CN110222836A - Numerical model analysis nerve synapse circuit - Google Patents
Numerical model analysis nerve synapse circuit Download PDFInfo
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- CN110222836A CN110222836A CN201910610459.6A CN201910610459A CN110222836A CN 110222836 A CN110222836 A CN 110222836A CN 201910610459 A CN201910610459 A CN 201910610459A CN 110222836 A CN110222836 A CN 110222836A
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- 210000000225 synapse Anatomy 0.000 title claims abstract description 69
- 238000004458 analytical method Methods 0.000 title claims abstract description 24
- 210000005036 nerve Anatomy 0.000 title claims abstract description 24
- 210000002569 neuron Anatomy 0.000 claims abstract description 17
- 239000003990 capacitor Substances 0.000 claims description 30
- 230000002964 excitative effect Effects 0.000 claims description 22
- 230000002401 inhibitory effect Effects 0.000 claims description 18
- 230000003956 synaptic plasticity Effects 0.000 claims description 15
- 230000005611 electricity Effects 0.000 claims description 14
- 238000004088 simulation Methods 0.000 claims description 4
- 210000004556 brain Anatomy 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000036982 action potential Effects 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000036749 excitatory postsynaptic potential Effects 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001242 postsynaptic effect Effects 0.000 description 2
- 240000002627 Cordeauxia edulis Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002490 cerebral effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000036734 inhibitory postsynaptic potential Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000001537 neural effect Effects 0.000 description 1
- 230000004751 neurological system process Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
Abstract
The invention discloses a kind of numerical model analysis nerve synapse circuits; including micro processor, apparatus, analog module and restructural electric resistance array; the input terminal of the analog module is the signal input part of the Sudden-touch circuit; the output end of the analog module is connect with the end R+ of the restructural electric resistance array, and the analog module is used to export forward current to restructural electric resistance array or exports negative current to restructural electric resistance array；The end R- of the restructural electric resistance array is connect with the output end of the Sudden-touch circuit, the control terminal of the restructural electric resistance array is connect with the control output end of the microcontroller device, the restructural electric resistance array characterizes the bonding strength between biological neuron for playing the role of current limliting.The Sudden-touch circuit not only can realize the accurate on-line control of synapse weight resistance by microcontroller, but also the plastic rule of software definition may be implemented.
Description
Technical field
The present invention relates to the neuromorphic field of engineering technology that mimic biology neuroid realizes artificial intelligence, especially relate to
And a kind of numerical model analysis nerve synapse circuit.
Background technique
The realization of organism brain intelligence is based primarily upon the complex network of a large amount of neuron and nerve synapse composition.Neural process
Touching is the bridge for connecting neuron and transmission signal, and synaptic plasticity refers to that the efficiency of cynapse transmission signal is alterable
Property, be the basis of organism learning and memory.A large number of studies show that the synaptic plasticity of neuron includes function plasticity
And structure plasticity.With the development of class brain intelligence, people use large scale integrated circuit system (neuromorphic engineering system)
Biological brain structure and the information processing function are simulated, it is expected that on the one hand passing through massive parallelism, low-power consumption, the Gao Lu of simulation brain
The characteristics such as stick and on-line study, realize stronger artificial intelligence；On the other hand passed through using the neuromorphic system of realization
Reverse-engineering explores the working mechanism of biological brain, unlocks the secret of biological intelligence.Therefore, with circuit analog neuron cynapse
Characteristic and function are the key links for constructing neuromorphic system.However, existing Sudden-touch circuit cannot reflect biology well
The deformability characteristics of nerve synapse.
Summary of the invention
The technical problem to be solved by the present invention is to how provide one kind the accurate online of synapse weight not only may be implemented
It adjusts, and the numerical model analysis nerve synapse circuit of a variety of plasticity rules of software definition may be implemented.
In order to solve the above technical problems, the technical solution used in the present invention is: a kind of numerical model analysis nerve synapse circuit,
It is characterized by comprising micro processor, apparatus, analog module and restructural electric resistance array, the analog module
Input terminal is the signal input part of the Sudden-touch circuit, the output end of the analog module and the restructural electric resistance array
The connection of the end R+, the analog module is used to export forward current to restructural electric resistance array or to restructural electric resistance array
Export negative current；The end R- of the restructural electric resistance array is connect with the output end of the Sudden-touch circuit, the restructural electricity
The control terminal of resistance array is connect with the control output end of the microcontroller device, and the restructural electric resistance array is for playing limit
The effect of stream characterizes the bonding strength between biological neuron；Microcontroller device is used to run different synaptic plasticities
Rule changes the resistance value size of restructural electric resistance array, to realize adjusting Sudden-touch circuit then according to synaptic plasticity rule
Weight.
A further technical solution lies in: the microcontroller device includes micro controller module and shift register mould
Block, the microcontroller device provide working power by power module for it, and the control signal of the micro controller module is defeated
Outlet is connect with the input terminal of the shift register module, and the micro controller module is controlled by shift register to be weighed
Relay is cut-off in structure electric resistance array, realizes the adjustment to the restructural electric resistance array resistance value, and then realize and adjust cynapse
The purpose of circuit weight.
Preferably, the micro controller module includes ARM or single-chip microcontroller, and the micro controller module can monitor described simultaneously
The input terminal and output end of numerical model analysis nerve synapse circuit, the plastic rule of the cynapse according to defined in microcontroller are completed
The synaptic plasticity of biology is simulated in modulation to restructural electric resistance array resistance value.
A further technical solution lies in: the microcontroller device further includes display module, the display module and institute
The output end connection for stating micro controller module, for showing the resistance of restructural electric resistance array in current digital-to-analogue mixed synapse circuit
Value.
A further technical solution lies in: the analog module is excitatory synapse analog module or inhibition
Sudden-touch circuit module.
