CN110221517A - Measurement markers and photomask with the measurement markers - Google Patents
Measurement markers and photomask with the measurement markers Download PDFInfo
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- CN110221517A CN110221517A CN201810175113.3A CN201810175113A CN110221517A CN 110221517 A CN110221517 A CN 110221517A CN 201810175113 A CN201810175113 A CN 201810175113A CN 110221517 A CN110221517 A CN 110221517A
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- labeling section
- alignment mark
- measurement markers
- labeling
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
Abstract
The present invention relates to a kind of measurement markers and with the photomask of the measurement markers, the first alignment mark of measurement markers is with the first labeling section and the second labeling section being mutually connected vertically；Second alignment mark has the third labeling section and the 4th labeling section being mutually connected vertically, first alignment mark and second alignment mark are arranged in rectangular area and different layers are arranged, first alignment mark and the second alignment mark surround a discontinuous para-frame, and discontinuous para-frame has locating notch.The first of photomask, which describes layer, has the first pattern, and the first alignment mark is located at first and describes on layer；Second, which describes layer, has the second pattern, and the second alignment mark is located at second and describes on layer.First alignment mark of the measurement markers of the embodiment of the present invention and the second alignment mark are arranged in the same rectangular area, it is selected by the arrangement and line width of the first alignment mark and the second alignment mark, saves the use space of photomask and wafer cutting track to greatest extent.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of measurement markers and the light with the measurement markers are covered
Mould.
Background technique
Measurement markers on photomask are mainly used for the measurement of exposure mask measuring tool and use, by the alignment for detecting measurement markers
Situation, and then measure the quality of the pattern quality and photomask itself on photomask.Measurement markers in the prior art only have
One alignment mark, and be arranged on a certain description layer, therefore exposure mask measuring tool is merely able to examine by measuring the alignment mark
The quality for surveying partial pattern on photomask, can not detect the total quality of photomask.On the other hand, not with technology
Disconnected to develop, the pattern dimension on photomask is smaller and smaller, and the size of the alignment mark in existing standard photomask is greater than light
The size of mask pattern, therefore the pattern on photomask can be arranged and impact, increase the generation that defect is made in photomask.
Disclosed above- mentioned information are only used for reinforcing the understanding to background of the invention in the background technology, therefore it may be wrapped
Containing the information for not being formed as the prior art that those of ordinary skill in the art are known.
Summary of the invention
In view of this, the embodiment of the present invention provides a kind of measurement markers and the photomask with the measurement markers, to solve
Or alleviate the technical problems existing in the prior art, a kind of beneficial selection is at least provided.
The technical solution of the embodiment of the present invention is achieved in that
According to one embodiment of present invention, a kind of measurement markers are provided, comprising:
First alignment mark has the first labeling section and the second labeling section being mutually connected vertically；And
Second alignment mark has the third labeling section and the 4th labeling section being mutually connected vertically；
Wherein, first alignment mark and second alignment mark are arranged in rectangular area and different layers are arranged,
First alignment mark and second alignment mark surround a discontinuous para-frame, and the discontinuous para-frame has at least
Two locating notches.
In some embodiments, the institute of first labeling section of first alignment mark and second alignment mark
It states third labeling section to be arranged in parallel, second labeling section of first alignment mark is described with second alignment mark
4th labeling section is arranged in parallel.
In some embodiments, one end of first labeling section is connect with one end of second labeling section, forms L-type
Structure；And one end of the third labeling section is connect with one end of the 4th labeling section, forms inverted L shape structure；
Folded region is formed described fixed between the other end of first labeling section and the other end of the 4th labeling section
First locating notch of position notch, institute's clip area between the other end of second labeling section and the other end of the third labeling section
Domain forms the second locating notch of the locating notch.
In some embodiments, one end interconnection of one end of first labeling section and second labeling section, institute
State one end of third labeling section and one end interconnection of the 4th labeling section；And
Folded region is formed described fixed between the other end of first labeling section and the other end of the 4th labeling section
First locating notch of position notch, institute's clip area between the other end of second labeling section and the other end of the third labeling section
Domain forms the second locating notch of the locating notch.
In some embodiments, the space structure of the space structure of first alignment mark and second alignment mark
It is identical.
