CN110195218A - A kind of microwave CVD nano water-proof combination process - Google Patents
A kind of microwave CVD nano water-proof combination process Download PDFInfo
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- CN110195218A CN110195218A CN201910419611.2A CN201910419611A CN110195218A CN 110195218 A CN110195218 A CN 110195218A CN 201910419611 A CN201910419611 A CN 201910419611A CN 110195218 A CN110195218 A CN 110195218A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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Abstract
A kind of microwave CVD nano water-proof combination process, the following steps are included: the pretreatment of (1) circuit substrate: the pre-treatment of (2) circuit substrate: the vacuum degree of vacuum reaction chamber is evacuated to 20KPa or less by (3), it is placed in the microwave region that frequency is 500-1000GHz, first gas is passed through by 0.5-2L/min, and the vacuum degree for keeping vacuum reaction intracavitary is 10-30K Pa, first gas occurs ionization and forms active ion monomer；It deposits to obtain barrier insulating film layer in surface of circuit substrate；(4) the intracavitary gas of extraction vacuum reaction, then second gas is imported, the pressure for keeping vacuum reaction intracavitary reaches 10-200K Pa；Second gas, which is placed in the microwave region that frequency is 800-1200GHZ, ionizes second gas, is formed in the surface for the barrier insulating film layer that step (3) obtains with a thickness of 10-500nm hydrophobic oleophobic corrosion-resistant finishes；(5) it post-processes: being passed through air to vacuum reaction chamber to standard atmospheric pressure, take out circuit substrate, this microwave CVD technique has high efficiency feature, and sedimentation time only has the half of current process time in industry, and deposition efficiency promotes 2 times or so.
Description
Technical field
The present invention is specifically related to a kind of microwave CVD nano water-proof combination process.
Background technique
Current nano water-proof technique mainly utilizes high frequency or intermediate frequency CVD, uses fluorocarbons as working gas pair
Product (usually circuit board) plated film, the process time of this processing technology is longer, and deposition velocity is slower, liquid medicine or gas
Utilization rate is also relatively low, and the coating uniformity and compactness finally deposited is all poor, and high-grade waterproof is not achieved and dredges
Water.
Summary of the invention
The present invention is to overcome above situation insufficient, it is desirable to provide a kind of technical solution that can solve the above problem.
A kind of microwave CVD nano water-proof combination process, comprising the following steps:
1, a kind of microwave CVD nano water-proof combination process, which comprises the following steps:
(1) pretreatment of circuit substrate: circuit substrate is put into supersonic wave cleaning machine and is cleaned up with neutral cleaners
It is dried afterwards with hot-air, the vacuum reaction that the circuit substrate after after baking is then placed into microwave CVD equipment is intracavitary；
(2) pre-treatment of circuit substrate: being adjusted and keep vacuum reaction is intracavitary in step (1) temperature 25-55 DEG C it
Between, vacuumize process is carried out to vacuum reaction chamber, makes its internal vacuum 50-100KPa, is passed through cleaning treatment gas extremely
70-120KPA is placed in 2-1000S in the microwave region that frequency is 300-700GHz and carries out glow discharge process；
(3) vacuum degree of the vacuum reaction chamber in step (2) Jing Guo glow discharge process is evacuated to 20KPa hereinafter, being placed in
Frequency is to be passed through first gas by 0.5-2L/min, and keep vacuum reaction intracavitary in the microwave region of 500-1000GHz
Vacuum degree is 10-30K Pa, and first gas occurs ionization and forms active ion monomer；It deposits and is hindered in surface of circuit substrate
Used outside insulated film layer；
(4) the intracavitary gas of extraction vacuum reaction, then second gas is imported, the pressure for keeping vacuum reaction intracavitary reaches 10-
200K Pa；Second gas, which is placed in the microwave region that frequency is 800-1200GHZ, ionizes second gas, in step (3)
The surface of obtained barrier insulating film layer is formed with a thickness of 10-500nm hydrophobic oleophobic corrosion-resistant finishes；
(5) it post-processes: being passed through air to vacuum reaction chamber to standard atmospheric pressure, take out circuit substrate.
