CN110148569A - A kind of defects scanning method and equipment of bonding structure - Google Patents
A kind of defects scanning method and equipment of bonding structure Download PDFInfo
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- CN110148569A CN110148569A CN201910409848.2A CN201910409848A CN110148569A CN 110148569 A CN110148569 A CN 110148569A CN 201910409848 A CN201910409848 A CN 201910409848A CN 110148569 A CN110148569 A CN 110148569A
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- air blister
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- blister defect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The defects scanning method and equipment of a kind of bonding structure provided by the embodiments of the present application, bonding structure may include at least three wafers, this at least three wafer is vertically bonded together to form multiple bonded interfaces, planar ultrasonic wave scanning is carried out by para-linkage structure, the plane distribution information of the air blister defect of available all bonded interfaces, by carrying out profile scanning to air blister defect, the Soil profile information of available air blister defect, by Soil profile information, the bonded interface where air blister defect can be determined.In this way, can accurately obtain the plan-position and upright position where air blister defect by flat scanning and profile scanning, to realize the layering monitoring of each bonded interface, the air blister defect at each bonded interface is found in time.
Description
Technical field
The present invention relates to semiconductor devices and its manufacturing field, in particular to the defects scanning method of a kind of bonding structure and
Equipment.
Background technique
With the continuous development of semiconductor technology, wafer bond techniques are widely used, and are by being bonded skill
Two wafer of art is bonded together, and realizes the vertical interconnection of two wafers.
During wafer bonding, it is undesirable to occur air blister defect (Bubble defect) at bonded interface, if going out
The now air blister defect will lead to the risk that fragmentation occurs in follow-up process in wafer, in addition, still causing the source of other defect
Head influences the manufacturing yield of wafer.Currently, mainly passing through ultrasound scanning unit (Scanning Acoustic
Microscopy, SAM) this kind of air blister defect is detected, however, current scanning device only has to the scanning of one layer of bonded interface
Ability can have multiple bonded interfaces after wafer bonding more than two panels, and current scanning device can not scan respectively
Air blister defect at each bonded interface cannot achieve the layering monitoring of bonding technology.
Summary of the invention
In view of this, a kind of defects scanning method and equipment for being designed to provide bonding structure of the application, for pair
Multilayer bonded interface carries out layering monitoring, to find the air blister defect at each bonded interface in time.
To achieve the above object, the application has following technical solution:
A kind of defects scanning method of bonding structure provided by the embodiments of the present application, the bonding structure include at least three
Wafer, at least three wafer are vertically bonded, and the scan method includes:
The planar ultrasonic wave scanning of bonding structure is carried out, to obtain the plane distribution letter of the air blister defect of all bonded interfaces
Breath；
Profile scanning is carried out to the air blister defect, to obtain the Soil profile information of air blister defect；
By the Soil profile information, the bonded interface where the air blister defect is determined.
Optionally, described by the Soil profile information, determine the bonded interface where the air blister defect, comprising:
By the relative position of air blister defect and any wafer in the Soil profile information, the air blister defect institute is determined
Bonded interface.
Optionally, further includes:
According to the bonded interface where the plane distribution information and the air blister defect, each bonded interface is provided
The plane distribution information of air blister defect.
Optionally, the plane distribution information is defect map.
Optionally, the Soil profile information is profile image.
A kind of Defect Scanning equipment provided by the embodiments of the present application, comprising:
Flat scanning unit, the planar ultrasonic wave for carrying out bonding structure scans, to obtain the gas of all bonded interfaces
Steep the plane distribution information of defect；
Profile scanning unit, for carrying out profile scanning to the air blister defect, to obtain the Soil profile of air blister defect
Information；
Bonded interface determination unit, for determining the bonding where the air blister defect by the Soil profile information
Interface.
Optionally, described by the Soil profile information in the bonded interface determination unit, determine that the bubble lacks
Bonded interface where falling into, comprising:
By the relative position of air blister defect and any wafer in the Soil profile information, the air blister defect institute is determined
Bonded interface.
