CN110241423A - Ag films etchant and the engraving method and metal pattern forming method for utilizing it - Google Patents
Ag films etchant and the engraving method and metal pattern forming method for utilizing it Download PDFInfo
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- CN110241423A CN110241423A CN201811297108.6A CN201811297108A CN110241423A CN 110241423 A CN110241423 A CN 110241423A CN 201811297108 A CN201811297108 A CN 201811297108A CN 110241423 A CN110241423 A CN 110241423A
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- acid
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- etchant
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
Abstract
The present invention provides Ag films etchant and engraving method and metal pattern forming method using it, and the Ag films etchant is characterized in that, relative to the total weight of composition, includes: (A) inorganic acid of 1 to 10 weight %；(B) organic acid of 30 to 70 weight %；(C) peroxide of 0.1 to 10 weight %；(D) of 0.01 to 1 weight % has the water soluble compound of nitrogen-atoms and carboxyl in an intramolecular；(E) 3-triazole compounds of 0.01 to 1 weight %；And the water of (F) surplus.
Description
Technical field
Engraving method and the metal pattern side of being formed the present invention relates to a kind of Ag films etchant and using it
Method.
Background technique
With the real information age is stepped into, for handling and showing that the display field of bulk information rapidly develops, with
This correspondingly develops a variety of flat-panel monitors and attracts attention.
As the example of this panel display apparatus, liquid crystal display device (Liquid crystal display can be enumerated
Device:LCD), plasm display device (Plasma Display Panel device:PDP), Field emission displays dress
Set (Field Emission Display device:FED), el display device (Electroluminescence
Display device:ELD), Organic Light Emitting Diode (Organic Light Emitting Diodes:OLED) etc., it is this
Panel display apparatus is not only in the field of household appliances such as television set or video recorder but also in the computer and mobile phone of such as notebook etc.
It is used in multiple use.These panel display apparatus are due to the excellent performance such as slimming, lightweight and low power consumption
Rapidly instead of the cathode-ray tube (Cathode Ray Tube:NIT) used in the past.
Especially since OLED element itself shines and can also be driven at low voltage, therefore in recent years portable
OLED is applied in the miniscopes such as equipment market rapidly.Surmount miniscope in addition, OLED is currently in and realize large size
The state of the commercialization of TV.
In addition, such as tin indium oxide (Indium Tin Oxide, ITO), indium zinc oxide (Indium Zinc Oxide, IZO)
Deng conductive metal it is more excellent to the transmissivity of light and conductive, therefore as being used in panel display apparatus
Colour filter electrode and be widely used.But these metals also have high resistance, realize by improving response speed
Become obstacle when the enlargement and high-resolution of panel display apparatus.
In addition, aluminium (Al) reflecting plate was mainly used for product in the past, but in order to bright by improving in the case where reflecting plate
Degree is to realize low-power consumption, in the state groped towards the higher metal change material of reflectivity.Thus, it is desirable to by will with it is flat
Than the silver with lower specific resistance and higher brightness, (Ag: specific resistance is about 1.59 μ to the metal phase applied in plate display device
Ω cm) film, silver alloy or the multilayer film comprising it be applied in the wiring of electrode, LCD or OLED and reflecting plate of colour filter, and it is real
The enlargement and high-resolution and low-power consumption etc. of existing panel display apparatus, correspondingly require exploitation for using the material
Etching solution.
But insulating substrate for glass etc. or the semiconductor being made of intrinsic amorphous silicon or the amorphous silicon of doping etc.
The adherence (adhesion) of the lower basal plate of substrate etc., silver-colored (Ag) is excessively poor, to be not easy to be deposited, is easy to induce wiring
Tilting (lifting) or removing (Peeling).In addition, even if in the case where silver conductive layer is deposited on substrate, also for
It carries out the patterning of the silver conductive layer and uses etching solution.The case where using existing etching solution as this etching solution
Under, due to the tilting or peeling that silver is etched excessively or silver is unevenly etched and is routed, the side wheel of wiring
It is wide poor.
In addition, having difficulties when carrying out and realizing process for realizing high-resolution low crooked (LOW Skew).
In particular, silver is the metal for being easy to be reduced, due to the etching speed of silver is fast in the case where no induction residue
It is etched, but at this time because the etching speed of silver is poor without the etching speed between top and the bottom occurs fastly, it is difficult to after forming etching
Cone angle (taper angle) and be difficult to ensure the straightness of etched pattern, to have when forming wiring and pattern more
Limitation.