Preferably, further include the steps that between step (5) and step (6) (7), the step (7) is to repeat step
(3) to step (5), hydrophobic oleophobic corrosion-resistant finishes phase that the barrier insulating film layer for obtaining step (3) and step (5) obtain
Alternating layers, which are stacked with, is made into 2n layers (n=1,2,3 ...), so that it is high to form steam insulating properties height, acid and alkali-resistance, a waterproofing grade
Composite water-proof coating.
Preferably, it is passed through halogen gas 0.1-10L in described (3) step, the active ion monomer with step (3)
It is reacted, and is deposited as thickness in the modified barrier insulating film layer of 100-5000nm on the circuit substrate.
Preferably, the cleaning treatment gas is Ar, O2One of or a variety of mixing.
Preferably, the neutral cleaners are one of ethylene glycol solution or board-washing water or a variety of.
Preferably, the first gas is that dimethylbenzene liquid or the heating vaporization of Parylene powder material are formed.
Preferably, the first gas is one of hydrocarbon (CnHn) or a variety of.
Preferably, the first gas is type siloxane gas, such as HMDSO, HMDSM.
Preferably, the type of the Parylene is c-type, D type, N-type or HT type.
Preferably, the second gas is the fluorocarbons (CnFm) or hydrocarbon by heating vaporization
One of (CnHn) or it is a variety of.
Compared with prior art, the beneficial effects of the present invention are: this microwave CVD technique, has high efficiency feature, deposition
Time only has the half of current process time in industry, and deposition efficiency promotes 2 times or so, uses the efficient film forming work of microwave CVD
Skill, may be implemented all kinds of single layers, multilayer flashing anti-corrosion composite film, and innovation and application is in mobile phone, wrist-watch, bracelet, bluetooth headset,
On the inside PCB of the industrial electronics such as the Intelligent hardwares such as AR, VR and each electric appliances and its components, this technique is first
It is secondary to use microwave deposition film on circuit boards, since the ionization level of microwave is high, liquid medicine or gas used in microwave CVD processing
The utilization rate of body is higher, and coating quality preferably (uniformity and compactness are all higher), can achieve the waterproof of higher level；
Preferably, during the deposition process, it is passed through halogen gas (such as HCL, HF etc.), can be changed on circuit substrate
Property barrier insulating film layer, the material cost of the modified coating is lower the Parylene N powder of low cost (cost close to), but modified
The waterproof effect of coating preferably (waterproof effect close to Parylene C powder, F powder even HT powder).
Specific embodiment
The technical scheme in the embodiments of the invention will be clearly and completely described below, it is clear that described reality
Applying example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field
Those of ordinary skill's every other embodiment obtained without making creative work, belongs to guarantor of the present invention
The range of shield.
A kind of embodiment 1: microwave CVD nano water-proof combination process, comprising the following steps: (1) the pre- place of circuit substrate
Reason: circuit substrate is put into after being cleaned up in spent glycol in supersonic wave cleaning machine and is dried with hot-air, then will dry after after
Circuit substrate be placed into microwave CVD equipment vacuum reaction it is intracavitary；(2) it the pre-treatment of circuit substrate: adjusts and keeps step
(1) the intracavitary temperature of vacuum reaction carries out vacuumize process to vacuum reaction chamber, makes its internal vacuum between 25 DEG C in
For 50KPa, cleaning treatment gas Ar gas is passed through to 70KPA, 2S progress aura in the microwave region that frequency is 300GHz is placed in and puts
Electric treatment；(3) vacuum degree of the vacuum reaction chamber in step (2) Jing Guo glow discharge process is evacuated to 20KPa hereinafter, being placed in
Frequency is to be passed through first gas (steam after the heating vaporization of Parylene powder material) by 0.5L/min in the microwave region of 500GHz,
And the vacuum degree for keeping vacuum reaction intracavitary is 10K Pa, first gas occurs ionization and forms active ion monomer；In circuit
Substrate surface deposits to obtain barrier insulating film layer；(4) the intracavitary gas of extraction vacuum reaction, then to import second gas (heated
The fluorocarbon gases of vaporization), the pressure for keeping vacuum reaction intracavitary reaches 10K Pa；Second gas, which is placed in frequency, is
The microwave region of 800GHZ ionizes second gas, step (3) obtain barrier insulating film layer surface formed with a thickness of
10nm hydrophobic oleophobic corrosion-resistant finishes；(5) it post-processes: being passed through air to vacuum reaction chamber to standard atmospheric pressure, take out circuit base
Plate.
