CN110139458A - A kind of electrode assembly and plasma apparatus of plasma apparatus - Google Patents
A kind of electrode assembly and plasma apparatus of plasma apparatus Download PDFInfo
- Publication number
- CN110139458A CN110139458A CN201910261302.7A CN201910261302A CN110139458A CN 110139458 A CN110139458 A CN 110139458A CN 201910261302 A CN201910261302 A CN 201910261302A CN 110139458 A CN110139458 A CN 110139458A
- Authority
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- China
- Prior art keywords
- electrode assembly
- plasma apparatus
- pipe
- cooling pipe
- intermediate region
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Links
- 238000001816 cooling Methods 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 241000270295 Serpentes Species 0.000 claims description 11
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- RLYSXAZAJUMULG-UHFFFAOYSA-N 6-methyl-3-propan-2-ylcyclohex-2-en-1-one Chemical compound CC(C)C1=CC(=O)C(C)CC1 RLYSXAZAJUMULG-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
Abstract
The invention discloses a kind of electrode assembly of plasma apparatus and plasma apparatus, the electrode assembly of the plasma apparatus includes the lower substrate, cooling pipe and upper substrate set gradually from top to bottom, the lowering ability of the cooling pipe is incremented by around by centre, the temperature of the intermediate region of electrode assembly is set to be higher than the temperature of peripheral regions, the strength of discharge for increasing intermediate region, improving the electric discharge of electrode assembly intermediate region weak causes to etch non-uniform problem.
Description
Technical field
The present invention relates to the electrode assemblies and plasma of plasma apparatus field more particularly to a kind of plasma apparatus to set
It is standby.
Background technique
Plasma apparatus is widely used in the occasions such as plasma cleaning, etching, plated film, mistake of the plasma apparatus in electric discharge
Journey, since electric current is passed through from the surface of electrode, so there are electrode plate middle strength of discharges to be weaker than surrounding frontier district
The case where domain, during plasma etching circuit board, there are electrode middle etch amount be lower than surrounding the case where.Actually answering
In, due to strength of discharge unevenly more difficult direct discovery, staff finding that product etching, cleaning are uneven very
Hardly possible finds its basic reason, therefore those skilled in the art often ignore this problem, cause plasma discharge uneven.
The electrode of existing plasma apparatus by the way of gun drilling, the purpose of the cooling device used often in order to
It reduces temperature and enables the temperature of electrode assembly relatively uniform, if cooling pipe uses snakelike structure, cooling water is at the uniform velocity
Electrode interior is flowed through, full wafer electrode temperature is also relatively uniform.Therefore in discharge process, intermediate region electric discharge is weaker than surrounding, equipment
Etching is uneven.By theoretical calculating, discharges weak phenomenon if to change electrode intermediate region, can take and improve in electrode
Between region temperature mode, improve intermediate region electric discharge intensity, to improve the etch quantity of intermediate region.
Summary of the invention
In order to overcome the above-mentioned deficiencies of the prior art, the present invention provides a kind of electrode assembly of plasma apparatus and wait from
Sub- equipment solves the problems, such as that the electrode assembly intermediate region etch quantity of plasma apparatus is low.
The technical solution adopted by the present invention to solve the technical problems are as follows:
A kind of electrode assembly of plasma apparatus, including the lower substrate, cooling pipe and upper base set gradually from top to bottom
The lowering ability of plate, the cooling pipe is incremented by around by centre.
As a further improvement of the foregoing solution, the cooling pipe includes interconnected water inlet pipe and outlet pipe, institute
Water inlet pipe and the setting of outlet pipe alternate intervals are stated, the water inlet pipe is the rectangular coil pipeline extended from periphery to center, described
Outlet pipe is the rectangular coil pipeline extended around from center.
As a further improvement of the foregoing solution, the distance of the alternate intervals of the water inlet pipe and outlet pipe is outside by center
It encloses and is gradually reduced.
As a further improvement of the foregoing solution, the shape of the cooling pipe and the shape of fermat spiral are consistent.
As a further improvement of the foregoing solution, the cooling pipe includes being symmetrically set and shape consistent first
The distribution density of snake pipe and the second snake pipe, first snake pipe and the second snake pipe from centre to both ends by
It is cumulative to add.
As a further improvement of the foregoing solution, the cooling pipe be SUS304 stainless steel cooling pipe road or SUS316 not
Become rusty steel cooling pipe.
As a further improvement of the foregoing solution, the same position of the upper substrate and lower substrate is equipped with several through-holes.
As a further improvement of the foregoing solution, the upper substrate and/or lower substrate are aluminium alloy plate.
The present invention also provides a kind of plasma apparatus, including electrode assembly as described above.