In some embodiments, when the sky of first labeling section of first alignment mark and second labeling section
Between structure when being convex strip structure, the space knot of the third labeling section of second alignment mark and the 4th labeling section
Structure is convex strip structure；And
When first labeling section of first alignment mark and the space structure of second labeling section are groove knot
When structure, the third labeling section of second alignment mark and the space structure of the 4th labeling section are groove structure.
In some embodiments, first labeling section, second labeling section, the third labeling section and described
Each length of four labeling sections be it is isometric, and the isometric length be first labeling section, it is second labeling section, described
The width integral multiple of third labeling section and the 4th labeling section.
In some embodiments, when first labeling section, second labeling section, the third labeling section and described
Any standard size of each equivalent width specification of 4th labeling section at 0.08 μm, 0.2 μm, 0.4 μm and 0.8 μm, described
One labeling section, second labeling section, the third labeling section and the 4th labeling section any length be all larger than 4 μm.
In some embodiments, each edge lengths of the rectangular area are greater than first labeling section, second label
The length in portion, the third labeling section and the 4th labeling section, and less than 20 μm.
In some embodiments, in the case where being separated by the diagonal line of the locating notch, first alignment mark and institute
The second alignment mark is stated as mirror symmetry setting.
According to another embodiment of the invention, a kind of photomask, including above-mentioned measurement markers are provided, further includes:
First describes layer, has the first pattern, and first alignment mark of the measurement markers is located at described first and retouches
It draws on layer, for detecting the Aligning degree of first pattern；And
Second describes layer, has the second pattern, and second alignment mark of the measurement markers is located at described second and retouches
It draws on layer, for detecting the Aligning degree of second pattern；
Wherein, the locating notch of the measurement markers is used to detect first pattern on the first description layer
Describe the Aligning degree between second pattern on layer with described second.
In some embodiments, first alignment mark and second alignment mark of the measurement markers are revealed in
The surface of the photomask.
The embodiment of the present invention due to using the technology described above, has the advantage that the measurement of the 1, embodiment of the present invention
The first alignment mark and the second alignment mark of label are arranged in the same rectangular area simultaneously, by the first alignment mark and
The arrangement and line width of second alignment mark select, and the use for saving photomask and wafer cutting track to greatest extent is empty
Between.2, the line width of the measurement markers of the embodiment of the present invention can be selected according to need of work, meet the small ruler on photomask
The alignment measurement demand of very little pattern, and pattern will not be impacted, while the measurement that can also meet exposure mask measuring tool is wanted
It asks.
Above-mentioned general introduction is merely to illustrate that the purpose of book, it is not intended to be limited in any way.Except foregoing description
Schematical aspect, except embodiment and feature, by reference to attached drawing and the following detailed description, the present invention is further
Aspect, embodiment and feature, which will be, to be readily apparent that.
Detailed description of the invention
In the accompanying drawings, unless specified otherwise herein, otherwise indicate the same or similar through the identical appended drawing reference of multiple attached drawings
Component or element.What these attached drawings were not necessarily to scale.It should be understood that these attached drawings depict only according to the present invention
Disclosed some embodiments, and should not serve to limit the scope of the present invention.
Fig. 1 is the structure chart of the measurement markers of the embodiment of the present invention.
Fig. 2 is the structure chart of the measurement markers of another embodiment of the present invention.
Fig. 3 is the structure chart of the measurement markers of further embodiment of this invention.
The structure chart that Fig. 4 is the first alignment mark of the embodiment of the present invention and the second alignment mark line width is 0.08 μm.
The structure chart that Fig. 5 is the first alignment mark of the embodiment of the present invention and the second alignment mark line width is 0.2 μm.
The structure chart that Fig. 6 is the first alignment mark of the embodiment of the present invention and the second alignment mark line width is 0.4 μm.
Fig. 7 is the structure chart of the photomask of the embodiment of the present invention.
Fig. 8 is the structure chart of the first description layer of the photomask of the embodiment of the present invention.
Fig. 9 is the structure chart of the second description layer of the photomask of the embodiment of the present invention.
