CN110238513B - MiniLED wafer cutting method and device - Google Patents
MiniLED wafer cutting method and device Download PDFInfo
- Publication number
- CN110238513B CN110238513B CN201910349512.1A CN201910349512A CN110238513B CN 110238513 B CN110238513 B CN 110238513B CN 201910349512 A CN201910349512 A CN 201910349512A CN 110238513 B CN110238513 B CN 110238513B
- Authority
- CN
- China
- Prior art keywords
- light
- optical
- laser beam
- miniled
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention mainly discloses a MiniLED cutting method and a MiniLED cutting device. The method comprises the following steps: emitting a laser beam and carrying out adjustment processing on the laser beam; carrying out first light transmission characteristic changing treatment on the laser beam after the adjustment treatment, and generating N focuses in the optical axis transmission direction of the laser beam; wherein N is more than or equal to 2; performing a second light transmission characteristic changing process on the laser beam subjected to the first light transmission characteristic changing process to generate M groups of light beams in a direction perpendicular to the optical axis transmission direction of the laser beam, wherein each group of the light beams has the N focal points in the optical axis transmission direction; wherein M is more than or equal to 2; and transmitting the M groups of light beams through a light path to realize cutting treatment on the substrate material. And a matched device is designed. According to the MiniLED wafer cutting method, on one hand, the distance of the design focus is adapted to the thickness of the reformed layer, and the oblique fracture angle is well controlled; on the other hand, a multi-focus three-dimensional cutting mode is adopted, a plurality of wafers can be cut at one time, and the efficiency is greatly improved.
Description
Technical Field
The invention belongs to the field of material processing, and particularly relates to a MiniLED wafer cutting method and a MiniLED wafer cutting device.
Background
With the development of the LED industry, the processing technology of each section is more and more mature, the competition is more and more intense, and the application occasions are more and more extensive. Particularly in the display industry, the requirement on the display effect is higher and higher, so that a new requirement is required to be provided for the light-emitting angle of a single LED wafer; and the requirement for resolution is higher and higher, the size of a single LED light emitting chip needs to be reduced.
Compared with OLED, the MiniLED display has the advantages of lower cost, saturated display effect, 3-5 times higher brightness, 3-5 times longer service life, lower power consumption and the like compared with OLED, can be properly modified on the production line of the traditional LED, greatly reduces the manufacturing cost of equipment, can be quickly put on the market, has very wide market prospect and very great advantages, and is expected to show an explosive growth trend in the next 5-10 years.
Due to the particularity and high requirements of the MiniLED industry, a new cutting method needs to be further researched on the laser cutting process, so that the new performance requirements can be met. Firstly, the light-emitting angle of an LED wafer needs to be controlled, so that the oblique crack angle of CH2 in the LED cutting process needs to be controlled, the oblique crack angle is less than 2 degrees, the oblique crack angle (5-12 degrees are different) cannot be well controlled by the traditional invisible cutting method, and the processing requirement cannot be met; bessel is adopted for sapphire + to ensure the IR yield problem, so that the overall processing yield is not high; secondly, the MiniLED die size is smaller and thinner than the conventional LED die size, which requires increased dicing efficiency to meet the throughput requirement. The traditional cutting method only cuts one cutting channel at a time, the efficiency is too low, the long processing time can lead to the fact that the processed part is extruded and deformed greatly due to pre-splitting, poor processing or a processing state can be caused in the later process in serious cases, the cutting efficiency needs to be improved, the processing time is shortened, the productivity is greatly improved on the one hand, the deformation risk caused by the pre-splitting can be reduced on the other hand, and the new cutting process requirement of the MiniLED is finally met.
Therefore, it is necessary to find a new method for cutting the MiniLED die to meet the production requirements of the MiniLED.
Meanwhile, in order to realize the MiniLED cutting method, it is also necessary to design a set of MiniLED wafer cutting device.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a MiniLED wafer cutting method to solve the technical problems that the existing cutting method cannot well control the angle of the inclined crack, has low processing efficiency and cannot meet the processing requirements.
The invention aims to provide a MiniLED wafer cutting method, which comprises the following steps:
emitting a laser beam and carrying out adjustment processing on the laser beam;
carrying out first light transmission characteristic changing treatment on the laser beam after the adjustment treatment, and generating N focuses in the optical axis transmission direction of the laser beam; wherein N is more than or equal to 2;
performing a second light transmission characteristic changing process on the laser beam subjected to the first light transmission characteristic changing process to generate M groups of light beams in a direction perpendicular to the optical axis transmission direction of the laser beam, wherein each group of the light beams has the N focal points in the optical axis transmission direction; wherein M is more than or equal to 2;
and transmitting the M groups of light beams through a light path to realize cutting treatment on the substrate material.
