CN110161606A - A kind of preparation method of coupling grating - Google Patents
A kind of preparation method of coupling grating Download PDFInfo
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- CN110161606A CN110161606A CN201910440604.0A CN201910440604A CN110161606A CN 110161606 A CN110161606 A CN 110161606A CN 201910440604 A CN201910440604 A CN 201910440604A CN 110161606 A CN110161606 A CN 110161606A
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- 230000008878 coupling Effects 0.000 title claims abstract description 42
- 238000010168 coupling process Methods 0.000 title claims abstract description 42
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000010276 construction Methods 0.000 claims abstract description 32
- 230000003287 optical effect Effects 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 29
- 238000001459 lithography Methods 0.000 claims abstract description 12
- 230000004888 barrier function Effects 0.000 claims abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- 229910052681 coesite Inorganic materials 0.000 claims description 16
- 229910052906 cristobalite Inorganic materials 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052682 stishovite Inorganic materials 0.000 claims description 16
- 229910052905 tridymite Inorganic materials 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 description 6
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- 238000005137 deposition process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
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Abstract
This application discloses a kind of preparation methods of coupling grating, belong to the sub- manufacturing technology field of silicon based opto-electronics, solve the problems, such as coupling grating preparation process complexity, the more, higher cost using reticle quantity in the prior art.The preparation method of the application includes the following steps: that one SOI substrate of offer, SOI substrate are divided into the grating region Poly-Si and the grating region Si in the horizontal direction, sequentially form Poly-Si layers and hard mask layer on the surface of SOI substrate；To hard mask layer and Poly-Si layers of progress lithography and etching, it is etched to the top silicon surface of SOI substrate, forms the first optical grating construction in the grating region Poly-Si；It is performed etching while the top silicon layer to the grating region Si performs etching using hard mask layer as barrier layer top silicon layer corresponding to the first optical grating construction, ultimately forms Poly-Si grating and Si grating, coupling grating is made.The preparation method of the application can be used for the preparation of coupling grating.
Description
Technical field
This application involves a kind of sub- manufacturing technology of silicon based opto-electronics more particularly to a kind of preparation methods of coupling grating.
Background technique
In the prior art, SOI substrate can be divided into Poly-Si light in the horizontal direction in the preparation process of coupling grating
Grid region and the grating region Si, coupling grating it is conventional the production method is as follows: deposit Poly-Si layer 4, progress first on soi substrates
Secondary etching, only retains the Poly-Si layer 4 in the grating region Poly-Si, remaining Poly-Si layer 4 is etched；To Poly-Si grating
Poly-Si floor 4 and top silicon layer 3 in area carry out second and etch, and obtain Poly-Si grating A；To the top silicon layer in the grating region Si
3 carry out third time etching, Si grating B are obtained, referring to Fig. 1 a to Fig. 1 c.It is apparent that being needed using the above method using three layers of light
Cutting blocks for printing, etching can form Poly-Si grating A and Si grating B three times for progress, and process is complicated, and precision high light cut blocks for printing at
This is higher, and then increases the preparation cost of coupling grating.
Summary of the invention
In view of above-mentioned analysis, the application is intended to provide a kind of preparation method of coupling grating, solves in the prior art
The problem of coupling grating preparation process is complicated, higher cost more using reticle quantity.
The purpose of the application is mainly achieved through the following technical solutions:
This application provides a kind of preparation methods of coupling grating, include the following steps:
A SOI substrate is provided, SOI substrate is divided into the grating region Poly-Si and the grating region Si in the horizontal direction, in SOI substrate
Surface sequentially form Poly-Si layers and hard mask layer；
To hard mask layer and Poly-Si layers of progress lithography and etching, it is etched to top silicon surface, in the grating region Poly-Si
Form the first optical grating construction；
Top silicon layer corresponding to the first optical grating construction and the top silicon layer of the grating region Si perform etching, and form Poly-Si grating
With Si grating, coupling grating is made.
