CN110146202A - A kind of pressure resistance type diaphragm pressure sensor and preparation method thereof - Google Patents

A kind of pressure resistance type diaphragm pressure sensor and preparation method thereof Download PDF

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Publication number
CN110146202A
CN110146202A CN201910502343.0A CN201910502343A CN110146202A CN 110146202 A CN110146202 A CN 110146202A CN 201910502343 A CN201910502343 A CN 201910502343A CN 110146202 A CN110146202 A CN 110146202A
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China
Prior art keywords
resistance type
type diaphragm
pressure sensor
piece
graphene
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CN201910502343.0A
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Chinese (zh)
Inventor
詹道桦
王晗
陈新
杨志军
蔡念
刘强
何潇
何超
徐文杰
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Guangdong University of Technology
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Guangdong University of Technology
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Priority to CN201910502343.0A priority Critical patent/CN110146202A/en
Publication of CN110146202A publication Critical patent/CN110146202A/en
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/20Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

This application discloses a kind of pressure resistance type diaphragm pressure sensors, including conductive sheet, graphene conductive piece, the insulating trip between the conductive sheet and the graphene conductive piece, wherein, the graphene conductive piece includes the first graphene conductive unit and the second graphene conductive unit mutually disconnected.It can be seen that, the pressure resistance type diaphragm pressure sensor of the application is made of conductive sheet, graphene conductive piece and insulating trip, since the resistivity of graphene is lower than semiconductor silicon, so the electric conductivity of graphene conductive piece is more preferable, i.e. so that the electric conductivity of pressure resistance type diaphragm pressure sensor improves, also, graphene is single layer of carbon atom structure, so that the thickness of graphene conductive piece is lower than the conductive sheet being fabricated from a silicon, that is, reduce the integral thickness of pressure resistance type diaphragm pressure sensor.In addition, the application also provides a kind of pressure resistance type diaphragm pressure sensor production method having the above advantages.

Description

A kind of pressure resistance type diaphragm pressure sensor and preparation method thereof
Technical field
This application involves membrane-type pressure sensors technical fields, more particularly to a kind of pressure resistance type diaphragm pressure sensor And preparation method thereof.
Background technique
Pressure sensor (Pressure Transducer) be it is a kind of can experience pressure signal, and can be according to certain rule Pressure signal is converted into the device or device of the electric signal of available output by rule.Pressure sensor is the most normal in industrial practice A kind of sensor, be widely used in water conservancy and hydropower, railway traffic, intelligent building, production automatic control, aerospace, military project, Numerous industries such as petrochemical industry, oil well, electric power, ship, lathe, pipeline.
Piezoresistive pressure sensor is one of pressure sensor, and because it is with small in size, structure is simple, differentiability Change, it is at low cost the features such as, be widely used in actual production.Silicon has good conductive property and pressure drag performance, existing Piezoresistive pressure sensor in generally using the chip of silicon perceptually pressure, still, the electric conductivity of one side silicon is not It is sufficiently high, that is, the resistance of pressure sensor is improved, on the other hand waste of energy is influenced by silicon materials, is made with silicon materials Presser sensor chip thickness it is bigger, cause pressure sensor integral thickness larger, be not able to satisfy with pressure sensor The demand of various equipment increasingly lightweight, miniaturization.
Therefore, how to provide a kind of high and thick degree of electric conductivity small pressure sensor, be those skilled in the art urgently It solves the problems, such as.
Summary of the invention
The purpose of the application is to provide a kind of pressure resistance type diaphragm pressure sensor and preparation method thereof, thin to improve pressure resistance type The electric conductivity of membrane pressure sensor, while reducing its thickness.
In order to solve the above technical problems, the application provides a kind of pressure resistance type diaphragm pressure sensor, including conductive sheet, graphite Alkene conductive sheet, the insulating trip between the conductive sheet and the graphene conductive piece, wherein the graphene conductive piece packet Include the first graphene conductive unit and the second graphene conductive unit mutually disconnected.
Optionally, the Thickness range of the insulating trip is 50 microns to 200 microns, including endpoint value.
Optionally, further includes:
Positioned at the conductive sheet away from first protective layer on the surface of the insulating trip;
With the second protective layer positioned at the graphene conductive piece away from the surface of the insulating trip.
Optionally, the conductive sheet is metallic conduction piece.
Optionally, the insulating trip is polyurethane insulating piece.
Optionally, the whole rounded flake of the pressure resistance type diaphragm pressure sensor.