A kind of embodiment 2: microwave CVD nano water-proof combination process, comprising the following steps: (1) the pre- place of circuit substrate
Reason: circuit substrate is put into after being cleaned up in spent glycol in supersonic wave cleaning machine and is dried with hot-air, then will dry after after
Circuit substrate be placed into microwave CVD equipment vacuum reaction it is intracavitary；(2) it the pre-treatment of circuit substrate: adjusts and keeps step
(1) the intracavitary temperature of vacuum reaction carries out vacuumize process to vacuum reaction chamber, makes its internal vacuum between 30 DEG C in
For 60KPa, cleaning treatment gas Ar gas is passed through to 80KPA, 10S in the microwave region that frequency is 400GHz is placed in and carries out aura
Discharge treatment；(3) vacuum degree of the vacuum reaction chamber in step (2) Jing Guo glow discharge process is evacuated to 20KPa hereinafter, setting
In in the microwave region that frequency is 600GHz, it is passed through first gas (HMDSO) by 1L/min, and keep vacuum reaction intracavitary
Vacuum degree is 20K Pa, and first gas occurs ionization and forms active ion monomer；It deposits and is obstructed in surface of circuit substrate
Insulating film layer；(4) the intracavitary gas of extraction vacuum reaction, then import second gas (the fluorocarbons gas of heated vaporization
Body), the pressure for keeping vacuum reaction intracavitary reaches 50K Pa；Second gas, which is placed in the microwave region that frequency is 900GHZ, makes the
Two gas ionizations are formed resistance to a thickness of 10nm-500nm hydrophobic oleophobic in the surface for the barrier insulating film layer that step (3) obtains
Corrosion resistant coating；(5) it post-processes: being passed through air to vacuum reaction chamber to standard atmospheric pressure, take out circuit substrate.
A kind of embodiment 3: microwave CVD nano water-proof combination process, comprising the following steps: (1) the pre- place of circuit substrate
Reason: circuit substrate is put into after being cleaned up in spent glycol in supersonic wave cleaning machine and is dried with hot-air, then will dry after after
Circuit substrate be placed into microwave CVD equipment vacuum reaction it is intracavitary；(2) it the pre-treatment of circuit substrate: adjusts and keeps step
(1) the intracavitary temperature of vacuum reaction carries out vacuumize process to vacuum reaction chamber, makes its internal vacuum between 40 DEG C in
For 70KPa, it is passed through cleaning treatment gas O2Gas is placed in 50S in the microwave region that frequency is 460GHz and carries out aura to 90KPA
Discharge treatment；(3) vacuum degree of the vacuum reaction chamber in step (2) Jing Guo glow discharge process is evacuated to 20KPa hereinafter, setting
In in the microwave region that frequency is 700GHz, it is passed through first gas (HMDSM) by 1L/min, and keep vacuum reaction intracavitary
Vacuum degree is 20K Pa, and first gas occurs ionization and forms active ion monomer；It deposits and is obstructed in surface of circuit substrate
Insulating film layer；(4) the intracavitary gas of extraction vacuum reaction, then import second gas (the fluorocarbons gas of heated vaporization
Body), the pressure for keeping vacuum reaction intracavitary reaches 100K Pa；Second gas, which is placed in the microwave region that frequency is 1000GHZ, to be made
Second gas ionization is formed in the surface for the barrier insulating film layer that step (3) obtains with a thickness of 10nm-500nm hydrophobic oleophobic
Corrosion-resistant finishes；(5) it post-processes: being passed through air to vacuum reaction chamber to standard atmospheric pressure, take out circuit substrate.
