CN110224617B - Reverse connection preventing silicon controlled rectifier circuit - Google Patents
Reverse connection preventing silicon controlled rectifier circuit Download PDFInfo
- Publication number
- CN110224617B CN110224617B CN201910610900.0A CN201910610900A CN110224617B CN 110224617 B CN110224617 B CN 110224617B CN 201910610900 A CN201910610900 A CN 201910610900A CN 110224617 B CN110224617 B CN 110224617B
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- diode
- resistor
- silicon controlled
- controlled rectifier
- rectifying
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 109
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 109
- 239000010703 silicon Substances 0.000 title claims abstract description 109
- 238000002955 isolation Methods 0.000 claims abstract description 64
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 33
- 230000005669 field effect Effects 0.000 claims description 37
- 230000005611 electricity Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
- H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/145—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
- H02M7/155—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention discloses a reverse connection-preventing silicon controlled rectifier circuit, which comprises a reverse rectifying unit and a reverse control unit, wherein two output ends (V1, V2) of the rectifying circuit are correctly connected with a storage battery, a diode D2 is conducted, a voltage stabilizing diode D3 provides a stable high level for a control electrode of a silicon controlled rectifier Q2, the silicon controlled rectifier Q2 is conducted, a silicon controlled rectifier Q1 of the rectifying circuit is controlled to be extremely high level, and the rectifying circuit with an alternating current input at an input end P works normally; two output ends (V1, V2) of the rectifying circuit are reversely connected with the storage battery, the primary side of the isolation trigger U is powered on and conducted, the diode D4 and the diode D2 are conducted, the isolation trigger U is forward biased, the silicon controlled rectifier Q2 is controlled to be extremely low level, the silicon controlled rectifier Q2 is not conducted, the silicon controlled rectifier Q1 of the rectifying circuit is controlled to be extremely low level, the silicon controlled rectifier Q1 is always not conducted, the rectifying circuit does not work, and damage to the rectifying circuit and the storage battery caused by reverse connection of the storage battery is effectively avoided.
Description
Technical Field
The invention relates to a rectifying circuit, in particular to a reverse connection-preventing silicon controlled rectifier rectifying circuit.
Background
The rectifying circuit is used as a circuit for converting alternating current electric energy into direct current electric energy, and is commonly used in various charging systems, the output end of the rectifying circuit is directly connected with a storage battery, and the direct current obtained after rectification of the rectifying circuit charges the storage battery. Under this kind of application, it is often required that rectifying circuit output and battery positive and negative pole can be correctly connected, in case rectifying circuit output and battery positive and negative pole misconnection (connect the contrary), cause the short circuit, the huge instantaneous current that the short circuit produced, then will probably damage battery and circuit itself.
Disclosure of Invention
The invention aims to provide a reverse connection-preventing silicon controlled rectifier circuit.
In order to achieve the purpose of the invention, the technical scheme is now described in detail: the utility model provides a prevent silicon controlled rectifier rectification circuit of reverse connection, includes first anti-rectification unit and prevents reverse control unit, wherein:
the first anti-reverse rectifying unit comprises an isolation trigger U, a diode D2, a voltage stabilizing diode D3, a diode D4, a silicon controlled rectifier Q2, a resistor R1, a resistor R2 and a rectifying circuit formed by the diode D1 and a silicon controlled rectifier Q1 with anodes connected with the cathodes of the diode D1, wherein the cathodes of the diode D1 are input ends P of the rectifying circuit, the cathodes of the silicon controlled rectifier Q1 and the anodes of the diode D1 are respectively two output ends (V1 and V2) of the rectifying circuit, the input end P of the rectifying circuit is also connected with the anode of the diode D2, the cathodes of the diode D2 are connected with the anodes of the silicon controlled rectifier Q2, the cathodes of the diode D2 are also connected with the resistor R2 and the control electrodes of the silicon controlled rectifier Q2 in sequence, the cathodes of the silicon controlled rectifier Q2 are also connected with the control electrodes of the silicon controlled rectifier Q1 in sequence, the control electrodes of the silicon controlled rectifier Q2 are also connected with the control electrodes of the silicon controlled rectifier Q1, the control electrodes of the cathodes of the silicon controlled rectifier Q2 are also connected with the control electrodes of the voltage stabilizing diode D3, the anodes of the diode D3 are also connected with the anodes of the silicon controlled rectifier Q2 in sequence, and the control electrodes of the silicon controlled rectifier Q2 are connected with the anodes of the diode D2 in sequence;
the anti-reverse control unit comprises an NPN (negative-positive-negative) diode T4, a field effect diode F, a diode D5, a diode D6, a diode D7, a diode D8, a diode D9, a voltage stabilizing diode D10, a resistor R7, a resistor R8 and a resistor R9, wherein a base electrode is provided with a control signal input, the positive electrode of the diode D5 is connected with an output end V1 of a rectifying circuit, the negative electrode of the diode D5 is sequentially connected with the resistor R8 and the drain electrode of the field effect diode F, the source electrode of the field effect diode F is sequentially connected with the primary side of an isolation trigger U, the resistor R7 and the collector electrode of the NPN diode T4, the emitter electrode of the NPN diode T4 is sequentially connected with an output end V2 of the rectifying circuit, the negative electrode of the diode D5 is also sequentially connected with the resistor R9 and the negative electrode of the voltage stabilizing diode D10, the negative electrode of the voltage stabilizing diode D10 is also connected with the grid electrode of the field effect diode F, the positive electrode of the diode D10 is connected with the positive electrode of the diode D8, the negative electrode of the diode D8 is connected with an output end V2 of the rectifying circuit, the positive electrode of the diode D9 is connected with the negative electrode of the rectifying circuit, and the positive electrode of the diode D6 is connected with the positive electrode of the diode D6, and the negative electrode of the diode D6 is connected with the positive electrode of the diode D6 is connected with the positive electrode of the diode D6.
