CN110211614A - A kind of latch based on magnetic Skyrmion and trigger and control method - Google Patents
A kind of latch based on magnetic Skyrmion and trigger and control method Download PDFInfo
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- CN110211614A CN110211614A CN201910511022.7A CN201910511022A CN110211614A CN 110211614 A CN110211614 A CN 110211614A CN 201910511022 A CN201910511022 A CN 201910511022A CN 110211614 A CN110211614 A CN 110211614A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
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Abstract
The invention belongs to digital circuit technique fields, disclose a kind of latch based on magnetic Skyrmion and trigger and control method, latch based on magnetic Skyrmion is heavy metal HM layers and ferromagnetic FM layers of double-layer structure, preset magnetism Skyrmion in ferromagnetic layer, when not applying voltage E=0 on the E of enable end, by applying voltage to input terminal D, control position of the magnetic Skyrmion in ferromagnetic layer, when applying voltage E=1 on the E of enable end, position of the magnetic Skyrmion in ferromagnetic layer be not with the state change of input terminal D；In the present invention, cascade is carried out by two latch based on magnetic Skyrmion constitute trigger.The present invention substantially reduces latch occupied area, is conducive to simplify circuit design, can be used for more highdensity sequential logical circuit；Magnetic storage of the present invention have it is non-volatile, greatly reduce the quiescent dissipation of latch and trigger.
Description
Technical field
The invention belongs to digital circuit technique field more particularly to a kind of latch and triggering based on magnetic Skyrmion
Device and control method.
Background technique
Currently, the immediate prior art:
Latch and trigger are memory elements important in sequential logical circuit.Traditional latch and trigger be by
Cmos logic gate is built.
Problem of the existing technology is:
(1) traditional cmos latch device with trigger is built by multiple cmos logic gates, needs to apply to a large amount of
Transistor, cause its occupied area larger.
(2) cmos latch device and its storage information of trigger are with volatibility, i.e. loss of data after closing power supply, existing skill
Art needs the moment to keep the connection of power supply and lead to biggish quiescent dissipation.
Solve the difficulty of above-mentioned technical problem:
Above-mentioned technical problem be under CMOS technology it is intrinsic, be difficult to thoroughly solve at present.
Solve the meaning of above-mentioned technical problem:
Spin electric device carries out storage calculating by regulating and controlling the spin direction of electronics.Compared with cmos device, the present invention
Used spin electric device has high durability degree, low-power consumption, high speed, non-volatile, the reduction occupied area of data etc. many
Advantage.Magnetic Skyrmion (Magnetic Skyrmion) is then a kind of topological state, nonlinear spin structure, is present in hand
In property magnet or magnetoresistance effect.Magnetic Skyrmion can become the carrier of data in ferromagnetic layer with analogy at quasi particle,
For storage and operation.
The present invention uses the spin electric device using magnetic Skyrmion as information carrier, come construct novel latch and
Trigger will realize the digital circuitry of more high density, more low-power consumption.
Summary of the invention
In view of the problems of the existing technology, the present invention provides a kind of latch based on magnetic Skyrmion and triggerings
Device and control method.
The invention is realized in this way a kind of latch based on magnetic Skyrmion, described based on magnetic Skyrmion
Latch be heavy metal HM layer and ferromagnetic FM layers of double-layer structure, in the middle part of HM layers of heavy metal with ferromagnetic FM layers of double-layer structure
It is provided with ferroelectric layer or dielectric layer, as enable end E.The double-layer structure right end that HM layers and ferromagnetic FM layers of heavy metal places magnetic tunnel
For road knot MTJ as output end Q, MTJ is placed as reversed-phase output in the double-layer structure left end that HM layers and ferromagnetic FM layers of heavy metal
Heavy metal layer horizontal direction one terminates input signal D, and the other end is grounded GND.
Further, preset magnetism Skyrmion in ferromagnetic layer.
Another object of the present invention is to provide the control method of the latch based on magnetic Skyrmion described in one kind, institutes
The control method for stating the latch based on magnetic Skyrmion includes:
When not applying voltage E=0 on the E of enable end, by applying voltage to input terminal D, controls magnetic Skyrmion and exist
Position in ferromagnetic layer.And magnetic anisotropy is gradient anisotropy, magnetic anisotropy constant line along its length in ferromagnetic layer
Property be incremented by.
