CN110241391B - TCO conductive film coating device and coating process of SHJ solar cell - Google Patents
TCO conductive film coating device and coating process of SHJ solar cell Download PDFInfo
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- 238000000576 coating method Methods 0.000 title claims abstract description 40
- 239000007888 film coating Substances 0.000 title claims abstract description 25
- 238000009501 film coating Methods 0.000 title claims abstract description 25
- 239000007789 gas Substances 0.000 claims abstract description 78
- 239000001301 oxygen Substances 0.000 claims abstract description 51
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 50
- 230000008569 process Effects 0.000 claims abstract description 45
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000011248 coating agent Substances 0.000 claims abstract description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 19
- 229910003437 indium oxide Inorganic materials 0.000 claims description 18
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 17
- -1 oxygen ion Chemical class 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 9
- 239000011787 zinc oxide Substances 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000611 Zinc aluminium Inorganic materials 0.000 claims description 3
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 3
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 3
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 3
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000001105 regulatory effect Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 60
- 210000004027 cell Anatomy 0.000 description 40
- 210000002381 plasma Anatomy 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 230000001276 controlling effect Effects 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000003475 lamination Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004050 hot filament vapor deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000005002 finish coating Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a TCO conductive film coating device and a coating process of an SHJ solar cell, and relates to the technical field of solar cell manufacturing. The coating process is to use the device to carry out coating, two sets of independent process gas control systems are respectively regulated to provide differentiated oxygen flow, plasma areas with different oxygen contents are formed at two sides of the cathode device, and a workpiece is sputtered to be coated in the two plasma areas with different oxygen contents when moving along with the mechanical conveying device. The coating device and the coating process can realize differential coating design under the same target and the same equipment condition, improve the photoelectric conversion efficiency of the SHJ solar cell, have low cost and high stability, are compatible with the existing coating technology, and have wide application prospect and economic value.
Description
Technical Field
The invention relates to the technical field of solar cell preparation, in particular to a TCO conductive film coating device and a coating process of an SHJ solar cell.
Background
The solar battery power generation (photovoltaic power generation) has the characteristics of small regional difference, huge reserves, safety, no pollution, inexhaustible resources and the like, and becomes the dominant force of new energy and renewable energy technologies in the 21 st century. By 2018, the global accumulated installed quantity exceeds 400GW, and the integrated energy source is the main force of new energy.
SHJ solar cell (silicon heterojunction solar cell) is a high efficiency solar cell technology, also known as HIT R And a battery. The solar cell uses an n-type monocrystalline silicon wafer as a substrate, an intrinsic silicon-based film, an n-type doped silicon-based film lamination and an oxide transparent conductive film (TCO) are sequentially arranged on the front surface of the substrate, and an intrinsic silicon-based film, a p-type doped silicon-based film lamination and an oxide transparent conductive film (TCO) are sequentially arranged on the back surface of the substrate, so that a double-sided light receiving solar cell with a symmetrical structure is formed. In the SHJ solar cell, the excellent passivation quality of the amorphous silicon thin film allows the cell to have a very high open circuit voltage. However, since the amorphous silicon film has poor conductivity, a TCO conductive film must be coated on the surface of the amorphous silicon film to sufficiently collect photo-generated carriers transferred to the amorphous silicon film, and the TCO conductive film has a surface anti-reflection function, so that the surface reflection loss can be reduced. Therefore, the TCO conductive film is very important to improve the conversion efficiency and stability of the battery.
Currently, a magnetron sputtering coating technology is generally adopted to prepare a TCO conductive film of the SHJ solar cell. As can be seen from the basic structure of the SHJ solar cell, the front surface and the rear surface are covered with two amorphous silicon films with completely opposite conductivity types, so that the physical contact characteristics of the front surface and the rear surface are greatly different, and by adopting a uniform coating process, the mismatch of work functions of the two amorphous silicon films with different types and the TCO conductive film is greatly different, so that good ohmic contact is difficult to realize, and the output efficiency of the SHJ solar cell is seriously affected. In the prior art, the traditional coating device has a uniform gas atmosphere in a vacuum box during coating, has a single function, and cannot realize differential coating. In order to solve the above-mentioned problems, it is generally necessary to design a multi-chamber multi-target cathode structure in the device, and install TCO targets with different doping concentrations on different targets or different process conditions to prepare the TCO conductive film stack, so as to optimize the interface contact characteristics at the initial layer and the conductive characteristics at the termination layer. The method can realize good interface transmission to a certain extent, but the equipment structure and the technological process are relatively complex, so that the equipment model selection and the cost control of solar cell manufacturing enterprises are restricted, and the commercialization popularization and the application of the high-efficiency SHJ solar cell are seriously hindered.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and provides a TCO conductive film coating device and a coating process of an SHJ solar cell, which can realize differential coating design under the same target and the same equipment conditions, improve the photoelectric conversion efficiency of the SHJ solar cell, have low cost and high stability, are compatible with the prior coating technology, and have wide application prospect and economic value.