Optionally, further includes:
Each boundary defect provides unit, for according to the key where the plane distribution information and the air blister defect
Interface is closed, the plane distribution information of the air blister defect of each bonded interface is provided.
Optionally, the planar ultrasonic wave scanning is carried out using ultrasonic scanning microscope.
Optionally, the profile scanning is carried out using ultrasonic scanning microscope.
The defects scanning method and equipment of a kind of bonding structure provided by the embodiments of the present application, bonding structure may include to
Few three wafers, this at least three wafer are vertically bonded together to form multiple bonded interfaces, and it is super to carry out plane by para-linkage structure
Ultra sonic scanner, the plane distribution information of the air blister defect of available all bonded interfaces, by carrying out section to air blister defect
Scanning, the Soil profile information of available air blister defect can determine the key where air blister defect by Soil profile information
Close interface.In this way, by flat scanning and profile scanning, plan-position where air blister defect and vertical can be accurately obtained
Position finds the air blister defect at each bonded interface to realize the layering monitoring of each bonded interface in time.
Detailed description of the invention
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the application
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 shows a kind of flow chart of the defects scanning method of bonding structure provided by the embodiments of the present application；
Fig. 2 shows a kind of signals that ultrasound scanning device para-linkage structure is scanned provided by the embodiments of the present application
Figure；
Fig. 3 shows the schematic diagram of one of the embodiment of the present application defect attached drawing；
The profile image schematic diagram of section where Fig. 4 shows the air blister defect in the embodiment of the present application；
Fig. 5 shows the defect map schematic diagram of each bonded interface locating for the air blister defect in the embodiment of the present application
Fig. 6 shows a kind of structural block diagram of Defect Scanning equipment provided by the embodiments of the present application.
Specific embodiment
In order to make the above objects, features, and advantages of the present application more apparent, with reference to the accompanying drawing to the application
Specific embodiment be described in detail.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
It is different from other way described herein using other and implements, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
Secondly, combination schematic diagram of the present invention is described in detail, when describing the embodiments of the present invention, for purposes of illustration only, table
Show that the sectional view of device architecture can disobey general proportion and make partial enlargement, and the schematic diagram is example, is not answered herein
Limit the scope of protection of the invention.In addition, the three-dimensional space of length, width and depth should be included in actual fabrication.
As the description in background technique, multiple wafers can be bonded together by bonding techniques, realize wafer
Vertical interconnection, the interface of wafer bonding is as bonded interface, however during wafer bonding, bonded interface it is possible that
Air blister defect causes wafer to occur the risk of fragmentation in follow-up process, or leads to the other defect of wafer, influences wafer
Manufacturing yield.Therefore, it is necessary to the bonded interfaces to wafer to detect, and adjust bonding technology according to testing result, to reduce
There is the wafer of air blister defect, improves the manufacturing yield of wafer.
Currently, the air blister defect at bonded interface can be detected by ultrasound scanning device.Specifically, ultrasound scanning device
In ultrasonic transmitter can to the wafer of bonding issue ultrasonic wave, when there is no air blister defect at bonded interface, due to interface
The impedance of the wafer of two sides is identical, therefore back wave of the ultrasonic wave at bonded interface is smaller；And occurs gas at bonded interface
When steeping defect, the impedance of bubble and the impedance of wafer are different, and ultrasonic wave reflects at bonded interface, therefore stronger reflection
Wave is received by the ultrasonic receiver in ultrasound scanning device, according to the intensity for the back wave that ultrasonic receiver receives, Ke Yishi
Now to the detection of air blister defect.
However, current scanning device no doubt have to one layer of bonded interface scanning ability, but for two panels more than
After wafer bonding, there can be multiple bonded interfaces, when the back wave received according to receiver, not can determine that each bonded interface
The air blister defect at place, therefore cannot achieve the layering monitoring of bonding technology.
