CN110225649B - A Novel Electromagnetic Bandgap Structure for Suppressing Synchronous Switching Noise - Google Patents
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Abstract
Description
技术领域technical field
本发明涉及一种电磁带隙结构单元小型化的电源分配网络,具体涉及一种用于抑制同步开关噪声的新型电磁带隙结构。The invention relates to a power distribution network with miniaturized electromagnetic bandgap structural units, in particular to a novel electromagnetic bandgap structure for suppressing synchronous switching noise.
背景技术Background technique
随着微电子技术的飞速发展,现代电子系统对高性能、小型化、高集成度和多功能性的要求越来越高。然而,高速数字电路的异步切换会引起同步开关噪声(simultaneousswitching noise,SSN),尤其是在边缘速率均匀、工作频率高、电源电压低的情况下,电源和地面之间的SSN会引起严重的信号和电源完整性问题。因此,在混合信号系统中,抑制SSN在与良好信号相关的宽阻带内传播是非常有必要的。近年来,许多研究人员尝试了各种方法来处理SSN问题。例如增加解耦电容、选择通孔的数量和位置、采用差分互连等方式,这些方法可以有效地抑制SSN的传播。然而,这些方法存在一些不足之处,要么不能有效地抑制高频噪声,要么成本太高而无法有效地实现。With the rapid development of microelectronics technology, modern electronic systems have higher and higher requirements for high performance, miniaturization, high integration and versatility. However, asynchronous switching of high-speed digital circuits can cause synchronous switching noise (SSN), especially when the edge rate is uniform, the operating frequency is high, and the supply voltage is low, the SSN between the power supply and ground can cause severe signaling and power integrity issues. Therefore, in mixed-signal systems, it is very necessary to suppress SSN propagation in the wide stopband associated with good signals. In recent years, many researchers have tried various methods to deal with the SSN problem. For example, increasing decoupling capacitance, selecting the number and position of vias, and adopting differential interconnection, etc., these methods can effectively suppress the propagation of SSN. However, these methods suffer from some inadequacies, either they cannot suppress high-frequency noise effectively, or they are too expensive to implement effectively.
电磁带隙结构(electromagnetic band-gap structure,EBG)是一种周期性结构,它起源于光子带隙结构,是天线领域中最早使用的一种周期结构。近年来,由于该结构具有高阻抗特性,电磁波不能在某些频段传播,尤其是在抑制SSN方面具有很大的优点,因此EBG结构在混合信号系统中具有广泛的应用前景。目前常用的平面型EBG结构是采用在电源平面上刻蚀带隙结构,来抑制同步开关噪声,但目前的电磁带隙结构在对噪声达到想要的抑制深度的同时,或是不能更好地降低下截止频率,或是不能实现超宽带抑制。本发明提出的电磁带隙结构可以在抑制深度达到-40dB的同时,其抑制带宽范围为0.26GHz-25GHz,可以有效降低下截止频率,实现对电源平面与地平面之间同步开关噪声的超宽带抑制。Electromagnetic band-gap structure (EBG) is a periodic structure, which originated from the photonic band-gap structure, and is the earliest periodic structure used in the field of antennas. In recent years, due to the high impedance characteristics of the structure, electromagnetic waves cannot propagate in certain frequency bands, especially in suppressing SSN, which has great advantages, so the EBG structure has a wide range of application prospects in mixed-signal systems. At present, the commonly used planar EBG structure adopts the bandgap structure etched on the power plane to suppress the synchronous switching noise. Lower cutoff frequency, or UWB rejection cannot be achieved. The electromagnetic bandgap structure proposed by the invention can suppress the depth of -40dB while the suppression bandwidth range is 0.26GHz-25GHz, which can effectively reduce the lower cut-off frequency and realize the ultra-wideband for synchronous switching noise between the power plane and the ground plane. inhibition.
发明内容SUMMARY OF THE INVENTION
本发明的目的主要是针对现有技术的不足,提出了一种新型电磁带隙结构,在对同步开关噪声达到所需要的抑制效果的同时,可以有效降低下截止频率,提高阻带带宽。The purpose of the present invention is mainly to address the deficiencies of the prior art, and propose a novel electromagnetic bandgap structure, which can effectively reduce the lower cutoff frequency and increase the stopband bandwidth while achieving the required suppression effect on synchronous switching noise.