A kind of embodiment 4: microwave CVD nano water-proof combination process, comprising the following steps: (1) the pre- place of circuit substrate
Reason: circuit substrate is put into after being cleaned up in spent glycol in supersonic wave cleaning machine and is dried with hot-air, then will dry after after
Circuit substrate be placed into microwave CVD equipment vacuum reaction it is intracavitary；(2) it the pre-treatment of circuit substrate: adjusts and keeps step
(1) the intracavitary temperature of vacuum reaction carries out vacuumize process to vacuum reaction chamber, makes its internal vacuum at 45 DEG C in
80KPa is passed through cleaning treatment gas Ar gas to 100KPA, is placed in 100S in the microwave region that frequency is 530GHz and carries out aura
Discharge treatment；(3) vacuum degree of the vacuum reaction chamber in step (2) Jing Guo glow discharge process is evacuated to 20KPa hereinafter, setting
In in the microwave region that frequency is 800GHz, it is passed through first gas (steam after the heating vaporization of Parylene powder material) by 1L/min,
And the vacuum degree for keeping vacuum reaction intracavitary is 20K Pa, first gas occurs ionization and forms active ion monomer；In circuit base
Plate surface deposits to obtain barrier insulating film layer；(4) the intracavitary gas of extraction vacuum reaction, then import second gas (heated vapour
The fluorocarbon gases of change), the pressure for keeping vacuum reaction intracavitary reaches 120K Pa；Second gas, which is placed in frequency, is
The microwave region of 1050GHZ ionizes second gas, forms thickness in the surface for the barrier insulating film layer that step (3) obtains
For 10nm-500nm hydrophobic oleophobic corrosion-resistant finishes；(5) it post-processes: being passed through air to vacuum reaction chamber to standard atmospheric pressure, take
Circuit substrate out.
A kind of embodiment 5: microwave CVD nano water-proof combination process, comprising the following steps: (1) the pre- place of circuit substrate
Reason: circuit substrate is put into after being cleaned up in spent glycol in supersonic wave cleaning machine and is dried with hot-air, then will dry after after
Circuit substrate be placed into microwave CVD equipment vacuum reaction it is intracavitary；(2) it the pre-treatment of circuit substrate: adjusts and keeps step
(1) the intracavitary temperature of vacuum reaction carries out vacuumize process to vacuum reaction chamber, makes its internal vacuum at 50 DEG C in
90KPa is passed through cleaning treatment gas oxygen to 110KPA, is placed in 500S in the microwave region that frequency is 600GHz and carries out aura
Discharge treatment；(3) vacuum degree of the vacuum reaction chamber in step (2) Jing Guo glow discharge process is evacuated to 20KPa hereinafter, setting
In in the microwave region that frequency is 900GHz, it is passed through first gas (steam after the heating vaporization of Parylene powder material) by 1L/min,
And the vacuum degree for keeping vacuum reaction intracavitary is 20K Pa, first gas occurs ionization and forms active ion monomer；In circuit base
Plate surface deposits to obtain barrier insulating film layer；(4) the intracavitary gas of extraction vacuum reaction, then import second gas (heated vapour
The fluorocarbon gases of change), the pressure for keeping vacuum reaction intracavitary reaches 150K Pa；Second gas, which is placed in frequency, is
The microwave region of 1100GHZ ionizes second gas, forms thickness in the surface for the barrier insulating film layer that step (3) obtains
For 10nm-500nm hydrophobic oleophobic corrosion-resistant finishes；(5) it post-processes: being passed through air to vacuum reaction chamber to standard atmospheric pressure, take
Circuit substrate out.
A kind of embodiment 6: microwave CVD nano water-proof combination process, comprising the following steps: (1) the pre- place of circuit substrate
Reason: circuit substrate is put into after being cleaned up in spent glycol in supersonic wave cleaning machine and is dried with hot-air, then will dry after after
Circuit substrate be placed into microwave CVD equipment vacuum reaction it is intracavitary；(2) it the pre-treatment of circuit substrate: adjusts and keeps step
(1) the intracavitary temperature of vacuum reaction carries out vacuumize process to vacuum reaction chamber, makes its internal vacuum at 55 DEG C in
100KPa is passed through cleaning treatment gas oxygen to 120KPA, is placed in 1000S in the microwave region that frequency is 700GHz and carries out brightness
Light discharge treatment；(3) vacuum degree of the vacuum reaction chamber in step (2) Jing Guo glow discharge process is evacuated to 20KPa hereinafter,
It is placed in the microwave region that frequency is 1000GHz, is passed through the first gas (steaming after the heating vaporization of dimethylbenzene liquid by 2L/min
Vapour), and the vacuum degree for keeping vacuum reaction intracavitary is 30K Pa, first gas occurs ionization and forms active ion monomer；?
