CN110145723A - Backlight module - Google Patents
Backlight module Download PDFInfo
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- CN110145723A CN110145723A CN201910556922.3A CN201910556922A CN110145723A CN 110145723 A CN110145723 A CN 110145723A CN 201910556922 A CN201910556922 A CN 201910556922A CN 110145723 A CN110145723 A CN 110145723A
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- multilayer film
- wavelength
- backlight module
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 71
- 238000002310 reflectometry Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 239000002096 quantum dot Substances 0.000 claims description 7
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 description 34
- 238000010586 diagram Methods 0.000 description 15
- 238000001228 spectrum Methods 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 6
- 230000000630 rising effect Effects 0.000 description 6
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000013589 supplement Substances 0.000 description 3
- 238000000560 X-ray reflectometry Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/08—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for producing coloured light, e.g. monochromatic; for reducing intensity of light
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
- F21V9/32—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/40—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters with provision for controlling spectral properties, e.g. colour, or intensity
- F21V9/45—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters with provision for controlling spectral properties, e.g. colour, or intensity by adjustment of photoluminescent elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Planar Illumination Modules (AREA)
- Liquid Crystal (AREA)
- Led Device Packages (AREA)
Abstract
The present invention discloses a kind of backlight module, includes light source, multilayer film, wavelength conversion layer.Multilayer film is set on light source.Wavelength conversion layer is set to one side of the multilayer film in contrast to light source.Some light from light source is converted to multiple coloured light by wavelength conversion layer, includes the first coloured light and the second coloured light.Intensity peak corresponding wavelength value of the corresponding wavelength value of the intensity peak of first coloured light less than the second coloured light.Multilayer film has the reflected range about wavelength, and wavelength is fallen within the light in reflected range and reflected by multilayer film, and the wavelength value of the lower limit of reflected range is not more than the corresponding wavelength value of the first coloured light intensity peak.Light utilization efficiency can be improved in the present invention.
Description
Technical field
The present invention relates to a kind of backlight modules；Specifically, the present invention relates to a kind of backlight moulds applied to display device
Block.
Background technique
The mode that light emitting diode collocation light excitation material (such as fluorescent powder) provides backlight is that existing display device is main
The backlight of use generates the practice.In general, an optical diaphragm can be made in light excitation material, and it is arranged on a light emitting diode
Side.When the light that light emitting diode issues arrives at optical diaphragm, particle (such as the phosphor particles in optical diaphragm can be excited
Son) to generate the light of different colours.However, some light are not towards light direction in light caused by being excited
Advance, this will cause light utilization to decline.Therefore existing display device still has much room for improvement.
Summary of the invention
A purpose of the present invention is that providing a kind of backlight module, light utilization efficiency can be improved.
To achieve the above object, the present invention provides a kind of backlight module, includes light source, multilayer film, wavelength conversion layer.Multilayer
Film is set on light source.Wavelength conversion layer is set to one side of the multilayer film in contrast to light source.Wavelength conversion layer will be from light source
Some light is converted to multiple coloured light, includes the first coloured light and the second coloured light.The corresponding wavelength value of the intensity peak of first coloured light
Less than the corresponding wavelength value of intensity peak of the second coloured light.Multilayer film has a reflected range about wavelength, and multilayer film is by wavelength
The light reflection in reflected range is fallen within, and the wavelength value of the lower limit of reflected range is corresponding no more than the first coloured light intensity peak
Wavelength value.The light of particular range of wavelengths is reflected by multilayer film, so that the non-light to advance towards light direction is changed to edge and goes out
Light direction outgoing, to improve light utilization.
Wherein, the lower limit of the reflected range is located at the side that the first coloured light intensity successively decreases with wavelength value and successively decreased, this is anti-
The wavelength value for penetrating the lower limit of range is not more than first coloured light in 20% corresponding wavelength value of intensity peak.
Wherein, which is fluorescent glue, and the wavelength conversion layer is coated directly on the multilayer film.
Wherein, which is quantum dot diaphragm, which further includes a substrate, and the wavelength conversion layer and
The multilayer film is arranged in the opposing sides of the substrate.
Wherein, which is greater than 80% in the reflectivity of the reflected range.
