CN110223648A - Driving circuit for display screen - Google Patents
Driving circuit for display screen Download PDFInfo
- Publication number
- CN110223648A CN110223648A CN201910382521.0A CN201910382521A CN110223648A CN 110223648 A CN110223648 A CN 110223648A CN 201910382521 A CN201910382521 A CN 201910382521A CN 110223648 A CN110223648 A CN 110223648A
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- Prior art keywords
- thin film
- tft
- film transistor
- pull
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Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3696—Generation of voltages supplied to electrode drivers
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0209—Crosstalk reduction, i.e. to reduce direct or indirect influences of signals directed to a certain pixel of the displayed image on other pixels of said image, inclusive of influences affecting pixels in different frames or fields or sub-images which constitute a same image, e.g. left and right images of a stereoscopic display
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The present invention provides a kind of driving circuit for display screen comprising: pull-up unit, the pull-up unit are used to clock signal being converted to a grade communication number, and d. c. voltage signal is converted to output signal；Pull-up control unit, the pull-up control unit are used to control the opening time of the pull-up unit；Bootstrap capacitor, the bootstrap capacitor is for being lifted the grade communication number and output signal voltage；Drop-down unit, the drop-down unit are used for the output voltage of bootstrap capacitor down for low potential；Maintenance unit is pulled down, the drop-down maintenance unit is used to the output voltage drawing of bootstrap capacitor remaining low potential；Phase inverter, the phase inverter is for keeping the output voltage of the bootstrap capacitor opposite with the drop-down output voltage current potential of maintenance unit；And feedback unit, the feedback unit are used to improve the output voltage of drop-down unit.
Description
Technical field
The present invention relates to field of electronic display more particularly to a kind of driving circuits for display screen.
Background technique
The response time of blue phase liquid crystal is submillimeter level.Compared to other kinds of display, using the aobvious of blue phase liquid crystal
Show that device preparation process is simple, visual angle is wide, the response time is fast.But the driving voltage of blue phase liquid crystal is relatively high (being greater than 30V), with
Matched driving circuit output driving voltage it is also relatively high.The current potential of the output signal of driving circuit by clock signal and
The current potential of trigger signal determines that the current potential of clock signal increases, and can greatly increase between the power consumption and signal of driving circuit
Crosstalk.
Summary of the invention
The present invention provides a kind of driving circuit for display screen, and the power consumption of driving circuit can be greatly lowered, and
Reduce the crosstalk between signal.
To solve the above problems, the present invention provides a kind of driving circuits for display screen comprising:
Pull-up unit, the pull-up unit are used to clock signal being converted to a grade communication number, d. c. voltage signal are converted
For output signal；
Pull-up control unit, the pull-up control unit are used to control the opening time of the pull-up unit；
Bootstrap capacitor, the bootstrap capacitor is for being lifted the grade communication number and output signal voltage；
Drop-down unit, the drop-down unit are used for the output voltage of bootstrap capacitor down for low potential；
Maintenance unit is pulled down, the drop-down maintenance unit is used to the output voltage drawing of bootstrap capacitor remaining low potential；
Phase inverter, the phase inverter are used to make the output voltage of the bootstrap capacitor and the output voltage of drop-down maintenance unit
Current potential is opposite；And
Feedback unit, the feedback unit are used to improve the output voltage of drop-down unit.
One aspect according to the present invention, the pull-up unit include the first pull-up unit and the second pull-up unit；
First pull-up unit includes that the first pull-up thin film transistor (TFT), the second pull-up thin film transistor (TFT) and third pull-up are thin
Film transistor；Wherein,
The source electrode of the first pull-up thin film transistor (TFT) connects the first DC voltage, and drain electrode connects the drop-down unit, grid
The drain electrode of the grid and third pull-up thin film transistor (TFT) of pole connection the second pull-up thin film transistor (TFT)；
The source electrode of the second pull-up thin film transistor (TFT) connects the first DC voltage, and drain electrode connects the one of the bootstrap capacitor
A pole plate；
The source electrode of the third pull-up thin film transistor (TFT) connects the second DC voltage, and grid connects the grade communication of upper level
Number, drain electrode connects another pole plate of the bootstrap capacitor；
Second pull-up unit includes the 4th pull-up thin film transistor (TFT), and the source electrode of the 4th pull-up thin film transistor (TFT) connects
Second clock signal is connect, grid connects the bootstrap capacitor, drain electrode connection third DC voltage.
