CN110244208B - Breakdown detection method for IGBT unit - Google Patents
Breakdown detection method for IGBT unit Download PDFInfo
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- CN110244208B CN110244208B CN201910598767.1A CN201910598767A CN110244208B CN 110244208 B CN110244208 B CN 110244208B CN 201910598767 A CN201910598767 A CN 201910598767A CN 110244208 B CN110244208 B CN 110244208B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/261—Circuits therefor for testing bipolar transistors for measuring break-down voltage or punch through voltage therefor
Abstract
The invention relates to the technical field of IGBT breakdown detection, in particular to a breakdown detection method of an IGBT unit, which judges whether the IGBT unit is broken down or not by collecting current values output by the IGBT unit in three continuous periods and in the last 10% period of each period and judging whether the collected current values are zero or not, can quickly detect the breakdown condition of high-side drive of the IGBT unit, and can detect the breakdown condition of the high-side drive of the IGBT unit within 300 ms; and the working state does not need to be switched, the breakdown detection efficiency can be improved, and the power stability is high.
Description
Technical Field
The invention relates to the technical field of IGBT breakdown detection, in particular to a breakdown detection method of an IGBT unit.
Background
An Insulated Gate Bipolar Transistor (IGBT for short) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate field effect Transistor), and has the advantages of both high input impedance of MOSFET and low on-state voltage drop of GTR. The GTR saturation voltage is reduced, the current carrying density is high, but the driving current is large; the MOSFET has small driving power, high switching speed, large conduction voltage drop and small current carrying density. The IGBT integrates the advantages of the two devices, and has small driving power and reduced saturation voltage. The method is very suitable for being applied to the fields of current transformation systems with direct-current voltage of 600V or more, such as alternating-current motors, frequency converters, switching power supplies, lighting circuits, traction transmission and the like.
Breakdown of the IGBT during operation is a common phenomenon, and there are many factors causing the breakdown of the IGBT, for example: the IGBT may break down due to overcurrent, overvoltage, overtemperature, short circuit, and the like. With the development of semiconductor switch technology, semiconductor switch devices are widely applied to electric welding machines, frequency converters, SVG, flexible direct current transmission equipment and the like. Damage to semiconductor devices (e.g., IGBTs) often inevitably occurs during equipment production, commissioning, transportation, field repair, or rework. Under the condition of device damage, once the equipment is powered on and operated, the IGBT is extremely easy to be directly damaged, and the whole equipment can be completely or partially exploded in severe cases. It is therefore particularly desirable to provide a method which can be used to detect IGBT breakdown.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: a method capable of efficiently detecting IGBT cell breakdown is provided.
In order to solve the technical problems, the invention adopts the technical scheme that:
a breakdown detection method of an IGBT unit comprises the following steps:
s1, collecting current values output by the IGBT unit in three continuous periods and in the last 10% period of each period;
s2, judging whether the current values collected in the step S1 are all zero;
and S3, if not, judging that the IGBT unit is broken down.
The invention has the beneficial effects that:
according to the scheme, the current values output by the IGBT unit in three continuous periods and in the last 10% of each period are collected, whether the IGBT unit is broken down is judged by judging whether the collected current values are zero, the breakdown condition of high-side drive of the IGBT unit can be rapidly detected, and the breakdown condition of the high-side drive of the IGBT unit can be detected within 300 ms; moreover, the working state switching is not needed, the efficiency of breakdown detection can be improved, and the power stability is high; the breakdown detection method designed by the scheme can be used for directly performing breakdown detection on the IGBT unit in the working state, is high in detection accuracy, cannot influence the normal work of the IGBT unit, and can also stop outputting in time and feed back fault information to a server to wait for maintenance of a worker when the fault occurs.
