CN110224068A - Optical detection structure based on perovskite nanowire - Google Patents
Optical detection structure based on perovskite nanowire Download PDFInfo
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- CN110224068A CN110224068A CN201910591552.7A CN201910591552A CN110224068A CN 110224068 A CN110224068 A CN 110224068A CN 201910591552 A CN201910591552 A CN 201910591552A CN 110224068 A CN110224068 A CN 110224068A
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- nano wire
- perovskite nano
- perovskite
- optical detection
- detection structure
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- 239000002070 nanowire Substances 0.000 title claims abstract description 73
- 238000001514 detection method Methods 0.000 title claims abstract description 33
- 230000003287 optical effect Effects 0.000 title claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 5
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 10
- 230000031700 light absorption Effects 0.000 abstract 1
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 235000012149 noodles Nutrition 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000009102 absorption Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention relates to the technical field of optical detection structures, in particular to an optical detection structure based on perovskite nanowires. The silicon dioxide layer is arranged on the silicon substrate layer, the perovskite nanowire with the gaps is arranged on the silicon dioxide layer, and the electrodes are loaded at two ends of the perovskite nanowire with the gaps. The perovskite nanowire with the slits enhances absorption of light and reduces the area of a current cross section, thereby improving detection sensitivity.
Description
Technical field
The invention belongs to optical detection technical field of structures, and in particular to a kind of optical detection knot based on perovskite nano wire
Structure.
Background technique
Perovskite material is direct band gap material, is had from visible light to the wide absorption spectrum of near-infrared waveguide, is that it is high
Photoelectric conversion efficiency is laid a good foundation.Although perovskite monocrystalline crystal has extremely low defect state density, weak light detection is being realized
Aspect has very big application potential, and still, the sensitivity for Dim light measurement is still lower.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of light based on perovskite nano wire
Detecting structure.The technical problem to be solved in the present invention is achieved through the following technical solutions:
A kind of optical detection structure based on perovskite nano wire, comprising: electrode, perovskite nano wire, silicon dioxide layer, silicon substrate
Layer, silica are placed in silicon substrate layer, and perovskite nano wire is placed in silicon dioxide layer；Perovskite nano wire both ends
It is connected separately with an electrode, the perovskite nano wire has a gap.
Further, the gap is the bar shaped along perovskite nanowire length direction.
Further, the bar shaped has serrated boundary.
Further, the gap is made of the hole arranged along nanowire length direction.
Further, the gap is prepared by ion beam etching method.
Further, a metallic film is additionally provided between the silicon substrate layer and the silicon dioxide layer.
Further, the metallic film is constituted by the strip structure for being no less than two is arranged in parallel.
Further, the strip structure orientation is perpendicular to the perovskite nano wire
Compared with prior art, beneficial effects of the present invention:
1, the present invention increases the coupling of perovskite nano wire and incident light, substantially by the way that gap is arranged on perovskite nano wire
Degree improves generation, separation and the extraction of photo-generated carrier, and the carrier concentration in unit area increases, and the present invention is based on perovskites
The optical detection structure of nano wire, which converts optical signal into, is easy to detection and the stronger electric signal of intensity, direct compared to optical signal
Detection, optical detection structure of the present invention is small by external environmental interference, and the inspection for incident light can be further improved in high sensitivity
Survey sensitivity.
2, by the way that metal layer is arranged below perovskite nano wire in the present invention, the shape between metal layer and perovskite nano wire
At very strong coupling, very strong local electric field is generated, energy is gathered between perovskite nano wire and metallic film, the present invention
Optical detection structure based on perovskite nano wire converts optical signal into the electric signal for being easy to detect, and the electric field local excited
Change degree is high, is conducive to detection, and the optical detection thaumatropy the present invention is based on perovskite nano wire is the electric signal for being easy to detect, from
And improve the detection sensitivity of optical detection structure of the present invention.
3, in the present invention, after gap is arranged on perovskite nano wire, conducting electric current is effectively cut in perovskite nano wire
Area reduces, and is increased by the current strength of unit cross-sectional area, to improve detection sensitivity.
Detailed description of the invention
Fig. 1 is the optical detection structural schematic diagram the present invention is based on perovskite nano wire.
Fig. 2 is the perovskite nano wire that gap of the present invention is made of the hole arranged along nanowire length direction.
Fig. 3 is the optical detection structure based on perovskite nano wire that the present invention has metallic film.