When forming insulating film or subsequent wiring in the case where metal film is erected vertically without cone angle, in subsequent handling,
It is possible that gap can occur between silver and insulating film or wiring, and this gap becomes a problem that electric short circuit occurs
Reason.
Although disclosed in Korean granted patent the 10-1323458th by silver or the monofilm that is formed of silver alloy and by
The multilayer film etchant that the monofilm and indium oxide film are constituted, but the master as the technical field can not be fully solved
Want the residue and silver-colored absorption problem again of problem.
[existing technical literature]
[patent document]
(patent document 1): Korean granted patent the 10-1323458th
Summary of the invention
Technical problem
The present invention is for improving above-mentioned problem of the prior art, the purpose is to provide a kind of Ag films etchant,
The Ag films etchant is characterized in that, for etching the monofilm formed by silver or silver alloy and by the single layer
Silver absorption problem again will not occur for the multilayer film that film and transparent conductive film are constituted, and will not occur monofilm and multilayer film at
The precipitation problem divided.
Moreover, it is an object that a kind of Ag films that can etch the monofilm and the multilayer film simultaneously
Etchant.
Moreover, it is an object that one kind can adjust side etching (Side by controlling etching speed
Etch Ag films etchant).
Moreover, it is an object that a kind of can be effectively applied in the case where the damage of not lower film
Show the Ag films etchant in the wet etching of etch uniformity.
Moreover, it is an object that a kind of engraving method using the Ag films etchant.
Moreover, it is an object that a kind of metal pattern side of being formed using the Ag films etchant
Method.
Technical solution
To achieve the goals above, the present invention provides a kind of Ag films etchant, which is characterized in that relative to group
Close object total weight, include: (A) inorganic acid of 1 to 10 weight %；(B) organic acid of 30 to 70 weight %；0.1 to 10 weight
Measure (C) peroxide of %；(D) of 0.01 to 1 weight % has the water-soluble chemical combination of nitrogen-atoms and carboxyl in an intramolecular
Object；(E) 3-triazole compounds of 0.01 to 1 weight %；And the water of (F) surplus.
In addition, the present invention provides a kind of engraving method using the Ag films etchant.
In addition, the present invention provides a kind of metal pattern forming method using the Ag films etchant.
Beneficial effect
Ag films etchant of the invention provides following effect: that is, the Ag films etchant is used for
The monofilm that etching is formed by silver or silver alloy and the multilayer film being made of the monofilm and transparent conductive film, will not occur silver
It adsorbs again, the precipitation problem of monofilm and multilayer film component.
Pass through in addition, Ag films etchant of the invention provides while etching the monofilm and the multilayer film
And improve the effect of etching efficiency.
In addition, Ag films etchant offer of the invention can be existing by the way that etch-stop (etch stop) occurs
As and control etching speed and adjust the effect of side etching (side etch).
In addition, Ag films etchant of the invention can be effectively applied to the feelings in the damage of not lower film
In the wet etching for showing etch uniformity under condition.
Specific embodiment
The present invention relates to a kind of Ag films etchants, which is characterized in that comprising (A) inorganic acid, (B) organic acid,
(C) peroxide, (D) an intramolecular have the water soluble compound of nitrogen-atoms and carboxyl, (E) 3-triazole compounds and
(F) water uses (C) peroxide and (D) to have nitrogen-atoms and carboxyl in intramolecular at the same time through experimental confirmation
Very excellent effect is showed as silver adsorption inhibitor in the case where water soluble compound, so as to complete the present invention.
Ag films etchant of the invention is characterized in that, can be used for etching and is formed by silver or silver alloy
Monofilm and the multilayer film being made of the monofilm and transparent conductive film, will not occur silver adsorb again, monofilm and multilayer film
The precipitation problem of ingredient.
Ag films etchant of the invention can etch the monofilm and the multiple film simultaneously.
Ag films etchant of the invention, which can provide, to control etching speed simultaneously by the way that etch-stop occurs
Adjust the effect of side etching.
Ag films etchant of the invention can be effectively applied in the case where the damage of not lower film
It shows in the wet etching of etch uniformity.
The silver alloy can have using silver as principal component comprising Nd, Cu, Pd, Nb, Ni, Mo, Ni, Cr, Mg, W, Pa and Ti
Deng the alloy morphology of other metals and nitride, silicide, carbide and oxide of silver etc., but not limited to this.
