CN110197021A - A method of microwave integrated circuit on-chip inductor and transformer are realized with transmission line - Google Patents
A method of microwave integrated circuit on-chip inductor and transformer are realized with transmission line Download PDFInfo
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- CN110197021A CN110197021A CN201910425022.5A CN201910425022A CN110197021A CN 110197021 A CN110197021 A CN 110197021A CN 201910425022 A CN201910425022 A CN 201910425022A CN 110197021 A CN110197021 A CN 110197021A
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Abstract
A method of microwave integrated circuit on-chip inductor and transformer are realized with transmission line, comprising the following steps: S1, according to the circuit diagram of microwave integrated circuit product to be produced determines the inductance value of the inductor or transformer in circuit；S2, according to the characteristic impedance of used transmission line, calculate and the equivalent length of transmission line of inductance value；S3, to show that the transmission line of equivalent length replaces the inductor in circuit or transformer to determine the domain of product through step S2, the shape arrangement and equivalent length that the transmission line in domain is wherein adjusted by circuit simulation, so that the equivalent inductance value and circuit trace of the transmission line meets scheduled performance indicator.Compared to using conventional spiral inductance, the present invention has greater flexibility using transmission line inductance in circuit layout, can effectively reduce the length of interconnection line in domain, so that the ghost effect that interconnection line introduces is reduced.
Description
Technical field
It is especially a kind of to realize microwave integrated circuit on-chip inductor with transmission line and become the present invention relates to integrated electronic route
The method of depressor.
Background technique
It is set currently based on the low-noise amplifier of microwave and millimeter wave frequency range (such as 24.5GHz-27.5GHz) CMOS technology
In meter, on-chip inductor mostly uses planar spiral inductor, and the area ratio active device of spiral inductance is much larger, if used in circuit
Inductance when being multiple, in order to reduce coupling, need to be spaced a distance between inductance and inductance, and often outside inductance plus one
It encloses protection ring (as shown in Figure 1).The flexibility for needing to limit laying out pattern and chip that the area of inductance is coupled with reduction
The main determining factor of area.A kind of laying out pattern mode of 24GHz low-noise amplifier as shown in Figure 2 (bibliography:
B.Liu, Genhua Chen and Ying Chen, " A 24-GHz single-to-differential LNA for K-
Band receiver applications, " 2016IEEE International Conference on Microwave
And Millimeter Wave Technology (ICMMT), Beijing, 2016, pp.511-513.), which uses
Five rectangular inductance, in order to reduce influence of the mutual inductance to circuit, inductance and other lines of surrounding are at intervals.Inductance
Position determine after, part line needs to connect around inductance, and it is too long to cause interconnection line, can introduce parasitic inductance, resistance, shadow
Ring the performance of circuit.
The schematic diagram of low-noise amplifier is to need to use 9 inductance shown in Fig. 3, is drawn using octagonal spiral inductance
Domain out is as shown in figure 4, the area of domain is about 980 μm * 450 μm, and the length of power supply line and ground connection interconnection line is big in domain
In 700 μm, and it is difficult to adjust.
Summary of the invention
It is a primary object of the present invention to overcome the deficiencies of the prior art and provide a kind of integrated electricity of transmission line realization microwave
The method of road on-chip inductor and transformer.
To achieve the above object, the invention adopts the following technical scheme:
A method of microwave integrated circuit on-chip inductor and transformer are realized with transmission line, comprising the following steps:
S1, according to the circuit diagram of microwave integrated circuit product to be produced, determine the inductor or transformation in circuit
The inductance value of device；
S2, according to the characteristic impedance of used transmission line, calculate and the equivalent length of transmission line of inductance value；
S3, to show that through step S2, the transmission line of equivalent length replaces inductor or transformer in circuit to determine product
Domain, wherein adjusted by circuit simulation the transmission line in domain shape arrangement and equivalent length so that the transmission
The equivalent inductance value of line and circuit trace meet scheduled performance indicator.
Further:
In step S2, calculate and the equivalent length of transmission line of the inductance value according to the following formula:
Wherein l is the length of transmission line, and L is inductance value, Z0For the characteristic impedance of transmission line, ∈rFor the opposite dielectric of medium
Constant.
The microwave integrated circuit is for working frequency in 24-28GHz, using the integrated circuit of 65nm technique.