In order to solve the above-mentioned technical problem, it a kind of defects scanning method of bonding structure provided by the embodiments of the present application and sets
Standby, bonding structure may include at least three wafers, this at least three wafer is vertically bonded together to form multiple bonded interfaces, pass through
Para-linkage structure carries out planar ultrasonic wave scanning, and the plane distribution information of the air blister defect of available all bonded interfaces is led to
It crosses and profile scanning is carried out to air blister defect, the Soil profile information of available air blister defect can be with by Soil profile information
Determine the bonded interface where air blister defect.That is, the application can be obtained accurately by flat scanning and profile scanning
Plan-position and upright position where air blister defect realize that the layering to each bonded interface monitors, find each key in time
The air blister defect of interface is closed, the risk for the fragmentation that wafer occurs in follow-up process by air blister defect is reduced, improves non-defective unit
Rate.
In order to better understand the technical solution and technical effect of the application, below with reference to attached drawing to specific embodiment
It is described in detail.
It is a kind of flow chart of the defects scanning method of bonding structure provided by the embodiments of the present application with reference to Fig. 1, wherein
Bonding structure includes at least three wafers, this at least three wafer is vertically bonded, and forms at least two bonded interfaces, this method
It may comprise steps of:
S101 carries out the planar ultrasonic wave scanning of bonding structure, to obtain the plane of the air blister defect of all bonded interfaces
Distributed intelligence.
In the embodiment of the present application, bonding structure refers to that at least three wafers are vertically bonded, in this way, can be formed to
Few two bonded interfaces can not carry out efficient and accurate inspection for the air blister defect on multiple bonded interfaces in the prior art
It surveys, the application is mainly for such bonding structure.
Wherein, each wafer has all completed the manufacturing process of device, is such as already formed with device architecture and electric connector
The interconnection layer of part structure, and be bonded together by bonding technology, it can be the intermolecular chemical force by bonded layer between wafer
Or the bonding techniques such as hybrid bonded (hybrid bonding) realize bonding, the interface of bonding is bonded interface.On each wafer
Device architecture may include that MOS FET device, memory device and/other passive devices, memory device can wrap
Nonvolatile memory or random access memory etc. are included, nonvolatile memory for example may include NOR type flash memory, NAND-type flash memory
Equal floating gate fets or ferroelectric memory, phase transition storage etc., device architecture can be planar device or solid
Type device, three-dimensional device for example can be FIN-FET (fin formula field effect transistor), three-dimensional storage etc..It can be on each wafer
Including different device architectures, different types of device or same type of device but the voltage with different operation can be.
Para-linkage structure carry out planar ultrasonic wave scanning, specifically, can by ultrasound scanning device para-linkage structure into
Row scanning, the scanning are traversed along the topsheet surface of bonding structure, and the ultrasonic transmitter in ultrasound scanning device can be to key
It closes structure and emits ultrasonic wave, the ultrasonic wave of sending sequentially passes through each bonded interface, and more or less anti-occurs in bonded interface
It penetrates, the ultrasonic wave of transmitting is received by the ultrasonic receiver in ultrasound scanning device.Wherein, ultrasound scanning device can be ultrasonic wave
Flying-spot microscope.
It is understood that the direction for the ultrasonic wave that ultrasonic transmitter is sent can be referred to perpendicular to each bonded interface
It is a kind of schematic diagram that ultrasound scanning device para-linkage structure is scanned provided by the embodiments of the present application, bonding junction shown in Fig. 2
It include three wafers in structure, wherein the first bonded interface 1001 is formed between the first wafer 101 and the second wafer 102, second is brilliant
The second bonded interface 1002 is formed between circle 102 and third wafer 103.
Specifically, during the scanning process, if there is no air blister defect at bonded interface, due to the wafer of bonded interface two sides
Impedance it is almost equal, only a small number of ultrasonic waves are reflected, and are had when air blister defect at bonded interface namely two wafers are deposited
In air, and the impedance of air and wafer is different, and ultrasonic wave can occur largely to emit in the interface of air blister defect, thus greatly
The back wave of amount is received by ultrasonic receiver.It is scanned, can be obtained by each position of planar ultrasonic wave para-linkage structure
To the intensity of the corresponding back wave in each position of bonded interface.