为达到上述目的,本发明按以下技术方案实现:To achieve the above object, the present invention is realized according to the following technical solutions:
本发明提供一种新型电磁带隙结构,为周期性结构,负载在绝缘介质层的上表面,绝缘介质层的下表面设置地平面;The invention provides a novel electromagnetic bandgap structure, which is a periodic structure, loaded on the upper surface of an insulating medium layer, and a ground plane is set on the lower surface of the insulating medium layer;
每个结构单元为正方形结构,刻蚀在电源平面;电源平面每边刻蚀有一矩形缺口,该矩形缺口的左侧壁高度小于右侧壁高度,且该缺口的底部中点引出一条微带线;所述微带线沿逆时针方向围绕电源平面至其下一条边的末端,且该条微带线位于“下一条边”部分将此边矩形缺口引出的微带线位于该边部分包围;同时该条微带线与相邻结构单元微带线相连,进而构成S型微带线;上述四个矩形缺口引出的微带线中心对称设置;Each structural unit is a square structure and is etched on the power plane; each side of the power plane is etched with a rectangular notch, the height of the left side wall of the rectangular notch is less than the height of the right side wall, and a microstrip line is drawn from the midpoint of the bottom of the notch ; The microstrip line surrounds the power plane in the counterclockwise direction to the end of its next side, and the microstrip line is located in the "next side" part and is surrounded by the microstrip line drawn from the rectangular gap on this side; At the same time, the microstrip line is connected with the adjacent structural unit microstrip line to form an S-type microstrip line; the center of the microstrip line drawn from the above-mentioned four rectangular gaps is symmetrically arranged;
所述电源平面的中心区域为镂空,内嵌一个小的方形平面板,四个角分别通过四个L型微带线与电源平面连接,所述四个L型微带线沿顺时针围绕,且关于中心对称。The central area of the power plane is hollowed out, and a small square plane board is embedded, and the four corners are respectively connected to the power plane through four L-shaped microstrip lines, and the four L-shaped microstrip lines are surrounded in a clockwise direction. and symmetrical about the center.
进一步优选,所述电磁带隙结构的结构单元大小为30mm×30mm,单元之间通过S型微带线相互连接,构成一个3×3的周期性结构。所述电磁带隙结构中内嵌有3个端口,其中一个端口作为输入端口,其余2个端口作为输出端口。Further preferably, the size of the structural units of the electromagnetic bandgap structure is 30mm×30mm, and the units are connected to each other by S-type microstrip lines, forming a 3×3 periodic structure. Three ports are embedded in the electromagnetic bandgap structure, one of which is used as an input port, and the other two ports are used as output ports.
进一步优选,矩形缺口的左侧壁高度a1为4mm,右侧壁高度a2为4.4mm,矩形缺口内S型微带线距离内壁s为0.2mm,左侧壁距离电源平面上与该矩形缺口所在边垂直的边的最近距离d3为14.4mm,右侧壁距离电源平面上与该矩形缺口所在边垂直的边的最近距离d2为14mm。Further preferably, the height a1 of the left side wall of the rectangular notch is 4mm, the height a2 of the right side wall is 4.4mm, the distance between the S-shaped microstrip line in the rectangular notch and the inner wall s is 0.2mm, and the distance between the left side wall and the rectangular notch on the power plane is 0.2mm. The shortest distance d3 of the vertical side is 14.4mm, and the shortest distance d2 of the right side wall from the side vertical to the side of the rectangular notch on the power plane is 14mm.
S型微带线位于矩形缺口内以及被相邻S型微带线围合部分的线宽w1为0.2mm,其余部分线宽g1为0.1mm。The line width w1 of the S-shaped microstrip line located in the rectangular notch and the part enclosed by the adjacent S-shaped microstrip line is 0.2 mm, and the line width g1 of the remaining part is 0.1 mm.
结构单元上位于两对边上的矩形缺口最近距离c为20.6mm。The closest distance c of the rectangular notch on the two opposite sides of the structural unit is 20.6mm.
S型微带线用于围合相邻S型微带线部分的长度d1为29.4mm。The length d1 of the S-shaped microstrip line used to enclose adjacent S-shaped microstrip lines is 29.4 mm.
电源平面的中心镂空区域为边长a3的正方形,a3=14.4mm。The central hollow area of the power plane is a square with side length a3, a3=14.4mm.
方形平面板为边长a4的正方形,a4=12.8mm。The square plane plate is a square with side length a4, a4=12.8mm.
L型微带线用于连接方形平面板部分线宽w2为0.2mm。The L-shaped microstrip line is used to connect the part of the square flat plate with a line width w2 of 0.2mm.
L型微带线用于连接电源平面部分线宽w3为0.2mm。The L-shaped microstrip line is used to connect the power plane and the line width w3 is 0.2mm.
L型微带线用于连接电源平面部分与方形平面板间的空隙宽度g2为0.2mm。The L-shaped microstrip line is used to connect the power plane part and the gap width g2 between the square plane plate is 0.2mm.