In a kind of possible design, to hard mask layer and Poly-Si layers of progress lithography and etching, it is etched to top silicon layer table
Face forms the first optical grating construction in the grating region Poly-Si and includes the following steps:
The first photoresist layer is formed far from SOI substrate side in hard mask layer；
To the first photoresist layer, hard mask layer and Poly-Si layers of progress lithography and etching, it is etched to top silicon surface, is gone
Except the first photoresist layer, the first optical grating construction is formed in the grating region Poly-Si.
In a kind of possible design, the top silicon layer of top silicon layer corresponding to the first optical grating construction and the grating region Si is carved
Erosion, forms Poly-Si grating and Si grating includes the following steps:
The second photoresist layer is formed in the first optical grating construction and top silicon layer；
Photoetching and development are carried out to corresponding second photoresist layer of the first optical grating construction and the grating region Si, so that the first grating
Structural region is opened, by the second optical grating construction pattern transfer to the second photoresist layer in the grating region Si；
Using hard mask layer and the second photoresist layer as etching barrier layer top silicon layer corresponding to the first optical grating construction and
The corresponding top silicon layer of second optical grating construction performs etching, and removes remaining second photoresist layer, forms Poly-Si grating and Si light
Grid.
In a kind of possible design, Poly-Si grating with a thickness of 198nm~242nm；Si grating with a thickness of 63nm
~77nm.
In a kind of possible design, hard mask layer is SiN layer or SiO2Layer.
In a kind of possible design, SiN layer is made of pecvd process or LPCVD technique；SiO2Layer uses PECVD
Or LPCVD technique is made.
In a kind of possible design, hard mask layer with a thickness of 3nm~20nm.
It in a kind of possible design, is formed after Poly-Si grating and Si grating, further includes before coupling grating is made
Following steps: cleaning removes remaining hard mask layer.
In a kind of possible design, hard mask layer is SiN layer, using H3PO4Cleaning removes remaining hard mask layer；Firmly
Mask layer is SiO2Layer removes remaining hard mask layer using HF cleaning.
In a kind of possible design, SOI substrate includes the Si substrate, buried oxide layer and top silicon layer of stacking, the system of SOI substrate
Preparation Method includes the following steps:
One Si substrate is provided；
Buried oxide layer and top silicon layer are formed on the surface of Si substrate.
Compared with prior art, the application can at least realize one of following beneficial effect:
A) preparation method of coupling grating provided by the present application, using hard exposure mask combination self-registered technology, only in step 3 and
Photoetching involved in step 5, that is to say, that only need to carry out Twi-lithography, be just capable of forming Poly-Si light using Twi-lithography version
Grid and Si grating, complete the preparation of coupling grating, to reduce the access times and usage quantity of reticle, simplify coupling
The preparation process of grating reduces the preparation cost of coupling grating.
B) preparation method of coupling grating provided by the present application, in practical applications, the thickness of hard mask layer is by Poly-Si
The etching selection ratio of layer determines, since Poly-Si layers to SiO2Etching selection ratio be higher than to the etching selection ratio of SiN, SiN layer
Or SiO2When layer is used as hard mask layer, SiO2The thickness of layer can be less than SiN layer, therefore, compared to SiN layer, SiO2Layer can be more
It easily removes, reduces the loss to Poly-Si layers.
Other feature and advantage of the application will illustrate in the following description, also, partial become from specification
It obtains it is clear that being understood and implementing the application.The purpose of the application and other advantages can be by written explanations
Specifically noted structure is achieved and obtained in book and attached drawing.
Detailed description of the invention
Attached drawing is only used for showing the purpose of specific embodiment, and is not considered as the limitation to the application, in entire attached drawing
In, identical reference symbol indicates identical component.
Fig. 1 a to Fig. 1 c is the preparation flow figure of existing middle coupling grating；
Fig. 2 a to Fig. 2 h be the application coupling grating in step 1 to step 7 preparation flow figure.
