CN110137304A - A kind of preparation method and solar cell of doped silicon wafer - Google Patents
A kind of preparation method and solar cell of doped silicon wafer Download PDFInfo
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- CN110137304A CN110137304A CN201910361750.4A CN201910361750A CN110137304A CN 110137304 A CN110137304 A CN 110137304A CN 201910361750 A CN201910361750 A CN 201910361750A CN 110137304 A CN110137304 A CN 110137304A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 169
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 169
- 239000010703 silicon Substances 0.000 title claims abstract description 169
- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 48
- 239000013078 crystal Substances 0.000 claims abstract description 40
- 239000000126 substance Substances 0.000 claims abstract description 39
- 238000009792 diffusion process Methods 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 13
- 229910052738 indium Inorganic materials 0.000 claims abstract description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 12
- 150000002500 ions Chemical class 0.000 claims description 44
- 238000010884 ion-beam technique Methods 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical group [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 150000002258 gallium Chemical class 0.000 claims description 3
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 3
- 150000002471 indium Chemical class 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- IGUXCTSQIGAGSV-UHFFFAOYSA-K indium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[In+3] IGUXCTSQIGAGSV-UHFFFAOYSA-K 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910021513 gallium hydroxide Inorganic materials 0.000 claims description 2
- DNUARHPNFXVKEI-UHFFFAOYSA-K gallium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[Ga+3] DNUARHPNFXVKEI-UHFFFAOYSA-K 0.000 claims description 2
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 abstract description 12
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 13
- 229910052796 boron Inorganic materials 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- 239000002210 silicon-based material Substances 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 238000005266 casting Methods 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- DGRIPWYWLYDWDO-UHFFFAOYSA-N [Si][In] Chemical compound [Si][In] DGRIPWYWLYDWDO-UHFFFAOYSA-N 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 3
- 239000013589 supplement Substances 0.000 description 3
- 229910000807 Ga alloy Inorganic materials 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229940044658 gallium nitrate Drugs 0.000 description 2
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 229910000337 indium(III) sulfate Inorganic materials 0.000 description 2
- XGCKLPDYTQRDTR-UHFFFAOYSA-H indium(iii) sulfate Chemical compound [In+3].[In+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XGCKLPDYTQRDTR-UHFFFAOYSA-H 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 1
- 101100409194 Rattus norvegicus Ppargc1b gene Proteins 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000373 gallium sulfate Inorganic materials 0.000 description 1
- SBDRYJMIQMDXRH-UHFFFAOYSA-N gallium;sulfuric acid Chemical compound [Ga].OS(O)(=O)=O SBDRYJMIQMDXRH-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to technical field of solar batteries, specifically disclose the preparation method and solar cell of a kind of doped silicon wafer.The preparation method includes the following steps: to prepare B-doped Polycrystalline Silicon ingot or boron-doping silicon single crystal rod, is sliced, obtains silicon wafer；Before forming P-N junction, doped chemical is mixed into the silicon wafer using ion implanting or thermal diffusion method；And/or after forming P-N junction, in printing process, doped chemical is mixed in Xiang Suoshu silicon wafer, the doped chemical includes at least one in gallium or indium.Preparation method provided by the invention after forming polycrystal silicon ingot or silicon single crystal rod, then is doped silicon wafer, improve the effective rate of utilization of polycrystal silicon ingot or silicon single crystal rod, and inhibit the formation of boron oxygen complex, extend minority carrier lifetime, promotes battery efficiency and battery performance.
Description
Technical field
The present invention relates to the preparation method and the sun of technical field of solar batteries more particularly to a kind of doped silicon wafer electricity
Pond.
Background technique
With gradually exhausting for fossil energy, for solar cell as new energy substitution scheme, use is more and more extensive.Too
Positive electricity pond is the device that the luminous energy of the sun is converted to electric energy.Solar cell generates carrier using photogenic voltage principle, then
Carrier is drawn using electrode, to be conducive to efficiently use electric energy.
