CN110184575A - 具有高温阻挡性能的α-Ta涂层的制备方法 - Google Patents
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Abstract
本发明公开了一种具有高温阻挡性能的α‑Ta涂层的制备方法。所述方法以高纯Ta材料作为磁控溅射靶材,采用直流磁控溅射方法,在洁净的硅衬底表面进行溅射,背底真空度为2*10‑3Pa以下,工作气压为0.2~0.4Pa,以氩气作为溅射气体,衬底进行400℃~500℃的加热,制得具有高温阻挡性能的α‑Ta涂层。本发明通过基底原位加热辅助磁控溅射制备α‑Ta阻挡涂层,工艺简便且重复性好,制得的α‑Ta涂层具有较好的高温扩散阻挡性能,可以应用在集成电路中作为Cu‑Si器件中的扩散阻挡层。
Description
技术领域
本发明属于微电子材料技术领域,涉及一种具有高温阻挡性能的α-Ta涂层的制备方法。
背景技术
Cu具有低的电阻率、高的抗电迁移能力及相对低廉的价格,在高速超大型集成电路电路中应用广泛。但是Cu在高温环境下易发生扩散,并在Si基底上形成高电阻的化合物,导致器件失效。因此,需在Si和Cu导电层之间使用抑制扩散的阻挡层。
目前主要使用Ti/TiN(郭江超.半导体铜布线阻挡层技术的研究[D].浙江大学,2017.)、Ta/TaN(Wang W L,et al.The contact resistance reduction of Cuinterconnects by optimizing the crystal behavior of Ta/TaN diffusion barrier[J].Materials Science in Semiconductor Processing,2014,27:860-864.)、TaN(曹世成.铜互联工艺的氮化钽扩散阻挡层研究[D].哈尔滨工业大学.)和Ta作为扩散阻挡层。Ta作为难熔金属,没有与铜相关的化合物,并已被证明其可以有效地抑制Cu的扩散。另外,Ta单层阻挡层结构为单层金属阻挡层结构,因此具有电阻率低和电学性能较优的特点。金属Ta单质存在两种晶体结构。α-Ta为稳定相,为bcc结构,具有低硬度(8-12GPa)以及低电阻率(15-55μΩ·cm)。而β-Ta属于fcc结构,亚稳相,具有较高的硬度(15-22GPa)和高电阻率(180-300μΩ·cm)。两种晶体结构不同,性能差异很大。金属Ta单质的形成受限于粒子沉积状态,一般来说,磁控溅射沉积会导致β-Ta的亚稳态形成,而稳定α相通常是通过外加能量,如加热基板、添加偏压或改变基板材料获得的。相对而言,在集成电路的阻挡层应用中,电学性能较优的α-Ta被更多地运用于阻挡屏蔽层中。
传统方法是通过控制较高的背底真空度(~10-5Pa)以及控制比较苛刻的实验参数来制备阻挡效果较好的α-Ta。在同样的实验条件下,在磁控溅射背底真空度低于10-5Pa时,制备得到的样品为纯α-Ta,而在背底真空度为~10-3Pa的情况下制备得的样品则为β-Ta(Navid A A,Hodge A M.Nanostructured alpha and beta tantalum formation—Relationship between plasma parameters and microstructure[J].MaterialsScience&Engineering A,2012,536(none):49-56.。另外,在较低的背底真空度下通过附加偏压能够制备α-Ta(Arshi N,Lu J,Lee C G,et al.Power-dependent structural,morphological and electrical properties of electron beam evaporated tantalumfilms[J].Electronic Materials Letters,2013,9(6):841-844.)。
发明内容
本发明的目的是提供一种在较低的磁控溅射背底真空度的条件下,通过基底加热来制备具有良好的高温阻挡屏蔽性能的α-Ta涂层的方法。
实现本发明目的的技术方案如下:
具有高温阻挡性能的α-Ta涂层的制备方法,具体步骤如下:
以高纯Ta材料作为磁控溅射靶材,采用直流磁控溅射方法,在洁净的硅衬底表面进行溅射,背底真空度为2*10-3Pa以下,工作气压为0.2~0.4Pa,以氩气作为溅射气体,溅射功率为150±10W,衬底进行400℃~500℃的加热,氩气流量为30~40sccm。
本发明还提供基于上述Ta涂层的制备方法的制备Cu/Ta/Si涂层的方法,具体步骤如下:
步骤1,α-Ta涂层的制备:以高纯Ta材料作为磁控溅射靶材,采用直流磁控溅射方法,在洁净的硅衬底表面进行溅射,背底真空度为2*10-3Pa以下,工作气压为0.2~0.4Pa,以氩气作为溅射气体,溅射功率为150±10W,衬底进行400℃~500℃的加热,氩气流量为30~40sccm;