A further technical solution lies in: the excitatory synapse analog module includes diode D1, resistance R1-
R4, capacitor C1, diode Q1-Q2 and voltage source V1, the input terminal of the excitatory synapse analog module and described two
The cathode connection of the anode connection of pole pipe D1, the diode D1 is connect with one end of resistance R1, the other end of the resistance R1
It is divided into three tunnels, the first via is grounded through capacitor C1, and the second tunnel is grounded through resistance R2, and third road is connect with the base stage of triode Q1, and three
The emitter of pole pipe Q1 is grounded through resistance R3, and the collector of triode Q1 is connect with the base stage of triode Q2, the hair of triode Q2
Emitter-base bandgap grading is connect through resistance R4 with the anode of voltage source V1, the cathode ground connection of the voltage source V1, the collector of triode Q2 and institute
State the output end connection of excitatory synapse analog module；
Excitatory synapse analog circuit input terminal receives neuron output action pulse signal, is limited by diode D1 through resistance R1
Stream charges to capacitor C1, while the slow leakage current of resistance R2, the charging rate of capacitor C1 is controlled, when capacitor C1 both end voltage is big
When the cut-in voltage of triode Q1, triode Q1 and triode Q2 conducting, excitatory synapse analog circuit output end are exported just
To electric current.
A further technical solution lies in: the inhibitory synapse circuit module includes resistance R5-R6, capacitor C2, two poles
Pipe D2, triode Q3 and voltage source V2, the input terminal of the inhibitory synapse circuit module are connect with the anode of diode D2,
The cathode of the diode D2 is connect with one end of resistance R5, and the other end of the resistance R5 is divided into three tunnels, and the first via is through capacitor
C2 ground connection, the second tunnel are grounded through resistance R6, and third road is connect with the base stage of triode Q3, the emitter and voltage source of triode Q3
The cathode of V2 connects, the plus earth of voltage source V2, and the collector of triode Q3 is defeated with the inhibitory synapse circuit module
Outlet connection；
The inhibitory synapse analog circuit input terminal receives neuron output action pulse signal, by diode D2 through resistance
R5 current limliting charges to capacitor C2, while the slow leakage current of resistance R6, controls the charging rate of capacitor C2, when the both ends capacitor C2 electricity
When pressure is greater than the cut-in voltage of triode Q3, triode Q3 conducting, electric current is flowed into the collector of triode Q1 by output end, that is, pressed down
Property cynapse analog circuit output end processed exports negative current.
A further technical solution lies in: the restructural electric resistance array includes 28 relays and 28 resistance, described
The end R+ of restructural electric resistance array is divided into two-way, the first via through 1 Ohmic resistance in relay K11 single-pole double-throw switch (SPDT) it is public
Terminals connection, the second tunnel is connect with a tap line end of single-pole double-throw switch (SPDT) in the relay K11；In relay K11
The first via of the common terminal of single-pole double-throw switch (SPDT) is through 10 Ohmic resistances and one point of single-pole double-throw switch (SPDT) in relay K21
Terminals connect, and the second tunnel of the common terminal of single-pole double-throw switch (SPDT) is opened with single-pole double throw in relay K21 in relay K11
The common terminal of pass connects；In relay K21 the first via of the common terminal of single-pole double-throw switch (SPDT) through 100 Ohmic resistances with
A tap line end of single-pole double-throw switch (SPDT) connects in relay K31, the common terminal of single-pole double-throw switch (SPDT) in relay K21
The second tunnel connect with the common terminal of single-pole double-throw switch (SPDT) in relay K31；The public affairs of single-pole double-throw switch (SPDT) in relay K31
The first via of terminals is connect through 1K Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K41 altogether, relay
The common terminal on the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and single-pole double-throw switch (SPDT) in relay K41 in device K31
Connection；The first via of the common terminal of single-pole double-throw switch (SPDT) is through single in 10K Ohmic resistance and relay K51 in relay K41
One tap line end of double-pole double throw switch connects, the second Lu Yuji of the common terminal of single-pole double-throw switch (SPDT) in relay K41
The common terminal connection of single-pole double-throw switch (SPDT) in electric appliance K51；The of the common terminal of single-pole double-throw switch (SPDT) in relay K51
It is connect all the way through 100K Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K61, hilted broadsword in relay K51
Second tunnel of the common terminal of commutator is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K61；Relay
The first via of the common terminal of single-pole double-throw switch (SPDT) is through single-pole double-throw switch (SPDT) in 1M Ohmic resistance and relay K71 in K61
One tap line end connects, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and hilted broadsword in relay K71 in relay K61
The common terminal of commutator connects；
The first via of the common terminal of single-pole double-throw switch (SPDT) is through hilted broadsword in 2M Ohmic resistance and relay K72 in relay K71
One tap line end of commutator connects, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and relay in relay K71
The common terminal connection of single-pole double-throw switch (SPDT) in device K72；The first of the common terminal of single-pole double-throw switch (SPDT) in relay K72
Road is connect through 200K Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K62, and hilted broadsword is double in relay K72
Second tunnel of the common terminal of throw switch is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K62；Relay K62
The first via of the common terminal of middle single-pole double-throw switch (SPDT) is through 20K Ohmic resistance and one of single-pole double-throw switch (SPDT) in relay K52
A tap line end connects, and the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and hilted broadsword in relay K52 are double in relay K62
The common terminal of throw switch connects；The first via of the common terminal of single-pole double-throw switch (SPDT) is through 2K ohm of electricity in relay K52
Resistance is connect with a tap line end of single-pole double-throw switch (SPDT) in relay K42, and the public of single-pole double-throw switch (SPDT) connects in relay K52
Second tunnel of line end is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K42；Single-pole double-throw switch (SPDT) in relay K42
The first via of common terminal connect through 200 Ohmic resistances with a tap line end of single-pole double-throw switch (SPDT) in relay K32,
The second tunnel of the common terminal of single-pole double-throw switch (SPDT) connects with the public of single-pole double-throw switch (SPDT) in relay K32 in relay K42
Line end connection；The first via of the common terminal of single-pole double-throw switch (SPDT) is through in 20 Ohmic resistances and relay K22 in relay K32
One tap line end of single-pole double-throw switch (SPDT) connects, in relay K32 the second tunnel of the common terminal of single-pole double-throw switch (SPDT) with
The common terminal connection of single-pole double-throw switch (SPDT) in relay K22；The common terminal of single-pole double-throw switch (SPDT) in relay K22