Wherein, the wavelength value of the upper limit of the reflected range is not more than 780nm.
Wherein, which is blue light-emitting diode, which is green light, and the multilayer film allows blue light to penetrate.
Wherein, the light of the light source is greater than 50% between the penetrance of 380nm to 500nm in wave-length coverage.
Wherein, which is ultraviolet light-emitting diodes, which is blue light, and the multilayer film allows ultraviolet light to wear
Thoroughly.
Backlight module of the invention, can be improved light utilization efficiency.
Below in conjunction with the drawings and specific embodiments, the present invention will be described in detail, but not as a limitation of the invention.
Detailed description of the invention
Fig. 1 is an embodiment schematic diagram of backlight module of the present invention.
Fig. 2 is the enlarged diagram of backlight module.
Fig. 3 is the schematic diagram of multilayer film reflecting spectrum and wavelength conversion layer luminous intensity.
Fig. 4 is the schematic diagram that multilayer film penetrates frequency spectrum.
Fig. 5 is another embodiment enlarged diagram of backlight module.
Fig. 6 is another embodiment enlarged diagram of backlight module.
Fig. 7 is the schematic diagram of multilayer film reflecting spectrum and wavelength conversion layer luminous intensity.
Fig. 8 is the schematic diagram of backlight module luminous intensity.
Wherein, appended drawing reference:
1 backlight module
10 light sources
20 multilayer films
21 first faces
22 second faces
30 wavelength conversion layers
32,32B, 32G, 32R particle
34,34G, 34R particle
40 substrates
41 third faces
42 fourth faces
C11, C12 coloured light
C21, C22, C23 coloured light
C3, C31, C32, C33 coloured light
C4 coloured light
P1, P2, P3 peak value
R1, R2 reflected range
Specific embodiment
It should be appreciated that ought the component of such as layer, film, region or substrate be referred to as another in another element "upper" or " being connected to "
When one element, it can be connect directly on another element or with another element or intermediary element can be there is also.On the contrary,
When element is referred to as " directly on another element " or when " being directly connected to " another element, intermediary element is not present.
It will be appreciated that though term " first ", " second ", " third " etc. herein can be used for describing various elements,
Component, region, layer and/or part, but these component, assembly units, region and/or part should not be limited by these terms.This
A little terms are only used for distinguishing a component, assembly unit, region, layer or part and another component, assembly unit, region, layer or part
It opens.Therefore, " first element " discussed below, " component ", " region ", " layer " or " coloured light " can be referred to as second element, portion
Part, region, layer or coloured light are without departing from teaching herein.
It is used herein " about ", " approximation " or " substantially " include described value and determined in those of ordinary skill in the art
Particular value acceptable deviation range in average value, it is contemplated that the spy of the measurement and error relevant to measurement that are discussed
Fixed number amount (that is, limitation of measuring system).For example, " about " can indicate in one or more standard deviations of described value, or
± 30%, in ± 20%, ± 10%, ± 5%.Furthermore " about " used herein, " approximation " or " substantial " can be according to optical
Matter, etching property or other properties to select more acceptable deviation range or standard deviation, and can not have to a standard deviation
It is applicable in whole property.
Fig. 1 is an embodiment schematic diagram of backlight module 1 of the present invention.As shown in Figure 1, backlight module 1 includes light source 10, more
Tunic 20, wavelength conversion layer 30.Multilayer film 20 is set to 10 top of light source, preferably accompanies between one between the light-emitting surface of light source 10
Away from but not limited to this.Multilayer film 20 has the first face 21 and the second face 22.It is opposite that wavelength conversion layer 30 is set to multilayer film 20
In the one side (as shown being the first face 21) of light source 10, and some light from light source 10 is converted into multiple coloured light.It is more
Tunic 20 allows the light of light source 10 to penetrate, multilayer film 20 of turning back after 30 conversion of lease making wavelength conversion layer in the middle part of the light penetrated,
And it is emitted after multilayer film 20 at least partly reflects in backlight module 1.The multilayer film 20 is preferably by with different refractivity
Multiple media composed by optical diaphragm, the light of particular range of wavelengths can be reflected.