Further, the number of the first anti-reverse rectifying units is three, the input ends P of the rectifying circuits of the three first anti-reverse rectifying units are respectively connected into three-phase electricity, the output ends (V1, V2) of the rectifying circuits of the three first anti-reverse rectifying units are connected in parallel, when three-phase rectification is carried out, the primary sides of the isolation triggers U of the three first anti-reverse rectifying units are sequentially connected in series, one ends of the isolation triggers U are connected with the source electrode of the field effect tube F of the anti-reverse control unit after the isolation triggers U are connected in series, and the other ends of the isolation triggers U are sequentially connected with the collector electrodes of the resistor R7 and the NPN tube T4.
The utility model provides a prevent silicon controlled rectifier rectification circuit of reverse connection, includes second anti-rectification unit, switch control unit and prevents reverse control unit, wherein:
the second anti-reverse rectifying unit comprises an NPN tube T1, a diode D2, a voltage stabilizing diode D3, a diode D4, a silicon controlled rectifier Q2, a resistor R0, a resistor R1, a resistor R2 and a rectifying circuit formed by the diode D1 and the silicon controlled rectifier Q1 with anodes connected with the cathodes of the diode D1, wherein the cathodes of the diode D1 are input ends P of the rectifying circuit, the cathodes of the silicon controlled rectifier Q1 and the anodes of the diode D1 are respectively two output ends (V1 and V2) of the rectifying circuit, the input end P of the rectifying circuit is also connected with the anodes of the diode D2, the cathodes of the diode D2 are connected with the anodes of the silicon controlled rectifier Q2, the cathodes of the silicon controlled rectifier Q2 are sequentially connected with the resistor R1 and the output end V1 of the rectifying circuit, the cathode of the silicon controlled rectifier Q2 is also connected with the control electrode of the silicon controlled rectifier Q1, the cathode of the diode D2 is also connected with the resistor R2 and the control electrode of the silicon controlled rectifier Q2 in sequence, the control electrode of the silicon controlled rectifier Q2 is also connected with the cathode of the voltage stabilizing diode D3, the anode of the voltage stabilizing diode D3 is connected with the output end V1 of the rectifying circuit, the output end V2 of the rectifying circuit is connected with the anode of the diode D4, the cathode of the diode D4 is connected with the anode of the silicon controlled rectifier Q2, the control electrode of the silicon controlled rectifier Q2 is also connected with the collector of the NPN tube T1, the emitter of the NPN tube T1 is connected with the output end V1 of the rectifying circuit, and the base of the NPN tube T1 is connected with one end of the resistor R0;
the switch control unit comprises an isolation trigger U, PNP tube T2, a PNP tube T3, a resistor R4, a resistor R5 and a resistor R6, wherein one end of the resistor R5 is connected with an emitter of the PNP tube T3, the other end of the resistor R5 is connected with a working voltage VDD, a collector of the PNP tube T3 is connected with one end of a base of the NPN tube T1 which is not connected with the resistor R0 in the second anti-reverse rectifying unit, a base of the PNP tube T3 is sequentially connected with the resistor R6 and an emitter of the PNP tube T2, a collector of the PNP tube T2 is sequentially connected with a rectifying circuit output end V1 of the second anti-reverse rectifying unit, a base of the PNP tube T2 is sequentially connected with the resistor R3, and the rectifying circuit output end V1 of the second anti-reverse rectifying unit, and the other end of the PNP tube T2 is connected with the working voltage VDD;
the anti-reverse control unit comprises an NPN (negative-positive-negative) diode T4, a field effect diode F, a diode D5, a diode D6, a diode D7, a diode D8, a diode D9, a voltage stabilizing diode D10, a resistor R7, a resistor R8 and a resistor R9, wherein a base electrode is provided with a control signal input, the positive electrode of the diode D5 is connected with an output end V1 of a rectifying circuit, the negative electrode of the diode D5 is sequentially connected with the resistor R8 and the drain electrode of the field effect diode F, the source electrode of the field effect diode F is sequentially connected with the primary side of an isolation trigger U, the resistor R7 and the collector electrode of the NPN diode T4, the emitter electrode of the NPN diode T4 is sequentially connected with an output end V2 of the rectifying circuit, the negative electrode of the diode D5 is also sequentially connected with the resistor R9 and the negative electrode of the voltage stabilizing diode D10, the negative electrode of the voltage stabilizing diode D10 is also connected with the grid electrode of the field effect diode F, the positive electrode of the diode D10 is connected with the positive electrode of the diode D8, the negative electrode of the diode D8 is connected with an output end V2 of the rectifying circuit, the positive electrode of the diode D9 is connected with the negative electrode of the rectifying circuit, and the positive electrode of the diode D6 is connected with the positive electrode of the diode D6, and the negative electrode of the diode D6 is connected with the positive electrode of the diode D6 is connected with the positive electrode of the diode D6.
Further, the number of the second anti-reverse rectifying units is three, the input ends P of the rectifying circuits of the three second anti-reverse rectifying units are respectively connected with three-phase electricity, the output ends (V1, V2) of the rectifying circuits of the three first anti-reverse rectifying units are connected in parallel, and when three-phase rectification is carried out, one ends, which are not connected with the base electrode of the NPN tube T1, of the three second anti-reverse rectifying units are connected with the collector electrode of the PNP tube T3 of the switch control unit.
Further, the isolation trigger U is any one of an isolation trigger or a transformer.
