CN110190142A - The manufacturing method of etching method and buffer layer - Google Patents
The manufacturing method of etching method and buffer layer Download PDFInfo
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- CN110190142A CN110190142A CN201910518147.2A CN201910518147A CN110190142A CN 110190142 A CN110190142 A CN 110190142A CN 201910518147 A CN201910518147 A CN 201910518147A CN 110190142 A CN110190142 A CN 110190142A
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000005530 etching Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000011241 protective layer Substances 0.000 claims abstract description 90
- 239000010410 layer Substances 0.000 claims abstract description 79
- 239000000463 material Substances 0.000 claims abstract description 71
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 43
- 238000001312 dry etching Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 12
- -1 hydrazine class compound Chemical class 0.000 claims description 5
- 239000004156 Azodicarbonamide Substances 0.000 claims description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 3
- XOZUGNYVDXMRKW-AATRIKPKSA-N azodicarbonamide Chemical compound NC(=O)\N=N\C(N)=O XOZUGNYVDXMRKW-AATRIKPKSA-N 0.000 claims description 3
- 235000019399 azodicarbonamide Nutrition 0.000 claims description 3
- VJRITMATACIYAF-UHFFFAOYSA-N benzenesulfonohydrazide Chemical compound NNS(=O)(=O)C1=CC=CC=C1 VJRITMATACIYAF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- VVWRJUBEIPHGQF-MDZDMXLPSA-N propan-2-yl (ne)-n-propan-2-yloxycarbonyliminocarbamate Chemical compound CC(C)OC(=O)\N=N\C(=O)OC(C)C VVWRJUBEIPHGQF-MDZDMXLPSA-N 0.000 claims description 3
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 claims description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical group O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 claims 1
- 229910052755 nonmetal Inorganic materials 0.000 claims 1
- 125000005147 toluenesulfonyl group Chemical group C=1(C(=CC=CC1)S(=O)(=O)*)C 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 10
- 235000008216 herbs Nutrition 0.000 description 6
- 210000002268 wool Anatomy 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007687 exposure technique Methods 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012163 sequencing technique Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ISNKSXRJJVWFIL-UHFFFAOYSA-N (sulfonylamino)amine Chemical class NN=S(=O)=O ISNKSXRJJVWFIL-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KVNRLNFWIYMESJ-UHFFFAOYSA-N butyronitrile Chemical compound CCCC#N KVNRLNFWIYMESJ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
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- Drying Of Semiconductors (AREA)
- Laminated Bodies (AREA)
Abstract
A kind of manufacturing method of the disclosure about etching method and buffer layer, is related to field of photoelectric technology.The etching method includes: the covering protection material on target layer, and to form protective layer, protection materials include photoresist and foamed material；Protective layer is heated at the first temperature, until surface irregularity of the protective layer far from target layer, the first temperature is less than the temperature of photoresist hardening；Harden protective layer；Carry out dry etching is carried out to protective layer, until the surface irregularity of target layer；Remove protective layer.The etching method of the disclosure can reduce cost, and improve production efficiency.
Description
Technical field
This disclosure relates to field of photoelectric technology, in particular to the manufacturing method of a kind of etching method and buffer layer.
Background technique
In the opto-electronic device, it is often necessary to making herbs into wool processing be carried out to specific film layer, to form uneven rough surface.
For example, in the photovoltaic cells, needing to carry out making herbs into wool to film layers such as monocrystalline silicon or amorphous silicons, to increase light path, battery efficiency is improved.
Currently, needing to carry out photoetching to film layer with special mask plate, still, due to the size of the concaveconvex structure of flannelette in making herbs into wool
Usually micron or nanoscale, the difficulty that corresponding pattern is formed on mask plate is larger, higher cost, and production efficiency compared with
It is low.
It should be noted that information is only used for reinforcing the reason to the background of the disclosure disclosed in above-mentioned background technology part
Solution, therefore may include the information not constituted to the prior art known to persons of ordinary skill in the art.