Drawings
Fig. 1 is a flow chart of the steps of a breakdown detection method of an IGBT cell according to the present invention;
fig. 2 is a waveform diagram of current output without breakdown at an IGBT unit duty ratio of 20% according to a breakdown detection method of an IGBT unit according to the present invention;
fig. 3 is a waveform diagram of current output with a breakdown condition at an IGBT unit duty ratio of 20% according to a breakdown detection method of an IGBT unit according to the present invention;
fig. 4 is a waveform diagram of current output with a breakdown condition at an IGBT cell duty cycle of 20% according to a breakdown detection method of an IGBT cell according to the present invention;
fig. 5 is a waveform diagram of current output without breakdown at an IGBT cell duty ratio of 50% according to a breakdown detection method of an IGBT cell according to the present invention;
fig. 6 is a waveform diagram of current output with a breakdown condition when the duty ratio of the IGBT unit is 50% according to a breakdown detection method of the IGBT unit according to the present invention;
fig. 7 is a waveform diagram of current output with a breakdown condition at an IGBT cell duty cycle of 50% according to a breakdown detection method of an IGBT cell according to the present invention;
fig. 8 is a waveform diagram of current output without breakdown at an IGBT cell duty cycle of 80% according to a breakdown detection method of an IGBT cell according to the present invention;
fig. 9 is a waveform diagram of current output with a breakdown condition when the duty ratio of the IGBT unit is 80% according to a breakdown detection method of the IGBT unit according to the present invention;
fig. 10 is a waveform diagram of current output with a breakdown condition at an IGBT cell duty cycle of 80% according to a breakdown detection method of an IGBT cell according to the present invention;
fig. 11 is a waveform diagram of current output without breakdown at an IGBT cell duty ratio of 90% according to a breakdown detection method of an IGBT cell according to the present invention;
fig. 12 is a waveform diagram of current output with a breakdown condition at an IGBT cell duty cycle of 90% according to a breakdown detection method of an IGBT cell according to the present invention;
fig. 13 is a waveform diagram of current output with a breakdown condition when the duty ratio of the IGBT unit is 90% according to a breakdown detection method of the IGBT unit according to the present invention.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
The most key concept of the invention is as follows: according to the scheme, the current values output by the IGBT unit in three continuous periods and in the last 10% of each period are collected, whether the IGBT unit is broken down or not is judged by judging whether the collected current values are zero or not, and the breakdown condition of high-side drive of the IGBT unit can be quickly detected.
Referring to fig. 1, the technical solution provided by the present invention is:
a breakdown detection method of an IGBT unit comprises the following steps:
s1, collecting current values output by the IGBT unit in three continuous periods and in the last 10% period of each period;
s2, judging whether the current values collected in the step S1 are all zero;
and S3, if not, judging that the IGBT unit is broken down.
From the above description, the beneficial effects of the present invention are:
according to the scheme, the current values output by the IGBT unit in three continuous periods and in the last 10% of each period are collected, whether the IGBT unit is broken down is judged by judging whether the collected current values are zero, the breakdown condition of high-side drive of the IGBT unit can be rapidly detected, and the breakdown condition of the high-side drive of the IGBT unit can be detected within 300 ms; moreover, the working state switching is not needed, the efficiency of breakdown detection can be improved, and the power stability is high; the breakdown detection method designed by the scheme can be used for directly performing breakdown detection on the IGBT unit in the working state, is high in detection accuracy, cannot influence the normal work of the IGBT unit, and can also stop outputting in time and feed back fault information to a server to wait for maintenance of a worker when the fault occurs.
Further, the IGBT cells include an IGBT1 cell and an IGBT2 cell, the IGBT1 cell is electrically connected to the IGBT2 cell;
the method further comprises the following steps before the step S1:
dividing the IGBT unit into a first interval, a second interval and a third interval which are continuous according to a duty ratio in one period;
in the first interval, the IGBT1 unit is controlled to carry out current output from the beginning of the one period, and the IGBT2 unit is controlled to carry out current output from the half period of the one period;
in a second interval, the IGBT1 unit is controlled to output current from the beginning of the one period, and the IGBT2 unit is controlled to output current from the period of (100-duty cycle 100)/200 of the one period;
in the third interval, the IGBT1 cell and the IGBT2 cell are controlled to perform current output from the beginning of the one cycle.
Further, the first interval is the first 40% of the period range of one period, the second interval is the last 40% of the period range of the first interval, and the third interval is the last 20% of the period range of one period.
Further, the IGBT cells include an IGBT1 cell and an IGBT2 cell, the IGBT1 cell is electrically connected to the IGBT2 cell;
after the IGBT unit is judged to be broken down, the method further comprises the following steps:
presetting a superposed current value;
comparing the current values collected in the step S1 with the superposed current values respectively to obtain corresponding current difference values;
sequentially judging whether current difference values of the IGBT units in three continuous periods are all within a preset threshold range;
if yes, the IGBT1 unit and the IGBT2 unit are both broken down; if not, only one of the IGBT1 unit and the IGBT2 unit is determined to be broken down.
