CN110176503A - A kind of cadmium telluride power generating glass - Google Patents
A kind of cadmium telluride power generating glass Download PDFInfo
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- CN110176503A CN110176503A CN201910484014.8A CN201910484014A CN110176503A CN 110176503 A CN110176503 A CN 110176503A CN 201910484014 A CN201910484014 A CN 201910484014A CN 110176503 A CN110176503 A CN 110176503A
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- 239000011521 glass Substances 0.000 title claims abstract description 54
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 21
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000005297 pyrex Substances 0.000 claims abstract description 17
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 10
- 238000001816 cooling Methods 0.000 claims description 40
- 238000010438 heat treatment Methods 0.000 claims description 11
- 230000005855 radiation Effects 0.000 claims description 10
- 230000003667 anti-reflective effect Effects 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000004519 grease Substances 0.000 claims description 6
- YKYOUMDCQGMQQO-UHFFFAOYSA-L Cadmium chloride Inorganic materials Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000002209 hydrophobic effect Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000002156 mixing Methods 0.000 abstract description 5
- 238000002834 transmittance Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 239000005357 flat glass Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 241000127225 Enceliopsis nudicaulis Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Power Engineering (AREA)
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to area of solar cell more particularly to a kind of cadmium telluride power generating glass, from lower to upper successively include glass substrate, transparent oxide layer, Window layer, absorbed layer and back-contact electrode；The glass substrate is the Pyrex with a thickness of 2-3mm, and the transparent oxide layer is the In for mixing Sn2O3Film, the Window layer are the CdS layer with a thickness of 0.4-0.5 μm, and the absorbed layer is the CdTe layer with a thickness of 3-5 μm.Cadmium telluride power generating glass proposed by the present invention, glass substrate light transmittance is high, and heat-resisting quantity is good, and the more excellent transparent oxide layer of cooperation translucency greatly improves the incident photon-to-electron conversion efficiency of power generating glass.
Description
Technical field
The present invention relates to area of solar cell more particularly to a kind of cadmium telluride power generating glass.
Background technique
With the shortage of global warming, the deterioration of the ecological environment and conventional energy resource, more and more countries start energetically
Develop solar utilization technique.Solar energy power generating is the clean energy resource of zero-emission, have it is safe and reliable, noiseless, without dirt
The advantages such as dye, construction period short, long service life, thus be concerned.Cadmium telluride is a kind of P-type semiconductor material of direct band gap
Material, generally makees absorbed layer in solar cells, since its direct band gap is 1.45eV, is best suited for photovoltaic energy conversion,
So that optical absorptivity of about 2 microns of thick cadmium telluride absorbed layers more than its band gap reaches 90% and is possibly realized, permission
Highest theoretical conversion efficiencies are up to 28% under conditions of air quality AM1.5.Application No. is the patents of CN201811029637.8
It proposes " a kind of high efficiency cadmium telluride diaphragm solar battery ", it is thin by being rubbed in the one layer of anti-reflection of preparation of the back side of base plate glass
Film, the transmitance of Lai Tigao light, and then improve photoelectric conversion efficiency.But conventional substrate glass itself light light transmission efficiency compared with
It is low, and non-refractory, technique make and are limited, and influence the plated film of transparent oxide layer.
Summary of the invention
In view of the above problems, the present invention proposes a kind of cadmium telluride power generating glass, glass substrate light transmittance is high, heat-resisting quantity
Good, the more excellent transparent oxide layer of cooperation translucency greatly improves the incident photon-to-electron conversion efficiency of power generating glass.
In order to achieve the above object, the present invention is realized using following technical scheme: a kind of cadmium telluride power generating glass, from it is lower toward
On successively include glass substrate, transparent oxide layer, Window layer, absorbed layer and back-contact electrode；The glass substrate be with a thickness of
The Pyrex of 2-3mm, the transparent oxide layer are the In for mixing Sn2O3Film, the Window layer are the CdS with a thickness of 0.4-0.5 μm
Layer, the absorbed layer are the CdTe layer with a thickness of 3-5 μm.
