CN110243915B - Electrochemical sensor automatic identification and failure detection system and detection method thereof - Google Patents
Electrochemical sensor automatic identification and failure detection system and detection method thereof Download PDFInfo
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- CN110243915B CN110243915B CN201910538467.4A CN201910538467A CN110243915B CN 110243915 B CN110243915 B CN 110243915B CN 201910538467 A CN201910538467 A CN 201910538467A CN 110243915 B CN110243915 B CN 110243915B
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Abstract
The invention discloses an electrochemical sensor automatic identification and failure detection system and a detection method thereof, wherein the detection system comprises a single chip microcomputer, a liquid crystal control screen, a storage, a power supply, an AD conversion circuit and an electrochemical sensor automatic identification and failure detection circuit, the single chip microcomputer is respectively connected with the liquid crystal control screen, the storage, the power supply, the AD conversion circuit and the electrochemical sensor automatic identification and failure detection circuit, and the AD conversion circuit is connected with the electrochemical sensor automatic identification and failure detection circuit. The electrochemical sensor failure detection method adopts the electrochemical sensor automatic identification and failure detection system to detect the electrochemical sensor failure. The invention has simple structure, scientific and reasonable design and convenient use, and can quickly, efficiently and accurately detect whether the electrochemical sensor fails.
Description
Technical Field
The invention relates to an electrochemical sensor automatic identification and failure detection system and a detection method thereof.
Background
The electrochemical sensor can be applied to gas detection in various industries. Due to the fact that the validity period of the electrochemical sensor is 2-3 years, and the electrochemical sensor fails after the concentration of the sample gas exceeds the measuring range of the device in the using process, the testing result is inaccurate.
Therefore, designing an electrochemical sensor automatic identification and failure detection system and a detection method thereof for rapidly, efficiently and accurately detecting whether an electrochemical sensor fails is a technical problem to be solved by those skilled in the art.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the system and the method for automatically identifying and detecting the invalidity of the electrochemical sensor can quickly, efficiently and accurately detect whether the electrochemical sensor is invalid.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
electrochemical sensor automatic identification and inefficacy detecting system, control screen, memory, power, AD converting circuit and electrochemical sensor automatic identification and inefficacy detecting circuit including singlechip, liquid crystal, the singlechip respectively with the liquid crystal control the screen memory, power, AD converting circuit and electrochemical sensor automatic identification and inefficacy detecting circuit are connected, AD converting circuit with electrochemical sensor automatic identification and inefficacy detecting circuit are connected.
Further, the electrochemical sensor automatic identification and failure detection circuit comprises an electrochemical sensor access port provided with a CE pin access end, a RE pin access end and a WE pin access end, a programmable adjustable resistor U1, a MOS transistor Q1, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C5, an amplifier OP1, an automatic gain adjustment circuit, and an automatic bias generation circuit, wherein the CE access end, the RE access end and the WE access end are respectively used for accessing a CE pin, a RE pin and a WE pin of an electrochemical sensor;
the CE pin access end, the resistor R1, and the output end of the amplifier OP1 are sequentially connected in series, the RE pin access end, the resistor R2, the resistor R3, and the same-direction input end of the amplifier OP1 are sequentially connected in series, and the WE pin access end, the programmable adjustable resistor U1, the automatic gain adjusting circuit, the resistor R4, the resistor R5, and the reverse-direction input end of the amplifier OP1 are sequentially connected in series;
two ends of the capacitor C1 are connected to the CE pin access end and the RE pin access end, respectively, and two ends of the capacitor C3 are connected to the unidirectional input end of the amplifier OP1 and the output end of the amplifier OP1, respectively; one end of the capacitor C5 is connected with the programmable adjustable resistor U1, and the other end of the capacitor C5 is grounded; one end of the capacitor C2 is connected between the resistor R2 and the resistor R3, and the other end thereof is connected between the resistor R1 and the output end of the amplifier OP 1;
the automatic bias voltage generating circuit is connected with the reverse input end of the amplifier OP1, the automatic bias voltage generating circuit is grounded, the drain D of the MOS tube Q1 is connected with the WE pin access end, the source S of the MOS tube Q1 is connected with the RE pin access end, the grid G of the MOS tube Q1 and the automatic bias voltage generating circuit are respectively connected with one pin of the singlechip, one pin of the singlechip is connected between the resistor R4 and the resistor R5, and the automatic gain adjusting circuit is connected with the singlechip through the AD conversion circuit.