In step S3, it is not necessary to transmission line be moved to the safe distance that can ignore mutual inductance, but allow transmission line inductance
The distance between generate coupling, in simulation process, based on the coupled relation between transmission line, optimized according to the influence of coupling
The inductance value and equivalent length of transmission line after coupling adjust shape arrangement and equivalent length of the transmission line in domain accordingly, make
Inductance value after coupling is equivalent to the inductance value determined in step S1 and circuit is made to meet scheduled performance indicator.
In step S3, the coupling between transmission line inductance obtains impedance matrix parameters by emulation, obtains the coupling between inductance
Collaboration number, then calculate the inductance value after considering coupling.
In step S3, following circuit simulation Optimized Iterative is carried out, comprising: first transmission of the first emulation for the first inductor
The inductor models of line, imported into circuit diagram, and other inductors use conventional inductor, optimize the shape of first transmission line
Shape arrangement；Emulation is imported into circuit diagram for the inductor models of the first and second transmission line of the first and second inductor, other
Inductance uses conventional inductor, the shape arrangement of the first and second transmission line of optimization and spacing；Emulation is directed to the first, second and third inductor
The first, second and third transmission line inductor models, imported into circuit diagram, other inductance use conventional inductor, optimization the
One, the shape arrangement and spacing of two, three transmission lines；And so on, Optimized Iterative finally obtains the domain for meeting performance indicator.
During optimizing the shape arrangement and spacing of transmission line, consider shape arrangement to VDD and GND wire length
It influences.
In step S3, allow to replace the distance between transmission line of inductor or transformer in 40 μm.
It is further comprising the steps of:
S4, the domain for meeting performance indicator determined according to step S3, make the microwave integrated circuit product.
The invention has the following beneficial effects:
Compared to using conventional spiral inductance, the present invention is had in circuit layout using transmission line inductance bigger flexible
Property, the length of interconnection line in domain can be effectively reduced, so that the ghost effect that interconnection line introduces is reduced.Further, this hair
The distance between transmission line need not be moved to the safe distance that can ignore mutual inductance by bright method, but allow transmission line inductance
Coupling is generated, using the principle of transformer, inductance and inductance no longer need protection ring and interval larger distance, using between inductance
Mutual inductance adjust the length of inductance in domain, simplify structure, reduce the area of domain, thus also reduce chip face
Product.
Detailed description of the invention
Fig. 1 is planar spiral inductor arrangement schematic diagram；
Fig. 2 is a kind of laying out pattern figure of 24GHz low-noise amplifier；
Fig. 3 is a kind of circuit diagram of low-noise amplifier；
Fig. 4 is the domain for realizing circuit shown in Fig. 3 using conventional octagonal spiral inductance；
Schematic diagram of the Fig. 5 by replacing conventional inductor or transformer in the embodiment of the present invention with transmission line；
Fig. 6 is to obtain the schematic diagram of domain by Optimized Iterative in the embodiment of the present invention；
Fig. 7 and Fig. 8 is the obtained domain example of method according to the embodiment of the present invention；
Fig. 9 is Two-port netwerk Microwave Net.
Specific embodiment
It elaborates below to embodiments of the present invention.It is emphasized that following the description is only exemplary,
The range and its application being not intended to be limiting of the invention.
In one embodiment, a method of realizing microwave integrated circuit on-chip inductor and transformer, packet with transmission line
Include following steps:
S1, according to the circuit diagram of microwave integrated circuit product to be produced, determine the inductor or transformation in circuit
The inductance value of device；
S2, according to the characteristic impedance of used transmission line, calculate and the equivalent length of transmission line of inductance value；
S3, to show that through step S2, the transmission line of equivalent length replaces inductor or transformer in circuit to determine product
Domain, wherein adjusted by circuit simulation the transmission line in domain shape arrangement and equivalent length so that the transmission
The equivalent inductance value of line and circuit trace meet scheduled performance indicator.
In a preferred embodiment, it in step S2, calculates and the equivalent length of transmission line of the inductance value according to the following formula:
Wherein l is the length of transmission line, and L is inductance value, Z0For the characteristic impedance of transmission line, ∈rFor the opposite dielectric of medium
Constant.
In a preferred embodiment, for the microwave integrated circuit be working frequency in 24-28GHz, using TSMC
The integrated circuit of 65nm technique calculates the length of transmission line equivalent with the inductance value using above formula.
In a preferred embodiment, in step S3, it is not necessary to transmission line is moved to the safe distance that can ignore mutual inductance, and
It is that the distance between transmission line inductance is allowed to generate coupling, in simulation process, based on the coupled relation between transmission line, according to
Coupling influence come optimize coupling after transmission line inductance value and equivalent length, accordingly adjust transmission line in domain shape row
Cloth and equivalent length, the inductance value after making coupling are equivalent to the inductance value determined in step S1 and circuit are made to meet scheduled performance
Index.
