CN110224068B - Optical detection structure based on perovskite nanowire - Google Patents
Optical detection structure based on perovskite nanowire Download PDFInfo
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- CN110224068B CN110224068B CN201910591552.7A CN201910591552A CN110224068B CN 110224068 B CN110224068 B CN 110224068B CN 201910591552 A CN201910591552 A CN 201910591552A CN 110224068 B CN110224068 B CN 110224068B
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- 239000002070 nanowire Substances 0.000 title claims abstract description 80
- 238000001514 detection method Methods 0.000 title claims abstract description 31
- 230000003287 optical effect Effects 0.000 title abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 15
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims description 15
- 230000005672 electromagnetic field Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 230000031700 light absorption Effects 0.000 abstract 1
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 101700004678 SLIT3 Proteins 0.000 description 1
- 102100027339 Slit homolog 3 protein Human genes 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H10K30/87—Light-trapping means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention relates to the technical field of optical detection structures, in particular to an optical detection structure based on perovskite nanowires. The silicon dioxide layer is arranged on the silicon substrate layer, the perovskite nanowire with the gaps is arranged on the silicon dioxide layer, and the electrodes are loaded at two ends of the perovskite nanowire with the gaps. The perovskite nanowire with the slits enhances absorption of light and reduces the area of a current cross section, thereby improving detection sensitivity.
Description
Technical Field
The invention belongs to the technical field of optical detection structures, and particularly relates to an optical detection structure based on perovskite nanowires.
Background
The perovskite material is a direct-strip-gap material, has a wide absorption spectrum from visible light to near-infrared waveguide, and lays a foundation for high photoelectric conversion efficiency. Although perovskite single crystal crystals have extremely low defect state density and great application potential in the aspect of realizing weak light detection, the sensitivity of weak light detection is still low.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a light detection structure based on perovskite nanowires. The technical problem to be solved by the invention is realized by the following technical scheme:
a perovskite nanowire-based photodetection structure comprising: the electrode, perovskite nanowire, silicon dioxide layer, silicon substrate layer, the silicon dioxide layer is put on silicon substrate layer, the perovskite nanowire is put on silicon dioxide layer; two ends of the perovskite nanowire are respectively connected with an electrode, and the perovskite nanowire is provided with a gap.
Further, the slit is in a strip shape along the length direction of the perovskite nanowire.
Further, the stripes have a saw-tooth shaped boundary.
Further, the slits are formed by holes arranged along the length direction of the nanowires.
Further, the slit is prepared by an ion beam etching method.
Furthermore, a metal film is arranged between the silicon substrate layer and the silicon dioxide layer.
Furthermore, the metal film is formed by at least two strip-shaped structures which are arranged in parallel.
Further, the arrangement direction of the strip-shaped structures is perpendicular to the perovskite nano-wires
Compared with the prior art, the invention has the beneficial effects that:
1. according to the perovskite nanowire-based optical detection structure, the gaps are formed in the perovskite nanowire, coupling between the perovskite nanowire and incident light is increased, generation, separation and extraction of photon-generated carriers are greatly improved, and carrier concentration in a unit area is increased.
2. According to the perovskite nanowire-based optical detection structure, the metal layer is arranged below the perovskite nanowire, strong coupling is formed between the metal layer and the perovskite nanowire, a strong local electric field is generated, energy is gathered between the perovskite nanowire and the metal film, the optical signal is converted into an electric signal easy to detect by the perovskite nanowire-based optical detection structure, the excited electric field is high in localization degree and beneficial to detection, and the optical detection structure based on the perovskite nanowire is converted into an electric signal easy to detect, so that the detection sensitivity of the optical detection structure is improved.
3. In the invention, after the gap is arranged on the perovskite nanowire, the effective sectional area of the conduction current in the perovskite nanowire is reduced, and the current intensity passing through the unit sectional area is increased, thereby improving the detection sensitivity.
Drawings
Fig. 1 is a schematic diagram of the perovskite nanowire-based optical detection structure of the present invention.
FIG. 2 is a perovskite nanowire with a gap of the present invention formed by holes aligned along the length of the nanowire.
Fig. 3 is a perovskite nanowire-based optical detection structure with a metal thin film according to the present invention.
Fig. 4 is a schematic view of the strip structure and perovskite nanowire position of the present invention.
In the figure: 1. an electrode; 2. perovskite nanowires; 3. a gap; 4. a hole; 5. a silicon dioxide layer; 6. a silicon substrate layer; 7. a metal thin film; 8. a strip-shaped structure.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example 1:
as shown in fig. 1, the optical probe structure based on the perovskite nanowire comprises an electrode 1, a perovskite nanowire 2, a silicon dioxide layer 5 and a silicon substrate layer 6, wherein the silicon dioxide layer 5 is arranged on the silicon substrate layer 6, the perovskite nanowire 2 is arranged on the silicon dioxide layer 5, and two ends of the perovskite nanowire 2 are respectively connected with two identical electrodes 1. Specifically, in the present embodiment, the perovskite nanowire 2 is MAPbI3Nanowires having a width of between 0.5 microns and 2 microns. As shown in fig. 1, the perovskite nanowire 2 has a slit 3. The slits 3 are strip-shaped along the length direction of the perovskite nanowires 2. The bar-shaped gap 3 divides the perovskite nanowire 2 into two relatively thinner nanowires, the width of the two thinner nanowires is close to the wavelength of incident light, and the coupling of the incident light and the perovskite nanowire 2 is enhanced, so that the generation of photon-generated carriers is promoted, and the sensitivity of light detection is improved.