In the embodiment of the present application, according to planar ultrasonic wave scanning result, the bubble that can obtain all bonded interfaces is lacked
Sunken plane distribution information.Plane distribution information be can embody air blister defect bonding structure horizontal plane position planar
The information set, such as can be coordinate value of the air blister defect in the plane where bonded interface, it is also possible to air blister defect and exists
The defects of plane where bonding structure horizontal plane map (defect map).
Specifically, planar ultrasonic wave scanning result can be each position pair for the bonded interface that ultrasonic receiver receives
The intensity for the back wave answered, according to plane ultrasonic scanning result, the plane point of the air blister defect of available all bonded interfaces
Cloth information show a kind of schematic diagram of defect attached drawing provided by the embodiments of the present application with reference to Fig. 3, wherein exists on bonded interface
Air blister defect 1 and air blister defect 2.
According to the intensity for the back wave that ultrasonic receiver receives, it can determine and be lacked at bonded interface with the presence or absence of bubble
Sunken and air blister defect plane where bonded interface position, can't judge which layer key the air blister defect is located at this time
Interface is closed, needs subsequent operation further to identify.
S102 carries out profile scanning to air blister defect, to obtain the Soil profile information of air blister defect.
After obtaining air blister defect position of plane where bonded interface, targetedly air blister defect can be cutd open
Surface scan carries out profile scanning to air blister defect specifically, can use ultrasonic scanning microscope.Refering to what is shown in Fig. 3, along AA
Direction carries out profile scanning to air blister defect 1, and the Soil profile information of available air blister defect 1 lacks bubble along the direction BB
It falls into 2 and carries out profile scanning, the Soil profile information of available air blister defect 2.
Wherein, Soil profile information is can to embody the information of position of the air blister defect in the plane where section, example
The coordinate value in plane as where can be air blister defect in section, the sectional view of section where being also possible to air blister defect
Picture wherein includes air blister defect in profile image.Refering to what is shown in Fig. 4, for section where the air blister defect in the embodiment of the present application
Profile image schematic diagram, wherein Fig. 4 (a) show the profile image of 1 place section of air blister defect, and Fig. 4 (b) show gas
Steep the profile image of 2 place section of defect.
S103 determines the bonded interface where air blister defect by Soil profile information.
The position in plane as where Soil profile information can determine air blister defect in section, and wafer is in section
In position be it is determining, then the bonded interface where air blister defect can be determined according to Soil profile information.Specifically, can be with
The bonded interface where air blister defect is determined according to the relative position of air blister defect in Soil profile information and each wafer,
When the thickness of each wafer determines, the key where air blister defect can be determined according to the relative position of air blister defect and any wafer
Interface is closed, relative position may include range data, or further comprise bearing data.
Refering to what is shown in Fig. 4, know air blister defect 1 between the first wafer 101 and the second wafer 102, then air blister defect 1
At the first bonded interface 1001, and air blister defect 2 is between the second wafer 102 and third wafer 103, then air blister defect
2 are located at the second bonded interface 1002.
That is, the embodiment of the present application can according to bonded interface the position of air blister defect planar obtain
The horizontal position of air blister defect, according to section where air blister defect the position of air blister defect in the planes obtain air blister defect
Upright position, so that accurate determination whether there is in each bonded interface according to the horizontal position and upright position of air blister defect
Air blister defect, to realize the layered weighting to each bonded interface.
It in the embodiment of the present application, can also be according to the plane distribution information and gas of the air blister defect of all bonded interfaces
The bonded interface where defect is steeped, the plane distribution information of each bonded interface locating for air blister defect, plane here are provided
Distributed intelligence can reflect position of the air blister defect in locating bonded interface, such as can be air blister defect in locating key
The coordinate in interface is closed, the defect map of bonded interface locating for air blister defect is also possible to.