步骤2,Cu导电表面层的制备:以高纯Cu材料作为磁控溅射靶材,采用直流磁控溅射方法,在步骤1中得到的α-Ta涂层表面进行溅射,背底真空度为2*10-3Pa以下,溅射功率为15~50W,工作气压为0.2~0.4Pa,溅射气体为高纯氩气,氩气流量为30~40sccm。
本发明中,所述的硅衬底在进行磁控溅射前使用无水乙醇超声清洗。
本发明中,步骤1中,硅衬底的加热电流为5A。
本发明中,所述的高纯Ta材料为纯度≥99.95%的Ta材料。
本发明中,所述的氩气为纯度≥99.999%的高纯氩气。
本发明中,所述的溅射时间为30~120min。
与现有技术相比,本发明具有以下优点:
(1)本发明在较低的背底真空度(2*10-3Pa以下),通过基底原位加热辅助磁控溅射制备α-Ta阻挡涂层,工艺简便且重复性好,制得的α-Ta涂层具有较好的高温扩散阻挡性能,得到的涂层致密光滑,膜厚基本均匀,转化成本较低,易投入大批量生产,可以应用在集成电路中作为Cu-Si器件中的扩散阻挡层。
(2)采用本发明方法制备的α-Ta涂层作为Cu-Si扩散屏蔽层,制得的阻挡屏蔽层薄片电阻率低,有利于降低半导体器件的RC延迟,同时试样的机械综合性能较好,硬度较高,有利于增加膜抵抗变形的能力。
附图说明
图1为实施例1中Cu/Ta/Si三层SEM截面表征图。
图2为实施例1中Ta阻挡层的X射线衍射图。
图3为实施例1中Ta阻挡层的涂层结合力测试图。
图4为实施例1中Ta阻挡层表面的AFM表征图。
图5为FIB制样的截面图。
图6为试样退火后的EDS线扫描表征图。
具体实施方式
下面结合实施例和附图对本发明作进一步详述。
实施例1
(1)基材的预处理:取直径为20mm,厚度为500μm的硅单抛片,加入无水乙醇超声波清洗5min,并将其烘干。
(2)制备Ta过渡层:采用直流磁控溅射方法,在预处理的基材表面溅射一层Ta作为过渡层,使用的Ta靶纯度为99.95%,直流磁控溅射的具体工艺参数为:靶基距11cm,背底真空度低于2*10-3Pa,工作气压为0.3Pa,基底加热温度为500℃,氩气流量为40sccm,溅射功率为150W,控制溅射时间为90min。
(3)磁控溅射铜层:采用直流磁控溅射的方法,在步骤(2)制备的试样上使用磁控溅射的方法覆盖铜导电层。具体工艺参数为:靶基距11cm,背底真空度低于2*10-3Pa,工作气压为0.3Pa,基底加热温度为500℃,氩气流量为30sccm,溅射功率为25W,控制溅射时间为1h。
(4)退火测试:待磁控溅射完成后,在真空管式炉中进行600℃的退火,退火时间为60min。待试样冷却后,将试样截面进行线扫描处理,从而分析Cu原子在不同温度下的扩散结果,以表征Ta阻挡层的阻挡效果。图5为FIB制样的截面图。图6为试样退火后的EDS线扫描表征图。通过线扫描表征图像可以看出,在600℃下,Cu原子只有少部分通过Ta阻挡层,阻挡层未失效。
本实施例中,Cu/Ta/Si三层SEM截面表征图1所示,可以测得,Ta阻挡层的厚度为2μm。制备的Ta阻挡层的XRD衍射峰如图2所示。可以看出,此时制备得的阻挡层中的Ta以α-Ta存在,其晶粒大小为7.62nm。实例1中Ta涂层的结合力数据如图3所示。本份样品在外加力至大于28.6N时,涂层被破坏。相较低温度下制备得到的结合力(100℃,7.4N),实施例1中制备的样品的结合力有较大程度的提高。图4为实施例1中制备的Ta阻挡层的表面AFM表征。在实施例1中500℃原位加热所得的试样粗糙度Ra大小为299.7nm。此外,使用四探针电阻仪表征得到试样Ta层的薄片方块电阻为633.1mΩ,其电阻率为129.1μΩ·cm,具有较好的电学性能。使用岛津动态超显微硬度计进行显微硬度测试,可得该试样的显微平均硬度为17.44GPa,弹性模量为202.0GPa,具备较好的机械性能。
实施例2
(1)基材的预处理:取直径为20mm,厚度为500μm的硅单抛片,加入无水乙醇超声波清洗5min,并将其烘干。
(2)制备Ta过渡层:采用直流磁控溅射方法,在预处理的基材表面溅射一层Ta作为过渡层,使用的Ta靶纯度为99.95%,所述直流磁控溅射方法的具体工艺参数为:靶基距11cm,背底真空度低于2*10-3Pa,工作气压为0.3Pa,基底加热温度为400℃,氩气流量为40sccm,溅射功率为150W,控制溅射时间为90min。
(3)磁控溅射铜层:采用直流磁控溅射的方法,在步骤(2)制备的试样上使用磁控溅射的方法覆盖铜导电层。具体工艺参数为:靶基距11cm,背底真空度低于2*10-3Pa,工作气压为0.3Pa,氩气流量为30sccm,溅射功率为25W,控制溅射时间为1h。
(3)本实施例中,Ta阻挡层的厚度约为1.89μm。XRD表征显示此时制备得的阻挡层中的Ta以α-Ta存在。根据Debye-Scherrer公式,可以计算出此时的晶粒大小为9.80nm。在外加力至大于24.15N时,涂层被破坏。在实施例2中400℃原位加热所得的试样粗糙度Ra大小为122.50nm。此外,使用四探针电阻仪表征得到试样Ta层的薄片方块电阻为696.3mΩ,其电阻率为131.2μΩ·cm,具有较好的电学性能。使用岛津动态超显微硬度计进行显微硬度测试,可得该试样的显微平均硬度为13.99GPa,弹性模量为203.8GPa,机械性能适中。
对比例1