Drawing reference numeral explanation:
100- measurement markers；The first alignment mark of 10-；The first labeling section of 11-；
The second labeling section of 12-；The second alignment mark of 20-；21- third labeling section；
The 4th labeling section of 22-；The rectangular area 30-；The discontinuous para-frame of 40-；
The first locating notch of 41-；200- photomask；210- first describes layer；
220- second describes layer；The first pattern of 211-；The second pattern of 221-；
The edge of the rectangular area 31-；The edge of 230- photomask；The second locating notch of 42-.
Specific embodiment
Hereinafter, certain exemplary embodiments are simply just described.As one skilled in the art will recognize that
Like that, without departing from the spirit or scope of the present invention, described embodiment can be modified by various different modes.
Therefore, attached drawing and description are considered essentially illustrative rather than restrictive.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be orientation based on the figure or
Positional relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device or component of indication or suggestion meaning must
There must be specific orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more of the features.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；It can be mechanical connect
It connects, is also possible to be electrically connected, can also be communication；It can be directly connected, can also indirectly connected through an intermediary, it can be with
It is the connection or the interaction relationship of two components of two component internals.For the ordinary skill in the art, may be used
To understand the concrete meaning of above-mentioned term in the present invention as the case may be.
In the present invention unless specifically defined or limited otherwise, fisrt feature second feature "upper" or "lower"
It may include that the first and second features directly contact, also may include that the first and second features are not direct contacts but pass through it
Between other characterisation contact.Moreover, fisrt feature second feature " on ", " side " and " above " include fisrt feature
Right above second feature and oblique upper, or first feature horizontal height is merely representative of higher than second feature.Fisrt feature is
Two features " under ", " lower section " and " following " include fisrt feature right above second feature and oblique upper, or be merely representative of
One characteristic level height is less than second feature.
Following disclosure provides many different embodiments or example is used to realize different structure of the invention.In order to
Simplify disclosure of the invention, hereinafter the component of specific examples and setting are described.Certainly, they are merely examples, and
And it is not intended to limit the present invention.In addition, the present invention can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, itself not indicate between discussed various embodiments and/or setting
Relationship.In addition, the present invention provides various specific techniques and material example, but those of ordinary skill in the art can be with
Recognize the application of other techniques and/or the use of other materials.
As shown in Figure 1, the embodiment of the invention provides a kind of measurement markers 100, comprising:
First alignment mark 10 has the first labeling section 11 and the second labeling section 12 being mutually connected vertically.
Second alignment mark 20 has the third labeling section 21 and the 4th labeling section 22 being mutually connected vertically.
Rectangular area 30, for the first alignment mark 10 and the second alignment mark 20 to be arranged.First alignment mark 10 and
Two alignment marks 20 are arranged in rectangular area 30 and different layers are arranged.And first alignment mark 10 and the second alignment mark 20 exist
Orthographic projection in horizontal direction is not overlapped.First alignment mark 10 and the second alignment mark 20 surround a discontinuous para-frame 40,
Discontinuous para-frame 40 has at least two locating notches.
It should be noted that different layers can be understood as the first alignment mark 10 and the second alignment mark 20 is arranged in rectangle
In Different Plane in region 30.Orthographic projection, which is not overlapped, can be understood as overlooking the first alignment mark 10 perpendicular to rectangular area 30
When with the second alignment mark 20, the projection of the first alignment mark 10 and the second alignment mark 20 on rectangular area 30 is not overlapped.
Being located between the first alignment mark 10 and the second alignment mark 20 in rectangular area 30 has spacing, which avoids first
Alignment mark 10 and the contact of the second alignment mark 20, and the first alignment mark 10 and the second alignment mark 20 dislocation arrangement.It is i.e. anti-
Only 22 weight of third labeling section 21 or the 4th labeling section of the first labeling section 11 of the first alignment mark 10 and the second alignment mark 20
It closes, prevents the second labeling section 12 of the first alignment mark 10 and the third labeling section 21 or the 4th labeling section of the second alignment mark 20
22 are overlapped.
In order to rationally save the space that measurement markers 100 occupy rectangular area 30, as shown in Figure 1-3, the first alignment
First labeling section 11 of label 10 and the third labeling section 21 of the second alignment mark 20 are arranged in parallel, and the of the first alignment mark 10
Two labeling sections 12 and the 4th labeling section 22 of the second alignment mark 20 are arranged in parallel.
