CN110213877A - Bundle device is split for the ion beam of beam simultaneously for a kind of multiple terminals - Google Patents
Bundle device is split for the ion beam of beam simultaneously for a kind of multiple terminals Download PDFInfo
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- CN110213877A CN110213877A CN201910541039.7A CN201910541039A CN110213877A CN 110213877 A CN110213877 A CN 110213877A CN 201910541039 A CN201910541039 A CN 201910541039A CN 110213877 A CN110213877 A CN 110213877A
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- Prior art keywords
- electrostatic
- splits
- magnetostatic
- direction guide
- ion
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
- H05H7/06—Two-beam arrangements; Multi-beam arrangements storage rings; Electron rings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
- H05H7/08—Arrangements for injecting particles into orbits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
- H05H7/08—Arrangements for injecting particles into orbits
- H05H2007/081—Sources
- H05H2007/082—Ion sources, e.g. ECR, duoplasmatron, PIG, laser sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
- H05H7/08—Arrangements for injecting particles into orbits
- H05H2007/085—Arrangements for injecting particles into orbits by electrostatic means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
- H05H7/08—Arrangements for injecting particles into orbits
- H05H2007/087—Arrangements for injecting particles into orbits by magnetic means
Abstract
The present invention relates to a kind of multiple terminals to split bundle device for the ion beam of beam simultaneously, it include: electrostatic Pi Shu mechanism, at least one level electrostatic Pi Shu mechanism is successively set on the stream outlet front end of prime accelerator installation, for the ion beam from prime accelerator installation to be transversely cut into one main beam and at least one secondary beam;Magnetostatic beam direction guide mechanism, at least one magnetostatic beam direction guide mechanism are separately positioned in one every secondary beam deflection path at electrostatic Pi Shu mechanism rear;Wherein, main beam continues to be separated once again or be directly distributed to experiment/application terminal along linear transmission to next stage electrostatic Pi Shu mechanism;Secondary beam deviates and cuts magnetostatic beam direction guide mechanism thereafter by electrostatic Pi Shu mechanism, and secondary beam is distributed to another experiment/application terminal after magnetostatic beam direction guide mechanism is further offset from.The present invention solves the problems, such as that traditional accelerator unit/terminal low efficiency and multiple terminals beam distribution based on time usage range are small.
Description
Technical field
The present invention relates to a kind of ion beams to split bundle device, specifically splits beam for the ion beam of beam simultaneously about a kind of multiple terminals
Device belongs to Application of Nuclear Technology technical field.
Background technique
Since First ion accelerator comes out, through semicentennial development, the application of accelerator art relates to extensively
And each field such as scientific research, agricultural, industry, medical treatment, space flight, nuclear energy.Currently, energetic ion accelerator art, which has become, carries out core object
The main tool of the area researches such as reason, space flight and nuclear astrophysics.Other than scientific research and space flight irradiate, middle energy ion
(60MeV/u-400MeV/u) accelerator art is in recent years in medical field also to obtain incremental advances;And low energy ion (≤
60MeV/u) accelerator art has deeply taken root ion implanting, industrial or agricultural irradiation, with fields such as position pharmacy in recent years, and product is
It is closely bound up with daily life.
Currently, traditional industrial or agricultural irradiation accelerator is adopted in the world in the application of nearly all low energy accelerator technology
With unit/terminal or multiple terminals operational mode.Unit/terminal mode, that is, accelerator only connects an application terminal, and operational efficiency is low.Traditional
Multiple terminals operational mode all uses low frequency (< 1000Hz) timesharing to split beam mode, i.e., peace is designed in the bunch system of accelerator
Fill one split beam guiding dipolar magnet, by the control of alternating magnetic field come when realizing different to different terminals for beam.Compare monohapto
Hold the method for operation, timesharing splits beam mode and improves machine operational efficiency to a certain extent, but due to the production of some products or
The irradiation process of material is to the continuity of ion beam high requirement again, therefore which application range is by certain restriction,
The practicability of accelerator is reduced to a certain extent.