Further, the automatic gain adjusting circuit includes an amplifier OP2, a programmable adjustable resistor U3, a programmable adjustable resistor U4, a programmable adjustable resistor U5, and a capacitor C6, an inverting input terminal of the amplifier OP2, the programmable adjustable resistor U3, the programmable adjustable resistor U4, the programmable adjustable resistor U5, and an output terminal of the amplifier OP2 are sequentially connected in series, two ends of the capacitor C6 are respectively connected to an inverting input terminal of the amplifier OP2 and an output terminal of the amplifier OP2, an inverting input terminal of the amplifier OP2 is connected to the programmable adjustable resistor U1, a homodromous input terminal of the amplifier OP2 is connected to the resistor R4, and an output terminal of the amplifier OP2 is connected to the single chip microcomputer through the AD conversion circuit.
Further, the automatic bias generating circuit includes a MOS transistor Q2, a programmable adjustable resistor U2, a programmable adjustable resistor U6, and a capacitor C4, a drain D of the MOS transistor Q2, the capacitor C4, the programmable adjustable resistor U6, the programmable adjustable resistor U2, and a source S of the MOS transistor Q2 are sequentially connected in series, the drain D of the MOS transistor Q2 is connected to an inverting input terminal of the amplifier OP1, a gate G of the MOS transistor Q2 is connected to one pin of the single chip, and the capacitor C4 and the programmable adjustable resistor U6 are grounded.
Further, the programmable adjustable resistor U1 is an X9C102 programmable resistor, the adjustable range of the resistance value is 0 to 1K Ω, and the programmable adjustable resistor U2, the programmable adjustable resistor U3, the programmable adjustable resistor U4, the programmable adjustable resistor U5, and the programmable adjustable resistor U6 are all X9C104 programmable resistors, and the adjustable range of the resistance value is 0 to 100K Ω.
Further, the resistance value of the resistor R1 is 1K Ω, the resistance value of the resistor R2 is 10K Ω, the resistance value of the resistor R3 is 10K Ω, the resistance value of the resistor R4 is 47.5K Ω, and the resistance value of the resistor R5 is 27.4K Ω.
Further, the capacitor C1 is a 10nf capacitor, the capacitor C2 is a 10nf capacitor, the capacitor C3 is a 10nf capacitor, the capacitor C4 is a 10nf capacitor, and the capacitor C5 is a 100nf capacitor.
The electrochemical sensor failure detection method adopts the electrochemical sensor automatic identification and failure detection system to detect the electrochemical sensor failure.
Further, the method comprises the following steps:
step 1, accessing an electrochemical sensor to be detected into an electrochemical sensor automatic identification and failure detection system and starting the electrochemical sensor automatic identification and failure detection system;
step 3, after initialization is completed, changing parameters of an automatic identification and failure detection circuit of the electrochemical sensor to enable bias voltage of the electrochemical sensor to be detected to generate disturbance;
and 4, detecting whether the output voltage of the electrochemical sensor automatic identification and failure detection circuit changes along with the bias disturbance of the electrochemical sensor to be detected, if the output voltage disturbance amplitude is large, the electrochemical sensor to be detected is normal, and if the output voltage disturbance amplitude is small or no disturbance exists, the electrochemical sensor to be detected is failed.
Further, the bias perturbation range of the electrochemical sensor to be detected is ± 1 mv.
Compared with the prior art, the invention has the following beneficial effects:
the invention has simple structure, scientific and reasonable design and convenient use, and can quickly, efficiently and accurately detect whether the electrochemical sensor fails.
The invention inputs a bias voltage of +/-1 mv to the electrochemical sensor to be detected through the electrochemical sensor automatic identification and failure detection system, the singlechip is connected with the voltage output end of the electrochemical sensor automatic identification and failure detection circuit through the AD conversion circuit so as to monitor the Vout change condition of the electrochemical sensor automatic identification and failure detection circuit, and when the Vout changes and the correct bias voltage is input, the output voltage Vout of the electrochemical sensor automatic identification and failure detection circuit is recovered to be normal. Whereby it can be judged that the sensor is normal.
If the input +/-1 mv bias electrochemical sensor automatically identifies and the voltage output Vout of the failure detection circuit has no change, the electrochemical sensor is preliminarily judged to be in failure. The bias voltage is changed into the correct value to be input, the electrochemical sensor can automatically recognize and the failure detection circuit still has no normal output, the electrochemical sensor can be judged to be determined to be bad, and the detection result is quick, efficient and accurate.