In a more preferred embodiment, in step S3, the coupling between transmission line inductance obtains impedance matrix by emulation
Parameter obtains the coefficient of coup between inductance, then calculates the inductance value after considering coupling.
In a more preferred embodiment, in step S3, following circuit simulation Optimized Iterative is carried out, comprising: first emulation is directed to
The inductor models of the first transmission line of first inductor, imported into circuit diagram, and other inductors use conventional inductive
Device optimizes the shape arrangement of first transmission line；Emulation is led for the inductor models of the first and second transmission line of the first and second inductor
Enter into circuit diagram, other inductance use conventional inductor, the shape arrangement of the first and second transmission line of optimization and spacing；It is imitative
The inductor models of true the first, second and third transmission line for the first, second and third inductor, imported into circuit diagram, other electricity
Sense uses conventional inductor, the shape arrangement of the first, second and third transmission line of optimization and spacing；And so on, Optimized Iterative is final to be obtained
To the domain for meeting performance indicator.
In a preferred embodiment, during optimizing the shape arrangement and spacing of transmission line, consider shape arrangement pair
The influence of VDD and GND wire length.
In a preferred embodiment, in step S3, allow to replace the distance between transmission line of inductor or transformer to exist
In 40 μm.
In a preferred embodiment, the method also includes following steps:
S4, the domain for meeting performance indicator determined according to step S3, make the microwave integrated circuit product.
Once specific example is combined to illustrate specific design method and advantage of the invention.
Specific design procedure:
1, the inductance value in circuit diagram is determined
For circuit as shown in Figure 3, first carried out with the inductance of the java standard library of TSMC 65nm technique based on circuit diagram
Design, by the inductance value for continuing to optimize the determining required TSMC65 that touches the mark of emulation: L1=465pH, L2=363.69pH,
L3=80pH, L4=402pH, L5=387pH, L6=71pH, L7=432pH, L8=410pH, L9=65pH.
2, TSMC inductance is replaced with transmission line inductance
(1) characteristic impedance of transmission line is determined
According to the technological parameter of TSMC 65nm, dielectric thickness is about 300 μm, and relative dielectric constant is about 3, according to transmission
The estimation formula of line characteristic impedance, the characteristic impedance for obtaining the transmission line for the use of width being 10 μm is about 29.4 ohm.
(2) the equivalent length of transmission line of inductance value is calculated
In frequency PCB circuit design, inductance value is equivalent to the empirical equation of transmission line are as follows:
L is the length of transmission line, and L is inductance value, Z0For the characteristic impedance of transmission line, ∈rIt is normal for the opposite dielectric of medium
Number.
This formula is applied to integrated circuit (TSMC 65nm), and working frequency, in 24-28GHz, inventor is to this warp
It tests formula and amendment is optimized, by simulating, verifying, be by this formula optimization
It is about the accurate estimation in 30 μm that length of transmission line error, which can be obtained,.
The length that L1-L9 is converted to transmission line can be calculated by this formula.
(3) according to laying out pattern, the shape of transmission line is adjusted
If being indicated with the equivalent length of the inductance found out in (2) with straight transmission line, domain arrangement can be made very difficult.?
In design layout, the length of VDD Yu GND line should be shortened as far as possible, for millimeter wave low-noise amplifier LNA, VDD with
The distributed inductance of GND influences it more serious.This makes transmission line need to be bent the flexible position for adapting to VDD and GND
It sets, and this bending may change equivalent inductance value, need to emulate adjustment.
(4) consider coupling
Since every section of transmission line is not isolated existing in domain, there are phase mutual coupling between the transmission line of surrounding
Phenomenon is closed, coupling phenomenon can not avoid completely, can spacing control by the additional protection ring of inductance, between inductance in most layout designs
It restricts and is greater than 150 μm to reduce this coupling.Since required inductance number is more, it is relatively difficult to expand mutual spacing,
In addition to this length of interconnection line between increasing inductance is also resulted in, in this regard, inductance is not moved to by the present invention can ignore mutually
The safe distance of sense.Coupling between transmission line inductance can emulate to obtain impedance matrix parameters by peakview, according to obtaining
The coefficient of coup between inductance calculates the inductance value after considering coupling.