One aspect according to the present invention, the first pull-up thin film transistor (TFT) and third pull-up thin film transistor (TFT) are
N-type TFT, the second pull-up thin film transistor (TFT) and the 4th pull-up thin film transistor (TFT) are P-type TFT.
One aspect according to the present invention, the pull-up control unit include the first control thin film transistor (TFT) and second
Control thin film transistor (TFT)；Wherein,
The grade communication number of the source electrode connection upper level of the first control thin film transistor (TFT), grid connect the first clock letter
Number, the source electrode of drain electrode connection the second control thin film transistor (TFT)；
The grid of the second control thin film transistor (TFT) connects first clock signal, and drain electrode connects the drop-down and maintains
Unit.
One aspect according to the present invention, the first control thin film transistor (TFT) and the second control thin film transistor (TFT) are
N-type TFT.
One aspect according to the present invention, the drop-down unit include the first drop-down unit and the second drop-down unit；
Wherein,
First drop-down unit includes the first pull-down thin film, and the source electrode of first pull-down thin film connects
First pull-up unit is connect, grid connects the grade communication number of next stage, and drain electrode connects the third DC voltage；
Second drop-down unit includes the second pull-down thin film and third pull-down thin film；
The source electrode of second pull-down thin film connects the bootstrap capacitor, and grid connects the grade communication of next stage
Number, drain electrode connects the source electrode of the third pull-down thin film；
The grade communication number of the grid connection next stage of the third pull-down thin film, drain electrode connect the third direct current
Voltage.
One aspect according to the present invention, first pull-down thin film and third pull-down thin film are
N-type TFT, second pull-down thin film are P-type TFT.
One aspect according to the present invention, the drop-down maintenance unit include under the first drop-down maintenance unit and second
Draw maintenance unit；Wherein,
The first drop-down maintenance unit includes the first maintenance thin film transistor (TFT), the second maintenance thin film transistor (TFT) and the third dimension
Hold thin film transistor (TFT)；
Described first maintains the source electrode of thin film transistor (TFT) to connect first pull-up unit, and grid connection described second maintains
The grid of thin film transistor (TFT), drain electrode connect the third DC voltage；
Described second maintains the source electrode of thin film transistor (TFT) to connect second pull-up unit, and drain electrode connects the third direct current
Voltage；
The third maintains the source electrode of thin film transistor (TFT) to connect the bootstrap capacitor, and drain electrode connects the third direct current
Pressure；
The second drop-down maintenance unit includes that the 5th maintenance thin film transistor (TFT) and 6 DOF hold thin film transistor (TFT)；
Described 5th maintains the source electrode of thin film transistor (TFT) to connect the pull-up control unit, and grid connects the phase inverter,
Drain electrode connects the source electrode that the 6 DOF holds thin film transistor (TFT)；
The grid that the 6 DOF holds thin film transistor (TFT) connects the phase inverter, and drain electrode connects the third DC voltage.
One aspect according to the present invention, the first maintenance thin film transistor (TFT) and third maintenance thin film transistor (TFT),
It is N-type TFT that 5th maintenance thin film transistor (TFT) and 6 DOF, which hold thin film transistor (TFT), and described second maintains thin film transistor (TFT)
For P-type TFT.
One aspect according to the present invention, the phase inverter include the first phase inverter and the second phase inverter；Wherein,
First phase inverter includes the first reversed thin film transistor (TFT), the second reversed thin film transistor (TFT), the reversed film of third
Transistor and the 4th reversed thin film transistor (TFT)；
The source electrode of the first reversed thin film transistor (TFT) connects second drop-down unit with grid, drain electrode connection described the
The source electrode of two reversed thin film transistor (TFT)s；
The grid of the second reversed thin film transistor (TFT) connects second drop-down unit, and drain electrode connects the third direct current
Voltage；
The source electrode of the reversed thin film transistor (TFT) of third connects second drop-down unit, and grid connection described first is reversed
The drain electrode of thin film transistor (TFT), drain electrode connect the source electrode of the 4th reversed thin film transistor (TFT)；
The grid of the 4th reversed thin film transistor (TFT) connects the grid of the described second reversed thin film transistor (TFT), drain electrode connection
The third DC voltage；
Second phase inverter includes the 5th reversed thin film transistor (TFT), the 6th reversed thin film transistor (TFT), the 7th reversed film
Transistor and the 8th reversed thin film transistor (TFT)；
The grid of the 5th reversed thin film transistor (TFT) connects the feedback unit with source electrode, and drain electrode connection the described 6th is anti-
To the source electrode of thin film transistor (TFT)；
The grid of the 6th reversed thin film transistor (TFT) connects second pull-up unit, and drain electrode connects the third direct current
Voltage；
The source electrode of the 7th reversed thin film transistor (TFT) connects the feedback unit, and grid connects the 5th reversed film
The drain electrode of transistor, drain electrode connect the source electrode of the 8th reversed thin film transistor (TFT)；
The grid of the 8th reversed thin film transistor (TFT) connects the grid of the 6th reversed thin film transistor (TFT), drain electrode connection
The third DC voltage.