Specifically, please referring to the schematic diagram of Fig. 2.As shown in Fig. 2, the light of light source 10, which penetrates multilayer film 20, arrives at wavelength
Conversion layer 30.Particle 32 is filled in wavelength conversion layer 30, it is convertible after particle 32 is excited by the light from light source 10
For different color light.In the example in figure 2, light a part of light source 10 maintains original color, and another part is via particle 32
Switch to different colours.In detail, some light from light source 10 is respectively converted into coloured light by particle 32G and particle 32R
(C11, C12) and coloured light (C21, C22, C23).Another part light from light source 10 is coloured light C3 caused by light source.Such as
Shown in Fig. 2, coloured light C3 is directly emitted after penetrating multilayer film 20 and wavelength conversion layer 30, and coloured light C12 goes out after particle 32G generation
It penetrates, coloured light (C21, C22) is emitted after particle 32R generation, and coloured light C11 and coloured light C23 is emitted after being reflected by multilayer film 20.
Aforementioned coloured light (C11, C12) and coloured light (C21, C22, C23) are the coloured light of different wave length.Coloured light (C11, C12)
The corresponding wavelength value of intensity peak is less than the corresponding wavelength value of intensity peak of coloured light (C21, C22, C23).For example, light source
10 be blue light-emitting diode, and multilayer film 20 allows blue light to penetrate.Wavelength conversion layer 30 can be to be coated directly onto multilayer film 20
On fluorescent glue, the internal particle 32G filled and particle 32R is respectively green and red fluorescence powder, and can be generated respectively green
Light and feux rouges.But the present invention is not subject to the limits, and in other embodiments, wavelength conversion layer 30 can also be to be coated directly onto multilayer film 20
On quantum dot film layer, the internal particle 32G filled and particle 32R is respectively the quantum dot that can produce green light and feux rouges.With
For Fig. 2, coloured light (C11, C12) is green light, and coloured light (C21, C22, C23) is feux rouges.Multilayer film 20 is, for example, that dichroic filters
Piece (Dichroic filter), can be by green light and reflection to red light.In other words, multilayer film 20 has the reflected range about wavelength,
Wavelength, which falls within the light in reflected range, to be reflected by multilayer film 20.In the preceding example, the reflected range of multilayer film 20 includes
The wave band of green light and feux rouges.In an embodiment, multilayer film 20 is preferably greater than 80% in the reflectivity of reflected range, to ensure to improve
The effect of light utilization efficiency.As shown in Fig. 2, for coloured light (C11, C12) and coloured light (C21, C22, C23) after conversion, wherein color
Light C11 and coloured light C23 advance towards in contrast to light direction originally, by multilayer film 20, after coloured light C11 and coloured light C23 reflection
It is changed to be emitted along light direction, so that light utilization is promoted.Above-mentioned light direction preferably refers to that light can be from wavelength conversion layer
30 light emission side leaves the direction of wavelength conversion layer 30, without being limited with the direction perpendicular to 30 surface of wavelength conversion layer.
Fig. 3 is the schematic diagram of multilayer film reflecting spectrum and wavelength conversion layer luminous intensity.In Fig. 3, curve L1 is wavelength
Conversion layer shines frequency spectrum, and curve L2 is multilayer film reflecting spectrum.As shown in curve L1, the coloured light after wavelength conversion layer conversion includes
Green light and feux rouges.The corresponding wavelength value of intensity peak P1 (about 530nm) of green light is less than the corresponding wave of intensity peak P2 of feux rouges
Long value (about 655nm).In other words, green light is in the coloured light after conversion, and coloured light peak value corresponds to the coloured light of minimal wave length.
As shown in curve L2, multilayer film has different reflectivity to different wave length light, and has the reflection model about wavelength
Enclose R1.In the example in figure 3, the corresponding reflectivity of reflected range R1 is substantially or close to 100%.Due in reflected range R1
The possible narrow difference of the reflectivity of each wavelength, aforementioned reflectivity values refer to the average reflectance in reflected range R1.Such as Fig. 3 institute
Show, the wave band of green light and feux rouges is fallen in the reflected range R1 of multilayer film, therefore multilayer film is by green light and reflection to red light.