Summary of the invention
In view of the above-mentioned problems, the object of the present invention is to provide a kind of multiple terminals to split bundle device for the ion beam of beam simultaneously, with
Solve the problems, such as that traditional accelerator unit/terminal low efficiency and multiple terminals beam distribution based on time usage range are small.
To achieve the above object, the present invention takes following technical scheme: a kind of multiple terminals splitting beam for the ion beam of beam simultaneously
Device, comprising: electrostatic Pi Shu mechanism, electrostatic Pi Shu mechanism described at least one level are successively set on prime accelerator installation
Downstream, for the ion beam from the prime accelerator installation to be transversely cut into one main beam and at least one secondary beam;
Magnetostatic beam direction guide mechanism, at least one described magnetostatic beam direction guide mechanism is separately positioned on to be split positioned at the electrostatic
In one every secondary beam deflection path of beam mechanism downstream;Wherein, main beam continues to split beam along electrostatic described in linear transmission to next stage
Mechanism is separated once again or is directly distributed to experiment/application terminal;Secondary beam is deviateed by electrostatic Pi Shu mechanism and cuts it
The magnetostatic beam direction guide mechanism afterwards, magnetostatic beam direction guide mechanism described in secondary Shu Jing are distributed to after further offsetting from
Another experiment/application terminal.
The ion beam splits bundle device, it is preferred that electrostatic Pi Shu mechanism includes that single seam electrostatic line splits beam device, is come
Beam device entrance, which is split, in single seam electrostatic line from the ion beam of the prime accelerator installation is transversely cut into primary and secondary two
Strands stream;
Alternatively, electrostatic Pi Shu mechanism includes that three seam electrostatic lines split beam device, from the prime accelerator installation
Ion beam splits beam device entrance in the three seams electrostatic line and is transversely cut into one main beam and two strands beams.
The ion beam splits bundle device, it is preferred that electrostatic Pi Shu mechanism include single seam electrostatic line split beam device and
The electrostatic deflection plates of arrangement in its rear, the ion beam from the prime accelerator installation split beam in single seam electrostatic line
Device entrance is transversely cut into two strands stream of primary and secondary, and secondary beam splits the described quiet of beam device and its rear by single seam electrostatic line
Electric deflection plate deviates and cuts the magnetostatic beam direction guide mechanism;
Alternatively, electrostatic Pi Shu mechanism includes that three seam electrostatic lines split the electrostatic deflection of beam device and arrangement in its rear
Plate, the ion beam from the prime accelerator installation split beam device entrance in the three seams electrostatic line and are transversely cut into one
Stock main beam and two strands beams, two strands beams are deviateed by the electrostatic deflection plates that the three seams electrostatic line splits beam device and its rear
And the two magnetostatic beam direction guide mechanisms are cut respectively.
The ion beam splits bundle device, it is preferred that the magnetostatic beam direction guide mechanism includes septum magnet;
Alternatively, the magnetostatic beam direction guide mechanism includes the two pole magnetic of deflection of septum magnet and arrangement in its rear
Iron.
The ion beam splits bundle device, it is preferred that is additionally provided with quadrupole lense in main beam transmission path.
The ion beam splits bundle device, it is preferred that single seam electrostatic line splits beam device or three seam electrostatic lines split beam
Device long 0.1-3.0m, gap 0.4-5.0cm, wide 1.0-10.0cm, single seam electrostatic line split beam device or three seam electrostatic lines
The cutting plate thickness 0.1-3.0mm inside beam device is split, ceiling voltage 300kV is loaded.
The ion beam splits bundle device, it is preferred that the long 0.1-3.0m of electrostatic deflection plates, the gap 0.4-5.0cm, it is wide
1.0-10.0cm loading ceiling voltage 300kV.
The ion beam splits bundle device, it is preferred that the magnetic field of the septum magnet is no more than 10.0kG, the cutting magnetic
The cutting pole thickness 1.0-5.0cm of iron.
