CN110205586A - A kind of method that physical vaporous deposition prepares black silicon carbide chrome-silicon insulated compound coating - Google Patents
A kind of method that physical vaporous deposition prepares black silicon carbide chrome-silicon insulated compound coating Download PDFInfo
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- CN110205586A CN110205586A CN201910546954.5A CN201910546954A CN110205586A CN 110205586 A CN110205586 A CN 110205586A CN 201910546954 A CN201910546954 A CN 201910546954A CN 110205586 A CN110205586 A CN 110205586A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0015—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterized by the colour of the layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0635—Carbides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
Abstract
The invention discloses a kind of methods that physical vaporous deposition prepares black silicon carbide chrome-silicon insulated compound coating comprising oil removing cleaning step, bottom preparation step, transition buffer layer preparation step, the wear-resisting film layer preparation step of stiffened, color insulating layer preparation step, cooling step of coming out of the stove；Wherein, oil removing cleaning step includes general oil-removing cleaning agent solution soaking and washing processing step, ultrasonic cleaning processing step, wide slow moving water-removal processing step, baking procedure in 100 DEG C of ultrapure waters in alcohol.It is designed by above-mentioned processing step, physical vaporous deposition of the invention prepare black silicon carbide chrome-silicon composite coating method it is prepared made of black silicon carbide chrome-silicon composite coating have the advantages that corrosion resistance by force, good in oxidation resistance, it is exactly non-conductive with insulating properties that it, which is different from common black film layer, simultaneously, meet the requirement of product insulation performance well, application tool and extensive prospect in 3C Product.
Description
Technical field
The present invention relates to the black technology fields PVD more particularly to a kind of physical vaporous deposition to prepare black silicon carbide
The method of chrome-silicon insulated compound coating.
Background technique
Currently, various electronic products high speed development, dog-eat-dog, requirement of the consumer to product are not only quality mistake
Firmly, durable, it is also particularly strong to the high-end fashion of appearance requirement, lucuriant in design, attractive property requirements.
It should further be noted that film layer is poor in terms of insulation performance for traditional PVD black technique
's.So, it is necessary to existing PVD black technique is improved.
Summary of the invention
The purpose of the present invention is to solve the shortcomings of the prior art and providing a kind of physical vaporous deposition preparation black carbon
Change the method for chrome-silicon insulated compound coating, which prepares the method institute of black silicon carbide chrome-silicon insulated compound coating
The black silicon carbide chrome-silicon insulated compound coating being prepared is maximum outside the performances such as rub resistance in addition to traditional corrosion-resistant
The advantages of be insulation, can satisfy 3C Product in non-conductive performance requirement, adapt to the needs of novel product.
In order to achieve the above objectives, the present invention is achieved through the following technical solutions.
A kind of method that physical vaporous deposition prepares black silicon carbide chrome-silicon insulated compound coating includes following technique step
Suddenly, specific:
A, oil removing is cleaned:
A1, the product processed will be needed to be placed in progress soaking and washing processing in general oil-removing cleaning agent solution；
A2, will by treated product the is placed in progress ultrasonic cleaning processing in alcohol of general oil-removing cleaning agent soaking and washing,
The time of ultrasonic cleaning processing is 3-8 minutes；
A3, will be by ultrasonic cleaning treated product is placed in progress wide slow moving water-removal processing in ultrapure water, ultrapure water is 100 DEG C
Hot water；
A4, will by ultrapure water wide slow moving water-removal, treated that product is placed in baking oven carries out baking processing, baking oven uses 110-180
DEG C circulated air is toasted, and the time for toasting processing is 30-50 minutes；After product is toasted in baking oven and is disposed, it will produce
Product remove baking oven and cooled to room temperature；
B, prepared by bottom:
B1, the product for handling and being cooled to room temperature through overbaking is placed in vacuum drying oven, starting vacuum evacuation device is vacuumized
It handles and the vacuum degree inside vacuum drying oven is made to reach 0.1Pa, the heating device of vacuum drying oven is then opened, when vacuum furnace interior
Temperature starts timing constant temperature 35-55 minutes after reaching 200 DEG C, and constant temperature time is closed the heating device of vacuum drying oven and stopped after reaching
