CN110231557A - A kind of start-up circuit reliability verification method of band-gap reference circuit - Google Patents
A kind of start-up circuit reliability verification method of band-gap reference circuit Download PDFInfo
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
The invention discloses a kind of start-up circuit reliability verification methods of band-gap reference circuit, comprising steps of ideal voltage source is added in the key node in start-up circuit, carries out direct current simulating, verifying and obtain simulation result；Determine whether start-up circuit works normally according to simulation result.Ideal voltage source is added in the key node of the start-up circuit of band-gap reference circuit in the present invention, direct current simulating, verifying is carried out using the DC voltage value of the ideal voltage source as scanning variable, more fully to verify whether start-up circuit works normally；Direct current simulating, verifying can more fully verify circuit all stable states that may be present；More targeted carry out circuit design improves production yield rate, reduces product risks.
Description
Technical field
The present invention relates to band-gap reference circuit technical field more particularly to a kind of start-up circuit of band-gap reference circuit are reliable
Property verification method.
Background technique
In Analogous Integrated Electronic Circuits and composite signal integrated circuits, band-gap reference (Band-Gap Reference, BGR) electricity
Road is one of them critically important comprising modules, basic function be to provide a high stability, almost with temperature and power supply electricity
Unrelated reference voltage is pressed, for the use of other functional modules.
There are the major issues of " degeneracy " bias point in band-gap reference circuit, i.e., exist at least in band-gap reference circuit
Two matching points, one of them is zero point, i.e. each branch current of nucleus module is zero, and circuit turns off and can be unlimited
Phase is held off；One is normal working point.Since circuit can stablize any one in two kinds of working conditions,
So needing to increase a kind of circuit, circuit after power supply electrifying is allowed to get rid of undesirable degeneracy working condition and normal work
Make, this circuit is exactly start-up circuit.After band-gap reference circuit works normally, start-up circuit is closed.It can be seen that start-up circuit
Performance quality can directly affect the performance of band-gap reference circuit.
The performance of start-up circuit includes power consumption, powers on overshoot current and reliability etc., and most important one performance is exactly
Its reliability.Influence many because being known as of start-up circuit reliability: technique angular displacement, supply voltage size, temperature change are all
Common several influence factors, there are also the mismatches (mismatch) of device in addition to this, even if identical in physical layout
Device cell by technique production after can also generate device parameters (such as breadth length ratio, threshold voltage of metal-oxide-semiconductor) deviation or
Difference, referred to as mismatch, this mismatch and its bring influence seem more serious after device size enters sub-micrometer range.
How the reliability of start-up circuit sufficiently to be verified as far as possible before chip production, to guarantee various conditions
Lower start-up circuit can work normally, to will not influence production yield rate, become technical problem urgently to be solved.Currently, testing
The common method for demonstrate,proving the start-up circuit reliability of band-gap reference circuit, generally there is following two: (1) transient state corner emulation is tested
Card: it verifies process as shown in Figure 1, building circuit first, and setting verifying excitation, simulation excitation includes but is not limited to device mould
Type, simulation type, data save type, supply voltage, temperature and/or variable element assignment etc., and PVT is then arranged
(Process Voltage Temperature) corner carries out transient state corner emulation.After emulation, emulation knot is checked
Fruit determines whether start-up circuit works normally according to simulation result.(2) transient state Monte Carlo (Monte Carlo) simulating, verifying:
It verifies process as shown in Fig. 2, the step of front two is identical with Transient verification step, builds circuit, and setting motivates, then
Carry out transient state Monte Carlo emulation (sampled point at least 1000 times).After emulation, simulation result is checked, tied according to emulation
Fruit determines whether start-up circuit works normally.
Verification method (1) is the simulating, verifying carried out at PVT corner, and method (2) is the allusion quotation when considering device mismatch
Simulating, verifying in the case of type.Both verification modes all refer to Transient, only one is transient state corner emulation,
One is transient state Monte Carlo emulation.Transient judges that the standard whether start-up circuit works normally is that confirmation transient state is defeated
Final stable state out is the stable state that circuit works normally, for example band-gap reference output DC voltage should be in typical case
1.2V, if that also start-up circuit has completely turned off the final stationary value of Transient near 1.2V, while when stable state,
It can be determined that start-up circuit works normally, if the final stationary value not instead of 1.2V of Transient, deviation is bigger, such as
Not within the scope of 1.2V ± 100mV, although deviation very little, start-up circuit is not completely off when stable state, then is sentenced
Determine start-up circuit cisco unity malfunction.