The ion beam splits bundle device, it is preferred that the magnetic field of the deflection dipolar magnet is no more than 16kG.
The ion beam splits bundle device, it is preferred that middle low energy ion beam includes p-U, energy range 2-50MeV/u (C-
U), 5-100MeV (p).
The invention adopts the above technical scheme, which has the following advantages: 1, the present invention provides how whole a kind of utilization is
Bundle device is split for the ion beam of beam simultaneously in end, can effectively avoid ion beam in Physical Experiment and a variety of materials and biological irradiation first
In, a large amount of lines, the waste of time, human and material resources caused by traditional unit/terminal operating mode, if the device used
It, can even decades of times improves production efficiency at double in the production of product;Secondly, compared to timesharing multiple terminals for beam mode, originally
There is no the problems that line application range is limited for invention, while being more favorable to the extension of number of terminals being simultaneously operable, and improve
Line utilization efficiency, more effectively saves machine operation time, machine energy consumption and operating cost.2, the present invention can use one
Secondary or repeatedly split beam, the lateral beam optics between Pi Shu mechanism and terminal uses plug-in type standardized designs mode, can foundation
User demand is sequentially inserted into multiple Pi Shu mechanisms on line main line, makes multiple terminals while working online.The present invention can be wide
General ion beam irradiation research, processing and preparation applied to material, biological radiation research, the irradiation of aerospace electronic device are ground
Study carefully and detect etc..
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the embodiment of the present invention 1;
Fig. 2 is the structural schematic diagram of the embodiment of the present invention 2;
Fig. 3 is the structural schematic diagram of the embodiment of the present invention 3.
Specific embodiment
Presently preferred embodiments of the present invention is described in detail below with reference to attached drawing, it is of the invention to be clearer to understand
Objects, features and advantages.It should be understood that embodiment shown in the drawings does not limit the scope of the present invention, and only it is
Illustrate the connotation of technical solution of the present invention.
Embodiment 1:
As shown in Figure 1, bundle device is split for the ion beam of beam simultaneously in multiple terminals provided in this embodiment, comprising: electrostatic splits beam
The downstream of prime accelerator installation is arranged in mechanism, including a single seam electrostatic line splits beam device 1;Magnetostatic beam direction guiding
Mechanism is arranged and splits beam mechanism downstream, including a septum magnet 2 in electrostatic.When work, the ion from prime accelerator installation
Shu Dan seam electrostatic line splits 1 entrance of beam device and is transversely cut into two strands stream of primary and secondary, and main beam continues along linear transmission under
Level-one electrostatic Pi Shu mechanism is separated once again or is directly distributed to experiment/application terminal;Secondary beam coverlet seam electrostatic line splits beam
Device 1 deviates and cuts magnetostatic beam direction guide mechanism thereafter, cutting magnetic of the secondary beam through the magnetostatic beam direction guide mechanism
Iron 2 is distributed to another experiment/application terminal after further offsetting from.
In the present embodiment, it is preferred that single seam electrostatic line splits that beam device 1 is 0.1-3.0m long, and gap 0.4-5.0cm is wide
1.0-10.0cm, single electrostatic line that stitches split the cutting plate thickness 0.1-3.0mm of the electrostatic inside beam device 1, load ceiling voltage 300kV.
In the present embodiment, it is preferred that the magnetic field of septum magnet 2 is no more than 10.0kG, the cutting pole thickness of septum magnet 2
1.0-5.0cm。
In the present embodiment, it is preferred that middle low energy ion beam includes p-U (i.e. matter most light from quality in chemistry periodic table
All single-particles in son to the most heavy uranium location of quality), energy range 2-50MeV/u (C-U), 5-100MeV (p).
