CN110223994A - Pixel group and imaging sensor - Google Patents
Pixel group and imaging sensor Download PDFInfo
- Publication number
- CN110223994A CN110223994A CN201910486136.0A CN201910486136A CN110223994A CN 110223994 A CN110223994 A CN 110223994A CN 201910486136 A CN201910486136 A CN 201910486136A CN 110223994 A CN110223994 A CN 110223994A
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- CN
- China
- Prior art keywords
- pixel group
- diffusion region
- floating diffusion
- photosensitive
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000003384 imaging method Methods 0.000 title claims abstract description 11
- 238000009792 diffusion process Methods 0.000 claims abstract description 26
- 230000005540 biological transmission Effects 0.000 claims abstract description 7
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
Abstract
The present invention provides a kind of pixel group and imaging sensor, the pixel group includes: a floating diffusion region: around six photosensitive areas of the radial setting of the floating diffusion region, the outer edge profile of six photosensitive areas collectively forms a regular hexagon；Six transmission grid being set between the floating diffusion region and each photosensitive area；And the isolated area for six photosensitive areas to be isolated.
Description
Technical field
The present invention relates to field of manufacturing semiconductor devices more particularly to a kind of pixel group and imaging sensors.
Background technique
Pixel in imaging sensor is array arrangement.It is that pixel in the prior art is arranged shown in attached drawing 1A and attached drawing 1B
The structural schematic diagram of cloth, including photosensitive area 10, transmission grid 11, floating diffusion region 12 and p-type isolated area 13.Wherein attached drawing 1A
It is that four photosensitive areas 10 share a floating diffusion region 12, attached drawing 1B is that two photosensitive areas 10 share a floating diffusion region 12.
If method can only expand the pixel region gross area, or contract as can be seen that increase image sensor pixel in from the graph
Small single elemental area.Expanding the pixel region gross area will increase the size of chip, and reducing single elemental area will affect single picture
The image quality of element.It is difficult the effect for accomplishing to make the best of both worlds.Therefore, how to increase on the basis of not reducing single elemental area
Pixel quantity is prior art problem to be solved.
Summary of the invention
The technical problem to be solved by the invention is to provide a kind of pixel group and imaging sensors, can not reduce
Increase pixel quantity on the basis of single elemental area.
To solve the above-mentioned problems, the present invention provides a kind of pixel groups, comprising: a floating diffusion region: around described floating
Six photosensitive areas of the radial setting in diffusion region are set, the outer edge profile of six photosensitive areas collectively forms a regular hexagon；
Six transmission grid being set between the floating diffusion region and each photosensitive area；And the isolation for six photosensitive areas to be isolated
Area.
Optionally, the photosensitive area and floating diffusion region are n-type doping, and the isolated area is p-type doping.
Optionally, the floating diffusion region is regular hexagon.
A kind of imaging sensor, including multiple pixel groups described in claim 1.
Optionally, the pixel group is arranged in honeycomb.
Optionally, the pixel group is arranged in matrix.
Above-mentioned pixel group obtains 6 photosensitive areas, the case where not increasing the gross area in such a way that hexagon is arranged
Under, obtain more pixels.
Detailed description of the invention
It is the structural schematic diagram of pixel arrangement in the prior art shown in attached drawing 1A and attached drawing 1B.
It is the structural schematic diagram of pixel group described in the embodiment of the invention shown in attached drawing 2；Attached drawing 3 is 2 institute of attached drawing
Show the equivalent circuit diagram of pixel group.
It is the structural schematic diagram of element sensor described in the specific embodiment of the invention shown in attached drawing 4A and attached drawing 4B.
Specific embodiment
The specific embodiment of pixel group provided by the invention and imaging sensor is done specifically with reference to the accompanying drawing
It is bright.
It is the structural schematic diagram of pixel group 2 described in the embodiment of the invention shown in attached drawing 2, including photosensitive area 20,
Floating diffusion region 21, transmission grid 22 and isolated area 24.
The floating diffusion region 21 is formed for semiconductor doping.It is photosensitive around the radial setting six of the floating diffusion region
The outer edge profile in area 20, six photosensitive areas 20 collectively forms a regular hexagon.The outer edge profile is the pixel
The shape of group 2, the shape of regular hexagon are conducive to the pixel group 2 in the seamless extension of in-plane.In the floating diffusion region
Between 21 and each photosensitive area 20 setting transmission grid 22, altogether there are six.Transmit grid 22 and 21 structure of photosensitive area 20 and floating diffusion region
At a light sensing transistor structure.Isolated area 24 uses the doping way different from photosensitive area 20, for six photosensitive areas 20 to be isolated
With floating diffusion region 21.Attached drawing 3 is the equivalent circuit diagram of pixel group 2 shown in attached drawing 2.