Appended drawing reference:
A-Poly-Si grating；B-Si grating；1-Si substrate；2- barrier oxide layer；3- pushes up silicon layer；4-Poly-Si layers；5-
Hard mask layer；The first photoresist layer of 6-；The second photoresist layer of 7-.
Specific embodiment
Specifically describing preferred embodiment of the present application with reference to the accompanying drawing, wherein attached drawing constitutes part of this application,
And it is used to illustrate the principle of the application together with embodiments herein.
This application provides a kind of preparation methods of coupling grating, and a to Fig. 2 g, includes the following steps: referring to fig. 2
Step 1: providing a SOI substrate, which can be divided into the grating region Poly-Si and Si grating in the horizontal direction
Area, wherein the grating region Poly-Si is the region for being used to form Poly-Si grating A, and the grating region Si is to be used to form Si grating B
Region sequentially forms Poly-Si layer 4 and hard mask layer 5 on the surface of SOI substrate, referring to fig. 2 a；
Step 2: forming the first photoresist layer 6 far from SOI substrate side in hard mask layer 5, referring to fig. 2 b；
Step 3: lithography and etching being carried out to the first photoresist layer 6, hard mask layer 5 and Poly-Si layer 4, is etched to top silicon
3 surface (top layer silicon, Top-Si) of layer, remove the first photoresist layer 6, form the first optical grating construction in the grating region Poly-Si, can be with
Understand, along the direction for being gradually distance from SOI substrate, which may include the remaining Poly- stacked gradually
Si layer 4 and hard mask layer 5, referring to fig. 2 c and Fig. 2 d；
Step 4: forming the second photoresist layer 7 in the first optical grating construction and the top silicon layer 3 of SOI substrate, referring to fig. 2 e；
Step 5: photoetching and development are carried out to corresponding second photoresist layer 7 of the first optical grating construction and the grating region Si, so that
First optical grating construction region is opened, by the second optical grating construction pattern transfer to the second photoresist layer in the grating region Si, referring to figure
2f；
Step 6: using hard mask layer 5 and the second photoresist layer 7 as etching barrier layer, using self-registered technology, to
The corresponding top silicon layer 3 of one optical grating construction and the corresponding top silicon layer 3 of the second optical grating construction perform etching, referring to fig. 2 g；
Step 7: remaining second photoresist layer 7 of removal forms Poly-Si grating A and Si grating B, coupling grating is made,
H referring to fig. 2.
Compared with prior art, the preparation method of coupling grating provided by the present application, using hard exposure mask combination autoregistration work
Skill, the only photoetching involved in step 3 and step 5, that is to say, that only need to carry out Twi-lithography, use Twi-lithography version energy
Poly-Si grating A and Si grating B is enough formed, the preparation of coupling grating is completed, to reduce the access times of reticle and make
With quantity, the preparation process of coupling grating is simplified, reduces the preparation cost of coupling grating.
It should be noted that in order to effectively promote grating coupling efficiency, the thickness of above-mentioned Poly-Si grating A can be with
In 198nm~242nm, the thickness of Si grating B be can control in 63nm~77nm for control.Correspondingly, in above-mentioned preparation method,
In step 1, Poly-Si layer 4 and hard mask layer 5 with a thickness of 135nm~165nm can be sequentially formed on the surface of SOI substrate,
In step 6, can top silicon layer 3 corresponding to the first optical grating construction and the corresponding top silicon layer 3 of the second optical grating construction carry out with a thickness of
The etching of 63nm~77nm, to be formed with a thickness of the Poly-Si grating A of 198nm~242nm and with a thickness of 63nm~77nm's
Si grating B.