Fig. 4 is strip structure of the present invention and perovskite nano wire position view.
In figure: 1, electrode；2, perovskite nano wire；3, gap；4, hole；5, silicon dioxide layer；6, silicon substrate layer；7, golden
Belong to film；8, strip structure.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment 1:
As shown in Figure 1, light based on perovskite nano wire visit structure include electrode 1, perovskite nano wire 2, silicon dioxide layer 5,
Silicon substrate layer 6, silicon dioxide layer 5 are placed in silicon substrate layer 6, and perovskite nano wire 2 is placed in silicon dioxide layer 5, and perovskite is received
2 both ends of rice noodles are separately connected there are two identical electrode 1.Specifically, perovskite nano wire 2 is MAPbI in the present embodiment3Nanometer
Line, width are between 0.5 micron to 2 microns.As shown in Figure 1, perovskite nano wire 2 has a gap 3.Gap 3 is edge
The bar shaped of the length direction of perovskite nano wire 2.Perovskite nano wire 2 is divided into two relatively thinner receive by strip crevice 3
Rice noodles, the width of two thinner nano wires and the wavelength of incident light are close, are conducive to enhance incident light and perovskite nano wire 2
Coupling, to promote the generation of photo-generated carrier, and then improve the sensitivity of optical detection.
Further, strip crevice 3 has serrated boundary, and the tooth form of strip crevice 3 is of different sizes, has inconsistent
Lateral dimension, so that perovskite nano wire 2 generates very strong couple with different wave length incident light.
Particularly, as shown in Fig. 2, strip crevice 3 can also be to be made of the hole 4 arranged along nanowire length direction.
Incident light irradiates hole 4, and local vibration is formed in around hole 4, enhances the coupling of perovskite nano wire 2 and incident light, mentions
High detection sensitivity.In addition, gap 3 reduces the effective width of perovskite nano wire 2, reduce current cross section in nano wire
Effective area, so that perovskite nano wire 2 is more sensitive to the variation of incident light.Hole 4 can be for rectangular, rectangle, circle etc.,
The coupling between hole 4 and linear polarization or natural light can be enhanced.Hole 4 can also have for L shape, the two-arm of the inconsistent length of two-arm
There are the chiral structures such as U-shaped, the fylfot of inconsistent length, different circularly polarized lights are generated with different absorptions, to judge incidence
The circular polarization state of light.For having chiral hole 4, hole 4 can also be made of the rectangular opening of two center deviations.Experiment
On, these holes are prepared by ion beam etching method.Ion beam etching method precision is high, is easy to control the pattern of hole.
Embodiment 2:
On the basis of embodiment 1, as shown in figure 3, being additionally provided with a metal foil between silicon substrate layer 6 and silicon dioxide layer 5
Film 7, perovskite nano wire 2 equally have gap 3.Since in this way, perovskite nano wire 2 and metallic film 7 formed close coupling and
With surface plasmon resonance, the resonant check coupling of perovskite nano wire 2 and incident light.Especially when perovskite is received
When rice noodles 2 have gap 3 or hole 4, it will form between the nano wires of 3 two sides of gap, nano wire and metallic film 7 strong
Local electromagnetic field between local electromagnetic field, especially nano wire and metallic film 7 is also distributed about between gap 3, these strong locals
Electromagnetic field is conducive to enhance the coupling of perovskite nano wire 2 and incident light, to improve detection sensitivity.
Embodiment 3:
On the basis of embodiment 2, as shown in figure 4, metallic film 7 is constituted by the strip structure 8 for being no less than two is arranged in parallel.
8 orientation of strip structure is perpendicular to perovskite nano wire 2.When incident light is irradiated on strip structure 8, in strip structure 8
Upper formation surface electromagnetic wave, which propagates along strip structure 8, when the surface electromagnetic wave travels to perovskite nanometer
When the lower section of line 2, it will be coupled on perovskite nano wire 2.Since these surface electromagnetic waves are swashed at non-perovskite nano wire 2
Hair, so, receive the area of incident light equivalent to increase perovskite nano wire 2, so that the intensity for receiving light is improved, into
And improve detection sensitivity.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (8)
1. a kind of optical detection structure based on perovskite nano wire, it is characterised in that: include: electrode, perovskite nano wire, dioxy
SiClx layer, silicon substrate layer, silica are placed in silicon substrate layer, and perovskite nano wire is placed in silicon dioxide layer；The calcium
Titanium ore nano wire both ends are connected separately with an electrode, and the perovskite nano wire has a gap.