In a specific embodiment, the first labeling section 11 and third labeling section 21 are arranged along the vertical direction, and second
Labeling section 12 and the 4th labeling section 22 are horizontally disposed.X-axis in false coordinate system is horizontal direction, and Y-axis is vertical side
To then the first labeling section 11 and third labeling section 21 are parallel to Y-axis setting, and the second labeling section 12 and the 4th labeling section 22 are parallel to
X-axis setting.
In one embodiment, shown in as shown in Figure 1, Figure 2, Fig. 4-6, one end of the first labeling section 11 and the second labeling section 12
One end connection, forms L-type structure.One end of third labeling section 21 is connect with one end of the 4th labeling section 22, forms inverted L shape knot
Structure.Folded region forms the first locating notch 41 between the other end of first labeling section 11 and the other end of the 4th labeling section 22,
Folded region forms the second locating notch 42 between the other end of second labeling section 12 and the other end of third labeling section 21.
Wherein, the first locating notch 41 and the second locating notch 42 can be used to detect first alignment mark 10 and the
The relative position of two alignment marks 20.
In another transformable embodiment, as shown in figure 3, one end of the first labeling section 11 and the second labeling section 12
One end interconnection, one end interconnection of one end of third labeling section 21 and the 4th labeling section 22.First labeling section 11 it is another
Folded region forms the first locating notch 41, the other end of the second labeling section 12 between one end and the other end of the 4th labeling section 22
Folded region forms the second locating notch 42 between the other end of third labeling section 21.
In one embodiment, the space structure phase of the space structure of the first alignment mark 10 and the second alignment mark 20
Together.It is stereochemical structure that the space structure, which can be understood as the first alignment mark 10 and the second alignment mark 20,.The space structure
Opposite rectangular area 30 can be convex or concave structure.
In an alternative embodiment, as shown in Figure 1, when the first labeling section 11 of the first alignment mark 10 and the second mark
When the space structure in note portion 12 is convex strip structure, the third labeling section 21 of the second alignment mark 20 and the sky of the 4th labeling section 22
Between structure be also convex strip structure.
In another alternative embodiment, as shown in Fig. 2, working as the first labeling section 11 and second of the first alignment mark 10
When the space structure of labeling section 12 is groove structure, the third labeling section 21 of the second alignment mark 20 and the sky of the 4th labeling section 22
Between structure be groove structure.
In another embodiment, the space structure of the space structure of the first alignment mark 10 and the second alignment mark 20 is not
It is identical.It is stereochemical structure that the space structure, which can be understood as the first alignment mark 10 and the second alignment mark 20,.Space knot
Structure can be convex or concave structure with respect to rectangular area 30.
When the space structure of the first labeling section 11 of the first alignment mark 10 and the second labeling section 12 is convex strip structure,
The third labeling section 21 of second alignment mark 20 and the space structure of the 4th labeling section 22 are groove structure.
When the space structure of the first labeling section 11 of the first alignment mark 10 and the second labeling section 12 is groove structure, the
The third labeling section 21 of two alignment marks 20 and the space structure of the 4th labeling section 22 are convex strip structure.
In one embodiment, the edge 31 of one end Yu rectangular area 30 of the third labeling section 21 of the second alignment mark 20
With the first spacing, the second labeling section 12 of the other end of third labeling section 21 and the first alignment mark 10 has the second spacing.
One end of 4th labeling section 22 of the second alignment mark 20 and the edge 31 of rectangular area 30 have third spacing, the 4th labeling section
First labeling section 11 of 22 other end and the first alignment mark 10 has the 4th spacing.
The both ends of first labeling section 11 of the first alignment mark 10 have between the 5th with the edge 31 of rectangular area 30 respectively
Away from the 6th spacing.The both ends of second labeling section 12 of the first alignment mark 10 have the with the edge 31 of rectangular area 30 respectively
Seven spacing and the 8th spacing.
Wherein, the first spacing is equal with third spacing, and the second spacing is equal with the 4th spacing.5th spacing and the 6th spacing
It is equal.7th spacing and the 8th spacing are equal.To maximumlly save the area of rectangular area 30, while avoiding the first alignment
Label 10 and the contact of the second alignment mark 20.