According to the reverse connection-preventing silicon controlled rectifier circuit, two output ends (V1 and V2) of the rectifier circuit are correctly connected with a storage battery, for example, the output end V1 of the rectifier circuit is connected with the positive electrode of the storage battery, the output end V2 of the rectifier circuit is connected with the negative electrode of the storage battery, when the primary side of an isolation trigger U is not electrified and is not conducted, a diode D2 is conducted, a voltage stabilizing diode D3 provides a stable high level for the control electrode of the silicon controlled rectifier Q2, the silicon controlled rectifier Q2 is conducted, the silicon controlled rectifier Q1 of the rectifier circuit is controlled to be extremely high level, and the rectifier circuit with an alternating current input at the input end P works normally; two output ends (V1, V2) of the rectifying circuit are reversely connected with the storage battery, if the output end V1 of the rectifying circuit is connected with the negative electrode of the storage battery, when the output end V2 of the rectifying circuit is connected with the positive electrode of the storage battery, the primary side of the isolation trigger U is electrified and conducted, the diode D4 and the diode D2 are conducted, the isolation trigger U is forward biased, the silicon controlled rectifier Q2 is controlled to be extremely low level, the silicon controlled rectifier Q2 is not conducted, the silicon controlled rectifier Q1 of the rectifying circuit is controlled to be extremely low level, the silicon controlled rectifier Q1 is always not conducted, and the rectifying circuit does not work, so that the damage to the rectifying circuit and the storage battery caused by reverse connection of the storage battery is effectively avoided.
Drawings
FIG. 1 is a block diagram of a first embodiment of an anti-reverse thyristor rectifier circuit of the invention;
FIG. 2 is a block diagram of a second embodiment of an anti-reverse thyristor rectifier circuit according to the present invention;
FIG. 3 is a block diagram of a third embodiment of an anti-reverse thyristor rectifier circuit according to the present invention;
fig. 4 is a block diagram of a fourth embodiment of the reverse connection preventing thyristor rectification circuit of the invention.
Detailed Description
The following describes in detail the embodiments of the anti-reverse scr rectifying circuit according to the present invention with reference to the accompanying drawings:
fig. 1 shows a first embodiment of the reverse connection preventing thyristor rectification circuit of the invention. As shown in fig. 1, a reverse connection preventing scr rectifying circuit includes a first reverse connection preventing rectifying unit 100 and a reverse connection preventing control unit 400, wherein:
the first anti-reverse rectifying unit 100 comprises an isolation trigger U, a diode D2, a voltage stabilizing diode D3, a diode D4, a silicon controlled rectifier Q2, a resistor R1, a resistor R2 and a rectifying circuit 1 formed by the diode D1 and a silicon controlled rectifier Q1 with anodes connected with cathodes of the diode D1, wherein the cathodes of the diode D1 are input ends P of the rectifying circuit 1, anodes of the silicon controlled rectifier Q1 and anodes of the diode D1 are respectively two output ends (V1 and V2) of the rectifying circuit 1, the input end P of the rectifying circuit 1 is also connected with anodes of the diode D2, cathodes of the diode D2 are also connected with anodes of the silicon controlled rectifier Q2, cathodes of the diode D2 are also connected with the resistor R2, an output end V1 of the rectifying circuit 1 is connected with anodes of the diode D2 in sequence, cathodes of the silicon controlled rectifier Q2 are also connected with the resistors R1, an output end V1 of the rectifying circuit 1 is connected with anodes of the diode D1 in sequence, and the anodes of the diode D2 are also connected with anodes of the diode D1 is connected with anodes of the diode D1 in sequence;
the anti-reverse control unit 400 comprises an NPN (negative-positive-negative) diode T4, a field effect diode F, a diode D5, a diode D6, a diode D7, a diode D8, a diode D9, a voltage-stabilizing diode D10, a resistor R7, a resistor R8 and a resistor R9, wherein the base electrode of the NPN diode T4 is provided with a control signal input, the positive electrode of the diode D5 is connected with an output end V1 of the rectifying circuit 1, the negative electrode of the diode D5 is sequentially connected with the resistor R8 and the drain electrode of the field effect diode F, the source electrode of the field effect diode F is sequentially connected with the primary side of the isolation trigger U, the resistor R7 and the collector electrode of the NPN diode T4, the emitter electrode of the NPN diode T4 is sequentially connected with an output end V2 of the rectifying circuit 1, the negative electrode of the diode D5 is also sequentially connected with the resistor R9 and the negative electrode of the voltage-stabilizing diode D10, the positive electrode of the voltage-stabilizing diode D10 is also connected with the gate electrode of the field effect diode F, the negative electrode of the diode D8 is connected with the positive electrode of the rectifying circuit 1, the negative electrode of the diode D9 is connected with the positive electrode of the rectifying circuit 1, and the negative electrode of the positive electrode of the diode D6 is connected with the positive electrode of the diode D6 of the voltage-stabilizing diode D6 is connected with the positive electrode of the rectifying circuit 1; the isolation trigger U is a photoelectric coupler.
In the first embodiment of the anti-reverse-connection silicon controlled rectifier circuit of the invention, two output ends (V1, V2) of the rectifier circuit 1 are correctly connected with a storage battery, for example, the output end V1 of the rectifier circuit 1 is connected with the positive electrode of the storage battery, when the output end V2 of the rectifier circuit 1 is connected with the negative electrode of the storage battery, in the anti-reverse control unit 400, the diode D5 and the diode D8 are conducted, current flows through the positive electrode of the storage battery connected with the output end V1 of the rectifier circuit 1, the diode D5, the resistor R9, the zener diode D10 and the diode D8 and then flows to the negative electrode of the storage battery connected with the output end V2 of the rectifier circuit 1, the series zener diode D10 and the diode D8 provide a stable reference voltage for the grid electrode of the field effect tube F, the field effect tube F is conducted, the positive electrode of the storage battery connected with the output end V1 of the rectifier circuit 1, the diode D5, the resistor R8, the field effect tube F, the primary side of the isolation trigger U of the first anti-reverse rectifier unit 100, the resistor R7, the NPN tube T4 and the negative electrode of the storage battery connected with the output end V2 of the rectifier circuit 1 form a series connection circuit, and whether the series connection of the trigger circuit is formed is conducted is determined, or not, and whether the series connection of the trigger circuit exists is formed, or not is determined, and whether the trigger circuit is conducted is formed, or not.