Only heat；
B2, continue start vacuum evacuation device carry out vacuumize process, until vacuum drying oven inside vacuum degree reach 0.5-0.8 ×
10-3Pa, then starts argon flow controller and toward the argon gas for being passed through 60-100SCCM inside vacuum drying oven, so that in vacuum drying oven
The vacuum degree in portion rises to 0.15Pa；
B3, grid bias power supply, Cr arc target power supply are successively opened, the voltage of grid bias power supply is set as 220-300V, Cr arc target power supply
Electric current is set as 50-65A, closes arc target power supply after product ion bombards 5-8 minutes, product surface deposits Cr metal bottom at this time
Layer；
C, prepared by transition buffer layer:
C1, starting argon flow controller and the argon gas that 200-250SCCM is passed through in vacuum drying oven, so that inside vacuum drying oven
Vacuum degree rises to 0.4-0.8Pa；
C2, the voltage of grid bias power supply is set as 100-150V, and opens Cr column target intermediate frequency power supply, the electricity of Cr column target intermediate frequency power supply
Stream is set as 25-35A, and after product ion bombards 15-25 minutes, product is in deposition Cr transition zone on Cr metal back layer；
C3, after product on Cr metal back layer deposit Cr transition zone after, open Si column target intermediate frequency power supply, Si column target intermediate frequency power supply
Electric current is set as 10-20A, bombards after ten minutes in product ion, and product deposits Cr and Si mixed layer in Cr transition layer surface, with
It is prepared into buffer layer；
D, the wear-resisting film layer preparation of stiffened:
D1, argon flow controller and acetylene flow controller are opened, 200-300SCCM argon gas is passed through inside vacuum drying oven and led to
Enter 80-150SCCM acetylene, so that the vacuum degree inside vacuum drying oven rises to 0.45-0.5Pa；
D2, the electric current of Cr arc target power supply is set as to 25-35A and the electric current of Si column target intermediate frequency power supply is set as 10-20A, together
When the voltage of grid bias power supply is set as 80-100V；Product deposits CrC single layer when turning to Cr target after completing above-mentioned movement,
Product deposits SiC single layer when turning to Si target, so that CrC single layer and SiC single layer alternating deposit be made to form stiffened wearing layer, deposition
Time is 120-150 minutes；
E, prepared by color insulating layer:
E1, starting argon flow controller, acetylene flow controller, and toward be passed through inside vacuum drying oven 200-300SCCM argon gas with
And the acetylene of 250-350SCCM, so that the vacuum degree inside vacuum drying oven rises to 0.2-0.8Pa；
E2, the electric current of Cr arc target power supply is set as to 20-30A, and the electric current of Si column target intermediate frequency power supply is set as 10-20A, and
The voltage of grid bias power supply is set as -60--110V simultaneously, complete after above-mentioned movement will on product alternating deposit CrC color
Single layer and SiC color insulating monolayer, and then blend color insulating layer is formed, sedimentation time is 60-80 minutes；
F, cooling is come out of the stove:
After f1, color layers to be mixed deposition, W column target intermediate frequency power supply, Cr arc target power supply, grid bias power supply are successively closed, and close
Close argon flow controller, acetylene flow controller vacuum evacuation device；
F2, after the completion of above-mentioned closing motion, open the fire door of vacuum drying oven and carry out enabling deflation, then by the product after processing
Taking-up is placed in progress natural cooling at aeration-drying.
Wherein, in the step a1, the general oil-removing cleaning agent mass concentration in the general oil-removing cleaning agent solution is
5%-10%。
Wherein, in the step a1, the time of general oil-removing cleaning agent solution soaking and washing processing is 5-10 minutes.
The invention has the benefit that a kind of physical vaporous deposition of the present invention prepares the insulation of black silicon carbide chrome-silicon
The method of composite coating comprising oil removing cleaning step, bottom preparation step, transition buffer layer preparation step, stiffened wear-resistant membrane
Layer preparation step, color insulating layer preparation step, cooling step of coming out of the stove；Wherein, oil removing cleaning step includes that general oil removing is clear
Lotion solution soaking and washing processing step, in alcohol ultrasonic cleaning processing step, in 100 DEG C of ultrapure waters at wide slow moving water-removal
Manage step, baking procedure.It is designed by above-mentioned processing step, it is exhausted that physical vaporous deposition of the invention prepares black silicon carbide chrome-silicon
Black silicon carbide chrome-silicon insulated compound coating made of the method for edge composite coating is prepared has corrosion-resistant, the performances such as rub resistance
Outside, its biggest advantage is that insulation, can satisfy 3C Product in non-conductive performance requirement, adapt to the needs of novel product.