Drawings
Fig. 1 is a system block diagram of an electrochemical sensor automatic identification and failure detection system of the present invention.
Fig. 2 is a driving schematic diagram of an electrochemical sensor automatic identification and failure detection circuit according to the present invention.
Detailed Description
The present invention will be further described with reference to the following description and examples, which include but are not limited to the following examples.
As shown in figures 1 and 2, the electrochemical sensor automatic identification and failure detection system provided by the invention has the advantages of simple structure, scientific and reasonable design and convenient use, and can be used for rapidly, efficiently and accurately detecting whether the electrochemical sensor fails or not. The device comprises a single chip microcomputer, a liquid crystal control screen, a memory, a power supply, an AD conversion circuit and an electrochemical sensor automatic identification and failure detection circuit, wherein the single chip microcomputer is respectively connected with the liquid crystal control screen, the memory, the power supply, the AD conversion circuit and the electrochemical sensor automatic identification and failure detection circuit, the AD conversion circuit is connected with the electrochemical sensor automatic identification and failure detection circuit, and the memory is any one of an SD card, a TF card, an E2PROM and an RAM.
The automatic identification and failure detection circuit of the electrochemical sensor comprises an electrochemical sensor access port, a programmable adjustable resistor U1, an MOS tube Q1, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C5, an amplifier OP1, an automatic gain adjustment circuit and an automatic bias generation circuit, wherein the CE access port, the RE access port and the WE access port are respectively used for accessing a CE pin, an RE pin and a WE pin of the electrochemical sensor; the CE pin access end, the resistor R1 and the output end of the amplifier OP1 are sequentially connected in series, the RE pin access end, the resistor R2, the resistor R3 and the same-direction input end of the amplifier OP1 are sequentially connected in series, and the WE pin access end, the programmable adjustable resistor U1, the automatic gain adjusting circuit, the resistor R4, the resistor R5 and the reverse-direction input end of the amplifier OP1 are sequentially connected in series.
In the invention, two ends of the capacitor C1 are respectively connected with the CE pin access end and the RE pin access end, and two ends of the capacitor C3 are respectively connected with the homodromous input end of the amplifier OP1 and the output end of the amplifier OP 1; one end of the capacitor C5 is connected with the programmable adjustable resistor U1, and the other end of the capacitor C5 is grounded; one end of the capacitor C2 is connected between the resistor R2 and the resistor R3, and the other end thereof is connected between the resistor R1 and the output end of the amplifier OP 1; the automatic bias voltage generating circuit is connected with the reverse input end of the amplifier OP1, the automatic bias voltage generating circuit is grounded, the drain D of the MOS tube Q1 is connected with the WE pin access end, the source S of the MOS tube Q1 is connected with the RE pin access end, the grid G of the MOS tube Q1 and the automatic bias voltage generating circuit are respectively connected with one pin of the singlechip, one pin of the singlechip is connected between the resistor R4 and the resistor R5, and the automatic gain adjusting circuit is connected with the singlechip through the AD conversion circuit.
The automatic gain adjusting circuit comprises an amplifier OP2, a programmable adjustable resistor U3, a programmable adjustable resistor U4, a programmable adjustable resistor U5 and a capacitor C6, wherein the reverse input end of the amplifier OP2, the programmable adjustable resistor U3, the programmable adjustable resistor U4, the programmable adjustable resistor U5 and the output end of the amplifier OP2 are sequentially connected in series, two ends of the capacitor C6 are respectively connected with the reverse input end of the amplifier OP2 and the output end of the amplifier OP2, the reverse input end of the amplifier OP2 is connected with the programmable adjustable resistor U1, the homodromous input end of the amplifier OP2 is connected with the resistor R4, and the output end of the amplifier OP2 is connected with a single chip microcomputer through the AD conversion circuit.
The automatic bias generation circuit comprises an MOS tube Q2, a programmable adjustable resistor U2, a programmable adjustable resistor U6 and a capacitor C4, wherein a drain D of the MOS tube Q2, the capacitor C4, the programmable adjustable resistor U6, the programmable adjustable resistor U2 and a source S of the MOS tube Q2 are sequentially connected in series, a drain D of the MOS tube Q2 is connected with a reverse input end of the amplifier OP1, a grid G of the MOS tube Q2 is connected with one pin of a single chip microcomputer, and the capacitor C4 and the programmable adjustable resistor U6 are grounded.