The first via is connect through 2 Ohmic resistances with a tap line end of single-pole double-throw switch (SPDT) in relay K12, hilted broadsword in relay K22
Second tunnel of the common terminal of commutator is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K12；
The first via of the common terminal of single-pole double-throw switch (SPDT) is double through hilted broadsword in 3 Ohmic resistances and relay K13 in relay K12
One common terminal of throw switch connects, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and relay in relay K12
The tap line end connection of single-pole double-throw switch (SPDT) in device K12；The of the common terminal of single-pole double-throw switch (SPDT) in relay K13
It is connect all the way through 30 Ohmic resistances with a tap line end of single-pole double-throw switch (SPDT) in relay K23, hilted broadsword is double in relay K13
Second tunnel of the common terminal of throw switch is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K23；Relay K23
The first via of the common terminal of middle single-pole double-throw switch (SPDT) is through 300 Ohmic resistances and one of single-pole double-throw switch (SPDT) in relay K33
A tap line end connects, and the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and hilted broadsword in relay K33 are double in relay K23
The common terminal of throw switch connects；The first via of the common terminal of single-pole double-throw switch (SPDT) is through 3K ohm of electricity in relay K33
Resistance is connect with a tap line end of single-pole double-throw switch (SPDT) in relay K43, and the public of single-pole double-throw switch (SPDT) connects in relay K33
Second tunnel of line end is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K43；Single-pole double-throw switch (SPDT) in relay K43
The first via of common terminal connect through 30K Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K53,
The second tunnel of the common terminal of single-pole double-throw switch (SPDT) connects with the public of single-pole double-throw switch (SPDT) in relay K53 in relay K43
Line end connection；The first via of the common terminal of single-pole double-throw switch (SPDT) is through 300K Ohmic resistance and relay K63 in relay K53
One tap line end of middle single-pole double-throw switch (SPDT) connects, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) in relay K53
It is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K63；The common terminal of single-pole double-throw switch (SPDT) in relay K63
The first via connect through 3M Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K73, it is single in relay K63
Second tunnel of the common terminal of double-pole double throw switch is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K73；
The first via of the common terminal of single-pole double-throw switch (SPDT) is through hilted broadsword in 4M Ohmic resistance and relay K74 in relay K73
The common terminal of commutator connects, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and relay in relay K73
The tap line end connection of single-pole double-throw switch (SPDT) in K74；The first of the common terminal of single-pole double-throw switch (SPDT) in relay K64
Road is connect through 4M Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K74, single-pole double throw in relay K64
Second tunnel of the common terminal of switch is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K74；In relay K54
The first via of the common terminal of single-pole double-throw switch (SPDT) is through 400K Ohmic resistance and one of single-pole double-throw switch (SPDT) in relay K64
Line end connection is tapped, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and single-pole double throw in relay K64 in relay K54
The common terminal of switch connects；The first via of the common terminal of single-pole double-throw switch (SPDT) is through 40K Ohmic resistance in relay K44
It is connect with a tap line end of single-pole double-throw switch (SPDT) in relay K54, the public wiring of single-pole double-throw switch (SPDT) in relay K44
Second tunnel at end is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K54；Single-pole double-throw switch (SPDT) in relay K34
The first via of common terminal is connect through 4K Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K44, after
The public wiring on the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and single-pole double-throw switch (SPDT) in relay K44 in electric appliance K34
End connection；The first via of the common terminal of single-pole double-throw switch (SPDT) is through in 400 Ohmic resistances and relay K34 in relay K24
One tap line end of single-pole double-throw switch (SPDT) connects, in relay K24 the second tunnel of the common terminal of single-pole double-throw switch (SPDT) with
The common terminal connection of single-pole double-throw switch (SPDT) in relay K34；The common terminal of single-pole double-throw switch (SPDT) in relay K14
The first via is connect through 40 Ohmic resistances with a tap line end of single-pole double-throw switch (SPDT) in relay K24, hilted broadsword in relay K14
Second tunnel of the common terminal of commutator is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K24；It is described can
The end R- of reconstruct electric resistance array is divided into two-way, tap wire of the first via through single-pole double-throw switch (SPDT) in 4 Ohmic resistances and relay K14
End connection, the second tunnel is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K14.
The beneficial effects of adopting the technical scheme are that the circuit provides base for realization neuromorphic system
Plinth unit can simulate the excitatory synapse of different plastic mechanisms and the electrology characteristic of inhibitory synapse, pass through micro-control molding
Block controls the relay in restructural electric resistance array, and the accurate on-line control of Sudden-touch circuit synapse weight may be implemented.The present invention
It is made of analog module and digital circuits section, one side artificial circuit part can guarantee the real-time of nerve signal process
Property, on the other hand, digital circuits section can realize software definition different plasticity rule, such as Hebb learning rules, it is long when
Journey plasticity regular (LTP/LTD), burst length rely on synaptic plasticity (STDP) etc., and the micro controller module can be simultaneously
The input terminal and output end of the numerical model analysis nerve synapse circuit are monitored, the cynapse according to software definition in microcontroller is plastic
Rule, changes the size of restructural electric resistance array resistance value, and simulation various biological practises mechanism.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1 is the schematic diagram of Sudden-touch circuit described in the embodiment of the present invention；
Fig. 2 is the schematic diagram of excitatory synapse analog module in Sudden-touch circuit described in the embodiment of the present invention；
Fig. 3 is the schematic diagram of inhibitory synapse analog module in Sudden-touch circuit described in the embodiment of the present invention；
Fig. 4 is the schematic diagram of restructural electric resistance array in Sudden-touch circuit described in the embodiment of the present invention；
Fig. 5 is the excitatory postsynaptic potential (EPSP) figure that excitatory synapse circuit generates in Sudden-touch circuit described in the embodiment of the present invention；
Fig. 6 is the inhibitory postsynaptic potential figure that inhibitory synapse circuit generates in Sudden-touch circuit described in the embodiment of the present invention.
