CN110148639B - Preparation method of Mo back electrode for CIGS thin-film solar cell - Google Patents
Preparation method of Mo back electrode for CIGS thin-film solar cell Download PDFInfo
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- CN110148639B CN110148639B CN201910405921.9A CN201910405921A CN110148639B CN 110148639 B CN110148639 B CN 110148639B CN 201910405921 A CN201910405921 A CN 201910405921A CN 110148639 B CN110148639 B CN 110148639B
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- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000011521 glass Substances 0.000 claims abstract description 49
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 239000000843 powder Substances 0.000 claims abstract description 30
- 239000002245 particle Substances 0.000 claims abstract description 22
- 239000002002 slurry Substances 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000004111 Potassium silicate Substances 0.000 claims abstract description 17
- 229910052913 potassium silicate Inorganic materials 0.000 claims abstract description 17
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 claims abstract description 17
- 235000019353 potassium silicate Nutrition 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 12
- 238000000576 coating method Methods 0.000 claims abstract description 12
- 239000002270 dispersing agent Substances 0.000 claims abstract description 12
- 239000004115 Sodium Silicate Substances 0.000 claims abstract description 10
- 229910021485 fumed silica Inorganic materials 0.000 claims abstract description 10
- 229910052911 sodium silicate Inorganic materials 0.000 claims abstract description 10
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 239000002904 solvent Substances 0.000 claims abstract description 7
- 238000000498 ball milling Methods 0.000 claims description 30
- 238000003756 stirring Methods 0.000 claims description 24
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 11
- 239000006185 dispersion Substances 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 10
- 238000007873 sieving Methods 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 9
- 238000005303 weighing Methods 0.000 claims description 8
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000012153 distilled water Substances 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 230000001502 supplementing effect Effects 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 abstract description 22
- 230000008021 deposition Effects 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 3
- 239000007822 coupling agent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention relates to the technical field of CIGS (copper indium gallium selenide) thin-film solar cell preparation, and discloses a preparation method of a Mo back electrode for a CIGS thin-film solar cell, which comprises the steps of adding metal Mo powder with the average particle size of less than or equal to 150 mu m and uniformly dispersed glass powder bonding phase into an inorganic carrier solvent high-modulus potassium silicate solution, enabling the metal Mo powder to be in a uniformly dispersed state in slurry under the combined action of inorganic dispersant sodium silicate and inorganic anti-settling agent fumed silica, namely preparing metal Mo slurry, continuously coating the metal Mo slurry on a glass substrate in the same working chamber under the condition of not changing deposition pressure, and then carrying out curing treatment to prepare the Mo back electrode for the CIGS thin-film solar cell. The invention solves the technical problem that the Mo back electrode for the CIGS thin-film solar cell can not be continuously deposited in the same working chamber under the condition of not changing the deposition air pressure so as to meet the requirements of strong bonding force and low resistivity of the glass substrate and the Mo thin film.
Description
Technical Field
The invention relates to the technical field of CIGS (copper indium gallium selenide) thin-film solar cells, in particular to a preparation method of a Mo back electrode for a CIGS thin-film solar cell.
Background
The metal Mo thin film material has been widely applied In the fields of soft X-ray reflecting elements, large-area integrated circuits, solar cell electrodes and the like, In particular as Cu (In, Ga) Se2Back electrode material for (CIGS) thin film solar cells. The main reason is that Mo has the following characteristics: (1) high thermal stability (melting point up to 2623 ℃) and chemical stability; (2) resistivity of 5.2X 10-6Omega cm, the requirement of the current leading-out electrode of the solar cell can be met; (3) can form good ohmic contact with a CIGS absorbing layer (the work function of the CIGS absorbing layer is about 4.95eV), and reduce the interface recombination of carriers; (4) coefficient of thermal expansion (4.5X 10)-6Perk) and CIGS thermal expansion coefficient (8.0X 10-6and/K) are relatively close.