One aspect according to the present invention, the first reversed thin film transistor (TFT), the reversed thin film transistor (TFT) of third,
Four reversed thin film transistor (TFT)s, the 5th reversed thin film transistor (TFT), the 7th reversed thin film transistor (TFT) and the 8th reversed thin film transistor (TFT) are N
Type thin film transistor (TFT)；The second reversed thin film transistor (TFT) and the 6th reversed thin film transistor (TFT) are P-type TFT.
One aspect according to the present invention, the feedback unit include feedback thin film transistor (TFT), the feedback film
The source electrode of transistor connects first pull-up unit, and drain electrode connects the pull-up control unit, and the grade that grid connects the same level passes
Signal.
One aspect according to the present invention, the feedback thin film transistor (TFT) are N-type TFT.
One aspect according to the present invention, the bootstrap capacitor include the first storage capacitance and the second storage capacitance；
Wherein,
One pole plate of first storage capacitance connects first pull-up unit, another pole plate connects the drop-down
Maintenance unit；
One pole plate of second storage capacitance connects second pull-up unit, another pole plate connection described second
Drop-down unit.
Driving circuit provided by the invention can raise the voltage of clock signal, so that electricity of the driving circuit in internal node
Pressure signal keeps exporting the high voltage for driving blue phase liquid crystal while lower voltage value, and driving circuit can be greatly lowered
Power consumption, and reduce the crosstalk between signal.
Detailed description of the invention
The circuit diagram of driving circuit in specific embodiment Fig. 1 of the invention；
Fig. 2 is the timing diagram of the driving signal in the driving circuit in Fig. 1；
Fig. 3 is the simulation result schematic diagram of the driving circuit in a specific embodiment of the invention.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention
Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
The present invention provides a kind of driving circuits for display screen, as shown in Figure 1, comprising: pull-up unit M2, described
Pull-up unit M2 is used to clock signal being converted to a grade communication number, and d. c. voltage signal is converted to output signal；Pull-up control
Unit M1, the pull-up control unit M1 are used to control the opening time of the pull-up unit M2；Bootstrap capacitor, the bootstrapping electricity
Hold for being lifted the grade communication number and output signal voltage；Drop-down unit M3, the drop-down unit M3 are used for bootstrap capacitor
Output voltage down for low potential；Maintenance unit M4 is pulled down, the drop-down maintenance unit M4 is used for the output of bootstrap capacitor
Voltage drawing remains low potential；Phase inverter M5, the phase inverter M5 are used to make the output voltage and drop-down dimension of the bootstrap capacitor
The output voltage current potential for holding unit M4 is opposite；And feedback unit M6, the feedback unit M6 are for improving drop-down unit M3's
Output voltage.
The pull-up unit M2 includes the first pull-up unit M21 and the second pull-up unit M22.First pull-up unit
M21 includes that the first pull-up thin film transistor (TFT) T21, the second pull-up thin film transistor (TFT) T22 and third pull up thin film transistor (TFT) T23.Its
In, the source electrode of the first pull-up thin film transistor (TFT) T21 connects the first DC voltage VDD, and drain electrode connects the drop-down unit M3,
The drain electrode of the grid and third pull-up thin film transistor (TFT) T23 of the second pull-up of grid connection thin film transistor (TFT) T22.Second pull-up
The source electrode of thin film transistor (TFT) T22 connects the first DC voltage VDD, and drain electrode connects a pole plate of the bootstrap capacitor.Described
The source electrode of three pull-up thin film transistor (TFT) T23 connects the second DC voltage VDDH, and grid connects the grade communication number of upper level, and drain electrode connects
Connect another pole plate of the bootstrap capacitor.The second pull-up unit M22 pulls up thin film transistor (TFT) T24 including the 4th, described
The source electrode of 4th pull-up thin film transistor (TFT) T24 connects second clock signal, and grid connects the bootstrap capacitor, drain electrode connection third
DC voltage VGL.