Although transient state verification method simple, intuitive, still have following deficiency: Transient, which is inherently seen, to be had accidentally
Property.The setting of simulation excitation, the calculating process of emulation tool and the incomplete of device model accurately can bring contingency.Wink
State simulation result shows final " degeneracy " state stablized in normal work, and cannot being equal to circuit, there is no other " degeneracy " shapes
State, however not excluded that it is following the fact that: there is also other one or more degeneracy states for circuit, only because simulation excitation is accidental
Property lead to the Transient result stable degeneracy state in normal work just, if change simulation excitation or adjustment emulation essence
Degree, it is possible to the degeneracy state in other mistakes can be stablized.
Therefore, the start-up circuit reliability that band-gap reference circuit is verified using Transient has its limitation, verifying
Process is not enough.
Summary of the invention
The technical problem to be solved in the present invention is that in view of the above drawbacks of the prior art, providing a kind of band-gap reference electricity
The start-up circuit reliability verification method on road.
The technical solution adopted by the present invention to solve the technical problems is: providing a kind of start-up circuit of band-gap reference circuit
Reliability verification method increases ideal voltage source in the key node of the start-up circuit of band-gap reference circuit, comprising steps of
Direct current simulating, verifying is carried out to ideal voltage source and obtains simulation result；
Determine whether start-up circuit works normally according to simulation result.
Preferably, the direct current simulating, verifying is direct current corner verifying, carries out direct current simulating, verifying to ideal voltage source
It obtains simulation result, specifically includes step:
S121, the key node increase ideal voltage source in start-up circuit；
S122, setting simulation excitation；
S123, setting PVT corner；
S124, direct current corner emulation is carried out；
S125, simulation result is obtained.
Preferably, the direct current simulating, verifying is direct current Monte Carlo verifying, carries out direct current emulation to ideal voltage source
Verifying obtains simulation result, specifically includes step:
S131, the key node increase ideal voltage source in start-up circuit；
S132, setting simulation excitation；
S133, direct current Monte Carlo emulation is carried out；
S134, simulation result is obtained.
Preferably, the direct current simulating, verifying is mismatch direct current corner verifying, carries out direct current emulation to ideal voltage source
Verifying obtains simulation result, specifically includes step:
S141, the key node increase ideal voltage source in start-up circuit；
The mismatch value of the threshold V T of the crucial metal-oxide-semiconductor of S142, calculating, mismatch value is increased in the form of voltage source
The grid of metal-oxide-semiconductor；
S143, setting simulation excitation；
S144, setting PVT corner；
S145, direct current corner emulation is carried out；
S146, simulation result is obtained.
Preferably, the calculation formula of the mismatch value σ of the threshold V T of the metal-oxide-semiconductor are as follows:
The W and L is the grid width and grid length of crucial metal-oxide-semiconductor, the A respectivelyVTFor the genuine process constant of metal-oxide-semiconductor.
Preferably, the simulation excitation include device model, simulation type, data type, supply voltage, temperature and/or
Variable element assignment.
Preferably, described that simulation result is obtained to ideal voltage source progress direct current simulating, verifying, it further comprises the steps of:
The DC voltage value of ideal voltage source is scanned, record flows through the DC current values of ideal voltage source.
Preferably, the DC voltage value of the ideal voltage source is variable element VX, the direct current of the ideal voltage source
Flow valuve is IX；
The DC voltage value of the scanning ideal voltage source, record flow through the DC current values of ideal voltage source, specifically:
Direct current simulation scanning is done using the DC voltage value VX as parameter, record flows through the DC current of ideal voltage source
Value IX；The scanning range of the DC voltage value VX is zero to supply voltage.
Preferably, using DC voltage value VX as abscissa, DC current values IX is that ordinate draws IX curve；The basis
Simulation result determines whether start-up circuit works normally, and specifically includes step:
S251, the intersection point number for calculating IX curve and axis of abscissas；
If the number of the intersection point of S252, IX curve and axis of abscissas is 1, determine that start-up circuit can work normally；
If the number of the intersection point of S253, IX curve and axis of abscissas is 0 or 2 or more, determine start-up circuit not
It can work normally.
