CN110246784A - A kind of support construction and the annealing device with it - Google Patents
A kind of support construction and the annealing device with it Download PDFInfo
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- CN110246784A CN110246784A CN201910531379.1A CN201910531379A CN110246784A CN 110246784 A CN110246784 A CN 110246784A CN 201910531379 A CN201910531379 A CN 201910531379A CN 110246784 A CN110246784 A CN 110246784A
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- silicon wafer
- support construction
- support seat
- upper support
- support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The present invention provides a kind of support construction and the annealing device with it, and the upper surface of the support construction is formed with the annular support surface that face contact can be formed with the lower surface of silicon wafer, to the supporting silicon chip when heating to silicon wafer.Support construction according to the present invention, it is big to be able to solve pressure suffered by silicon wafer during silicon wafer is heated, silicon wafer slides serious problem, and the contact area of silicon wafer and support construction is capable of increasing using support construction of the invention, so that silicon wafer uniform force is stablized, reduce pressure suffered by silicon wafer during silicon wafer is heated, dislocation positions are controlled, sliding is mitigated, improve silicon wafer performance and product yield, support construction is easily changed, and is easy to find to damage or deform.
Description
Technical field
The present invention relates to silicon wafer manufacturing technology field more particularly to a kind of support construction and with its annealing device.
Background technique
Crystal defect is generally divided into four classes: point defect, line defect, planar defect and volume defect, and line defect can be divided into sword position
Wrong and two kinds of defects of screw dislocation.The defect of crystal can regard sliding of the local lattice along certain atomic plane generation lattice as
Product, sliding are terminated not through entire lattice, crystal defect to intracell, are being slid part and are not being slid part lattice
Boundary cause the entanglement of particle to arrange, that is, described dislocation.Chip may generate hot ladder during being heated
Degree, this thermal gradient can generate the thermal stress for being enough to make that Different Plane slides relative to each other in chip, and sliding may be by pollutant
It introduces semiconductor wafer and may cause wafer damage, cause wafer property and product yield to reduce, in order to improve wafer property
And product yield, sliding are controlled, and become present development trend, increasing silicon wafer especially as big silicon wafer
It will enter in production line, the quality of silicon wafer is also being gradually increased with the increase of size, and during heating treatment, quality is bigger suffered
Therefore thermal stress also increases.
Existing supporting member is 3 points or four-point supporting frame, and support contact area is smaller.Nowadays large-sized silicon wafers have been
Future trend, when heated, when due to by self gravity and thermal stress, large-sized silicon wafers will phase smaller size silicon wafer have
The defects of more slidings.On the other hand, pressure suffered by silicon wafer also will increase when thermally stressed, thus aggravate to slide,
More slippages are not only resulted in using existing support frame, position is also uncontrollable, and especially slip locations are biased to inside silicon wafer,
Cause wafer property and product yield to reduce, subsequent device manufacture is affected.In addition, existing support frame is usually one
Body, occur damaging in use process or when deformation need integral replacing, occur being not easy to find when deformation, easily lead to sliding plus
Weight.
Summary of the invention
In view of this, the present invention provides a kind of support construction, it is big for solving pressure suffered by silicon wafer during silicon wafer is heated,
Silicon wafer sliding is serious, and damaging occurs in existing support frame or when deformation needs integral replacing, occurs being not easy to find when deformation, easily lead to
The problem of sliding aggravates.
The present invention also provides a kind of annealing devices.
In order to solve the above technical problems, the invention adopts the following technical scheme:
The support construction of embodiment according to a first aspect of the present invention, comprising:
Upper support seat, the upper surface of the upper support seat are formed with the annular that face contact can be formed with the lower surface of silicon wafer
Supporting surface, to support the silicon wafer when heating to silicon wafer；
Lower support base, the upper surface of the lower support base are equipped with the groove to match with the upper support seat, the upper branch
Support seat is removably disposed in the groove and the side wall of the upper support seat stops the inner sidewall for supporting the groove.