Specific embodiment
With reference to the attached drawing in the embodiment of the present invention, technical solution in the embodiment of the present invention carries out clear, complete
Ground description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
As shown in Figure 1, the embodiment of the invention discloses a kind of numerical model analysis nerve synapse circuit, including microprocessor dress
It sets, analog module and restructural electric resistance array, the input terminal of the analog module are the letter of the Sudden-touch circuit
Number input terminal, the output end of the analog module are connect with the end R+ of the restructural electric resistance array, the analog circuit
Module is used to export forward current to restructural electric resistance array or exports negative current to restructural electric resistance array；It is described restructural
The end R- of electric resistance array is connect with the output end of the Sudden-touch circuit, the control terminal of the restructural electric resistance array and the micro-control
The control output end of device device processed connects, and the restructural electric resistance array characterizes biological neural for playing the role of current limliting
Bonding strength between member；Microcontroller device is used to run different synaptic plasticity rules, then according to synaptic plasticity
Rule, controls the resistance value size of restructural electric resistance array, adjusts Sudden-touch circuit weight to realize.
The control terminal of the restructural electric resistance array refers to the control terminal of relay in restructural electric resistance array, microcontroller
By controlling the switch and closure of relay, to realize the adjusting of restructural electric resistance array resistance value.
Further, as shown in Figure 1, the microcontroller device includes micro controller module and shift register mould
Block, it is preferred that the micro controller module includes ARM or single-chip microcontroller, and the micro controller module can monitor the digital-to-analogue simultaneously
The input terminal and output end of composite nerve Sudden-touch circuit, the plastic rule of the cynapse according to defined in microcontroller are completed to can
The synaptic plasticity of biology is simulated in the modulation for reconstructing electric resistance array resistance value.The microcontroller device passes through external power supply module
Working power, the input terminal of the control signal output of the micro controller module and the shift register module are provided for it
Connection, the micro controller module control cut-offfing for relay in restructural electric resistance array by shift register, realize pair
The adjustment of the restructural electric resistance array resistance value, and then realize the purpose for adjusting Sudden-touch circuit weight.Further, such as Fig. 1 institute
Showing, the microcontroller device further includes display module, and the display module is connect with the output end of the micro controller module,
For showing the resistance value of restructural electric resistance array in current digital-to-analogue mixed synapse circuit.
Further, the analog module is excitatory synapse analog module or inhibitory synapse circuit mould
Block.As indicated with 2, the excitatory synapse analog module includes diode D1, resistance R1-R4, capacitor C1, diode
Q1-Q2 and voltage source V1, the input terminal of the excitatory synapse analog module are connect with the anode of the diode D1,
The cathode connection of the diode D1 is connect with one end of resistance R1, and the other end of the resistance R1 is divided into three tunnels, first via warp
Capacitor C1 ground connection, the second tunnel are grounded through resistance R2, and third road is connect with the base stage of triode Q1, and the emitter of triode Q1 is through electricity
R3 ground connection is hindered, the collector of triode Q1 is connect with the base stage of triode Q2, and the emitter of triode Q2 is through resistance R4 and voltage
The anode connection of source V1, the cathode ground connection of the voltage source V1, the collector of triode Q2 and excitatory synapse simulation electricity
The output end of road module connects；
Excitatory synapse analog circuit input terminal receives neuron output action pulse signal, is limited by diode D1 through resistance R1
Stream charges to capacitor C1, while the slow leakage current of resistance R2, the charging rate of capacitor C1 is controlled, when capacitor C1 both end voltage is big
When the cut-in voltage of triode Q1, triode Q1 and triode Q2 conducting, excitatory synapse analog circuit output end are exported just
To electric current.
As shown in figure 3, the inhibitory synapse circuit module includes resistance R5-R6, capacitor C2, diode D2, triode
Q3 and voltage source V2, the input terminal of the inhibitory synapse circuit module are connect with the anode of diode D2, the diode
The cathode of D2 is connect with one end of resistance R5, and the other end of the resistance R5 is divided into three tunnels, and the first via is grounded through capacitor C2, and second
Road is grounded through resistance R6, and third road is connect with the base stage of triode Q3, and the emitter of triode Q3 and the cathode of voltage source V2 connect
It connects, the plus earth of voltage source V2, the collector of triode Q3 is connect with the output end of the inhibitory synapse circuit module；
The inhibitory synapse analog circuit input terminal receives neuron output action pulse signal, by diode D2 through resistance
R5 current limliting charges to capacitor C2, while the slow leakage current of resistance R6, controls the charging rate of capacitor C2, when the both ends capacitor C2 electricity
When pressure is greater than the cut-in voltage of triode Q3, triode Q3 conducting, electric current is flowed into the collector of triode Q1 by output end, that is, pressed down
Property cynapse analog circuit output end processed exports negative current.