Surface of circuit substrate deposits to obtain barrier insulating film layer；(4) the intracavitary gas of extraction vacuum reaction, then import second gas (warp
Heat the fluorocarbon gases of vaporization), the pressure for keeping vacuum reaction intracavitary reaches 200K Pa；Second gas is placed in frequency
Second gas is ionized for the microwave region of 1200GHZ, forms thickness in the surface for the barrier insulating film layer that step (3) obtains
Degree is 10nm-500nm hydrophobic oleophobic corrosion-resistant finishes；(5) it post-processes: being passed through air to vacuum reaction chamber to standard atmospheric pressure,
Take out circuit substrate.
A kind of embodiment 7: microwave CVD nano water-proof combination process, comprising the following steps: (1) the pre- place of circuit substrate
Reason: circuit substrate is put into after being cleaned up in spent glycol in supersonic wave cleaning machine and is dried with hot-air, then will dry after after
Circuit substrate be placed into microwave CVD equipment vacuum reaction it is intracavitary；(2) it the pre-treatment of circuit substrate: adjusts and keeps step
(1) the intracavitary temperature of vacuum reaction carries out vacuumize process to vacuum reaction chamber, makes its internal vacuum at 55 DEG C in
100KPa is passed through cleaning treatment gas oxygen to 120KPA, is placed in 100S in the microwave region that frequency is 700GHz and carries out aura
Discharge treatment；(3) vacuum degree of the vacuum reaction chamber in step (2) Jing Guo glow discharge process is evacuated to 20KPa hereinafter, setting
In in the microwave region that frequency is 1000GHz, the first gas (steaming after the heating vaporization of Parylene powder material is passed through by 2L/min
Vapour), and the vacuum degree for keeping vacuum reaction intracavitary is 30K Pa, first gas occurs ionization and forms active ion monomer；?
Surface of circuit substrate deposits to obtain barrier insulating film layer；(4) the intracavitary gas of extraction vacuum reaction, then import second gas (warp
Heat the fluorocarbon gases of vaporization), the pressure for keeping vacuum reaction intracavitary reaches 200K Pa；Second gas is placed in frequency
Second gas is ionized for the microwave region of 1200GHZ, forms thickness in the surface for the barrier insulating film layer that step (3) obtains
Degree is 10nm-500nm hydrophobic oleophobic corrosion-resistant finishes；(5) repetition step (3) is each primary to step (5), obtains barrier insulation
Film layer and hydrophobic oleophobic corrosion-resistant finishes are spaced apart from each other the layer of stacking collocation, (6) post-processing: are passed through air to vacuum reaction chamber
To standard atmospheric pressure, circuit substrate is taken out.
A kind of embodiment 8: microwave CVD nano water-proof combination process, comprising the following steps: (1) the pre- place of circuit substrate
Reason: circuit substrate is put into after being cleaned up in spent glycol in supersonic wave cleaning machine and is dried with hot-air, then will dry after after
Circuit substrate be placed into microwave CVD equipment vacuum reaction it is intracavitary；(2) it the pre-treatment of circuit substrate: adjusts and keeps step
(1) the intracavitary temperature of vacuum reaction carries out vacuumize process to vacuum reaction chamber, makes its internal vacuum at 55 DEG C in
100KPa is passed through cleaning treatment gas oxygen to 120KPA, is placed in 100S in the microwave region that frequency is 700GHz and carries out aura
Discharge treatment；(3) vacuum degree of the vacuum reaction chamber in step (2) Jing Guo glow discharge process is evacuated to 20KPa hereinafter, setting
In in the microwave region that frequency is 1000GHz, the first gas (steaming after the heating vaporization of Parylene powder material is passed through by 2L/min
Vapour), and the vacuum degree for keeping vacuum reaction intracavitary is 30K Pa, first gas occurs ionization and forms active ion monomer；It is logical
Enter halogen gas 0.1-10L, reacted with active ion monomer, and is deposited as thickness in 100- on the circuit substrate
The modified barrier insulating film layer of 5000nm.(4) the intracavitary gas of extraction vacuum reaction, then import second gas (heated vaporization
Fluorocarbon gases), the pressure for keeping vacuum reaction intracavitary reaches 200K Pa；Second gas, which is placed in frequency, is
The microwave region of 1200GHZ ionizes second gas, is formed in the surface for the modified barrier insulating film layer that step (3) obtains
With a thickness of 10nm-500nm hydrophobic oleophobic corrosion-resistant finishes；(5) it post-processes: being passed through air to vacuum reaction chamber to normal atmosphere
Pressure takes out circuit substrate.