The transparent conductive film may include selected from by tin indium oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide
(ITZO) and more than one of the group of indium gallium zinc (IGZO) composition.
The multilayer film may include by transparent conductive film/silver, transparent conductive film/silver alloy, transparent conductive film/silver/transparent
The multilayer film that conductive film or transparent conductive film/silver alloy/transparent conductive film are formed.
Ag films etchant of the invention can be used for reflectance coating OLED tft array substrate, touch screen panel is used
In the formation of trace (trace) wiring or nano wire (nanowire) wiring, but not limited to this, can be used for comprising the list
In the electronic part material of tunic and the multilayer film.
(A) inorganic acid
The inorganic acid be the ingredient as main oxidant, execute by make in indium oxide film/Ag/ indium oxide film silver and
Indium oxide film aoxidizes and carries out the effect of wet etching.
Relative to the total weight of composition, it may include the inorganic acid of 1 to 10 weight %, preferably comprise 3 to 9 weight %
The inorganic acid.It is possible to that the etching speed because of silver can be caused in the case where the content of the inorganic acid is less than 1 weight %
Decline and silver-colored residue are bad caused by occurring, and have Yin Yin and oxygen in the case where the content of the inorganic acid is greater than 10 weight %
Overetch phenomenon occurs for the etching speed for changing indium film to become the drawback of problem in the subsequent process fastly.
Concrete example as the inorganic acid can enumerate nitric acid and hydrochloric acid etc., it is preferable to use nitric acid.
(B) organic acid
The organic acid is the ingredient as auxiliary oxidizing agent, is executed by making silver in indium oxide film/Ag/ indium oxide film
The effect of wet etching is aoxidized and carried out with indium oxide film.
Relative to the total weight of composition, it may include the organic acid of 30 to 70 weight %, preferably comprise 40 to 60 weights
Measure the organic acid of %.The etching speed of Yin Yin and indium oxide film in the case where the content of the organic acid is less than 30 weight %
Degree decline causes the etch uniformity (Uniformity) in substrate bad and speckle occurs, and is greater than in the content of the organic acid
Etching speed with Yin Yin and indium oxide film in the case where 70 weight % is fast and overetch phenomenon occurs in subsequent technique
In become problem drawback.
As the concrete example of the organic acid, acetic acid (acetic acid), butyric acid (butanoic acid), lemon can be enumerated
Lemon acid (citric acid), formic acid (formic acid), gluconic acid (gluconic acid), glycolic (glycolic
Acid), malonic acid (malonic acid), valeric acid (pentanoic acid) and oxalic acid (oxalic acid) etc., it is preferable to use
Glycolic.
(C) peroxide
The peroxide is the ingredient as auxiliary oxidizing agent, is executed by making in indium oxide film/Ag/ indium oxide film
The silver-colored effect for aoxidizing and carrying out the effect of wet etching and preventing Ag from adsorbing again.
Relative to the total weight of composition, it may include the peroxide of 0.1 to 10 weight %, preferably comprise 3 to 8 weights
Measure the peroxide of %.Yin Yin and indium oxide film in the case where the content of the peroxide is less than 0.1 weight %
Etching speed decline causes the etch uniformity in substrate bad and speckle occurs, and is greater than 10 weights in the content of the peroxide
In the case where amount % the etching speed with Yin Yin and indium oxide film it is fast and occur overetch phenomenon in the subsequent process at
For the drawback of problem.
As the concrete example of the peroxide, ammonium persulfate-sodium bisulfate (Oxone), sodium peroxydisulfate can be enumerated
(Sodium persulfate, SPS) and ammonium persulfate (Ammonium persulfate, APS) etc. are, it is preferable to use hydrogen persulfate
Potassium complex salt.
(D) there is the water soluble compound of nitrogen-atoms and carboxyl in an intramolecular
It is described an intramolecular have the function of nitrogen-atoms and carboxyl water soluble compound play it is as follows: that is, into
It maintains side etching variable quantity when row processing number and prevents Ag from adsorbing again.
It may include that there is nitrogen-atoms in an intramolecular described in 0.01 to 1 weight % relative to the total weight of composition
With the water soluble compound of carboxyl, preferably comprising described in 0.1 to 0.8 weight % has nitrogen-atoms and carboxyl in an intramolecular
Water soluble compound.When the content of the water soluble compound in an intramolecular with nitrogen-atoms and carboxyl is less than 0.01
When weight %, it is unable to maintain that side etching variable quantity when carrying out processing number, there is nitrogen-atoms in an intramolecular when described
When being greater than 1 weight % with the content of the water soluble compound of carboxyl, it is possible to can reduce the etch uniformity in substrate and
Part residue occurs in substrate.