The beneficial effects of the present invention are as follows:
A kind of electrode assembly of plasma apparatus provided by the invention, lower substrate, cooling tube including being in sandwich structure
The lowering ability of road and upper substrate, the cooling pipe is incremented by around by centre, makes the temperature of the intermediate region of electrode assembly
Higher than the temperature of peripheral regions, increase the strength of discharge of intermediate region, improving the electric discharge of electrode assembly intermediate region weak causes to lose
Carve non-uniform problem.
The present invention also provides a kind of plasma apparatus, including electrode assembly as described above, can effectively improve electrode dress
Setting intermediate region electric discharge weak causes to etch non-uniform problem.
Detailed description of the invention
With reference to the accompanying drawing and specific embodiment the invention will be further described, in which:
Fig. 1 is the perspective view of the explosion of the electrode assembly in preferred embodiment of the present invention;
Fig. 2 is the structural schematic diagram of the electrode assembly in preferred embodiment of the present invention;
Fig. 3 is the structural schematic diagram of the cooling pipe in preferred embodiment of the present invention;
Fig. 4 is the structural schematic diagram of the cooling pipe in the embodiment of the present invention 2;
Fig. 5 is the structural schematic diagram of the cooling pipe in the embodiment of the present invention 3.
Specific embodiment
Specific embodiments of the present invention will be further explained below.It should be noted that for these implementations
The explanation of mode is used to help understand the present invention, but and does not constitute a limitation of the invention.In addition, invention described below
Technical characteristic involved in each embodiment can be combined with each other as long as they do not conflict with each other.
Embodiment 1
Referring to Fig. 1 and Fig. 2, a kind of electrode assembly of plasma apparatus, including set gradually from top to bottom lower substrate 3,
Cooling pipe 2 and upper substrate 1, the lower substrate 3, cooling pipe 2 and upper substrate 1 are in sandwich structure, and cooling pipe 2 is located at electricity
Keep cooling effect more abundant inside the device of pole.Wherein the upper substrate 1 and/or lower substrate 3 are aluminium alloy plate, are not only had good
Conductive capability, also have very strong corrosion resistance, the cooling pipe 2 be SUS304 stainless steel cooling pipe road 2 or SUS316
Stainless steel cooling pipe road 2 has high corrosion resistance, there is higher plasticity and toughness under low temperature, room temperature and high temperature.Into one
The lowering ability of step, the cooling pipe 2 is incremented by around by centre, and electrode assembly medium temperature is made to be higher than ambient temperature, is increased
The strength of discharge of big intermediate region, improves that the electric discharge of electrode assembly intermediate region is weak to be caused to etch non-uniform problem.
Referring to Fig. 3, the cooling pipe 2 is the pipeline obtained after fermat spiral deformation is straightened, including what is be interconnected
Water inlet pipe 21 and outlet pipe 22, the water inlet pipe 21 and 22 alternate intervals of outlet pipe setting, the water inlet pipe 21 be from periphery to
The rectangular coil pipeline that center extends, the outlet pipe 22 is the rectangular coil pipeline extended around from center.Cooling medium
If condensed water is flowed into from water inlet pipe 21, flowed out through outlet pipe 22, since water inlet pipe 21 and outlet pipe 22 are rectangular coil pipeline,
Therefore closer to intermediate region, the turning of cooling pipe 2 is more, so that intermediate region flow rate of water flow gradually decreases, lowering ability
It gradually decreases, so that the temperature of intermediate region is made to be higher than ambient temperature, and temperature more higher ion electrode discharge ability is stronger, because
This also just improves the strength of discharge of intermediate region, and improving the electric discharge of electrode assembly intermediate region weak causes to etch non-uniform ask
Topic.
Further, the spacing of adjacent water inlet pipe 21 and outlet pipe 22 is gradually reduced from center to periphery two-by-two, on the one hand,
The condensed water of 22 the inside of water inlet pipe 21 and outlet pipe is gradually increased as moving distance increases temperature, so all from four circumferential centers
It is that the higher pipeline of a temperature and the lower pipeline monitor of a temperature are distributed and between the cooling pipe 2 of periphery
The temperature difference is bigger, therefore the spacing for being gradually reduced water inlet pipe 21 and outlet pipe 22 from center to periphery makes water inlet pipe 21 and outlet pipe 22
It is easier to carry out heat exchange, balances the temperature of region;On the other hand, intermediate region and external zones can also be further increased
The temperature difference in domain enhances the strength of discharge of intermediate region.
Further, the same position of the upper substrate 1 and lower substrate 3 is equipped with several through-holes 12, the hollow yin as electrode
Pole participates in glow discharge.
The present invention also provides a kind of plasma apparatus, including electrode assembly described in embodiment 1, can effectively improve electrode
The electric discharge of device intermediate region is weak to be caused to etch non-uniform problem.