When input terminal D not being applied or being applied the voltage D=0 lower than threshold value, spontaneous is moved to by magnetic Skyrmion
Ferromagnetic layer left end, reversed-phase outputLower section, state are the most low state of total magnetic property.
When applying the voltage D=1 for being higher than threshold value to input terminal D, the electric current in introducing face in heavy metal layer generates spin rail
Skyrmion in road torque SOT driving ferromagnetic layer is moved to below output end Q.
Further, the method that output end Q is used to detect Skyrmion includes: to read its tunnel by applying read current to MTJ
Road magneto-resistor TMR.
Low resistance state is presented when not detecting Skyrmion below output end Q, exports low level Q=0, while Si Geming
Son will be located at reversed-phase outputLower section,
High-impedance state is presented when detecting Skyrmion below output end Q, exports high level Q=1, meanwhile,
Further, when applying voltage on the E of enable end, E=1 modifies the magnetic anisotropy constant of controlled area, makes this
Region magnetic anisotropy can increase to form high-energy potential barrier, block Skyrmion in output end Q and reversed-phase outputLower section it
Between movement.When D=0 or D=1, Q andIt remains unchanged.
Another object of the present invention is to provide a kind of trigger of the latch based on magnetic Skyrmion described in carrying,
The trigger based on magnetic Skyrmion is provided with
Main latch and from latch；
It the main latch and is cascaded from latch, the output end of main latch connects with from the input terminal of latch
It connects, constitutes master-slave mode d type flip flop.
Another object of the present invention is to provide the control method of the latch based on magnetic Skyrmion described in one kind, institutes
The control method for stating the latch based on magnetic Skyrmion includes:
When clock signal CP is low level, main latch is opened, and is closed from latch, realizes input terminal to main latch
The data of output end are transmitted.
When CP rising edge arrives, main latch is closed, and is opened from latch, is applied in the output end of main latch and is read electricity
Pulse is flowed, main latch output end voltage signal is obtained and passes to the input terminal from latch, main latch output end voltage
The height of signal determines the height of the magnetoelectricity resistance state stored from latch outputs.
Another object of the present invention is to provide a kind of timing of the latch based on magnetic Skyrmion described in carrying to patrol
Collect memory element in circuit.
Another object of the present invention is to provide a kind of timing of the trigger based on magnetic Skyrmion described in carrying to patrol
Collect memory element in circuit.
In conclusion advantages of the present invention and good effect are as follows:
Traditional cmos latch device with trigger is built by multiple cmos logic gates, needs to apply to a large amount of crystalline substance
Body pipe causes its occupied area larger.For example, a CMOS D-latch can be built by 4 NAND gates, need to use
16 transistors, the about several hundred thousands of a F^2 of occupied area (F is CMOS technology characteristic size).In the present invention, the realization of latch
It is based on single independent device, structure is simple, easily scalable, and size can reach under existing preparation process and technical conditions
To tens Nano grades.For example, calculated when the latch in the present invention is having a size of 40nm × 80nm with 10nm CMOS technology,
Occupied area only just corresponds to 32 F^2.Therefore, compared to traditional cmos latch, the present invention substantially reduces latch institute
Area is accounted for, is conducive to simplify circuit design, in more highdensity sequential logical circuit.
Cmos latch device and its storage information of trigger are with volatibility, i.e. loss of data after closing power supply, it is therefore desirable to
Moment keeps the connection of power supply and leads to biggish quiescent dissipation.In the present invention, due to natural non-volatile of magnetic storage, i.e.,
Make to power off, currently stored data result will not be lost.Therefore, compared to traditional cmos latch and trigger, this hair
Bright quiescent dissipation will substantially reduce.
Detailed description of the invention
Fig. 1 is the latch structure schematic diagram provided in an embodiment of the present invention based on magnetic Skyrmion.
Fig. 2 is the latch timing waveform provided in an embodiment of the present invention based on magnetic Skyrmion.