The technical solution for implementing the start-up circuit reliability verification method of band-gap reference circuit of the present invention, has the following advantages that
Or the utility model has the advantages that ideal voltage source is added in the key node of the start-up circuit of band-gap reference circuit in the present invention, with the desired electrical
The DC voltage value of potential source carries out direct current simulating, verifying as scanning variable, more fully to verify the whether normal work of start-up circuit
Make；Direct current simulating, verifying can more fully verify circuit all stable states that may be present；More targeted carry out circuit
Design improves production yield rate, reduces product risks.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it is therefore apparent that drawings in the following description are only some embodiments of the invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Scheme, in attached drawing:
Fig. 1 is the transient state corner simulation contact surface of the reliability demonstration of prior art BGR start-up circuit；
Fig. 2 is the transient state Monte Carlo simulation contact surface of the reliability demonstration of prior art BGR start-up circuit；
Fig. 3 is the circuit diagram of the band-gap reference circuit embodiment with start-up circuit of the prior art；
Fig. 4 is the circuit diagram in key node increase ideal voltage source of band-gap reference circuit embodiment of the present invention；
Fig. 5 is the circuit of band-gap reference circuit embodiment of the present invention increased to mismatch value in the form of voltage source in circuit
Schematic diagram；
Fig. 6 is the simple flow chart of the start-up circuit reliability verification method embodiment of band-gap reference circuit of the present invention；
Fig. 7 is the entire flow figure of the start-up circuit reliability verification method embodiment of band-gap reference circuit of the present invention；
Fig. 8 is the direct current corner emulation of the start-up circuit reliability verification method embodiment of band-gap reference circuit of the present invention
Flow chart；
Fig. 9 is the direct current Monte of the start-up circuit reliability verification method embodiment of band-gap reference circuit of the present invention
Carlo simulation contact surface；
Figure 10 is the mismatch direct current of the start-up circuit reliability verification method embodiment of band-gap reference circuit of the present invention
Corner simulation contact surface；
Figure 11 is the direct current simulation result of the start-up circuit reliability verification method embodiment of band-gap reference circuit of the present invention
Schematic diagram.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, the various examples that will be described below
Property embodiment will refer to corresponding attached drawing, these attached drawings constitute a part of exemplary embodiment, and which describe realizations
The various exemplary embodiments that the present invention may use, unless otherwise indicated, same numbers in different attached drawings indicate it is identical or
Similar element.Embodiment described in following exemplary embodiment does not represent all implementations consistent with this disclosure
Mode.It should be appreciated that they are only and as detailed in the attached claim, some aspects disclosed by the invention are consistent
The example of device and method also can be used other embodiments, or carry out structurally and functionally to embodiment enumerated herein
Modification, without departing from the scope of the present invention and essence.In other cases, it omits to well-known system, device, electricity
The detailed description of road and method, in case unnecessary details interferes the description of the utility model.
In the description of the present invention, it is to be understood that, term " first ", " second " are used for description purposes only, and cannot
It is interpreted as indication or suggestion relative importance or implicitly indicates the quantity of indicated technical characteristic.Limit as a result, " the
One ", the feature of " second " can explicitly or implicitly include one or more feature.In description of the invention
In, the meaning of " plurality " is two or more, unless otherwise specifically defined.It should be noted that unless otherwise
It specific regulation and limits, term " connected ", " connection " shall be understood in a broad sense, for example, it may be being electrically connected or can phase intercommunication
Letter；It can be directly connected, be also possible to can be the connection inside two elements or two indirectly connected through an intermediary
The interaction relationship of element.Term as used herein "and/or" includes any of one or more relevant listed items
And all combination.For the ordinary skill in the art, above-mentioned term can be understood at this as the case may be
Concrete meaning in invention.
In order to illustrate technical solutions according to the invention, the following is a description of specific embodiments.Fig. 3 is normal at present
The band-gap reference circuit with start-up circuit seen is basic circuit, the technical solution that the present invention will be described in detail with Fig. 3.Such as figure
4-11 shows schematic diagram provided in an embodiment of the present invention, for ease of description, illustrates only relevant to the embodiment of the present invention
Part.
The start-up circuit Transient verifying of band-gap reference circuit has its limitation, and circuit stable state is tested in direct current emulation
Card is then relatively reliable, because of direct current emulation inherently static Simulation, substantive process is exactly to circuit stable state progress side
The process that journey solves.When the start-up circuit reliability to band-gap reference circuit is verified, to determine that circuit does not have other letters
And state, direct current emulation verification method can be used.As long as direct current, which emulates, determines only one stable state of circuit, in conjunction with Transient
Verifying will be made more abundant as a result, then determining whether start-up circuit works normally.