The application also provides a kind of pressure resistance type diaphragm pressure sensor production method, comprising:
Prepare conductive sheet;
Prepare insulating trip;
Using polyimide as raw material, graphene conductive piece is prepared according to predetermined pattern, the graphene conductive piece includes The the first graphene conductive unit and the second graphene conductive unit mutually disconnected;
The conductive sheet, the insulating trip, the graphene conductive piece are stacked gradually, pressure resistance type diaphragm pressure is formed and passes Sensor.
Optionally, the insulating trip for preparing includes:
Using electrostatic spinning technique, the insulating trip is prepared.
Optionally, the conductive sheet for preparing includes:
Metal is placed in injection molding machine, injection parameters is set, is injected into preset die after the metal melting, obtains institute State conductive sheet.
Optionally, described using polyimide as raw material, preparing graphene conductive piece according to predetermined pattern includes:
Using laser sintering technology, using polyimide as raw material, the graphene is prepared according to the predetermined pattern and is led Electric piece.
Pressure resistance type diaphragm pressure sensor provided herein, including conductive sheet, graphene conductive piece, lead positioned at described Insulating trip between electric piece and the graphene conductive piece, wherein the graphene conductive piece includes the first stone mutually disconnected Black alkene conductive unit and the second graphene conductive unit.As it can be seen that the pressure resistance type diaphragm pressure sensor of the application is by conductive sheet, stone Black alkene conductive sheet and insulating trip composition, since the resistivity of graphene is lower than semiconductor silicon, so the conduction of graphene conductive piece Performance is more preferable, i.e., so that the electric conductivity of pressure resistance type diaphragm pressure sensor improves, also, graphene is single layer of carbon atom knot Structure reduces pressure resistance type diaphragm pressure sensor so that the thickness of graphene conductive piece is lower than the conductive sheet being fabricated from a silicon Integral thickness.In addition, the application also provides a kind of pressure resistance type diaphragm pressure sensor production method having the above advantages.
Detailed description of the invention
It, below will be to embodiment or existing for the clearer technical solution for illustrating the embodiment of the present application or the prior art Attached drawing needed in technical description is briefly described, it should be apparent that, the accompanying drawings in the following description is only this Shen Some embodiments please for those of ordinary skill in the art without creative efforts, can be with root Other attached drawings are obtained according to these attached drawings.
Fig. 1 is a kind of structural schematic diagram of pressure resistance type diaphragm pressure sensor provided by the embodiment of the present application;
Fig. 2 is the structural schematic diagram of another kind pressure resistance type diaphragm pressure sensor provided by the embodiment of the present application;
Fig. 3 is a kind of flow chart of the production method of pressure resistance type diaphragm pressure sensor provided by the embodiment of the present application.
Specific embodiment
In order to make those skilled in the art more fully understand application scheme, with reference to the accompanying drawings and detailed description The application is described in further detail.Obviously, described embodiments are only a part of embodiments of the present application, rather than Whole embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not making creative work premise Under every other embodiment obtained, shall fall in the protection scope of this application.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
Just as described in the background section, generally using silicon perceptually pressure in existing piezoresistive pressure sensor Chip, still, the electric conductivity of one side silicon are simultaneously not high enough, that is, improve the resistance of pressure sensor, and waste of energy is another Aspect is influenced by silicon materials, bigger with presser sensor chip thickness made of silicon materials, causes pressure sensor whole thick It spends larger, is not able to satisfy the demand of increasingly lightweight, the miniaturization of the various equipment with pressure sensor.
In view of this, this application provides a kind of pressure resistance type diaphragm pressure sensor, referring to FIG. 1, Fig. 1 is that the application is real A kind of structural schematic diagram of pressure resistance type diaphragm pressure sensor provided by example is applied, which includes leading Electric piece 1, graphene conductive piece 3, the insulating trip 2 between the conductive sheet 1 and the graphene conductive piece 3, wherein described Graphene conductive piece 3 includes the first graphene conductive unit 31 and the second graphene conductive unit 32 mutually disconnected.
Specifically, graphene conductive piece 3 includes that the first graphene conductive unit 31 mutually disconnected and the second graphene are led Electric unit 32, when pressure resistance type diaphragm pressure sensor is not affected by external force, insulating trip 2 is by conductive sheet 1 and graphene conductive Piece 3 is kept apart, and the first graphene conductive unit 31 and the second graphene conductive unit 32 are still in the state mutually disconnected;Work as pressure When resistive diaphragm pressure sensor is not affected by external force, i.e. the effect of being under pressure of conductive sheet 1, conductive sheet 1 and graphene conductive Piece 3 is in contact, the first graphene conductive unit 31 and the conducting of the second graphene conductive unit 32.Due to graphene conductive piece 3 by Graphene is made, and graphene has piezoresistive effect, so when the first graphene conductive unit 31 and the second graphene conductive unit 32 by external force be connected when, since the external force being subject to is of different sizes, the resistance of graphene conductive piece 3 can also generate corresponding change Change, so as to measure the size of resistance value.