Fig. 3 is the trigger structure schematic diagram provided in an embodiment of the present invention based on magnetic Skyrmion.
Fig. 4 is the trigger timing waveform provided in an embodiment of the present invention based on magnetic Skyrmion.
Fig. 5 is the latch device control principle provided in an embodiment of the present invention based on magnetic Skyrmion.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to embodiments, to the present invention
It is further described.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to limit
The present invention.
Traditional cmos latch device with trigger is built by multiple cmos logic gates, needs to apply to a large amount of crystalline substance
Body pipe causes its occupied area larger.
Cmos latch device and its storage information of trigger are with volatibility, i.e. loss of data after closing power supply, the prior art
It needs the connection for keeping power supply constantly and leads to biggish quiescent dissipation.
In view of the problems of the existing technology, the present invention provides a kind of latch based on magnetic Skyrmion and triggerings
Device and control method, are with reference to the accompanying drawing explained in detail the present invention.
As Figure 1-Figure 2, the latch provided in an embodiment of the present invention based on magnetic Skyrmion is heavy metal HM layers
With ferromagnetic FM layers of double-layer structure, ferroelectric layer or dielectric are provided in the middle part of HM layers of heavy metal and ferromagnetic FM layers of double-layer structure
Layer, as enable end E.The double-layer structure right end that HM layers and ferromagnetic FM layers of heavy metal places magnetic tunnel junction MTJ as output end
MTJ is placed as reversed-phase output in Q, the double-layer structure left end that HM layers and ferromagnetic FM layers of heavy metal
Heavy metal layer horizontal direction one terminates input signal D, and the other end is grounded GND.
In embodiments of the present invention, preset magnetism Skyrmion in ferromagnetic layer, and magnetic anisotropy is gradient in ferromagnetic layer
Anisotropy, magnetic anisotropy constant linear increment along its length.
In embodiments of the present invention, latch is having a size of 40nm × 80nm.
As Figure 3-Figure 4, the trigger provided in an embodiment of the present invention based on magnetic Skyrmion is provided with
Main latch and from latch.
It the main latch and is cascaded from latch, the output end of main latch connects with from the input terminal of latch
It connects, constitutes master-slave mode d type flip flop.
In embodiments of the present invention, the control method of the latch provided by the invention based on magnetic Skyrmion includes:
When not applying voltage E=0 on the E of enable end, by applying voltage to input terminal D, controls magnetic Skyrmion and exist
Position in ferromagnetic layer.
When input terminal D not being applied or being applied the voltage D=0 lower than threshold value, spontaneous is moved to by magnetic Skyrmion
Ferromagnetic layer left end, reversed-phase outputLower section, state are the most low state of total magnetic property.
When applying the voltage D=1 for being higher than threshold value to input terminal D, the electric current in introducing face in heavy metal layer generates spin rail
Skyrmion in road torque SOT driving ferromagnetic layer is moved to below output end Q.
In embodiments of the present invention, the method that output end Q is used to detect Skyrmion includes: to read electricity by applying to MTJ
Stream reads its tunnel magneto resistance TMR.
Low resistance state is presented when not detecting Skyrmion below output end Q, exports low level Q=0, while Si Geming
Son will be located at reversed-phase outputLower section,
High-impedance state is presented when detecting Skyrmion below output end Q, exports high level Q=1, meanwhile,
In embodiments of the present invention, when applying voltage on the E of enable end, E=1 modifies the magnetic of controlled area respectively to different
Property constant, enable the region magnetic anisotropy to increase to form high-energy potential barrier, block Skyrmion in output end Q and anti-phase output
EndMovement between lower section.When D=0 or D=1, Q andIt remains unchanged.
In embodiments of the present invention, the control method of the latch provided by the invention based on magnetic Skyrmion includes:
When clock signal CP is low level, main latch is opened, and is closed from latch, realizes input terminal to main latch
The data of output end are transmitted.
When CP rising edge arrives, main latch is closed, and is opened from latch, is applied in the output end of main latch and is read electricity
Pulse is flowed, main latch output end voltage signal is obtained and passes to the input terminal from latch, main latch output end voltage
The height of signal determines the height of the magnetoelectricity resistance state stored from latch outputs.