Further, the upper support seat is formed as annulus, the supporting surface along the annulus circumferentially extending, it is described recessed
Slot is the annular recess to match with the upper support seat.
Further, the circular ring shape becomes non-closed annulus.
Further, the supporting surface is formed as and the matched lozenges in the lower surface of the silicon wafer or arc-shaped curved surface.
Further, the upper support seat includes multiple arcs structure, the both ends of each arcuate structure respectively and with
One end of its adjacent arcuate structure is detachably connected to form the annulus.
Further, the lower support base is non-closed annular shape, and the groove prolongs along the circumferential direction of the lower support base
It stretches.
Further, the upper support seat includes multiple arcs structure, and the upper surface of each arcuate structure is formed with
Arcwall face, the groove are annular shape, circumferentially spaced distribution of multiple arcuate structures along the groove.
The annealing device of embodiment according to a second aspect of the present invention, comprising:
Support construction described in above-described embodiment；
Bracket, the support construction are set on the bracket.
Further, the bracket includes hack lever, and the hack lever is spaced apart distribution along its short transverse equipped with multiple
First clamping portion, the edge of the lower support base are provided with the second clamping portion, second clamping portion and first clamping portion
It is connected.
Further, the annealing device further include: heating mechanism, for heating the silicon wafer in the support construction.
Further, the heating mechanism includes heating lamp.
The advantageous effects of the above technical solutions of the present invention are as follows:
Support construction according to the present invention, is able to solve that pressure suffered by silicon wafer during silicon wafer is heated is big, and silicon wafer sliding is tight
The problem of weight, the contact area of silicon wafer and support construction is capable of increasing using support construction of the invention, so that silicon wafer stress is equal
Even stabilization reduces pressure suffered by silicon wafer during silicon wafer is heated, controls dislocation positions, mitigate sliding, improve silicon wafer performance and production
Product yield, upper support seat are conveniently replaceable, and upper support seat occurs damaging or Yi Faxian when deformation.
Detailed description of the invention
Fig. 1 is the schematic diagram of upper support seat supporting silicon chip in the support construction of one embodiment of the invention；
Silicon wafer heated bending schematic diagram when Fig. 2 is support construction supporting silicon chip in Fig. 1；
Fig. 3 is the schematic diagram of upper support seat supporting silicon chip in the support construction of another embodiment of the present invention；
Silicon wafer heated bending schematic diagram when Fig. 4 is support construction supporting silicon chip in Fig. 3；
Schematic diagram when Fig. 5 is upper support seat supporting silicon chip in Fig. 1；
Partial schematic diagram when Fig. 6 is upper support seat supporting silicon chip in Fig. 1；
Fig. 7 is a top view of upper support seat in the support construction of the embodiment of the present invention；
Fig. 8 is the slip locations schematic diagram that upper support seat is likely to occur in the support construction of the embodiment of the present invention；
Fig. 9 is another structural schematic diagram of upper support seat in the support construction of the embodiment of the present invention；
Figure 10 is a structural schematic diagram of the support construction of the embodiment of the present invention；
Figure 11 is a sectional view of the support construction of the embodiment of the present invention；
Figure 12 is the support construction of the embodiment of the present invention and a schematic diagram of silicon wafer cooperation；
Figure 13 is a structural schematic diagram of the annealing device of the embodiment of the present invention.
Appended drawing reference
Upper support seat 10；Second clamping portion 11；Lower support base 12；Groove 13；
Hack lever 20；First clamping portion 21；
Heating lamp 30；
Silicon wafer 40.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
Attached drawing, the technical solution of the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is this hair
Bright a part of the embodiment, instead of all the embodiments.Based on described the embodiment of the present invention, ordinary skill
Personnel's every other embodiment obtained, shall fall within the protection scope of the present invention.
Support construction according to an embodiment of the present invention is specifically described in conjunction with attached drawing first below.
As shown in figure 1 to figure 13, the support construction of the embodiment of the present invention includes upper support seat 10 and lower support base 12.