Summary of the invention
The disclosure aims to overcome that above-mentioned the deficiencies in the prior art, provides the manufacture of a kind of etching method and buffer layer
Method can reduce cost, and improve production efficiency.
According to one aspect of the disclosure, a kind of etching method is provided, comprising:
The covering protection material on target layer, to form protective layer, the protection materials include photoresist and foaming material
Material；
The protective layer is heated at the first temperature, until surface of the protective layer far from the target layer
Uneven, first temperature is less than the temperature of photoresist hardening；
Harden the protective layer；
Carry out dry etching is carried out to the protective layer, until the surface irregularity of the target layer；
Remove the protective layer.
In a kind of exemplary embodiment of the disclosure, harden the protective layer, comprising:
The protective layer is heated at the second temperature, the second temperature is not less than the temperature of photoresist hardening
Degree.
In a kind of exemplary embodiment of the disclosure, the foamed material includes azo-compound, sulfonyl hydrazines chemical combination
At least one of object and inorganic foamed material.
In a kind of exemplary embodiment of the disclosure, the azo-compound includes that azodicarbonamide, azo two are different
At least one in butyronitrile, diisopropyl azodiformate；The sulfonyl hydrazines compound includes benzene sulfonyl hydrazide and tolysulfonyl
At least one in hydrazine；The inorganic foamed material includes carbonate.
In a kind of exemplary embodiment of the disclosure, the foamed material is azo-compound, and first temperature is not
Less than 60 DEG C, and less than 100 DEG C；The second temperature is not less than 100 DEG C.
In a kind of exemplary embodiment of the disclosure, the photoresist is positive photoresist.
In a kind of exemplary embodiment of the disclosure, before forming the protective layer, the etching method further include:
Photoresist is added in foamed material, and is uniformly mixed, to obtain protection materials.
In a kind of exemplary embodiment of the disclosure, the material of the target layer is metal or inorganic non-metallic material
Material.
According to one aspect of the disclosure, a kind of manufacturing method of buffer layer is provided, comprising:
Cushioned material layer is formed in a substrate；
In surface covering protection material of the cushioned material layer far from the substrate, to form protective layer, the protection
Layer includes photoresist and foamed material；
The protective layer is heated at the first temperature, until concave-convex surface of the protective layer far from the substrate
Injustice, first temperature are less than the temperature of photoresist hardening；
Harden the protective layer；
Carry out dry etching is carried out to the protective layer, until the surface irregularity of the cushioned material layer, to obtain
Buffer layer；
Remove the protective layer.
In a kind of exemplary embodiment of the disclosure, harden the protective layer, comprising:
The protective layer is heated at the second temperature, the second temperature is not less than the temperature of photoresist hardening
Degree.
Disclosure etching method and manufacturing method, when the foamed material in protective layer can heat at the first temperature, release
Gas, to make surface irregularity of the protective layer far from target layer；When carrying out dry etching to the protective layer after hardening,
Sunk area is thinned simultaneously with other regions, thus sunk area exposes target layer at first, so that target layer is corresponding to recessed
The region for falling into region is etched at first, so as to make the surface irregularity of target layer to get to flannelette needed for making herbs into wool.By
This, can be avoided using exposure and imaging technique from using mask plate, to reduce costs, and be conducive to improve production effect
Rate.
It should be understood that above general description and following detailed description be only it is exemplary and explanatory, not
The disclosure can be limited.
Detailed description of the invention
The drawings herein are incorporated into the specification and forms part of this specification, and shows the implementation for meeting the disclosure
Example, and together with specification for explaining the principles of this disclosure.It should be evident that the accompanying drawings in the following description is only the disclosure
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is the flow chart of one embodiment of disclosure etching method.
Fig. 2 is the structural schematic diagram of the step S110 of etching method in Fig. 1.
Fig. 3 is the structural schematic diagram of the step S120 of etching method in Fig. 1.
Fig. 4 is the structural schematic diagram of the step S140 of etching method in Fig. 1.