The present invention using the band-gap reference circuit of Fig. 3 as example, the band-gap reference circuit include sequentially connected start-up circuit,
Amplifier circuit and two core branches, the effect of amplifier circuit are to guarantee that core branch and amplifier circuit input terminal connect
Two node voltages connect are equal.As illustrated in figures 4-5, increase desired electrical in the key node of the start-up circuit of band-gap reference circuit
Potential source.Specifically, the key node of start-up circuit is generally the grid of the PMOS tube of core circuit.The direct current of ideal voltage source
Pressure value is variable element VX, and the DC current values of the ideal voltage source are IX.More specifically, the direct current of ideal voltage source is scanned
Voltage value, record flow through the DC current values of ideal voltage source, specifically: direct current emulation is done using DC voltage value VX as parameter
Scanning, record flow through the DC current values IX of ideal voltage source, wherein the scanning range of DC voltage value VX is zero electric to power supply
Pressure.
Specifically, ideal voltage source is a kind of ideal circuit element, the end voltage of ideal voltage source is one constant normal
Number, unrelated with the size of electric current, electric current is determined by load resistance.The C-V characteristic (being also external characteristic curve) of ideal voltage source is
A piece straight line parallel with I axis.Consider that ideal voltage source is purely an energy supply element from energy viewpoint, supply external circuit consumption
Energy element R is the power supply of a unlimited large capacity with energy.
As shown in fig. 6-7, the present invention provides a kind of start-up circuit reliability verification method embodiment of band-gap reference circuit,
Increase ideal voltage source in the key node of the start-up circuit of band-gap reference circuit, comprising steps of
Direct current simulating, verifying is carried out to ideal voltage source and obtains simulation result；Specifically, direct current simulating, verifying includes direct current
Corner verifying, direct current Monte Carlo verifying and mismatch direct current corner verifying.
Determine whether start-up circuit works normally according to simulation result.
In the present embodiment, method comprising steps of
S100, simulation result is obtained to ideal voltage source progress direct current simulating, verifying.Specifically, S100 can be with are as follows:
S120, setting PVT corner carry out direct current corner verifying to ideal voltage source and obtain simulation result.
S130, simulation result is obtained to ideal voltage source progress direct current Monte Carlo verifying.
S140, simulation result is obtained to ideal voltage source progress mismatch direct current corner verifying.
S200, determine whether start-up circuit works normally according to simulation result.
Specifically, step S120, S130, S140 of the method for the present invention can select one of them according to the actual situation or appoint
It anticipates two and carries out simulating, verifying, can also all be verified in the case where simulation time and emulation tool are supported.
In the present embodiment, as shown in figure 8, direct current corner verifying is to consider all possible process corner (Process
Corner), direct current simulating, verifying is carried out in the case of supply voltage, variation of ambient temperature；As shown in figure 9, direct current Monte Carlo
Verifying be then random introduction means mismatch after, carry out direct current simulating, verifying in typical case.As shown in Figure 10, it combines
(the influence size according to metal-oxide-semiconductor mismatch to circuit output is sentenced for the verifying thinking of Fig. 8 and Fig. 9, the i.e. metal-oxide-semiconductor of manual calculations key
It is disconnected) mismatch value of threshold V T, mismatch value is increased to the grid of metal-oxide-semiconductor in the form of voltage source, carries out mismatch direct current
Corner verifying.
As shown in figure 8, direct current simulating, verifying is direct current corner verifying, direct current simulating, verifying is carried out to ideal voltage source and is obtained
Simulation result out specifically includes step:
S121, the key node increase ideal voltage source in start-up circuit；
S122, setting simulation excitation；
S123, setting PVT corner；
S124, direct current corner emulation is carried out；
S125, simulation result is obtained.
As shown in figure 9, direct current simulating, verifying is direct current Monte Carlo verifying, direct current emulation is carried out to ideal voltage source
Verifying obtains simulation result, specifically includes step:
S131, the key node increase ideal voltage source in start-up circuit；
S132, setting simulation excitation；
S133, direct current Monte Carlo emulation is carried out；
S134, simulation result is obtained.
In the present embodiment, the verifying thinking for combining direct current corner verifying and direct current Monte Carlo verifying, that is, count
The mismatch value for calculating the threshold V T of crucial metal-oxide-semiconductor (the influence size judgement according to metal-oxide-semiconductor mismatch to circuit output), will lose
Increase to the grid of metal-oxide-semiconductor in the form of voltage source with value, and PVT corner is set, carries out mismatch direct current corner verifying.
