CN110244209A - A kind of breakdown detection method based on IGBT unit - Google Patents
A kind of breakdown detection method based on IGBT unit Download PDFInfo
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- CN110244209A CN110244209A CN201910599011.9A CN201910599011A CN110244209A CN 110244209 A CN110244209 A CN 110244209A CN 201910599011 A CN201910599011 A CN 201910599011A CN 110244209 A CN110244209 A CN 110244209A
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- igbt
- breakdown
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/261—Circuits therefor for testing bipolar transistors for measuring break-down voltage or punch through voltage therefor
Abstract
The present invention relates to IGBT to puncture detection technique field, in particular to a kind of breakdown detection method based on IGBT unit, when the output duration of IGBT unit reaches switching time, the output power of current time IGBT unit is judged, only IGBT unit output power meet can carry out breakdown detection condition when, then control IGBT unit by current working condition switch to breakdown detecting state breakdown detection is carried out to IGBT unit；The breakdown detection method of this programme design can be detected to the breakdown situation of the driving of low side and the flash driving of IGBT unit and the driving method without changing IGBT unit, the state being timed by preset switching time switching is only needed to can be detected the breakdown situation of IGBT unit, algorithm is simple, and detectable range is big.
Description
Technical field
The present invention relates to IGBT to puncture detection technique field, in particular to a kind of breakdown detection side based on IGBT unit
Method.
Background technique
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, referred to as IGBT), be by
The compound full-control type voltage driven type power semiconductor of BJT (double pole triode) and MOS (insulating gate type field effect tube) composition
Device has advantage of both the high input impedance of MOSFET and the low conduction voltage drop of GTR concurrently.GTR saturation pressure reduces, and current-carrying is close
Degree is big, but driving current is larger；MOSFET driving power very little, switching speed is fast, but conduction voltage drop is big, and current carrying density is small.
IGBT combines the advantages of both the above device, and driving power is small and saturation pressure reduces.Being highly suitable to be applied for DC voltage is
The fields such as the converter system of 600V or more such as alternating current generator, frequency converter, Switching Power Supply, lighting circuit, Traction Drive.
IGBT during the work time there is a phenomenon where breakdown be it is more typical, cause that IGBT punctures because being known as very much,
Such as: overcurrent, over-voltage, excessively mild short circuit etc. all may cause IGBT and puncture.With the development of semiconductor switch technology, partly
Conductor switching device is widely used in the equipment such as electric welding machine, frequency converter, SVG, flexible DC transmission.Equipment produce,
Debugging, transport, field maintenance or often inevitably semiconductor devices (such as IGBT) damages when reprocessing.It is damaged in device
In the case where bad, once device power is run, easily lead to the straight-through damage of IGBT, will lead to whole equipment when serious completely or portion
Divide demolition.Therefore especially it is necessary to provide a kind of methods that can be used to detect IGBT breakdown.
Summary of the invention
The technical problems to be solved by the present invention are: providing a kind of breakdown detection method based on IGBT unit.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention are as follows:
A kind of breakdown detection method based on IGBT unit, comprising the following steps:
The switching time of the breakdown detection of S1, default IGBT unit；
S2, judge whether the output duration of IGBT unit reaches the switching time；
If the output duration of S3, IGBT unit reaches the switching time, the output of current time IGBT unit is judged
Whether power meets breakdown testing conditions；
If the output power of S4, current time IGBT unit meets breakdown testing conditions, IGBT unit is controlled by current
Working condition switch to breakdown detecting state；
S5, when IGBT unit switch to breakdown detecting state after, judge whether IGBT unit is in breakdown conditions；
If S6, IGBT unit are not in breakdown conditions, IGBT unit is controlled by breakdown detecting state and switches to work
State.