Fig. 5 is the structural schematic diagram of the step S150 of etching method in Fig. 1.
Fig. 6 is the flow chart of another embodiment of disclosure etching method.
Fig. 7 is the flow chart of one embodiment of disclosure manufacturing method.
Description of symbols: 100, substrate；1, target layer；101, pit；2, protective layer；201, sunk area；200,
Bubble.
Specific embodiment
Example embodiment is described more fully with reference to the drawings.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, thesing embodiments are provided so that the disclosure will
Fully and completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.Identical attached drawing in figure
Label indicates same or similar structure, thus the detailed description that will omit them.In addition, attached drawing is only the schematic of the disclosure
Diagram, is not necessarily drawn to scale.
Although the term of relativity, such as "upper" "lower" is used to describe a component of icon for another in this specification
The relativeness of one component, but these terms are in this manual merely for convenient, for example, with reference to the accompanying drawings described in show
The direction of example.It is appreciated that, if making it turn upside down the device overturning of icon, the component described in "upper" will
As the component in "lower".When certain structure is at other structures "upper", it is possible to refer to that certain structural integrity is formed in other structures
On, or refer to that certain structure is " direct " and be arranged in other structures, or refer to that certain structure is arranged by the way that another structure is " indirect " in other knots
On structure.
Term "one", " one ", "the", " described " and "at least one" be to indicate that there are one or more elements/groups
At part/etc.；Term " comprising " and " having " is to indicate the open meaning being included and refer in addition to listing
Element/component part/also may be present except waiting other element/component part/etc.；Term " first " and " second " are only as mark
Note uses, and is not the quantity limitation to its object.
Disclosure embodiment provides a kind of etching method, as shown in Figure 1, the etching method includes step S110- step
Rapid S150, in which:
Step S110, the covering protection material on target layer, to form protective layer, the protection materials include photoresist
And foamed material；
Step S120, the protective layer is heated at the first temperature, until the protective layer is far from the target
The surface irregularity of film layer, first temperature are less than the temperature of photoresist hardening；
Step S130, the protective layer is hardened；
Step S140, carry out dry etching is carried out to the protective layer, until the surface irregularity of the target layer；
Step S150, the protective layer is removed.
The etching method of disclosure embodiment, the foamed material in protective layer discharge gas when can heat at the first temperature
Body, to make surface irregularity of the protective layer far from target layer；It is recessed when carrying out dry etching to the protective layer after hardening
Region is fallen into be thinned simultaneously with other regions, thus sunk area exposes target layer at first, so that target layer corresponds to recess
The region in region is etched at first, so as to make the surface irregularity of target layer to get to flannelette needed for making herbs into wool.By
This, can be avoided using exposure and imaging technique from using mask plate, to reduce costs, and be conducive to improve production effect
Rate.
Each step of disclosure embodiment etching method is described in detail below:
In step s 110, the covering protection material on target layer, to form protective layer, the protection materials include light
Photoresist and foamed material.
As shown in Fig. 2, the material of target layer 1 can be the metals such as silver, aluminium, copper, it is also possible to metal oxide, or
Person, the material of target layer 1 can also be the inorganic non-metallic materials such as silicon, silicon nitride, silicon carbide, will not enumerate herein.
For example, target layer 1 can be for the monocrystalline silicon layer or amorphous silicon layer in solar battery, the circle being also possible in display panel
Polaroid etc., specific material and structure can be depending on the scenes of its application.Meanwhile for the ease of being made to target layer 1
Suede, target layer 1 can be formed in a substrate 100, to be supported to target layer 1.
As shown in Fig. 2, the protection materials of protective layer 2 are mixture, photoresist and foamed material are included at least, in which:
Photoresist can be positive photoresist, recessed convenient for forming micron order even nanoscale to obtain higher resolution ratio
It falls into or raised.Certainly, photoresist is also possible to negative photoresist.The specific ingredient of photoresist does not do particular determination herein.