Preferably, the first pull-up thin film transistor (TFT) T21 and third pull-up thin film transistor (TFT) T23 is N-type film crystal
Pipe, the second pull-up thin film transistor (TFT) T22 and the 4th pull-up thin film transistor (TFT) T24 are P-type TFT.
The pull-up control unit M1 includes the first control thin film transistor (TFT) T11 and the second control thin film transistor (TFT) T12.Its
In, the grade communication number of the source electrode connection upper level of the first control thin film transistor (TFT) T11, grid connects the first clock signal,
The source electrode of drain electrode connection the second control thin film transistor (TFT) T12；The grid of the second control thin film transistor (TFT) T12 connects institute
The first clock signal is stated, drain electrode connects the drop-down maintenance unit M4.
The first control thin film transistor (TFT) T11 and the second control thin film transistor (TFT) T12 is N-type TFT.
The drop-down unit M3 includes the first drop-down unit M31 and the second drop-down unit M32.Wherein, first drop-down
Unit M31 includes the source electrode connection described first of the first pull-down thin film T31, the first pull-down thin film T31
Pull-up unit M21, grid connect the grade communication number of next stage, and drain electrode connects the third DC voltage VGL.Second drop-down
Unit M32 includes the second pull-down thin film T32 and third pull-down thin film T33.The second drop-down film crystal
The source electrode of pipe T32 connects the bootstrap capacitor, and grid connects the grade communication number of next stage, and drain electrode connects the third and pulls down film
The source electrode of transistor T33.The grade communication number of the grid connection next stage of the third pull-down thin film T33, drain electrode connection
The third DC voltage VGL.
Preferably, the first pull-down thin film T31 and third pull-down thin film T33 is N-type film crystal
Pipe, the second pull-down thin film T32 are P-type TFT.
The drop-down maintenance unit M4 includes the first drop-down maintenance unit M41 and the second drop-down maintenance unit M42.Wherein,
The first drop-down maintenance unit M41 includes the first maintenance thin film transistor (TFT) T41, the second maintenance thin film transistor (TFT) T42 and third
Maintain thin film transistor (TFT) T43.Described first maintains the source electrode of thin film transistor (TFT) T41 to connect the first pull-up unit M21, grid
The described second grid for maintaining thin film transistor (TFT) T42 is connected, drain electrode connects the third DC voltage VGL.Described second maintains
The source electrode of thin film transistor (TFT) T42 connects the second pull-up unit M22, and drain electrode connects the third DC voltage VGL.Described
Three maintain the source electrode of thin film transistor (TFT) T43 to connect the bootstrap capacitor, and drain electrode connects the third DC voltage VGL.Described
Two drop-down maintenance unit M42 include that the 5th maintenance thin film transistor (TFT) T45 and 6 DOF hold thin film transistor (TFT) T46.5th dimension
The source electrode for holding thin film transistor (TFT) T45 connects the pull-up control unit M1, and grid connects the phase inverter M5, drains described in connection
6 DOF holds the source electrode of thin film transistor (TFT) T46.The grid that the 6 DOF holds thin film transistor (TFT) T46 connects the phase inverter M5,
Drain electrode connects the third DC voltage VGL.
Preferably, described first maintain thin film transistor (TFT) T41 and third that thin film transistor (TFT) T43, the 5th is maintained to maintain film
It is N-type TFT that transistor T45 and 6 DOF, which hold thin film transistor (TFT) T46, and described second maintains thin film transistor (TFT) T42 for P
Type thin film transistor (TFT).
The phase inverter M5 includes the first phase inverter M51 and the second phase inverter M52.