The programmable adjustable resistor U1 is an X9C102 programmable resistor, the adjustable range of the resistance value is 0-1K omega, the programmable adjustable resistor U2, the programmable adjustable resistor U3, the programmable adjustable resistor U4, the programmable adjustable resistor U5 and the programmable adjustable resistor U6 are all X9C104 programmable resistors, and the adjustable range of the resistance value is 0-100K omega. The resistance value of the resistor R1 is 1K omega, the resistance value of the resistor R2 is 10K omega, the resistance value of the resistor R3 is 10K omega, the resistance value of the resistor R4 is 47.5K omega, and the resistance value of the resistor R5 is 27.4K omega. The capacitor C1 is a 10nf capacitor, the capacitor C2 is a 10nf capacitor, the capacitor C3 is a 10nf capacitor, the capacitor C4 is a 10nf capacitor, and the capacitor C5 is a 100nf capacitor.
The programmable adjustable resistors U1-6 of the invention are X9Cxxx series programmable adjustable resistors, and the specific resistance value of the resistors can be adjusted by a singlechip.
The programmable adjustable resistor U1 can generate a resistance value of 0-1K by adopting X9C102, and can meet the requirements of load resistors of all electrochemical sensors, so the circuit can be adapted to all electrochemical sensors in the market, and after electrochemical sensors of different brands are inserted into the circuit, the singlechip can adjust the load resistors according to the parameters of the electrochemical sensors.
The programmable adjustable resistors U3\ U4\ U5 in the automatic gain adjusting circuit are connected in series by adopting an X9C104 programmable adjustable resistor, and the singlechip can automatically adjust three resistors according to system requirements so as to achieve the purpose of automatic gain adjustment, so that the system can adjust the gain according to response results, and when the output current of the sensor is small, so that the SEN _ VOUT _ OP output is too small to be measured, the singlechip can properly adjust the value of U3\ U4\ U5 so as to increase the gain; when the output current of the sensor is larger, the SEN _ VOUT _ OP output is too large to exceed the measuring range, the singlechip can properly adjust the value of U3\ U4\ U5 to reduce the gain, so that the measuring range of the AD circuit at the later stage is matched;
according to the automatic BIAS generation circuit, when BIAS needs to be generated to achieve a sensor detection function or some sensors need to generate BIAS, the single chip microcomputer can enable the BIAS circuit U2/U6 to generate the required BIAS by pulling down the BIAS _ SWITCH pin of Q2, the U2\ U6 are connected in series by adopting the X9C104 programmable adjustable resistor, and the single chip microcomputer can automatically adjust the two resistors according to system requirements, so that the purpose of BIAS adjustment is achieved.
The electrochemical sensor failure detection method adopts the electrochemical sensor automatic identification and failure detection system to detect the electrochemical sensor failure. The method comprises the following steps:
step 1, accessing an electrochemical sensor to be detected into an electrochemical sensor automatic identification and failure detection system and starting the electrochemical sensor automatic identification and failure detection system;
step 3, after the initialization is completed, changing parameters of the automatic identification and failure detection circuit of the electrochemical sensor, so that the bias voltage of the electrochemical sensor to be detected generates disturbance of +/-1 mv;
and 4, detecting whether the output voltage of the electrochemical sensor automatic identification and failure detection circuit changes along with the bias disturbance of the electrochemical sensor to be detected, if the output voltage disturbance amplitude is large, the electrochemical sensor to be detected is normal, and if the output voltage disturbance amplitude is small or no disturbance exists, the electrochemical sensor to be detected is failed.
The invention inputs a bias voltage of +/-1 mv to the electrochemical sensor to be detected through the electrochemical sensor automatic identification and failure detection system, the singlechip is connected with the voltage output end of the electrochemical sensor automatic identification and failure detection circuit through the AD conversion circuit so as to monitor the Vout change condition of the electrochemical sensor automatic identification and failure detection circuit, and when the Vout changes and the correct bias voltage is input, the output voltage Vout of the electrochemical sensor automatic identification and failure detection circuit is recovered to be normal. Whereby it can be judged that the sensor is normal.
If the input +/-1 mv bias electrochemical sensor automatically identifies and the voltage output Vout of the failure detection circuit has no change, the electrochemical sensor is preliminarily judged to be in failure. The bias voltage is changed into the correct value to be input, the electrochemical sensor can automatically recognize and the failure detection circuit still has no normal output, the electrochemical sensor can be judged to be determined to be bad, and the detection result is quick, efficient and accurate.
