CN110239117B - Quantum dot film and manufacturing method thereof - Google Patents
Quantum dot film and manufacturing method thereof Download PDFInfo
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- CN110239117B CN110239117B CN201910483273.9A CN201910483273A CN110239117B CN 110239117 B CN110239117 B CN 110239117B CN 201910483273 A CN201910483273 A CN 201910483273A CN 110239117 B CN110239117 B CN 110239117B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C71/00—After-treatment of articles without altering their shape; Apparatus therefor
- B29C71/04—After-treatment of articles without altering their shape; Apparatus therefor by wave energy or particle radiation, e.g. for curing or vulcanising preformed articles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D7/00—Producing flat articles, e.g. films or sheets
- B29D7/01—Films or sheets
Abstract
The invention discloses a manufacturing method of a quantum dot film, which comprises the following steps: providing a quantum dot base film; step two, carrying out electron beam treatment on the quantum dot base film; and step three, forming a barrier layer on the quantum dot base film. The method can well prolong the service life of the quantum dot film, simplify the manufacturing process of the barrier layer and improve the yield of products. The invention also discloses a quantum dot film.
Description
Technical Field
The application belongs to the field of nano materials, and particularly relates to a quantum dot film and a manufacturing method thereof.
Background
The quantum dots have excellent optical properties, and can be applied to the fields of display, illumination and the like. When the quantum dot material is used for display, the color gamut and other aspects are obviously improved.
The quantum dot material is often formulated into quantum dot ink, and the required quantum dot thin film is formed by printing, transfer printing, spin coating and the like.
However, the quantum dot material is very susceptible to oxygen, water vapor and other factors in the external environment, so that the stability of the quantum dot material is poor, and the requirement of the display and illumination fields on the stability of the quantum dot film cannot be met.
Now, a barrier layer is usually added on the quantum dot film to block oxygen and water vapor, so as to improve the stability of the quantum dot film. At present, when a barrier layer is formed on a quantum dot film, a layer of organic glue is generally coated on the quantum dot film, and the organic glue is generally photo-curing glue or thermosetting glue.
However, both of the photo-curing method and the thermal curing method cause a large damage to the quantum dot matrix film. For example, when the organic glue is cured by thermal curing, the quantum dot matrix film is naturally heated, and the quantum dots in the quantum dot matrix film are easily quenched. In addition, when the organic glue is cured by means of photo-curing, for example, UV curing, the quantum dots in the quantum dot matrix film are easily excited by ultraviolet rays (UV light), and thus the quantum dots in the quantum dot matrix film are also destroyed.
Furthermore, the lifetime of the quantum dot film with the barrier layer in the prior art is not ideal.
Therefore, there is a need for a method suitable for forming a barrier layer on a quantum dot film without damaging the quantum dot film.
Disclosure of Invention
In view of the above technical problems, the present application provides a method for forming a barrier layer on a quantum dot base film, which can well improve the lifetime of the quantum dot film, simplify the manufacturing process of the barrier layer, and improve the yield of products.
The manufacturing method of the quantum dot film comprises the following steps: providing a quantum dot base film; step two, carrying out electron beam treatment on the quantum dot base film; and step three, forming a barrier layer on the quantum dot base film.
Preferably, the electron beam treatment time of the quantum dot base film in the step two is 0.1 to 5 seconds.
Preferably, before the step of subjecting the quantum dot based film to the electron beam treatment, the method further comprises: and forming an inorganic barrier layer on the quantum dot base film.
Preferably, the inorganic barrier layer includes titanium oxide nanoparticles, aluminum oxide nanoparticles or silicon oxide nanoparticles.
Preferably, the quantum dot-based film is a quantum dot film of an acrylate system, and before the step one of providing the quantum dot-based film, the method further includes: and (3) preparing the quantum dot film of the acrylate system.
