the supporting structure according to the embodiment of the present invention;
FIG. 10 is a schematic structural view of a support structure according to an embodiment of the present invention;
FIG. 11 is a cross-sectional view of a support structure of an embodiment of the present invention;
FIG. 12 is a schematic view of a support structure in cooperation with a silicon wafer according to an embodiment of the present invention;
fig. 13 is a schematic structural view of a heat treatment apparatus according to an embodiment of the present invention.
Reference numerals
An upper support base 10; a second engaging portion 11; a lower support base 12; a groove 13;
a hanger bar 20; a first engaging portion 21;
a heating lamp 30;
a silicon wafer 40.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
A support structure according to an embodiment of the present invention will be described first in detail with reference to the accompanying drawings.
As shown in fig. 1 to 13, the support structure of the embodiment of the present invention includes an upper support base 10 and a lower support base 12.
Specifically, an annular support surface capable of making surface contact with the lower surface of the silicon wafer 40 is formed on the upper surface of the upper support 10 to support the silicon wafer when the silicon wafer is heated; the upper surface of the lower supporting seat 12 is provided with a groove 13 matched with the upper supporting seat 10, the upper supporting seat 10 is detachably arranged in the groove 13, and the side wall of the upper supporting seat 10 is stopped against the inner side wall of the groove 13.
That is, the upper surface of the upper supporting seat 10 is formed with an annular supporting surface capable of forming surface contact with the lower surface of the silicon wafer 40, so as to support the silicon wafer 40 when heating the silicon wafer, increase the contact area between the lower surface of the silicon wafer and the supporting surface, reduce the pressure applied to the silicon wafer, reduce the slip of the silicon wafer during the heating process, control the dislocation position, reduce the defects of the silicon wafer, improve the performance and yield of the silicon wafer, make the slip not easily occur inside the silicon wafer, and reduce the influence on the device manufacturing. The upper surface of lower carriage 12 can be equipped with recess 13, recess 13 and last supporting seat 10 phase-match, go up the position of supporting seat 10 with the contact of recess 13 can be circular arc transition surface, recess 13 also can be for the arcwall face with last supporting seat 10 matching, so that go up supporting seat 10 and can arrange in recess 13, go up supporting seat 10 detachably and arrange in recess 13, when damage or deformation appear in the holding surface, can change supporting seat 10, and the lateral wall of going up supporting seat 10 only supports the inside wall of recess 13, the lateral wall of going up supporting seat 10 can laminate only and support the inside wall of recess 13, go up supporting seat 10 just can not cooperate with recess 13 intact when deformation appears in last supporting seat 10, can appear the gap or be difficult to arrange in recess 13, the staff of also being convenient for like this discovers that supporting seat 10 deforms.
In some embodiments of the present invention, the upper supporting seat 10 may be formed as a circular ring, the supporting surface may extend along the circumference of the circular ring, so as to be conveniently matched with a circular silicon wafer, the circular ring saves manufacturing materials and is convenient to process, and the groove 13 is an annular groove matched with the upper supporting seat 10, so as to facilitate the upper supporting seat 10 to be placed in the groove.
Alternatively, as shown in fig. 7, the ring may be formed as a non-closed ring, and the notch position of the ring is used to facilitate the placement and removal of the silicon wafer.
Optionally, as shown in fig. 1, fig. 2, fig. 5, and fig. 6, the supporting surface may be a wedge-shaped surface matched with the lower surface of the silicon wafer 40, and for the case that the lower surface of the silicon wafer 40 is designed with an inclined surface or a chamfer, the lower surface of the silicon wafer 40 can be attached to the wedge-shaped surface, the contact area between the lower surface of the silicon wafer and the supporting structure is increased, the stress on the silicon wafer is uniform and stable, the pressure applied to the silicon wafer is reduced, and the slip of the silicon wafer during the heating process is reduced.
In some embodiments, as shown in fig. 3 and 4, the supporting surface may be formed as an arc-shaped curved surface, and the lower surface of the silicon wafer 40 is designed with an arc-shaped transition surface, which facilitates the contact between the supporting surface and the lower surface of the silicon wafer 40, so that the stress on the silicon wafer is uniform and stable, the contact area is increased, the pressure applied to the silicon wafer 40 is reduced, and the slip of the silicon wafer during being heated is reduced.