The aim of the invention is realized by the following technical scheme:
the TCO conducting film coating device of the SHJ solar battery comprises a vacuum chamber, wherein a mechanical conveying device is arranged in the vacuum chamber, a cathode structure is arranged above the mechanical conveying device, the cathode structure comprises a cathode device, the cathode device is perpendicular to the conveying direction of the mechanical conveying device, and two sets of independently controlled process gas control systems are respectively arranged on two sides of the cathode device.
Further, the cathode device comprises at least one cathode or at least one cathode group, and the cathode group is formed by arranging two or more cathodes in a twinning way.
Further, the process gas control system comprises a gas supply plate, wherein the gas supply plate is uniformly and alternately provided with a process gas homogenizing device and an oxygen homogenizing device, the process gas homogenizing device and the oxygen homogenizing device both comprise a plurality of gas supply channels processed in the gas supply plate and a plurality of gas outlet holes processed on one side of the gas supply plate, and the gas outlet holes are used for enabling the gas supply channels to be communicated with the outside of the gas supply plate.
Further, one end of the process gas homogenizing device is provided with a control valve a for controlling the on-off of a gas supply channel and the gas supply flow, and one end of the oxygen homogenizing device is provided with a control valve b for controlling the on-off of the gas supply channel and the gas supply flow.
Further, the air outlet holes are uniformly distributed along the length direction of the cathode device, and the sizes of the air outlet holes are sequentially increased along the length direction of the cathode device from one end close to the control valve a or the control valve b.
Further, the cathode device comprises a TCO target, wherein the TCO target is arranged between the cathode device and the mechanical conveying device.
A TCO conductive film coating process of an SHJ solar cell is implemented by using the TCO conductive film coating device of the SHJ solar cell, the two sets of process gas control systems are respectively adjusted to provide differentiated oxygen flow, plasma regions with different oxygen contents are formed on two sides of the cathode device, and workpieces are sequentially subjected to sputter coating in the two plasma regions with different oxygen contents when moving along with the mechanical conveying device.
Further, when the surface to be coated on the workpiece is a P-type amorphous silicon film, the plasma region firstly contacted in the transmission direction of the mechanical conveying device is set as a high oxygen ion concentration region, and the oxygen supply is more than 3%.
Further, when the surface to be coated on the workpiece is an N-type amorphous silicon film, the plasma region contacted with the transmission direction of the mechanical conveying device is set as a low oxygen ion concentration region, and oxygen is supplied to the plasma region by 3<%.
Furthermore, when the coating device is arranged into a multi-cathode group, the oxygen ion concentration of the plasma region in the transmission direction of the mechanical conveying device can be continuously changed within 0-50%, and the material elements of the plasma region can be continuously changed within 1-N.
Further, the TCO conductive film coating process of the SHJ solar cell is suitable for coating one or more of indium oxide, tin oxide, cadmium oxide, tungsten oxide, molybdenum oxide, vanadium oxide, titanium oxide, tin-doped indium oxide, aluminum-doped indium oxide, tungsten-doped indium oxide, titanium-doped indium oxide, cesium-doped indium oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide and aluminum-doped gallium zinc oxide.