Preferably, the quantum dot film for preparing the acrylate system comprises: step a, providing a quantum dot material and acrylic resin; b, heating the acrylic resin to enable the acrylic resin to be in a molten state; step c, mixing the quantum dot material and the acrylic resin to form a mixture containing the quantum dot material and the acrylic resin; d, cooling the mixture to enable the acrylic resin to be crystallized and the quantum dot materials to be dispersed in the acrylic resin crystallization area; and e, preparing the quantum dot base film.
Preferably, before the step of subjecting the quantum dot based film to the electron beam treatment, the method further comprises: and coating acrylic ester glue on the quantum dot base film.
Preferably, the acrylate glue comprises acrylic resin and an acrylate monomer, and the acrylate glue does not contain an initiator.
Preferably, the step of subjecting the quantum dot base film to electron beam processing further includes: and carrying out electron beam treatment on the acrylate glue.
The application also provides a quantum dot film, and the barrier layer is prepared by the manufacturing method of the quantum dot film.
In this patent application, handle quantum dot base membrane through electron beam (EBeam), can destroy quantum dot base membrane surface in the twinkling of an eye for the disconnection of the double bond carbon chain in the surface, the double bond carbon chain of disconnection is polymerized again and is made up into compact cross-linked structure, this cross-linked structure forms the barrier layer on quantum dot base membrane surface, separation steam and oxygen that this barrier layer can be fine, and this barrier layer can also provide fine ageing resistance and mechanical properties to this quantum dot base membrane.
Meanwhile, the barrier layer is directly formed on the quantum dot base film without other complex processes such as attaching, transferring or printing, and the like, thereby greatly simplifying the manufacturing process of forming the barrier layer on the quantum dot base film.
In addition, compared with the prior art, the manufacturing method of the quantum dot film does not generate heat or light, so that the quantum dots in the quantum dot base film are not affected or damaged. Because the electron beam bombards the quantum dot base film in a very short time, the double bonds on the surface of the quantum dot base film are directly disconnected, molecular or atomic vibration cannot be generated continuously, heating and temperature rising cannot occur, meanwhile, the electron beam irradiates the quantum dot base film in a very short time, the electron beam cannot penetrate into the inside of the quantum dot base film, quantum dots in the quantum dot base film cannot be excited, and therefore influence and damage to the quantum dots cannot be caused.
Drawings
Fig. 1 is a flow chart of a method for fabricating a quantum dot film according to an embodiment of the present disclosure;
FIG. 2 is a flow chart of a method of fabricating a quantum dot film according to another embodiment of the present application;
Detailed Description
The technical solutions in the examples of the present application will be described in detail below with reference to the embodiments of the present application. It should be noted that the described embodiments are only some embodiments of the present application, and not all embodiments.
In order to protect the quantum dot film from being affected by water, oxygen and other factors in the external environment, a barrier layer is formed on the quantum dot film at present, so that oxygen and water vapor are blocked, and the stability of the quantum dot film is improved. The barrier layer is generally formed by depositing glue on the quantum dot film and then curing the glue. For example, the ink can be deposited on the quantum dot material in an ink-jet printing technology mode, so that oxygen and water vapor are well blocked, and the stability of the quantum dot film is improved. At present, when a barrier layer is formed on a quantum dot film, a layer of organic glue is generally coated on the quantum dot film, and the organic glue is generally photo-curing glue or thermosetting glue.
However, both the photo-curing method and the thermal curing method cause great damage to the quantum dot matrix film. For example, when the organic glue is cured by thermal curing, the quantum dot matrix film is naturally heated, and the quantum dots in the quantum dot matrix film are easily quenched. In addition, when the organic glue is cured by means of photo-curing, for example, UV curing, the quantum dots in the quantum dot matrix film are easily excited by ultraviolet rays (UV light), and thus the quantum dots in the quantum dot matrix film are also destroyed.