Specifically, the upper surface of upper support seat 10 is formed with the annular that can form face contact with the lower surface of silicon wafer 40
Supporting surface, to the supporting silicon chip when being heated to silicon wafer；The upper surface of lower support base 12 is equipped with and 10 phase of upper support seat
The groove 13 matched, upper support seat 10 is removably disposed in groove 13 and the side wall of upper support seat 10 stops the inside for supporting groove 13
Wall.
That is, the upper surface of upper support seat 10 is formed with the annular that can form face contact with the lower surface of silicon wafer 40
Supporting surface increases the contact surface between the lower surface of silicon wafer and supporting surface to the supporting silicon chip when heating to silicon wafer 40
Product reduces pressure suffered by silicon wafer, mitigates the sliding during silicon wafer is heated, controls dislocation positions, reduce Defect, improves
The performance and yield of silicon wafer mitigate the influence manufactured to device so that sliding is less prone to inside silicon wafer.Lower support base 12
Upper surface can be equipped with groove 13, and groove 13 matches with upper support seat 10, the position contacted on upper support seat 10 with groove 13
Can be arc-shaped transitional surface, groove 13 or with the matched arcwall face of upper support seat 10, in order to which upper support seat 10 can
It is placed in groove 13, upper support seat 10 is removably disposed in groove 13, when damaging occurs in supporting surface or when deformation, can replace
Upper support seat 10, and the side wall of upper support seat 10 stops the inner sidewall for supporting groove 13, the side wall of upper support seat 10, which can be bonded, only to be supported
The inner sidewall of groove 13, when deformation occurs in upper support seat 10, upper support seat 10 cannot fully cooperate with groove 13, can go out
Existing gap is difficult to be placed in groove 13, is also convenient for staff in this way and finds 10 deformation of upper support seat.
In some embodiments of the invention, upper support seat 10 can be formed as annulus, and supporting surface can be along the week of annulus
To extension, convenient for cooperating with round silicon wafer, annulus saves manufacture material, and easy to process, groove 13 is and 10 phase of upper support seat
The annular recess matched is placed in groove convenient for upper support seat 10.
Optionally, it as shown in fig. 7, annulus can be formed as non-closed annulus, is placed by the gap position of annulus
Silicon wafer and remove silicon wafer.
Optionally, shown in as shown in Figure 1, Figure 2, Fig. 5, Fig. 6, supporting surface can be formed as and the matched wedge in the lower surface of silicon wafer 40
Shape face, enables to lower surface and the lozenges of silicon wafer 40 at the case where having inclined-plane or chamfering for the lower surface design of silicon wafer 40
Fitting, increases the lower surface of silicon wafer and the contact area of support construction, so that silicon wafer uniform force is stablized, reduces suffered by silicon wafer
Pressure mitigates the sliding during silicon wafer is heated.
In some embodiments, as shown in Figure 3 and Figure 4, supporting surface can be formed as arc-shaped curved surface, the lower surface of silicon wafer 40
When design has arc transiting surface, the contact in face easy to support and the lower surface of silicon wafer 40 increases so that silicon wafer uniform force is stablized
Contact area reduces pressure suffered by silicon wafer 40, mitigates the sliding during silicon wafer is heated.
In some embodiments of the invention, as shown in figure 9, upper support seat 10 may include multiple arcs structure 14, than
Such as four or three, the both ends of each arcuate structure 14 be detachably connected with one end of arcuate structure 14 adjacent thereto respectively with
Annulus is formed, the annulus of non-close can also be formed, for example, being connected to form between three arcuate structures 14 with non-envelope jaggy
The annulus closed, convenient for the clamping of mechanical arm.One end of each arcuate structure 14 can be equipped with first connecting portion, and the other end is equipped with
Second connecting portion, first connecting portion can be card slot, and second connecting portion can be buckle, can will be adjacent by buckle and card slot
Two arcuate structures 14 link together, simple and convenient when an arcuate structure occurs damaging or when deformation can directly be replaced,
Reduce cost.Optionally, upper support seat may include multiple arcs structure 14, and the upper surface of each arcuate structure 14 can be formed
Have an arcwall face, groove 13 is annular shape, multiple arcs structure 14 along groove 13 circumferentially spaced distribution, when some arc knot
Structure 14 occurs damaging or be conveniently replaceable when deforming, and does not need to replace completely.