As can be seen from the above description, the collected current values are respectively compared with the preset superimposed current value to obtain corresponding current difference values, and the breakdown condition of the high-side tube of the IGBT unit can be determined by determining whether the current difference values are within the preset threshold range.
Further, the method for determining that only one of the IGBT1 cell and the IGBT2 cell is broken down is as follows:
controlling a high-side tube of the IGBT1 unit to be closed;
collecting the total current value of the IGBT unit;
judging whether the total current value of the collected IGBT units is zero or not;
if yes, judging that a high-side tube of the IGBT1 unit is broken down; if not, the high-side tube of the IGBT2 unit is judged to be broken down.
From the above description, when it is detected that only one of the IGBT1 unit and the IGBT2 unit is broken down, the high-side tube of the IGBT1 unit is turned off, the total current value of the IGBT unit is collected, and it can be determined that the high-side tube of the IGBT1 unit is broken down or the high-side tube of the IGBT2 unit is broken down by determining whether the collected total current value of the IGBT unit is zero, so that the accuracy of breakdown detection is high and fast.
Further, after the IGBT cell is determined to be broken down, the method further includes the steps of:
and controlling the IGBT unit to be cut off, generating fault information, and feeding the fault information back to the server.
According to the above description, after the IGBT unit is judged to be broken down, the IGBT unit can be controlled to be cut off and fault information can be generated, the fault information is fed back to the server, and when a fault occurs, the output can be stopped in time and the fault information can be fed back to the server to wait for a worker to maintain the server, so that the service life of the equipment is prolonged, and the safety of the worker is ensured.
Further, the method also comprises the following steps:
and if so, judging that the IGBT unit is not broken down.
Referring to fig. 1 to 13, a first embodiment of the present invention is:
a breakdown detection method of an IGBT unit comprises the following steps:
s1, collecting current values output by the IGBT unit in three continuous periods and in the last 10% period of each period;
s2, judging whether the current values collected in the step S1 are all zero;
s3, if not, judging that the IGBT unit is broken down; and if so, judging that the IGBT unit is not broken down.
And after the IGBT unit is judged to be broken down, the IGBT unit is controlled to be cut off, fault information is generated, and the fault information is fed back to the server.
The IGBT units comprise an IGBT1 unit and an IGBT2 unit, and the IGBT1 unit is electrically connected with the IGBT2 unit;
the last 10% of each cycle described above refers to:
assuming that one period is T, the collected current value refers to a current value in the range of (90% -100%) T.
The method further comprises the following steps before the step S1:
dividing the IGBT unit into a first interval, a second interval and a third interval which are continuous according to a duty ratio in one period;
in the first interval, the IGBT1 unit is controlled to carry out current output from the beginning of the one period, and the IGBT2 unit is controlled to carry out current output from the half period of the one period;
in a second interval, the IGBT1 unit is controlled to output current from the beginning of the one period, and the IGBT2 unit is controlled to output current from the period of (100-duty cycle 100)/200 of the one period;
in the third interval, the IGBT1 cell and the IGBT2 cell are controlled to perform current output from the beginning of the one cycle.
The first interval is the first 40% of the period of one period, the second interval is the last 40% of the period of the first interval, and the third interval is the last 20% of the period of one period.
Namely, the first interval is 0 to 40 percent, the second interval is 40 to 80 percent, and the third interval is 80 to 100 percent; precisely, the first interval is [ 0%, 40% ], the second interval is (40%, 80% ], and the first interval is (80%, 100% ]).
After the IGBT unit is judged to be broken down, the method further comprises the following steps:
presetting a superposed current value;
comparing the current values collected in the step S1 with the superposed current values respectively to obtain corresponding current difference values;
sequentially judging whether current difference values of the IGBT units in three continuous periods are all within a preset threshold range;
if yes, the IGBT1 unit and the IGBT2 unit are both broken down; if not, only one of the IGBT1 unit and the IGBT2 unit is determined to be broken down.
The method for judging whether only one of the IGBT1 unit and the IGBT2 unit is broken down comprises the following steps:
controlling a high-side tube of the IGBT1 unit to be closed;
collecting the total current value of the IGBT unit;
judging whether the total current value of the collected IGBT units is zero or not;
if yes, judging that a high-side tube of the IGBT1 unit is broken down; if not, the high-side tube of the IGBT2 unit is judged to be broken down.