In the method, the quantum dot base film is processed by the electron beams, and the quantum dot film is manufactured by the method, so that the quantum dots in the quantum dot base film are not influenced and damaged due to the fact that heat and light are not generated. Because the electron beam bombards the quantum dot base film in a very short time, the quantum dot base film can not be heated, and simultaneously, the electron beam irradiates the quantum dot base film in a very short time, and can not penetrate into the inside of the quantum dot base film, and can not excite the quantum dots in the quantum dot base film, thereby not influencing and damaging the quantum dots.
As shown in fig. 1, which is a flowchart of a method for manufacturing a quantum dot film according to an embodiment of the present application, the method for manufacturing a quantum dot film includes:
step 101, providing a quantum dot base film;
step 102, performing electron beam processing on the quantum dot base film;
the quantum dot base film is processed through the electron beams, the surface of the quantum dot base film can be damaged instantly, double-bond carbon chains in the surface of the quantum dot base film are disconnected, the disconnected double-bond carbon chains are polymerized again to form a compact cross-linked structure, the cross-linked structure forms a blocking layer on the surface of the quantum dot base film, the blocking layer can well block water vapor and oxygen, and the blocking layer can also provide good ageing resistance and mechanical properties for the quantum dot base film.
It should be noted that the electron beam treatment process itself is a prior art, but the electron beam treatment process has not been applied to the quantum dot film, and the electron beam treatment is mainly used for surface modification of metals or other materials. The electron beam treatment is to accelerate electrons by an accelerating voltage, bombard the surface of a metal object to be processed to melt the surface of the metal object, and the like, and at present, the electron beam treatment is never thought to be applied to a quantum dot film with a nano-scale fine structure.
Step 103, forming a barrier layer on the quantum dot base film.
The barrier layer is directly formed on the quantum dot base film without other complex processes such as attaching, transferring or printing, thereby greatly simplifying the manufacturing process of forming the barrier layer on the quantum dot film.
The time for performing the electron beam treatment on the quantum dot barrier layer is determined by the thickness of the quantum dot base film and the thickness of the glue applied on the quantum dot base film. For example, if the quantum dot base film is thick or the quantum dot base film is coated with a thick glue, the electron beam processing time is naturally longer. However, in combination with the thickness of the actual quantum dot based film being generally 10 to 500 μm, the electron beam treatment time is generally between 0.1 to 5 seconds, i.e., in fact, the electron beam treatment time is relatively very short. For example, in one embodiment of the present application, the quantum dot based film has a thickness of 50 μm and the electron beam treatment time is 1 second.
As shown in fig. 2, a flow chart of a method for manufacturing a quantum dot film according to another embodiment of the present application is shown, and the method includes:
step 201, a quantum dot based film is provided.
In this embodiment, the quantum dot base film is a quantum dot film of an acrylate system, and the quantum dot film of the acrylate system includes quantum dots and an acrylic resin.
In another embodiment of the present application, the method for manufacturing a quantum dot film further includes: and (3) preparing the quantum dot film of the acrylate system. The quantum dot film for preparing the acrylate system comprises: step a, providing a quantum dot material and acrylic resin; b, heating the acrylic resin to enable the acrylic resin to be in a molten state; step c, mixing the quantum dot material and the acrylic resin to form a mixture containing the quantum dot material and the acrylic resin; d, cooling the mixture to enable the acrylic resin to be crystallized and the quantum dot materials to be dispersed in the acrylic resin crystallization area; and e, preparing the quantum dot base film.
At step 202, an inorganic barrier layer is deposited on the quantum dot based film.
The inorganic barrier layer may include titanium oxide nanoparticles, silicon oxide nanoparticles, aluminum oxide nanoparticles, or the like, and may be formed by vapor deposition. The formation of the inorganic barrier layer is well known to those skilled in the art and will not be described herein.
Step 203, a layer of acrylate glue is coated on the quantum dot base film deposited with the inorganic barrier layer.