Currently, the efficiency decaying 1.5~7% of solar cell made of boron-doping crystal silicon chip in photovoltaic industry, decay journey
Spend doping concentration, oxygen content, battery structure that size depends on boron element.The essential reason that the photo attenuation of battery generates is to mix
In miscellaneous substrate instead of the oxygen atom of position boron atom and polysilicon mid gap state, in the case where light injects, to will form boron oxygen compound
Body.Boron oxygen complex is deep energy level complex centre, can reduce the service life of minority carrier, to reduce the diffusion of minority carrier
Length causes the efficiency of solar cell to reduce, and influences the long-term reliability of battery.
The component light decay situation of current p-type polycrystalline and p-type monocrystalline is more obvious, is mainly shown as the shadow of boron oxygen complex
It rings, causes the popularization of p-type perc battery more difficult.Although the formation of boron oxygen complex can be reduced by doping, however, existing
There is the segregation coefficient in doping techniques due to doped chemical in silicon solution much smaller than boron element, meeting during ingot casting or pull-rod
Cause doped chemical to be unevenly distributed, eventually leads to polycrystal silicon ingot or silicon single crystal rod resistivity distributed pole is uneven, to reduce
The effective rate of utilization of polycrystal silicon ingot or silicon single crystal rod.
Summary of the invention
It is unevenly distributed for doped chemical in existing polysilicon or monocrystalline silicon doping, resistivity is caused to be unevenly distributed, it is more
The effective rate of utilization of crystal silicon ingot or silicon single crystal rod is low and the component of p-type polycrystalline and p-type monocrystalline is influenced by boron oxygen complex
Seriously, the problem for causing light decay situation more obvious, the present invention provide the preparation method and solar cell of a kind of doped silicon wafer.
To achieve the above object of the invention, the embodiment of the present invention uses the following technical solution:
A kind of preparation method of doped silicon wafer, includes the following steps:
(1) B-doped Polycrystalline Silicon ingot or boron-doping silicon single crystal rod that preparation resistance rate is 0.5 Ω cm-10 Ω cm, and will be described
Polycrystal silicon ingot or silicon single crystal rod slice, obtain silicon wafer；
(2) before forming P-N junction, place is doped to the back side of the silicon wafer using ion implanting or thermal diffusion method
Reason mixes doped chemical, doping depth≤0.1mm；And/or
After forming P-N junction, in printing process, processing is doped to the back side of the silicon wafer, mixes doped chemical,
Doping depth≤0.1mm,
The doped chemical includes at least one in gallium or indium, and atomic volume of the doped chemical in silicon wafer is dense
Degree is 1.0 × 1014-1.0×1017atoms/cm3。
Since the segregation coefficient of gallium element or phosphide element in silicon solution is much smaller than boron element, during ingot casting or pull-rod
It will lead to gallium or phosphide element be unevenly distributed, eventually lead to polycrystal silicon ingot or silicon single crystal rod resistivity distributed pole is uneven, to drop
The low effective rate of utilization of polycrystal silicon ingot or silicon single crystal rod, and influence silicon wafer performance.And in the application formed polycrystal silicon ingot or
After silicon single crystal rod, then silicon wafer is doped, can to avoid being unevenly distributed due to doped chemical caused by polycrystal silicon ingot or
The non-uniform phenomenon of silicon single crystal rod resistivity distributed pole, effectively improves the effective rate of utilization of polycrystal silicon ingot or silicon single crystal rod.This Shen
Please in the resistivity of control polycrystal silicon ingot or silicon single crystal rod be 0.5 Ω cm--10 Ω cm, higher than conventional polycrystal silicon ingot or
The resistivity of silicon single crystal rod is to do for subsequent doping reserved, and the resistivity of obtained silicon wafer reaches after guaranteeing incorporation doped chemical
To conventional levels, meet the requirements.It however, above-mentioned doping purpose is not intended to form P-N junction, but is to form P-N junction
It is preceding or after forming P-N junction, silicon wafer is doped, is the supplement adulterated to boron element during ingot casting or pull-rod, by mixing
Enter gallium element or phosphide element and boron is co-doped with to inhibit boron oxygen complex to generate, improves photo attenuation phenomenon.