The specific embodiment of the breakdown detection method of the IGBT unit described above is:
the following are current output waveform diagrams of the IGBT unit, the IGBT1 unit, and the IGBT2 unit of the present scheme under different duty cycles within one cycle, and this specific embodiment exemplifies four of them, as follows:
duty cycle refers to the proportion of the power-on time relative to the total time in a pulse cycle, and the Duty cycle (Duty Ratio) has the following meaning in the field of telecommunications: for example: the pulse width is 1 mus and the duty cycle of the pulse train for a signal period of 4 mus is 0.25, i.e. assuming that a period is 100% and is operating 40%, the duty cycle is 40%/100%/0.4.
In the first case: duty ratio is 20%;
referring to FIG. 2, the first graph is the current output waveform of the IGBT1 unit, the second graph is the current output waveform of the IGBT2 unit, and the third graph is the current output waveform of the IGBT (i.e. the current output waveform of the IGBT1 unit and the IGBT2 unit after being overlapped)
Assuming a period of T;
since the duty ratio is 20% in the first interval [ 0%, 40% ], the IGBT1 unit is controlled to perform current output from the start of the one period, and the IGBT2 unit is controlled to perform current output from a period one-half of the one period;
referring to fig. 2, the IGBT1 cell in the first graph has a current value at 0% T, i.e., the current output is performed from the beginning of a cycle; the IGBT2 cell in the second graph has current at 50% T, i.e., current output from one half of one cycle; the IGBT cell in the third graph corresponds to a current output value of 0A within (90%, 100%) T;
fig. 2 is a current output waveform diagram of the IGBT1 cell, the IGBT2 cell, and the IGBT cell without breakdown, that is, when the IGBT1 cell, the IGBT2 cell, and the IGBT cell without breakdown occur, the corresponding current output value of the IGBT cell within (90%, 100%) T is 0A.
Referring to fig. 3, a current output waveform diagram of the IGBT unit is shown, that is, a current output waveform diagram obtained by overlapping the IGBT1 unit and the IGBT2 unit;
in (90%, 100%) T, the current output value corresponding to the IGBT cell is detected to be 10A, indicating that the IGBT cell is broken down, and since the waveform diagram in fig. 3 is similar to the waveform diagram of the IGBT2 in fig. 2, it can be determined that the IGBT1 cell is broken down.
Referring to fig. 4, another current output waveform diagram of the IGBT unit is shown, namely a current output waveform diagram obtained by overlapping the IGBT1 unit and the IGBT2 unit;
in (90%, 100%) T, the current output value corresponding to the IGBT cell is detected to be 10A, indicating that the IGBT cell is broken down, and since the waveform diagram in fig. 4 is similar to the waveform diagram of the IGBT1 in fig. 2, it can be determined that the IGBT2 cell is broken down.
In the second case: the duty ratio is 50%;
referring to FIG. 2, the first graph is the current output waveform of the IGBT1 unit, the second graph is the current output waveform of the IGBT2 unit, and the third graph is the current output waveform of the IGBT (i.e. the current output waveform of the IGBT1 unit and the IGBT2 unit after being overlapped)
Assuming a period of T;
since the duty ratio is 50% in the second interval (40%, 80%), the IGBT1 unit is controlled to output current from the beginning of the one cycle, and the IGBT2 unit is controlled to output current from the (100-duty ratio 100)/200 cycle of the one cycle;
referring to fig. 5, the IGBT1 cell in the first graph has a current value at 0% T, i.e., the current output is performed from the beginning of a cycle; the IGBT2 cell in the second graph has current at 25% T (i.e., 1/4T), i.e., current output from (100-50% 100)/200-1/4 cycles of one cycle (100-duty cycle 100)/200; the IGBT cell in the third graph corresponds to a current output value of 0A within (90%, 100%) T;
fig. 5 is a current output waveform diagram of the IGBT1 cell, the IGBT2 cell, and the IGBT cell without breakdown, that is, when the IGBT1 cell, the IGBT2 cell, and the IGBT cell without breakdown, the corresponding current output value of the IGBT cell within (90%, 100%) T is 0A.
Referring to fig. 6, a current output waveform diagram of the IGBT unit is shown, that is, a current output waveform diagram obtained by overlapping the IGBT1 unit and the IGBT2 unit;
in (90%, 100%) T, the current output value corresponding to the IGBT cell is detected to be 10A, indicating that the IGBT cell is broken down, and since the waveform diagram in fig. 6 is similar to the waveform diagram of the IGBT2 in fig. 5, it can be determined that the IGBT1 cell is broken down.