As shown in figure 4, the output end of the end the R+ connection analog module of restructural electric resistance array, restructural electric resistance array
The end R- be connected with micro controller module, the output end of the nerve synapse circuit as numerical model analysis a kind of in Fig. 1.Restructural electricity
The electric resistance array that resistance array is made of 28 relays (Kij) and 28 resistance, passes through the shifted deposit of micro controller module
Device control relay is cut-off, to realize the adjusting of restructural electric resistance array resistance value.The resistance value of restructural electric resistance array adjusts model
It encloses for the Ω of 0 Ω ~ 11111110, the resolution ratio of resistance value is 1 Ω.If the resistance value of resistance in restructural electric resistance array is accordingly reduced one
A order of magnitude, then the resistance value resolution ratio of restructural electric resistance array then becomes 0.1 Ω.
Specifically, as shown in figure 4, the restructural electric resistance array include 28 relays and 28 resistance, it is described to weigh
The end R+ of structure electric resistance array is divided into two-way, public wiring of the first via through single-pole double-throw switch (SPDT) in 1 Ohmic resistance and relay K11
End connection, the second tunnel is connect with a tap line end of single-pole double-throw switch (SPDT) in the relay K11；Hilted broadsword in relay K11
A tap wire of the first via of the common terminal of commutator through single-pole double-throw switch (SPDT) in 10 Ohmic resistances and relay K21
End connects, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and single-pole double-throw switch (SPDT) in relay K21 in relay K11
Common terminal connection；The first via of the common terminal of single-pole double-throw switch (SPDT) is through 100 Ohmic resistances and relay in relay K21
The tap line end connection of single-pole double-throw switch (SPDT) in device K31, the of the common terminal of single-pole double-throw switch (SPDT) in relay K21
Two tunnels are connect with the common terminal of single-pole double-throw switch (SPDT) in relay K31；The public of single-pole double-throw switch (SPDT) connects in relay K31
The first via of line end is connect through 1K Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K41, relay K31
Second tunnel of the common terminal of middle single-pole double-throw switch (SPDT) is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K41；
The first via of the common terminal of single-pole double-throw switch (SPDT) is through single-pole double throw in 10K Ohmic resistance and relay K51 in relay K41
One tap line end of switch connects, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and relay K51 in relay K41
The common terminal of middle single-pole double-throw switch (SPDT) connects；The first via warp of the common terminal of single-pole double-throw switch (SPDT) in relay K51
100K Ohmic resistance is connect with a tap line end of single-pole double-throw switch (SPDT) in relay K61, and single-pole double throw is opened in relay K51
Second tunnel of the common terminal of pass is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K61；It is single in relay K61
A tap of the first via of the common terminal of double-pole double throw switch through single-pole double-throw switch (SPDT) in 1M Ohmic resistance and relay K71
Line end connects, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and single-pole double-throw switch (SPDT) in relay K71 in relay K61
Common terminal connection；
The first via of the common terminal of single-pole double-throw switch (SPDT) is through hilted broadsword in 2M Ohmic resistance and relay K72 in relay K71
One tap line end of commutator connects, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and relay in relay K71
The common terminal connection of single-pole double-throw switch (SPDT) in device K72；The first of the common terminal of single-pole double-throw switch (SPDT) in relay K72
Road is connect through 200K Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K62, and hilted broadsword is double in relay K72
Second tunnel of the common terminal of throw switch is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K62；Relay K62
The first via of the common terminal of middle single-pole double-throw switch (SPDT) is through 20K Ohmic resistance and one of single-pole double-throw switch (SPDT) in relay K52
A tap line end connects, and the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and hilted broadsword in relay K52 are double in relay K62
The common terminal of throw switch connects；The first via of the common terminal of single-pole double-throw switch (SPDT) is through 2K ohm of electricity in relay K52
Resistance is connect with a tap line end of single-pole double-throw switch (SPDT) in relay K42, and the public of single-pole double-throw switch (SPDT) connects in relay K52
Second tunnel of line end is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K42；Single-pole double-throw switch (SPDT) in relay K42
The first via of common terminal connect through 200 Ohmic resistances with a tap line end of single-pole double-throw switch (SPDT) in relay K32,
The second tunnel of the common terminal of single-pole double-throw switch (SPDT) connects with the public of single-pole double-throw switch (SPDT) in relay K32 in relay K42
Line end connection；The first via of the common terminal of single-pole double-throw switch (SPDT) is through in 20 Ohmic resistances and relay K22 in relay K32
One tap line end of single-pole double-throw switch (SPDT) connects, in relay K32 the second tunnel of the common terminal of single-pole double-throw switch (SPDT) with
The common terminal connection of single-pole double-throw switch (SPDT) in relay K22；The common terminal of single-pole double-throw switch (SPDT) in relay K22
The first via is connect through 2 Ohmic resistances with a tap line end of single-pole double-throw switch (SPDT) in relay K12, hilted broadsword in relay K22
Second tunnel of the common terminal of commutator is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K12；
The first via of the common terminal of single-pole double-throw switch (SPDT) is double through hilted broadsword in 3 Ohmic resistances and relay K13 in relay K12
One common terminal of throw switch connects, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and relay in relay K12
The tap line end connection of single-pole double-throw switch (SPDT) in device K12；The of the common terminal of single-pole double-throw switch (SPDT) in relay K13
It is connect all the way through 30 Ohmic resistances with a tap line end of single-pole double-throw switch (SPDT) in relay K23, hilted broadsword is double in relay K13
Second tunnel of the common terminal of throw switch is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K23；Relay K23
The first via of the common terminal of middle single-pole double-throw switch (SPDT) is through 300 Ohmic resistances and one of single-pole double-throw switch (SPDT) in relay K33
A tap line end connects, and the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and hilted broadsword in relay K33 are double in relay K23
The common terminal of throw switch connects；The first via of the common terminal of single-pole double-throw switch (SPDT) is through 3K ohm of electricity in relay K33
Resistance is connect with a tap line end of single-pole double-throw switch (SPDT) in relay K43, and the public of single-pole double-throw switch (SPDT) connects in relay K33
Second tunnel of line end is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K43；Single-pole double-throw switch (SPDT) in relay K43