As shown in Figure 10, direct current simulating, verifying is mismatch direct current corner verifying, carries out direct current emulation to ideal voltage source
Verifying obtains simulation result, specifically includes step:
S141, the key node increase ideal voltage source in start-up circuit；
The mismatch value of the threshold V T of the crucial PMOS tube of S142, calculating, mismatch value is increased in the form of voltage source
The grid of metal-oxide-semiconductor；There is mismatch value, mismatch value is added to the grid of metal-oxide-semiconductor, can just obtain the electric current of mismatch direct current verifying
Direct current curve (such as Figure 11).Specifically, metal-oxide-semiconductor that might not be all in start-up circuit is it is necessary to do so, according to difference
Circuit, select which metal-oxide-semiconductor do these operations also can be different.More specifically, the key node of start-up circuit is generally core
The grid of the PMOS tube on electrocardio road, the key node of different band-gap reference circuits be also it is different, physical circuit specifically divides
Analysis.
Specifically, the calculation formula of the mismatch value σ of the threshold V T of metal-oxide-semiconductor are as follows:
The σ is the mismatch value (standard variance) of the threshold voltage of metal-oxide-semiconductor, and unit is volt, and W and L are metal-oxide-semiconductor respectively
Grid width and grid length, AVTFor the genuine process constant (being provided by manufacturer) of metal-oxide-semiconductor, physical significance is two unit areas
Metal-oxide-semiconductor cut-in voltage mismatch value, the A of different types of metal-oxide-semiconductorVTIt is different.It can be calculated often by above-mentioned formula
The VT mismatch value of σ: the first metal-oxide-semiconductor of a metal-oxide-semiconductor is σ1, the VT mismatch value of second metal-oxide-semiconductor is σ2... the VT of n-th of metal-oxide-semiconductor
Mismatch value is σn(n is natural number).
Then, an ideal voltage source is added in the grid of each metal-oxide-semiconductor, as shown in figure 5, its D. C. value is set as Kn*
ΔVTn, wherein Δ VTnFor the deviation of n-th of metal-oxide-semiconductor VT, 3 standard variances (corresponding 99.7% coverage rate) or 6 are generally taken
A standard variance (corresponding 99.9% coverage rate)；Kn is coefficient, is assigned a value of 1 or -1 in emulation.Finally carry out direct current
Corner verifying, i.e., scan VX from zero to VDD, carries out DC analysis to circuit.
S143, setting simulation excitation；
S144, setting PVT corner；
S145, direct current corner emulation is carried out；
S146, simulation result is obtained.
After emulation, the direct current simulation result of IX is checked: using DC voltage value VX as abscissa, DC current values IX
IX curve is drawn for ordinate；Determine whether start-up circuit works normally according to simulation result, specifically include step:
The number of the intersection point of S251, calculating IX curve and axis of abscissas；That is the number of VX is corresponded to when IX=0.
If the number of the intersection point of S252, IX curve and axis of abscissas is 1 (i.e. one and only one intersection point), judgement is opened
Dynamic circuit can work normally；
If the number of the intersection point of S253, IX curve and axis of abscissas is that 0 (i.e. no intersection point) or 2 or more (have
More than two intersection points), then determine that start-up circuit can not work normally.
As shown in figure 11, several examples of direct current simulation results are given, IX has with horizontal axis in example 1 and example 2
And only one intersection point A, it can determine that start-up circuit can work normally, in example 3 other than having intersection point A, also
Two intersection points Bs and C, it is clear that there are three stable states for it, stablize even if Transient verifying is last in normal condition A, chip production
After out, it perhaps can stablize degeneracy the state B or C in mistake, start-up circuit has very big risk, IX and horizontal axis in example 4
There is no intersection point, circuit cisco unity malfunction.Mismatch direct current corner verification method verifying number is relatively more, and the verification time can compare
It is long, but coverage rate is very wide, verifies the most abundant.Because that takes into account the folded of process corner, supply voltage, temperature and device mismatch
Add influence.In practical operation, can be required according to verification time, verification tool, verifying to weigh selection using three kinds of authentications
One of method is a variety of.
Ideal voltage source is added in the key node of the start-up circuit of band-gap reference circuit in the present invention, with the ideal voltage source
DC voltage value as scanning variable carry out direct current emulation, more fully to verify whether start-up circuit works normally；Direct current
Simulating, verifying can more fully verify circuit all stable states that may be present；It is more targeted to instruct circuit design, it mentions
High production yield rate reduces product risks.