Preferably, the distance between two adjacent focuses in the N focuses in the air is 6-9 μm; the distance between two adjacent focuses in the N focuses on the same optical path in the modified layer inside the substrate material is 10.5-18 μm.
Preferably, the width of the modified layer within the substrate material of a single focus is 10-16 μm.
Preferably, the substrate material comprises any one of sapphire, glass, transparent or translucent materials.
Another object of the present invention is to provide a MiniLED wafer cutting apparatus, comprising:
an optical function unit including a first optical function device for subjecting an input laser beam to a process of changing an optical transmission characteristic, and generating N focal points in an optical axis transmission direction of the laser beam; the second optical function device is used for carrying out processing of changing optical transmission characteristics on the laser beams processed by the first optical function device, M groups of light beams are generated in the direction perpendicular to the optical axis transmission direction of the laser beams, and each group of the light beams has the N focuses in the optical axis transmission direction; wherein N is more than or equal to 2, and M is more than or equal to 2;
and the optical path transmission device is used for transmitting the laser beam processed by the second optical function device to the position of the substrate to be cut.
Preferably, the cutting device of the MiniLED wafer further comprises a laser generating device;
the laser generating device comprises a laser transmitter, a light path conversion device and a light beam control device;
the laser emitter emits light and then converts the light source into light beams according with the parameter property through the light beam control device, and a plurality of light path conversion devices can be arranged among any components in the midway.
Preferably, the beam control means comprises either or both of a shutter and a laser beam expansion means.
Preferably, the optical path transmission device comprises a plurality of lenses and an optical path conversion device,
further preferably, the lenses include a pair of convex lenses and an objective lens.
Further preferably, the two convex lenses are separated by two focal lengths, and the two convex lenses are separated by one focal length from the optical function device and the objective lens respectively.
Compared with the prior art, the MiniLED wafer cutting method disclosed by the invention has the advantages that on one hand, the distance of the design focus is adapted to the thickness of the modified layer, and the oblique fracture angle is well controlled; on the other hand, a multi-focus three-dimensional cutting mode is adopted, so that a plurality of rows of wafers can be cut at one time, and the efficiency is greatly improved.
The MiniLED wafer cutting device is developed for realizing the cutting method, can well control the angle of the inclined crack within the parameter requirement range, and greatly enhances the processing efficiency of equipment due to a multi-point cutting mode.
Drawings
FIG. 1 is a schematic diagram of an optical path of a cutting device according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a cutting device according to an embodiment of the present invention for a distance requirement of a convex lens.
FIG. 3 is a schematic diagram illustrating the distribution of the focus of the cutting method in the substrate material according to the embodiment of the present invention;
fig. 4 is a schematic cross-sectional view of a cutting process performed when the substrate material is sapphire according to the embodiment of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The embodiment of the invention provides a MiniLED wafer cutting method, which achieves the purpose of controlling the oblique fracture angle by skillfully designing an optical path and matching a precise instrument, and then manufactures a focus dot matrix by multiple means of multi-point light sources, light splitting, symmetrical optical paths and the like to realize the purpose of high-efficiency processing; the MiniLED wafer cutting method comprises the following steps:
s01: emitting a laser beam and carrying out adjustment processing on the laser beam;
s02: carrying out first light transmission characteristic changing treatment on the laser beam after the adjustment treatment, and generating N focuses in the optical axis transmission direction of the laser beam; wherein N is more than or equal to 2;
s03: performing a second light transmission characteristic changing process on the laser beam subjected to the first light transmission characteristic changing process to generate M groups of light beams in a direction perpendicular to the optical axis transmission direction of the laser beam, wherein each group of the light beams has the N focal points in the optical axis transmission direction; wherein M is more than or equal to 2;
s04: and transmitting the M groups of light beams through a light path to realize cutting treatment on the substrate material.