By above-mentioned eight groups of experiments (Examples 1 to 8), film thickness is carried out to the resulting coating of each embodiment, waterproof detects
And machining period metering, comparing result are as follows:
| Embodiment 1 | Embodiment 2 | Embodiment 3 | Embodiment 4 | Embodiment 5 | Embodiment 6 | Embodiment 7 | Embodiment 8 | RFCVD or MFCVD | |
| Four layers | It is modified | ||||||||
| Film thickness nm | 35 | 56 | 96 | 122 | 138 | 216 | 380 | 260 | 10-20nm |
| Waterproofness IPX | IPX7 | IPX7 | IPY7 | IPX7 | IPX7 | IPX7 | IPY7 | IPX7 | Less than IPX6 |
| Process time s | 463 | 566 | 697 | 897 | 1452 | 1669 | 1206 | 965 | 3600 or more |
From above-mentioned experimental result, it can be clearly seen that, microwave CVD processing technology provided by the invention has apparent excellent
Gesture, process time more traditional RFCVD or MFCVD (high frequency or intermediate frequency CVD) technique are compared, and present invention process process time is big
It is big to shorten (half of the maximum duration 1669s less than prior art 3600s), while film thickness and waterproof performance are compared with prior art
It greatly enhances.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention.
Claims (10)
1. a kind of microwave CVD nano water-proof combination process, which comprises the following steps:
(1) pretreatment of circuit substrate: circuit substrate is put into after being cleaned up in supersonic wave cleaning machine with neutral cleaners and is used
Hot-air drying, the vacuum reaction that the circuit substrate after after baking is then placed into microwave CVD equipment are intracavitary；
(2) pre-treatment of circuit substrate: being adjusted and keeps vacuum reaction is intracavitary in step (1) temperature between 25-55 DEG C, right
Vacuum reaction chamber carries out vacuumize process, makes its internal vacuum 50-100KPa, is passed through cleaning treatment gas to 70-
120KPA is placed in 2-1000S in the microwave region that frequency is 300-700GHz and carries out glow discharge process；
(3) vacuum degree of the vacuum reaction chamber in step (2) Jing Guo glow discharge process is evacuated to 20KPa hereinafter, being placed in frequency
For the vacuum degree in the microwave region of 500-1000GHz, being passed through first gas by 0.5-2L/min, and being kept vacuum reaction intracavitary
For 10-30K Pa, first gas occurs ionization and forms active ion monomer；It deposits to obtain barrier insulating film in surface of circuit substrate
Layer；
(4) the intracavitary gas of extraction vacuum reaction, then second gas is imported, the pressure for keeping vacuum reaction intracavitary reaches 10-200K
Pa；Second gas, which is placed in the microwave region that frequency is 800-1200GHZ, ionizes second gas, obtains in step (3)
The surface for obstructing insulating film layer is formed with a thickness of 10-500nm hydrophobic oleophobic corrosion-resistant finishes；
(5) it post-processes: being passed through air to vacuum reaction chamber to standard atmospheric pressure, take out circuit substrate.
2. a kind of microwave CVD nano water-proof combination process according to claim 1, which is characterized in that further include in step
(5) between step (6) the step of (7), the step (7) are to repeat step (3) to step (5), the resistance for obtaining step (3)
The hydrophobic oleophobic corrosion-resistant finishes that used outside insulated film layer and step (5) obtain, which is layered on top of each other, mixes into 2n layers (n=1,2,3 ...),
To form the high composite water-proof coating of steam insulating properties height, acid and alkali-resistance, a waterproofing grade.
3. a kind of microwave CVD nano water-proof combination process according to claim 1, which is characterized in that in described (3) step
It is passed through halogen gas 0.1-10L in rapid, is reacted with the active ion monomer of step (3), and is sunk on the circuit substrate
Product is modified barrier insulating film layer of the thickness in 100-5000nm.
4. a kind of microwave CVD nano water-proof combination process according to claim 1, which is characterized in that the cleaning treatment
Gas is Ar, O2One of or a variety of mixing.
5. a kind of microwave CVD nano water-proof combination process according to claim 1, which is characterized in that the neutral cleaning
Agent is one of ethylene glycol solution or board-washing water or a variety of.