The beneficial effects of the present invention are:
The switching time that this programme is detected by presetting the breakdown of IGBT unit, first judge that the output duration of IGBT unit is
It is no to reach the switching time, when the output duration of IGBT unit reaches switching time, to current time IGBT unit
Output power judged, only when the output power of IGBT unit meets the condition that can carry out breakdown detection, then control
IGBT unit switches to breakdown detecting state by current working condition, is switching to breakdown detecting state, if IGBT is mono-
Member is not in breakdown conditions, then controls IGBT unit by breakdown detecting state and switch to working condition, illustrates to switch at one
IGBT unit is not puncture in time；The breakdown detection method of this programme design drives the low side driving of IGBT unit and flash
Dynamic breakdown situation can detect and without changing the driving method of IGBT unit, it is only necessary to by preset switching time into
The state switching of row timing can be detected the breakdown situation of IGBT unit, and algorithm is simple, and detectable range is big.
Detailed description of the invention
Fig. 1 is a kind of step flow chart of the breakdown detection method based on IGBT unit according to the present invention.
Specific embodiment
To explain the technical content, the achieved purpose and the effect of the present invention in detail, below in conjunction with embodiment and cooperate attached
Figure is explained.
The most critical design of the present invention is: when the output duration of IGBT unit reaches switching time, to current
The moment IGBT output power of unit is judged, the item that can carry out puncturing detection is only met in the output power of IGBT unit
When part, then control IGBT unit by current working condition switch to breakdown detecting state breakdown detection is carried out to IGBT unit.
Fig. 1 is please referred to, technical solution provided by the invention:
A kind of breakdown detection method based on IGBT unit, comprising the following steps:
The switching time of the breakdown detection of S1, default IGBT unit；
S2, judge whether the output duration of IGBT unit reaches the switching time；
If the output duration of S3, IGBT unit reaches the switching time, the output of current time IGBT unit is judged
Whether power meets breakdown testing conditions；
If the output power of S4, current time IGBT unit meets breakdown testing conditions, IGBT unit is controlled by current
Working condition switch to breakdown detecting state；
S5, when IGBT unit switch to breakdown detecting state after, judge whether IGBT unit is in breakdown conditions；
If S6, IGBT unit are not in breakdown conditions, IGBT unit is controlled by breakdown detecting state and switches to work
State.
As can be seen from the above description, the beneficial effects of the present invention are:
The switching time that this programme is detected by presetting the breakdown of IGBT unit, first judge that the output duration of IGBT unit is
It is no to reach the switching time, when the output duration of IGBT unit reaches switching time, to current time IGBT unit
Output power judged, only when the output power of IGBT unit meets the condition that can carry out breakdown detection, then control
IGBT unit switches to breakdown detecting state by current working condition, is switching to breakdown detecting state, if IGBT is mono-
Member is not in breakdown conditions, then controls IGBT unit by breakdown detecting state and switch to working condition, illustrates to switch at one
IGBT unit is not puncture in time；The breakdown detection method of this programme design drives the low side driving of IGBT unit and flash
Dynamic breakdown situation can detect and without changing the driving method of IGBT unit, it is only necessary to by preset switching time into
The state switching of row timing can be detected the breakdown situation of IGBT unit, and algorithm is simple, and detectable range is big.
Further, the breakdown testing conditions be the output power sustainable growth within a preset period of time of IGBT unit or
It is lasting to reduce.
Seen from the above description, the condition of a breakdown detection is set before carrying out breakdown detection, it is only mono- in IGBT
Member meets output power sustainable growth within a preset period of time or persistently reduces the working condition switching at Shi Caicong current time
To breakdown detecting state, the state other than above two is all detected without breakdown, is able to ascend IGBT unit in this way
Puncture detection efficiency.
Further, judge whether IGBT unit is in the judgment method of breakdown conditions in step S5 are as follows:
S51, the driving condition for obtaining IGBT unit；The driving condition includes flash driving and the driving of low side；
S52, judge whether the low side driving of IGBT unit has breakdown；If so, control IGBT unit cut-off, if it is not, then
Enter step S53；
S53, judge whether the flash driving of IGBT unit has breakdown, if so, control IGBT unit cut-off, if it is not, then
It controls IGBT unit unit and working condition is switched to by breakdown detecting state.
Seen from the above description, it first passes through and breakdown judgement is carried out to the low side driving of IGBT unit, if IGBT unit is low
Side driving has breakdown, then directly controls the cut-off of IGBT unit, only when the driving of the low side of IGBT unit is without breakdown just to IGBT
The flash driving of unit carries out breakdown judgement, can save the time of breakdown detection in this way, to improve the rate of breakdown detection.