As the concrete example of the water soluble compound in an intramolecular with nitrogen-atoms and carboxyl, the third ammonia can be enumerated
Acid (alanine), aminobutyric acid (aminobutyric acid), glutamic acid (glutamic acid), glycine
(glycine), diethylene triamine pentacetic acid (DTPA) (diethylenetriamine pentaacetic acid), ethylenediamine tetra-acetic acid
(Ethylenediaminetetraacetic acid), iminodiacetic acid (iminodiacetic acid), nitrilotriacetic acid
(nitrilotriacetic acid) and sarcosine (sarcosine) etc. are, it is preferable to use diethylene triamine pentacetic acid (DTPA).
(E) 3-triazole compounds
The 3-triazole compounds are played to be mentioned by adjusting Ag etching speed and reducing the CD loss (CD Loss) of pattern
The effect of nargin in high technology.
Relative to the total weight of composition, it may include the 3-triazole compounds of 0.01 to 1 weight %, preferably comprise
The 3-triazole compounds of 0.1 to 0.8 weight %.The case where the content of the 3-triazole compounds is less than 0.01 weight %
It is lower to be possible to that excessive CD loss occurs because etching speed accelerates, it is greater than 1 weight % in the content of the 3-triazole compounds
In the case where be possible to that etch residue occurs because Ag etching speed is excessively slow.
As the concrete example of the 3-triazole compounds, 1,2,3 triazoles (1,2,3 triazole), 1,2,4 can be enumerated
Triazole (1,2,4 triazole), benzotriazole (benzotriazole) and methyl benzotriazazole
(Tolyltriazole) etc., it is preferable to use benzotriazole.
Comprising azole compounds rather than in the case where the 3-triazole compounds in etchant, it is possible to
ITO precipitate occurs in etch process.
(F) water
The water can be the deionized water for semiconductor technology, preferably can be used 18M Ω/cm or more it is described go from
Sub- water.
The content of the water can be used as so that the total weight of composition is the surplus of 100 weight % to include.
Ag films etchant according to the present invention can be effectively applied to manufacture display device (OLED, LCD
Deng) when constituting by silver or the monofilm that is formed of silver alloy and by the monofilm and indium oxide film as wiring and reflectance coating
In the wet etching of multilayer film, the multilayer film is preferably formed by indium oxide film/silver or indium oxide film/silver/indium oxide film
Multilayer film.
In addition, the present invention provides a kind of engraving method using Ag films etchant according to the present invention.
The engraving method on substrate the following steps are included: i) form the monofilm formed by silver or silver alloy or by institute
State the multilayer film of monofilm and transparent conductive film composition；Ii) the selectively residual light on the monofilm or the multilayer film
Reactive material；And iii) use Ag films etchant according to the present invention to the monofilm or the multilayer film
It is etched.
It is formed in addition, the present invention provides a kind of metal pattern using Ag films etchant according to the present invention
Method.
The metal pattern forming method on substrate the following steps are included: i) form the single layer formed by silver or silver alloy
Film or the multilayer film being made of the monofilm and transparent conductive film；And ii) etched using Ag films according to the present invention
Liquid composition is etched the monofilm or the multilayer film.
In the following, the present invention is described in more detail by embodiment.But following embodiments are for further illustrating
The present invention, the scope of the present invention are not limited by following embodiments.The scope of the present invention is presented in detail in the claims, especially
Being had altered in the meaning and range being equal comprising the record with claims.In addition, in not specifically mentioned situation
Under, indicate that " % " and " part " of content is quality standard in following Examples and Comparative Examples.
Manufacture Ag films etchant involved in Examples and Comparative Examples
Referring to following [table 1] (units: weight %), Ag films involved in embodiment 1 to 9 and comparative example 1 to 12 are prepared
Etchant.The content of water is as so that the total weight of composition includes as the surplus of 100 weight %.