6. a kind of microwave CVD nano water-proof combination process according to claim 1, which is characterized in that the first gas
It is formed for dimethylbenzene liquid or the heating vaporization of Parylene powder material.
7. a kind of microwave CVD nano water-proof combination process according to claim 1, which is characterized in that the first gas
For one of hydrocarbon (CnHn) or a variety of.
8. a kind of microwave CVD nano water-proof combination process according to claim 1, which is characterized in that the first gas
For type siloxane gas.
9. a kind of microwave CVD nano water-proof combination process according to claim 6, which is characterized in that the Parylene
Type is c-type, D type, N-type or HT type.
10. a kind of microwave CVD nano water-proof combination process according to claim 1, which is characterized in that the second gas
One of fluorocarbons (CnFm) or hydrocarbon (CnHn) for vaporizing for process heating are a variety of.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114855142A (en) * | 2022-04-18 | 2022-08-05 | 电子科技大学 | Parylene material with low surface energy and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1552943A (en) * | 2002-08-07 | 2004-12-08 | Ф�ء�����˹��˾ | Rapid process for producing multilayer barrier coatings |
| CN1287004C (en) * | 2000-08-01 | 2006-11-29 | 西德尔公司 | Barrier coating |
| CN106622715A (en) * | 2016-08-30 | 2017-05-10 | 无锡荣坚五金工具有限公司 | Magnetic field microwave discharge plasma polymerization surface coating device and method |
| CN106868473A (en) * | 2017-01-23 | 2017-06-20 | 无锡荣坚五金工具有限公司 | A kind of preparation method of gradient reduction structure liquid-proof coating |
| CN106906456A (en) * | 2017-01-23 | 2017-06-30 | 无锡荣坚五金工具有限公司 | A kind of preparation method of the controllable coating of the degree of cross linking |
| CN106958012A (en) * | 2017-05-21 | 2017-07-18 | 无锡荣坚五金工具有限公司 | A kind of substrate transport formula plasma discharge prepares the device and method of nano coating |
| CN107686986A (en) * | 2017-08-23 | 2018-02-13 | 江苏菲沃泰纳米科技有限公司 | A kind of preparation method of the organic silicon nano protective coating of modulated structure |
| CN107699868A (en) * | 2017-08-23 | 2018-02-16 | 江苏菲沃泰纳米科技有限公司 | A kind of preparation method of high-insulativity nano protecting coating |
-
2019
- 2019-05-20 CN CN201910419611.2A patent/CN110195218A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1287004C (en) * | 2000-08-01 | 2006-11-29 | 西德尔公司 | Barrier coating |
| CN1552943A (en) * | 2002-08-07 | 2004-12-08 | Ф�ء�����˹��˾ | Rapid process for producing multilayer barrier coatings |
| CN106622715A (en) * | 2016-08-30 | 2017-05-10 | 无锡荣坚五金工具有限公司 | Magnetic field microwave discharge plasma polymerization surface coating device and method |
| CN106868473A (en) * | 2017-01-23 | 2017-06-20 | 无锡荣坚五金工具有限公司 | A kind of preparation method of gradient reduction structure liquid-proof coating |
| CN106906456A (en) * | 2017-01-23 | 2017-06-30 | 无锡荣坚五金工具有限公司 | A kind of preparation method of the controllable coating of the degree of cross linking |
| CN106958012A (en) * | 2017-05-21 | 2017-07-18 | 无锡荣坚五金工具有限公司 | A kind of substrate transport formula plasma discharge prepares the device and method of nano coating |
| CN107686986A (en) * | 2017-08-23 | 2018-02-13 | 江苏菲沃泰纳米科技有限公司 | A kind of preparation method of the organic silicon nano protective coating of modulated structure |
| CN107699868A (en) * | 2017-08-23 | 2018-02-16 | 江苏菲沃泰纳米科技有限公司 | A kind of preparation method of high-insulativity nano protecting coating |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114855142A (en) * | 2022-04-18 | 2022-08-05 | 电子科技大学 | Parylene material with low surface energy and preparation method thereof |
| CN114855142B (en) * | 2022-04-18 | 2023-07-25 | 电子科技大学 | Low surface energy parylene material and its preparation method |
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