Furthermore, bound of the reflected range R1 preferably with wavelength.In an embodiment, the upper limit of reflected range R1
Wavelength value is not more than 780nm.On the other hand, coloured light of the wavelength value of the lower limit of reflected range R1 no more than most short-wave band after conversion
Intensity peak corresponding to wavelength value.In other words, the lower limit of reflected range R1 can be according to the intensity peak of the coloured light of minimal wave length
Wavelength value corresponding to value (i.e. P1) defines.By taking Fig. 3 as an example, the coloured light of minimal wave length is green light, the lower limit of reflected range R1
Wavelength value (about 510nm) no more than wavelength value corresponding to green intensity peak value P1.In other words, multilayer film is by the color after conversion
In the wavelength value of light, more than or equal to the color light reflective of green intensity peak value P1 corresponding wavelength value.
The lower limit of aforementioned reflected range R1 is for example subject to the minimum point of x-ray reflectivity curve rising edge.Such as Fig. 3 institute
Show, curve L2 rises to averagely higher reflection from averagely lower reflectivity along rising edge between wavelength 480nm and 530nm
Rate, wavelength value corresponding to minimum point of the reflected range R1 using rising edge is as its lower limit value.
In preferred embodiment, the wavelength value of the lower limit of reflected range R1 no more than most short-wave band after conversion coloured light in intensity
The corresponding wavelength value of the 20% of peak value.By taking Fig. 3 as an example, the coloured light of minimal wave length is green light, the wavelength of the lower limit of reflected range R1
Value is no more than wavelength value corresponding to the 20% of green intensity peak value P1.In other words, multilayer film is by the wavelength of the coloured light after conversion
In value, the color light reflective of the 20% corresponding wavelength value more than or equal to green intensity peak value P1.It need to supplement, aforementioned reflection model
Enclose R1 lower limit correspond to most short-wave band after conversion coloured light intensity successively decrease with wavelength value and the side successively decreased, also that is, intensity peak
The corresponding wavelength value of the 20% of value is positioned at the side of short wavelength.
The frequency spectrum that penetrates that Fig. 4 is painted multilayer film is please referred to, curve L3 penetrates frequency spectrum for multilayer film.As previously mentioned, multilayer
Film is penetrated by the light of light source.By taking blue light source as an example, (penetrance of 450nm to 495nm) are preferable in blue light range for multilayer film
Greater than 50%, even up to 80% or so.In an embodiment, multilayer film wearing between 380nm to 500nm in range of light wavelengths
Saturating rate is greater than 50%.It designs whereby, it is ensured that the light of light source is provided to wavelength conversion layer, to improve light utilization efficiency.
Fig. 5 is another embodiment enlarged diagram of backlight module 1.As shown in figure 5, backlight module 1 includes light source 10, more
Tunic 20, wavelength conversion layer 30, substrate 40.Multilayer film 20 is set on light source 10.Wavelength conversion layer 30 is located at 20 phase of multilayer film
Instead in the side of light source 10.Substrate 40 has third face 41 and fourth face 42 is opposing sides.Wavelength conversion layer 30 and multilayer film
20 are arranged in the opposing sides of substrate 40.Some light from light source 10 is converted to multiple coloured light by wavelength conversion layer 30.
Light after multilayer film 20 allows the light of light source 10 to penetrate and convert wavelength conversion layer 30 reflects.It is filled out in wavelength conversion layer 30
It can be exchanged into different color light after particle 34 is excited by the light from light source 10 filled with particle 34.For example, light source
10 be blue light-emitting diode, and multilayer film 20 allows blue light to penetrate.Wavelength conversion layer 30 is to be arranged by substrate 40 in multilayer
Fluorescent glue or quantum dot diaphragm or film layer on film 20, the internal particle 34G filled and particle 34R can generate green light respectively
And feux rouges.It need to supplement, for constituting backlight module as shown in Figure 5 using substrate, (i.e. light need to pass through multilayer film 20, base
Then material 40 arrives at the structure of wavelength conversion layer 30), the ranges of indices of refraction of substrate is preferably 1.35 to 1.65, it is ensured that comes from light
The light in source 10 is provided to wavelength conversion layer.