Embodiment 2:
As shown in Fig. 2, bundle device is split for the ion beam of beam simultaneously in multiple terminals provided in this embodiment, comprising: electrostatic splits beam
The downstream of prime accelerator installation is arranged in mechanism, including a single seam electrostatic line splits beam device 1 and an electrostatic deflection plates 3;It is magnetostatic
Beam direction guide mechanism, setting split beam mechanism downstream, including a septum magnet 2 and a deflection dipolar magnet 4 in electrostatic.Work
When, the ion beam from prime accelerator installation splits 1 entrance of beam device in singly seam electrostatic line and is transversely cut into two strands of primary and secondary
Line, main beam continue to be separated once again or be directly distributed to experiment/application along linear transmission to next stage electrostatic Pi Shu mechanism
Terminal;Secondary beam coverlet seam electrostatic line splits beam device 1 and its electrostatic deflection plates 3 at rear deviate and cut magnetostatic beam direction guiding
Mechanism, secondary beam are distributed to after the septum magnet 2 of the magnetostatic beam direction guide mechanism and two pole deflection magnets 4 are further offset from
Another experiment/application terminal.
In the present embodiment, several quadrupole lenses 6, the effect of quadrupole lense 6 are additionally provided in main beam transmission path
It is that main beam is made transversely to form a series of identical periodic focusing mode of optics.
In the present embodiment, it is preferred that electrostatic deflection plates 3 are 0.1-3.0m long, gap 0.4-5.0cm, wide 1.0-10.0cm,
Load ceiling voltage 300kV.
In the present embodiment, it is preferred that the magnetic field of deflection dipolar magnet 4 is no more than 16kG.
Embodiment 3:
As shown in figure 3, bundle device is split for the ion beam of beam simultaneously in multiple terminals provided in this embodiment, comprising: electrostatic splits beam
The downstream of prime accelerator installation is arranged in mechanism, including one three seam electrostatic line splits beam device 5 and an electrostatic deflection plates 3;
Magnetostatic beam direction guide mechanism, setting split beam mechanism downstream, including a septum magnet 2 and a deflection dipolar magnet 4 in electrostatic.
When work, the ion beam from prime accelerator installation splits 5 entrance of beam device in three seam electrostatic lines and is transversely cut into one
Main beam and two strands beams, main beam continuation are separated once again to next stage electrostatic Pi Shu mechanism along linear transmission or are directly distributed to
Experiment or application terminal;Two strands beams are split the deviation of electrostatic deflection plates 3 of beam device 5 and its rear and cut respectively by three seam electrostatic lines
Enter two magnetostatic beam direction guide mechanisms, septum magnet 2 and two poles of the secondary beam through the magnetostatic beam direction guide mechanism deflect magnetic
Iron 4 is distributed to another two experiments/application terminal after further offsetting from.
In the present embodiment, it is preferred that three seam electrostatic lines split that beam device 5 is 0.1-3.0m long, and gap 0.4-5.0cm is wide
1.0-10.0cm cuts plate thickness 0.5-3.0mm, loads ceiling voltage 300kV.
The various embodiments described above are merely to illustrate the present invention, wherein the structure of each component, connection type and manufacture craft etc. are all
It can be varied, all equivalents and improvement carried out based on the technical solution of the present invention should not exclude
Except protection scope of the present invention.
Claims (10)
1. bundle device is split for the ion beam of beam simultaneously in a kind of multiple terminals characterized by comprising
Electrostatic Pi Shu mechanism, electrostatic Pi Shu mechanism described at least one level are successively set on the downstream of prime accelerator installation,
For the ion beam from the prime accelerator installation to be transversely cut into one main beam and at least one secondary beam;
Magnetostatic beam direction guide mechanism, at least one described magnetostatic beam direction guide mechanism are separately positioned on positioned at described quiet
Electricity is split in one every secondary beam deflection path of beam mechanism downstream;
Wherein, main beam continues to be separated once again or be directly distributed to reality along electrostatic Pi Shu mechanism described in linear transmission to next stage
Test/application terminal;
Secondary beam deviates and cuts the magnetostatic beam direction guide mechanism thereafter by electrostatic Pi Shu mechanism, described in secondary Shu Jing
Magnetostatic beam direction guide mechanism is distributed to another experiment/application terminal after further offsetting from.