In embodiments of the present invention, latch is having a size of 40nm × 80nm.
Below with reference to specific example, the invention will be further described.
Example 1
The present invention is based on the latch of magnetic Skyrmion:
Based on the latch of magnetic Skyrmion, feature is on the double-layer structure of heavy metal (HM) layer and ferromagnetic (FM) layer,
A ferroelectric layer or dielectric layer is arranged as enable end E in middle part, and right end places a magnetic tunnel junction (Magnetic Tunnel
Junction, MTJ) it is used as output end Q, a MTJ is placed as reversed-phase output in left endHeavy metal layer horizontal direction one
Input signal D is terminated, the other end is grounded (GND).A preset magnetic Skyrmion in ferromagnetic layer, and in ferromagnetic layer magnetic respectively to different
Property be gradient anisotropy, i.e. magnetic anisotropy constant linear increment along its length.(as shown in Figure 1).
In this case, when not applying voltage (E=0) on the E of enable end, by applying voltage, control to input terminal D
Position of the magnetic Skyrmion in ferromagnetic layer: magnetic when input terminal D not being applied or applied the voltage (D=0) lower than threshold value
Spontaneous is moved to ferromagnetic layer left end, reversed-phase output by SkyrmionLower section, the state are the most low state of total magnetic property.When right
Input terminal D applies the voltage (D=1) for being higher than threshold value, and the electric current in introducing face in heavy metal layer generates spin rail force square
Skyrmion in (Spin Orbit Torque, SOT) driving ferromagnetic layer is moved to below output end Q.
Output end Q is for detecting Skyrmion: reading its tunnel magneto resistance (Tunneling by applying read current to MTJ
Magneto-Resistance, TMR), low resistance state is presented when not detecting Skyrmion below output end Q, exports low electricity
Flat (Q=0), Skyrmion will be located at reversed-phase output at the same timeLower sectionThe detection below output end Q
When to Skyrmion, Q=1,
When applying voltage (E=1) on the E of enable end, the magnetic anisotropy constant of controlled area will be modified, make its increase
High-energy potential barrier is formed, blocks Skyrmion in output end Q and reversed-phase outputMovement between lower section.At this point, no matter D=
0 or D=1, Q andIt remains unchanged.(as shown in Figure 2).
Latch function based on magnetic Skyrmion such as following table.
Latch function table based on magnetic Skyrmion
Example 2
Trigger based on magnetic Skyrmion of the invention: two latch cascade, it can be achieved that master-slave mode D
Trigger.The output end of previous latch (main latch) is connect with the input terminal of the latter latch (from latch).
(as shown in Figure 3).
When clock signal (CP) is low level, main latch is opened, and is closed from latch, realizes that D is defeated to main latch
The data of outlet are transmitted.Apply read current pulse (J) when CP rising edge arrives, while in the output end of main latch, obtains
Main latch output end voltage signal simultaneously passes to input terminal from latch, determines the output Q from latch.(such as Fig. 4 institute
Show).
Trigger function based on magnetic Skyrmion such as following table.
Trigger function table based on magnetic Skyrmion
Below with reference to specific experiment, the invention will be further described.