2. the optical detection structure according to claim 1 based on perovskite nano wire, it is characterised in that: the gap is edge
The bar shaped in perovskite nanowire length direction.
3. the optical detection structure according to claim 2 based on perovskite nano wire, it is characterised in that: the bar shaped has
Serrated boundary.
4. the optical detection structure according to claim 1 based on perovskite nano wire, it is characterised in that: the gap is by edge
The hole of nanowire length direction arrangement is constituted.
5. the optical detection structure according to claim 1 based on perovskite nano wire, it is characterised in that: the gap by from
The preparation of beamlet lithographic method.
6. any optical detection structure based on perovskite nano wire described in -5 according to claim 1, it is characterised in that: the silicon
A metallic film is additionally provided between substrate layer and the silicon dioxide layer.
7. the optical detection structure according to claim 6 based on perovskite nano wire, it is characterised in that: the metallic film
Strip structure by being no less than two is arranged in parallel to be constituted.
8. the optical detection structure according to claim 7 based on perovskite nano wire, it is characterised in that: the strip structure
Orientation is perpendicular to the perovskite nano wire.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910591552.7A CN110224068B (en) | 2019-07-02 | 2019-07-02 | Optical detection structure based on perovskite nanowire |
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| CN201910591552.7A CN110224068B (en) | 2019-07-02 | 2019-07-02 | Optical detection structure based on perovskite nanowire |
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| CN110224068A true CN110224068A (en) | 2019-09-10 |
| CN110224068B CN110224068B (en) | 2021-01-22 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111416044A (en) * | 2020-01-20 | 2020-07-14 | 重庆科技学院 | Core layer of perovskite nanowire with tiled shell-core structure and solar cell manufacturing method thereof |
Citations (6)
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|---|---|---|---|---|
| CN1349665A (en) * | 1999-12-27 | 2002-05-15 | 精工爱普生株式会社 | Solar cell and solar cell unit |
| CN104115297A (en) * | 2011-12-16 | 2014-10-22 | 西蒙菲莎大学 | Organic optoelectronic devices with surface plasmon structures and methods of manufacture |
| CN105591285A (en) * | 2016-03-23 | 2016-05-18 | 哈尔滨工业大学 | Surface plasmon laser device based on perovskite nanowire |
| CN106773540A (en) * | 2016-11-29 | 2017-05-31 | 四川大学 | A kind of large-area nano gap array and preparation method thereof |
| CN107316944A (en) * | 2017-06-22 | 2017-11-03 | 长江大学 | A kind of photodetector with netted perovskite nano wire and preparation method thereof |
| CN207381434U (en) * | 2017-07-04 | 2018-05-18 | 湖南湘标新材料科技有限公司 | A kind of perovskite nano-wire array photodetector |
-
2019
- 2019-07-02 CN CN201910591552.7A patent/CN110224068B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1349665A (en) * | 1999-12-27 | 2002-05-15 | 精工爱普生株式会社 | Solar cell and solar cell unit |
| CN104115297A (en) * | 2011-12-16 | 2014-10-22 | 西蒙菲莎大学 | Organic optoelectronic devices with surface plasmon structures and methods of manufacture |
| CN105591285A (en) * | 2016-03-23 | 2016-05-18 | 哈尔滨工业大学 | Surface plasmon laser device based on perovskite nanowire |
| CN106773540A (en) * | 2016-11-29 | 2017-05-31 | 四川大学 | A kind of large-area nano gap array and preparation method thereof |
| CN107316944A (en) * | 2017-06-22 | 2017-11-03 | 长江大学 | A kind of photodetector with netted perovskite nano wire and preparation method thereof |
| CN207381434U (en) * | 2017-07-04 | 2018-05-18 | 湖南湘标新材料科技有限公司 | A kind of perovskite nano-wire array photodetector |
Non-Patent Citations (1)
| Title |
|---|
| CAN ZHU, YANG TANG, FENG CHEN, ET AL.: "Fabrication of self-assembly polycrystalline perovskite microwires and photodetectors.", 《JOURNAL OF CRYSTAL GROWTH》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111416044A (en) * | 2020-01-20 | 2020-07-14 | 重庆科技学院 | Core layer of perovskite nanowire with tiled shell-core structure and solar cell manufacturing method thereof |
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