Further, the IGBT unit includes IGBT1 unit and IGBT2 unit, the IGBT1 unit with it is described
The electrical connection of IGBT2 unit；
Judge the low side driving of IGBT unit in step S52 whether to have the judgment method of breakdown to include: to judge IGBT1 unit
It is low while driving whether have the step of breakdown and judge IGBT2 unit it is low while drive whether have the step of breakdown；
Whether the low side driving for judging IGBT1 unit has the step of breakdown to include:
The low side pipe of control IGBT1 unit and IGBT2 unit is turned off, and controls the flash of IGBT1 unit and IGBT2 unit
Pipe is opened；
The total current value of IGBT unit is acquired for the first time and judges the total current value of first time collected IGBT unit
Whether absolute value is greater than zero；
If so, the flash pipe of control IGBT1 unit is closed；
The total current value of second of collected IGBT unit of total current value and judgement of second of acquisition IGBT unit
Whether absolute value is greater than zero；
If so, control IGBT1 unit and IGBT2 unit are turned off；
Whether the low side driving for judging IGBT2 unit has the step of breakdown to include:
The low side pipe of control IGBT1 unit and IGBT2 unit is turned off, and controls the flash of IGBT1 unit and IGBT2 unit
Pipe is opened；
The total current value of IGBT unit is acquired for the first time and judges the total current value of first time collected IGBT unit
Whether absolute value is greater than zero；
If it is not, the flash pipe for then controlling IGBT1 unit is closed and the flash pipe of IGBT2 unit is opened；
The total current value of second of collected IGBT unit of total current value and judgement of second of acquisition IGBT unit
Whether absolute value is greater than zero；
If so, control IGBT1 unit and IGBT2 unit are turned off.
Seen from the above description, the first judgement to IGBT total current can quickly position whether low side pipe punctures.If
It is, then carries out the breakdown situation of the low side pipe of specific IGBT unit.
Further, the IGBT unit includes IGBT1 unit and IGBT2 unit, the IGBT1 unit with it is described
The electrical connection of IGBT2 unit；
Judge the flash driving of IGBT unit in step S53 whether to have the judgment method of breakdown to include: to judge IGBT1 unit
Flash driving whether have the step of breakdown and judge IGBT2 unit flash drive whether have the step of breakdown；
Whether the flash driving for judging IGBT1 unit has the step of breakdown to include:
The low side pipe of control IGBT1 unit and IGBT2 unit is turned off, and controls the flash of IGBT1 unit and IGBT2 unit
Pipe is opened；
The total current value of IGBT unit is acquired for the first time and judges the total current value of first time collected IGBT unit
Whether absolute value is greater than zero；
If it is not, the low side pipe for then controlling IGBT1 unit and IGBT2 unit is opened, controls IGBT1 unit and IGBT2 is mono-
The flash pipe of member is turned off；
The total current value of second of collected IGBT unit of total current value and judgement of second of acquisition IGBT unit
Whether absolute value is greater than zero；
If so, control IGBT1 unit and IGBT2 unit are turned off；
Whether the flash driving for judging IGBT2 unit has the step of breakdown to include:
The low side pipe of control IGBT1 unit and IGBT2 unit is turned off, and controls the flash of IGBT1 unit and IGBT2 unit
Pipe is opened；
The total current value of IGBT unit is acquired for the first time and judges the total current value of first time collected IGBT unit
Whether absolute value is greater than zero；
If it is not, the low side pipe for then controlling IGBT2 unit is closed；
The total current value of second of collected IGBT unit of total current value and judgement of second of acquisition IGBT unit
Whether absolute value is greater than zero；
If it is not, the flash pipe for then controlling IGBT1 unit is closed and the low side Guan Kaiqi of IGBT2 unit；
Third time acquires the total current value of IGBT unit and judges the total current value of the collected IGBT unit of third time
Whether absolute value is greater than zero；
If so, control IGBT1 unit and IGBT2 unit are turned off.
Seen from the above description, the first judgement to IGBT total current can quickly position whether flash pipe punctures.If
It is, then carries out the breakdown situation of the flash pipe of specific IGBT unit.