Specific embodiment
Below with reference to specific embodiment, the present invention will be described.
A kind of method that physical vaporous deposition prepares black silicon carbide chrome-silicon insulated compound coating includes following technique step
Suddenly, specific:
A, oil removing is cleaned:
A1, the product processed will be needed to be placed in progress soaking and washing processing in general oil-removing cleaning agent solution；
A2, will by treated product the is placed in progress ultrasonic cleaning processing in alcohol of general oil-removing cleaning agent soaking and washing,
The time of ultrasonic cleaning processing is 3-8 minutes；
A3, will be by ultrasonic cleaning treated product is placed in progress wide slow moving water-removal processing in ultrapure water, ultrapure water is 100 DEG C
Hot water；
A4, will by ultrapure water wide slow moving water-removal, treated that product is placed in baking oven carries out baking processing, baking oven uses 110-180
DEG C circulated air is toasted, and the time for toasting processing is 30-50 minutes；After product is toasted in baking oven and is disposed, it will produce
Product remove baking oven and cooled to room temperature；
B, prepared by bottom:
B1, the product for handling and being cooled to room temperature through overbaking is placed in vacuum drying oven, starting vacuum evacuation device is vacuumized
It handles and the vacuum degree inside vacuum drying oven is made to reach 0.1Pa, the heating device of vacuum drying oven is then opened, when vacuum furnace interior
Temperature starts timing constant temperature 35-55 minutes after reaching 200 DEG C, and constant temperature time is closed the heating device of vacuum drying oven and stopped after reaching
Only heat；
B2, continue start vacuum evacuation device carry out vacuumize process, until vacuum drying oven inside vacuum degree reach 0.5-0.8 ×
10-3Pa, then starts argon flow controller and toward the argon gas for being passed through 60-100SCCM inside vacuum drying oven, so that in vacuum drying oven
The vacuum degree in portion rises to 0.15Pa；
B3, grid bias power supply, Cr arc target power supply are successively opened, the voltage of grid bias power supply is set as 220-300V, Cr arc target power supply
Electric current is set as 50-65A, closes arc target power supply after product ion bombards 5-8 minutes, product surface deposits Cr metal bottom at this time
Layer；
C, prepared by transition buffer layer:
C1, starting argon flow controller and the argon gas that 200-250SCCM is passed through in vacuum drying oven, so that inside vacuum drying oven
Vacuum degree rises to 0.4-0.8Pa；
C2, the voltage of grid bias power supply is set as 100-150V, and opens Cr column target intermediate frequency power supply, the electricity of Cr column target intermediate frequency power supply
Stream is set as 25-35A, and after product ion bombards 15-25 minutes, product is in deposition Cr transition zone on Cr metal back layer；
C3, after product on Cr metal back layer deposit Cr transition zone after, open Si column target intermediate frequency power supply, Si column target intermediate frequency power supply
Electric current is set as 10-20A, bombards after ten minutes in product ion, and product deposits Cr and Si mixed layer in Cr transition layer surface, with
It is prepared into buffer layer；
D, the wear-resisting film layer preparation of stiffened:
D1, argon flow controller and acetylene flow controller are opened, 200-300SCCM argon gas is passed through inside vacuum drying oven and led to
Enter 80-150SCCM acetylene, so that the vacuum degree inside vacuum drying oven rises to 0.45-0.5Pa；
D2, the electric current of Cr arc target power supply is set as to 25-35A and the electric current of Si column target intermediate frequency power supply is set as 10-20A, together
When the voltage of grid bias power supply is set as 80-100V；Product deposits CrC single layer when turning to Cr target after completing above-mentioned movement,
Product deposits SiC single layer when turning to W target, so that CrC single layer and SiC single layer alternating deposit be made to form stiffened wearing layer, deposition
Time is 120-150 minutes；
E, prepared by color insulating layer:
E1, starting argon flow controller, acetylene flow controller, and toward be passed through inside vacuum drying oven 200-300SCCM argon gas with
And the acetylene of 250-350SCCM, so that the vacuum degree inside vacuum drying oven rises to 0.2-0.8Pa；
E2, the electric current of Cr arc target power supply is set as to 20-30A, and the electric current of Si column target intermediate frequency power supply is set as 10-20A, and
The voltage of grid bias power supply is set as -60--110V simultaneously, complete after above-mentioned movement will on product alternating deposit CrC color
Single layer and SiC color insulating monolayer, and then blend color insulating layer is formed, sedimentation time is 60-80 minutes；
F, cooling is come out of the stove:
After f1, color layers to be mixed deposition, Si column target intermediate frequency power supply, Cr arc target power supply, grid bias power supply are successively closed, and close
Close argon flow controller, acetylene flow controller vacuum evacuation device；
F2, after the completion of above-mentioned closing motion, open the fire door of vacuum drying oven and carry out enabling deflation, then by the product after processing
Taking-up is placed in progress natural cooling at aeration-drying.