Referring to Fig. 9, with Two-port netwerk Microwave Net, (Microwave Net is on the basis of electromagnetic field analysis, with the analysis of circuit
Microwave component is equivalent to reactance or resistance by method, and waveguide transmission is equivalent to transmission line, by an actual microwave system letter
Turn to Microwave Net) for, Z matrix is known as impedance matrix.
T1 and T2 is the plane of reference of selection in Fig. 9, and I1 and I2 are respectively the total current of two plane of references, and U1 is respectively with U2
The total voltage of two plane of references, selecting I1 and I2 is independent variable.U1 and U2 is dependent variable, then
It can be write as the form of matrix
Wherein,When the face T2 is opened a way, the input impedance of port 1,
When the face T1 is opened a way, the transfger impedance of port 1 is arrived in port 2,
When the face T2 is opened a way, the transfger impedance of port 2 is arrived in port 1,
When the face T1 is opened a way, the input impedance of port 2.
(5) by simulation software Optimized Iterative, the domain for meeting performance indicator is obtained
By step (1) to (4), there is general layout shape, has then started specific since first inductance
Optimization, process are imported into schematic diagram, other electricity as shown in fig. 6, first with the inductor models of the transmission line of peakview emulation L1
The sense inductance of TSMC 65nm in (1), optimizes the shape and inductance value of first inductance L 1；L1 and L2 is emulated with peakview,
It imported into schematic diagram, the inductance of other inductance TSMC 65nm, optimizes the spacing of inductance L 1 and L 2, determine this type shape row
Influence of the cloth to VDD and GND wire length；L1, L2, L3 are put together and emulated with peakview, is imported into schematic diagram,
The inductance of his inductance TSMC 65nm optimizes the spacing of three inductance, determines this type shape arrangement to VDD and GND wire length
Influence ... (and so on).Optimized Iterative obtains last domain.
According to the above method of the present invention, inductance most of in domain is replaced with transmission line, and without making between inductance
Enough safe distances are spaced to reduce coupling, but distance between multiple inductance can be made to consider coupling influence in 40 μm
Optimization transmission line inductance value and equivalent length are gone, the performance indicator that can be approved is similarly obtained.
According to the above method of the present invention, inductance is replaced using transmission line, walks wire shaped is enabled to VDD's and GND
Wire length is small；Whether each inductance value change of the coefficient of coup bring that transmission line spacing distance can be obtained according to emulation meets
Performance determines.
According to the above method of the present invention, transmission line can reduce the connection length to VDD and GND, and cabling is more flexible
And it can satisfy required inductance value.The closer needs of distance consider coupling between inductance, and transformer is also by one group
Magnetic coupling inductance realizes the transformation of voltage etc., and principle is identical.
Example explanation:
It for the inductance 4,5,6,7,8,9 in Fig. 4, is realized with non-closed transmission line as shown in Figure 5, and using change
The principle of depressor, inductance is superimposed, as shown in Figure 7.Wherein the cabling of inductance 4,5,7,8 couples to obtain final multilayer
Superposition.And inductance 6,9 very littles, it is only necessary to more than 100 μm of effective transmission line length, since the length of needs is shorter, away from
Closer from GND, inductance 6,9 and the nested inductance in left side are distant, may not need bending and are directly grounded.
Referring to Fig. 3, Fig. 7 and Fig. 8, based on the domain of the method for the present invention design, brought advantage is obvious: one end is needed
Connect the inductance 2 of VDD, 5,8, one end that flexible transmission line inductance makes them meet VDD concentrates in together；One end is needed to connect
The inductance 3 on ground, 6,9, their ground terminal is equally concentrated.Using transmission line as inductance, cabling will need to connect the concentration of VDD
Together, need to connect concentrating in together for GND, the requirement of specific shape, wiring be not flexible.Similarly, it needs to connect bias voltage
Inductance Isosorbide-5-Nitrae, 7 connect together without around far distance, greatly reduce the length of interconnection line.
In addition, the adjustment of inductance value has two freedom degrees in domain, can by adjusting transmission line length or change
Mutual inductance value between power transformation sense is adjusted, and the adjusting than the spiral inductance of multiturn is simple and convenient.Mutually increased in the same direction using transformer
The length of strong principle, small inductor 3 can reduce, and also reduce the area of domain indirectly, obtained core circuit chip area
(pad disregards) is 541 μm * 790 μm.Simulation result is shown in the input and output of 24.5GHz-27.5GHz low-noise amplifier
The S parameter (S11, S22) at end is respectively less than -10dB, is 17dB with interior maximum gain, and 3 ranks of noise coefficient 3.6dB, input are handed over
Adjusting point is -7.54dBm.