In one embodiment, the first labeling section 11, the second labeling section 12, third labeling section 21 and the 4th labeling section 22
Each line width (width) standardize always in 0.08 μm (as shown in Figure 4), 0.2 μm (as shown in Figure 5), 0.4 μm (as shown in Figure 6)
With 0.8 μm (as shown in Figure 1) of arbitrary standards size, the first labeling section 11, the second labeling section 12, third labeling section 21 and
Any length of four labeling sections 22 is all larger than 4 μm.
The line width of first alignment mark 10 can be different from the line width of the second alignment mark 20, and can be any according to need of work
Combination.Such as when the line width of the first labeling section 11 and the second labeling section 12 is 0.08 μm, third labeling section 21 and the 4th label
22 line width is 0.08 μm, 0.2 μm, 0.4 μm or 0.8 μm.When the line width of the first labeling section 11 and the second labeling section 12 is 0.2 μm
When, the line width of third labeling section 21 and the 4th label 22 is 0.08 μm, 0.2 μm, 0.4 μm or 0.8 μm.When 11 He of the first labeling section
When the line width of second labeling section 12 is 0.4 μm, the line width of third labeling section 21 and the 4th label 22 is 0.08 μm, 0.2 μm, 0.4 μ
M or 0.8 μm.When the line width of the first labeling section 11 and the second labeling section 12 is 0.8 μm, third labeling section 21 and the 4th label 22
Line width be 0.08 μm, 0.2 μm, 0.4 μm or 0.8 μm.
In a preferred embodiment, the first labeling section 11 is identical with the line width of the second labeling section 12.First labeling section
11 is identical with the length of the second labeling section 12.Third labeling section 21 is identical with the line width of the 4th labeling section 22.Third labeling section 21
It is identical with the length of the 4th labeling section 22.
In one embodiment, each edge lengths of rectangular area 30 are greater than the first labeling section 11, the second labeling section 12, third
The length of labeling section 21 and the 4th labeling section 22, and less than 20 μm.That is area≤20 of rectangular area 302μm.And then it is maximum
The reduction measurement markers 100 of change occupy the area of photomask.
In a specific embodiment, when each side length when rectangular area 30 is 20 μm, the first alignment mark 10
The length of first labeling section 11 and the second labeling section 12 is 8 μm, the third labeling section 21 of the second alignment mark 20 and the 4th mark
The length in note portion 22 is 6.4 μm.It should be noted that the side length of rectangular area 30 and the first labeling section 11, the second labeling section
12, the combination of 22 side length of third labeling section 21 and the 4th labeling section is selected as needed, however it is not limited to the present embodiment
In specific value parameter, the present embodiment is only used for illustrating.
In another embodiment, the first labeling section 11, the second labeling section 12, third labeling section 21 and the 4th labeling section
22 each length be it is isometric, and the isometric length be the first labeling section 11, the second labeling section 12, third labeling section 21 and
The width integral multiple of 4th labeling section 22 is easier to calculate the clarity of figure in this way, reduces exposure interference.
In a specific embodiment, the first labeling section 11 and the second labeling section 12 are isometric, third labeling section 21 and
Four labeling sections 22 are isometric.Or, the first labeling section 11, the second labeling section 12, the length of third labeling section 21 and the 4th labeling section 22
Degree is equal.
Actual size on the photomask is made having a size of measurement markers 100 in each in the embodiment of the present invention, when carrying out
When measurement markers 100 design, four times can be reduced and be designed.I.e. (four times are≤20 μ for each side size≤5 μm of rectangular area 30
M), the line width of the first labeling section 11, the second labeling section 12, third labeling section 21 and the 4th labeling section 22 be 0.2 μm (four times are
0.8 μm), 0.1 μm (four times are 0.4 μm), 0.05 μm (four times are 0.2 μm) and 0.02 μm (four times are 0.08 μm).
The embodiment of the present invention also provides a kind of photomask (light shield) 200, as shown in fig. 7, comprises above-mentioned measurement markers
100.Photomask 200 further include:
As shown in figure 8, first describes layer 210, there is the first pattern 211, the first alignment mark 10 is located at first and describes layer
On 210.First alignment mark 10 is used to detect the Aligning degree of the first pattern 211 on the first description layer 210.