As shown in figure 5, the latch device control principle of the invention based on magnetic Skyrmion.This magnetic lattice in ferromagnetic layer
Micromagnetics simulation result of the pine torch position under input signal D and enable signal E control is as shown in the figure.It can be seen that when enabled
When not applying voltage (E=0) on the E of end, by applying voltage to input terminal D, position of the magnetic Skyrmion in ferromagnetic layer is controlled
Set: when applying the voltage (D=1) for being higher than threshold value to input terminal D, it is (corresponding that magnetic Skyrmion will be driven to ferromagnetic layer right end
Export Q=1).When input terminal D not being applied or applied the voltage (D=0) lower than threshold value, magnetic Skyrmion is by spontaneous shifting
Move ferromagnetic layer left end (corresponding output Q=0).When applying voltage (E=1) on the E of enable end, the magnetic of controlled area will be modified
Anisotropy constant enables the magnetic anisotropy of controlled area to increase to form high-energy potential barrier, block Skyrmion in left end and
Movement between right end.At this point, no matter D=0 or D=1, the position of Skyrmion remains unchanged.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (9)
1. a kind of control method of the latch based on magnetic Skyrmion, which is characterized in that described based on magnetic Skyrmion
The control method of latch include:
When not applying voltage E=0 on the E of enable end, by applying voltage to input terminal D, magnetic Skyrmion is controlled ferromagnetic
Position in layer；And magnetic anisotropy is gradient anisotropy in ferromagnetic layer, magnetic anisotropy constant is linearly passed along its length
Increase；
When input terminal D not being applied or being applied the voltage D=0 lower than threshold value, magnetic Skyrmion is ferromagnetic by spontaneous being moved to
Layer left end, reversed-phase outputLower section, state are the most low state of total magnetic property；
When applying the voltage D=1 for being higher than threshold value to input terminal D, the electric current in introducing face in heavy metal layer generates spin rail force
Skyrmion in square SOT driving ferromagnetic layer is moved to below output end Q.
2. the control method of the latch as described in claim 1 based on magnetic Skyrmion, which is characterized in that output end Q
Method for detecting Skyrmion includes: to read its tunnel magneto resistance TMR by applying read current to MTJ；
Low resistance state is presented when not detecting Skyrmion below output end Q, exports low level Q=0, while Skyrmion will
Positioned at reversed-phase outputLower section,
High-impedance state is presented when detecting Skyrmion below output end Q, exports high level Q=1, meanwhile,
3. the control method of the latch as described in claim 1 based on magnetic Skyrmion, which is characterized in that when enabled
When holding application voltage on E, E=1 modifies the magnetic anisotropy constant of controlled area, and the region magnetic anisotropy is enable to increase shape
At high-energy potential barrier, block Skyrmion in output end Q and reversed-phase outputMovement between lower section；When D=0 or D=1, Q
AndIt remains unchanged.
4. a kind of control method for implementing the latch described in claim 1 based on magnetic Skyrmion based on this magnetic lattice
The latch of pine torch, which is characterized in that the latch based on magnetic Skyrmion is using heavy metal HM layers and FM layers ferromagnetic
Double-layer structure, ferroelectric layer or dielectric layer are provided in the middle part of HM layers of heavy metal and ferromagnetic FM layer of double-layer structure, as enabling
Hold E；HM layers of heavy metal and ferromagnetic FM layer of double-layer structure right end placement magnetic tunnel junction MTJ are as output end Q, and HM layers of heavy metal
MTJ is placed as reversed-phase output in double-layer structure left end with ferromagnetic FM layers
Heavy metal layer horizontal direction one terminates input signal D, and the other end is grounded GND.
5. the latch as claimed in claim 4 based on magnetic Skyrmion, which is characterized in that in ferromagnetic layer it is preset it is magnetic this
Lattice pine torch.
6. a kind of trigger for carrying the latch based on magnetic Skyrmion described in claim 1, which is characterized in that the base
It is provided in the trigger of magnetic Skyrmion
Main latch and from latch；
It the main latch and is cascaded from latch, the output end of main latch is connect with the input terminal from latch, structure
At master-slave mode d type flip flop.
7. a kind of control method of the latch as claimed in claim 6 based on magnetic Skyrmion, which is characterized in that the base
Include: in the control method of the latch of magnetic Skyrmion
When clock signal CP is low level, main latch is opened, and is closed from latch, realizes that input terminal is exported to main latch
The data at end are transmitted；
When CP rising edge arrives, main latch is closed, and is opened from latch, applies read current arteries and veins in the output end of main latch
Punching obtains main latch output end voltage signal and passes to the input terminal from latch, main latch output end voltage signal
Height determine the height of magnetoelectricity resistance state stored from latch outputs.
8. memory element in a kind of sequential logical circuit for carrying the latch based on magnetic Skyrmion described in claim 1.
9. memory element in a kind of sequential logical circuit for carrying the trigger based on magnetic Skyrmion described in claim 6.
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