Referring to fig. 7, another current output waveform diagram of the IGBT unit is shown, namely a current output waveform diagram obtained by overlapping the IGBT1 unit and the IGBT2 unit;
in (90%, 100%) T, the current output value corresponding to the IGBT cell is detected to be 10A, indicating that the IGBT cell is broken down, and since the waveform diagram in fig. 7 is similar to the waveform diagram of the IGBT1 in fig. 5, it can be determined that the IGBT2 cell is broken down.
In the third case: duty cycle is 80%;
referring to FIG. 8, the first graph is the current output waveform of the IGBT1 unit, the second graph is the current output waveform of the IGBT2 unit, and the third graph is the current output waveform of the IGBT (i.e. the current output waveform of the IGBT1 unit and the IGBT2 unit after being overlapped)
Assuming a period of T;
since the duty ratio of 80% belongs to the second interval (40%, 80%), the IGBT1 unit is controlled to output current from the beginning of the one cycle, and the IGBT2 unit is controlled to output current from the (100-duty ratio 100)/200 cycle of the one cycle;
referring to fig. 8, the IGBT1 cell in the first graph has a current value at 0% T, i.e., the current output is performed from the beginning of a cycle; the IGBT2 cells in the second graph have current at 10% T (i.e., 1/10T), i.e., current output from (100-80% 100)/200-1/10 cycles of one cycle (100-duty cycle 100)/200; the IGBT cell in the third graph corresponds to a current output value of 0A within (90%, 100%) T;
fig. 8 is a current output waveform diagram of the IGBT1 cell, the IGBT2 cell, and the IGBT cell without breakdown, that is, when the IGBT1 cell, the IGBT2 cell, and the IGBT cell without breakdown, the corresponding current output value of the IGBT cell within (90%, 100%) T is 0A.
Referring to fig. 9, a current output waveform diagram of the IGBT unit is shown, that is, a current output waveform diagram obtained by overlapping the IGBT1 unit and the IGBT2 unit;
in (90%, 100%) T, the current output value corresponding to the IGBT cell is detected to be 10A, indicating that the IGBT cell is broken down, and since the waveform diagram in fig. 9 is similar to the waveform diagram of the IGBT2 in fig. 8, it can be determined that the IGBT1 cell is broken down.
Referring to fig. 10, another current output waveform diagram of the IGBT unit is shown, namely a current output waveform diagram obtained by overlapping the IGBT1 unit and the IGBT2 unit;
in (90%, 100%) T, the current output value corresponding to the IGBT cell is detected to be 10A, indicating that the IGBT cell is broken down, and since the waveform diagram in fig. 10 is similar to the waveform diagram of the IGBT1 in fig. 8, it can be determined that the IGBT2 cell is broken down.
In a fourth case: the duty ratio is 90%;
referring to fig. 11, the first graph is a current output waveform diagram of the IGBT1 cell, the second graph is a current output waveform diagram of the IGBT2 cell, and the third graph is a current output waveform diagram of the IGBT cell (i.e., a current output waveform diagram of the IGBT1 cell and the IGBT2 cell after being superimposed).
Assuming a period of T;
since the duty ratio is 90% in the second interval (80%, 100%), the IGBT1 unit is controlled to output current from the beginning of the one cycle, and the IGBT2 unit is controlled to output current from the (100-duty ratio 100)/200 cycle of the one cycle;
referring to fig. 11, the IGBT1 cell in the first graph has a current value at 0% T, i.e., the current output is performed from the beginning of a cycle; the IGBT2 cell in the second graph has current at 25% T (i.e., 1/4T), i.e., current output from (100-90% 100)/200-1/20 cycles of one cycle (100-duty cycle 100)/200; the IGBT cell in the third graph corresponds to a current output value of 0A within (90%, 100%) T;
fig. 11 is a current output waveform diagram of the IGBT1 cell, the IGBT2 cell, and the IGBT cell without breakdown, that is, when the IGBT1 cell, the IGBT2 cell, and the IGBT cell without breakdown, the corresponding current output value of the IGBT cell within (90%, 100%) T is 0A.
Referring to fig. 12, a current output waveform diagram of the IGBT unit is shown, that is, a current output waveform diagram obtained by overlapping the IGBT1 unit and the IGBT2 unit;
in (90%, 100%) T, the current output value corresponding to the IGBT cell is detected to be 10A, indicating that the IGBT cell is broken down, and since the waveform diagram in fig. 12 is similar to the waveform diagram of the IGBT2 in fig. 11, it can be determined that the IGBT1 cell is broken down.