本对比例与实施例1基本相同,唯一不同的是制备Ta过渡层时,基底加热温度为300℃。
制得的样品物相组成为α+β相,其中β-Ta相为主导相。涂层薄膜电阻率电阻率为196.2μΩ·cm,显微硬度平均值为15.24Gpa,弹性模量平均值为190Gpa。涂层晶粒尺寸分布均匀,为纳米级别,表面粗糙度2.088nm。涂层在应力施加至6-7N开始有破裂迹象,在应力10-13N处开始出现连续峰,开始完全破裂。
对比例2
本对比例与实施例1基本相同,不同的是制备Ta过渡层时,基底未加热,溅射气压为0.25Pa。
制得的样品物相组成为α-Ta和β-Ta的混合相,其中α-Ta为主导相。涂层方块电阻率为203.0μΩ·cm,显微硬度平均值为16.69Gpa,弹性模量平均值为210Gpa。晶粒尺寸在纳米级别,表面粗糙度为12.655nm,表面颗粒尺寸分布不均匀,存在少量大尺寸颗粒。涂层与基底有良好的结合强度,应力施加至16-17N开始有破裂迹象,在18-20N处开始完全破裂。
Claims (7)
1.具有高温阻挡性能的α-Ta涂层的制备方法,其特征在于,具体步骤如下:
以高纯Ta材料作为磁控溅射靶材,采用直流磁控溅射方法,在洁净的硅衬底表面进行溅射,背底真空度为2*10-3Pa以下,工作气压为0.2~0.4Pa,以氩气作为溅射气体,溅射功率为150±10W,衬底进行400℃~500℃的加热,氩气流量为30~40sccm。
2.Cu/Ta/Si涂层的制备方法,其特征在于,具体步骤如下:
步骤1,α-Ta涂层的制备:以高纯Ta材料作为磁控溅射靶材,采用直流磁控溅射方法,在洁净的硅衬底表面进行溅射,背底真空度为2*10-3Pa以下,工作气压为0.2~0.4Pa,以氩气作为溅射气体,溅射功率为150±10W,衬底进行400℃~500℃的加热,氩气流量为30~40sccm;
步骤2,Cu导电表面层的制备:以高纯Cu材料作为磁控溅射靶材,采用直流磁控溅射方法,在步骤1中得到的α-Ta涂层表面进行溅射,背底真空度为2*10-3Pa以下,溅射功率为15~50W,工作气压为0.2~0.4Pa,溅射气体为高纯氩气,氩气流量为30~40sccm。
3.根据权利要求1或2所述的制备方法,其特征在于,所述的硅衬底在进行磁控溅射前使用无水乙醇超声清洗。
4.根据权利要求1或2所述的制备方法,其特征在于,硅衬底的加热电流为5A。
5.根据权利要求1或2所述的制备方法,其特征在于,所述的高纯Ta材料为纯度≥99.95%的Ta材料。
6.根据权利要求1或2所述的制备方法,其特征在于,所述的氩气为纯度≥99.999%的高纯氩气。
7.根据权利要求1或2所述的制备方法,其特征在于,所述的溅射时间为30~120min。
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CN113235060A (zh) * | 2021-05-12 | 2021-08-10 | 中国兵器工业第五九研究所 | 一种全α相钽涂层的制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104253108A (zh) * | 2013-06-27 | 2014-12-31 | 台湾积体电路制造股份有限公司 | 互连结构及其形成方法 |
CN108342705A (zh) * | 2018-03-14 | 2018-07-31 | 南京理工大学 | 具有自愈合功能的Ta基高温防护涂层的制备方法 |
-
2019
- 2019-05-23 CN CN201910432948.7A patent/CN110184575A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104253108A (zh) * | 2013-06-27 | 2014-12-31 | 台湾积体电路制造股份有限公司 | 互连结构及其形成方法 |
CN108342705A (zh) * | 2018-03-14 | 2018-07-31 | 南京理工大学 | 具有自愈合功能的Ta基高温防护涂层的制备方法 |
Non-Patent Citations (2)
Title |
---|
MASAYUKI SHIOJIRI 等: "Preparation of Low-Resistivity α-Ta Thin Films on (001) Si by Conventional DC Magnetron Sputtering", 《JAPANESE JOURNAL OF APPLIED PHYSICS》 * |
郑光锋等: "集成电路中Ta 扩散阻挡层对铜布线电迁移性能的影响", 《金属热处理》 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113235060A (zh) * | 2021-05-12 | 2021-08-10 | 中国兵器工业第五九研究所 | 一种全α相钽涂层的制备方法 |
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