The electrochemical sensor automatic identification and failure detection system also has the function of automatically identifying the electrochemical sensor, and the specific identification process comprises the following steps:
step 1, storing official information of the electrochemical sensor for fire protection in a memory, and establishing an electrochemical sensor database;
step 3, accessing the electrochemical sensor to be identified into an electrochemical sensor automatic identification and failure detection circuit, electrifying a single chip microcomputer, and reading a no-load output value and a characteristic value of the electrochemical sensor to be identified from a memory by the single chip microcomputer;
step 4, the single chip microcomputer respectively carries out correct configuration on the electrochemical sensor automatic identification and the failure detection circuit according to the no-load output value and the characteristic value of the electrochemical sensor to be identified;
and 5, the single chip microcomputer powers on the electrochemical sensor to be identified through the electrochemical sensor automatic identification and failure detection circuit, monitors the voltage value of the electrochemical sensor to be identified in each time period in the power-on process through the AD conversion circuit, and simultaneously matches the monitored voltage value with the electrochemical sensor in the electrochemical sensor database in the memory, so that the electrochemical sensor to be identified is automatically identified.
Before the electrochemical sensor is subjected to failure detection, the electrochemical sensor is required to be identified to determine the type of the electrochemical sensor, the identification method can be adopted, so that when the electrochemical sensor is subjected to failure detection, the load resistance, the gain resistance and the bias voltage in the electrochemical sensor automatic identification and failure detection circuit can be configured according to different types of electrochemical sensors, the load resistance value, the gain resistance value and the bias voltage value are determined, the electrochemical sensor automatic identification and failure detection circuit output voltage value is determined, and meanwhile, the failure test on a specific electrochemical sensor is also determined. The single chip microcomputer automatically inputs the bias value +/-1 mv, then reads the output voltage of the electrochemical sensor automatic identification and failure detection circuit, records the output voltage, and judges that the sensor can be normally used if the voltage changes. If the input bias value is +/-1 mv, the electrochemical sensor automatically identifies and the output voltage of the failure detection circuit is unchanged, the sensor is judged to be failed. And the singlechip outputs a final detection result to be displayed on the liquid crystal control screen.
The invention can accurately judge whether the electrochemical sensor can work normally, thereby avoiding the error conclusion of the electrochemical sensor due to the factors of the sensor when the electrochemical sensor detects gas.
The above-mentioned embodiment is only one of the preferred embodiments of the present invention, and should not be used to limit the scope of the present invention, but all the insubstantial modifications or changes made within the spirit and scope of the main design of the present invention, which still solve the technical problems consistent with the present invention, should be included in the scope of the present invention.
Claims (9)
1. The electrochemical sensor automatic identification and failure detection system is characterized by comprising a single chip microcomputer, a liquid crystal control screen, a storage, a power supply, an AD conversion circuit and an electrochemical sensor automatic identification and failure detection circuit, wherein the single chip microcomputer is respectively connected with the liquid crystal control screen, the storage, the power supply, the AD conversion circuit and the electrochemical sensor automatic identification and failure detection circuit, and the AD conversion circuit is connected with the electrochemical sensor automatic identification and failure detection circuit;
the electrochemical sensor automatic identification and failure detection circuit comprises an electrochemical sensor access port with a CE pin access end, a RE pin access end and a WE pin access end, a programmable adjustable resistor U1, an MOS transistor Q1, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C5, an amplifier OP1, an automatic gain adjustment circuit and an automatic bias generation circuit, wherein the CE pin access end, the RE pin access end and the WE pin access end are respectively used for accessing a CE pin, a RE pin and a WE pin of an electrochemical sensor;
the CE pin access end, the resistor R1, and the output end of the amplifier OP1 are sequentially connected in series, the RE pin access end, the resistor R2, the resistor R3, and the same-direction input end of the amplifier OP1 are sequentially connected in series, and the WE pin access end, the programmable adjustable resistor U1, the automatic gain adjusting circuit, the resistor R4, the resistor R5, and the reverse-direction input end of the amplifier OP1 are sequentially connected in series;
two ends of the capacitor C1 are connected to the CE pin access end and the RE pin access end, respectively, and two ends of the capacitor C3 are connected to the unidirectional input end of the amplifier OP1 and the output end of the amplifier OP1, respectively; one end of the capacitor C5 is connected with the programmable adjustable resistor U1, and the other end of the capacitor C5 is grounded; one end of the capacitor C2 is connected between the resistor R2 and the resistor R3, and the other end thereof is connected between the resistor R1 and the output end of the amplifier OP 1;
the automatic bias voltage generating circuit is connected with the reverse input end of the amplifier OP1, the automatic bias voltage generating circuit is grounded, the drain D of the MOS tube Q1 is connected with the WE pin access end, the source S of the MOS tube Q1 is connected with the RE pin access end, the grid G of the MOS tube Q1 and the automatic bias voltage generating circuit are respectively connected with one pin of the singlechip, one pin of the singlechip is connected between the resistor R4 and the resistor R5, and the automatic gain adjusting circuit is connected with the singlechip through the AD conversion circuit.