According to some embodiments of the present invention, as shown in figure 12, in use, multiple arcs structure 14 can be along recessed
The circumferentially spaced setting of slot, arcuate structure 14 can there are three, can be not connected between two neighboring arcuate structure 14, can
Increase the contact area with silicon wafer, reduces pressure, and can be conveniently replaceable, when damaging or being abnormal occur in a certain part-structure,
It is convenient for changing, does not need whole replacements, reduce cost；If be changed without under directly dismantling the part-structure of damage, by surplus
Remaining arcuate structure is supported also can preferably cooperate support with silicon wafer, easy to use.
In other embodiments of the invention, lower support base 12 can be non-closed annular shape, and groove 13 can edge
The circumferentially extending of lower support base 12, convenient for the cooperation between upper support seat 10 and lower support base 12, convenient for the pick-and-place of silicon wafer.Lower branch
The bottom or outside for supportting seat 12 can be formed as arc transiting surface, prevent corner angle bring inconvenient, convenient for operation, are conducive to reduce
Sliding.
In further embodiments, upper support seat 10 can be formed as silicon carbide, silicon nitride, silica or silicon materials part,
Surface is not susceptible to deformation or damage when heating, reduces influence of material when heating silicon wafer because of upper support seat 10 to silicon wafer.
Silicon wafer is placed on upper support seat 10 of the invention when being heated, the position of sliding is likely to occur on silicon wafer
As shown in figure 8, slip locations are likely located at the circumferentially distributed of silicon wafer, slip locations can be in controllable model in estimation range
It encloses, upper support seat 10 through the invention heats silicon wafer, can reduce silicon wafer during silicon wafer is heated and is pressurized
By force, slip locations are controlled, sliding is mitigated.
Support construction according to the present invention, is able to solve that pressure suffered by silicon wafer during silicon wafer is heated is big, and silicon wafer sliding is tight
The problem of weight, the contact area of silicon wafer and support construction is capable of increasing using support construction of the invention, so that silicon wafer stress is equal
Even stabilization reduces pressure suffered by silicon wafer during silicon wafer is heated, controls dislocation positions, mitigate sliding, improve silicon wafer performance and production
Product yield；In addition, the slip locations of silicon wafer are unknowable after existing support frame heat treatment, cannot control effectively, the present invention
In support construction and silicon wafer contact position it is certain, for sliding occur position be it is foreseeable, using silicon wafer progress
Device can evade these positions when manufacturing, improve production efficiency.
The embodiment of the present invention also provides a kind of annealing device, including the support construction and bracket in above-described embodiment, branch
Support structure is located on bracket, silicon wafer can be placed in support construction, so that the branch of the lower surface of silicon wafer and upper support seat 10
Support face comes into full contact with, and increases contact area, so that silicon wafer uniform force is stablized, then heats to silicon wafer, can reduce silicon
The sliding of piece, reduce heating when silicon wafer because suffered pressure it is excessive caused by defect.
In some embodiments, as shown in figure 13, bracket may include hack lever 20, and hack lever 20 may include multiple, such as
It may include two or three, multiple first clamping portions 21 can be equipped on hack lever 20, for example can be three, multiple first cards
Socket part 21 can be spaced apart distribution along the short transverse of hack lever 20, and the second clamping portion has can be set in the edge of lower support base 12
11, the second clamping portion 11 can be connected with the first clamping portion 21, and lower support base 12 is enabled steadily to be connected to the frame of bracket
On bar 20, lower support base 12 can be connected on the first clamping portion 21 of different height according to actual needs, so as to silicon wafer
It is heated.Silicon wafer can also be placed respectively on the first clamping portion 21 of different height, due to the first clamping of different height
There may be temperature differences in portion 21, can be convenient at a temperature of research different height by the way that silicon wafer is placed in different height to silicon
The influence of piece, meanwhile, improve the efficiency of heat treatment silicon wafer.