Wherein, the first phase inverter M51 includes the first reversed thin film transistor (TFT) T51, the second reversed thin film transistor (TFT)
The reversed reversed thin film transistor (TFT) T54 of thin film transistor (TFT) T53 and the 4th of T52, third.The first reversed thin film transistor (TFT) T51's
Source electrode connects the second drop-down unit M32 with grid, and drain electrode connects the source electrode of the second reversed thin film transistor (TFT) T52.Institute
The grid for stating the second reversed thin film transistor (TFT) T52 connects the second drop-down unit M32, and drain electrode connects the third DC voltage
VGL.The source electrode of the reversed thin film transistor (TFT) T53 of third connects the second drop-down unit M32, and grid connection described first is anti-
Drain electrode to thin film transistor (TFT) T51, drain electrode connect the source electrode of the 4th reversed thin film transistor (TFT) T54.Described 4th is reversed thin
The grid of film transistor T54 connects the grid of the described second reversed thin film transistor (TFT) T52, and drain electrode connects the third DC voltage
VGL。
The second phase inverter M52 includes the 5th reversed thin film transistor (TFT) T55, the 6th reversed thin film transistor (TFT) T56, the 7th
The reversed thin film transistor (TFT) T58 of reversed thin film transistor (TFT) T57 and the 8th.The grid of the 5th reversed thin film transistor (TFT) T55 and source
Pole connects the feedback unit M6, and drain electrode connects the source electrode of the 6th reversed thin film transistor (TFT) T56.The 6th reversed film
The grid of transistor T56 connects the second pull-up unit M22, and drain electrode connects the third DC voltage VGL.Described 7th is anti-
The feedback unit M6 is connected to the source electrode of thin film transistor (TFT) T57, grid connects the leakage of the described 5th reversed thin film transistor (TFT) T55
Pole, drain electrode connect the source electrode of the 8th reversed thin film transistor (TFT) T58.The grid of the 8th reversed thin film transistor (TFT) T58 connects
The grid of the described 6th reversed thin film transistor (TFT) T56 is connect, drain electrode connects the third DC voltage VGL.
Preferably, the described first reversed thin film transistor (TFT) T51, the reversed thin film transistor (TFT) T53 of third, the 4th reversed film are brilliant
Body pipe T54, the 5th reversed thin film transistor (TFT) T55, the 7th reversed reversed thin film transistor (TFT) T58 of thin film transistor (TFT) T57 and the 8th are N
Type thin film transistor (TFT)；The second reversed reversed thin film transistor (TFT) T56 of thin film transistor (TFT) T52 and the 6th is P-type TFT.
The feedback unit M6 includes feedback thin film transistor (TFT) T6, described in the source electrode connection of the feedback thin film transistor (TFT) T6
First pull-up unit M21, drain electrode connect the pull-up control unit M1, and grid connects the grade communication number of the same level.Preferably, described
Feedback thin film transistor (TFT) T6 is N-type TFT.
The bootstrap capacitor includes the first storage capacitance Cbt1 and the second storage capacitance Cbt2.Wherein, first storage
A pole plate of capacitor Cbt1 connects the first pull-up unit M21, another pole plate connects the drop-down maintenance unit M4.Institute
A pole plate for stating the second storage capacitance Cbt2 connects the second pull-up unit M22, under another pole plate connection described second
Draw unit M32.
The working principle of the driving circuit in the present invention is described in detail below in conjunction with specific embodiments.Referring to
Fig. 2 and Fig. 3, Fig. 2 are the timing diagram of the driving signal in the driving circuit in Fig. 1；Fig. 3 is a specific embodiment of the invention
In driving circuit simulation result schematic diagram.
Wherein, CK1 is the first clock signal, and CK2 is second clock signal, the first clock signal CK1 and second clock letter
The waveform of number CK2 is opposite.COUT (n) is the grade communication number of the same level；COUT (n-1) is the grade communication number of upper level；Cout(n+1)
For the grade communication number of next stage.
Referring to Fig. 3, the duty cycle of the driving circuit in the present embodiment includes first stage T1, second stage T2 and third
Stage T3.