The beneficial effects of the invention are as follows:
according to the TCO conductive film coating device of the SHJ solar cell, the process gas control systems are arranged on two sides of the cathode device of the vacuum chamber, each process gas control system comprises an oxygen gas homogenizing device and a process gas homogenizing device which are independently controlled, so that the conventional cathode gas supply form is changed in the coating process, the special requirements of P-type and N-type amorphous silicon films in the SHJ solar cell on the TCO conductive film are combined with the regional difference characteristics of oxygen plasmas in the cathode region, the differential coating design under the same target and same equipment condition can be realized, on the premise of keeping the mass production efficiency and the yield, TCO conductive film stacks with different functional layers are continuously prepared, the effective work function of the film stack interface is regulated and controlled by using the oxygen plasmas, the contact characteristics of the amorphous silicon film/TCO interface are optimized, and the photoelectric conversion efficiency of the SHJ solar cell is maximized.
The process gas control system mainly comprises a gas supply plate, wherein the gas supply plate is uniformly and alternately provided with a process gas homogenizing device and an oxygen homogenizing device. The air homogenizing device comprises a plurality of air supply channels processed in the air supply plate and a plurality of air outlet holes processed on one side of the air supply plate. The structure is simple, and the manufacturing cost is low. The end part of the gas homogenizing device is provided with a control valve, and the flow control of process gas and oxygen in the gas homogenizing device is realized through the control valve, so that the differentiated gas supply mode is realized, and the operation is simple. The air outlets are uniformly distributed along the length direction of the cathode device, and the aperture is sequentially increased from one end close to the control valve, so that the air discharged by each air outlet in the same air homogenizing device is relatively uniform, and the uniform film coating of the workpiece is ensured.
The invention has the advantages of low cost and high stability, is completely compatible with the TCO conductive film coating method of the existing SHJ solar cell, is not only suitable for the SHJ solar cell, but also suitable for coating other photoelectric semiconductor devices with special requirements on the TCO conductive film, and has wide application prospect and economic value in the field of solar cell preparation.
Drawings
Fig. 1 is a schematic diagram of a basic structure of a SHJ solar cell according to the prior art;
FIG. 2 is a schematic structural diagram and a schematic working diagram of a TCO conductive film coating device for SHJ solar cells according to the present invention;
fig. 3 is a schematic structural view of a cathode structure.
Detailed Description
The technical solution of the present invention will be described in further detail with reference to the accompanying drawings, but the scope of the present invention is not limited to the following description.
As shown in fig. 1, the SHJ solar cell in the prior art is shown. During manufacturing, the solar cell takes an n-type monocrystalline silicon wafer 101 as a substrate, and firstly carries out surface texturing and chemical cleaning on the n-type monocrystalline silicon wafer to form a clean pyramid light limiting structure; then depositing an intrinsic silicon-based film 102 and an n-type doped silicon-based film 103 lamination on the front surface of the silicon wafer 101 by using methods such as plasma chemical vapor deposition (PECVD), metal thermal catalytic chemical vapor deposition (Cat-CVD), hot wire chemical vapor deposition (Hot-wire CVD) and the like, and depositing an intrinsic silicon-based film 102 and a p-type doped silicon-based film 104 lamination on the back surface of the silicon wafer; then depositing an oxide transparent conductive film (TCO) 105 on the stack of n-doped silicon-based film 103 and p-doped silicon-based film 104; and then the metal electrode 106 is manufactured by a metallization technology such as screen printing or electroplating, so as to form the double-sided light-receiving solar cell with a symmetrical structure.
In the SHJ solar cell, the physical contact characteristics of the n-type doped silicon-based film 103 stack and the p-type doped silicon-based film 104 stack are very different, the work function mismatch of the two and the oxide transparent conductive film (TCO) 105 is very different, good ohmic contact is difficult to realize, and the output efficiency of the SHJ solar cell is seriously affected.
In the prior art, the coating process of the TCO conductive film is generally completed by a vacuum coating machine, and mainly comprises a vacuum chamber and an auxiliary air extraction system, wherein when the coating of the TCO conductive film is carried out, a cathode target material is firstly arranged in the vacuum chamber, a workpiece to be coated is placed, and a vacuum environment is created by the auxiliary air extraction system; and then argon is filled into the vacuum chamber, and then glow discharge effect is generated by electrifying a bombardment electrode, so that ionized argon becomes argon ions to bombard the surface of the target, and target atoms are bombarded out and subsided to the surface of the workpiece to finish coating. In order to realize the differential coating of the TCO conductive film, the existing vacuum coating machine generally needs to design a multi-target cathode structure in equipment, and TCO targets with different doping concentrations are installed on different targets to prepare a TCO conductive film stack, so that the interface contact characteristic is optimized at an initial layer, and the conductive characteristic is optimized at a termination layer. The equipment structure and the technological process are complex, the coating cost is high, and the commercialization popularization and the application of the high-efficiency SHJ solar cell are seriously hindered.