In the above step S02, the distance between two adjacent focuses of the N focuses in the air is 6-9 μm; the distance between two adjacent focuses in the N focuses on the same optical path in the modified layer inside the substrate material is 10.5-18 μm. The distance between the two adjacent focuses in the air is 6-9 μm, and the refractive index of the substrate material is 1.75-2, so the distance between the two adjacent focuses in the air is 10.5-18 μm. The design ensures that the spacing between air layers between focuses is 6-9um, the number of the focuses is N (N is more than or equal to 2), the length of the interlamellar spacing of each focus on the modified layer in the material is calculated to be (6-9) × (1.75-2.0) ═ 10.5-18 um according to the refractive index (1.75-2.0) of laser in the sapphire, and the width of the modified layer of a single focus in the material is about 10-16um, so that each modified layer can be well connected by using the processing method of the embodiment of the invention, and a larger modified layer width is finally formed, thereby well controlling the oblique fracture angle.
In the above step S02, the width of the modified layer within the substrate material is 10-16 μm for a single focus. The focal length is adjusted and controlled to select the size range so as to adapt to the width of the modified layer.
In the above step S04, the substrate material includes any one of sapphire, glass, and transparent or translucent material. These materials are common substrate materials and can be laser machined in their properties.
Another object of the present invention is to provide a MiniLED wafer cutting apparatus, comprising:
an optical function unit including a first optical function device 2a1 and a second optical function device 2a2, the first optical function device 2a1 being configured to subject an input laser beam to a process of changing light transmission characteristics, producing N focal points in an optical axis transmission direction of the laser beam; the second optical function device 2a2 is used for subjecting the laser beam processed by the first optical function device 2a1 to a light transmission characteristic changing process, and M groups of light beams are generated in a direction perpendicular to the optical axis transmission direction of the laser beam, and each group of the light beams has the N focal points in the optical axis transmission direction; wherein N is more than or equal to 2, and M is more than or equal to 2; the optical function device may also incorporate the optical function device 2a1 and the second optical function device 2a2 as the optical function device 2 b.
And the optical path transmission device 3 is used for carrying out laser transmission on the laser beam processed by the second optical functional device 2a2 to a substrate to be cut.
Specifically, in an embodiment, the cutting device for a MiniLED wafer further includes a laser generator 1; more specifically, the laser generating device comprises a laser emitter 11, a light path reflecting device 13 and a light beam control device; after emitting light, the laser emitter 11 converts the light source into a light beam conforming to the property of the parameter through a light beam control device, and a plurality of light path reflection devices 13 can be arranged among any components in the midway.
In one embodiment, the beam control means comprises either or both of a shutter 12 and a laser beam expanding means and a half-wave plate 14 thereof. The optical gate is mainly used for controlling whether the laser passes through the optical path. And the light beam expanding device further accurately controls the laser intensity, collimation, polarization direction, spot size and the like.
In one embodiment, the optical path transmission device 3 includes several lenses 34 and an optical path conversion device 33. These are common optical path control devices, and the optical path conversion device is mainly a mirror of the corresponding wavelength band.
More specifically, in one embodiment, the lenses include a pair of convex lenses 32 and an objective lens 34.
In one embodiment, as shown in fig. 2, the two convex lenses 32 are separated by two focal lengths, and the two convex lenses are separated by one focal length from the optical functional device 2a or 2b and the objective lens 34, respectively. Specifically, as shown, the left lens is one focal length away from the objective lens and the right lens is one focal length away from the optical function device. By adopting the design scheme, a symmetrical light path can be formed, and the focus point lattice converted by the functional device penetrates through the objective lens to be symmetrical to the substrate material.
Example 1
When laser light passes through the optical function device 1 (as shown in figure 1), N focuses (N is more than or equal to 2) are generated in the optical axis transmission direction after the laser light is transmitted into the objective lens by changing the optical transmission characteristic.
When laser light passes through the optical function device 2 (as shown in figure 1), M N focuses (M is larger than or equal to 2, N is larger than or equal to 2) are generated in the direction perpendicular to the optical axis transmission direction after the laser light is transmitted into the objective lens by changing the optical transmission characteristic.
Therefore, when the laser light is transmitted through the optical functional devices 1 and 2, the necessary condition for the MDC cutting method is generated.
In particular, the optical functional devices 1 and 2 may be functionally divided, or the functions of two optical functional devices may be combined as shown in fig. 1, such as the optical functional device 3 in the figure, to simultaneously realize the functions of the optical functional devices 1 and 2, and realize replacement.
Example 2
When light passes through the optical functional devices 1 and 2 (or the optical functional device 3), the transmission of the light beam is M-beam transmission, and the angle is divergent, depending on the parameter characteristics of the optical functional device 2 or the optical functional device 3, such as the state transmission of fig. 1.