When the first stage: when the first clock signal CK1 is in high potential, the first control thin film transistor (TFT) T11 and second
It controls thin film transistor (TFT) T12 to open, COUT (n-1) is high potential, and Q point current potential is lifted as high potential, the 4th pull-up film crystalline substance
Body pipe T24, the second reversed reversed thin film transistor (TFT) T54 of thin film transistor (TFT) T52 and the 4th are opened, and QB is pulled low to low potential third
It maintains thin film transistor (TFT) T43, fourth dimension to hold thin film transistor (TFT) T44, the 5th maintenance thin film transistor (TFT) T45 and 6 DOF and holds film crystalline substance
Body pipe T46 is closed, and since second clock signal CK2 is low potential, the grade communication COUT (n) of the same level is low potential, and the 6th is anti-
It is closed to the reversed thin film transistor (TFT) T58 of thin film transistor (TFT) T56 and the 8th, P point is pulled up to high potential, and first maintains film crystal
Pipe T41 and second maintains thin film transistor (TFT) T42 to open, and the grade communication COUT (n-1) of upper level is high potential, and third pull-up is thin
Film transistor T23 is opened, and M point current potential is pulled to high potential, the first pull-up thin film transistor (TFT) T21 and the second pull-up thin film transistor (TFT)
T22 is opened, since the second maintenance thin film transistor (TFT) T42 and first maintains thin film transistor (TFT) T41 to open, N point and output signal G
(n) low potential is still maintained.
When second stage: when the first clock signal CK1 is in low potential, the first control thin film transistor (TFT) T11 and second
It controls thin film transistor (TFT) T12 to close, the 4th pull-up thin film transistor (TFT) T24 is opened, and CK2 becomes high potential, grade citation COUT (n)
Become high potential, therefore, Q point current potential is pulled to more high potential, is conducive to the 4th pull-up thin film transistor (TFT) T24 and opens.Simultaneously
Thin film transistor (TFT) T6, the 6th reversed reversed thin film transistor (TFT) T58 pipe opening of thin film transistor (TFT) T56 and the 8th are fed back, point F rises to height
Current potential advantageously reduces the second control thin film transistor (TFT) T12.5th maintains the electric leakage of thin film transistor (TFT) T45 and T32 pipe, maintains Q point
Current potential.P point is reduced to low potential.First maintains thin film transistor (TFT) T41 and second that thin film transistor (TFT) T42 is maintained to close, and N point is lifted
To high potential.Due to the presence of the second storage capacitance Cbt2, M point current potential is pulled to more high potential.First pull-up film crystal
The pull-up of pipe T21 and second thin film transistor (TFT) T22 is opened, and N point current potential and output signal are also gradually increased to high potential.
When the phase III: the first clock signal CK1 is upgraded to high potential, the first control thin film transistor (TFT) T11 and the second control
Thin film transistor (TFT) T12 is opened, and since the grade communication COUT (n-1) of upper level is low potential, Q point current potential is pulled low to low electricity
Position.4th pull-up thin film transistor (TFT) T24, the second reversed reversed thin film transistor (TFT) T54 of thin film transistor (TFT) T52 and the 4th are closed, QB
Point rises to high potential.Third maintains thin film transistor (TFT) T43, fourth dimension to hold thin film transistor (TFT) T44, the 5th maintenance thin film transistor (TFT)
T45 and 6 DOF hold thin film transistor (TFT) T46 opening, and grade communication COUT (n) is down to low potential.6th reversed thin film transistor (TFT)
The reversed thin film transistor (TFT) T58 of T56 and the 8th and feedback thin film transistor (TFT) T6 are closed, and P point is upgraded to high potential.First maintains film brilliant
Body pipe T41 and second maintains thin film transistor (TFT) T42 to open, and the grade communication COUT (n+1) of next stage is upgraded to high potential.T31 is beaten
It opens, grade communication number is reduced to low potential.
Driving circuit provided by the invention can raise the voltage of clock signal, so that electricity of the driving circuit in internal node
Pressure signal keeps exporting the high voltage for driving blue phase liquid crystal while lower voltage value, and driving circuit can be greatly lowered
Power consumption, and reduce the crosstalk between signal.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (14)
1. a kind of driving circuit for display screen, which is characterized in that the driving circuit includes:
Pull-up unit, the pull-up unit are used to clock signal being converted to a grade communication number, d. c. voltage signal be converted to defeated
Signal out；
Pull-up control unit, the pull-up control unit are used to control the opening time of the pull-up unit；
Bootstrap capacitor, the bootstrap capacitor is for being lifted the grade communication number and output signal voltage；
Drop-down unit, the drop-down unit are used for the output voltage of bootstrap capacitor down for low potential；
Maintenance unit is pulled down, the drop-down maintenance unit is used to the output voltage drawing of bootstrap capacitor remaining low potential；
Phase inverter, the phase inverter are used to make the output voltage of the bootstrap capacitor and the output voltage current potential of drop-down maintenance unit
On the contrary；And
Feedback unit, the feedback unit are used to improve the output voltage of drop-down unit.