In order to solve the above problems, the present invention provides a TCO conductive film coating apparatus and a coating process for SHJ solar cells, wherein the main structure of the apparatus is similar to that of a vacuum coating machine in the prior art, and the specific structure is shown in fig. 2, and the apparatus includes a vacuum chamber 301, a mechanical conveying device 306 is disposed in the vacuum chamber 301, and a cathode structure is disposed above the mechanical conveying device 306. The mechanical conveying device 306 is a conventional conveying device such as a conveyor belt, and is used to drive the workpiece to move in the coating area. The cathode structure comprises a cathode device 210, the cathode device 210 is arranged perpendicular to the transport direction of the mechanical transport device 306, and a TCO target 302 is arranged between the cathode device 201 and the mechanical transport device 306. Two sets of independently controlled process gas control systems are provided on each side of the cathode assembly 210.
The coating process of the TCO conductive film implemented by the device is improved from the traditional sputtering coating process, when coating is implemented, the two sets of process gas control systems are respectively adjusted to provide differentiated oxygen flow, plasma regions with different oxygen contents are formed at two sides of the cathode device 210, and the workpiece is sputtered and coated in the two plasma regions with different oxygen contents successively when moving along with the mechanical conveying device 306. In practice, the solar cell piece 304 is moved forward by the carrier plate 305 under the drive of the mechanical conveying device 306. Performing surface modification treatment on the amorphous silicon surface of the silicon wafer by oxygen ions in a plasma region which firstly enters the workpiece 304, and forming an oxygen-enriched or oxygen-deficient TCO film seed layer at the initial stage of film growth, so as to regulate and control the interface contact characteristic of the TCO film and the amorphous silicon film; oxygen ions in the plasma region that enters behind the article 304 regulate the surface properties of the TCO film so that the TCO forms a good ohmic contact with the metal electrode. By this process, a TCO stack 303 of natural seed layer, transition layer and main guiding layer can be formed with better physical and electrical properties when the TCO conductive film is coated.
When the method is implemented, the process gas control system comprises a gas supply plate, wherein the gas supply plate is uniformly and alternately provided with a process gas homogenizing device and an oxygen homogenizing device, and the process gas homogenizing device and the oxygen homogenizing device both comprise a plurality of gas supply channels processed in the gas supply plate and a plurality of gas outlet holes processed on one side of the gas supply plate, and the gas outlet holes are used for enabling the gas supply channels to be communicated with the outside of the gas supply plate. Specifically, the process gas homogenizing device 232 and the oxygen homogenizing device 222 are disposed on the side of the plasma region contacting the workpiece, and the process gas homogenizing device 231 and the oxygen homogenizing device 221 are disposed on the side of the plasma region contacting the workpiece, and the structure is shown in fig. 3, and fig. 3 is a schematic bottom view of the cathode device 210 in fig. 2. In implementation, the process gas homogenizing device is filled with a mixed gas of argon and water vapor or a mixed gas of argon and hydrogen, and the oxygen homogenizing device is filled with oxygen, and the gases are discharged through the air outlet holes after flowing through the corresponding air supply channels respectively. One end of the process gas homogenizing device is provided with a control valve a233 for controlling the on-off and air supply flow of an air supply channel, one end of the oxygen homogenizing device 221,222 is provided with a control valve b223 for controlling the on-off and air supply flow of the air supply channel, and the amount of process gas or oxygen in each homogenizing device can be respectively controlled by controlling each valve a233 and valve b223, so that differentiated oxygen flow is obtained, and the process is realized.