2. The electrochemical sensor automatic identification and failure detection system of claim 1, the automatic gain adjusting circuit is characterized by comprising an amplifier OP2, a programmable adjustable resistor U3, a programmable adjustable resistor U4, a programmable adjustable resistor U5 and a capacitor C6, the inverting input end of the amplifier OP2, the programmable adjustable resistor U3, the programmable adjustable resistor U4, the programmable adjustable resistor U5 and the output end of the amplifier OP2 are connected in series in sequence, two ends of the capacitor C6 are respectively connected with the inverting input terminal of the amplifier OP2 and the output terminal of the amplifier OP2, the inverting input terminal of the amplifier OP2 is connected with the programmable adjustable resistor U1, the homodromous input terminal of the amplifier OP2 is connected with the resistor R4, the output end of the amplifier OP2 is connected with the singlechip through the AD conversion circuit.
3. The automatic electrochemical sensor identification and failure detection system of claim 2, wherein the automatic bias generation circuit comprises a MOS transistor Q2, a programmable adjustable resistor U2, a programmable adjustable resistor U6, and a capacitor C4, a drain D of the MOS transistor Q2, the capacitor C4, the programmable adjustable resistor U6, the programmable adjustable resistor U2, and a source S of the MOS transistor Q2 are serially connected, a drain D of the MOS transistor Q2 is connected to an inverting input terminal of the amplifier OP1, a gate G of the MOS transistor Q2 is connected to one pin of the single chip microcomputer, and the capacitor C4 and the programmable adjustable resistor U6 are grounded.
4. The electrochemical sensor automatic identification and failure detection system of claim 3, wherein the programmable adjustable resistor U1 is an X9C102 programmable resistor with a resistance value adjustable range of 0-1K Ω, and the programmable adjustable resistor U2, the programmable adjustable resistor U3, the programmable adjustable resistor U4, the programmable adjustable resistor U5 and the programmable adjustable resistor U6 are all X9C104 programmable resistors with a resistance value adjustable range of 0-100K Ω.
5. The electrochemical sensor automatic identification and failure detection system according to claim 4, wherein the resistance value of the resistor R1 is 1K Ω, the resistance value of the resistor R2 is 10K Ω, the resistance value of the resistor R3 is 10K Ω, the resistance value of the resistor R4 is 47.5K Ω, and the resistance value of the resistor R5 is 27.4K Ω.
6. The electrochemical sensor automatic identification and failure detection system of claim 5, wherein the capacitance C1 is a 10nf capacitance, the capacitance C2 is a 10nf capacitance, the capacitance C3 is a 10nf capacitance, the capacitance C4 is a 10nf capacitance, and the capacitance C5 is a 100nf capacitance.
7. The electrochemical sensor failure detection method is characterized in that the electrochemical sensor failure detection is carried out by adopting the electrochemical sensor automatic identification and failure detection system of any one of claims 1 to 6.
8. The method of detecting failure of an electrochemical sensor according to claim 7, comprising the steps of:
step 1, accessing an electrochemical sensor to be detected into an electrochemical sensor automatic identification and failure detection system and starting the electrochemical sensor automatic identification and failure detection system;
step 2, initializing an electrochemical sensor automatic identification and failure detection system;
step 3, after initialization is completed, changing parameters of an automatic identification and failure detection circuit of the electrochemical sensor to enable bias voltage of the electrochemical sensor to be detected to generate disturbance;
and 4, detecting whether the output voltage of the electrochemical sensor automatic identification and failure detection circuit changes along with the bias disturbance of the electrochemical sensor to be detected, if the output voltage disturbance amplitude is large, the electrochemical sensor to be detected is normal, and if the output voltage disturbance amplitude is small or no disturbance exists, the electrochemical sensor to be detected is failed.
9. The method for detecting the failure of an electrochemical sensor according to claim 8, wherein in the step 3, the bias perturbation range of the electrochemical sensor to be detected is ± 1 mv.
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