CN110233105A - A kind of preparation method and structure of the adjustable SiC based hemts structure of warpage - Google Patents
A kind of preparation method and structure of the adjustable SiC based hemts structure of warpage Download PDFInfo
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- CN110233105A CN110233105A CN201910534581.XA CN201910534581A CN110233105A CN 110233105 A CN110233105 A CN 110233105A CN 201910534581 A CN201910534581 A CN 201910534581A CN 110233105 A CN110233105 A CN 110233105A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims abstract description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 24
- 229910021529 ammonia Inorganic materials 0.000 claims description 12
- 238000003780 insertion Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- 230000002708 enhancing effect Effects 0.000 abstract description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 23
- 229910010271 silicon carbide Inorganic materials 0.000 description 23
- 238000000034 method Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The present invention relates to a kind of preparation methods of the adjustable SiC based hemts structure of warpage, including growing first buffer layer on SiC base substrate, second buffer layer is grown in the first buffer layer, barrier layer is grown in the second buffer layer, it is characterized by: before the first buffer layer growth second buffer layer, AlGaN insert layer is grown in the first buffer layer, the second buffer layer is grown in the AlGaN insert layer, the growth thickness of the AlGaN insert layer is 5 ~ 100nm, the component of Al is 5% ~ 50% in the AlGaN insert layer.The flexible control that the present invention is successfully realized SiC based hemts epitaxial warping by introducing AlGaN insert layer can flexibly realize a wide range of enhancing by controlling thickness or the Al component of AlGaN or weaken the stress of SiC based hemts extension.
Description
Technical field
The present invention relates to semiconductor fields, more particularly to a kind of preparation method of the adjustable SiC based hemts structure of warpage
And structure.
Background technique
HEMT (High Electron Mobility Transistor, high electron mobility transistor) is a kind of heterogeneous
Junction field effect transistor is widely used in various electric appliances.HEMT epitaxial structure is the basis for preparing HEMT device, when previous
Kind of HEMT epitaxial structure includes substrate and successively grow such as nucleating layer, buffer layer, barrier layer, cap rock on substrate, wherein
Substrate can be silicon carbide substrates, Sapphire Substrate or monocrystalline substrate etc..
There are many methods, such as debugging bottom buffer etc. for the warpage control of SiC base hetero-epitaxy in the industry at present, still
These method control ranges are limited, inflexible.
Summary of the invention
It is an object of the present invention to provide a kind of preparation methods of the adjustable SiC based hemts structure of warpage.
In order to achieve the above objectives, the technical solution adopted by the present invention is that:
A kind of preparation method of the adjustable SiC based hemts structure of warpage, including on SiC base substrate grow first buffer layer,
Second buffer layer is grown in the first buffer layer, grows barrier layer in the second buffer layer, it is characterised in that:
Before the first buffer layer growth second buffer layer, AlGaN insert layer is grown in the first buffer layer,
The second buffer layer is grown in the AlGaN insert layer, and the growth thickness of the AlGaN insert layer is 5 ~
100nm, the component of Al is 5% ~ 50% in the AlGaN insert layer.
Preferably, the warpage is>-10um and when<10um, the growth thickness of the AlGaN insert layer is 5 ~
100nm, the component of Al is 5% ~ 50% in the AlGaN insert layer.
Preferably, which includes:
The SiC base substrate is toasted 5-10 minutes under 1000 DEG C -1200 DEG C of H2 atmosphere,
1000 DEG C ~ 1100 DEG C at a temperature of be passed through ammonia, TMAl: it is slow that described first is grown on the SiC base substrate
Layer is rushed,
1000 DEG C ~ 1100 DEG C at a temperature of simultaneously be passed through ammonia, TMGa and TMAl: grown in the first buffer layer
The AlGaN insert layer,
1000 DEG C ~ 1100 DEG C at a temperature of be passed through ammonia, TMGa: described second is grown in the AlGaN insert layer
Buffer layer,
1000 DEG C ~ 1100 DEG C at a temperature of simultaneously be passed through ammonia, TMGa and TMAl: grown in the second buffer layer
The barrier layer.
It is further preferred that the first buffer layer uses AlN buffer layer, the second buffer layer is slow using GaN
Rush layer.
It is further preferred that the thickness of the first buffer layer is in 20-200nm；The thickness of the second buffer layer
In 1-2um.
It is further preferred that the barrier layer is HEMT barrier layer.
It is further preferred that the thickness of the barrier layer is in 20-30nm.
Preferably, the SiC base substrate is the face Si SiC substrate.
Preferably, the SiC base substrate is semi-insulating or N-shaped SiC substrate.
Preferably, the size of the SiC base substrate is 2-6 cuns.
It is a further object to provide a kind of adjustable SiC based hemts structures of warpage.
In order to achieve the above objectives, the technical solution adopted by the present invention is that:
A kind of adjustable SiC based hemts structure of warpage, is made by the preparation method.