The first via of common terminal connect through 30K Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K53,
The second tunnel of the common terminal of single-pole double-throw switch (SPDT) connects with the public of single-pole double-throw switch (SPDT) in relay K53 in relay K43
Line end connection；The first via of the common terminal of single-pole double-throw switch (SPDT) is through 300K Ohmic resistance and relay K63 in relay K53
One tap line end of middle single-pole double-throw switch (SPDT) connects, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) in relay K53
It is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K63；The common terminal of single-pole double-throw switch (SPDT) in relay K63
The first via connect through 3M Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K73, it is single in relay K63
Second tunnel of the common terminal of double-pole double throw switch is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K73；
The first via of the common terminal of single-pole double-throw switch (SPDT) is through hilted broadsword in 4M Ohmic resistance and relay K74 in relay K73
The common terminal of commutator connects, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and relay in relay K73
The tap line end connection of single-pole double-throw switch (SPDT) in K74；The first of the common terminal of single-pole double-throw switch (SPDT) in relay K64
Road is connect through 4M Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K74, single-pole double throw in relay K64
Second tunnel of the common terminal of switch is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K74；In relay K54
The first via of the common terminal of single-pole double-throw switch (SPDT) is through 400K Ohmic resistance and one of single-pole double-throw switch (SPDT) in relay K64
Line end connection is tapped, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and single-pole double throw in relay K64 in relay K54
The common terminal of switch connects；The first via of the common terminal of single-pole double-throw switch (SPDT) is through 40K Ohmic resistance in relay K44
It is connect with a tap line end of single-pole double-throw switch (SPDT) in relay K54, the public wiring of single-pole double-throw switch (SPDT) in relay K44
Second tunnel at end is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K54；Single-pole double-throw switch (SPDT) in relay K34
The first via of common terminal is connect through 4K Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K44, after
The public wiring on the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and single-pole double-throw switch (SPDT) in relay K44 in electric appliance K34
End connection；The first via of the common terminal of single-pole double-throw switch (SPDT) is through in 400 Ohmic resistances and relay K34 in relay K24
One tap line end of single-pole double-throw switch (SPDT) connects, in relay K24 the second tunnel of the common terminal of single-pole double-throw switch (SPDT) with
The common terminal connection of single-pole double-throw switch (SPDT) in relay K34；The common terminal of single-pole double-throw switch (SPDT) in relay K14
The first via is connect through 40 Ohmic resistances with a tap line end of single-pole double-throw switch (SPDT) in relay K24, hilted broadsword in relay K14
Second tunnel of the common terminal of commutator is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K24；It is described can
The end R- of reconstruct electric resistance array is divided into two-way, tap wire of the first via through single-pole double-throw switch (SPDT) in 4 Ohmic resistances and relay K14
End connection, the second tunnel is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K14.
Restructural electric resistance array is equivalent to synapse weight in numerical model analysis Sudden-touch circuit, plays the role of current limliting, characterization
Bonding strength between biological neuron.If connection is excitatory synapse analog module, Fig. 1 is numerical model analysis
Excitatory synapse circuit, neuron circuit provides action potential after the electric current of output is conducive to Sudden-touch circuit, to generate emerging
Putting forth energy property postsynaptic potential, as shown in Figure 5.If connection is inhibitory synapse analog module, Fig. 1 is the suppression of numerical model analysis
Property Sudden-touch circuit processed, the electric current of output inhibits neuron circuit after Sudden-touch circuit to generate action potential, to generate inhibition
Postsynaptic potential, as shown in Figure 6.
For information transitive dependency between cerebral neuron in the structure of entitled " cynapse ", outstanding feature is synaptic plasticity.
Synaptic plasticity is embodied in restructural electric resistance array resistance value according to microcontroller in numerical model analysis Sudden-touch circuit of the present invention
The characteristic of the plastic rule variation of cynapse defined in device.The rule can be short term plasticity rule, Long-term plasticity
Rule, burst length rely on synaptic plasticity (STDP) learning rules etc..
Claims (8)
1. a kind of numerical model analysis nerve synapse circuit, it is characterised in that: including micro processor, apparatus, analog module and can
Electric resistance array is reconstructed, the input terminal of the analog module is the signal input part of the Sudden-touch circuit, the analog circuit
The output end of module is connect with the end R+ of the restructural electric resistance array, and the analog module is used for restructural Resistor Array Projector
Column output forward current exports negative current to restructural electric resistance array；It dashes forward with described at the end R- of the restructural electric resistance array
The output end connection on electric shock road, the control terminal of the restructural electric resistance array and the control output end of the microcontroller device connect
It connects, the restructural electric resistance array characterizes the bonding strength between biological neuron for playing the role of current limliting；Microcontroller
Device device is used to run different synaptic plasticity rules and changes restructural electric resistance array then according to synaptic plasticity rule
Resistance value size, thus realize adjust Sudden-touch circuit weight.
2. numerical model analysis nerve synapse circuit as described in claim 1, it is characterised in that: the microcontroller device includes micro-
Controller module and shift register module, the microcontroller device provide work electricity by external power supply module for it
Source, the control signal output of the micro controller module are connect with the input terminal of the shift register module, the micro-control
Device module processed controls cut-offfing for relay in restructural electric resistance array by shift register, realizes to the restructural resistance
The adjustment of array resistance value, and then realize the purpose for adjusting Sudden-touch circuit weight.
3. numerical model analysis nerve synapse circuit as claimed in claim 2, it is characterised in that: the micro controller module includes
ARM or single-chip microcontroller, the micro controller module can monitor input terminal and the output of the numerical model analysis nerve synapse circuit simultaneously
The voltage at end, the plastic rule of the cynapse according to defined in microcontroller complete the adjustment to restructural electric resistance array resistance value, mould
Intend the synaptic plasticity of biology.