It should be noted that being not specifically limited in the present embodiment to the type of conductive sheet 1, as long as conduction can be played Effect can be selected voluntarily.
Optionally, in one embodiment of the application, the conductive sheet 1 is metallic conduction piece, and still, the application is to this And without limitation, in the other embodiments of the application, conductive sheet 1 can also be conductive for alloy conductive piece or composition metal Piece or semiconductor conductive sheet etc..
It should be pointed out that the application does not make specifically the type of metallic conduction piece when conductive sheet 1 is metallic conduction piece It limits, depends on the circumstances, for example, metallic conduction piece can be copper current-conducting piece or aluminium conductive sheet etc.;When conductive sheet 1 is gold When belonging to conductive sheet, the application is also not specifically limited the type of alloy conductive sheet, for example, alloy conductive piece can close for ferrotitanium Golden conductive sheet or manganin conductive sheet etc.;When conductive sheet 1 is composition metal conductive sheet, the application is to composition metal The type of conductive sheet is also not specifically limited, for example, composition metal conductive sheet can be aluminium base class composition metal conductive sheet, or Ni-based class composition metal conductive sheet, etc..
It should be noted that being not specifically limited in the present embodiment to the material of insulating trip 2, as long as in pressure resistance type film pressure Force snesor is not affected by under conditions of external force, can play the role of that conductive sheet 1 and graphene conductive piece 3 is isolated, It can voluntarily select.
Optionally, in one embodiment of the application, the insulating trip 2 is polyurethane insulating piece, still, the application couple This is simultaneously not specifically limited, and in the other embodiments of the application, insulating trip 2 can also be polyvinyl alcohol insulating trip, Huo Zheni Imperial 6 insulating trips or ceramic insulation piece etc..
Optionally, in one embodiment of the application, the whole rounded thin slice of the pressure resistance type diaphragm pressure sensor Shape, still, to this and without limitation, in the other embodiments of the application, pressure resistance type diaphragm pressure sensor is whole by the application Be square flake.
It should be pointed out that pressure resistance type diaphragm pressure sensor is additionally provided with two leads, two leads are connected to First graphene conductive unit 31 and the second graphene conductive unit 32, lead can be plain conductor, and certainly, lead can be with For graphene lead, it is an integral structure with graphene conductive piece 3, specifically please refers to Fig. 2.
Pressure resistance type diaphragm pressure sensor provided by the present embodiment, including conductive sheet 1, graphene conductive piece 3, be located at institute State the insulating trip 2 between conductive sheet 1 and the graphene conductive piece 3, wherein the graphene conductive piece 3 includes mutually disconnecting The first graphene conductive unit 31 and the second graphene conductive unit 32.As it can be seen that the pressure resistance type diaphragm pressure of the present embodiment passes Sensor is made of conductive sheet 1, graphene conductive piece 3 and insulating trip 2, since the resistivity of graphene is lower than semiconductor silicon, so The electric conductivity of graphene conductive piece 3 is more preferable, i.e., so that the electric conductivity of pressure resistance type diaphragm pressure sensor improves, also, stone Black alkene is single layer of carbon atom structure, so that the thickness of graphene conductive piece 3 is lower than the conductive sheet being fabricated from a silicon, that is, reduces pressure The integral thickness of resistive diaphragm pressure sensor.
Preferably, in one embodiment of the application, the Thickness range of the insulating trip 2 is 50 microns to 200 Micron, including endpoint value guarantee that insulating trip 2 plays isolation conductive sheet 1 when pressure resistance type diaphragm pressure sensor is not affected by external force With the effect of graphene conductive piece 3, meanwhile, and the thickness of pressure resistance type diaphragm pressure sensor can be further decreased.
Based on any of the above embodiments, in one embodiment of the application, pressure resistance type diaphragm pressure sensor Further include:
Positioned at the conductive sheet 1 away from first protective layer on the surface of the insulating trip 2;
With the second protective layer positioned at the graphene conductive piece 3 away from the surface of the insulating trip 2.
The purpose that the first protective layer and the second protective layer are arranged in the present embodiment is can to lead to avoid conductive sheet 1, graphene Electric piece 3 is worn by the external world, extends the service life of pressure resistance type diaphragm pressure sensor.