The present invention using Pyrex as glass substrate, high temperature resistance is excellent, compared to use traditional soda-lime glass,
Window-glass reaches 12% or so transfer efficiency, and Pyrex can achieve 16% or so, and the transparent Indium that the present invention uses
Layer is the In to mix Sn2O3Film, using traditional soda-lime glass or window-glass, heat-resisting quantity but, is not able to satisfy in technique
In2O3The plated film of film, therefore Pyrex and In of the invention2O3Film has excellent arranging effect, mixes the In of Sn2O3Film is meeting
While higher light transmittance, there is outstanding electric conductivity, and is easy to obtain when technique makes and carries out acid solution etching subtle
Figure, industrial controllability is higher.
Preferably, power generating glass is sequentially depositing in glass substrate, transparent oxide layer, Window layer and absorbed layer and is prepared into film
Afterwards, through Ar-CdCl2Heat treatment, the temperature of the heat treatment is 380-405 DEG C, when prepared by CdTe battery, it will usually promote CdTe
Diffusion phenomena between the interface CdS, rough form alloy in interface, the energy gap of CdS layer are caused to reduce, into
And the penetrability of light is caused to reduce, battery efficiency is influenced, the present invention uses the CdCl with Ar atmosphere to film2Heat treatment, has
Effect improves the crystalline condition of film, and after being heat-treated in 380-405 DEG C of environment, it is raw that film layer border face shows longitudinal stratiform
Long phenomenon and particle surface becomes smooth, and partial size significantly increases, and absorbing properties are remarkably reinforced.
Preferably, SnO is deposited between the transparent oxide layer and Window layer2Film, the SnO2And In2O3Weight
Than that can diffuse into CdS/CdTe layers in the high-temperature process for preparing power generating glass film for 1:8.5-9, In, introducing is not required to
The N-type CdTe wanted, the present invention deposit SnO when preparing power generating glass battery between transparent oxide layer and Window layer2Film,
The diffusion phenomena of In can be prevented, while the light transmittance and conductivity of transparent oxide layer can be improved.
Preferably, the outer surface of the Pyrex is coated with anti-reflective film, i.e., reduces incident ray in the plane of incidence of the sun
Reflection, improve the transmitance of sunray, and then improve power generating glass to the absorption efficiency and utilization rate of light.
It is further preferred that the anti-reflective film with a thickness of 50-80nm, the refractive index of the anti-reflective film is 1.3-
1.5。
Preferably, the back side of the back-contact electrode is equipped with cooling piece, and the back side of the cooling piece is covered with heat-conducting plate, generates electricity
Glass is since long-time contacts sunlight, while there is electric current flowing in inside, it is easy to and it generates heat, influences incident photon-to-electron conversion efficiency, the present invention
Cooling piece is arranged in the back side of back-contact electrode, carries out heat exchange, keeps the lower temperature of power generating glass.
It is further preferred that the back side of the cooling piece is covered with heat-conducting plate, vertically connects the heat-conducting plate and be arranged in parallel with
Several cooling fins, the heat-conducting plate and the cooling fin are connected by thermal grease, and the heat exchanged from cooling piece is thermally conductive
The heat-conducting plate haveing excellent performance is transmitted to cooling fin and is quickly and effectively radiated, and improves the more longlasting temperature reduction performance of cooling piece, leads
The contact connectio of backing and cooling fin point insulating layer easy to form, the case where causing heat that can not discharge, use thermal grease can be with
It effectively avoids contact with and a little forms insulating layer, improve heat transfer efficiency.
Still more preferably, the cooling fin is mesh-structured, and there is thermal radiation coating on the surface of cooling fin, mesh-structured
The contact area of cooling fin and air can be increased, the heat radiation rate of cooling fin can be improved in thermal radiation coating, to improve
The radiation efficiency of cooling fin.