2. driving circuit according to claim 1, which is characterized in that the pull-up unit includes the first pull-up unit and the
Two pull-up units；
First pull-up unit includes that the first pull-up thin film transistor (TFT), the second pull-up thin film transistor (TFT) and third pull-up film are brilliant
Body pipe；Wherein,
The source electrode of the first pull-up thin film transistor (TFT) connects the first DC voltage, and drain electrode connects the drop-down unit, and grid connects
Connect the drain electrode of the grid and third pull-up thin film transistor (TFT) of the second pull-up thin film transistor (TFT)；
The source electrode of the second pull-up thin film transistor (TFT) connects the first DC voltage, and drain electrode connects a pole of the bootstrap capacitor
Plate；
The source electrode of the third pull-up thin film transistor (TFT) connects the second DC voltage, and grid connects the grade communication number of upper level, leakage
Pole connects another pole plate of the bootstrap capacitor；
Second pull-up unit includes the 4th pull-up thin film transistor (TFT), the source electrode connection the of the 4th pull-up thin film transistor (TFT)
Two clock signals, grid connect the bootstrap capacitor, drain electrode connection third DC voltage.
3. driving circuit according to claim 2, which is characterized in that the first pull-up thin film transistor (TFT) and third pull-up
Thin film transistor (TFT) is N-type TFT, and the second pull-up thin film transistor (TFT) and the 4th pull-up thin film transistor (TFT) are p-type film
Transistor.
4. driving circuit according to claim 2, which is characterized in that the pull-up control unit includes the first control film
Transistor and the second control thin film transistor (TFT)；Wherein,
The grade communication number of the source electrode connection upper level of the first control thin film transistor (TFT), grid connect the first clock signal, leakage
Pole connects the source electrode of the second control thin film transistor (TFT)；
The grid of the second control thin film transistor (TFT) connects first clock signal, and drain electrode connects the drop-down and remains single
Member.
5. driving circuit according to claim 2, which is characterized in that the first control thin film transistor (TFT) and the second control
Thin film transistor (TFT) is N-type TFT.
6. driving circuit according to claim 4, which is characterized in that the drop-down unit includes the first drop-down unit and the
Two drop-down units；Wherein,
First drop-down unit includes the first pull-down thin film, and the source electrode of first pull-down thin film connects institute
The first pull-up unit is stated, grid connects the grade communication number of next stage, and drain electrode connects the third DC voltage；
Second drop-down unit includes the second pull-down thin film and third pull-down thin film；
The source electrode of second pull-down thin film connects the bootstrap capacitor, and grid connects the grade communication number of next stage, leakage
Pole connects the source electrode of the third pull-down thin film；
The grade communication number of the grid connection next stage of the third pull-down thin film, drain electrode connect the third direct current
Pressure.
7. driving circuit according to claim 6, which is characterized in that first pull-down thin film and third drop-down
Thin film transistor (TFT) is N-type TFT, and second pull-down thin film is P-type TFT.
8. driving circuit according to claim 6, which is characterized in that the drop-down maintenance unit includes that the first drop-down maintains
Unit and the second drop-down maintenance unit；Wherein,
The first drop-down maintenance unit includes that the first maintenance thin film transistor (TFT), the second maintenance thin film transistor (TFT) and third remain thin
Film transistor；
Described first maintains the source electrode of thin film transistor (TFT) to connect first pull-up unit, and grid connection described second maintains film
The grid of transistor, drain electrode connect the third DC voltage；
Described second maintains the source electrode of thin film transistor (TFT) to connect second pull-up unit, and drain electrode connects the third direct current
Pressure；
The third maintains the source electrode of thin film transistor (TFT) to connect the bootstrap capacitor, and drain electrode connects the third DC voltage；
The second drop-down maintenance unit includes that the 5th maintenance thin film transistor (TFT) and 6 DOF hold thin film transistor (TFT)；
Described 5th maintains the source electrode of thin film transistor (TFT) to connect the pull-up control unit, and grid connects the phase inverter, drain electrode
Connect the source electrode that the 6 DOF holds thin film transistor (TFT)；
The grid that the 6 DOF holds thin film transistor (TFT) connects the phase inverter, and drain electrode connects the third DC voltage.