2. ion beam according to claim 1 splits bundle device, which is characterized in that electrostatic Pi Shu mechanism includes that single seam is quiet
Electric line splits beam device (1), and the ion beam from the prime accelerator installation splits beam device (1) entrance in single seam electrostatic line
Transversely it is cut into two strands stream of primary and secondary;
Alternatively, electrostatic Pi Shu mechanism include three seam electrostatic lines split beam device (5), from the prime accelerator installation from
Beamlet splits beam device (5) entrance in the three seams electrostatic line and is transversely cut into one main beam and two strands beams.
3. ion beam according to claim 1 splits bundle device, which is characterized in that electrostatic Pi Shu mechanism includes that single seam is quiet
Electric line splits the electrostatic deflection plates (3) of beam device (1) and arrangement in its rear, and the ion beam from the prime accelerator installation exists
Single seam electrostatic line splits beam device (1) entrance and is transversely cut into two strands stream of primary and secondary, and secondary beam is by single seam electrostatic beam
Stream splits beam device (1) and its electrostatic deflection plates (3) at rear deviate and cut the magnetostatic beam direction guide mechanism;
Alternatively, electrostatic Pi Shu mechanism includes that three seam electrostatic lines split the electrostatic deflection plates of beam device (5) and arrangement in its rear
(3), the ion beam from the prime accelerator installation is split beam device (5) entrance in the three seams electrostatic line and is transversely cut
At one main beam and two strands beams, the electrostatic that two strands beams split beam device (5) and its rear by the three seams electrostatic line is inclined
Rotating plate (3) deviates and cuts the two magnetostatic beam direction guide mechanisms respectively.
4. splitting bundle device to 3 described in any item ion beams according to claim 1, which is characterized in that the magnetostatic beam direction
Guide mechanism includes septum magnet (2);
Alternatively, the magnetostatic beam direction guide mechanism includes the deflection dipolar magnet of septum magnet (2) and arrangement in its rear
(4)。
5. splitting bundle device to 3 described in any item ion beams according to claim 1, which is characterized in that in main beam transmission path
It is additionally provided with quadrupole lense (6).
6. ion beam according to claim 2 or 3 splits bundle device, which is characterized in that single seam electrostatic line splits beam device
(1) or three seam electrostatic lines split beam device (5) long 0.1-3.0m, gap 0.4-5.0cm, wide 1.0-10.0cm, single seam electrostatic
Line splits beam device (1) or three seam electrostatic lines split the internal cutting plate thickness 0.1-3.0mm of beam device (5), loads ceiling voltage
300kV。
7. ion beam according to claim 3 splits bundle device, which is characterized in that the long 0.1- of the electrostatic deflection plates (3)
3.0m, gap 0.4-5.0cm, wide 1.0-10.0cm load ceiling voltage 300kV.
8. ion beam according to claim 4 splits bundle device, which is characterized in that the magnetic field of the septum magnet (2) does not surpass
Cross 10.0kG, the cutting pole thickness 1.0-5.0cm of the septum magnet (2).
9. ion beam according to claim 4 splits bundle device, which is characterized in that the magnetic field of deflection dipolar magnet (4)
No more than 16kG.
10. ion beam according to claim 2 or 3 splits bundle device, which is characterized in that middle low energy ion beam includes p-U, energy
It measures range 2-50MeV/u (C-U), 5-100 MeV (p).
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111292866A (en) * | 2020-03-05 | 2020-06-16 | 中国科学院近代物理研究所 | Heavy ion production device for nuclear track membrane industrial production |
CN113409981A (en) * | 2021-06-18 | 2021-09-17 | 中国科学院近代物理研究所 | Multi-surface irradiation method and system for electron beam irradiation processing |
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CN113409981B (en) * | 2021-06-18 | 2023-05-05 | 中国科学院近代物理研究所 | Multi-surface irradiation method and system for electron beam irradiation processing |
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