In some embodiments of the present invention, as shown in fig. 9, the upper supporting base 10 may include a plurality of arc structures 14, such as four or three, two ends of each arc structure 14 are detachably connected to one end of the adjacent arc structure 14 to form a circular ring, or a non-closed circular ring, such as a non-closed circular ring with a gap formed between three arc structures 14, for facilitating the gripping of the robot arm. One end of each arc-shaped structure 14 can be provided with a first connecting portion, the other end of each arc-shaped structure is provided with a second connecting portion, the first connecting portions can be clamping grooves, the second connecting portions can be buckles, two adjacent arc-shaped structures 14 can be connected together through the buckles and the clamping grooves, and when one arc-shaped structure is damaged or deformed, the two adjacent arc-shaped structures can be directly replaced, so that the structure is simple and convenient to use and the cost is reduced. Optionally, the upper supporting seat may include a plurality of arc structures 14, an upper surface of each arc structure 14 may be formed with an arc surface, the groove 13 is annular, the plurality of arc structures 14 are distributed along the circumferential direction of the groove 13 at intervals, and when a certain arc structure 14 is damaged or deformed, the replacement is facilitated, and the complete replacement is not required.
According to some embodiments of the present invention, as shown in fig. 12, in the using process, a plurality of arc structures 14 may be arranged at intervals along the circumferential direction of the groove, there may be three arc structures 14, and two adjacent arc structures 14 may not be connected to each other, which not only increases the contact area with the silicon wafer, reduces the pressure, but also facilitates replacement, and when a certain part of the structures is damaged or abnormal, the replacement is facilitated, and the cost is reduced without complete replacement; if the damaged part structure is directly dismounted without replacement, the rest arc-shaped structure is used for supporting, and the silicon wafer can be well matched with the support, so that the use is convenient.
In other embodiments of the present invention, the lower support 12 may be a non-closed circular ring, and the groove 13 may extend along the circumferential direction of the lower support 12, so as to facilitate the cooperation between the upper support 10 and the lower support 12, and facilitate the taking and placing of silicon wafers. The bottom or the outside of lower support seat 12 can form into arc transition face, prevents the inconvenience that the edges and corners brought, and the operation of being convenient for is favorable to reducing and slides.
In other embodiments, the upper supporting seat 10 may be formed as a silicon carbide, silicon nitride, silicon oxide, or silicon material, so that the surface is not easily deformed or damaged during heating, and the influence of the material of the upper supporting seat 10 on the silicon wafer during heating the silicon wafer is reduced.
When a silicon wafer is placed on the upper support seat 10 of the invention for heating treatment, the positions on the silicon wafer, which may slide, are shown in fig. 8, the sliding positions may be distributed in the circumferential direction of the silicon wafer, and the sliding positions may be within a prediction range and a controllable range.
According to the supporting structure, the problems that the silicon wafer is pressed strongly and the silicon wafer slips seriously during the silicon wafer is heated can be solved, the contact area between the silicon wafer and the supporting structure can be increased by using the supporting structure, so that the stress of the silicon wafer is uniform and stable, the pressure born by the silicon wafer during the silicon wafer is heated is reduced, the dislocation position is controlled, the slip is reduced, and the performance and the product yield of the silicon wafer are improved; in addition, the sliding position of the silicon wafer after the heat treatment of the existing support frame is unknown, and the effective control cannot be carried out.
The embodiment of the invention also provides a heat treatment device, which comprises the supporting structure and the bracket in the embodiment, wherein the supporting structure is arranged on the bracket, a silicon wafer can be placed on the supporting structure, the lower surface of the silicon wafer is fully contacted with the supporting surface of the upper supporting seat 10, the contact area is increased, the stress of the silicon wafer is uniform and stable, then the silicon wafer is heated, the slippage of the silicon wafer can be reduced, and the defect of the silicon wafer caused by overlarge pressure intensity during heating can be reduced.