In the prior art, a UV glue or a thermal curing glue is generally coated on a quantum dot base film, but in the embodiment, only an acrylic glue is coated, and the acrylic glue includes acrylic resin, an acrylic monomer and the like. The acrylate glue can be similar to components in UV glue or thermosetting glue in the prior art, but the acrylate glue does not contain an initiator, namely the acrylate glue can be regarded as a glue system without a photoinitiator or a thermal initiator in the existing glue. In the embodiment, the acrylate glue is only processed by electron beams, and does not need light curing treatment or heat curing treatment, so that various initiators are not needed in the acrylate glue.
And 204, performing electron beam treatment on the acrylate glue on the quantum dot base film.
In this embodiment, the quantum dot base film coated with the acrylate glue is subjected to electron beam treatment, the electron beam treatment is performed on the acrylate glue, the treatment time is 1 second, in the electron beam treatment process, double bond carbon chains of resin or monomer and the like in the acrylate glue are broken and broken, and the broken double bond carbon chains are crosslinked and polymerized again, so that the noncrystallization solidification of the acrylate glue is completed. After being cured, the acrylate glue can realize good water vapor and oxygen blocking effect.
In step 205, an inorganic barrier layer and an organic barrier layer are finally formed on the quantum dot base film.
The barrier layer formed by the manufacturing method does not need an additional UV light irradiation process or a heating process, the process steps of forming the barrier layer on the quantum dot film are simplified, and the barrier layer is formed by directly processing the quantum dot film, so that additional bonding processes such as bonding, stamping and the like are not needed. The barrier layer finally formed on the quantum dot base film can also provide good aging resistance and mechanical properties.
In addition, the present application also provides a quantum dot film obtained by the method for manufacturing a quantum dot film according to the present application, which is obtained by processing a quantum dot base film by an electron beam. The method specifically comprises the following steps: providing a quantum dot base film; step two, carrying out electron beam treatment on the quantum dot base film; and step three, forming a barrier layer on the quantum dot base film.
In one embodiment of the present application, the quantum dot film is obtained by a method for manufacturing a quantum dot film according to the present application, in which a quantum dot base film is directly treated by an electron beam.
In another embodiment of the present invention, the quantum dot film is formed by the method for manufacturing a quantum dot film according to the present invention, wherein the method for manufacturing a quantum dot film comprises coating a layer of acrylate glue on a quantum dot base film, and then performing electron beam treatment on the acrylate glue on the quantum dot base film.
Comparative analysis was carried out by four examples below:
the quantum dot film in the embodiments is exemplified by a quantum dot light conversion film (QDEF-based film).
Example 1: a common quantum dot base film without any treatment;
example 2: directly processing the quantum dot base film by Electron Beam (EB);
example 3: forming a barrier layer on the quantum dot base film by UV curing;
example 4: and coating acrylate glue on the quantum dot base film and then carrying out Electron Beam (EB) treatment.
The comparative table is as follows:
the four examples were all carried out under ageing conditions at 60 ℃ and 90% RH with 3500nits blue excitation light, and the brightness maintenance after 24 hours ageing was recorded. The conditions during the test were 447nm/1000nits blue light, and the test apparatus was a PRO670 spectrometer. The final luminance maintenance results were, example 4 > example 3 > example 2 > example 1. Example 1 the brightness maintenance ratio of example 1 is the smallest because it is the completely bare quantum dot base film, i.e., the completely bare quantum dot base film of example 1 is the most aged; in the embodiment 2, the electron beam treatment is performed, so that the brightness maintenance rate of the quantum dot base film is improved; example 3 is a barrier layer formed by UV curing on a quantum dot base film, and since a barrier layer is additionally coated on a quantum dot base film, it is certain that the luminance maintenance rate is improved; finally, in embodiment 4, the quantum dot base film is coated with the acrylate glue and then subjected to Electron Beam (EB) treatment to form the barrier layer, and the acrylate glue is cured by the electron beam treatment, so that the luminance maintenance rate of the quantum dot film is the highest. From a comparison of the above four examples, it is evident that the barrier layer formed by electron beam treatment is superior to the barrier layer not subjected to electron beam treatment. The method can better improve the ageing resistance of the quantum dot film.