Illustratively, above-mentioned hard mask layer 5 can be SiN layer or SiO2Layer, wherein PECVD (Plasma can be used
Enhanced Chemical Vapor Deposition, the vapour deposition process of plasma enhanced chemical) or LPCVD (Low
Pressure Chemical Vapor Deposition, low-pressure chemical vapour deposition technique) conduct of technique growth layer of sin is firmly
Mask layer 5, alternatively, using PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhancing
The vapour deposition process of chemistry) or one layer of SiO of LPCVD technique growth2As hard mask layer 5, wherein pecvd process has basic
The features such as temperature is low, deposition rate is fast, quality of forming film is good, pin hole is less and is not easily cracked, and 4 table of Poly-Si layer is not lost
The Si in face can obtain the preferable hard mask layer 5 of quality using such technique, so as to improve the blocking effect of hard mask layer 5
Fruit reduces the loss of Poly-Si layer 4.
It should be noted that in practical applications, the thickness of hard mask layer 5 is determined by the etching selection ratio of Poly-Si layer 4
It is fixed, due to 4 couples of SiO of Poly-Si layer2Etching selection ratio be higher than to the etching selection ratio of SiN, SiN layer or SiO2Layer is used as and covers firmly
When film layer 5, SiO2The thickness of layer can be less than SiN layer, therefore, compared to SiN layer, SiO2Layer can be removed more easily, be reduced
Loss to Poly-Si layer 4.
In order to guarantee that hard mask layer 5 can effectively stop to etch, the thickness of above-mentioned hard mask layer 5 be can control in 3nm
~20nm, for example, 10nm~20nm.The moderate hard mask layer 5 of thickness, can not only effectively stop to etch, prevent hard mask layer 5
The Poly-Si layer 4 of lower section is lost, and guarantees the precision of Poly-Si grating A pattern, additionally it is possible in the base that guarantee effectively stops
On plinth, the appropriate thickness for reducing hard mask layer 5, so that can more easily remove mask layer in the next steps.
Due to the thinner thickness of above-mentioned hard mask layer 5, after forming Poly-Si grating A and Si grating B, it is made
Remaining hard mask layer 5 can be removed by cleaning before coupling grating.
Illustratively, when hard mask layer 5 is SiN layer, H can be used3PO4Cleaning removes remaining hard mask layer 5, this is
Because of H3PO4Corrosion rate to Poly-Si layer 4, H are significantly greater than to the corrosion rate of SiN3PO4Corruption to Poly-Si layer 4
Erosion is very slow, so as to guarantee on the basis of removing SiN layer, reduces the corrosion to Poly-Si layer 4, improves Poly-Si grating
The precision of A pattern.
Hard mask layer 5 is SiO2When layer, remaining hard mask layer 5 can be removed using HF cleaning, similarly, this be because
For H3PO4To SiO2Corrosion rate be significantly greater than to the corrosion rate of Poly-Si layer 4, H3PO4Corrosion to Poly-Si layer 4
It is extremely slow.
It may include Si substrate 1, the 2 (Barrier of buried oxide layer of stacking specifically for the structure of SOI substrate
Oxide, BOX) and with a thickness of 198nm~242nm top silicon layer 3, correspondingly, above-mentioned SOI substrate can be with the following method
It is made:
One Si substrate 1 is provided；
Buried oxide layer 2 and top silicon layer 3 are formed on the surface of Si substrate 1.
It is understood that top silicon layer 3 is sequentially formed with Poly-Si layer 4 and hard mask layer 5 far from 1 side of Si substrate.
The preferable specific embodiment of the above, only the application, but the protection scope of the application is not limited thereto,
Within the technical scope of the present application, any changes or substitutions that can be easily thought of by anyone skilled in the art,
Should all it cover within the scope of protection of this application.