Still more preferably, the spacing of the cooling fin is 30-50cm, and cooling fin spacing should not be excessively close, is easy to cause
The hot gas that heat radiation comes out accumulates stop around cooling fin, influences subsequent heat radiation process, controlling certain spacing has
The heat released is taken away conducive to air.
Preferably, the outer surface of the Pyrex is coated with hydrophobic layer, reduces rainwater in the stop on borosilicate surface, avoids rain
The residual of stain reduces the contact area of Pyrex and sunlight.
The beneficial effects of the present invention are:
(1) cadmium telluride power generating glass provided by the invention, light penetration and photoelectricity transfer efficient are high, and power generation process median surface it
Between stablize, stable power can be provided.
(2) present invention can bear higher temperature during the preparation process, and industrial controllability is higher.
Detailed description of the invention
Accompanying drawing 1 is the structural representation of the present invention；
1- glass-base, 2- transparent oxide layer, 3- Window layer, 4- absorbed layer, 5- back-contact electrode, 6- cooling piece, 7- heat-conducting plate,
8- cooling fin, 9- anti-reflective film.
Specific embodiment
This specific implementation method is only explanation of the invention, is not limitation of the present invention.Those skilled in the art
Member's any change made after having read specification of the invention, as long as within the scope of the claims, it all will be by
To the protection of Patent Law.
Embodiment 1:
As shown in Fig. 1, a kind of cadmium telluride power generating glass successively includes glass substrate 1, transparent oxide layer 2, window from lower to upper
Layer 3, absorbed layer 4, back-contact electrode 5；Glass substrate 1 is the Pyrex with a thickness of 2mm, and the outer surface of Pyrex is coated with thickness
Degree be 50nm, the anti-reflective film 9 that refractive index is 1.3, transparent oxide layer is the In for mixing Sn2O3Film, Window layer are with a thickness of 0.4 μm
CdS layer, absorbed layer is with a thickness of 3 μm of CdTe layer, and back-contact electrode is the carbon nanotube for being deposited with metal Al, wherein hair
Electric glass is sequentially depositing after being prepared into film in glass substrate 1, transparent oxide layer 2, Window layer 3 and absorbed layer 4, through Ar-CdCl2
Heat treatment, the temperature of heat treatment are 380 DEG C.The back side of back-contact electrode 5 is also covered with cooling piece 6, and the back side of cooling piece 6, which is covered with, leads
Hot plate 7, the vertical heat-conducting plate 7 that connects are arranged in parallel with the mesh-structured cooling fin 8 that 3 pieces of spacing are 30cm, heat-conducting plate 7 and heat dissipation
Piece 8 is connected by thermal grease, and the surface of cooling fin 8 is coated with thermal radiation coating.
Embodiment 2:
A kind of cadmium telluride power generating glass successively connects including glass substrate, transparent oxide layer, Window layer, absorbed layer, back from lower to upper
Touched electrode；Glass substrate is the Pyrex with a thickness of 3mm, and the outer surface of Pyrex is coated with is with a thickness of 80mm, refractive index
1.5 anti-reflective film, transparent oxide layer are the In for mixing Sn2O3Film is deposited with SnO between transparent oxide layer and Window layer2Film,
SnO2And In2O3Weight ratio be 1:9, Window layer is with a thickness of 0.4 μm of CdS layer, and absorbed layer is the CdTe layer with a thickness of 3 μm,
Back-contact electrode is the carbon nanotube for being deposited with metal Al, wherein power generating glass is in glass substrate, transparent oxide layer, Window layer
It is sequentially depositing with absorbed layer after being prepared into film, through Ar-CdCl2Heat treatment, the temperature of heat treatment are 400 DEG C.Back-contact electrode
The back side be also covered with cooling piece, the back side of cooling piece is covered with heat-conducting plate, it is vertical connect heat-conducting plate and be arranged in parallel with 2 pieces of spacing be
The mesh-structured cooling fin of 50cm, heat-conducting plate are connected with cooling fin by thermal grease, and there is thermal radiation coating on the surface of cooling fin.