The above content is combine it is specific/further detailed description of the invention for preferred embodiment, cannot recognize
Fixed specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs,
Without departing from the inventive concept of the premise, some replacements or modifications can also be made to the embodiment that these have been described,
And these substitutions or variant all shall be regarded as belonging to protection scope of the present invention.
Claims (9)
1. a kind of method for realizing microwave integrated circuit on-chip inductor and transformer with transmission line, which is characterized in that including following
Step:
S1, according to the circuit diagram of microwave integrated circuit product to be produced, determine inductor in circuit or transformer
Inductance value；
S2, according to the characteristic impedance of used transmission line, calculate and the equivalent length of transmission line of inductance value；
S3, to show that the transmission line of equivalent length replaces the inductor in circuit or transformer to determine the version of product through step S2
Figure, wherein the shape arrangement and equivalent length of the transmission line in domain are adjusted by circuit simulation, so that described transmission line etc.
The inductance value and circuit trace of effect meet scheduled performance indicator.
2. the method as described in claim 1, which is characterized in that in step S2, calculate according to the following formula equivalent with the inductance value
Length of transmission line:
Wherein l is the length of transmission line, and L is inductance value, Z0For the characteristic impedance of transmission line, ∈rIt is normal for the opposite dielectric of medium
Number.
3. method according to claim 2, which is characterized in that the microwave integrated circuit be working frequency 24-28GHz,
Use the integrated circuit of 65nm technique.
4. method as described in any one of claims 1 to 3, which is characterized in that in step S3, allow between transmission line inductance
Distance generates coupling, in simulation process, based on the coupled relation between transmission line, after optimizing coupling according to the influence of coupling
The inductance value and equivalent length of transmission line adjust shape arrangement and equivalent length of the transmission line in domain, after making coupling accordingly
Inductance value be equivalent in step S1 determine inductance value and so that circuit is met scheduled performance indicator.
5. method as claimed in claim 4, which is characterized in that in step S3, the coupling between transmission line inductance passes through emulation
Impedance matrix parameters are obtained, the coefficient of coup between inductance is obtained, then calculate the inductance value after considering coupling.
6. such as the described in any item methods of claim 4 to 5, which is characterized in that in step S3, carry out following circuit simulation optimization
Iteration, comprising: first emulation is imported into circuit diagram for the inductor models of the first transmission line of the first inductor, and its
He uses conventional inductor by inductor, optimizes the shape arrangement of first transmission line；Emulation for the first and second inductor first,
The inductor models of two transmission lines, imported into circuit diagram, other inductance use conventional inductor, the first and second transmission of optimization
The shape of line is arranged and spacing；Emulation is imported for the inductor models of the first, second and third transmission line of the first, second and third inductor
Into circuit diagram, other inductance use conventional inductor, the shape arrangement of the first, second and third transmission line of optimization and spacing；With
This analogizes, and Optimized Iterative finally obtains the domain for meeting performance indicator.
7. such as the described in any item methods of claim 4 to 6, which is characterized in that in the shape arrangement of optimization transmission line and spacing
During, consider the influence that shape is arranged to VDD and GND wire length.
8. such as the described in any item methods of claim 4 to 7, which is characterized in that in step S3, allow to replace inductor or transformation
The distance between transmission line of device is within 40 μm.
9. method as claimed in any one of claims 1 to 8, which is characterized in that further comprising the steps of:
S4, the domain for meeting performance indicator determined according to step S3, make the microwave integrated circuit product.
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| CN103430379A (en) * | 2011-03-16 | 2013-12-04 | 阿尔卡特朗讯 | Phase shifting device |
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| CN105609915A (en) * | 2016-01-26 | 2016-05-25 | 广东工业大学 | Dual-frequency equal-split Wilkinson power divider based on slow wave structure and design method |
| CN105653752A (en) * | 2014-12-05 | 2016-06-08 | 王丽香 | Digital signal impedance match circuit designing method |
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| CN1353459A (en) * | 2000-11-14 | 2002-06-12 | 国际商业机器公司 | Inductor for integrated circuit |
| US6714113B1 (en) * | 2000-11-14 | 2004-03-30 | International Business Machines Corporation | Inductor for integrated circuits |
| CN101246983A (en) * | 2008-03-17 | 2008-08-20 | 南京大学 | Ultra-wideband filter based on simplified left hand transmission line structure |
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