The application also provides a kind of production method of pressure resistance type diaphragm pressure sensor, referring to FIG. 3, Fig. 3 is the application A kind of flow chart of the production method of pressure resistance type diaphragm pressure sensor provided by embodiment, this method comprises:
Step S101: conductive sheet is prepared;
It should be pointed out that being not specifically limited in the present embodiment to the method for preparing conductive sheet, depending on the type of conductive sheet Depending on.
It may also be noted that the type of the conductive sheet prepared in the present embodiment is not specifically limited, for example, conductive sheet can Thinking metallic conduction piece or alloy conductive piece etc., other are capable of the conductive sheet of conduction.
Specifically, in one embodiment of the application, it is described to prepare conductive sheet packet when conductive sheet is metallic conduction piece It includes:
Metal is placed in injection molding machine, injection parameters is set, is injected into preset die after the metal melting, obtains institute State conductive sheet, wherein preset die voluntarily selects as needed.
Specifically, in another embodiment of the application, it, can be using punching press when conductive sheet is alloy conductive piece Mode prepares conductive sheet.
Step S102: insulating trip is prepared;
It should be pointed out that being not specifically limited in the present embodiment to the material of the insulating trip of preparation, for example, insulating trip can Think polyurethane insulating piece perhaps polyvinyl alcohol insulating trip perhaps 6 insulating trip of nylon or ceramic insulation piece, etc..
It may also be noted that being not specifically limited in the present embodiment to the method for preparing insulating trip, can voluntarily select, example Such as, the insulating trip of Plastic can be prepared by the way of injection molding.
Optionally, in one embodiment of the application, the insulating trip for preparing includes:
Using electrostatic spinning technique, the insulating trip is prepared.
Polyurethane insulating piece can be prepared using electrostatic spinning technique, and perhaps polyvinyl alcohol insulating trip or nylon 6 insulate Piece, the Thickness range for the insulating trip that electrostatic spinning technique is prepared is between 50 microns to 200 microns, compared to other Preparation method reduces the thickness of insulating trip, so that the thickness of pressure resistance type diaphragm pressure sensor is smaller.
For preparing polyurethane insulating piece, preparation process is illustrated.
In the environment of humidity 50%, 30 DEG C of temperature, take certain mass polyurethane (TPU) grain dissolution in dimethyl formyl In amine (DMF), 50 DEG C of constant temperature water baths stir the milky turbid for obtaining that concentration is 11~15wt% to being completely dissolved, and then will Milky turbid is poured into electrostatic spinning 3D printer, and setting the figure to be printed, there are also parameters, under printer head Electro-conductive glass is placed for collecting by side, will tear it down from electro-conductive glass by the good electrostatic spinning of the graphic printing set, i.e., Polyurethane insulating piece can be obtained.
When preparing polyvinyl alcohol insulating trip, a certain amount of polyvinyl alcohol (PVA) is dissolved in distilled water, constant temperature 60~80 To being completely dissolved, obtaining concentration is the colorless and transparent solution of 10wt% by DEG C stir about 2h, remaining process refers to polyurethane insulating piece Preparation process.
When preparing 6 insulating trip of nylon, it is mixed that a certain amount of nylon 6 (PA6) is dissolved in formic acid/dimethyl acetamide (9:1) It closes in solution, stirring completely, obtains the PA6 solution that concentration is 15wt%, and environmental condition controls 25 DEG C of temperature, humidity 45~50% RH, remaining process refer to polyurethane insulating piece preparation process.
Step S103: using polyimide as raw material, graphene conductive piece is prepared according to predetermined pattern, the graphene is led Electric piece includes the first graphene conductive unit and the second graphene conductive unit mutually disconnected;
It should be pointed out that being not specifically limited in the present embodiment to predetermined pattern, depend on the circumstances, similarly, this implementation The mode for preparing graphene conductive piece is also not specifically limited in example, can voluntarily be selected, such as electrochemical process.
Optionally, described using polyimide as raw material in one embodiment of the application, it is prepared according to predetermined pattern Graphene conductive piece includes:
Using laser sintering technology, using polyimide as raw material, the graphene is prepared according to the predetermined pattern and is led Electric piece.
Specifically, drawing the predetermined pattern of graphene conductive piece with CAD diagram on computers, then predetermined pattern is imported into Laser engraving machine is put into polyimide, by laser sintered inductive formation graphene, to obtain the graphite with predetermined pattern Alkene conductive sheet, then by the polyimide film excision around obtained graphene conductive piece to get the graphite constituted to graphene Alkene conductive sheet.