Embodiment 3:
A kind of cadmium telluride power generating glass successively connects including glass substrate, transparent oxide layer, Window layer, absorbed layer, back from lower to upper
Touched electrode；Glass substrate is the Pyrex with a thickness of 2.5mm, and the outer surface of Pyrex is coated with hydrophobic layer, transparent oxide layer
For the In for mixing Sn2O3Film is deposited with SnO between transparent oxide layer and Window layer2Film, SnO2And In2O3Weight ratio be 1:
8.5, Window layer is the CdS layer with a thickness of 0.45 μm, and absorbed layer is the CdTe layer with a thickness of 4 μm, and back-contact electrode is to be deposited with
The carbon nanotube of metal Al, wherein power generating glass is sequentially depositing system in glass substrate, transparent oxide layer, Window layer and absorbed layer
After at film, through Ar-CdCl2Heat treatment, the temperature of heat treatment are 400 DEG C.The back side of back-contact electrode is also covered with cooling piece,
The back side of cooling piece is covered with heat-conducting plate, and the vertical heat-conducting plate that connects is arranged in parallel with the mesh-structured heat dissipation that 2 pieces of spacing are 45cm
Piece, heat-conducting plate and cooling fin are connected by thermal grease, and there is thermal radiation coating on the surface of cooling fin.
Electric performance test is carried out to embodiment 1-3, obtains data as shown in table 1 below:
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of cadmium telluride power generating glass, it is characterised in that: from lower to upper successively include glass substrate, transparent oxide layer, window
Layer, absorbed layer and back-contact electrode；The glass substrate is the Pyrex with a thickness of 2-3mm, and the transparent oxide layer is to mix
The In of Sn2O3Film, the Window layer are the CdS layer with a thickness of 0.4-0.5 μm, and the absorbed layer is the CdTe with a thickness of 3-5 μm
Layer.
2. a kind of cadmium telluride power generating glass according to claim 1, it is characterised in that: power generating glass glass substrate, thoroughly
Bright oxide layer, Window layer and absorbed layer are sequentially depositing be prepared into film after, through Ar-CdCl2Heat treatment, the temperature of the heat treatment
It is 380-405 DEG C.
3. a kind of cadmium telluride power generating glass according to claim 1, it is characterised in that: the transparent oxide layer and Window layer
Between be deposited with SnO2Film, the SnO2And In2O3Weight ratio be 1:8.5-9.
4. a kind of cadmium telluride power generating glass according to claim 1, it is characterised in that: the outer surface of the Pyrex applies
There is anti-reflective film.
5. a kind of cadmium telluride power generating glass according to claim 4, it is characterised in that: the anti-reflective film with a thickness of
50-80nm, the refractive index of the anti-reflective film are 1.3-1.5.
6. a kind of cadmium telluride power generating glass according to claim 1, it is characterised in that: the back side of the back-contact electrode is set
There is cooling piece.
7. a kind of cadmium telluride power generating glass according to claim 5, it is characterised in that: the back side of the cooling piece, which is covered with, leads
Hot plate vertically connects the heat-conducting plate and is arranged in parallel with several cooling fins, and the heat-conducting plate and the cooling fin pass through thermal grease
Connection.
8. a kind of cadmium telluride power generating glass according to claim 7, it is characterised in that: the cooling fin be it is mesh-structured,
There is thermal radiation coating on the surface of cooling fin.