It should further be noted that the general oil-removing cleaning agent matter in the step a1, in the general oil-removing cleaning agent solution
Amount concentration is 5%-10%；In addition, the time of general oil-removing cleaning agent solution soaking and washing processing is 5-10 points in the step a1
Clock.
It is designed by above-mentioned processing step, physical vaporous deposition of the invention prepares the painting of black silicon carbide chrome-silicon insulated compound
The method of layer is added to nonmetallic silicon in chromium carbide film layer, and in such a way that gradient is excessive, so that film layer is had nanometer more
Layer structure, to solve the disadvantage of conventional black film layer insulation performance difference.So prepared by physical vaporous deposition of the invention
The strong, antioxygen with corrosion resistance of black silicon carbide chrome-silicon composite coating made of the method for black silicon carbide chrome-silicon composite coating is prepared
The good advantage of the property changed, at the same its be different from common black film layer be exactly it is non-conductive with insulating properties, it is exhausted to meet product well
Edge performance requirement, application tool and extensive prospect in 3C Product.
The above is only a preferred embodiment of the present invention, for those of ordinary skill in the art, according to the present invention
Thought, there will be changes in the specific implementation manner and application range, and the content of the present specification should not be construed as to the present invention
Limitation.
Claims (3)
1. a kind of method that physical vaporous deposition prepares black silicon carbide chrome-silicon insulated compound coating comprising there is following technique to walk
Suddenly, specific:
A, oil removing is cleaned:
A1, the product processed will be needed to be placed in progress soaking and washing processing in general oil-removing cleaning agent solution；
A2, will by treated product the is placed in progress ultrasonic cleaning processing in alcohol of general oil-removing cleaning agent soaking and washing,
The time of ultrasonic cleaning processing is 3-8 minutes；
A3, will be by ultrasonic cleaning treated product is placed in progress wide slow moving water-removal processing in ultrapure water, ultrapure water is 100 DEG C
Hot water；
A4, will by ultrapure water wide slow moving water-removal, treated that product is placed in baking oven carries out baking processing, baking oven uses 110-180
DEG C circulated air is toasted, and the time for toasting processing is 30-50 minutes；After product is toasted in baking oven and is disposed, it will produce
Product remove baking oven and cooled to room temperature；
B, prepared by bottom:
B1, the product for handling and being cooled to room temperature through overbaking is placed in vacuum drying oven, starting vacuum evacuation device is vacuumized
It handles and the vacuum degree inside vacuum drying oven is made to reach 0.1Pa, the heating device of vacuum drying oven is then opened, when vacuum furnace interior
Temperature starts timing constant temperature 35-55 minutes after reaching 200 DEG C, and constant temperature time is closed the heating device of vacuum drying oven and stopped after reaching
Only heat；
B2, continue to start vacuum evacuation device progress vacuumize process, until the vacuum degree inside vacuum drying oven reaches 0.5-0.8 × 10-3Pa, then starts argon flow controller and toward the argon gas for being passed through 60-100SCCM inside vacuum drying oven, so that inside vacuum drying oven
Vacuum degree rise to 0.15Pa；
B3, grid bias power supply, Cr arc target power supply are successively opened, the voltage of grid bias power supply is set as 220-300V, Cr arc target power supply
Electric current is set as 50-65A, closes arc target power supply after product ion bombards 5-8 minutes, product surface deposits Cr metal bottom at this time
Layer；
C, prepared by transition buffer layer:
C1, starting argon flow controller and the argon gas that 200-250SCCM is passed through in vacuum drying oven, so that inside vacuum drying oven
Vacuum degree rises to 0.4-0.8Pa；
C2, the voltage of grid bias power supply is set as 100-150V, and opens Cr column target intermediate frequency power supply, the electricity of Cr column target intermediate frequency power supply