In the first implementation mode of the reverse connection preventing silicon controlled rectifier circuit, under the condition that two output ends (V1, V2) of a rectifier circuit 1 are correctly connected with a storage battery, when a control signal input by a base electrode of an NPN tube T4 of a reverse connection preventing control unit 400 is low, the NPN tube T4 is not conducted, a storage battery positive electrode, a diode D5, a resistor R8, a field effect tube F and an isolation trigger U primary side of a first reverse connection preventing rectifier unit 100, a resistor R7, the NPN tube T4 and a storage battery negative electrode connected with an output end V2 of the rectifier circuit 1 form a series circuit, the isolation trigger U secondary side of the first reverse connection preventing rectifier unit 100 is not conducted, a diode D2 in the first reverse connection preventing rectifier unit 100 is conducted, an electric signal path is formed by the input end P of the rectifier circuit 1, the diode D2, the resistor R2, the diode D3 and the output end V1 of the rectifier circuit 1, the voltage stabilizing diode D3 provides a stable high-level control electrode for a controllable silicon Q2 control electrode, the voltage stabilizing diode Q2 is conducted, the controllable silicon controlled rectifier circuit 1 is connected with the input end P of the rectifier circuit 1, and the input end of the rectifier circuit 1 is normally conducted; when the control signal input by the base electrode of the NPN tube T4 of the anti-reverse control unit 400 is at a high level, the NPN tube T4 is turned on, the positive electrode of the storage battery, the diode D5, the resistor R8, the field effect tube F, the primary side of the isolation trigger U of the first anti-reverse rectifying unit 100, the resistor R7, the NPN tube T4, and the serial circuit formed by the negative electrode of the storage battery connected to the output end V2 of the rectifying unit 1 have current passing through, the secondary side of the isolation trigger U in the first anti-reverse rectifying unit 100 is forward biased and turned on, the diode D2 in the first anti-reverse rectifying unit 100 is turned on, the input end P of the rectifying circuit 1, the diode D2, the resistor R2, the secondary side of the isolation trigger U, and the output end V1 of the rectifying circuit 1 form an electrical signal path, the voltage stabilizing diode D3 is short-circuited to provide a stable high level for the control electrode of the silicon controlled Q2, the silicon controlled Q1 is not turned on, the silicon controlled Q1 is extremely low level, the rectifying circuit 1 is not turned on, and the rectifying circuit 1 is not operated. In this way, when the two output ends (V1, V2) of the rectifying circuit 1 are correctly connected to the storage battery, the control signal input by the base electrode of the NPN tube T4 in the anti-reverse control unit 400 can control whether the rectifying circuit 1 is working normally.
In the first embodiment of the anti-reverse-connection silicon controlled rectifier circuit of the invention, two output ends (V1, V2) of the rectifier circuit 1 are reversely connected with a storage battery, for example, the output end V1 of the rectifier circuit 1 is connected with the cathode of the storage battery, when the output end V2 of the rectifier circuit 1 is connected with the anode of the storage battery, in the anti-reverse control unit 400, a diode D9 and a diode D7 are conducted, current flows through the anode of the storage battery, the diode D9, a resistor R9, a voltage stabilizing diode D10 and the diode D7 which are connected with the output end V2 of the rectifier circuit 1 and then flows to the cathode of the storage battery which is connected with the output end V1 of the rectifier circuit 1, the voltage stabilizing diode D10 and the diode D7 which are connected in series provide a stable reference voltage for the grid electrode of the field effect tube F, the field effect tube F is conducted, the positive electrode of the storage battery, the diode D9, the resistor R8, the field effect tube F, the primary side of the isolation trigger U of the first anti-reverse rectifying unit 100, the resistor R7, the diode D6 and the negative electrode of the storage battery, which is connected with the output end V1 of the rectifying circuit 1, form a serial circuit with current, the primary side of the isolation trigger U in the first anti-reverse rectifying unit 100 is powered on, the secondary side of the isolation trigger U is conducted, the diode D4 in the first anti-reverse rectifying unit 100 is conducted, the positive electrode of the storage battery, the diode D4, the resistor R2 and the secondary side of the isolation trigger U, which are connected with the output end V1 of the rectifying circuit 1, form an electric signal path, the control electrode of the silicon controlled Q2 is directly connected with the negative electrode of the storage battery, which is connected with the output end V1 of the rectifying circuit 1, the silicon controlled Q2 is controlled to be extremely low level, the silicon controlled Q1 of the rectifying circuit 1 is controlled extremely low level, the silicon controlled Q1 is always non-conductive, the rectifying circuit 1 does not operate.
Fig. 2 shows a second embodiment of the reverse connection preventing scr rectifying circuit of the present invention. In the second embodiment of the present invention, the number of the first anti-reverse rectifying units 100 is three, the input ends P of the rectifying circuits 1 of the three first anti-reverse rectifying units 100 are respectively connected to three-phase power, the output ends (V1, V2) of the rectifying circuits 1 of the three first anti-reverse rectifying units 100 are connected in parallel, so that when three-phase rectification is performed, the primary sides of the isolation triggers U of the three first anti-reverse rectifying units 100 are sequentially connected in series, one ends of the three primary sides are connected with the source electrode of the field effect transistor F of the anti-reverse control unit 400 after the three primary sides are connected in series, and the other ends of the three primary sides are sequentially connected with the collector electrode of the resistor R7 and the NPN transistor T4. The rest of the structure is the same as that of the first embodiment.
In the second embodiment of the reverse connection preventing scr rectifying circuit of the present invention, the primary sides of the isolation flip-flops U of the three first reverse connection preventing rectifying units 100 are connected in series, and their operating states are the same at any time. The two output ends (V1, V2) of the rectifying circuit 1 are correctly connected with a storage battery, if the output end V1 of the rectifying circuit 1 is connected with the positive electrode of the storage battery, the three isolation triggers U are conducted or not and are determined by a control signal input by the base electrode of the NPN tube T4, the control signal input by the base electrode of the NPN tube T4 is low level, the three isolation triggers U are not conducted, and the rectifying circuit 1 of the three first anti-reverse rectifying units 100 work; the control signal input by the base electrode of the NPN tube T4 is in a high level, the three isolation triggers U are all conducted, and the rectifying circuits 1 of the three first anti-reverse rectifying units 100 do not work. Two output ends (V1, V2) of the rectifying circuit 1 are reversely connected with the storage battery, for example, the output end V1 of the rectifying circuit 1 is connected with the negative electrode of the storage battery, when the output end V2 of the rectifying circuit 1 is connected with the positive electrode of the storage battery, the primary sides of the isolation triggers U in the three first anti-reverse rectifying units 100 are all electrified, the secondary sides of the three isolation triggers U are conducted, and the rectifying circuit 1 does not work. Thus, three-phase rectification is realized.