Fig. 6 is another embodiment enlarged diagram of backlight module 1.As shown in fig. 6, the light of light source 10 penetrates multilayer film
20 arrive at wavelength conversion layer 30.Particle 32 is filled in wavelength conversion layer 30, when particle 32 is swashed by the light from light source 10
After hair, different color light can be exchanged into.In the example of fig. 6, light a part of light source 10 maintains original color, another part
Switch to different colours via particle 32.In detail, some light from light source 10 is by particle 32B, particle 32G and particle
32R is respectively converted into coloured light (C11, C12), coloured light (C21, C22) and coloured light (C31, C32, C33).From the another of light source 10
Some light is coloured light C4 caused by light source 10.As shown in fig. 6, coloured light C12 is emitted after particle 32B generation, coloured light C21 warp
Particle 32G is emitted after generating, and coloured light (C32, C33) is emitted after particle 32R generation, and coloured light C11, coloured light C22 and coloured light C31
It is emitted after being reflected by multilayer film 20.
Aforementioned coloured light (C11, C12), coloured light (C21, C22) and coloured light (C31, C32, C33) are the coloured light of different wave length.Color
The corresponding wavelength value of intensity peak of light (C11, C12) is less than the corresponding wavelength value of intensity peak and color of coloured light (C21, C22)
The corresponding wavelength value of intensity peak of light (C31, C32, C33).For example, light source 10 is ultraviolet light-emitting diodes, and more
Tunic 20 allows ultraviolet light to penetrate.Wavelength conversion layer 30 can be the fluorescent glue being coated directly on multilayer film 20, internal filling
Particle 32B, particle 32G and particle 32R be respectively blue, green and red fluorescence powder, and can generate respectively blue and green light and
Feux rouges.By taking Fig. 6 as an example, coloured light (C11, C12) is blue light, and coloured light (C21, C22) is green light, and coloured light (C31, C32, C33) is red
Light.Multilayer film 20 can be by blue and green light and reflection to red light.In other words, multilayer film 20 has the reflected range about wavelength, wavelength
Falling within the light in reflected range can be reflected by multilayer film 20.In the preceding example, the reflected range of multilayer film 20 include blue light,
The wave band of green light and feux rouges.But this case is not subject to the limits, in other embodiments, wavelength conversion layer 30 can also be coated directly onto it is more
Quantum dot film layer on tunic 20, internal particle 32B, particle 32G and the particle 32R filled are respectively that can produce blue light, green
The quantum dot of light and feux rouges.
In an embodiment, multilayer film 20 is preferably greater than 80% in the reflectivity of reflected range, to ensure to improve light utilization efficiency
Effect.As shown in fig. 6, for coloured light (C11, C12), coloured light (C21, C22) and coloured light (C31, C32, C33) after conversion,
Wherein coloured light C11, coloured light C22 and coloured light C31 advance towards in contrast to light direction originally, by multilayer film 20 by coloured light C11, color
It is changed to be emitted along light direction after light C22 and coloured light C31 reflection, so that light utilization is promoted.Above-mentioned light direction is preferable
Refer to that light can leave the direction of wavelength conversion layer 30 from the light emission side of wavelength conversion layer 30, without perpendicular to wavelength conversion layer 30
The direction on surface is limited.
Fig. 7 is the schematic diagram of multilayer film reflecting spectrum and wavelength conversion layer luminous intensity.In Fig. 7, curve L4 is wavelength
Conversion layer shines frequency spectrum, and curve L5 is multilayer film reflecting spectrum.As shown in curve L4, the coloured light after wavelength conversion layer conversion includes
Blue and green light and feux rouges respectively have intensity peak P1, P2, P3.The corresponding wavelength value of intensity peak P1 (about 445nm) of blue light
Less than the corresponding wavelength value of intensity peak P2 (about 530nm) of green light, it is also smaller than the corresponding wavelength value of intensity peak P3 of feux rouges
(about 655nm).In other words, blue light is in the coloured light after conversion, and coloured light peak value corresponds to the coloured light of minimal wave length.
As shown in curve L5, multilayer film has different reflectivity to different wave length light, and has the reflection model about wavelength
Enclose R2.In the example of fig. 7, the corresponding reflectivity of reflected range R2 is substantially or close to 100%.Due in reflected range R2
The possible narrow difference of the reflectivity of each wavelength, aforementioned reflectivity values refer to the average reflectance in reflected range R2.Such as Fig. 7 institute
Show, the wave band of blue and green light and feux rouges is fallen in the reflected range R2 of multilayer film, therefore multilayer film is by blue and green light and feux rouges
Reflection.