For a metal Mo electrode for a CIGS thin-film solar cell, it is generally required to have good bonding with a glass substrate and low resistivity, and a currently mature Mo thin-film deposition technology that meets the above performance requirements is a "two-step gas pressure deposition method", specifically: first, a 0.1um thick Mo layer with good bonding force to glass is sputter deposited under a pressure of 1.33Pa and has a resistivity of about 6.0X 10-6Omega cm; then, a Mo layer with low resistivity of 0.9um thickness is deposited under the air pressure of 0.133Pa, and the resistivity can reach 1.0 multiplied by 10-5Omega cm. However, the above-mentioned method for preparing Mo thin film cannot realize continuous deposition of Mo thin film in the same working chamber without changing deposition pressure.
The invention provides a preparation method of a Mo back electrode for a CIGS (copper indium gallium selenide) thin-film solar cell, and aims to solve the technical problem that the Mo film cannot be continuously deposited in the same working chamber under the condition of not changing deposition air pressure so as to meet the requirements of strong bonding force and low resistivity of a glass substrate and the Mo film in the conventional preparation method of the Mo back electrode for the CIGS thin-film solar cell.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a preparation method of a Mo back electrode for a CIGS thin-film solar cell, which solves the technical problem that the Mo film cannot be continuously deposited in the same working chamber under the condition of not changing the deposition air pressure by the conventional preparation method of the Mo back electrode for the CIGS thin-film solar cell so as to meet the requirements of strong bonding force and low resistivity of a glass substrate and the Mo film.
(II) technical scheme
In order to achieve the purpose, the invention provides the following technical scheme:
a preparation method of a Mo back electrode for a CIGS thin-film solar cell comprises the following steps:
(1) weighing 80-100 parts of metal Mo particles and 50 parts of absolute ethyl alcohol, placing the metal Mo particles and the absolute ethyl alcohol together in a ball milling tank for ball milling, drying and evaporating to remove the absolute ethyl alcohol, and sieving with a 100-mesh sieve to obtain metal Mo powder with the average particle size of less than or equal to 150 um;
(2) weighing 10-15 parts of glass powder, and ultrasonically dispersing in an absolute ethyl alcohol solvent to prepare a glass dispersion liquid; wherein the glass powder is made of PbO and SiO2、TiO2、B2O3MgO;
(3) adding 15-25 parts of high-modulus potassium silicate solution into a high-speed mixer, firstly adding 3-8 g of dispersing agent and 5-10 g of anti-settling agent under the stirring state of the rotation speed of 300-500 rpm, then slowly adding the metal Mo powder prepared in the step (1), and stirring for 2-3 hours at 600-800 rpm;
adding the glass dispersion liquid prepared in the step (2) into a high-speed mixer at a speed of 1mL/s under a stirring state with a rotating speed of 300-500 rpm, and then stirring for 1-3 h at 600-800 rpm;
(4) placing the composite slurry prepared in the step (3) in a ball milling tank, and adding N2Ball-milling for 4-6 h under protection, and sieving with a 100-mesh sieve to obtain metal Mo slurry;
(5) firstly, uniformly coating the metal Mo slurry on a glass substrate by adopting a blade coating method, and then placing the glass substrate in an air-blast drying oven with the relative humidity of 50-85% for curing treatment, wherein the method specifically comprises the following steps: and (3) preserving heat for 0.5-1 h at the temperature of 40-60 ℃, preserving heat for 1-3 h at the temperature of 80-100 ℃, and preserving heat for 1-3 h at the temperature of 110-140 ℃ to prepare the Mo back electrode.
Preferably, in the step (1), the metal Mo particles are in N2Ball milling is carried out for 1-3 h under protection, then 8-15 parts of silane coupling agent are added, and ball milling is continued for 2-4 h.
Preferably, in the step (2), the glass powder is prepared from 20% wtPbO and 20% wtSiO with average grain diameter less than or equal to 2.6um2、25％wtTiO2、15％wtB2O320% wtMgO.
Preferably, in the step (3), the dispersant is sodium silicate and the anti-settling agent is fumed silica.