In the first embodiment and the second embodiment of the reverse connection preventing thyristor rectifying circuit, the resistor R1, the resistor R2, the resistor R7, the resistor R8 and the resistor R9 are all used as load resistors and are used in each circuit to avoid short circuit when each circuit has an electric signal.
Fig. 3 shows a third embodiment of the anti-reverse thyristor rectification circuit of the invention. As shown in fig. 3, a reverse connection preventing thyristor rectification circuit includes a second reverse connection preventing rectification unit 200, a switch control unit 300, and a reverse connection preventing control unit 400, wherein:
the second anti-reverse rectifying unit 200 comprises an NPN tube T1, a diode D2, a voltage stabilizing diode D3, a diode D4, a silicon controlled rectifier Q2, a resistor R0, a resistor R1, a resistor R2 and a rectifying circuit 1 formed by the diode D1 and the silicon controlled rectifier Q1 with anodes connected with the cathode of the diode D1, wherein the cathode of the diode D1 is an input end P of the rectifying circuit 1, the cathode of the silicon controlled rectifier Q1 and the anode of the diode D1 are respectively two output ends (V1 and V2) of the rectifying circuit 1, the input end P of the rectifying circuit 1 is also connected with the anode of the diode D2, the cathode of the diode D2 is connected with the anode of the silicon controlled rectifier Q2, the cathode of the silicon controlled rectifier Q2 is also connected with the control electrode of the silicon controlled rectifier Q1, the cathode of the diode D2 is also connected with the control electrode of the resistor R1, the cathode of the silicon controlled rectifier Q2 is also connected with the control electrode of the silicon controlled rectifier Q1, the anode of the diode D1 is also connected with the control electrode of the anode of the silicon controlled rectifier Q1, the anode of the diode D1 is also connected with the anode of the voltage stabilizing diode D1, the anode of the silicon controlled rectifier Q1 is connected with the control electrode of the silicon controlled rectifier Q1;
the switch control unit 300 comprises an isolation trigger U, PNP tube T2, a PNP tube T3, a resistor R4, a resistor R5 and a resistor R6, wherein one end of the resistor R5 is connected with an emitter of the PNP tube T3, the other end of the resistor R5 is connected with a working voltage VDD, a collector of the PNP tube T3 is connected with one end of a base of the NPN tube T1 which is not connected with the resistor R0 in the second anti-reverse rectifying unit 200, a base of the PNP tube T3 is sequentially connected with the resistor R6 and an emitter of the PNP tube T2, a collector of the PNP tube T2 is sequentially connected with an output end V1 of the rectifying circuit 1 of the second anti-reverse rectifying unit 200, a base of the PNP tube T2 is sequentially connected with the resistor R3 and an output end V1 of the rectifying circuit 1 of the second anti-reverse rectifying unit 200, and the other end of the resistor R4 is connected with the working voltage VDD;
the anti-reverse control unit 400 comprises an NPN (negative-positive-negative) diode T4, a field effect diode F, a diode D5, a diode D6, a diode D7, a diode D8, a diode D9, a voltage-stabilizing diode D10, a resistor R7, a resistor R8 and a resistor R9, wherein the base electrode of the NPN diode T4 is provided with a control signal input, the positive electrode of the diode D5 is connected with an output end V1 of the rectifying circuit 1, the negative electrode of the diode D5 is sequentially connected with the resistor R8 and the drain electrode of the field effect diode F, the source electrode of the field effect diode F is sequentially connected with the primary side of the isolation trigger U, the resistor R7 and the collector electrode of the NPN diode T4, the emitter electrode of the NPN diode T4 is sequentially connected with an output end V2 of the rectifying circuit 1, the negative electrode of the diode D5 is also sequentially connected with the resistor R9 and the negative electrode of the voltage-stabilizing diode D10, the positive electrode of the voltage-stabilizing diode D10 is also connected with the gate electrode of the field effect diode F, the negative electrode of the diode D8 is connected with the positive electrode of the rectifying circuit 1, the negative electrode of the diode D9 is connected with the positive electrode of the rectifying circuit 1, and the negative electrode of the positive electrode of the diode D6 is connected with the positive electrode of the diode D6 of the voltage-stabilizing diode D6 is connected with the positive electrode of the rectifying circuit 1;
the isolation trigger U is a photoelectric coupler.
In the third embodiment of the anti-reverse-connection scr rectifying circuit of the present invention, the two output ends (V1, V2) of the rectifying circuit 1 are correctly connected to the storage battery, for example, when the output end V1 of the rectifying circuit 1 is connected to the positive electrode of the storage battery and the output end V2 of the rectifying circuit 1 is connected to the negative electrode of the storage battery, as described in the first embodiment, whether the isolation trigger U is turned on is determined by the control signal input from the base electrode of the NPN tube T4.