In this embodiment, the photosensitive area 20 and floating diffusion region 21 are n-type doping, and the isolated area 24 is
P-type doping.Photosensitive area 20 irradiates and generates photo-generated carrier for experiencing ambient, and transmission grid 22 are for controlling photosensitive area
20 and the switching logic of transistor that is constituted of floating diffusion region 21.Above-mentioned pixel group obtains in such a way that hexagon is arranged
6 photosensitive areas were obtained, in the case where not increasing the gross area, obtain more pixels.
In order to obtain better photosensitive effect, in this embodiment, the floating diffusion region 21 setting is positive six
Side shape cooperates with the number and shape of the photosensitive area 20 around its setting, makes between each photosensitive area 20 and floating diffusion region 21
Equivalent distances be all it is identical, to guarantee the electricity consistency of different photosensitive areas 20.
It is the structural schematic diagram of element sensor described in the specific embodiment of the invention shown in attached drawing 4A and attached drawing 4B.Attached
In Fig. 4 A, the pixel group 2 is arranged in honeycomb；In attached drawing 4B, the pixel group 2 is arranged in matrix.Above-mentioned pixel group
In such a way that hexagon is arranged, 6 photosensitive areas are obtained, in the case where not increasing the gross area, obtain more pixels.
Especially for the honeycomb arrangement mode of attached drawing 4A, more pictures can be more obtained on the unit area of element sensor
Element.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (6)
1. a kind of pixel group characterized by comprising
One floating diffusion region:
Around six photosensitive areas of the radial setting of the floating diffusion region, the common structure of outer edge profile of six photosensitive areas
At a regular hexagon；
Six transmission grid being set between the floating diffusion region and each photosensitive area；And
For the isolated area of six photosensitive areas to be isolated.
2. pixel group according to claim 1, which is characterized in that the photosensitive area and floating diffusion region are n-type doping, institute
Isolated area is stated as p-type doping.
3. pixel group according to claim 1, which is characterized in that the floating diffusion region is regular hexagon.
4. a kind of imaging sensor, which is characterized in that including multiple pixel groups described in claim 1.
5. imaging sensor according to claim 4, which is characterized in that the pixel group is arranged in honeycomb.
6. imaging sensor according to claim 4, which is characterized in that the pixel group is arranged in matrix.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910486136.0A CN110223994A (en) | 2019-06-05 | 2019-06-05 | Pixel group and imaging sensor |
| CN201911005692.8A CN111180475A (en) | 2019-06-05 | 2019-10-22 | Pixel group and image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910486136.0A CN110223994A (en) | 2019-06-05 | 2019-06-05 | Pixel group and imaging sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110223994A true CN110223994A (en) | 2019-09-10 |
Family
ID=67819419
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910486136.0A Pending CN110223994A (en) | 2019-06-05 | 2019-06-05 | Pixel group and imaging sensor |
| CN201911005692.8A Pending CN111180475A (en) | 2019-06-05 | 2019-10-22 | Pixel group and image sensor |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911005692.8A Pending CN111180475A (en) | 2019-06-05 | 2019-10-22 | Pixel group and image sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN110223994A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114725147A (en) * | 2022-05-16 | 2022-07-08 | 晶芯成(北京)科技有限公司 | Image sensor and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100818724B1 (en) * | 2006-07-19 | 2008-04-01 | 삼성전자주식회사 | CMOS image sensor and sensing method thereof |
| CN108391450B (en) * | 2015-10-21 | 2022-07-01 | 赫普塔冈微光有限公司 | Demodulation pixel element, pixel element array, and photoelectric element incorporating the same |
| US20180301484A1 (en) * | 2017-04-17 | 2018-10-18 | Semiconductor Components Industries, Llc | Image sensors with high dynamic range and autofocusing hexagonal pixels |
-
2019
- 2019-06-05 CN CN201910486136.0A patent/CN110223994A/en active Pending
- 2019-10-22 CN CN201911005692.8A patent/CN111180475A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114725147A (en) * | 2022-05-16 | 2022-07-08 | 晶芯成(北京)科技有限公司 | Image sensor and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111180475A (en) | 2020-05-19 |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190910 |
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| WD01 | Invention patent application deemed withdrawn after publication |