所述电磁带隙结构刻蚀在电源平面上,地面为一完整平面,从而对电源平面与地平面之间的同步开关噪声进行抑制。所述绝缘介质层为FR-4材料,为有耗介质材料,其相对介电常数为4.4,介质厚度为0.4mm,损耗角正切值为0.02。所述的地平面为一完整平面,保证了信号完整性不受影响。The electromagnetic band gap structure is etched on the power plane, and the ground is a complete plane, so as to suppress the synchronous switching noise between the power plane and the ground plane. The insulating dielectric layer is made of FR-4 material, which is a lossy dielectric material, with a relative dielectric constant of 4.4, a dielectric thickness of 0.4 mm, and a loss tangent value of 0.02. The ground plane is a complete plane, which ensures that the signal integrity is not affected.
本发明与现有技术相比,具有如下的突出实质性特点:Compared with the prior art, the present invention has the following outstanding substantive features:
所述电磁带隙结构的相邻结构单元微带线相互连接,进而构成一个S型形状的桥结构,增大了电磁带隙结构的桥结构的电感,从而降低了噪声抑制的下截止频率,S型形状的桥结构将SSN噪声抑制在阻带范围内无法向外传播,从而有效增大噪声抑制的带宽范围,实现对电源平面与地平面之间的同步开关噪声的超宽带抑制。本发明在抑制深度为-40dB时,其抑制带宽范围为0.26GHz-25GHz。The adjacent structural unit microstrip lines of the electromagnetic bandgap structure are connected to each other, thereby forming an S-shaped bridge structure, which increases the inductance of the bridge structure of the electromagnetic bandgap structure, thereby reducing the lower cut-off frequency of noise suppression, The S-shaped bridge structure suppresses the SSN noise in the stopband range and cannot propagate outward, thereby effectively increasing the bandwidth range of noise suppression and realizing ultra-wideband suppression of synchronous switching noise between the power plane and the ground plane. When the suppression depth of the present invention is -40dB, the suppression bandwidth range is 0.26GHz-25GHz.
附图说明Description of drawings
图1是本发明结构由顶层至底层示意图;1 is a schematic diagram of the structure of the present invention from top to bottom;
图2是本发明结构基本单元的示意图;Fig. 2 is the schematic diagram of the structural basic unit of the present invention;
图3是本发明结构基本单元的大的平面板示意图;Figure 3 is a schematic diagram of a large flat plate of the structural basic unit of the present invention;
图4为本发明结构基本单元的参数标注图:(a)外部参数标注图,(b)内部参数标注图;Fig. 4 is the parameter labeling drawing of the structural basic unit of the present invention: (a) external parameter labeling drawing, (b) internal parameter labeling drawing;
图5是本发明的电磁带隙结构平面图;Fig. 5 is the electromagnetic bandgap structure plan view of the present invention;
图6是本发明的各端口的噪声抑制传输系数图;Fig. 6 is the noise suppression transmission coefficient diagram of each port of the present invention;
图7是本发明结构与其他典型电磁带隙结构的噪声抑制性能对比图。FIG. 7 is a comparison diagram of the noise suppression performance of the structure of the present invention and other typical electromagnetic bandgap structures.
具体实施方式Detailed ways
下面将结合附图具体实施例对本发明作进一步详细说明。The present invention will be further described in detail below with reference to the specific embodiments of the accompanying drawings.
如图1所示是本发明的结构示意图,由顶层至底层结构分别为电源面1,绝缘介质层2,完整地平面3,其中所述的新型电磁带隙结构刻蚀在电源面上。Figure 1 is a schematic diagram of the structure of the present invention. The top to bottom structures are power plane 1, insulating medium layer 2, and complete ground plane 3, wherein the novel electromagnetic bandgap structure is etched on the power plane.
如图2所示为本发明结构基本单元示意图,其基本单元结构是在一个如图3所示的电源平面每边刻蚀有一竖直线凹槽,且该凹槽的底部中点引出一条微带线,所述微带线沿逆时针方向围绕电源平面至其下一条边的末端;在所述电源平面的中心区域上为镂空区,内嵌一个小的方形平面板,四边分别通过四个L型微带线与电源平面连接,所述四个L型微带线沿顺时针围绕,且关于中心对称。Figure 2 is a schematic diagram of the basic unit of the structure of the present invention. The basic unit structure is that a vertical line groove is etched on each side of a power plane as shown in Figure 3, and a micro-groove is drawn from the midpoint of the bottom of the groove. Strip line, the microstrip line surrounds the power plane in the counterclockwise direction to the end of its next side; the central area of the power plane is a hollow area, and a small square plane board is embedded, and the four sides pass through four The L-shaped microstrip lines are connected to the power plane, and the four L-shaped microstrip lines surround clockwise and are symmetrical about the center.