In specific implementation, the working air pressure range for preparing the TCO conductive film is 0.1-2 Pa, and the power density is 1-20KW/m. When the surface to be coated on the workpiece is a P-type amorphous silicon film, the plasma region firstly contacted in the transmission direction of the mechanical conveying device 306 is set to be a high oxygen ion concentration region, and the oxygen supply is more than 3%, so that the work function of the TCO conductive film can be increased, the work function mismatch phenomenon of the P-type amorphous silicon film/TCO interface is improved, and good ohmic contact is obtained. When the surface to be coated on the workpiece is an N-type amorphous silicon film, the plasma region contacted with the transmission direction of the mechanical conveying device 306 is set as a low oxygen ion concentration region, and the oxygen supply is less than 3%, so that the work function of the TCO conductive film can be reduced, the work function mismatch phenomenon of the N-type amorphous silicon film/TCO interface is improved, and good ohmic contact is obtained. By means of differentiated air supply mode, differential film plating design under the same target material and the same equipment condition can be realized, on the premise of maintaining mass production efficiency and yield, TCO conductive film stacks with different functional layers are continuously prepared, the effective work function of a film stack interface is regulated and controlled by oxygen plasma, the contact characteristic of an amorphous silicon film/TCO interface is optimized, and the photoelectric conversion efficiency of the SHJ solar cell is maximized.
Further, the air outlets are uniformly distributed along the length direction of the cathode device 210, the sizes of the air outlets sequentially increase from one end close to the control valve a233 or the control valve b223 along the length direction of the cathode device 210, and the air outlets in the same air homogenizing device can be relatively uniform in exhaust gas by performing specific design on the sizes of the air outlets, so that uniform film coating of the workpiece is ensured.
Further, the cathode device 210 includes at least one cathode or at least one cathode set, and the cathode set is formed by arranging two or more cathodes in a twinning manner. The cathode sets arranged in rows extend the length of the cathode device 210, and when the cathode device adopts twin-arrangement cathode sets, a proper material can be selected for each cathode, so that the material elements of the plasma region can be continuously changed from 1 to N, and the lamination of a plurality of different TCO materials is realized. The process gas control systems are arranged on two sides of each cathode, and through regulating and controlling the process gas control systems of the cathodes, the continuous gradual change of the oxygen ion concentration in a film coating area can be realized, so that the oxygen ion concentration in a plasma area along the transmission direction of the mechanical conveying device 306 can be continuously changed by 0-50%, and better film coating effect can be obtained by combining the selection of film coating materials.
Furthermore, the cathode is a planar cathode or a selective cathode, the cathode group is a planar cathode, a rotary cathode or a combination of the planar cathode and the rotary cathode, and the coating process is completely compatible with the TCO conductive film coating method of the SHJ solar cell in the prior art, and is not only applicable to the SHJ solar cell, but also applicable to other photoelectric semiconductor device coating films with special requirements on the TCO conductive film, and is applicable to one or more coating films including indium oxide, tin oxide, cadmium oxide, tungsten oxide, molybdenum oxide, vanadium oxide, titanium oxide, tin-doped indium oxide, aluminum-doped indium oxide, tungsten-doped indium oxide, titanium-doped indium oxide, cesium-doped indium oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide and aluminum-doped gallium-zinc oxide. Has wide application prospect and economic value in the technical field of solar cell preparation.
The foregoing is merely a preferred embodiment of the invention, and it is to be understood that the invention is not limited to the form disclosed herein but is not to be construed as excluding other embodiments, but is capable of numerous other combinations, modifications and environments and is capable of modifications within the scope of the inventive concept, either as taught or as a matter of routine skill or knowledge in the relevant art. And that modifications and variations which do not depart from the spirit and scope of the invention are intended to be within the scope of the appended claims.
Claims (8)
1. The TCO conductive film coating process of the SHJ solar cell is characterized in that coating is carried out by utilizing a TCO conductive film coating device, wherein the TCO conductive film coating device comprises a vacuum chamber (301), a mechanical conveying device (306) is arranged in the vacuum chamber (301), a cathode structure is arranged above the mechanical conveying device (306), the cathode structure comprises a cathode device (210), the cathode device (210) is arranged perpendicular to the conveying direction of the mechanical conveying device (306), and two sets of independently controlled process gas control systems are respectively arranged on two sides of the cathode device (210);
providing differentiated oxygen flow rates on two sides of a cathode device (210), forming plasma regions with different oxygen contents on two sides of the cathode device (210), and sputtering a film coating on a workpiece in the two plasma regions with different oxygen contents successively, wherein the TCO conductive film comprises one or more films of indium oxide, tin oxide, cadmium oxide, tungsten oxide, molybdenum oxide, vanadium oxide, titanium oxide, tin-doped indium oxide, aluminum-doped indium oxide, tungsten-doped indium oxide, titanium-doped indium oxide, cesium-doped indium oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide and aluminum-doped gallium zinc oxide;
when the surface to be coated on the workpiece is a P-type amorphous silicon film, a plasma region firstly contacted with the mechanical conveying device (306) in the transmission direction is set as a high oxygen ion concentration region, the oxygen supply is more than 3 percent, and when the surface to be coated on the workpiece is an N-type amorphous silicon film, a plasma region firstly contacted with the mechanical conveying device (306) in the transmission direction is set as a low oxygen ion concentration region, and the oxygen supply is less than 3 percent.