In some embodiments, as shown in fig. 13, the support may include a plurality of frame bars 20, the frame bars 20 may include a plurality of frame bars 20, for example, two or three frame bars 20, the frame bars 20 may be provided with a plurality of first clamping portions 21, for example, three frame bars 20, the plurality of first clamping portions 21 may be spaced apart and distributed along a height direction of the frame bars 20, an edge of the lower support base 12 may be provided with a second clamping portion 11, the second clamping portion 11 may be connected with the first clamping portion 21, so that the lower support base 12 may be stably clamped on the frame bars 20 of the support, and the lower support base 12 may be clamped on the first clamping portions 21 at different heights according to actual needs, so as to heat the silicon wafer. The silicon wafers can be placed on the first clamping portions 21 with different heights respectively, and due to the fact that temperature differences possibly exist in the first clamping portions 21 with different heights, the influence on the silicon wafers under the temperature with different heights can be conveniently researched, and meanwhile the efficiency of heating the silicon wafers is improved.
In other embodiments, the heat treatment apparatus may further include: and the heating mechanism is used for heating the silicon wafer on the supporting structure. Alternatively, the heating mechanism may include a heating lamp 30, may include a plurality of heating lamps 30, and the plurality of heating lamps 30 may be evenly distributed around the silicon wafer to uniformly heat the silicon wafer.
According to the heat treatment device, the silicon wafer can be placed on the supporting surface of the upper supporting seat for heating treatment, the slippage of the silicon wafer can be reduced, the defect caused by overlarge pressure intensity on the silicon wafer during heating can be reduced, the silicon wafer can be placed at different heights through the frame rod, and heating can be more uniform through the heating lamp.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in the present application do not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "up", "down", and the like are used only to indicate relative positional relationships, and when the absolute position of the object to be described is changed, the relative positional relationships are changed accordingly.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A support structure, comprising:
the upper support seat is provided with an annular support surface capable of forming surface contact with the lower surface of the silicon wafer on the upper surface, and the annular support surface is used for supporting the silicon wafer when the silicon wafer is heated;
the lower supporting seat, the upper surface of lower supporting seat be equipped with go up supporting seat assorted recess, go up supporting seat detachably and arrange in the recess just the lateral wall of going up the supporting seat ends the inside wall of recess.
2. The support structure of claim 1, wherein the upper support base is formed as a circular ring, the support surface extends along a circumferential direction of the circular ring, and the groove is an annular groove that is matched with the upper support base.
3. The support structure of claim 2, wherein the circular ring is formed as a non-closed circular ring.
4. The support structure of claim 2, wherein the support surface is formed as a wedge surface or an arc-shaped curved surface matching the lower surface of the silicon wafer.
5. The support structure of claim 2, wherein the upper support base comprises a plurality of arc structures, and both ends of each arc structure are detachably connected with one end of the adjacent arc structure to form the circular ring.
6. The support structure of claim 2, wherein the lower support seat is non-closed circular, and the groove extends in a circumferential direction of the lower support seat.
7. The support structure of claim 1, wherein the upper support seat comprises a plurality of arc-shaped structures, an arc-shaped surface is formed on the upper surface of each arc-shaped structure, the groove is annular, and the plurality of arc-shaped structures are distributed at intervals along the circumferential direction of the groove.
8. A thermal processing apparatus comprising:
the support structure of any one of claims 1-7;
the support structure is arranged on the support.
9. The thermal processing device according to claim 8, wherein said frame comprises a frame rod, said frame rod is provided with a plurality of first engaging portions spaced apart from each other along a height direction thereof, and an edge of said lower support base is provided with a second engaging portion connected to said first engaging portion.
10. The thermal processing device of claim 8, further comprising: and the heating mechanism is used for heating the silicon wafer on the supporting structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910531379.1A CN110246784B (en) | 2019-06-19 | 2019-06-19 | Supporting structure and heat treatment device with same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910531379.1A CN110246784B (en) | 2019-06-19 | 2019-06-19 | Supporting structure and heat treatment device with same |
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| CN110246784A CN110246784A (en) | 2019-09-17 |
| CN110246784B true CN110246784B (en) | 2021-05-07 |
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