Claims (10)
1. a kind of preparation method of coupling grating, which comprises the steps of:
A SOI substrate is provided, the SOI substrate is divided into the grating region Poly-Si and the grating region Si in the horizontal direction, in SOI substrate
Surface sequentially form Poly-Si layers and hard mask layer；
Lithography and etching is carried out to the Poly-Si layer of hard mask layer and SOI substrate, top silicon surface is etched to, in Poly-Si light
Grid region forms the first optical grating construction；
Top silicon layer corresponding to the first optical grating construction and the top silicon layer of the grating region Si perform etching, and form Poly-Si grating and Si
Coupling grating is made in grating.
2. the preparation method of coupling grating according to claim 1, which is characterized in that described to hard mask layer and Poly-
Si layers of progress lithography and etching, are etched to top silicon surface, and forming the first optical grating construction in the grating region Poly-Si includes following step
It is rapid:
The first photoresist layer is formed far from SOI substrate side in hard mask layer；
To the first photoresist layer, hard mask layer and Poly-Si layers of progress lithography and etching, it is etched to top silicon surface, removal the
One photoresist layer forms the first optical grating construction in the grating region Poly-Si.
3. the preparation method of coupling grating according to claim 1, which is characterized in that described corresponding to the first optical grating construction
Top silicon layer and the top silicon layer of the grating region Si perform etching, form Poly-Si grating and Si grating include the following steps:
The second photoresist layer is formed in the first optical grating construction and top silicon layer；
Photoetching and development are carried out to corresponding second photoresist layer of the first optical grating construction and the grating region Si, so that the first optical grating construction
Region is opened, by the second optical grating construction pattern transfer to the second photoresist layer in the grating region Si；
Using hard mask layer and the second photoresist layer as etching barrier layer top silicon layer and second corresponding to the first optical grating construction
The corresponding top silicon layer of optical grating construction performs etching, and removes remaining second photoresist layer, forms Poly-Si grating and Si grating.
4. the preparation method of coupling grating according to any one of claims 1 to 3, which is characterized in that the Poly-Si light
Grid with a thickness of 198nm~242nm；The Si grating with a thickness of 63nm~77nm.
5. according to claim 1 to the preparation method of coupling grating described in 3, which is characterized in that the hard mask layer is SiN layer
Or SiO2Layer.
6. the preparation method of coupling grating according to claim 5, which is characterized in that the SiN layer uses pecvd process
Or LPCVD technique is made；
The SiO2Layer is made of PECVD or LPCVD technique.
7. the preparation method of coupling grating according to claim 5, which is characterized in that the hard mask layer with a thickness of
3nm~20nm.
8. the preparation method of coupling grating according to claim 5, which is characterized in that the formation Poly-Si grating and
Further include following steps before coupling grating is made after Si grating: cleaning removes remaining hard mask layer.
9. the preparation method of coupling grating according to claim 8, which is characterized in that the hard mask layer is SiN layer, is adopted
Use H3PO4Cleaning removes remaining hard mask layer；
The hard mask layer is SiO2Layer removes remaining hard mask layer using HF cleaning.
10. the preparation method of coupling grating according to any one of claims 1 to 3, which is characterized in that the SOI substrate
Si substrate, buried oxide layer and top silicon layer, the preparation method of the SOI substrate including stacking include the following steps:
One Si substrate is provided；
Buried oxide layer and top silicon layer are formed on the surface of Si substrate.
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Cited By (4)
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| CN112327412A (en) * | 2020-10-27 | 2021-02-05 | 中国科学院微电子研究所 | Manufacturing method of double-layer silicon-based photonic device and double-layer silicon-based photonic device |
| CN112462452A (en) * | 2020-10-27 | 2021-03-09 | 中国科学院微电子研究所 | Method for manufacturing photonic crystal and photonic crystal |
| CN114488394A (en) * | 2022-01-25 | 2022-05-13 | 中国科学院微电子研究所 | Silicon nitride grating coupler, preparation method thereof and optical device |
| WO2023136892A1 (en) * | 2022-01-13 | 2023-07-20 | Google Llc | Waveguide including an optical grating with reduced contamination and methods of production thereof |
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| CN110161606B (en) | 2021-04-27 |
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