Furthermore, bound of the reflected range R2 preferably with wavelength.In an embodiment, the upper limit of reflected range R2
Wavelength value is not more than 780nm.On the other hand, coloured light of the wavelength value of the lower limit of reflected range R2 no more than most short-wave band after conversion
Intensity peak (i.e. P1) corresponding to wavelength value.In other words, the lower limit of reflected range R2 can be according to the coloured light of minimal wave length
Wavelength value corresponding to intensity peak defines.By taking Fig. 7 as an example, the coloured light of minimal wave length is blue light, the lower limit of reflected range R2
Wavelength value (about 405nm) no more than wavelength value corresponding to blue light strength peak value P1.In other words, multilayer film is by the color after conversion
In the wavelength value of light, more than or equal to the color light reflective of blue light strength peak value P1 corresponding wavelength value.Under aforementioned reflected range R2
Limit is for example subject to the minimum point of x-ray reflectivity curve rising edge.As shown in fig. 7, curve L5 is in wavelength 380nm and 430nm
Between from averagely lower reflectivity along rising edge rise to averagely higher reflectivity, reflected range R2 is with the minimum of rising edge
The corresponding wavelength value of point is as its lower limit value.
In preferred embodiment, the wavelength value of the lower limit of reflected range R2 no more than most short-wave band after conversion coloured light in intensity
The corresponding wavelength value of the 20% of peak value.By taking Fig. 7 as an example, the coloured light of minimal wave length is blue light, the wavelength of the lower limit of reflected range R2
Value is no more than wavelength value corresponding to the 20% of blue light strength peak value P1.In other words, multilayer film is by the wavelength of the coloured light after conversion
In value, the color light reflective of the 20% corresponding wavelength value more than or equal to blue light strength peak value P1.It need to supplement, aforementioned reflection model
Enclose R2 lower limit correspond to most short-wave band after conversion coloured light intensity successively decrease with wavelength value and the side successively decreased, also that is, intensity peak
The corresponding wavelength value of the 20% of value is positioned at the side of short wavelength.
Fig. 8 is the schematic diagram of backlight module luminous intensity.In fig. 8, curve L6 (solid line) is backlight of the embodiment of the present invention
The luminous frequency spectrum of module, backlight module has multilayer film above-mentioned and the fluorescence coating of use is as wavelength conversion layer, is sent out with blue light
Optical diode is as light source.Curve L7 (dotted line) is the luminous frequency spectrum of the backlight module as control experiment group, the backlight of control
Module only has fluorescence coating and the setting without multilayer film.As shown in figure 8, curve L6 is in wavelength 500nm by the setting of multilayer film
Above intensity is obviously improved compared with curve L7.
Further as shown in Table 1, the backlight module of backlight module of the embodiment of the present invention and control experiment group is listed respectively
Structure, brightness, brightness percentage relationship.Brightness is the integrated value of area under curve L6 (or L7).Brightness percentage is to compare
On the basis of the brightness of the backlight module of experimental group, therefore the brightness percentage of the backlight module of control experiment group is set to 100%.Such as
Shown in table one, backlight module brightness of the embodiment of the present invention increases above 80%, it can thus be appreciated that can be had using backlight module of the present invention
Effect improves light utilization efficiency.
Table one
In addition, choosing different set-up mode observation brightness changes.In table two, sample A is the backlight of the embodiment of the present invention
Module, backlight module has multilayer film and the fluorescence coating of use is as wavelength conversion layer, using blue light-emitting diode as light source.
Sample B is the backlight module of control, uses same composition from sample A but different set-up modes.In sample B, multilayer film changes
To be set to one side of the fluorescence coating in contrast to light source.As shown in Table 2, on the basis of sample A backlight module brightness (100%), sample
The brightness of this B only remains 13%.It can thus be appreciated that due to the light after multilayer film meeting reflected fluorescent light layer conversion, when fluorescence coating is compared with multilayer film
It is arranged closer to light source, the light of part light source first can be converted to different color light by fluorescence coating, then the light after fluorescence coating conversion
Line is nearly all reflected by multilayer film, it is apparent that can effectively improve light utilization efficiency using sample A.