Further, further comprising the steps of:
If IGBT unit is in breakdown conditions, controls IGBT unit and end and generate fault message, the failure is believed
Breath feeds back to server.
As can be seen from the above description, when detecting breakdown situation, control IGBT unit ends and generates fault message, by event
Barrier information feeds back to server, and staff can timely receive the abnormal conditions of IGBT unit, avoid equipment because of IGBT
The exception of unit and staff is damaged, to improve the safety that equipment uses.
Further, step S6 further include:
The return step S2 after control IGBT unit is switched to working condition by breakdown detecting state, until detecting IGBT
After unit is in breakdown conditions, control IGBT unit cut-off.
As can be seen from the above description, be the period that a state switches with a switching time,
Further, judge whether the output duration of IGBT unit reaches the judgment method of the switching time are as follows:
Driving IGBT unit enters working condition and starts timing, obtains at the first time；
Judge whether reach the switching time at the first time；
If so, determining that the output duration of IGBT unit reaches the switching time；
If it is not, then determining that the output duration of IGBT unit is not up to the switching time.
Please refer to Fig. 1, the embodiment of the present invention one are as follows:
A kind of breakdown detection method based on IGBT unit, comprising the following steps:
The switching time of the breakdown detection of S1, default IGBT unit；The switching time is some period；
S2, judge whether the output duration of IGBT unit reaches the switching time；Judge the output duration of IGBT unit
Whether the judgment method of the switching time is reached are as follows:
Driving IGBT unit enters working condition and starts timing, obtains at the first time；
Judge whether reach the switching time at the first time；
If so, determining that the output duration of IGBT unit reaches the switching time；
If it is not, then determining that the output duration of IGBT unit is not up to the switching time.
If the output duration of S3, IGBT unit reaches the switching time, the output of current time IGBT unit is judged
Whether power meets breakdown testing conditions；The breakdown testing conditions are that the output power of IGBT unit within a preset period of time is held
It is continuous to increase or persistently reduce.
If the output power of S4, current time IGBT unit meets breakdown testing conditions, IGBT unit is controlled by current
Working condition switch to breakdown detecting state；
S5, when IGBT unit switch to breakdown detecting state after, judge whether IGBT unit is in breakdown conditions；
If S6, IGBT unit are not in breakdown conditions, IGBT unit is controlled by breakdown detecting state and switches to work
State.
Step S6 further include:
The return step S2 after control IGBT unit is switched to working condition by breakdown detecting state, until detecting IGBT
After unit is in breakdown conditions, control IGBT unit cut-off.
If S7, IGBT unit are in breakdown conditions, control IGBT unit and end and generate fault message, by the failure
Information feeds back to server.
The specific embodiment of the breakdown detection method of above-mentioned IGBT unit are as follows:
Be arranged the switching time be 10 seconds, such as IGBT unit start to work time be 9 points, 9: 10 seconds when
Wait, first detect IGBT unit output power in 9 points to 9: 10 seconds of period whether be constantly in it is lasting increase or
Be continue to reduce (such as the output power of IGBT unit is followed successively by 6W, 7W, 8W in 9 points to 9: 10 seconds of period ... or
Person is 8W, 7W, 6W ...), decide that the output power of IGBT unit in 9 points to 9: 10 seconds of period is to meet breakdown inspection
Survey condition, then control IGBT unit by current working condition switch to breakdown detecting state and IGBT unit is hit
Detection is worn, if detecting that IGBT unit does not puncture, then IGBT unit is controlled by breakdown detecting state and switches to working condition,
Whether continue to test IGBT unit has breakdown in next period, with a switching time for a detection cycle, Zhi Daojian
When measuring IGBT unit has breakdown, control IGBT unit stops exporting and generates fault message, and the fault message is anti-
It is fed to server, equipment is repaired by staff.
Judge whether IGBT unit is in the judgment method of breakdown conditions in step S5 are as follows:
S51, the driving condition for obtaining IGBT unit；The driving condition includes flash driving and the driving of low side；
S52, judge whether the low side driving of IGBT unit has breakdown；If so, control IGBT unit cut-off, if it is not, then
Enter step S53；
S53, judge whether the flash driving of IGBT unit has breakdown, if so, control IGBT unit cut-off, if it is not, then
It controls IGBT unit unit and working condition is switched to by breakdown detecting state.