As shown in figure 9, second describes layer 220, there is the second pattern 221, the second alignment mark 20 is located at second and describes layer
On 220.Second alignment mark 20 is used to detect the Aligning degree of the second pattern 221 on the second description layer 220.
The locating notch of measurement markers 100 is used to detect the first pattern 211 and second on the first description layer 210 and describes layer
The Aligning degree between the second pattern 221 on 220.
It is to be understood that when exposure mask measuring tool detects that the opening size of locating notch and design size are essentially equal
When, then illustrate without offset and rotary shifted between the first alignment mark 10 and the second alignment mark 20, and further illustrate the
Between one pattern 211 and the second pattern 221 without offset and it is rotary shifted.
In one embodiment, discontinuous para-frame 40 is separated by the diagonal line of locating notch, makes the first alignment mark
10 and second alignment mark 20 be that mirror symmetry is arranged, therefore can compare the figure for eliminating different layers (can be understood as describe layer)
Case fabrication error, that is to say, that generate a non-standard change in pattern when manufacturing the first alignment mark 10 using photolithography technology
When, the second alignment mark 20 also has non-standard change in pattern identical or close but in mirror symmetry position.
In one embodiment, the first alignment mark 10 and the second alignment mark 20 are revealed in the surface of photomask 200.
In one embodiment, the edge of rectangular area 30 and the first pattern 211, the second pattern 221 and photomask 200
Edge 230 there is spacing.
In one embodiment, area≤20 of rectangular area 302μm, and then maximumlly reduce measurement markers 100 and account for
With the area of photomask 200.First alignment mark 10 and the second alignment mark 20 may be disposed to arbitrary shape, concrete shape according to
Operating condition is adjusted.The operating condition can be understood as on the pattern form on photomask 200 and the operating condition and wafer of setting position
Cutting track width and setting position operating condition etc..
The minimum value of the measurable line width of existing exposure mask measuring tool is 75nm, i.e., 0.075 μm, and the embodiment of the present invention
The first labeling section 11, the second labeling section 12, the line width of third labeling section 21 and the 4th labeling section 22 be 0.08 μm, 0.2 μm,
0.4 μm or 0.8 μm, therefore measurement markers 100 are also greatly saved under the premise of meeting minimum measurement line width and occupy light
The area of mask 200.It proves still to be able to meet existing photomask 200 in the case where line width reduces below by specific experiment
Measurement request, and measurement accuracy is met the requirements.
For the ease of measurement, actual value is reduced into design value, i.e., 0.08 μm of line width is reduced into original a quarter,
I.e. 0.02 μm, when the first labeling section 11 of the first alignment mark 10 of measurement markers 100 and the second labeling section 12 use 0.02 μm
When line width, exposure mask measuring tool describes the value such as table 1 of 64 each points on layer 210 by first that the first alignment mark 10 is measured
It is shown:
Table 1
Table 2
Table 2 is the integration to 1 data of table, has used first pair of the smallest 0.02 μm of line width according to table 1, table 2
When fiducial mark note 10, there is no problem and data can reflect the preferable amount of can compensate for for the measurement of exposure mask measuring tool, in addition puts down
The performance of mean value, minimum value and maximum value is also normal, in range of normal value.
In conclusion the embodiment of the present invention due to using the technology described above, has the advantage that the 1, present invention is implemented
First alignment mark 10 of the measurement markers 100 of example and the second alignment mark 20 are arranged in the same rectangular area 30 simultaneously,
It is selected by the arrangement and line width of the first alignment mark 10 and the second alignment mark 20, saves photomask to greatest extent
200 and wafer cutting track use space.2, the line width of the measurement markers 100 of the embodiment of the present invention can be according to need of work
It is selected, meets the alignment measurement demand of the small size pattern on photomask 200, and pattern will not be impacted, simultaneously
The measurement request of exposure mask measuring tool can also be met.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can readily occur in its various change or replacement,
These should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the guarantor of the claim
It protects subject to range.