The above is merely preferred embodiments of the present invention, those skilled in the art know, are not departing from essence of the invention
In the case where mind and range, various changes or equivalent replacement can be carried out to these features and embodiment.In addition, of the invention
Under introduction, it can modify to these features and embodiment to adapt to particular situation and material without departing from of the invention
Spirit and scope.Therefore, the present invention is not limited to the particular embodiment disclosed, and the right of fallen with the application is wanted
The embodiment in range is asked to belong to protection scope of the present invention.
Claims (9)
1. a kind of start-up circuit reliability verification method of band-gap reference circuit, which is characterized in that in the band-gap reference circuit
Start-up circuit key node increase ideal voltage source, comprising steps of
Direct current simulating, verifying is carried out to the ideal voltage source and obtains simulation result；
Determine whether the start-up circuit works normally according to the simulation result.
2. start-up circuit reliability verification method according to claim 1, which is characterized in that the direct current simulating, verifying is
Direct current corner verifying, it is described that simulation result is obtained to ideal voltage source progress direct current simulating, verifying, specifically include step:
S121, the key node increase ideal voltage source in the start-up circuit；
S122, setting simulation excitation；
S123, setting PVT corner；
S124, direct current corner emulation is carried out；
S125, the simulation result is obtained.
3. start-up circuit reliability verification method according to claim 1 or 2, which is characterized in that the direct current emulation is tested
Card is that direct current Monte Carlo is verified, described to obtain simulation result to ideal voltage source progress direct current simulating, verifying, specifically
Comprising steps of
S131, the key node increase ideal voltage source in the start-up circuit；
S132, setting simulation excitation；
S133, direct current Monte Carlo emulation is carried out；
S134, the simulation result is obtained.
4. start-up circuit reliability verification method according to claim 1-3, which is characterized in that the direct current is imitative
It is really verified as mismatch direct current corner verifying, it is described that simulation result is obtained to ideal voltage source progress direct current simulating, verifying,
Specifically include step:
S141, the key node increase ideal voltage source in the start-up circuit；
The mismatch value of the threshold V T of the crucial metal-oxide-semiconductor of S142, calculating, the mismatch value is increased in the form of voltage source
To the grid of the metal-oxide-semiconductor；
S143, setting simulation excitation；
S144, setting PVT corner；
S145, direct current corner emulation is carried out；
S146, the simulation result is obtained.
5. start-up circuit reliability verification method according to claim 4, which is characterized in that the threshold value electricity of the metal-oxide-semiconductor
Press the calculation formula of the mismatch value σ of VT are as follows:
The W and L is the grid width and grid length of the crucial metal-oxide-semiconductor, the A respectivelyVTIt is normal for the genuine technique of the metal-oxide-semiconductor
Number.
6. start-up circuit reliability verification method according to claim 4, which is characterized in that the simulation excitation includes device
Part model, simulation type, data type, supply voltage, temperature and/or variable element assignment.
7. start-up circuit reliability verification method according to claim 1, which is characterized in that described to the desired voltage
Source carries out direct current simulating, verifying and obtains simulation result, further comprises the steps of:
The DC voltage value of the ideal voltage source is scanned, record flows through the DC current values of the ideal voltage source.
8. start-up circuit reliability verification method according to claim 7, which is characterized in that the ideal voltage source it is straight
Stream voltage value is variable element VX, and the DC current values of the ideal voltage source are IX；
The DC voltage value of the scanning ideal voltage source, record flow through the DC current values of the ideal voltage source, tool
Body are as follows:
Direct current simulation scanning is done using the DC voltage value VX as parameter, record flows through the DC current of the ideal voltage source
Value IX；The scanning range of the VX is zero to supply voltage.
9. start-up circuit reliability verification method according to claim 8, which is characterized in that with the DC voltage value VX
For abscissa, the DC current values IX is that ordinate draws IX curve；It is described that the starting is determined according to the simulation result
Whether circuit works normally, and specifically includes step:
S251, the number for calculating the IX curve with the intersection point of the axis of abscissas；
If the number of the intersection point of S252, the IX curve and the axis of abscissas is 1, determine that the start-up circuit can be normal
Work；
If the number of the intersection point of S253, the IX curve and the axis of abscissas is 0 or 2 or more, opened described in judgement
Dynamic circuit can not work normally.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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Denomination of invention: A reliability verification method of starting circuit for bandgap reference circuit Effective date of registration: 20211117 Granted publication date: 20210629 Pledgee: Shenzhen hi tech investment small loan Co.,Ltd. Pledgor: SHENZHEN BETTERLIFE ELECTRONIC SCIENCE AND TECHNOLOGY Co.,Ltd. Registration number: Y2021980012684 |