To sum up, this patent application handles quantum dot base film through electron beam (EBeam), forms the barrier layer on quantum dot base film surface, and this barrier layer blocks water and hinders the performance of oxygen and obtain promoting to this barrier layer has still improved quantum dot membrane ageing resistance. Meanwhile, the barrier layer is formed on the quantum dot base film without other complex processes such as attaching, transferring or printing, and the like, so that the manufacturing process for forming the barrier layer on the quantum dot film is greatly simplified. In addition, the quantum dot film does not generate heat or light in the manufacturing process, so that the quantum dots in the quantum dot base film cannot be influenced or damaged, and the product yield of the quantum dot film is improved.
Although the present disclosure has been described and illustrated in greater detail by the inventors, it should be understood that modifications and/or alterations to the above-described embodiments, or equivalent substitutions, will be apparent to those skilled in the art without departing from the spirit of the disclosure, and that no limitations to the present disclosure are intended or should be inferred therefrom.
Claims (10)
1. A method for manufacturing a quantum dot film, the method comprising:
providing a quantum dot base film, wherein the quantum dot base film contains quantum dots;
step two, carrying out electron beam treatment on the quantum dot base film, disconnecting double bonds on the surface of the quantum dot base film, and polymerizing again to form a compact cross-linked tissue;
and step three, forming a barrier layer on the quantum dot base film by the cross-linked tissue.
2. The method of claim 1, wherein the step of subjecting the quantum dot base film to the electron beam treatment is performed for 0.1 to 5 seconds.
3. The method of claim 1, wherein before the step of subjecting the quantum dot base film to the electron beam treatment, the method further comprises:
and forming an inorganic barrier layer on the quantum dot base film.
4. The method of claim 3, wherein the inorganic barrier layer comprises titanium oxide nanoparticles, aluminum oxide nanoparticles, or silicon oxide nanoparticles.
5. The method of claim 1, wherein the quantum dot matrix film is an acrylate-based quantum dot film, and before the step of providing the quantum dot matrix film, the method further comprises:
and (3) preparing the quantum dot film of the acrylate system.
6. The method of claim 5, wherein the step of preparing the quantum dot film of the acrylate system comprises:
step a, providing a quantum dot material and acrylic resin;
b, heating the acrylic resin to enable the acrylic resin to be in a molten state;
step c, mixing the quantum dot material and the acrylic resin to form a mixture containing the quantum dot material and the acrylic resin;
d, cooling the mixture to enable the acrylic resin to be crystallized and the quantum dot materials to be dispersed in the acrylic resin crystallization area;
and e, preparing the quantum dot base film.
7. The method of claim 5, wherein before the step of subjecting the quantum dot base film to the electron beam treatment, the method further comprises:
and coating acrylic ester glue on the quantum dot base film.
8. The method of claim 7, wherein the acrylate glue comprises an acrylic resin and an acrylate monomer, and the acrylate glue does not contain an initiator.
9. The method of claim 7, wherein the step of subjecting the quantum dot base film to electron beam treatment further comprises:
and carrying out electron beam treatment on the acrylate glue.
10. A quantum dot film, wherein the quantum dot film is produced by the method for producing a quantum dot film according to claim 1 to 9.
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| CN110804199A (en) * | 2019-09-26 | 2020-02-18 | 苏州星烁纳米科技有限公司 | Preparation method of quantum dot film, quantum dot film and backlight module |
| CN114163994B (en) * | 2021-12-30 | 2023-09-19 | 宁波东旭成新材料科技有限公司 | Preparation method of quantum dot film |
| CN115257117A (en) * | 2022-07-29 | 2022-11-01 | 重庆翰博显示科技研发中心有限公司 | Quantum dot film and preparation method thereof |
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| CN105431477A (en) * | 2013-07-24 | 2016-03-23 | 3M创新有限公司 | Adhesive barrier film construction |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105431477A (en) * | 2013-07-24 | 2016-03-23 | 3M创新有限公司 | Adhesive barrier film construction |
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