Claims (12)
1. a kind of measurement markers characterized by comprising
First alignment mark has the first labeling section and the second labeling section being mutually connected vertically；And
Second alignment mark has the third labeling section and the 4th labeling section being mutually connected vertically；
Wherein, first alignment mark and second alignment mark are arranged in rectangular area and different layers are arranged, described
First alignment mark and second alignment mark surround a discontinuous para-frame, and the discontinuous para-frame has at least two
Locating notch.
2. measurement markers as described in claim 1, which is characterized in that first labeling section of first alignment mark with
The third labeling section of second alignment mark is arranged in parallel, second labeling section of first alignment mark and institute
The 4th labeling section for stating the second alignment mark is arranged in parallel.
3. measurement markers as claimed in claim 2, which is characterized in that one end of first labeling section and second label
The one end in portion connects, and forms L-type structure；And one end of the third labeling section is connect with one end of the 4th labeling section,
Form inverted L shape structure；
Folded region forms the positioning and lacks between the other end of first labeling section and the other end of the 4th labeling section
First locating notch of mouth, folded region shape between the other end of second labeling section and the other end of the third labeling section
At the second locating notch of the locating notch.
4. measurement markers as claimed in claim 2, which is characterized in that one end of first labeling section and second label
One end interconnection in portion, one end interconnection of one end of the third labeling section and the 4th labeling section；And
Folded region forms the positioning and lacks between the other end of first labeling section and the other end of the 4th labeling section
First locating notch of mouth, folded region shape between the other end of second labeling section and the other end of the third labeling section
At the second locating notch of the locating notch.
5. measurement markers as described in claim 1, which is characterized in that the space structure of first alignment mark and described the
The space structure of two alignment marks is identical.
6. measurement markers as claimed in claim 5, which is characterized in that when first labeling section of first alignment mark
When space structure with second labeling section is convex strip structure, the third labeling section of second alignment mark and institute
The space structure for stating the 4th labeling section is convex strip structure；And
When the space structure of first labeling section of first alignment mark and second labeling section is groove structure,
The third labeling section of second alignment mark and the space structure of the 4th labeling section are groove structure.
7. measurement markers as described in claim 1, which is characterized in that first labeling section, second labeling section, described
Each length of third labeling section and the 4th labeling section is isometric, and the isometric length is first label
Portion, second labeling section, the third labeling section and the 4th labeling section width integral multiple.
8. measurement markers as claimed in claim 7, which is characterized in that when first labeling section, second labeling section, institute
Each equivalent width specification of third labeling section and the 4th labeling section is stated at 0.08 μm, 0.2 μm, 0.4 μm and 0.8 μm
Any standard size, first labeling section, second labeling section, the third labeling section and the 4th labeling section
Any length is all larger than 4 μm.
9. measurement markers as claimed in claim 8, which is characterized in that each edge lengths of the rectangular area are greater than described first
Labeling section, second labeling section, the length of the third labeling section and the 4th labeling section, and less than 20 μm.
10. measurement markers as described in any one of claim 1 to 9, which is characterized in that passing through the diagonal of the locating notch
Under line separates, first alignment mark and second alignment mark are mirror symmetry setting.
11. a kind of photomask, which is characterized in that including measurement markers as described in claim 1, further includes:
First describes layer, has the first pattern, and first alignment mark of the measurement markers is located at described first and describes layer
On, for detecting the Aligning degree of first pattern；And
Second describes layer, has the second pattern, and second alignment mark of the measurement markers is located at described second and describes layer
On, for detecting the Aligning degree of second pattern；
Wherein, the locating notch of the measurement markers is used to detect first pattern on the first description layer and institute
State the Aligning degree between second pattern on the second description layer.
12. photomask as claimed in claim 11, which is characterized in that first alignment mark of the measurement markers and institute
State the surface that the second alignment mark is revealed in the photomask.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810175113.3A CN110221517A (en) | 2018-03-02 | 2018-03-02 | Measurement markers and photomask with the measurement markers |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810175113.3A CN110221517A (en) | 2018-03-02 | 2018-03-02 | Measurement markers and photomask with the measurement markers |
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| CN110221517A true CN110221517A (en) | 2019-09-10 |
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| CN201810175113.3A Pending CN110221517A (en) | 2018-03-02 | 2018-03-02 | Measurement markers and photomask with the measurement markers |
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