Foamed material can discharge gas when heated in the form of bubble 200 outward, and bubble 200 is on the surface of protective layer 2
Rupture, can form sunk area 201 in the position of rupture, so that surface irregularity of the protective layer 2 far from target layer 1, it should
The pattern on surface is pattern needed for target layer 1.
Foamed material may include at least one of azo-compound, sulfonyl hydrazines compound and inorganic foamed material, certainly,
It is also possible to other foamed materials, as long as gas can be discharged when heated.Illustratively, above-mentioned azo-compound can wrap
Include azodicarbonamide, azodiisobutyronitrile, at least one in diisopropyl azodiformate.Above-mentioned sulfonyl hydrazines compound
It may include at least one in benzene sulfonyl hydrazide and unifor.Above-mentioned inorganic foamed material may include carbonate.
In the step s 120, the protective layer is heated at the first temperature, until the protective layer is far from described
The surface irregularity of target layer, first temperature are less than the temperature of photoresist hardening.
As shown in Figures 2 and 3, when heated, target layer 1 can be placed in heating dish, for example, target layer will be equipped with
1 substrate 100 is placed in heating dish；Certainly, baking box can also be used or other heating devices are heated, it is special not do herein
It limits.During heating, the foamed material in protective layer 2 discharges gas, so that surface of the protective layer 2 far from target layer 1
Multiple sunk areas 201 are formed, the surface irregularity is made.
First temperature is not less than the temperature that can make foamed material release gas, but is less than the temperature of photoresist hardening, this is hard
The temperature of change can be post bake temperature, and bubble 200 be discharged can not to avoid photoresist hardening.For example: foamed material is
Azo-compound, the first temperature are not less than 60 DEG C, are not more than 100 DEG C.The specific value view photoresist and foaming material of first temperature
Depending on the concrete type of material, particular determination is not done herein.
In step s 130, the protective layer is hardened.
As shown in figure 3, can be that protective layer 2 is hardened by heating, it is recessed to keep protective layer 2 to be formed because gas is discharged
The pattern of convex injustice.For example: hardening protective layer 2, i.e. step S130, comprising:
The protective layer is heated at the second temperature, the second temperature is not less than the temperature of photoresist hardening
Degree.
As shown in figure 3, at the second temperature can be with heating method phase at the first temperature to the heating method of protective layer 2
Together, such as by heating devices such as heating dish or baking boxes, to avoid increasing new heating device, save the cost.Second temperature
Degree is not less than the hardening temperature of photoresist, so that photoresist hardens, keeps protective layer 2 to be formed because gas is discharged uneven
Pattern.For example, second temperature is not less than 100 DEG C.The specific value of second temperature is depending on the concrete type of photoresist, herein
Do not do particular determination.
In step S140, carry out dry etching is carried out to the protective layer, until the concave-convex surface of the target layer
It is uneven.
As shown in Figure 3 and Figure 4, can side by protective layer 2 far from target layer 1 towards protective layer 2 carry out dry etching,
Until the surface irregularity of target layer 1, i.e., form multiple pits 101 close to the surface of protective layer 2 in target layer 1, it is recessed
Hole 101 is corresponded with sunk area 201, to form the pattern of protective layer 2 on target layer 1, that is, forms flannelette.Dry method
The type of etching can be plasma etching or reactive ion etching etc., not do particular determination herein.
The concrete principle that the pattern of protective layer 2 is formed on target layer 1 is as follows:
As shown in Figure 3-Figure 5, protective layer 2 has multiple sunk areas 201, the i.e. surface far from the surface of target layer 1
It is uneven；When carrying out dry etching, protective layer 2 is gradually thinned, wherein recessed when sunk area 201 exposes target layer 1
It falls into region 201 and still covers lid target layer 1 with exterior domain, at this point, continuing to etch, then target layer 1 is by sunk area
201 regions exposed are etched, and form pit 101, and other regions are since still protected seam 2 covers, and are not etched.It is logical
Control etch period is crossed, after pit 101 being formed on target layer 1, and when the region other than pit 101 is not etched, is stopped
It only etches, so that target layer 1 be made to obtain flannelette close to the surface irregularity of protective layer 2.