Referring to fig. 13, another current output waveform diagram of the IGBT unit is shown, namely a current output waveform diagram obtained by overlapping the IGBT1 unit and the IGBT2 unit;
in (90%, 100%) T, the current output value corresponding to the IGBT cell is detected to be 10A, indicating that the IGBT cell is broken down, and since the waveform diagram in fig. 13 is similar to the waveform diagram of the IGBT1 in fig. 11, it can be determined that the IGBT2 cell is broken down.
The IGBT units further comprise an IGBT3 unit, an IGBT4 unit, an IGBT5 unit and an IGBT6 unit … … IGBTn unit, the number of the IGBT units can be properly selected according to the size of the used power, when the power is high, the IGBT units can select a plurality of IGBT units, and the breakdown detection method of the IGBT1 unit and the breakdown detection method of the IGBT2 unit are also suitable for breakdown detection of the IGBT3 unit, the IGBT4 unit, the IGBT5 unit and the IGBT6 unit … … IGBTn unit.
In summary, according to the breakdown detection method for the IGBT unit provided by the present invention, by collecting the current values output by the IGBT unit in the three consecutive periods and in the last 10% of each period, and determining whether the IGBT unit is broken down by determining whether the collected current values are all zero, the breakdown condition of the high side drive of the IGBT unit can be quickly detected, and the breakdown condition of the high side drive of the IGBT unit can be detected within 300 ms; moreover, the working state switching is not needed, the efficiency of breakdown detection can be improved, and the power stability is high; the breakdown detection method designed by the scheme can be used for directly performing breakdown detection on the IGBT unit in the working state, is high in detection accuracy, cannot influence the normal work of the IGBT unit, and can also stop outputting in time and feed back fault information to a server to wait for maintenance of a worker when the fault occurs.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.
Claims (5)
1. A breakdown detection method of an IGBT unit is characterized by comprising the following steps:
s1, collecting current values output by the IGBT unit in three continuous periods and in the last 10% period of each period;
s2, judging whether the current values collected in the step S1 are all zero;
s3, if not, judging that the IGBT unit is broken down;
the IGBT units comprise an IGBT1 unit and an IGBT2 unit, and the IGBT1 unit is electrically connected with the IGBT2 unit;
after the IGBT unit is judged to be broken down, the method further comprises the following steps:
presetting a superposed current value;
comparing the current values collected in the step S1 with the superposed current values respectively to obtain corresponding current difference values;
sequentially judging whether current difference values of the IGBT units in three continuous periods are all within a preset threshold range;
if yes, the IGBT1 unit and the IGBT2 unit are both broken down; if not, judging that only one of the IGBT1 unit and the IGBT2 unit is broken down;
the method for judging whether only one of the IGBT1 unit and the IGBT2 unit is broken down comprises the following steps:
controlling a high-side tube of the IGBT1 unit to be closed;
collecting the total current value of the IGBT unit;
judging whether the total current value of the collected IGBT units is zero or not;
if yes, judging that a high-side tube of the IGBT1 unit is broken down; if not, the high-side tube of the IGBT2 unit is judged to be broken down.
2. The method of claim 1, wherein the IGBT cells comprise an IGBT1 cell and an IGBT2 cell, the IGBT1 cell being electrically connected to the IGBT2 cell;
the method further comprises the following steps before the step S1:
dividing the IGBT unit into a first interval, a second interval and a third interval which are continuous according to a duty ratio in one period;
in the first interval, the IGBT1 unit is controlled to carry out current output from the beginning of the one period, and the IGBT2 unit is controlled to carry out current output from the half period of the one period;
in a second interval, the IGBT1 unit is controlled to output current from the beginning of the one period, and the IGBT2 unit is controlled to output current from the period of (100-duty cycle 100)/200 of the one period;
in the third interval, the IGBT1 cell and the IGBT2 cell are controlled to perform current output from the beginning of the one cycle.
3. The method of claim 2, wherein the first interval is a first 40% cycle range of one cycle, the second interval is a second 40% cycle range of the first interval, and the third interval is a last 20% cycle range of one cycle.
4. The method for detecting breakdown of an IGBT cell according to claim 1, further comprising, after determining that the IGBT cell is broken down, the steps of:
and controlling the IGBT unit to be cut off, generating fault information, and feeding the fault information back to the server.
5. The method for detecting breakdown of an IGBT cell according to claim 1, further comprising the steps of:
and if so, judging that the IGBT unit is not broken down.
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