Specifically, in step (2), before forming P-N junction, using ion implanting or thermal diffusion method to the silicon wafer
The back side is doped processing, mixes doped chemical, is co-doped with gallium element or phosphide element with boron, then, using phosphorus diffusion or ion
Injection is doped front side of silicon wafer, forms P-N junction；And/or after forming P-N junction, that is, use phosphorus diffusion or ion implanting pair
Front side of silicon wafer is doped to form P-N junction after, then in printing process, processing is doped to the back side of the silicon wafer, mixed
Doped chemical is co-doped with gallium element or phosphide element with boron, avoids resistivity point caused by being unevenly distributed due to doped chemical
The extremely non-uniform phenomenon of cloth, effectively improves the effective rate of utilization of polycrystal silicon ingot or silicon single crystal rod, and control doped chemical in silicon wafer
In atomic volume concentration, inhibit boron oxygen complex generate, improve photo attenuation phenomenon.
Further, the doped chemical is selected from the simple substance containing gallium element or phosphide element, alloy or compound, wherein
Alloy is indium gallium alloy, gallium silicon alloy or gallium silicon alloy.
Further, the compound containing gallium element is gallium oxide, gallium nitride, gallium hydroxide or gallium salt, and gallium salt is such as
Gallium chloride, gallium nitrate, gallium sulfate etc.；The compound containing phosphide element be indium oxide, indium nitride, indium hydroxide or indium salts,
Indium salts such as indium nitrate, indium sulfate.
Further, P-N junction is formed using diffusion method or ion implantation, i.e., gallium is mixed using ion implanting or thermal diffusion
After element or phosphide element, continue to form P-N junction using diffusion method or ion implantation.
Further, it in step (2), after injecting doped chemical into the silicon wafer using ion injection method, carries out high
Temperature sintering, the sintering temperature are 750-950 DEG C, to a supplement for carrying out boron element doping during ingot casting, form P-type silicon
Piece, inhibits the formation of boron oxygen complex, and improves the resistivity of silicon wafer.
Further, the ion injection method are as follows: the material containing doped chemical is put into evaporator, is heated to gas
State is passed into ion source, and by RF radio frequency by doped chemical atomic excitation at ion, the ion obtains energy by electric field
Ion beam current is formed, the silicon wafer is delivered to below the ion beam current, ion implanting is completed, realizes mixing for doped chemical
Enter, wherein the material containing doped chemical is the simple substance containing gallium element or phosphide element, alloy or compound.
Further, in printing process, the simple substance containing gallium element or phosphide element is mixed in aluminium paste, is carried on the back in second
In the printing process of face Al-BSF, doped chemical is mixed in Xiang Suoshu silicon wafer, inhibits the formation of boron oxygen complex, and improves silicon ingot
Or the effective rate of utilization of crystal bar.
Further, the resistivity of silicon wafer obtained in step (2) is 0.3 Ω cm-5 Ω cm.
The present invention also provides a kind of solar cell, the silicon substrate of the solar cell uses any of the above-described kind of preparation method system
Standby silicon wafer.
Compared with the existing technology, using technical solution of the present invention, B-doped Polycrystalline Silicon ingot or boron-doping silicon single crystal rod are being formed
Afterwards, slice obtains corresponding silicon wafer, before forming P-N junction, is injected using ion implanting or thermal diffusion method into the silicon wafer
Gallium or Ge-doped element, or after forming P-N junction, in printing process, gallium or Ge-doped element are mixed in Xiang Suoshu silicon wafer, is kept away
Exempt from polycrystal silicon ingot or silicon single crystal rod resistivity point caused by being unevenly distributed during ingot casting or pull-rod due to doped chemical
The extremely non-uniform phenomenon of cloth, effectively improves the effective rate of utilization of polycrystal silicon ingot or silicon single crystal rod.In addition, incorporation gallium or indium doping member
Element is the supplement adulterated to boron element during ingot casting or pull-rod, and the formation to inhibit boron oxygen complex is co-doped with boron element, is prolonged
Long minority carrier lifetime improves battery photo attenuation phenomenon, promotes battery efficiency and battery performance.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
Limit the present invention.