Since above-mentioned technical proposal is used, the present invention has following advantages and effect compared with prior art:
The flexible control that the present invention is successfully realized SiC based hemts epitaxial warping by introducing AlGaN insert layer, can pass through control
The thickness or Al component of AlGaN processed flexibly realizes a wide range of enhancing or weaken the stress of SiC based hemts extension.
Specific embodiment
Technical solution of the present invention will be clearly and completely described below, it is clear that described embodiment is this hair
Bright a part of the embodiment, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not having
Every other embodiment obtained under the premise of creative work is made, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside", is merely for convenience of description of the present invention and simplification of the description, without
It is that the device of indication or suggestion meaning or element must have a particular orientation, be constructed and operated in a specific orientation, therefore not
It can be interpreted as limitation of the present invention.In addition, term " first ", " second ", " third " are used for description purposes only, and cannot understand
For indication or suggestion relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
A kind of preparation method of the adjustable SiC based hemts structure of warpage, comprising the following steps:
S1: the selection face Si SiC substrate is semi-insulating or N-shaped SiC substrate, and SiC substrate is 2 cun, 3 cun, 4 cun, 6 cun, and SiC is served as a contrast
H of the bottom at 1000 DEG C -1200 DEG C2It is toasted 5-10 minutes under atmosphere,
S2: 1000 DEG C ~ 1100 DEG C at a temperature of be passed through ammonia, TMAl: growing AIN buffer layer on sic substrates, AlN buffering
The thickness of layer in 20-200nm, such as 60nm, 120nm, 180nm,
S3: 1000 DEG C ~ 1100 DEG C at a temperature of simultaneously be passed through ammonia, TMGa and TMAl: grown on AlN buffer layer
AlGaN insert layer,
S4: 1000 DEG C ~ 1100 DEG C at a temperature of be passed through ammonia, TMGa: grow GaN buffer layer in AlGaN insert layer, GaN is slow
The thickness of layer is rushed in 1-2um, such as 1 um, 1.5 um, 2 um,
S5: 1000 DEG C ~ 1100 DEG C at a temperature of simultaneously be passed through ammonia, TMGa and TMAl: grow potential barrier on GaN buffer layer
Layer, barrier layer is AlGaN layer of the thickness in 20-30nm, such as 20nm, 25nm, 30nm, and obtains required HEMT structure.
Wherein: in S3, the thickness of AlGaN insert layer, the component of Al require to be adjusted according to different warpages,
Shown in table specific as follows:
| Embodiment | One | Two | Three | Four | Five |
| Warpage needed for structure | 5um | >±5um | >±5um | <±5um | <±5um |
| AlGaN insert layer thickness | 10nm | 10nm | 5nm-10nm | 10nm | 10nm-50nm |
| Al component | 20% | 5%-20% | 20% | 20%-30% | 20% |
In addition, being easy to crack when the thickness of AlGaN insert layer is greater than 500nm-1000nm first, this be may result in
The unstable quality of extension product；Secondly the growth of AlGaN insert layer is thicker, and cost is naturally higher, this is for later volume production
And need to optimize；Last AlGaN insert layer is so easy cleaning there is no GaN layer, thus AlGaN insert layer it is too thick for
How much the cleaning of subsequent graphite plate can bring some troubles.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of preparation method of the adjustable SiC based hemts structure of warpage, including grow on SiC base substrate first buffer layer,
Second buffer layer is grown in the first buffer layer, grows barrier layer in the second buffer layer, it is characterised in that:
Before the first buffer layer growth second buffer layer, AlGaN insertion is grown in the first buffer layer
Layer, the second buffer layer are grown in the AlGaN insert layer, and the growth thickness of the AlGaN insert layer is 5 ~
100nm, the component of Al is 5% ~ 50% in the AlGaN insert layer.
2. a kind of preparation method of the adjustable SiC based hemts structure of warpage according to claim 1, it is characterised in that: when
The warpage is>-10um and when<10um, the growth thickness of the AlGaN insert layer is 5 ~ 100nm, described
The component of Al is 5% ~ 50% in AlGaN insert layer.
3. a kind of preparation method of the adjustable SiC based hemts structure of warpage according to claim 1, it is characterised in that: should
Preparation method includes:
H by the SiC base substrate at 1000 DEG C -1200 DEG C2It is toasted 5-10 minutes under atmosphere,
1000 DEG C ~ 1100 DEG C at a temperature of be passed through ammonia, TMAl: it is slow that described first is grown on the SiC base substrate
Layer is rushed,
1000 DEG C ~ 1100 DEG C at a temperature of simultaneously be passed through ammonia, TMGa and TMAl: grown in the first buffer layer
The AlGaN insert layer,
1000 DEG C ~ 1100 DEG C at a temperature of be passed through ammonia, TMGa: described second is grown in the AlGaN insert layer
Buffer layer,
1000 DEG C ~ 1100 DEG C at a temperature of simultaneously be passed through ammonia, TMGa and TMAl: grown in the second buffer layer
The barrier layer.