In further embodiments, annealing device can also include: heating mechanism, for heating the silicon in support construction
Piece.Optionally, heating mechanism may include heating lamp 30, may include multiple heating lamps 30, multiple heating lamps 30 can be uniform
It is distributed in around silicon wafer, to be evenly heated to silicon wafer.
Silicon wafer can be placed on the supporting surface of upper support seat and carry out at heating by annealing device through the invention
Reason, can reduce the sliding of silicon wafer, when reducing heating silicon wafer because suffered pressure it is excessive caused by defect, can will by hack lever
Silicon wafer is placed in different height, enables to heat by heating lamp heating more uniform.
Unless otherwise defined, technical term or scientific term used in the present invention are should be in fields of the present invention
The ordinary meaning that personage with general technical ability is understood." first ", " second " used in the present invention and similar word
It is not offered as any sequence, quantity or importance, and is used only to distinguish different component parts." connection " or " connected "
It is not limited to physics or mechanical connection etc. similar word, but may include electrical connection, either directly
Or it is indirect."upper", "lower", etc. be only used for indicate relative positional relationship, when be described object absolute position change after,
Then the relative positional relationship also correspondingly changes.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, without departing from the principles of the present invention, it can also make several improvements and retouch, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of support construction characterized by comprising
Upper support seat, the upper surface of the upper support seat are formed with the annular brace that face contact can be formed with the lower surface of silicon wafer
Face, to support the silicon wafer when heating to silicon wafer；
Lower support base, the upper surface of the lower support base are equipped with the groove to match with the upper support seat, the upper support seat
It is removably disposed in the groove and the side wall of the upper support seat stops the inner sidewall for supporting the groove.
2. support construction according to claim 1, which is characterized in that the upper support seat is formed as annulus, the support
Along the circumferentially extending of the annulus, the groove is the annular recess to match with the upper support seat in face.
3. support construction according to claim 2, which is characterized in that the circular ring shape becomes non-closed annulus.
4. support construction according to claim 2, which is characterized in that the supporting surface is formed as the following table with the silicon wafer
The matched lozenges in face or arc-shaped curved surface.
5. support construction according to claim 2, which is characterized in that the upper support seat includes multiple arcs structure, often
The one end of the both ends of a arcuate structure respectively with the arcuate structure adjacent thereto is detachably connected to form the circle
Ring.
6. support construction according to claim 2, which is characterized in that the lower support base is non-closed annular shape, institute
Groove is stated along the circumferentially extending of the lower support base.
7. support construction according to claim 1, which is characterized in that the upper support seat includes multiple arcs structure, often
The upper surface of a arcuate structure is formed with arcwall face, and the groove is annular shape, and multiple arcuate structures are along described recessed
The circumferentially spaced distribution of slot.
8. a kind of annealing device, comprising:
Such as support construction of any of claims 1-7；
Bracket, the support construction are set on the bracket.
9. annealing device according to claim 8, which is characterized in that the bracket includes hack lever, is set on the hack lever
There are multiple the first clamping portions that distribution is spaced apart along its short transverse, the edge of the lower support base is provided with the second clamping portion,
Second clamping portion is connected with first clamping portion.
10. annealing device according to claim 8, which is characterized in that further include: heating mechanism, it is described for heating
Silicon wafer in support construction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910531379.1A CN110246784B (en) | 2019-06-19 | 2019-06-19 | Supporting structure and heat treatment device with same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910531379.1A CN110246784B (en) | 2019-06-19 | 2019-06-19 | Supporting structure and heat treatment device with same |
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| CN110246784A true CN110246784A (en) | 2019-09-17 |
| CN110246784B CN110246784B (en) | 2021-05-07 |
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| CN110246784B (en) | 2021-05-07 |
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