[table 1]
(A) inorganic acid: HNO3
(B) organic acid: glycolic (Glycolic acid, GA)
(C) peroxide: ammonium persulfate-sodium bisulfate (2KHSO5·KHSO4·K2SO4, Oxone), ammonium persulfate
(D) there is the water soluble compound of nitrogen-atoms and carboxyl: diethylene triamine pentacetic acid (DTPA) in an intramolecular
(Diethylenetriamine pentaacetic acid, DTPA), iminodiacetic acid (Iminodiacetic acid,
IDA)
(E) 3-triazole compounds: benzotriazole (Benzotriazole, BTA)
ATZ: Aminotetrazole (Aminotetrazole)
Test example 1: measurement side etching (S/E)
It is formed after the triple film coupons of ITO (tin indium oxide)/silver/ITO on substrate, to injecting type etching mode
Above-described embodiment 1 to 9 and comparative example 1 to 12 are separately added into experimental facilities (model name: ETCHER (TFT), SEMES company)
Silver-colored etchant, and temperature is set as heating up after 40 DEG C, then be held when temperature reaches 40 ± 0.1 DEG C
The etching work procedure of the row coupons takes out substrate when starting injection after being put into substrate and etching period is 80 seconds and utilizes
Deionized water is cleaned, and is then dried using hot-air drying device.
Substrate is cut off after cleaning and drying and utilizes scanning electron microscope (SEM；Model name: SU-8010, day
Vertical company's manufacture) measure section.Range measurement benchmark is etched by unilateral side to lose to measure from the end section of photoresist
It carves metal and enters the width of inside, and evaluated using following benchmark, shown the result in following [tables 2].
<evaluation criteria>
Zero: good (S/E: less than 0.50 μm)
×: bad (S/E:0.50 μm or more and do not etch)
Test example 2: measurement silver adsorbs again
It is formed after the triple film coupons of ITO/ silver/ITO on substrate, to the experimental facilities of injecting type etching mode
The silver etching of above-described embodiment 1 to 9 and comparative example 1 to 12 is separately added into (model name: ETCHER (TFT), SEMES company)
Liquid composition, and temperature is set as heating up after 40 DEG C, the examination is then executed when temperature reaches 40 ± 0.1 DEG C
The etching work procedure of print takes out substrate when starting injection after being put into substrate and etching period is 80 seconds and utilizes deionized water
It is cleaned, is then dried using hot-air drying device.
Substrate is cut off after cleaning and drying and utilizes scanning electron microscope (SEM；Model name: SU-8010, day
Vertical company's manufacture) measure section.Measurement is adsorbed onto the Ti/Al/ in the portion S/D exposed in the substrate because of the etch process
Silver particles number on the upper T i of the triple films of Ti, and evaluated using following benchmark, show the result in following [tables 2]
In.
<evaluation criteria>
Zero: good (less than 50)
×: bad (50 or more)
Test example 3: measurement ITO precipitate
It will be combined made of the ITO for dissolving 0ppm in the silver-colored etchant of embodiment 1 to 9 and comparative example 1 to 12
Composition made of the ITO of object and dissolution 500ppm is placed 24 hours, analyzes the ingredient of the precipitate generated at this time, and utilize
Following benchmark are evaluated, and are shown the result in following [tables 2].
In the case where the composition made of the ITO for dissolving 500ppm, to assume to be precipitated with process is etched
The solution of ITO precipitate.
<evaluation criteria>
Zero: precipitate not occurring
×: precipitate occurs
[table 2]
Using Ag films etchant is involved in embodiment to execute etch process, it is known that side
Etching be measured as 0.25 to 0.4 μm and do not occur silver adsorb again and ITO be precipitated problem.
On the contrary, using Ag films etchant is involved in comparative example to execute etch process, it can
Know to be not easy to adjust side etching due tos with occur excessive etching etc. of etch process and silver occurs and adsorb again and ITO
Precipitation problem.
In this way, using Ag films etchant according to the present invention to execute etch process, it can
Know be easy adjust side etching and will not occur silver adsorb again and ITO be precipitated problem.
Claims (11)
1. a kind of Ag films etchant, which is characterized in that
Relative to the total weight of composition, include:
(A) inorganic acid of 1 to 10 weight %；
(B) organic acid of 30 to 70 weight %；
(C) peroxide of 0.1 to 10 weight %；
(D) of 0.01 to 1 weight % has the water soluble compound of nitrogen-atoms and carboxyl in an intramolecular；
(E) 3-triazole compounds of 0.01 to 1 weight %；And
(F) water of surplus.