Furthermore, the strip-shaped gaps 3 are provided with sawtooth-shaped boundaries, the tooth shapes of the strip-shaped gaps 3 are different in size and have different transverse sizes, and therefore the perovskite nano wires 2 are strongly coupled with incident light with different wavelengths.
In particular, as shown in fig. 2, the strip-shaped slits 3 may also be formed by holes 4 arranged along the length direction of the nanowires. The incident light irradiates the holes 4, local vibration is formed around the holes 4, the coupling of the perovskite nanowires 2 and the incident light is enhanced, and the detection sensitivity is improved. In addition, the gap 3 reduces the effective width of the perovskite nanowire 2 and the effective area of the current section in the nanowire, so that the perovskite nanowire 2 is more sensitive to the change of incident light. The holes 4 may be square, rectangular, circular, etc., each of which may enhance the coupling between the holes 4 and linearly polarized or natural light. The hole 4 can also be in an L shape with two arms with different lengths, a U shape with two arms with different lengths, a Chinese character 'Wan' shape and other chiral structures, and different absorption is generated for different circularly polarized light, so that the circular polarization state of incident light is judged. For holes 4 with chirality, the holes 4 may also be formed by two rectangular holes with off-center centers. Experimentally, these holes were made by ion beam etching. The ion beam etching method has high precision and is easy to control the appearance of the holes.
Example 2:
in addition to the embodiment 1, as shown in fig. 3, a metal thin film 7 is further disposed between the silicon substrate layer 6 and the silicon dioxide layer 5, and the perovskite nanowire 2 also has the gap 3. Thus, the perovskite nanowire 2 forms a strong coupling with the metal thin film 7 and has a surface plasmon resonance that enhances the coupling of the perovskite nanowire 2 with incident light. Especially, when the perovskite nanowire 2 has the gap 3 or the hole 4, strong local electromagnetic fields are formed among the nanowires at two sides of the gap 3, the nanowires and the metal thin film 7, especially, the local electromagnetic fields between the nanowires and the metal thin film 7 are also distributed among the gap 3, and the strong local electromagnetic fields are favorable for enhancing the coupling between the perovskite nanowire 2 and incident light, so that the detection sensitivity is improved.
Example 3:
on the basis of example 2, as shown in fig. 4, the metal thin film 7 is formed by arranging not less than two strip-shaped structures 8 in parallel. The arrangement direction of the strip-shaped structures 8 is perpendicular to the perovskite nanowires 2. When incident light impinges on the strip structures 8, surface electromagnetic waves are formed on the strip structures 8, which surface electromagnetic waves propagate along the strip structures 8 and will couple to the perovskite nanowires 2 when they propagate underneath the perovskite nanowires 2. Since these surface electromagnetic waves are excited at the non-perovskite nanowires 2, the area of the perovskite nanowires 2 receiving incident light is increased, thereby increasing the intensity of received light and further improving the detection sensitivity.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (7)
1. A light detection structure based on perovskite nanowires, characterized in that: the method comprises the following steps: the electrode, perovskite nanowire, silicon dioxide layer, silicon substrate layer, the silicon dioxide layer is put on silicon substrate layer, the perovskite nanowire is put on silicon dioxide layer; the width of the perovskite nanowire is between 0.5 and 2 microns; two ends of the perovskite nanowire are respectively connected with an electrode, and a gap is formed in the middle of the perovskite nanowire;
and a metal layer is arranged between the silicon substrate layer and the silicon dioxide layer, a local electromagnetic field is formed between the metal layer and the perovskite nanowire, and the local electromagnetic field is distributed in the gap.
2. The perovskite nanowire-based light detection structure of claim 1, wherein: the gap is in a strip shape along the length direction of the perovskite nanowire.
3. The perovskite nanowire-based light detection structure of claim 2, wherein: the strips have a serrated boundary.
4. The perovskite nanowire-based light detection structure of claim 1, wherein: the slit is formed by holes arranged along the length direction of the nanowire.
5. The perovskite nanowire-based light detection structure of claim 1, wherein: the slit is prepared by an ion beam etching method.
6. The perovskite nanowire-based light detection structure of claim 1, wherein: the metal layer is formed by at least two strip-shaped structures which are arranged in parallel.
7. The perovskite nanowire-based light detection structure of claim 6, wherein: the arrangement direction of the strip-shaped structures is perpendicular to the perovskite nano wires.
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