Embodiment 1
A kind of preparation method of doped silicon wafer, includes the following steps:
(1) polycrystalline silicon material, borosilicate alloy are added in crucible, use polycrystalline ingot furnace preparation resistivity for 0.5 Ω
The B-doped Polycrystalline Silicon ingot of cm, and the polycrystal silicon ingot is sliced, obtain silicon wafer；
(2) before forming P-N junction, gallium nitride is put into evaporator, gaseous state is heated to, be passed into horizontal ion injection
In the ion source of machine, by RF radio frequency gallium atomic excitation at ion, gallium ion obtains energy by electric field and forms ion beam current, will
Above-mentioned silicon wafer is delivered to below the ion beam current, is completed ion implanting at the back side of silicon wafer and is then sintered in 750 DEG C
10min obtains the p-type that resistivity is 0.3 Ω cm and mixes gallium silicon wafer, doping depth 0.05mm, wherein gallium element is in silicon wafer
Atomic volume concentration is 1.0 × 1014atoms/cm3.Then, it is doped using front of the phosphorus diffusion to silicon wafer, forms P-N
Knot.
Embodiment 2
A kind of preparation method of doped silicon wafer, includes the following steps:
(1) monocrystalline silicon material, borosilicate alloy are added in crucible, single crystal growing furnace is used to prepare resistivity mixing for 10 Ω cm
Boron single crystal silicon rod, and the silicon single crystal rod is sliced, obtain silicon wafer；
(2) before forming P-N junction, gallium oxide and indium oxide (the two molar ratio is 1:1) is put into evaporator, are heated to
Gaseous state is passed into the ion source of horizontal ion implanter, is excited into ion, ion by RF radio frequency gallium atom, phosphide atom
Energy is obtained by electric field and forms ion beam current, and above-mentioned silicon wafer is delivered to below the ion beam current, it is complete at the back side of silicon wafer
At ion implanting, then, it is sintered 5s in 800 DEG C, obtains the p-type that resistivity is 5 Ω cm and mix gallium indium silicon wafer, doping depth
0.06mm, wherein the atomic volume concentration of gallium and phosphide element in silicon wafer is 1.0 × 1015atoms/cm3.Then, using ion
Injection method is doped the front of silicon wafer, mixes P elements, forms P-N junction.
Embodiment 3
A kind of preparation method of doped silicon wafer, includes the following steps:
(1) silicon material, borosilicate alloy are added in crucible, use single crystal growing furnace preparation resistivity for the boron-doping list of 8 Ω cm
Crystalline silicon rod, and the silicon single crystal rod is sliced, obtain silicon wafer；
(2) before forming P-N junction, indium nitride is put into evaporator, gaseous state is heated to, be passed into horizontal ion injection
In the ion source of machine, ion is excited by RF radio frequency phosphide atom, ion obtains energy by electric field and forms ion beam current, will be upper
It states silicon wafer to be delivered to below the ion beam current, completes ion implanting at the back side of silicon wafer and be then sintered in 800 DEG C
5min obtains the indium-doped silicon wafer of p-type that resistivity is 3 Ω cm, doping depth 0.07mm, wherein original of the phosphide element in silicon wafer
Sub-volume concentration is 1.0 × 1016atoms/cm3.Then, it is doped using front of the ion implantation to silicon wafer, mixes phosphorus
Element forms P-N junction.
Embodiment 4
A kind of preparation method of doped silicon wafer, includes the following steps:
(1) silicon material, borosilicate alloy are added in crucible, use single crystal growing furnace preparation resistivity for the boron-doping list of 5 Ω cm
Crystalline silicon rod, and the silicon single crystal rod is sliced, obtain silicon wafer；
(2) before forming P-N junction, using gallium nitride as gallium source, using thermal diffusion method, Gallium diffusion is carried out at the back side of silicon wafer,
It obtains the p-type that resistivity is 3 Ω cm and mixes gallium silicon wafer, doping depth 0.06mm, wherein atomic volume of the gallium element in silicon wafer
Concentration is 1.0 × 1015atoms/cm3.Then, it is doped using front of the ion implantation to silicon wafer, mixes P elements, shape
At P-N junction.
Embodiment 5
A kind of preparation method of doped silicon wafer, includes the following steps:
(1) monocrystalline silicon material, borosilicate alloy are added in crucible, single crystal growing furnace is used to prepare resistivity mixing for 3 Ω cm
Boron single crystal silicon rod, and the silicon single crystal rod is sliced, obtain silicon wafer；
(2) before forming P-N junction, using indium hydroxide as indium source, using thermal diffusion method, indium expansion is carried out at the back side of silicon wafer
It dissipates, obtains the indium-doped silicon wafer of p-type that resistivity is 1 Ω cm, doping depth 0.07mm, wherein atom of the phosphide element in silicon wafer
Volumetric concentration is 1.0 × 1015atoms/cm3.Then, it is doped using front of the phosphorus diffusion to silicon wafer, forms P-N junction.