4. a kind of preparation method of the adjustable SiC based hemts structure of warpage according to claim 3, it is characterised in that: institute
The first buffer layer stated uses AlN buffer layer, and the second buffer layer uses GaN buffer layer.
5. a kind of preparation method of the adjustable SiC based hemts structure of warpage according to claim 3, it is characterised in that: institute
The thickness for the first buffer layer stated is in 20-200nm；The thickness of the second buffer layer is in 1-2um.
6. a kind of preparation method of the adjustable SiC based hemts structure of warpage according to claim 3, it is characterised in that: institute
The barrier layer stated is HEMT barrier layer.
7. a kind of preparation method of the adjustable SiC based hemts structure of warpage according to claim 3, it is characterised in that: institute
The thickness for the barrier layer stated is in 20-30nm.
8. a kind of preparation method of the adjustable SiC based hemts structure of warpage according to claim 1, it is characterised in that: institute
The SiC base substrate stated is the face Si SiC substrate.
9. a kind of preparation method of the adjustable SiC based hemts structure of warpage according to claim 1, it is characterised in that: institute
The SiC base substrate stated is semi-insulating or N-shaped SiC substrate.
10. a kind of adjustable SiC based hemts structure of warpage, it is characterised in that: it is as described in any one of claim 1 to 9
Preparation method be made.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113725330A (en) * | 2021-08-10 | 2021-11-30 | 广州市众拓光电科技有限公司 | Silicon-based LED epitaxial structure and preparation method and application thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002261024A (en) * | 2001-02-28 | 2002-09-13 | Hitachi Cable Ltd | Nitride semiconductor epitaxial wafer and its manufacturing method, and semiconductor device |
| JP2005005723A (en) * | 2004-06-25 | 2005-01-06 | Hitachi Cable Ltd | Method for manufacturing nitride semiconductor epitaxial wafer and nitride semiconductor epitaxial wafer |
| CN1825539A (en) * | 2005-02-22 | 2006-08-30 | 中国科学院半导体研究所 | Method for growing non-crack III family nitride on silicon substrate |
| JP2009231561A (en) * | 2008-03-24 | 2009-10-08 | Nippon Telegr & Teleph Corp <Ntt> | Nitride semiconductor crystal thin film and its manufacturing method, and semiconductor device and method of manufacturing the same |
| WO2016039178A1 (en) * | 2014-09-10 | 2016-03-17 | シャープ株式会社 | Nitride semiconductor multilayer structure, and electronic device including same |
| CN107004579A (en) * | 2014-11-25 | 2017-08-01 | 三垦电气株式会社 | Epitaxial wafer, semiconductor element, the manufacture method of the manufacture method of epitaxial wafer and semiconductor element |
| CN107845565A (en) * | 2017-09-22 | 2018-03-27 | 叶顺闵 | One kind improves gallium nitride device electron mobility and epitaxial layer quality method |
| CN109103099A (en) * | 2017-06-21 | 2018-12-28 | 英飞凌科技奥地利有限公司 | Method for controlling wafer bow in III-V type semiconductor device |
-
2019
- 2019-06-20 CN CN201910534581.XA patent/CN110233105B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002261024A (en) * | 2001-02-28 | 2002-09-13 | Hitachi Cable Ltd | Nitride semiconductor epitaxial wafer and its manufacturing method, and semiconductor device |
| JP2005005723A (en) * | 2004-06-25 | 2005-01-06 | Hitachi Cable Ltd | Method for manufacturing nitride semiconductor epitaxial wafer and nitride semiconductor epitaxial wafer |
| CN1825539A (en) * | 2005-02-22 | 2006-08-30 | 中国科学院半导体研究所 | Method for growing non-crack III family nitride on silicon substrate |
| JP2009231561A (en) * | 2008-03-24 | 2009-10-08 | Nippon Telegr & Teleph Corp <Ntt> | Nitride semiconductor crystal thin film and its manufacturing method, and semiconductor device and method of manufacturing the same |
| WO2016039178A1 (en) * | 2014-09-10 | 2016-03-17 | シャープ株式会社 | Nitride semiconductor multilayer structure, and electronic device including same |
| CN107004579A (en) * | 2014-11-25 | 2017-08-01 | 三垦电气株式会社 | Epitaxial wafer, semiconductor element, the manufacture method of the manufacture method of epitaxial wafer and semiconductor element |
| CN109103099A (en) * | 2017-06-21 | 2018-12-28 | 英飞凌科技奥地利有限公司 | Method for controlling wafer bow in III-V type semiconductor device |
| CN107845565A (en) * | 2017-09-22 | 2018-03-27 | 叶顺闵 | One kind improves gallium nitride device electron mobility and epitaxial layer quality method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113725330A (en) * | 2021-08-10 | 2021-11-30 | 广州市众拓光电科技有限公司 | Silicon-based LED epitaxial structure and preparation method and application thereof |
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