2. The process for coating a TCO conductive film on an SHJ solar cell according to claim 1, wherein the power density of the TCO conductive film is 1-20KW/m.
3. The process for coating a TCO conductive film on an SHJ solar cell according to claim 1, wherein the working air pressure of the TCO conductive film is in the range of 0.1 Pa to 2Pa.
4. A process for coating a TCO conductive film of an SHJ solar cell according to any one of claims 1 to 3, characterized in that the cathode device (201) comprises at least one cathode or at least one cathode set, the cathode set being arranged in a twinning arrangement of two or more cathodes.
5. A TCO conductive film coating process for SHJ solar cells according to any one of claims 1 to 3, wherein the process gas control system includes a gas supply plate, and process gas homogenizing devices (231, 232) and oxygen homogenizing devices (221, 222) are uniformly and alternately arranged on the gas supply plate, and each of the process gas homogenizing devices (231, 232) and the oxygen homogenizing devices (221, 222) includes a plurality of gas supply channels processed in the gas supply plate and a plurality of gas outlet holes processed on one side of the gas supply plate, and the gas outlet holes are used for communicating the gas supply channels with the outside of the gas supply plate.
6. The TCO conductive film coating process of SHJ solar cell according to claim 5, wherein one end of the process gas homogenizing device (231, 232) is provided with a control valve a (233) for controlling on-off and gas supply flow of a gas supply channel thereof, and one end of the oxygen homogenizing device (221, 222) is provided with a control valve b (223) for controlling on-off and gas supply flow of a gas supply channel thereof.
7. The process of claim 6, wherein the gas outlet holes are uniformly distributed along the length direction of the cathode device (210), and the size of the gas outlet holes increases from one end near the control valve a (233) or the control valve b (223) along the length direction of the cathode device (210).
8. A process for coating a TCO conductive film of an SHJ solar cell according to any of claims 1 to 3, further comprising a TCO target (302), said TCO target (302) being disposed between said cathode means (210) and said mechanical transport means (306).
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102477547A (en) * | 2010-11-25 | 2012-05-30 | 财团法人工业技术研究院 | Plasma processing apparatus |
| DE102011075851A1 (en) * | 2011-05-13 | 2012-11-15 | Von Ardenne Anlagentechnik Gmbh | Reactive deposition of oxides e.g. aluminum oxide of a pipe magnetron arrangement in vacuum coating plants, by guiding substrate in longitudinal extension of vacuum coating plant at pipe magnetron arrangement |
| DE102014112669A1 (en) * | 2014-07-18 | 2016-01-21 | Von Ardenne Gmbh | Magnetron arrangement, processing arrangement and method for coating a substrate |
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| US20060118406A1 (en) * | 2004-12-08 | 2006-06-08 | Energy Photovoltaics, Inc. | Sputtered transparent conductive films |
| US10156762B2 (en) * | 2009-03-31 | 2018-12-18 | View, Inc. | Counter electrode for electrochromic devices |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102477547A (en) * | 2010-11-25 | 2012-05-30 | 财团法人工业技术研究院 | Plasma processing apparatus |
| DE102011075851A1 (en) * | 2011-05-13 | 2012-11-15 | Von Ardenne Anlagentechnik Gmbh | Reactive deposition of oxides e.g. aluminum oxide of a pipe magnetron arrangement in vacuum coating plants, by guiding substrate in longitudinal extension of vacuum coating plant at pipe magnetron arrangement |
| DE102014112669A1 (en) * | 2014-07-18 | 2016-01-21 | Von Ardenne Gmbh | Magnetron arrangement, processing arrangement and method for coating a substrate |
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