(III) advantageous technical effects
Compared with the prior art, the invention has the following beneficial technical effects:
adding metal Mo powder with the average particle size of less than or equal to 150 mu m and uniformly dispersed glass powder binder phase into an inorganic carrier solvent high-modulus potassium silicate solution, under the combined action of inorganic dispersant sodium silicate and inorganic anti-settling agent fumed silica, uniformly dispersing the metal Mo powder in slurry to prepare metal Mo slurry, continuously coating the metal Mo slurry on a glass substrate in the same working chamber under the condition of not changing deposition air pressure, and then, carrying out curing treatment to prepare the Mo back electrode for the CIGS thin-film solar cell;
the resistivity of the Mo back electrode prepared by the invention is 2.5 multiplied by 10-5～3.2×10-5Omega cm, the adhesion between the Mo back electrode prepared by the method and glass is 121-133N/cm;
therefore, the technical problem that the Mo film can not be continuously deposited in the same working chamber under the condition of not changing the deposition air pressure so as to meet the requirements of strong bonding force and low resistivity of the glass substrate and the Mo film in the conventional preparation method of the Mo back electrode for the CIGS film solar cell is solved.
Detailed Description
The raw materials for preparing the high-modulus potassium silicate solution comprise: potassium silicate solution, Qingdao soda plant; silica sol, a chemical company, united nations of Jiangyin; methyltrimethoxysilane, chemical pure, Shanghai chemical reagent procurement supply station; wherein, the basic properties of the potassium silicate solution are shown in Table 1, and the basic properties of the silica sol are shown in Table 2;
TABLE 1 basic Properties of Potassium silicate solutions
| Specification of | Potassium oxide% | Silica% | Modulus (M) | Viscosity (20 ℃) Pa.s |
| QPY405-1 | ≥11.5 | ≥25 | 3.15～3.3 | ≤0.6 |
TABLE 2 basic Properties of the silica sols
| Specification of | Silica% | PH | Viscosity (20 ℃) Pa.s | Transparency of silica sol |
| CH83-125 | 25±1 | 9～11 | 3～6×10-3 | 10 |
The preparation method of the high-modulus potassium silicate solution comprises the following steps: pouring 100g of potassium silicate solution into a reactor provided with a high-speed stirrer and a heating device, slowly adding 15g of silica sol under stirring, heating the system to 50 ℃ after the silica sol is dropwise added, dropwise adding 6g of methyltrimethoxysilane into the reactor, supplementing distilled water in the process to ensure that the pH value of the system is 10, and stirring for 2.0 hours at 3500r/min after the silane is dropwise added to obtain the high-modulus potassium silicate solution.
The first embodiment is as follows:
(1) 80g of metal Mo particles and 50g of absolute ethyl alcohol are weighed and placed in a ball milling tank together, and the mixture is placed in a ball milling tank under the condition of N2Carrying out ball milling for 1h under protection, then adding 8g of gamma-aminopropyl triethoxysilane coupling agent, continuing ball milling for 2h, drying and evaporating to remove absolute ethyl alcohol, and sieving with a 100-mesh sieve to obtain metal Mo powder with average particle size of less than or equal to 150 um;
(2) weighing 10g of glass powder with the average particle size of less than or equal to 2.6um, and ultrasonically dispersing the glass powder in 100mL of absolute ethanol solvent added with 1g of sodium silicate dispersant and 2g of fumed silica anti-settling agent to prepare glass dispersion liquid; wherein the glass powder consists of 20 percent of wtPbO and 20 percent of wtSiO2、25％wtTiO2、15％wtB2O320% wtMgO;
(3) adding 15g of high-modulus potassium silicate solution into a high-speed mixer, firstly adding 3g of sodium silicate dispersant and 5g of fumed silica anti-settling agent under the stirring state with the rotating speed of 300rpm, then slowly adding the metal Mo powder prepared in the step (1), and stirring for 2 hours at 600 rpm;
adding the glass dispersion liquid prepared in the step (2) into a high-speed mixer at the speed of 1mL/s in a stirring state with the rotating speed of 300rpm, and then stirring for 1h at 600 rpm;
(4) placing the composite slurry prepared in the step (3) in a ball milling tank, and adding N2Ball-milling for 4 hours under protection, and sieving by a 100-mesh sieve to prepare metal Mo slurry;
(5) firstly, uniformly coating the metal Mo slurry on a glass substrate by adopting a blade coating method, and then placing the glass substrate in an air-blast drying oven with the relative humidity of 50% for curing treatment, wherein the method specifically comprises the following steps: keeping the temperature at 40 ℃ for 0.5h, keeping the temperature at 80 ℃ for 1h, and keeping the temperature at 110 ℃ for 1h to prepare a Mo back electrode;
(6) the resistivity of the Mo back electrode is 2.5X 10-5Omega cm, the adhesion between the Mo back electrode and the glass is 133N/cm.