The IGBT unit of this programme includes IGBT1 unit and IGBT2 unit, the IGBT1 unit and the IGBT2 unit
Electrical connection, the case where breakdown if it exists, can be divided into following several breakdown situations:
(1) only IGBT1 unit has breakdown；
(2) only IGBT2 unit has breakdown；
(3) IGBT1 unit and IGBT2 unit have breakdown；
Judge the low side driving of IGBT unit in step S52 whether to have the judgment method of breakdown to include: to judge IGBT1 unit
It is low while driving whether have the step of breakdown and judge IGBT2 unit it is low while drive whether have the step of breakdown；
The judgment method for whether having breakdown for IGBT1 unit and IGBT2 unit includes following several:
1, whether the low side driving for judging IGBT1 unit has the step of breakdown to include:
The low side pipe of control IGBT1 unit and IGBT2 unit is turned off, and controls the flash of IGBT1 unit and IGBT2 unit
Pipe is opened；
The total current value of IGBT unit is acquired for the first time and judges the total current value of first time collected IGBT unit
Whether absolute value is greater than zero；
If so, the flash pipe of control IGBT1 unit is closed；
The total current value of second of collected IGBT unit of total current value and judgement of second of acquisition IGBT unit
Whether absolute value is greater than zero；
If so, control IGBT1 unit and IGBT2 unit are turned off；
At this point, being determined as that the low side pipe of IGBT1 unit has breakdown.
2, whether the low side driving for judging IGBT2 unit has the step of breakdown to include:
The low side pipe of control IGBT1 unit and IGBT2 unit is turned off, and controls the flash of IGBT1 unit and IGBT2 unit
Pipe is opened；
The total current value of IGBT unit is acquired for the first time and judges the total current value of first time collected IGBT unit
Whether absolute value is greater than zero；
If it is not, the flash pipe for then controlling IGBT1 unit is closed and the flash pipe of IGBT2 unit is opened；
The total current value of second of collected IGBT unit of total current value and judgement of second of acquisition IGBT unit
Whether absolute value is greater than zero；
If so, control IGBT1 unit and IGBT2 unit are turned off；
At this point, being determined as that the low side pipe of IGBT2 unit has breakdown.
3, judge the flash driving of IGBT unit in step S53 whether to have the judgment method of breakdown to include: to judge that IGBT1 is mono-
Whether the flash driving of member has the step of breakdown and judges whether the flash driving of IGBT2 unit has the step of breakdown；
Whether the flash driving for judging IGBT1 unit has the step of breakdown to include:
The low side pipe of control IGBT1 unit and IGBT2 unit is turned off, and controls the flash of IGBT1 unit and IGBT2 unit
Pipe is opened；
The total current value of IGBT unit is acquired for the first time and judges the total current value of first time collected IGBT unit
Whether absolute value is greater than zero；
If it is not, the low side pipe for then controlling IGBT1 unit and IGBT2 unit is opened, controls IGBT1 unit and IGBT2 is mono-
The flash pipe of member is turned off；
The total current value of second of collected IGBT unit of total current value and judgement of second of acquisition IGBT unit
Whether absolute value is greater than zero；
If so, control IGBT1 unit and IGBT2 unit are turned off；
At this point, being determined as that the flash pipe of IGBT1 unit has breakdown.
4, whether the flash driving for judging IGBT2 unit has the step of breakdown to include:
The low side pipe of control IGBT1 unit and IGBT2 unit is turned off, and controls the flash of IGBT1 unit and IGBT2 unit
Pipe is opened；
The total current value of IGBT unit is acquired for the first time and judges the total current value of first time collected IGBT unit
Whether absolute value is greater than zero；
If it is not, the low side pipe for then controlling IGBT2 unit is closed；
The total current value of second of collected IGBT unit of total current value and judgement of second of acquisition IGBT unit
Whether absolute value is greater than zero；
If it is not, the flash pipe for then controlling IGBT1 unit is closed and the low side Guan Kaiqi of IGBT2 unit；
Third time acquires the total current value of IGBT unit and judges the total current value of the collected IGBT unit of third time
Whether absolute value is greater than zero；
If so, control IGBT1 unit and IGBT2 unit are turned off.