Table two
| Sample A | Sample B (control) | |
| Superstructure | Fluorescence coating | Multilayer film |
| Understructure | Multilayer film | Fluorescence coating |
| Brightness (nits) | 504 | 65 |
| % | 100% | 13% |
The present invention is described by above-mentioned related embodiment, however above-described embodiment is only to implement example of the invention.
It must be noted that the embodiment disclosed is not limiting as the scope of the present invention.
Certainly, the present invention can also have other various embodiments, without deviating from the spirit and substance of the present invention, ripe
Various corresponding changes and modifications, but these corresponding changes and modifications can be made according to the present invention by knowing those skilled in the art
It all should belong to the protection scope of the claims in the present invention.
Claims (9)
1. a kind of backlight module, characterized by comprising:
One light source；
One multilayer film is set on the light source；
One wavelength conversion layer is set to one side of the multilayer film in contrast to the light source, and wherein the wavelength conversion layer will come from the light
The some light in source is converted to multiple coloured light, includes one first coloured light and one second coloured light, the intensity peak pair of first coloured light
The wavelength value answered is less than the corresponding wavelength value of intensity peak of second coloured light；
Wherein, which has the reflected range about wavelength, which falls within wavelength the light in the reflected range
Line reflection, and the wavelength value of the lower limit of the reflected range is not more than the corresponding wavelength value of the first coloured light intensity peak.
2. backlight module according to claim 1, which is characterized in that it is strong that the lower limit of the reflected range is located at first coloured light
The side successively decreased with wavelength value and successively decreased is spent, the wavelength value of the lower limit of the reflected range is no more than first coloured light in intensity peak
20% corresponding wavelength value.
3. backlight module according to claim 1, which is characterized in that the wavelength conversion layer is fluorescent glue, and the wavelength turns
Layer is changed to be coated directly on the multilayer film.
4. backlight module according to claim 1, which is characterized in that the wavelength conversion layer is quantum dot diaphragm, the backlight
Module further includes a substrate, and the wavelength conversion layer and the multilayer film are arranged in the opposing sides of the substrate.
5. backlight module according to claim 1, which is characterized in that the multilayer film is greater than in the reflectivity of the reflected range
80%.
6. backlight module according to claim 1, which is characterized in that the wavelength value of the upper limit of the reflected range is not more than
780nm。
7. backlight module according to claim 1, which is characterized in that the light source is blue light-emitting diode, first color
Light is green light, and the multilayer film allows blue light to penetrate.
8. backlight module according to claim 1, which is characterized in that the light of the light source is in wave-length coverage between 380nm
Penetrance to 500nm is greater than 50%.
9. backlight module according to claim 1, which is characterized in that the light source is ultraviolet light-emitting diodes, this first
Coloured light is blue light, and the multilayer film allows ultraviolet light to penetrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210960552.1A CN115218160A (en) | 2018-12-14 | 2019-06-25 | Backlight module |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107145324A TWI688805B (en) | 2018-12-14 | 2018-12-14 | Backlight module |
| TW107145324 | 2018-12-14 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210960552.1A Division CN115218160A (en) | 2018-12-14 | 2019-06-25 | Backlight module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110145723A true CN110145723A (en) | 2019-08-20 |
Family
ID=67596493
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910556922.3A Pending CN110145723A (en) | 2018-12-14 | 2019-06-25 | Backlight module |
| CN202210960552.1A Pending CN115218160A (en) | 2018-12-14 | 2019-06-25 | Backlight module |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210960552.1A Pending CN115218160A (en) | 2018-12-14 | 2019-06-25 | Backlight module |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN110145723A (en) |
| TW (1) | TWI688805B (en) |
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| CN110993816A (en) * | 2019-11-21 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN115308947A (en) * | 2022-08-15 | 2022-11-08 | 深圳市南极光电子科技股份有限公司 | Backlight module applied to Mini LED and assembling method thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW202022455A (en) | 2020-06-16 |
| CN115218160A (en) | 2022-10-21 |
| TWI688805B (en) | 2020-03-21 |
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