In step S150, the protective layer is removed.
As shown in figure 5, remaining protective layer 2 on the techniques such as ashing or plasma cleaning removal target layer 1 can be used, with
Required target layer 1 is obtained, removing the detailed process of photoresist, this will not be detailed here.
As shown in fig. 6, the etching method of disclosure embodiment may also include the step of preparation protection materials, i.e. making herbs into wool side
Method further include:
Step S160, photoresist is added in foamed material, and be uniformly mixed, to obtain protection materials.
Step S160 is carried out before step S110, to be used when forming protective layer 2, but step S160 and formation target
The sequencing of film layer 1 is it is not limited here.
Disclosure embodiment also provides a kind of manufacturing method of buffer layer, which can be slow in solar battery
Layer is rushed, as shown in fig. 7, the manufacturing method includes step S210- step S260, in which:
Step S210, cushioned material layer is formed in a substrate；
Step S220, in surface covering protection material of the cushioned material layer far from the substrate, to form protective layer,
The protective layer includes photoresist and foamed material；
Step S230, the protective layer is heated at the first temperature, until the protective layer is far from the substrate
Surface irregularity, first temperature be lower than the photoresist hardening temperature；
Step S240, the protective layer is hardened；
Step S250, carry out dry etching is carried out to the protective layer, until the concave-convex surface of the cushioned material layer is not
It is flat, to obtain buffer layer；
Step S260, the protective layer is removed.
The beneficial effect of the manufacturing method of the buffer layer of disclosure embodiment can refer to the beneficial effect of above-mentioned etching method
Fruit, details are not described herein.
The material of buffer layer in step S210 can be the semiconductor materials such as silicon, silicon carbide, silicon nitride, and it is special not do herein
It limits.
Step S240 includes:
The protective layer is heated at the second temperature, the second temperature is not less than the temperature of photoresist hardening
Degree.
The details of step S220- step S260 can refer to the step S110- step S150 in above-mentioned etching method, herein not
It is described in detail again.
In addition, the manufacturing method of disclosure embodiment may also include the step of preparation protection materials, i.e. manufacturing method also
Include:
Step S270, photoresist is added in foamed material, and be uniformly mixed, to obtain protection materials.
Step S270 is carried out before step S220, to be used when forming protective layer 2, but step S270 and step S210
Sequencing it is not limited here.
It should be noted that although describing etching method and manufacturing method in the disclosure in the accompanying drawings with particular order
Each step, still, this does not require that or implies must execute these steps in this particular order, or have to carry out
Step shown in whole could realize desired result.Additional or alternative, it is convenient to omit certain steps close multiple steps
And it is executed for a step, and/or a step is decomposed into execution of multiple steps etc..
Those skilled in the art after considering the specification and implementing the invention disclosed here, will readily occur to its of the disclosure
Its embodiment.This application is intended to cover any variations, uses, or adaptations of the disclosure, these modifications, purposes or
Person's adaptive change follows the general principles of this disclosure and including the undocumented common knowledge in the art of the disclosure
Or conventional techniques.The description and examples are only to be considered as illustrative, and the true scope and spirit of the disclosure are by appended
Claim is pointed out.
Claims (10)
1. a kind of etching method characterized by comprising
The covering protection material on target layer, to form protective layer, the protection materials include photoresist and foamed material；
The protective layer is heated at the first temperature, until concave-convex surface of the protective layer far from the target layer
Injustice, first temperature are less than the temperature of photoresist hardening；
Harden the protective layer；
Carry out dry etching is carried out to the protective layer, until the surface irregularity of the target layer；
Remove the protective layer.
2. etching method according to claim 1, which is characterized in that harden the protective layer, comprising:
The protective layer is heated at the second temperature, the second temperature is not less than the temperature of photoresist hardening.
3. etching method according to claim 2, which is characterized in that the foamed material includes azo-compound, sulphonyl
At least one of hydrazine class compound and inorganic foamed material.