Embodiment 6
A kind of preparation method of doped silicon wafer, includes the following steps:
(1) polycrystalline silicon material, borosilicate alloy are added in crucible, use polycrystalline ingot furnace preparation resistivity for 7 Ω cm
B-doped Polycrystalline Silicon ingot, and the polycrystal silicon ingot is sliced, obtains silicon wafer；
(2) after forming P-N junction using phosphorus diffusion, in printing process, after the printing for completing first of back side silver electrode,
Gallium simple substance is mixed in aluminium paste, and gallium element is mixed in Xiang Suoshu silicon wafer in the printing process of second back side Al-BSF, then,
After the printing of continuation third road front silver electrode, drying and sintering, resistivity is obtained as 5 Ω cm and mixes gallium silicon wafer, doping
Depth 0.05mm, wherein atomic volume concentration of the phosphide element in silicon wafer is 1.0 × 1014atoms/cm3。
Embodiment 7
A kind of preparation method of doped silicon wafer, includes the following steps:
(1) polycrystalline silicon material, borosilicate alloy are added in crucible, use polycrystalline ingot furnace preparation resistivity for 6 Ω cm
B-doped Polycrystalline Silicon ingot, and the polycrystal silicon ingot is sliced, obtains silicon wafer；
(2) before forming P-N junction, gallium nitrate is put into evaporator, gaseous state is heated to, be passed into horizontal ion injection
In the ion source of machine, by RF radio frequency gallium atomic excitation at ion, gallium ion obtains energy by electric field and forms ion beam current, will
Above-mentioned silicon wafer is delivered to below the ion beam current, is completed ion implanting at the back side of silicon wafer and is then sintered in 750 DEG C
10min；It is subsequent, continue to carry out phosphorus doping using front of the ion implanting to silicon wafer, forms P-N junction；And then in printing process
In, after the printing for completing first of back side silver electrode, indium gallium alloy is mixed in aluminium paste, in the printing of second back side Al-BSF
In the process, indium gallium element is mixed in Xiang Suoshu silicon wafer, then, continues the printing of third road front silver electrode, drying and sintering
Afterwards, it obtains resistivity and mixes gallium indium silicon wafer, doping depth 0.08mm for 3 Ω cm, wherein the original of gallium, phosphide element in silicon wafer
Sub-volume concentration is 1.0 × 1017atoms/cm3。
Embodiment 8
A kind of preparation method of doped silicon wafer, includes the following steps:
(1) silicon material, borosilicate alloy are added in crucible, use single crystal growing furnace preparation resistivity for the boron-doping list of 10 Ω cm
Crystalline silicon rod, and the silicon single crystal rod is sliced, obtain silicon wafer；
(2) indium sulfate is put into evaporator, is heated to gaseous state, be passed into the ion source of horizontal ion implanter,
It is excited into ion by RF radio frequency phosphide atom, ion obtains energy by electric field and forms ion beam current, above-mentioned silicon wafer is delivered to
Below the ion beam current, ion implanting is completed at the back side of silicon wafer, is sintered 5min in 950 DEG C；Then, it is with gallium chloride
Gallium source carries out Gallium diffusion at the back side of silicon wafer using thermal diffusion method again, obtains the indium-doped gallium silicon wafer of p-type, doping depth
0.09mm, then using phosphorus diffusion formed P-N junction, wherein the atomic volume concentration of gallium, phosphide element in silicon wafer be 1.0 ×
1016atoms/cm3。
Embodiment 9
A kind of preparation method of doped silicon wafer, includes the following steps:
(1) silicon material, borosilicate alloy are added in crucible, use single crystal growing furnace preparation resistivity for the boron-doping of 5.2 Ω cm
Silicon single crystal rod, and the silicon single crystal rod is sliced, obtain silicon wafer；
(2) before phosphorus diffusion, that is, before forming P-N junction, using gallium chloride as gallium source, using thermal diffusion method, in silicon wafer
The back side carries out Gallium diffusion, then, carries out phosphorus diffusion in the front of silicon wafer, forms P-N junction；Then, in printing process, the is completed
After the printing of one of back side silver electrode, indium simple substance is mixed in aluminium paste, in the printing process of second back side Al-BSF, to institute
It states and mixes phosphide element in silicon wafer, then, continue the printing of third road front silver electrode, drying obtains resistivity with after sintering
Gallium indium silicon wafer, doping depth 0.08mm are mixed for 2.5 Ω cm, wherein the atomic volume concentration of gallium, phosphide element in silicon wafer is
1.0×1017atoms/cm3。
Obtained silicon wafer can be used for solar cell in above-described embodiment, promote battery efficiency and battery performance.