9. a kind of cadmium telluride power generating glass according to claim 7, it is characterised in that: the spacing of the cooling fin is 30-
50cm。
10. a kind of cadmium telluride power generating glass according to claim 1, it is characterised in that: the outer surface of the Pyrex
It is coated with hydrophobic layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910484014.8A CN110176503A (en) | 2019-06-05 | 2019-06-05 | A kind of cadmium telluride power generating glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910484014.8A CN110176503A (en) | 2019-06-05 | 2019-06-05 | A kind of cadmium telluride power generating glass |
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| Publication Number | Publication Date |
|---|---|
| CN110176503A true CN110176503A (en) | 2019-08-27 |
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ID=67697089
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910484014.8A Pending CN110176503A (en) | 2019-06-05 | 2019-06-05 | A kind of cadmium telluride power generating glass |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113264678A (en) * | 2021-04-02 | 2021-08-17 | 容科培 | Novel flexible power generation glass processing technology |
| CN113429128A (en) * | 2021-04-29 | 2021-09-24 | 容科培 | Processing technology of special flexible multicolor monomer power generation glass for highway |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101295738A (en) * | 2008-04-15 | 2008-10-29 | 福建钧石能源有限公司 | Film and manufacturing method thereof, solar battery with the same |
| CN102447008A (en) * | 2010-09-30 | 2012-05-09 | 通用电气公司 | Photovoltaic device and method for making |
| CN103050554A (en) * | 2012-12-07 | 2013-04-17 | 上海交通大学 | Solar heat collection and power generation integral film and power generation and heat collection water heater comprising same |
| CN103227232A (en) * | 2012-01-30 | 2013-07-31 | 亚树科技股份有限公司 | Manufacturing method for roughened transparent conducting base plate |
| CN104609738A (en) * | 2013-11-01 | 2015-05-13 | 北京有色金属研究总院 | Method used for increasing silicon dioxide antireflection film hole stability |
| CN104851931A (en) * | 2015-04-14 | 2015-08-19 | 湖南共创光伏科技有限公司 | Cadmium telluride thin-film solar cell with gradient structure and manufacture method thereof |
| CN106784036A (en) * | 2016-12-28 | 2017-05-31 | 成都中建材光电材料有限公司 | One kind doping cadmium telluride thin-film battery and preparation method thereof |
| CN206259371U (en) * | 2016-11-22 | 2017-06-16 | 浙江昱辉阳光能源江苏有限公司 | A kind of porous silicon solar battery assembly |
| CN109384947A (en) * | 2018-12-04 | 2019-02-26 | 哈尔滨工业大学 | A kind of preparation method of topological structure titanium dioxide super hydrophobic material |
-
2019
- 2019-06-05 CN CN201910484014.8A patent/CN110176503A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101295738A (en) * | 2008-04-15 | 2008-10-29 | 福建钧石能源有限公司 | Film and manufacturing method thereof, solar battery with the same |
| CN102447008A (en) * | 2010-09-30 | 2012-05-09 | 通用电气公司 | Photovoltaic device and method for making |
| CN103227232A (en) * | 2012-01-30 | 2013-07-31 | 亚树科技股份有限公司 | Manufacturing method for roughened transparent conducting base plate |
| CN103050554A (en) * | 2012-12-07 | 2013-04-17 | 上海交通大学 | Solar heat collection and power generation integral film and power generation and heat collection water heater comprising same |
| CN104609738A (en) * | 2013-11-01 | 2015-05-13 | 北京有色金属研究总院 | Method used for increasing silicon dioxide antireflection film hole stability |
| CN104851931A (en) * | 2015-04-14 | 2015-08-19 | 湖南共创光伏科技有限公司 | Cadmium telluride thin-film solar cell with gradient structure and manufacture method thereof |
| CN206259371U (en) * | 2016-11-22 | 2017-06-16 | 浙江昱辉阳光能源江苏有限公司 | A kind of porous silicon solar battery assembly |
| CN106784036A (en) * | 2016-12-28 | 2017-05-31 | 成都中建材光电材料有限公司 | One kind doping cadmium telluride thin-film battery and preparation method thereof |
| CN109384947A (en) * | 2018-12-04 | 2019-02-26 | 哈尔滨工业大学 | A kind of preparation method of topological structure titanium dioxide super hydrophobic material |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113264678A (en) * | 2021-04-02 | 2021-08-17 | 容科培 | Novel flexible power generation glass processing technology |
| CN113429128A (en) * | 2021-04-29 | 2021-09-24 | 容科培 | Processing technology of special flexible multicolor monomer power generation glass for highway |
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