图4(a)、图4(b)分别为外部和内部参数标注图,d1代表所述电磁带隙基本单元结构的尺寸大小,其中a1、a2分别代表大平面板上凹槽的较短和较长边的长度,w1代表凹槽引出微带线的宽度,s代表微带线两侧的槽的宽度,d2、d3分别代表大平面板上凹槽两侧较短和较长边的长度,c代表同一水平线上的两凹槽的距离,a4代表小方形平面板的尺寸大小,w3代表L型微带线的宽度,g2代表L型微带线两侧的槽的宽度,通过优化得到各参数的数值,如表1所示。Figures 4(a) and 4(b) are the external and internal parameter annotation diagrams, respectively, d1 represents the size of the basic unit structure of the electromagnetic bandgap, and a1 and a2 represent the shorter and shorter grooves on the large flat plate, respectively. The length of the long side, w1 represents the width of the microstrip line leading out of the groove, s represents the width of the groove on both sides of the microstrip line, d2, d3 represent the lengths of the shorter and longer sides of the groove on the large flat plate, c Represents the distance between two grooves on the same horizontal line, a4 represents the size of the small square flat plate, w3 represents the width of the L-shaped microstrip line, g2 represents the width of the grooves on both sides of the L-shaped microstrip line, and each parameter is obtained through optimization. values, as shown in Table 1.
表1各参数数值Table 1 Values of each parameter
如图5所示是本发明的电磁带隙结构示意图,其整体尺寸大小为长90mm×宽90mm,呈3行×3列分布的9个结构单元。所述电磁带隙结构中内嵌如图5所示的3个端口,其中端口1(-30mm,-30mm)作为输入端口,端口2(30mm,30mm)和端口3(30mm,0mm)作为输出端口。As shown in FIG. 5 is a schematic diagram of the electromagnetic band gap structure of the present invention, the overall size of which is 90 mm long x 90 mm wide, and 9 structural units distributed in 3 rows and 3 columns. Three ports as shown in Figure 5 are embedded in the electromagnetic bandgap structure, wherein port 1 (-30mm, -30mm) is used as input port, and port 2 (30mm, 30mm) and port 3 (30mm, 0mm) are used as output port.
如图6所示是本发明的各端口的噪声抑制传输系数图,当端口1作为噪声输入端口时,其余2个端口位置与端口1之间的S参数图可看出所述电磁带隙结构对噪声的抑制作用。Figure 6 shows the noise suppression transmission coefficient diagram of each port of the present invention. When port 1 is used as the noise input port, the S-parameter diagram between the other two port positions and port 1 shows the electromagnetic bandgap structure. Noise suppression.
如图7所示是本发明结构与传统的L-bridge电磁带隙结构、传统的S-bridge电磁带隙结构关于S21参数的对比图。当对噪声的抑制深度为-40dB时,本发明电磁带隙结构能在0.26GHz-25GHz频率范围内对同步开关噪声进行抑制,可看出本发明电磁带隙结构的下截止频率明显较低,且其噪声抑制带宽范围大于传统的L-bridge电磁带隙结构和传统的S-bridge电磁带隙结构的带宽范围。As shown in FIG. 7 , the structure of the present invention is compared with the traditional L-bridge electromagnetic bandgap structure and the traditional S-bridge electromagnetic bandgap structure with respect to the S21 parameter. When the noise suppression depth is -40dB, the electromagnetic bandgap structure of the present invention can suppress the synchronous switching noise in the frequency range of 0.26GHz-25GHz. It can be seen that the lower cutoff frequency of the electromagnetic bandgap structure of the present invention is obviously lower, And its noise suppression bandwidth is larger than that of the traditional L-bridge electromagnetic bandgap structure and the traditional S-bridge electromagnetic bandgap structure.
上面结合附图对本发明进行了示例性描述,显然本发明具体实现并不受上述方式的限制,只要采用了本发明的方法构思和技术方案进行的各种非实质性的改进,或未经改进将本发明的构思和技术方案直接应用于其它场合,均在本发明的保护范围之内。The present invention has been exemplarily described above in conjunction with the accompanying drawings. Obviously, the specific implementation of the present invention is not limited by the above methods, as long as various insubstantial improvements made by the method concept and technical solutions of the present invention are adopted, or no improvement is made. It is within the protection scope of the present invention to directly apply the concepts and technical solutions of the present invention to other occasions.
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CN102395245B (en) * | 2011-07-22 | 2013-06-12 | 西安电子科技大学 | U-shaped electromagnetic band gap circuit board with low-frequency simultaneous switching noise inhibiting function |
CN102694221A (en) * | 2012-05-31 | 2012-09-26 | 北京航空航天大学 | Miniature embedded S-shaped bridge plane electromagnetic bandgap structure and building method thereof |
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