Refering to what is shown in Fig. 5, be the defect map of each bonded interface locating for the air blister defect in the embodiment of the present application
Schematic diagram, wherein Fig. 5 (a) show the defect map of the first bonded interface 1001 where air blister defect 1, shown in Fig. 5 (b)
For the defect map of the second bonded interface 1002 where air blister defect 2, each bubble can be learnt from Fig. 5 (a) and Fig. 5 (b)
The three-dimensional position of defect.
After being scanned to each bonded interface, can be according to the air blister defect of each bonded interface the case where, to key
It closes equipment and/or technique is adjusted, so that the generation of air blister defect is reduced, meanwhile, it can reduce in follow-up process due to gas
Steep the risk of fragmentation caused by defect.
A kind of defects scanning method of bonding structure provided by the embodiments of the present application, bonding structure may include at least three
Wafer, this at least three wafer are vertically bonded together to form multiple bonded interfaces, are carried out planar ultrasonic wave by para-linkage structure and are swept
It retouches, the plane distribution information of the air blister defect of available all bonded interfaces, it, can by carrying out profile scanning to air blister defect
To obtain the Soil profile information of air blister defect, by Soil profile information, the bonded interface where air blister defect can be determined
In this way, can accurately obtain the plan-position and upright position of air blister defect, realization pair by flat scanning and profile scanning
The layering of each bonded interface monitors, and finds the air blister defect at each bonded interface in time.
Based on the defects scanning method of the above bonding structure, the embodiment of the present application also provides a kind of Defect Scanning equipment,
Refering to what is shown in Fig. 6, being a kind of structural block diagram of Defect Scanning equipment provided by the embodiments of the present application, may include:
Flat scanning unit 100, the planar ultrasonic wave for carrying out bonding structure scans, to obtain all bonded interfaces
The plane distribution information of air blister defect；
Profile scanning unit 200, for carrying out profile scanning to the air blister defect, to obtain the section point of air blister defect
Cloth information；
Bonded interface determination unit 300, for determining the key where the air blister defect by the Soil profile information
Close interface.(label and Fig. 6's is inconsistent, adjusts, thanks)
Optionally, described by the Soil profile information in the bonded interface determination unit, determine that the bubble lacks
Bonded interface where falling into, comprising:
By the relative position of air blister defect and any wafer in the Soil profile information, the air blister defect institute is determined
Bonded interface.
Optionally, further includes:
Each boundary defect provides unit, for according to the key where the plane distribution information and the air blister defect
Interface is closed, the plane distribution information of the air blister defect of each bonded interface is provided.
Optionally, the planar ultrasonic wave scanning is carried out using ultrasonic scanning microscope.
Optionally, the profile scanning is carried out using ultrasonic scanning microscope.
A kind of Defect Scanning equipment provided by the embodiments of the present application carries out planar ultrasonic wave scanning by para-linkage structure,
The plane distribution information of the air blister defect of available all bonded interfaces can be with by carrying out profile scanning to air blister defect
The Soil profile information of air blister defect is obtained, in this way, can determine bonding circle where air blister defect by Soil profile information
Face.That is, the application can accurately be obtained the plan-position of air blister defect and be hung down by flat scanning and profile scanning
Straight position realizes that the layering to each bonded interface monitors, finds the air blister defect at each bonded interface in time.
All the embodiments in this specification are described in a progressive manner, same and similar portion between each embodiment
Dividing may refer to each other, and the highlights of each of the examples are differences from other embodiments.Especially for memory
For part embodiment, since it is substantially similar to the method embodiment, so describing fairly simple, related place is referring to method reality
Apply the part explanation of example.