4. numerical model analysis nerve synapse circuit as claimed in claim 2, it is characterised in that: the microcontroller device further includes
Display module, the display module are connect with the output end of the micro controller module, for showing current digital-to-analogue mixed synapse
The voltage of the input terminal and output end of the resistance value of restructural electric resistance array and the numerical model analysis nerve synapse circuit in circuit.
5. numerical model analysis nerve synapse circuit as described in claim 1, it is characterised in that: the analog module is excitement
Property cynapse analog module or inhibitory synapse circuit module.
6. numerical model analysis nerve synapse circuit as claimed in claim 5, it is characterised in that: the excitatory synapse analog circuit
Module includes diode D1, resistance R1-R4, capacitor C1, diode Q1-Q2 and voltage source V1, the excitatory synapse simulation
The input terminal of circuit module is connect with the anode of the diode D1, one end of the cathode connection and resistance R1 of the diode D1
Connection, the other end of the resistance R1 are divided into three tunnels, and the first via is grounded through capacitor C1, and the second tunnel is grounded through resistance R2, third road
It is connect with the base stage of triode Q1, the emitter of triode Q1 is grounded through resistance R3, the collector and triode Q2 of triode Q1
Base stage connection, the emitter of triode Q2 connect through resistance R4 with the positive of voltage source V1, and the cathode of the voltage source V1 connects
Ground, the collector of triode Q2 are connect with the output end of the excitatory synapse analog module；
Excitatory synapse analog circuit input terminal receives neuron output action pulse signal, is limited by diode D1 through resistance R1
Stream charges to capacitor C1, while the slow leakage current of resistance R2, the charging rate of capacitor C1 is controlled, when capacitor C1 both end voltage is big
When the cut-in voltage of triode Q1, triode Q1 and triode Q2 conducting, excitatory synapse analog circuit output end are exported just
To electric current.
7. numerical model analysis nerve synapse circuit as claimed in claim 5, it is characterised in that: the inhibitory synapse circuit module
Including resistance R5-R6, capacitor C2, diode D2, triode Q3 and voltage source V2, the inhibitory synapse circuit module it is defeated
Enter end to connect with the anode of diode D2, the cathode of the diode D2 is connect with one end of resistance R5, and the resistance R5's is another
One end is divided into three tunnels, and the first via is grounded through capacitor C2, and the second tunnel is grounded through resistance R6, and the base stage of third road and triode Q3 connect
Connect, the emitter of triode Q3 is connect with the cathode of voltage source V2, the plus earth of voltage source V2, the collector of triode Q3 with
The output end of the inhibitory synapse circuit module connects；
The inhibitory synapse analog circuit input terminal receives neuron output action pulse signal, by diode D2 through resistance
R5 current limliting charges to capacitor C2, while the slow leakage current of resistance R6, controls the charging rate of capacitor C2, when the both ends capacitor C2 electricity
When pressure is greater than the cut-in voltage of triode Q3, triode Q3 conducting, electric current is flowed into the collector of triode Q1 by output end, that is, pressed down
Property cynapse analog circuit output end processed exports negative current.
8. numerical model analysis nerve synapse circuit as described in claim 1, it is characterised in that: the restructural electric resistance array includes
28 relays and 28 resistance, the end R+ of the restructural electric resistance array are divided into two-way, and the first via is through 1 Ohmic resistance and relay
One of single-pole double-throw switch (SPDT) in the common terminal connection of single-pole double-throw switch (SPDT) in device K11, the second tunnel and the relay K11
Tap line end connection；The first via of the common terminal of single-pole double-throw switch (SPDT) is through 10 Ohmic resistances and relay in relay K11
A tap line end of single-pole double-throw switch (SPDT) connects in K21, the second of the common terminal of single-pole double-throw switch (SPDT) in relay K11
Road is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K21；The public wiring of single-pole double-throw switch (SPDT) in relay K21
The first via at end is connect through 100 Ohmic resistances with a tap line end of single-pole double-throw switch (SPDT) in relay K31, relay K21
Second tunnel of the common terminal of middle single-pole double-throw switch (SPDT) is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K31；
The first via of the common terminal of single-pole double-throw switch (SPDT) is through single-pole double throw in 1K Ohmic resistance and relay K41 in relay K31
One tap line end of switch connects, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and relay K41 in relay K31
The common terminal of middle single-pole double-throw switch (SPDT) connects；The first via warp of the common terminal of single-pole double-throw switch (SPDT) in relay K41
10K Ohmic resistance is connect with a tap line end of single-pole double-throw switch (SPDT) in relay K51, and single-pole double throw is opened in relay K41
Second tunnel of the common terminal of pass is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K51；It is single in relay K51
The first via of the common terminal of double-pole double throw switch is through 100K Ohmic resistance and one point of single-pole double-throw switch (SPDT) in relay K61
Terminals connect, and the second tunnel of the common terminal of single-pole double-throw switch (SPDT) is opened with single-pole double throw in relay K61 in relay K51
The common terminal of pass connects；In relay K61 the first via of the common terminal of single-pole double-throw switch (SPDT) through 1M Ohmic resistance with
A tap line end of single-pole double-throw switch (SPDT) connects in relay K71, the common terminal of single-pole double-throw switch (SPDT) in relay K61
The second tunnel connect with the common terminal of single-pole double-throw switch (SPDT) in relay K71；
The first via of the common terminal of single-pole double-throw switch (SPDT) is through hilted broadsword in 2M Ohmic resistance and relay K72 in relay K71
One tap line end of commutator connects, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and relay in relay K71
The common terminal connection of single-pole double-throw switch (SPDT) in device K72；The first of the common terminal of single-pole double-throw switch (SPDT) in relay K72
Road is connect through 200K Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K62, and hilted broadsword is double in relay K72
Second tunnel of the common terminal of throw switch is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K62；Relay K62
The first via of the common terminal of middle single-pole double-throw switch (SPDT) is through 20K Ohmic resistance and one of single-pole double-throw switch (SPDT) in relay K52