2. Ag films etchant according to claim 1, which is characterized in that
(A) inorganic acid is selected from one of group being made of nitric acid and hydrochloric acid or more.
3. Ag films etchant according to claim 1, which is characterized in that
(B) organic acid is selected from by acetic acid, butyric acid, citric acid, formic acid, gluconic acid, glycolic, malonic acid, valeric acid and grass
It is more than one of group of acid composition.
4. Ag films etchant according to claim 1, which is characterized in that
(C) peroxide is selected from one of the group being made of ammonium persulfate-sodium bisulfate, sodium peroxydisulfate and ammonium persulfate
More than.
5. Ag films etchant according to claim 1, which is characterized in that
(D) in an intramolecular there is the water soluble compound of nitrogen-atoms and carboxyl to be selected from by alanine, aminobutyric acid, paddy
What propylhomoserin, glycine, diethylene triamine pentacetic acid (DTPA), ethylenediamine tetra-acetic acid, iminodiacetic acid, nitrilotriacetic acid and sarcosine formed
It is more than one of group.
6. Ag films etchant according to claim 1, which is characterized in that
(E) 3-triazole compounds are selected from by 1,2,3 triazoles, three nitrogen of 1,2,4 triazoles, benzotriazole and methyl benzo
It is more than one of group of azoles composition.
7. Ag films etchant according to claim 1, which is characterized in that
The Ag films etchant can etch the monofilm formed by silver or silver alloy or simultaneously by the single layer
The multilayer film that film and transparent conductive film are constituted.
8. Ag films etchant according to claim 7, which is characterized in that
The transparent conductive film is in the group being made of tin indium oxide, indium zinc oxide, indium tin zinc oxide and indium gallium zinc
It is one or more of.
9. Ag films etchant according to claim 7, which is characterized in that
The multilayer film includes by transparent conductive film/silver, transparent conductive film/silver alloy, transparent conductive film/silver/transparent conductive film
Or the multilayer film that transparent conductive film/silver alloy/transparent conductive film is formed.
10. a kind of engraving method, comprising the following steps:
The monofilm formed by silver or silver alloy or the multilayer being made of the monofilm and transparent conductive film are formed on substrate
Film；
The selectively residual light reactive material on the monofilm or the multilayer film；And
The monofilm or the multilayer film are etched using composition according to claim 1.
11. a kind of metal pattern forming method, comprising the following steps:
The monofilm formed by silver or silver alloy or the multilayer being made of the monofilm and transparent conductive film are formed on substrate
Film；And
The monofilm or the multilayer film are etched using composition according to claim 1.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2018-0027948 | 2018-03-09 | ||
| KR20180027948 | 2018-03-09 |
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| Publication Number | Publication Date |
|---|---|
| CN110241423A true CN110241423A (en) | 2019-09-17 |
Family
ID=67882867
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811297108.6A Pending CN110241423A (en) | 2018-03-09 | 2018-11-01 | Ag films etchant and the engraving method and metal pattern forming method for utilizing it |
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| KR (1) | KR102639626B1 (en) |
| CN (1) | CN110241423A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114686237A (en) * | 2020-12-28 | 2022-07-01 | 三星显示有限公司 | Etching composition for silver-containing film |
| CN116926549A (en) * | 2023-09-18 | 2023-10-24 | 浙江奥首材料科技有限公司 | Ag etching solution for display panel, and preparation method and application thereof |
| CN114686237B (en) * | 2020-12-28 | 2024-04-23 | 三星显示有限公司 | Etching composition for silver-containing thin film |
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| KR101323458B1 (en) | 2007-06-15 | 2013-10-29 | 동우 화인켐 주식회사 | Etchant composition for silver |
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| CN114686237A (en) * | 2020-12-28 | 2022-07-01 | 三星显示有限公司 | Etching composition for silver-containing film |
| US11639470B2 (en) | 2020-12-28 | 2023-05-02 | Samsung Display Co., Ltd. | Etching composition for thin film containing silver, method for forming pattern and method for manufacturing a display device using the same |
| CN114686237B (en) * | 2020-12-28 | 2024-04-23 | 三星显示有限公司 | Etching composition for silver-containing thin film |
| CN116926549A (en) * | 2023-09-18 | 2023-10-24 | 浙江奥首材料科技有限公司 | Ag etching solution for display panel, and preparation method and application thereof |
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| KR102639626B1 (en) | 2024-02-23 |
| KR20190106645A (en) | 2019-09-18 |
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