Embodiment 2
Referring to Fig. 1 and Fig. 4, a kind of electrode assembly of plasma apparatus, including set gradually from top to bottom lower substrate 3,
The shape of cooling pipe 2 and upper substrate 1, the cooling pipe 2 is consistent with the shape of fermat spiral, and outer ring spacing is closer, in
In the heart away from maximum, from coil to coil increases spacing, i.e., 2 length of cooling pipe that intermediate region per unit area is included will be less than external zones
Domain reduces the heat-sinking capability of intermediate region, therefore the temperature of intermediate region is higher than peripheral region, to improve putting for intermediate region
Electric strength, improving the electric discharge of electrode assembly intermediate region weak causes to etch non-uniform problem.
The present invention also provides a kind of plasma apparatus, including electrode assembly as described in example 2, can effectively improve electrode
The electric discharge of device intermediate region is weak to be caused to etch non-uniform problem.
Embodiment 3
Referring to Fig. 1 and Fig. 5, a kind of electrode assembly of plasma apparatus, including set gradually from top to bottom lower substrate 3,
Cooling pipe 2 and upper substrate 1, the cooling pipe 2 include being symmetrically set and consistent first snake pipe, 23 He of shape
The distribution density of second snake pipe 24, first snake pipe 23 and the second snake pipe 24 gradually increases from centre to both ends
Add, the heat-sinking capability of intermediate region is reduced, therefore the temperature of intermediate region is higher than peripheral region, to improve putting for intermediate region
Electric strength, improving the electric discharge of electrode assembly intermediate region weak causes to etch non-uniform problem.
The present invention also provides a kind of plasma apparatus, including electrode assembly described in embodiment 3, can effectively improve electrode
The electric discharge of device intermediate region is weak to be caused to etch non-uniform problem.
The above, only better embodiment of the invention, but the present invention is not limited to above-described embodiments, as long as
The technical effect of the present invention is achieved by any identical or similar means for it, all should belong to protection scope of the present invention.
Claims (9)
1. a kind of electrode assembly of plasma apparatus, it is characterised in that: including the lower substrate (3), cold set gradually from top to bottom
But the lowering ability of pipeline (2) and upper substrate (1), the cooling pipe (2) is incremented by around by centre.
2. a kind of electrode assembly of plasma apparatus according to claim 1, it is characterised in that: the cooling pipe (2)
Including interconnected water inlet pipe (21) and outlet pipe (22), the water inlet pipe (21) and the setting of outlet pipe (22) alternate intervals,
The water inlet pipe (21) is the rectangular coil pipeline extended from periphery to center, and the outlet pipe (22) is to prolong around from center
The rectangular coil pipeline stretched.
3. a kind of electrode assembly of plasma apparatus according to claim 2, it is characterised in that: the water inlet pipe (21) and
The distance of the alternate intervals of outlet pipe (22) is gradually reduced from center to periphery.
4. a kind of electrode assembly of plasma apparatus according to claim 1, it is characterised in that: the cooling pipe (2)
Shape it is consistent with the shape of fermat spiral.
5. a kind of electrode assembly of plasma apparatus according to claim 1, it is characterised in that: the cooling pipe (2)
Including being symmetrically set and consistent first snake pipe (23) of shape and the second snake pipe (24), first coiled pipe
The distribution density of road (23) and the second snake pipe (24) is gradually increased from centre to both ends.
6. a kind of electrode assembly of plasma apparatus according to claim 1, it is characterised in that: the cooling pipe (2)
For SUS304 stainless steel cooling pipe road (2) or SUS316 stainless steel cooling pipe road (2).
7. a kind of electrode assembly of plasma apparatus according to claim 1, it is characterised in that: the upper substrate (1) and
The same position of lower substrate (3) is equipped with several through-holes (12).
8. a kind of electrode assembly of plasma apparatus according to claim 1, it is characterised in that: the upper substrate (1) and/
Or lower substrate (3) is aluminium alloy plate.
9. a kind of plasma apparatus, it is characterised in that: including electrode assembly a method as claimed in any one of claims 1-8.
Priority Applications (1)
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CN201910261302.7A CN110139458A (en) | 2019-04-02 | 2019-04-02 | A kind of electrode assembly and plasma apparatus of plasma apparatus |
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CN201910261302.7A CN110139458A (en) | 2019-04-02 | 2019-04-02 | A kind of electrode assembly and plasma apparatus of plasma apparatus |
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CN110139458A true CN110139458A (en) | 2019-08-16 |
Family
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CN201910261302.7A Pending CN110139458A (en) | 2019-04-02 | 2019-04-02 | A kind of electrode assembly and plasma apparatus of plasma apparatus |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112048705A (en) * | 2020-08-18 | 2020-12-08 | 上海卫星装备研究所 | Magnetron sputtering target with self-adjusting magnetic field structure, thin film plating device and method |
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JP2009230828A (en) * | 2008-03-25 | 2009-10-08 | Ushio Inc | Apparatus for radiating light |
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2019
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CN112048705A (en) * | 2020-08-18 | 2020-12-08 | 上海卫星装备研究所 | Magnetron sputtering target with self-adjusting magnetic field structure, thin film plating device and method |
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