Stream is set as 25-35A, and after product ion bombards 15-25 minutes, product is in deposition Cr transition zone on Cr metal back layer；
C3, after product on Cr metal back layer deposit Cr transition zone after, open Si column target intermediate frequency power supply, Si column target intermediate frequency power supply
Electric current is set as 10-20A, bombards after ten minutes in product ion, and product deposits Cr and Si mixed layer in Cr transition layer surface, with
It is prepared into buffer layer；
D, the wear-resisting film layer preparation of stiffened:
D1, argon flow controller and acetylene flow controller are opened, 200-300SCCM argon gas is passed through inside vacuum drying oven and led to
Enter 80-150SCCM acetylene, so that the vacuum degree inside vacuum drying oven rises to 0.45-0.5Pa；
D2, the electric current of Cr arc target power supply is set as to 25-35A and the electric current of Si column target intermediate frequency power supply is set as 10-20A, together
When the voltage of grid bias power supply is set as 80-100V；Product deposits CrC single layer when turning to Cr target after completing above-mentioned movement,
Product deposits SiC single layer when turning to Si target, so that CrC single layer and SiC single layer alternating deposit be made to form stiffened wearing layer, deposition
Time is 120-150 minutes；
E, prepared by color insulating layer:
E1, starting argon flow controller, acetylene flow controller, and toward be passed through inside vacuum drying oven 200-300SCCM argon gas with
And the acetylene of 250-350SCCM, so that the vacuum degree inside vacuum drying oven rises to 0.2-0.8Pa；
E2, the electric current of Cr arc target power supply is set as to 20-30A, and the electric current of Si column target intermediate frequency power supply is set as 10-20A, and
The voltage of grid bias power supply is set as -60--110V simultaneously, complete after above-mentioned movement will on product alternating deposit CrC color
Single layer and SiC color insulating monolayer, and then blend color insulating layer is formed, sedimentation time is 60-80 minutes；
F, cooling is come out of the stove:
After f1, color layers to be mixed deposition, Si column target intermediate frequency power supply, Cr arc target power supply, grid bias power supply are successively closed, and close
Close argon flow controller, acetylene flow controller vacuum evacuation device；
F2, after the completion of above-mentioned closing motion, open the fire door of vacuum drying oven and carry out enabling deflation, then by the product after processing
Taking-up is placed in progress natural cooling at aeration-drying.
2. the side that a kind of physical vaporous deposition according to claim 1 prepares black silicon carbide chrome-silicon insulated compound coating
Method, it is characterised in that: in the step a1, the general oil-removing cleaning agent mass concentration in the general oil-removing cleaning agent solution is
5%-10%。
3. the method that a kind of physical vaporous deposition according to claim 1 prepares black silicon carbide tungsten composite coating, special
Sign is: in the step a1, the time of general oil-removing cleaning agent solution soaking and washing processing is 5-10 minutes.
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| CN114182215A (en) * | 2021-12-14 | 2022-03-15 | 安徽昊方机电股份有限公司 | Method for depositing TiCrC coating on surface of titanium alloy material |
| CN115433902A (en) * | 2022-07-27 | 2022-12-06 | 精研（东莞）科技发展有限公司 | Golden composite coating prepared by physical vapor deposition method and preparation process thereof |
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| CN108265291A (en) * | 2018-01-30 | 2018-07-10 | 中国科学院宁波材料技术与工程研究所 | A kind of carbon-base coating of soft matrix surface and preparation method thereof |
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| CN114182214A (en) * | 2021-12-14 | 2022-03-15 | 安徽昊方机电股份有限公司 | Method for depositing AlCrCN coating on surface of tungsten-copper alloy material |
| CN114182215A (en) * | 2021-12-14 | 2022-03-15 | 安徽昊方机电股份有限公司 | Method for depositing TiCrC coating on surface of titanium alloy material |
| CN115433902A (en) * | 2022-07-27 | 2022-12-06 | 精研（东莞）科技发展有限公司 | Golden composite coating prepared by physical vapor deposition method and preparation process thereof |
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Application publication date: 20190906 |