A tap line end connects, and the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and hilted broadsword in relay K52 are double in relay K62
The common terminal of throw switch connects；The first via of the common terminal of single-pole double-throw switch (SPDT) is through 2K ohm of electricity in relay K52
Resistance is connect with a tap line end of single-pole double-throw switch (SPDT) in relay K42, and the public of single-pole double-throw switch (SPDT) connects in relay K52
Second tunnel of line end is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K42；Single-pole double-throw switch (SPDT) in relay K42
The first via of common terminal connect through 200 Ohmic resistances with a tap line end of single-pole double-throw switch (SPDT) in relay K32,
The second tunnel of the common terminal of single-pole double-throw switch (SPDT) connects with the public of single-pole double-throw switch (SPDT) in relay K32 in relay K42
Line end connection；The first via of the common terminal of single-pole double-throw switch (SPDT) is through in 20 Ohmic resistances and relay K22 in relay K32
One tap line end of single-pole double-throw switch (SPDT) connects, in relay K32 the second tunnel of the common terminal of single-pole double-throw switch (SPDT) with
The common terminal connection of single-pole double-throw switch (SPDT) in relay K22；The common terminal of single-pole double-throw switch (SPDT) in relay K22
The first via is connect through 2 Ohmic resistances with a tap line end of single-pole double-throw switch (SPDT) in relay K12, hilted broadsword in relay K22
Second tunnel of the common terminal of commutator is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K12；
The first via of the common terminal of single-pole double-throw switch (SPDT) is double through hilted broadsword in 3 Ohmic resistances and relay K13 in relay K12
One common terminal of throw switch connects, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and relay in relay K12
The tap line end connection of single-pole double-throw switch (SPDT) in device K12；The of the common terminal of single-pole double-throw switch (SPDT) in relay K13
It is connect all the way through 30 Ohmic resistances with a tap line end of single-pole double-throw switch (SPDT) in relay K23, hilted broadsword is double in relay K13
Second tunnel of the common terminal of throw switch is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K23；Relay K23
The first via of the common terminal of middle single-pole double-throw switch (SPDT) is through 300 Ohmic resistances and one of single-pole double-throw switch (SPDT) in relay K33
A tap line end connects, and the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and hilted broadsword in relay K33 are double in relay K23
The common terminal of throw switch connects；The first via of the common terminal of single-pole double-throw switch (SPDT) is through 3K ohm of electricity in relay K33
Resistance is connect with a tap line end of single-pole double-throw switch (SPDT) in relay K43, and the public of single-pole double-throw switch (SPDT) connects in relay K33
Second tunnel of line end is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K43；Single-pole double-throw switch (SPDT) in relay K43
The first via of common terminal connect through 30K Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K53,
The second tunnel of the common terminal of single-pole double-throw switch (SPDT) connects with the public of single-pole double-throw switch (SPDT) in relay K53 in relay K43
Line end connection；The first via of the common terminal of single-pole double-throw switch (SPDT) is through 300K Ohmic resistance and relay K63 in relay K53
One tap line end of middle single-pole double-throw switch (SPDT) connects, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) in relay K53
It is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K63；The common terminal of single-pole double-throw switch (SPDT) in relay K63
The first via connect through 3M Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K73, it is single in relay K63
Second tunnel of the common terminal of double-pole double throw switch is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K73；
The first via of the common terminal of single-pole double-throw switch (SPDT) is through hilted broadsword in 4M Ohmic resistance and relay K74 in relay K73
The common terminal of commutator connects, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and relay in relay K73
The tap line end connection of single-pole double-throw switch (SPDT) in K74；The first of the common terminal of single-pole double-throw switch (SPDT) in relay K64
Road is connect through 4M Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K74, single-pole double throw in relay K64
Second tunnel of the common terminal of switch is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K74；In relay K54
The first via of the common terminal of single-pole double-throw switch (SPDT) is through 400K Ohmic resistance and one of single-pole double-throw switch (SPDT) in relay K64
Line end connection is tapped, the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and single-pole double throw in relay K64 in relay K54
The common terminal of switch connects；The first via of the common terminal of single-pole double-throw switch (SPDT) is through 40K Ohmic resistance in relay K44
It is connect with a tap line end of single-pole double-throw switch (SPDT) in relay K54, the public wiring of single-pole double-throw switch (SPDT) in relay K44
Second tunnel at end is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K54；Single-pole double-throw switch (SPDT) in relay K34
The first via of common terminal is connect through 4K Ohmic resistance with a tap line end of single-pole double-throw switch (SPDT) in relay K44, after
The public wiring on the second tunnel of the common terminal of single-pole double-throw switch (SPDT) and single-pole double-throw switch (SPDT) in relay K44 in electric appliance K34
End connection；The first via of the common terminal of single-pole double-throw switch (SPDT) is through in 400 Ohmic resistances and relay K34 in relay K24
One tap line end of single-pole double-throw switch (SPDT) connects, in relay K24 the second tunnel of the common terminal of single-pole double-throw switch (SPDT) with
The common terminal connection of single-pole double-throw switch (SPDT) in relay K34；The common terminal of single-pole double-throw switch (SPDT) in relay K14
The first via is connect through 40 Ohmic resistances with a tap line end of single-pole double-throw switch (SPDT) in relay K24, hilted broadsword in relay K14
Second tunnel of the common terminal of commutator is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K24；It is described can
The end R- of reconstruct electric resistance array is divided into two-way, tap wire of the first via through single-pole double-throw switch (SPDT) in 4 Ohmic resistances and relay K14
End connection, the second tunnel is connect with the common terminal of single-pole double-throw switch (SPDT) in relay K14.
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