9. driving circuit according to claim 8, which is characterized in that described first maintains thin film transistor (TFT) and third to maintain
It is N-type TFT that thin film transistor (TFT), the 5th maintenance thin film transistor (TFT) and 6 DOF, which hold thin film transistor (TFT), and described second maintains
Thin film transistor (TFT) is P-type TFT.
10. driving circuit according to claim 8, which is characterized in that the phase inverter includes the first phase inverter and second
Phase inverter；Wherein,
First phase inverter includes the first reversed thin film transistor (TFT), the second reversed thin film transistor (TFT), the reversed film crystal of third
Pipe and the 4th reversed thin film transistor (TFT)；
The source electrode of the first reversed thin film transistor (TFT) connects second drop-down unit with grid, and drain electrode connection described second is anti-
To the source electrode of thin film transistor (TFT)；
The grid of the second reversed thin film transistor (TFT) connects second drop-down unit, and drain electrode connects the third direct current
Pressure；
The source electrode of the reversed thin film transistor (TFT) of third connects second drop-down unit, and grid connects the first reversed film
The drain electrode of transistor, drain electrode connect the source electrode of the 4th reversed thin film transistor (TFT)；
The grid of the 4th reversed thin film transistor (TFT) connects the grid of the described second reversed thin film transistor (TFT), drains described in connection
Third DC voltage；
Second phase inverter includes the 5th reversed thin film transistor (TFT), the 6th reversed thin film transistor (TFT), the 7th reversed film crystal
Pipe and the 8th reversed thin film transistor (TFT)；
The grid of the 5th reversed thin film transistor (TFT) connects the feedback unit with source electrode, and drain electrode connection the described 6th is reversed thin
The source electrode of film transistor；
The grid of the 6th reversed thin film transistor (TFT) connects second pull-up unit, and drain electrode connects the third direct current
Pressure；
The source electrode of the 7th reversed thin film transistor (TFT) connects the feedback unit, and grid connects the 5th reversed film crystal
The drain electrode of pipe, drain electrode connect the source electrode of the 8th reversed thin film transistor (TFT)；
The grid of the 8th reversed thin film transistor (TFT) connects the grid of the 6th reversed thin film transistor (TFT), drains described in connection
Third DC voltage.
11. driving circuit according to claim 10, which is characterized in that the first reversed thin film transistor (TFT), third are anti-
It is anti-to thin film transistor (TFT), the 4th reversed thin film transistor (TFT), the 5th reversed thin film transistor (TFT), the 7th reversed thin film transistor (TFT) and the 8th
It is N-type TFT to thin film transistor (TFT)；The second reversed thin film transistor (TFT) and the 6th reversed thin film transistor (TFT) are that p-type is thin
Film transistor.
12. driving circuit according to claim 10, which is characterized in that the feedback unit includes feedback film crystal
The source electrode of pipe, the feedback thin film transistor (TFT) connects first pull-up unit, and drain electrode connects the pull-up control unit, grid
Connect the grade communication number of the same level.
13. driving circuit according to claim 10, which is characterized in that the feedback thin film transistor (TFT) is that N-type film is brilliant
Body pipe.
14. driving circuit according to claim 12, which is characterized in that the bootstrap capacitor include the first storage capacitance and
Second storage capacitance；Wherein,
One pole plate of first storage capacitance connects first pull-up unit, another pole plate connects the drop-down and maintains
Unit；
One pole plate of second storage capacitance connects second pull-up unit, another pole plate connection second drop-down
Unit.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910382521.0A CN110223648B (en) | 2019-05-09 | 2019-05-09 | Driving circuit for display screen |
| PCT/CN2019/102963 WO2020224110A1 (en) | 2019-05-09 | 2019-08-28 | Driving circuit for display screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910382521.0A CN110223648B (en) | 2019-05-09 | 2019-05-09 | Driving circuit for display screen |
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| CN110223648B CN110223648B (en) | 2020-07-10 |
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| WO (1) | WO2020224110A1 (en) |
Cited By (1)
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| Publication number | Publication date |
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| WO2020224110A1 (en) | 2020-11-12 |
| CN110223648B (en) | 2020-07-10 |
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