Example two:
(1) 100g of metal Mo particles and 50g of absolute ethyl alcohol are weighed and placed in a ball milling tank together, and the mixture is placed in a ball milling tank under the condition of N2Carrying out ball milling for 3h under protection, then adding 15g of gamma-aminopropyl triethoxysilane coupling agent, continuing ball milling for 4h, drying and evaporating to remove absolute ethyl alcohol, and sieving with a 100-mesh sieve to obtain metal Mo powder with average particle size of less than or equal to 150 um;
(2) weighing 15g of glass powder with the average particle size of less than or equal to 2.6um, and ultrasonically dispersing the glass powder in 100mL of absolute ethanol solvent added with 3g of sodium silicate dispersant and 3g of fumed silica anti-settling agent to prepare glass dispersion liquid; wherein the glass powder consists of 20 percent of wtPbO and 20 percent of wtSiO2、25％wtTiO2、15％wtB2O320% wtMgO;
(3) adding 25g of high-modulus potassium silicate solution into a high-speed mixer, firstly adding 8g of sodium silicate dispersant and 10g of fumed silica anti-settling agent under the stirring state with the rotating speed of 500rpm, then slowly adding the metal Mo powder prepared in the step (1), and stirring for 3 hours at 800 rpm;
adding the glass dispersion prepared in the step (2) into a high-speed mixer at a speed of 1mL/s in a stirring state at a rotating speed of 500rpm, and then stirring for 3 hours at 800 rpm;
(4) placing the composite slurry prepared in the step (3) in a ball milling tank, and adding N2Ball-milling for 6 hours under protection, and sieving by a 100-mesh sieve to prepare metal Mo slurry;
(5) firstly, uniformly coating the metal Mo slurry on a glass substrate by adopting a blade coating method, and then placing the glass substrate in an air-blast drying oven with the relative humidity of 85% for curing treatment, wherein the method specifically comprises the following steps: keeping the temperature at 60 ℃ for 1h, keeping the temperature at 100 ℃ for 3h, and keeping the temperature at 140 ℃ for 3h to prepare a Mo back electrode;
(6) the resistivity of the Mo back electrode is 3.2X 10-5Omega cm, the adhesion between the Mo back electrode and the glass is 121N/cm.
Example three:
(1) weighing 90g of metal Mo particles and 50g of absolute ethyl alcohol, placing the metal Mo particles and the absolute ethyl alcohol in a ball milling tank, and adding the metal Mo particles and the absolute ethyl alcohol into the ball milling tank2Carrying out ball milling for 2h under protection, then adding 12g of gamma-aminopropyl triethoxysilane coupling agent, continuing ball milling for 3h, drying and evaporating to remove absolute ethyl alcohol, and sieving with a 100-mesh sieve to obtain metal Mo powder with average particle size of less than or equal to 150 um;
(2) weighing 12g of glass powder with the average particle size of less than or equal to 2.6um, and ultrasonically dispersing the glass powder in 100mL of absolute ethanol solvent added with 2g of sodium silicate dispersant and 2.5g of fumed silica anti-settling agent to prepare glass dispersion liquid; wherein the glass powder consists of 20 percent of wtPbO and 20 percent of wtSiO2、25％wtTiO2、15％wtB2O320% wtMgO;
(3) adding 20g of high-modulus potassium silicate solution into a high-speed mixer, firstly adding 5g of sodium silicate dispersant and 8g of fumed silica anti-settling agent under the stirring state with the rotation speed of 400rpm, then slowly adding the metal Mo powder prepared in the step (1), and stirring for 2.5 hours at 700 rpm;
adding the glass dispersion liquid prepared in the step (2) into a high-speed mixer at the speed of 1mL/s in a stirring state with the rotating speed of 400rpm, and then, stirring for 2 hours at 700 rpm;
(4) placing the composite slurry prepared in the step (3) in a ball milling tank, and adding N2Ball-milling for 5 hours under protection, and sieving by a 100-mesh sieve to prepare metal Mo slurry;
(5) firstly, uniformly coating the metal Mo slurry on a glass substrate by adopting a blade coating method, and then placing the glass substrate in an air-blast drying oven with the relative humidity of 70% for curing treatment, wherein the method specifically comprises the following steps: keeping the temperature at 50 ℃ for 1h, keeping the temperature at 90 ℃ for 2h, and keeping the temperature at 130 ℃ for 2h to prepare a Mo back electrode;
(6) the resistivity of the Mo back electrode is 2.7 multiplied by 10-5Omega cm, the adhesion between the Mo back electrode and the glass is 125N/cm.