In the third embodiment of the reverse connection preventing thyristor rectifying circuit of the invention, when the control signal input by the base electrode of the NPN tube T4 of the reverse connection preventing control unit 400 is at a low level under the condition that two output ends (V1, V2) of the rectifying circuit 1 are correctly connected with a storage battery, the NPN tube T4 is not conducted, a primary side of a storage battery positive electrode, a diode D5, a resistor R8, a field effect tube F and an isolation trigger U of the first reverse connection preventing rectifying unit 100 which are connected with the output end V1 of the rectifying circuit 1, a series circuit formed by the resistor R7, the NPN tube T4 and a negative electrode of the storage battery connected with the output end V2 of the rectifying circuit 1 is not conducted, a secondary side of the isolation trigger U in the switch control unit 300 is not conducted, the PNP transistor T2 and the PNP transistor T3 in the switch control unit 300 are not turned on, so that the NPN transistor T1 in the second anti-reverse rectifying unit 200 is not turned on, the diode D2 in the second anti-reverse rectifying unit 100 is turned on, the input end P of the rectifying circuit 1, the diode D2, the resistor R2, the zener diode D3 and the output end V1 of the rectifying circuit 1 form an electrical signal path, the zener diode D3 provides a stable high level for the control electrode of the thyristor Q2, the thyristor Q2 is turned on, the control electrode of the thyristor Q1 of the rectifying circuit 1 is connected with the input end P of the rectifying circuit 1, the thyristor Q1 of the rectifying circuit 1 is controlled to be extremely high level, and the rectifying circuit 1 with an ac input at the input end P works normally; when the control signal input by the base electrode of the NPN tube T4 of the anti-reverse control unit 400 is at a high level, the NPN tube T4 is conducted, the positive electrode of the storage battery, the diode D5, the resistor R8, the field effect tube F and the primary side of the isolation trigger U of the first anti-reverse rectification unit 100, the resistor R7, the NPN tube T4 and the secondary side of the isolation trigger U in the switch control unit 300 are conducted, the resistor R3 and the resistor R4 in the switch control unit 300 are divided to provide bias voltage for the PNP tube T2, the PNP transistor T2 is turned on, and the PNP transistor T3 is turned on, so that the NPN transistor T1 in the second anti-reverse rectifying unit 200 is turned on, the diode D2 in the first anti-reverse rectifying unit 100 is turned on, the input terminal P of the rectifying circuit 1, the diode D2, the resistor R2, the NPN transistor T1, and the output terminal V1 of the rectifying circuit 1 form an electrical signal path, the zener diode D3 is shorted and cannot provide a stable high level for the gate of the thyristor Q2, the thyristor Q2 is not turned on, the thyristor Q1 of the rectifying circuit 1 is controlled to be extremely low level, the thyristor Q1 is not turned on, and the rectifying circuit 1 does not work. In this way, when the two output ends (V1, V2) of the rectifying circuit 1 are correctly connected to the storage battery, the control signal input by the base electrode of the NPN tube T4 in the anti-reverse control unit 400 can control whether the rectifying circuit 1 is working normally.
In the third embodiment of the anti-reverse-connection scr rectifying circuit of the present invention, two output ends (V1, V2) of the rectifying circuit 1 are reversely connected to the storage battery, for example, when the output end V1 of the rectifying circuit 1 is connected to the negative electrode of the storage battery and the output end V2 of the rectifying circuit 1 is connected to the positive electrode of the storage battery, as described in the first embodiment, the isolation trigger U is turned on, the resistor R3 and the resistor R4 in the switch control unit 300 divide the voltage to provide the bias voltage for the PNP transistor T2, the PNP transistor T2 is turned on, the PNP transistor T3 is turned on, so that the NPN transistor T1 in the second anti-reverse rectifying unit 200 is turned on, the diode D4 in the second anti-reverse rectifying unit 200 is turned on, the positive electrode of the storage battery, the diode D4, the resistor R2, the NPN transistor T1 and the negative electrode of the storage battery connected to the output end V1 of the rectifying circuit 1 form an electrical signal path, the control electrode of the thyristor Q2 is directly connected to the negative electrode connected to the output end V1 of the rectifying circuit 1, the thyristor Q2 controls the low level of the storage battery, the thyristor Q2 is turned off, and the thyristor 1 is turned off.
Fig. 4 shows a fourth embodiment of the reverse connection preventing scr rectifying circuit of the present invention. In the fourth embodiment of the present invention, the number of the second anti-reverse rectifying units 200 is three, the input terminals P of the rectifying circuits 1 of the three second anti-reverse rectifying units 200 are respectively connected to three phases of power, and the output terminals (V1, V2) of the rectifying circuits 1 of the three first anti-reverse rectifying units 100 are connected in parallel, so that when three phases of power are rectified, one ends of the resistors R0 of the three second anti-reverse rectifying units 200, which are not connected to the base electrode of the NPN tube T1, are all connected to the collector electrode of the PNP tube T3 of the switch control unit 300. The rest of the structure is the same as the third embodiment.
In the fourth embodiment of the reverse connection preventing scr rectifying circuit of the present invention, one end of the resistor R0 in the three second reverse connection preventing rectifying units 200, which is not connected to the base electrode of the NPN tube T1, is connected to the collector electrode of the PNP tube T3 of the switch control unit 300, and the operating states of the NPN tubes T1 in the three second reverse connection preventing rectifying units 200 are the same at any time. Two output ends (V1, V2) of the rectifying circuit 1 are correctly connected with a storage battery, if the output end V1 of the rectifying circuit 1 is connected with the positive electrode of the storage battery, when the output end V2 of the rectifying circuit 1 is connected with the negative electrode of the storage battery, a control signal input by a base electrode of an NPN tube T4 is in a low level, an isolation trigger U is not conducted, NPN tubes T1 in three first anti-reverse rectifying units 200 are not conducted, and the rectifying circuit 1 works; the control signal input by the base electrode of the NPN tube T4 is in a high level, the isolation trigger U is conducted, NPN tubes T1 in the three first anti-reverse rectifying units 200 are all conducted, and the rectifying circuit 1 does not work. Two output ends (V1, V2) of the rectifying circuit 1 are reversely connected with the storage battery, for example, the output end V1 of the rectifying circuit 1 is connected with the negative electrode of the storage battery, when the output end V2 of the rectifying circuit 1 is connected with the positive electrode of the storage battery, the isolation trigger U in the switch control unit 300 is conducted, NPN tubes T1 in the three first anti-reverse rectifying units 200 are all conducted, and the rectifying circuit 1 does not work. Thus, three-phase rectification is realized.