The preparation method of doped silicon wafer provided in an embodiment of the present invention is forming B-doped Polycrystalline Silicon ingot or boron-doping silicon single crystal rod
Afterwards, then to silicon wafer gallium and/or indium doping are carried out, effectively improves the effective rate of utilization of polycrystal silicon ingot or silicon single crystal rod, makes
Silicon chip resistivity is evenly distributed, and inhibits the formation of boron oxygen complex by control gallium, atomic volume concentration of the indium in silicon wafer,
Extend minority carrier lifetime, promotes battery efficiency and battery performance.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modification, equivalent replacement or improvement etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (9)
1. a kind of preparation method of doped silicon wafer, characterized by the following steps:
(1) B-doped Polycrystalline Silicon ingot or boron-doping silicon single crystal rod that preparation resistivity is 0.5 Ω cm-10 Ω cm, and will be described more
Crystal silicon ingot or silicon single crystal rod slice, obtain silicon wafer；
(2) before forming P-N junction, processing is doped to the back side of the silicon wafer using ion implanting or thermal diffusion method, is mixed
Enter doped chemical, doping depth≤0.1mm；And/or
After forming P-N junction, in printing process, processing is doped to the back side of the silicon wafer, mixes doped chemical, doping
Depth≤0.1mm,
The doped chemical includes at least one in gallium or indium, and atomic volume concentration of the doped chemical in silicon wafer is
1.0×1014-1.0×1017atoms/cm3。
2. the preparation method of doped silicon wafer as described in claim 1, it is characterised in that: the doped chemical is selected from containing gallium member
Simple substance, alloy or the compound of element or phosphide element.
3. the preparation method of doped silicon wafer as described in claim 1, it is characterised in that: the compound containing gallium element is
Gallium oxide, gallium nitride, gallium hydroxide or gallium salt；The compound containing phosphide element be indium oxide, indium nitride, indium hydroxide or
Indium salts.
4. the preparation method of doped silicon wafer as described in claim 1, it is characterised in that: use diffusion method or ion implantation shape
At P-N junction.
5. the preparation method of doped silicon wafer as described in claim 1, it is characterised in that: in step (2), using ion implanting side
After injecting doped chemical in silicon wafer described in normal direction, high temperature sintering is carried out, the sintering temperature is 750-950 DEG C.
6. the preparation method of doped silicon wafer as described in claim 1, it is characterised in that: the ion injection method are as follows: will contain
There is the material of doped chemical to be put into evaporator, be heated to gaseous state, is passed into ion source, it is by RF radio frequency that doped chemical is former
Son is excited into ion, and the ion obtains energy by electric field and forms ion beam current, and the silicon wafer is delivered to the ion beam
The side of flowing down completes ion implanting.
7. the preparation method of doped silicon wafer as described in claim 1, it is characterised in that: in printing process, mixed in aluminium paste
Enter the simple substance containing gallium element or phosphide element, in the printing process of second back side Al-BSF, is mixed in Xiang Suoshu silicon wafer
Miscellaneous element.
8. the preparation method of doped silicon wafer as described in claim 1, it is characterised in that: the electricity of silicon wafer obtained in step (2)
Resistance rate is 0.3 Ω cm-5 Ω cm.
9. a kind of solar cell, it is characterised in that: the silicon substrate of the solar cell is using any one of claim 1 to 8 institute
The silicon wafer for the preparation method preparation stated.
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