Claims (4)
1. A preparation method of a Mo back electrode for a CIGS thin-film solar cell is characterized by comprising the following steps:
(1) weighing 80-100 parts of metal Mo particles and 50 parts of absolute ethyl alcohol, placing the metal Mo particles and the absolute ethyl alcohol together in a ball milling tank for ball milling, drying and evaporating to remove the absolute ethyl alcohol, and sieving with a 100-mesh sieve to obtain metal Mo powder with the average particle size of less than or equal to 150 um;
(2) weighing 10-15 parts of glass powder, and ultrasonically dispersing in an absolute ethyl alcohol solvent to prepare a glass dispersion liquid; wherein the glass powder is made of PbO and SiO2、TiO2、B2O3MgO;
(3) adding 15-25 parts of high-modulus potassium silicate solution into a high-speed mixer, firstly adding 3-8 g of dispersing agent and 5-10 g of anti-settling agent under the stirring state of the rotation speed of 300-500 rpm, then slowly adding the metal Mo powder prepared in the step (1), and stirring for 2-3 hours at 600-800 rpm;
adding the glass dispersion liquid prepared in the step (2) into a high-speed mixer at a speed of 1mL/s under a stirring state with a rotating speed of 300-500 rpm, and then stirring for 1-3 h at 600-800 rpm;
the preparation method of the high-modulus potassium silicate solution comprises the following steps: pouring 100g of potassium silicate solution into a reactor provided with a high-speed stirrer and a heating device, slowly adding 15g of silica sol under stirring, heating the system to 50 ℃ after the silica sol is dropwise added, dropwise adding 6g of methyltrimethoxysilane into the reactor, supplementing distilled water in the process to ensure that the pH value of the system is 10, and stirring for 2.0 hours at 3500r/min after the silane is dropwise added to obtain the high-modulus potassium silicate solution;
(4) placing the composite slurry prepared in the step (3) in a ball milling tank, and adding N2Ball-milling for 4-6 h under protection, and sieving with a 100-mesh sieve to obtain metal Mo slurry;
(5) firstly, uniformly coating the metal Mo slurry on a glass substrate by adopting a blade coating method, and then placing the glass substrate in an air-blast drying oven with the relative humidity of 50-85% for curing treatment, wherein the method specifically comprises the following steps: and (3) preserving heat for 0.5-1 h at the temperature of 40-60 ℃, preserving heat for 1-3 h at the temperature of 80-100 ℃, and preserving heat for 1-3 h at the temperature of 110-140 ℃ to prepare the Mo back electrode.
2. The method according to claim 1, wherein in the step (1), the metal Mo particles are in N2Ball milling is carried out for 1-3 h under protection, then 8-15 parts of silane coupling agent are added, and ball milling is continued for 2-4 h.
3. The method according to claim 1, wherein in the step (2), the glass frit is prepared from 20% wtPbO and 20% wtSiO with an average particle size of 2.6um or less2、25％wtTiO2、15％wtB2O320% wtMgO.
4. The preparation method according to claim 1, wherein in the step (3), the dispersing agent is sodium silicate and the anti-settling agent is fumed silica.
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| CN103474128A (en) * | 2013-09-13 | 2013-12-25 | 厦门大学 | Method for manufacturing copper indium gallium diselenide thin-film solar cells |
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