At this point, being determined as that the flash pipe of IGBT2 unit has breakdown.
IGBT unit further includes IGBT3 unit, IGBT4 unit, IGBT5 unit, IGBT6 unit ... IGBTn unit, if
It is standby can be according to using the size of power suitably to select the number of IGBT unit, IGBT unit can be selected multiple when high-power
IGBT unit, above-mentioned IGBT1 unit it is low while driving and flash driving breakdown detection method and IGBT2 unit it is low while drive
It is mono- that the detection method of dynamic and flash driving breakdown is equally applicable to IGBT3 unit, IGBT4 unit, IGBT5 unit, IGBT6
The breakdown of member ... IGBTn unit detects.
In conclusion a kind of breakdown detection method based on IGBT unit provided by the invention, by presetting IGBT unit
Breakdown detection switching time, first judge whether the output duration of IGBT unit reaches the switching time, in IGBT unit
Output duration when reach switching time, the output power of current time IGBT unit is judged, only in IGBT
When the output power of unit meets the condition that can carry out breakdown detection, then controls IGBT unit and switched to by current working condition
Puncture detecting state, is switching to breakdown detecting state, if IGBT unit is not in breakdown conditions, it is mono- to control IGBT
Member switches to working condition by breakdown detecting state, illustrates that IGBT unit is not puncture within a switching time；This programme
The breakdown detection method of design can detect and without more the breakdown situation of the driving of low side and the flash driving of IGBT unit
Change the driving method of IGBT unit, it is only necessary to which the state switching being timed by preset switching time can be detected IGBT
The breakdown situation of unit, algorithm is simple, and detectable range is big.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalents made by bright specification and accompanying drawing content are applied directly or indirectly in relevant technical field, similarly include
In scope of patent protection of the invention.
Claims (8)
1. a kind of breakdown detection method based on IGBT unit, which comprises the following steps:
The switching time of the breakdown detection of S1, default IGBT unit；
S2, judge whether the output duration of IGBT unit reaches the switching time；
If the output duration of S3, IGBT unit reaches the switching time, the output power of current time IGBT unit is judged
Whether satisfaction punctures testing conditions；
If the output power of S4, current time IGBT unit meets breakdown testing conditions, IGBT unit is controlled by current work
Breakdown detecting state is switched to as state；
S5, when IGBT unit switch to breakdown detecting state after, judge whether IGBT unit is in breakdown conditions；
If S6, IGBT unit are not in breakdown conditions, IGBT unit is controlled by breakdown detecting state and switches to working condition.
2. the breakdown detection method according to claim 1 based on IGBT unit, which is characterized in that the breakdown detector bar
Part is the output power sustainable growth or lasting reduction of IGBT unit within a preset period of time.
3. the breakdown detection method according to claim 1 based on IGBT unit, which is characterized in that judge in step S5
Whether IGBT unit is in the judgment method of breakdown conditions are as follows:
S51, the driving condition for obtaining IGBT unit；The driving condition includes flash driving and the driving of low side；
S52, judge whether the low side driving of IGBT unit has breakdown；If so, control IGBT unit cut-off, if it is not, then entering
Step S53；
S53, judge whether the flash driving of IGBT unit has breakdown, if so, control IGBT unit cut-off, if it is not, then controlling
IGBT unit unit switches to working condition by breakdown detecting state.