4. etching method according to claim 3, which is characterized in that the azo-compound include azodicarbonamide,
At least one in azodiisobutyronitrile, diisopropyl azodiformate；The sulfonyl hydrazines compound includes benzene sulfonyl hydrazide and right
At least one in toluene sulfonyl hydrazide；The inorganic foamed material includes carbonate.
5. etching method according to claim 3, which is characterized in that the foamed material is azo-compound, described the
One temperature is not less than 60 DEG C, and less than 100 DEG C；The second temperature is not less than 100 DEG C.
6. etching method according to claim 1, which is characterized in that the photoresist is positive photoresist.
7. etching method according to claim 1, which is characterized in that before forming the protective layer, the etching method
Further include:
Photoresist is added in foamed material, and is uniformly mixed, to obtain protection materials.
8. etching method according to claim 1, which is characterized in that the material of the target layer is metal or inorganic non-
Metal material.
9. a kind of manufacturing method of buffer layer characterized by comprising
Cushioned material layer is formed in a substrate；
In surface covering protection material of the cushioned material layer far from the substrate, to form protective layer, the protective layer packet
Include photoresist and foamed material；
The protective layer is heated at the first temperature, until concave-convex surface of the protective layer far from the substrate is not
Flat, first temperature is less than the temperature of photoresist hardening；
Harden the protective layer；
Carry out dry etching is carried out to the protective layer, until the surface irregularity of the cushioned material layer, to be buffered
Layer；
Remove the protective layer.
10. manufacturing method according to claim 9, which is characterized in that harden the protective layer, comprising:
The protective layer is heated at the second temperature, the second temperature is not less than the temperature of photoresist hardening.
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| CN201910518147.2A CN110190142B (en) | 2019-06-14 | 2019-06-14 | Texturing method and method for manufacturing cushion layer |
| PCT/CN2020/087035 WO2020248730A1 (en) | 2019-06-14 | 2020-04-26 | Texturing method and fabrication method for buffer layer |
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| CN201910518147.2A CN110190142B (en) | 2019-06-14 | 2019-06-14 | Texturing method and method for manufacturing cushion layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020248730A1 (en) * | 2019-06-14 | 2020-12-17 | 京东方科技集团股份有限公司 | Texturing method and fabrication method for buffer layer |
| CN115272498A (en) * | 2022-08-02 | 2022-11-01 | 新源劲吾(北京)科技有限公司 | Color photovoltaic panel surface texturing method and related equipment |
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| CN101752450A (en) * | 2008-12-08 | 2010-06-23 | 湖南天利恩泽太阳能科技有限公司 | Multiplex velvet making method for crystalline silicon solar battery slice |
| CN104485386A (en) * | 2014-11-21 | 2015-04-01 | 广东爱康太阳能科技有限公司 | Texturization method for polycrystalline silicon solar battery |
| US20150287868A1 (en) * | 2014-04-02 | 2015-10-08 | Korea Institute Of Energy Research | Ultra thin hit solar cell and fabricating method of the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101752450A (en) * | 2008-12-08 | 2010-06-23 | 湖南天利恩泽太阳能科技有限公司 | Multiplex velvet making method for crystalline silicon solar battery slice |
| US20150287868A1 (en) * | 2014-04-02 | 2015-10-08 | Korea Institute Of Energy Research | Ultra thin hit solar cell and fabricating method of the same |
| CN104485386A (en) * | 2014-11-21 | 2015-04-01 | 广东爱康太阳能科技有限公司 | Texturization method for polycrystalline silicon solar battery |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2020248730A1 (en) * | 2019-06-14 | 2020-12-17 | 京东方科技集团股份有限公司 | Texturing method and fabrication method for buffer layer |
| CN115272498A (en) * | 2022-08-02 | 2022-11-01 | 新源劲吾(北京)科技有限公司 | Color photovoltaic panel surface texturing method and related equipment |
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| CN110190142B (en) | 2021-02-02 |
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