Step S104: the conductive sheet, the insulating trip, the graphene conductive piece are stacked gradually, and form pressure resistance type Diaphragm pressure sensor.
It should be pointed out that not done specifically in the present embodiment to the sequence between step S101, step S102, step S103 It limits, can mutually exchange, such as according to step S101, step S103, the sequence of step S102 or step S103, step The sequence, etc. of S101, step S102.
The pressure resistance type diaphragm pressure sensor that pressure resistance type diaphragm pressure sensor preparation method provided herein obtains, Including conductive sheet, graphene conductive piece, the insulating trip between the conductive sheet and the graphene conductive piece, wherein institute Stating graphene conductive piece includes the first graphene conductive unit and the second graphene conductive unit mutually disconnected.As it can be seen that this Shen Pressure resistance type diaphragm pressure sensor please is made of conductive sheet, graphene conductive piece and insulating trip, due to the resistivity of graphene Lower than semiconductor silicon, so the electric conductivity of graphene conductive piece is more preferable, i.e., so that the conduction of pressure resistance type diaphragm pressure sensor Performance improves, also, graphene is single layer of carbon atom structure, is fabricated from a silicon so that the thickness of graphene conductive piece is lower than Conductive sheet reduces the integral thickness of pressure resistance type diaphragm pressure sensor.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with it is other The difference of embodiment, same or similar part may refer to each other between each embodiment.For being filled disclosed in embodiment For setting, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is referring to method part Explanation.
Pressure resistance type diaphragm pressure sensor and preparation method thereof provided herein is described in detail above.This Specific case is applied in text, and the principle and implementation of this application are described, the explanation of above example is only intended to Help understands the present processes and its core concept.It should be pointed out that for those skilled in the art, Under the premise of not departing from the application principle, can also to the application, some improvement and modification can also be carried out, these improvement and modification are also fallen Enter in the protection scope of the claim of this application.

Claims (10)

1. a kind of pressure resistance type diaphragm pressure sensor, which is characterized in that led including conductive sheet, graphene conductive piece, positioned at described Insulating trip between electric piece and the graphene conductive piece, wherein the graphene conductive piece includes the first stone mutually disconnected Black alkene conductive unit and the second graphene conductive unit.
2. pressure resistance type diaphragm pressure sensor as described in claim 1, which is characterized in that the Thickness model of the insulating trip It encloses for 50 microns to 200 microns, including endpoint value.
3. pressure resistance type diaphragm pressure sensor as claimed in claim 1 or 2, which is characterized in that further include:
Positioned at the conductive sheet away from first protective layer on the surface of the insulating trip;
With the second protective layer positioned at the graphene conductive piece away from the surface of the insulating trip.
4. pressure resistance type diaphragm pressure sensor as claimed in claim 3, which is characterized in that the conductive sheet is metallic conduction Piece.
5. pressure resistance type diaphragm pressure sensor as claimed in claim 4, which is characterized in that the insulating trip is polyurethane insulating Piece.
6. pressure resistance type diaphragm pressure sensor as claimed in claim 5, which is characterized in that the pressure resistance type diaphragm pressure sensing The whole rounded flake of device.
7. a kind of pressure resistance type diaphragm pressure sensor production method characterized by comprising
Prepare conductive sheet;
Prepare insulating trip;
Using polyimide as raw material, graphene conductive piece is prepared according to predetermined pattern, the graphene conductive piece includes mutual The the first graphene conductive unit and the second graphene conductive unit disconnected;
The conductive sheet, the insulating trip, the graphene conductive piece are stacked gradually, pressure resistance type diaphragm pressure sensing is formed Device.
8. pressure resistance type diaphragm pressure sensor production method as claimed in claim 7, which is characterized in that described to prepare insulating trip Include:
Using electrostatic spinning technique, the insulating trip is prepared.
9. pressure resistance type diaphragm pressure sensor production method as claimed in claim 8, which is characterized in that described to prepare conductive sheet Include:
Metal is placed in injection molding machine, injection parameters is set, is injected into preset die after the metal melting, obtains described lead Electric piece.
10. such as the described in any item pressure resistance type diaphragm pressure sensor production methods of claim 7 to 9, which is characterized in that described Using polyimide as raw material, preparing graphene conductive piece according to predetermined pattern includes:
Using laser sintering technology, using polyimide as raw material, the graphene conductive piece is prepared according to the predetermined pattern.
CN201910502343.0A 2019-06-11 2019-06-11 A kind of pressure resistance type diaphragm pressure sensor and preparation method thereof Pending CN110146202A (en)

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