Lens1 and Lens2 are used in the drawings as two identical biconvex or plano-convex mirrors forming a 4f optical system. The distance of the convex mirror is strictly limited, and the distance is the focal length f of the convex mirror, as shown in figure 2.
When light with a certain divergence angle passes through Lens2, the light becomes parallel transmission state; the light travels through Lens1 at a convergent angle, and accordingly, the divergent angle and the convergent angle of the light are equal.
The distance requirement of the optical path transmission is strictly controlled within an error range of 5mm, and the aberration of the optical path mirror image is reduced. The function of the device is to ensure that the laser can normally enter the entrance pupil of the objective lens after passing through the optical function device, otherwise the laser with a divergent angle can not enter the entrance pupil of the objective lens.
Example 3
In order to make the MDC meet the normal processing requirement, the line spacing of M beams of light needs to be adjusted, the adjustment method is to adjust the width of the line spacing by rotating the angle of the optical functional device 2 (or the optical functional device 3), and finally, when the MiniLED is processed, M (horizontal and parallel to the cutting direction) × N (vertical and perpendicular to the cutting direction) focuses can be generated in the three-dimensional space to process the MiniLED, as shown in fig. 3.
Fig. 4 is a schematic view of a cut section of a cut sapphire substrate, a1 being a monolithic sapphire substrate, a11 being the cut section therein.
Claims (3)
1. A cutting device of MiniLED wafer, characterized by includes:
an optical function unit including a first optical function device for subjecting an input laser beam to a process of changing an optical transmission characteristic, and generating N focal points in an optical axis transmission direction of the laser beam; the second optical function device is used for carrying out processing of changing optical transmission characteristics on the laser beams processed by the first optical function device, M groups of light beams are generated in the direction perpendicular to the optical axis transmission direction of the laser beams, and each group of the light beams has the N focuses in the optical axis transmission direction; wherein N is more than or equal to 2, and M is more than or equal to 2;
the optical path transmission device is used for transmitting the laser beam processed by the second optical function device to a substrate to be cut; the optical path transmission device comprises a plurality of lenses and an optical path conversion device, the lenses comprise a pair of convex lenses and an objective lens, two focal lengths are arranged between the two convex lenses, and one focal length is arranged between the two convex lenses and the second optical function device and between the two convex lenses and the objective lens respectively; when light with a certain divergence angle passes through the convex lens, the light becomes a parallel transmission state; the light is transmitted in a contracted angle after passing through the second convex lens.
2. The apparatus for cutting MiniLED dies as set forth in claim 1, wherein: the MiniLED wafer cutting device further comprises a laser generating device;
the laser generating device comprises a laser transmitter, a light path conversion device and a light beam control device;
the laser emitter emits light and then the light source is converted into light beams according with the parameter property through the light beam control device.
3. The apparatus for cutting MiniLED dies as set forth in claim 2, wherein: the beam control device comprises either one or both of a shutter and a laser beam expanding device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910349512.1A CN110238513B (en) | 2019-04-28 | 2019-04-28 | MiniLED wafer cutting method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910349512.1A CN110238513B (en) | 2019-04-28 | 2019-04-28 | MiniLED wafer cutting method and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110238513A CN110238513A (en) | 2019-09-17 |
| CN110238513B true CN110238513B (en) | 2022-03-15 |
Family
ID=67883430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910349512.1A Active CN110238513B (en) | 2019-04-28 | 2019-04-28 | MiniLED wafer cutting method and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110238513B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08327942A (en) * | 1995-06-01 | 1996-12-13 | Microlas Lasersyst Gmbh | Optical apparatus for generation of sharp irradiated radiation from laser beam |
| JP2003251475A (en) * | 2002-03-01 | 2003-09-09 | Sumitomo Heavy Ind Ltd | Laser beam machining method |