In the third and fourth embodiments of the reverse connection preventing thyristor rectifying circuit, the resistor R1, the resistor R2, the resistor R5, the resistor R7, the resistor R8 and the resistor R9 are all used as load resistors and used in each circuit to avoid short circuit when each circuit has an electric signal; the resistor R0 is used as a bias resistor of the NPN tube T1, the resistor R3 and the resistor R4 are used as bias resistors of the PNP tube T2, and the resistor R6 is used as a bias resistor of the PNP tube T3.
According to the reverse connection-preventing silicon controlled rectifier circuit, two output ends (V1 and V2) of a rectifier circuit 1 are correctly connected with a storage battery, for example, the output end V1 of the rectifier circuit 1 is connected with the positive electrode of the storage battery, the output end V2 of the rectifier circuit 1 is connected with the negative electrode of the storage battery, when the primary side of an isolation trigger U is not electrified and is not conducted, a diode D2 is conducted, a voltage stabilizing diode D3 provides a stable high level for a control electrode of the silicon controlled rectifier Q2, the silicon controlled rectifier Q2 is conducted, the silicon controlled rectifier Q1 of the rectifier circuit 1 is controlled to be extremely high level, and the rectifier circuit 1 with an alternating current input at the input end P works normally; two output ends (V1, V2) of the rectifying circuit 1 are reversely connected with the storage battery, for example, the output end V1 of the rectifying circuit 1 is connected with the negative electrode of the storage battery, when the output end V2 of the rectifying circuit 1 is connected with the positive electrode of the storage battery, the primary side of the isolation trigger U is electrified and conducted, the diodes D4 and D2 are conducted, the isolation trigger U is forward biased, the silicon controlled rectifier Q2 is controlled to be extremely low level, the silicon controlled rectifier Q2 is not conducted, the silicon controlled rectifier Q1 of the rectifying circuit 1 is controlled to be extremely low level, the silicon controlled rectifier Q1 is always not conducted, and the rectifying circuit 1 does not work, so that the damage to the rectifying circuit 1 and the storage battery caused by reverse connection of the storage battery is effectively avoided.
The invention relates to a reverse connection-preventing silicon controlled rectifier circuit, and an isolation trigger U can also be a transformer.
When the isolation trigger U is a photoelectric coupler, the primary side of the isolation trigger U is the light emitting source side of the photoelectric coupler, such as a light emitting diode, and the secondary side of the isolation trigger U is the light receiving device side of the photoelectric coupler, such as a photodiode or a phototriode.
The invention relates to a reverse connection-preventing silicon controlled rectifier circuit, wherein a filter circuit consisting of a resistor R10 and a capacitor C1 can be arranged between an input end P and an output end V1 of a rectifier circuit 1.
The invention relates to a reverse connection-preventing silicon controlled rectifier circuit, wherein a rectifying circuit 1 is in the prior art, and the rectifying principle is not described here.
Claims (5)
1. The utility model provides a prevent silicon controlled rectifier circuit of reverse connection which characterized in that: including first anti-reverse rectification unit and anti-reverse control unit, wherein:
the first anti-reverse rectifying unit comprises an isolation trigger U, a diode D2, a voltage stabilizing diode D3, a diode D4, a silicon controlled rectifier Q2, a resistor R1, a resistor R2 and a rectifying circuit formed by the diode D1 and a silicon controlled rectifier Q1 with anodes connected with the cathodes of the diode D1, wherein the cathodes of the diode D1 are input ends P of the rectifying circuit, the cathodes of the silicon controlled rectifier Q1 and the anodes of the diode D1 are respectively two output ends (V1 and V2) of the rectifying circuit, the input end P of the rectifying circuit is also connected with the anode of the diode D2, the cathodes of the diode D2 are connected with the anodes of the silicon controlled rectifier Q2, the cathodes of the diode D2 are also connected with the resistor R2 and the control electrodes of the silicon controlled rectifier Q2 in sequence, the cathodes of the silicon controlled rectifier Q2 are also connected with the control electrodes of the silicon controlled rectifier Q1 in sequence, the control electrodes of the silicon controlled rectifier Q2 are also connected with the control electrodes of the silicon controlled rectifier Q1, the control electrodes of the cathodes of the silicon controlled rectifier Q2 are also connected with the control electrodes of the voltage stabilizing diode D3, the anodes of the diode D3 are also connected with the anodes of the silicon controlled rectifier Q2 in sequence, and the control electrodes of the silicon controlled rectifier Q2 are connected with the anodes of the diode D2 in sequence;
the anti-reverse control unit comprises an NPN (negative-positive-negative) diode T4, a field effect diode F, a diode D5, a diode D6, a diode D7, a diode D8, a diode D9, a voltage stabilizing diode D10, a resistor R7, a resistor R8 and a resistor R9, wherein a base electrode is provided with a control signal input, the positive electrode of the diode D5 is connected with an output end V1 of a rectifying circuit, the negative electrode of the diode D5 is sequentially connected with the resistor R8 and the drain electrode of the field effect diode F, the source electrode of the field effect diode F is sequentially connected with the primary side of an isolation trigger U, the resistor R7 and the collector electrode of the NPN diode T4, the emitter electrode of the NPN diode T4 is sequentially connected with an output end V2 of the rectifying circuit, the negative electrode of the diode D5 is also sequentially connected with the resistor R9 and the negative electrode of the voltage stabilizing diode D10, the negative electrode of the voltage stabilizing diode D10 is also connected with the grid electrode of the field effect diode F, the positive electrode of the diode D10 is connected with the positive electrode of the diode D8, the negative electrode of the diode D8 is connected with an output end V2 of the rectifying circuit, the positive electrode of the diode D9 is connected with the negative electrode of the rectifying circuit, and the positive electrode of the diode D6 is connected with the positive electrode of the diode D6, and the negative electrode of the diode D6 is connected with the positive electrode of the diode D6 is connected with the positive electrode of the diode D6.