4. the breakdown detection method according to claim 3 based on IGBT unit, which is characterized in that the IGBT unit packet
IGBT1 unit and IGBT2 unit are included, the IGBT1 unit is electrically connected with the IGBT2 unit；
Judge the low side driving of IGBT unit in step S52 whether to have the judgment method of breakdown to include: judge IGBT1 unit low
While driving whether have the step of breakdown and judge IGBT2 unit it is low while drive whether have the step of breakdown；
Whether the low side driving for judging IGBT1 unit has the step of breakdown to include:
The low side pipe of control IGBT1 unit and IGBT2 unit is turned off, and controls the flash Guan Jun of IGBT1 unit and IGBT2 unit
It opens；
The total current value of IGBT unit is acquired for the first time and judges the absolute of the total current value of first time collected IGBT unit
Whether value is greater than zero；
If so, the flash pipe of control IGBT1 unit is closed；
The total current value of second of collected IGBT unit of the total current value of acquisition IGBT unit and judgement is absolute for the second time
Whether value is greater than zero；
If so, control IGBT1 unit and IGBT2 unit are turned off；
Whether the low side driving for judging IGBT2 unit has the step of breakdown to include:
The low side pipe of control IGBT1 unit and IGBT2 unit is turned off, and controls the flash Guan Jun of IGBT1 unit and IGBT2 unit
It opens；
The total current value of IGBT unit is acquired for the first time and judges the absolute of the total current value of first time collected IGBT unit
Whether value is greater than zero；
If it is not, the flash pipe for then controlling IGBT1 unit is closed and the flash pipe of IGBT2 unit is opened；
The total current value of second of collected IGBT unit of the total current value of acquisition IGBT unit and judgement is absolute for the second time
Whether value is greater than zero；
If so, control IGBT1 unit and IGBT2 unit are turned off.
5. the breakdown detection method according to claim 3 based on IGBT unit, which is characterized in that the IGBT unit packet
IGBT1 unit and IGBT2 unit are included, the IGBT1 unit is electrically connected with the IGBT2 unit；
Judge the flash driving of IGBT unit in step S53 whether to have the judgment method of breakdown to include: the height for judging IGBT1 unit
Whether side driving has the step of breakdown and judges whether the flash driving of IGBT2 unit has the step of breakdown；
Whether the flash driving for judging IGBT1 unit has the step of breakdown to include:
The low side pipe of control IGBT1 unit and IGBT2 unit is turned off, and controls the flash Guan Jun of IGBT1 unit and IGBT2 unit
It opens；
The total current value of IGBT unit is acquired for the first time and judges the absolute of the total current value of first time collected IGBT unit
Whether value is greater than zero；
If it is not, the low side pipe for then controlling IGBT1 unit and IGBT2 unit is opened, IGBT1 unit and IGBT2 unit are controlled
Flash pipe is turned off；
The total current value of second of collected IGBT unit of the total current value of acquisition IGBT unit and judgement is absolute for the second time
Whether value is greater than zero；
If so, control IGBT1 unit and IGBT2 unit are turned off；
Whether the flash driving for judging IGBT2 unit has the step of breakdown to include:
The low side pipe of control IGBT1 unit and IGBT2 unit is turned off, and controls the flash Guan Jun of IGBT1 unit and IGBT2 unit
It opens；
The total current value of IGBT unit is acquired for the first time and judges the absolute of the total current value of first time collected IGBT unit
Whether value is greater than zero；
If it is not, the low side pipe for then controlling IGBT2 unit is closed；
The total current value of second of collected IGBT unit of the total current value of acquisition IGBT unit and judgement is absolute for the second time
Whether value is greater than zero；
If it is not, the flash pipe for then controlling IGBT1 unit is closed and the low side Guan Kaiqi of IGBT2 unit；
Third time acquires the total current value of IGBT unit and judges the absolute of the total current value of the collected IGBT unit of third time
Whether value is greater than zero；
If so, control IGBT1 unit and IGBT2 unit are turned off.
6. the breakdown detection method according to claim 1 based on IGBT unit, which is characterized in that further include following step
It is rapid:
If IGBT unit is in breakdown conditions, controls IGBT unit and end and generate fault message, the fault message is anti-
It is fed to server.
7. the breakdown detection method according to claim 1 based on IGBT unit, which is characterized in that step S6 further include:
The return step S2 after control IGBT unit is switched to working condition by breakdown detecting state, until detecting IGBT unit
After breakdown conditions, control IGBT unit cut-off.
8. the breakdown detection method according to claim 1 based on IGBT unit, which is characterized in that judge IGBT unit
Whether output duration reaches the judgment method of the switching time are as follows:
Driving IGBT unit enters working condition and starts timing, obtains at the first time；
Judge whether reach the switching time at the first time；
If so, determining that the output duration of IGBT unit reaches the switching time；
If it is not, then determining that the output duration of IGBT unit is not up to the switching time.
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