| CN103551732A (en) * | 2013-11-13 | 2014-02-05 | 苏州德龙激光股份有限公司 | Laser cutting device and cutting method |
| CN203765174U (en) * | 2014-01-27 | 2014-08-13 | 深圳英诺激光科技有限公司 | Laser cutting machine enabling LED chip to crack easily |
| CN104175003A (en) * | 2014-09-09 | 2014-12-03 | 深圳市大族激光科技股份有限公司 | Laser machining system and multi-path laser machining device |
| CN104625420A (en) * | 2014-12-29 | 2015-05-20 | 中自高科（苏州）光电有限公司 | Machining method for non-vacuum maskless high-conductivity metal nanowire |
| CN107529467A (en) * | 2017-08-21 | 2018-01-02 | 成都莱普科技有限公司 | Silicon-based MEMS wafer multi-focus laser cutting system and cutting method |
| CN108161250A (en) * | 2018-01-30 | 2018-06-15 | 苏州德龙激光股份有限公司 | Multifocal DYNAMIC DISTRIBUTION laser machines the method and device of brittle transparent material |
-
2019
- 2019-04-28 CN CN201910349512.1A patent/CN110238513B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08327942A (en) * | 1995-06-01 | 1996-12-13 | Microlas Lasersyst Gmbh | Optical apparatus for generation of sharp irradiated radiation from laser beam |
| JP2003251475A (en) * | 2002-03-01 | 2003-09-09 | Sumitomo Heavy Ind Ltd | Laser beam machining method |
| CN103551732A (en) * | 2013-11-13 | 2014-02-05 | 苏州德龙激光股份有限公司 | Laser cutting device and cutting method |
| CN203765174U (en) * | 2014-01-27 | 2014-08-13 | 深圳英诺激光科技有限公司 | Laser cutting machine enabling LED chip to crack easily |
| CN104175003A (en) * | 2014-09-09 | 2014-12-03 | 深圳市大族激光科技股份有限公司 | Laser machining system and multi-path laser machining device |
| CN104625420A (en) * | 2014-12-29 | 2015-05-20 | 中自高科（苏州）光电有限公司 | Machining method for non-vacuum maskless high-conductivity metal nanowire |
| CN107529467A (en) * | 2017-08-21 | 2018-01-02 | 成都莱普科技有限公司 | Silicon-based MEMS wafer multi-focus laser cutting system and cutting method |
| CN108161250A (en) * | 2018-01-30 | 2018-06-15 | 苏州德龙激光股份有限公司 | Multifocal DYNAMIC DISTRIBUTION laser machines the method and device of brittle transparent material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110238513A (en) | 2019-09-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11931827B2 (en) | Laser cutting device and laser cutting method | |
| KR101547806B1 (en) | Device for processing brittle substrate using aspherical lens having multi focus | |
| KR20170028426A (en) | Method and device for the laser-based working of two-dimensional, crystalline substrates, in particular semiconductor substrates | |
| EP2951625A1 (en) | Fibre optical laser combiner | |
| CN103551732A (en) | Laser cutting device and cutting method | |
| JP6467353B2 (en) | Apparatus for homogenizing a laser beam | |
| JP6649402B2 (en) | Line beam forming equipment | |
| CN106842587B (en) | The diffraction optical method realizes the shaping of Gaussian light into ultra-fine linear uniform light spots with ultra-high length-width ratio | |
| KR20070118023A (en) | Device for generating a homogeneous angular distribution of a laser radiation | |
| KR20160073376A (en) | Modular laser apparatus | |
| KR20210066853A (en) | laser machining system | |
| CN110238513B (en) | MiniLED wafer cutting method and device | |
| CN210281096U (en) | Double-light-path laser processing device for wafer scribing | |
| US11835731B2 (en) | Optical collimator | |
| CN111562710A (en) | Red exposure eliminating method and infrared light supplementing lamp using same | |
| CN114077066B (en) | Beam-expanding collimator | |
| CN109683235A (en) | A kind of multilayer fibers and the Optical Maser System for realizing bidifly light output | |
| WO2021208996A1 (en) | Laser light source | |
| KR101733434B1 (en) | Method for cutting substrate using spherical aberration | |
| TWI715548B (en) | Laser cutting method for hard and brittle materials and laser cutting machine and optical system of laser cutting machine | |
| CN105676598A (en) | Light collection lens, exposure optical system, exposure head and exposure device | |
| CN205563074U (en) | Light collection device lens, exposure optical system , photohead and exposure device | |
| CN116197558A (en) | Optical system for laser cutting, laser processing device and method | |
| CN110658630A (en) | Optical device with microstructure capable of forming columnar light beam | |
| US20240109152A1 (en) | Combined dual-wavelength laser light processing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220721 Address after: 518000 101, building 6, Wanyan Industrial Zone, Qiaotou community, Fuhai street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Han's Semiconductor Equipment Technology Co.,Ltd. Address before: 518000 No. 9988 Shennan Road, Nanshan District, Shenzhen, Guangdong Patentee before: HAN'S LASER TECHNOLOGY INDUSTRY GROUP Co.,Ltd. |
|
| TR01 | Transfer of patent right |