2. The reverse connection preventing thyristor rectifier circuit according to claim 1, wherein: the number of the first anti-reverse rectifying units is three, the input ends P of the rectifying circuits of the three first anti-reverse rectifying units are respectively connected with three-phase power, the output ends (V1, V2) of the rectifying circuits of the three first anti-reverse rectifying units are connected in parallel, when three-phase rectification is carried out, the primary sides of the isolation triggers U of the three first anti-reverse rectifying units are sequentially connected in series, one ends of the isolation triggers U are connected with the source electrode of the field effect tube F of the anti-reverse control unit after the isolation triggers U are connected in series, and the other ends of the isolation triggers U are sequentially connected with the collector electrodes of the resistor R7 and the NPN tube T4.
3. The utility model provides a prevent silicon controlled rectifier rectification circuit of reverse connection, includes second anti-rectification unit, switch control unit and prevents reverse control unit, wherein:
the second anti-reverse rectifying unit comprises an NPN tube T1, a diode D2, a voltage stabilizing diode D3, a diode D4, a silicon controlled rectifier Q2, a resistor R0, a resistor R1, a resistor R2 and a rectifying circuit formed by the diode D1 and the silicon controlled rectifier Q1 with anodes connected with the cathodes of the diode D1, wherein the cathodes of the diode D1 are input ends P of the rectifying circuit, the cathodes of the silicon controlled rectifier Q1 and the anodes of the diode D1 are respectively two output ends (V1 and V2) of the rectifying circuit, the input end P of the rectifying circuit is also connected with the anodes of the diode D2, the cathodes of the diode D2 are connected with the anodes of the silicon controlled rectifier Q2, the cathodes of the silicon controlled rectifier Q2 are sequentially connected with the resistor R1 and the output end V1 of the rectifying circuit, the cathode of the silicon controlled rectifier Q2 is also connected with the control electrode of the silicon controlled rectifier Q1, the cathode of the diode D2 is also connected with the resistor R2 and the control electrode of the silicon controlled rectifier Q2 in sequence, the control electrode of the silicon controlled rectifier Q2 is also connected with the cathode of the voltage stabilizing diode D3, the anode of the voltage stabilizing diode D3 is connected with the output end V1 of the rectifying circuit, the output end V2 of the rectifying circuit is connected with the anode of the diode D4, the cathode of the diode D4 is connected with the anode of the silicon controlled rectifier Q2, the control electrode of the silicon controlled rectifier Q2 is also connected with the collector of the NPN tube T1, the emitter of the NPN tube T1 is connected with the output end V1 of the rectifying circuit, and the base of the NPN tube T1 is connected with one end of the resistor R0;
the switch control unit comprises an isolation trigger U, PNP tube T2, a PNP tube T3, a resistor R4, a resistor R5 and a resistor R6, wherein one end of the resistor R5 is connected with an emitter of the PNP tube T3, the other end of the resistor R5 is connected with a working voltage VDD, a collector of the PNP tube T3 is connected with one end of a base of the NPN tube T1 which is not connected with the resistor R0 in the second anti-reverse rectifying unit, a base of the PNP tube T3 is sequentially connected with the resistor R6 and an emitter of the PNP tube T2, a collector of the PNP tube T2 is sequentially connected with a rectifying circuit output end V1 of the second anti-reverse rectifying unit, a base of the PNP tube T2 is sequentially connected with the resistor R3, and the rectifying circuit output end V1 of the second anti-reverse rectifying unit, and the other end of the PNP tube T2 is connected with the working voltage VDD;
the anti-reverse control unit comprises an NPN (negative-positive-negative) diode T4, a field effect diode F, a diode D5, a diode D6, a diode D7, a diode D8, a diode D9, a voltage stabilizing diode D10, a resistor R7, a resistor R8 and a resistor R9, wherein a base electrode is provided with a control signal input, the positive electrode of the diode D5 is connected with an output end V1 of a rectifying circuit, the negative electrode of the diode D5 is sequentially connected with the resistor R8 and the drain electrode of the field effect diode F, the source electrode of the field effect diode F is sequentially connected with the primary side of an isolation trigger U, the resistor R7 and the collector electrode of the NPN diode T4, the emitter electrode of the NPN diode T4 is sequentially connected with an output end V2 of the rectifying circuit, the negative electrode of the diode D5 is also sequentially connected with the resistor R9 and the negative electrode of the voltage stabilizing diode D10, the negative electrode of the voltage stabilizing diode D10 is also connected with the grid electrode of the field effect diode F, the positive electrode of the diode D10 is connected with the positive electrode of the diode D8, the negative electrode of the diode D8 is connected with an output end V2 of the rectifying circuit, the positive electrode of the diode D9 is connected with the negative electrode of the rectifying circuit, and the positive electrode of the diode D6 is connected with the positive electrode of the diode D6, and the negative electrode of the diode D6 is connected with the positive electrode of the diode D6 is connected with the positive electrode of the diode D6.
4. The reverse connection preventing thyristor rectifier circuit according to claim 3, wherein: the number of the second anti-reverse rectifying units is three, the input ends P of the rectifying circuits of the three second anti-reverse rectifying units are respectively connected with three-phase electricity, the output ends (V1, V2) of the rectifying circuits of the three first anti-reverse rectifying units are connected in parallel, and when three-phase rectification is carried out, one ends, which are not connected with the base electrode of the NPN tube T1, of the resistor R0 in the three second anti-reverse rectifying units are all connected with the collector electrode of the PNP tube T3 of the switch control unit.
5. A reverse connection preventing thyristor rectification circuit according to claim 1 or claim 3, wherein: the isolation trigger U is either an isolation trigger or a transformer.
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Address after: No. 17, Industrial Park, Xitan Town, Fu'an City, Ningde City, Fujian Province, 355008 Applicant after: Werner Collector Electronics Technology (Fujian) Co.,Ltd. Address before: No. 85 Budaoshan, Yanta Village, Chengyang Town, Fu'an City, Ningde City, Fujian Province, 355000 Applicant before: WERNER(FUJIAN) POWER Co.,Ltd. |
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