The above is only the preferred embodiment of the application, although the application has been disclosed in the preferred embodiments as above, so
And it is not limited to the application.Anyone skilled in the art is not departing from technical scheme ambit
Under, many possible changes and modifications all are made to technical scheme using the methods and technical content of the disclosure above,
Or equivalent example modified to equivalent change.Therefore, all contents without departing from technical scheme, according to the application's
Technical spirit any simple modification, equivalent variation and modification made to the above embodiment, still fall within present techniques side
In the range of case protection.
Claims (10)
1. a kind of defects scanning method of bonding structure, which is characterized in that the bonding structure includes at least three wafers, described
At least three wafers are vertically bonded, and the scan method includes:
The planar ultrasonic wave scanning of bonding structure is carried out, to obtain the plane distribution information of the air blister defect of all bonded interfaces；
Profile scanning is carried out to the air blister defect, to obtain the Soil profile information of air blister defect；
By the Soil profile information, the bonded interface where the air blister defect is determined.
2. determining the gas the method according to claim 1, wherein described by the Soil profile information
Steep the bonded interface where defect, comprising:
By the relative position of air blister defect and any wafer in the Soil profile information, where determining the air blister defect
Bonded interface.
3. the method according to claim 1, wherein further include:
According to the bonded interface where the plane distribution information and the air blister defect, the bubble of each bonded interface is provided
The plane distribution information of defect.
4. according to the method described in claim 3, it is characterized in that, the plane distribution information is defect map.
5. the method according to claim 1, wherein the Soil profile information is profile image.
6. a kind of Defect Scanning equipment characterized by comprising
Flat scanning unit, the planar ultrasonic wave for carrying out bonding structure scan, and are lacked with obtaining the bubble of all bonded interfaces
Sunken plane distribution information；
Profile scanning unit, for carrying out profile scanning to the air blister defect, to obtain the Soil profile information of air blister defect；
Bonded interface determination unit, for determining the bonded interface where the air blister defect by the Soil profile information.
7. equipment according to claim 6, which is characterized in that described by described in the bonded interface determination unit
Soil profile information determines the bonded interface where the air blister defect, comprising:
By the relative position of air blister defect and any wafer in the Soil profile information, where determining the air blister defect
Bonded interface.
8. equipment according to claim 6, which is characterized in that further include:
Each boundary defect provides unit, for according to bonding circle where the plane distribution information and the air blister defect
Face provides the plane distribution information of the air blister defect of each bonded interface.
9. equipment a method according to any one of claims 6-8, which is characterized in that carry out institute using ultrasonic scanning microscope
State planar ultrasonic wave scanning.
10. equipment a method according to any one of claims 6-8, which is characterized in that carried out using ultrasonic scanning microscope
The profile scanning.
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Cited By (4)
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| CN110571163A (en) * | 2019-09-18 | 2019-12-13 | 武汉新芯集成电路制造有限公司 | Bubble defect treatment method for wafer bonding process |
| CN111081581A (en) * | 2019-11-12 | 2020-04-28 | 长江存储科技有限责任公司 | Bubble defect monitoring method and device, server and readable storage medium |
| CN111599709A (en) * | 2020-05-29 | 2020-08-28 | 上海华力微电子有限公司 | Method for detecting wafer bonding interface defects and storage medium |
| CN111816582A (en) * | 2020-07-23 | 2020-10-23 | 上海华力微电子有限公司 | Wafer bonding defect position positioning method and manufacturing method of semiconductor device sample |
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| CN111081581B (en) * | 2019-11-12 | 2024-03-08 | 长江存储科技有限责任公司 | Bubble defect monitoring method, device, server and readable storage medium |
| CN111599709A (en) * | 2020-05-29 | 2020-08-28 | 上海华力微电子有限公司 | Method for detecting wafer bonding interface defects and storage medium |
| CN111599709B (en) * | 2020-05-29 | 2022-03-29 | 上海华力微电子有限公司 | Method for detecting wafer bonding interface defects and storage medium |
| CN111816582A (en) * | 2020-07-23 | 2020-10-23 | 上海华力微电子有限公司 | Wafer bonding defect position positioning method and manufacturing method of semiconductor device sample |
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