CN110137262A - A kind of two layer metal oxide heterojunction semiconductor thin film transistor (TFT) and preparation method - Google Patents
A kind of two layer metal oxide heterojunction semiconductor thin film transistor (TFT) and preparation method Download PDFInfo
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- CN110137262A CN110137262A CN201910291851.9A CN201910291851A CN110137262A CN 110137262 A CN110137262 A CN 110137262A CN 201910291851 A CN201910291851 A CN 201910291851A CN 110137262 A CN110137262 A CN 110137262A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 105
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 88
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 82
- 238000002360 preparation method Methods 0.000 title claims abstract description 48
- 239000010409 thin film Substances 0.000 title claims abstract description 34
- 238000009841 combustion method Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 96
- 239000000243 solution Substances 0.000 claims description 74
- 239000002243 precursor Substances 0.000 claims description 62
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 61
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 54
- 239000004202 carbamide Substances 0.000 claims description 33
- 239000011787 zinc oxide Substances 0.000 claims description 31
- 150000001340 alkali metals Chemical class 0.000 claims description 30
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 claims description 30
- 229910052783 alkali metal Inorganic materials 0.000 claims description 28
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 24
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 22
- 229910052725 zinc Inorganic materials 0.000 claims description 22
- 239000011701 zinc Substances 0.000 claims description 22
- 230000003647 oxidation Effects 0.000 claims description 21
- 238000007254 oxidation reaction Methods 0.000 claims description 21
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 claims description 20
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 17
- 239000007864 aqueous solution Substances 0.000 claims description 17
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 17
- 238000012545 processing Methods 0.000 claims description 16
- 206010001497 Agitation Diseases 0.000 claims description 13
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 13
- 238000013019 agitation Methods 0.000 claims description 13
- 229910021529 ammonia Inorganic materials 0.000 claims description 12
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 11
- 239000008367 deionised water Substances 0.000 claims description 11
- 229910021641 deionized water Inorganic materials 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical group [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 238000001914 filtration Methods 0.000 claims description 10
- 229940044658 gallium nitrate Drugs 0.000 claims description 10
- 238000007641 inkjet printing Methods 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 10
- 238000007650 screen-printing Methods 0.000 claims description 10
- 238000004528 spin coating Methods 0.000 claims description 10
- 238000010025 steaming Methods 0.000 claims description 10
- 238000009210 therapy by ultrasound Methods 0.000 claims description 10
- 238000007747 plating Methods 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 claims description 8
- 238000005566 electron beam evaporation Methods 0.000 claims description 8
- DFCYEXJMCFQPPA-UHFFFAOYSA-N scandium(3+);trinitrate Chemical compound [Sc+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O DFCYEXJMCFQPPA-UHFFFAOYSA-N 0.000 claims description 8
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 7
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 7
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- -1 ZnO metal oxide Chemical class 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052792 caesium Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910052700 potassium Inorganic materials 0.000 claims description 6
- 229910052701 rubidium Inorganic materials 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 5
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052730 francium Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- CPRMKOQKXYSDML-UHFFFAOYSA-M rubidium hydroxide Chemical compound [OH-].[Rb+] CPRMKOQKXYSDML-UHFFFAOYSA-M 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 125000000218 acetic acid group Chemical group C(C)(=O)* 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 239000006193 liquid solution Substances 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 claims description 2
- CWQSNJSRIUPVNR-UHFFFAOYSA-M [OH-].[Fr+] Chemical compound [OH-].[Fr+] CWQSNJSRIUPVNR-UHFFFAOYSA-M 0.000 claims description 2
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 2
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims 1
- 230000000536 complexating effect Effects 0.000 claims 1
- 150000002927 oxygen compounds Chemical class 0.000 claims 1
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 2
- IWLXWEWGQZEKGZ-UHFFFAOYSA-N azane;zinc Chemical compound N.[Zn] IWLXWEWGQZEKGZ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000012687 aluminium precursor Substances 0.000 description 1
- ZZCONUBOESKGOK-UHFFFAOYSA-N aluminum;trinitrate;hydrate Chemical compound O.[Al+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O ZZCONUBOESKGOK-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- YZZFBYAKINKKFM-UHFFFAOYSA-N dinitrooxyindiganyl nitrate;hydrate Chemical compound O.[In+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YZZFBYAKINKKFM-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011858 nanopowder Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Abstract
The invention discloses a kind of two layer metal oxide heterojunction semiconductor thin film transistor (TFT) and preparation method, including insulating substrate, gate electrode, gate insulating layer, two layer metal oxide heterojunction semiconductor, source electrode and drain electrodes；Gate electrode, gate insulating layer, two layer metal oxide heterojunction semiconductor are disposed in insulating substrate；Source electrode and drain electrode is provided on two layer metal oxide heterojunction semiconductor top layer；Two layer metal oxide heterojunction semiconductor includes first layer metal oxide semiconductor layer and second layer metal oxide semiconductor layer；Specific steps include: the cleaning treatment of a) insulating substrate；B) gate electrode is prepared；C) it is surface-treated；D) solution combustion method prepares gate insulating layer；E) solution combustion method prepares first layer metal oxide semiconductor layer；F) solution combustion method prepares second layer metal oxide semiconductor layer；G) preparation of source electrode and drain electrode.The present invention is low in cost, simple process, the thin film transistor (TFT) of safety and environmental protection.
Description
Technical field
The present invention relates to technical field of microelectronic devices, and in particular to a kind of solution combustion method two layer metal oxide is partly led
Bulk heterojunction thin film transistor (TFT) and preparation method.
Background technique
In recent years, metal oxide semiconductor films transistor (MOTFT) is because it is in FPD, flexible electronic, sensing
The potentiality of device etc. receive extensive concern and research both at home and abroad.However INVENTIONConventional metal-oxide thin film transistor (TFT) mainly by
Pulse laser deposition, atomic layer deposition, the high vacuum method preparation such as magnetron sputtering, at high cost, preparation process is complicated and can not transport
It is produced for large area.The metal oxide thin-film transistor of solwution method preparation is due to preparing work with lower production cost
The advantages that skill does not depend on high-vacuum equipment simply, higher electric property, therefore, it has become recent domestic thin film transistor (TFT)s
The research hotspot in field.But solwution method prepares metal oxide thin-film transistor and is also faced with following obstacle :(a) traditional handicraft
In be often used SiO2As insulating layer material, cause operating voltage usually all in 10V or more.Higher operating voltage improves it
Device power consumption limits and is more widely applied field.(b) in order to form functional semiconductor layer, needed in preparation process compared with
High annealing temperature (> 400 DEG C), energy consumption is higher and makes it that can not apply to Pi, in the flexible substrates such as PET.
Summary of the invention
Object of the present invention is to: a kind of low in cost, simple process is provided, the solution combustion method of safety and environmental protection prepares double-deck
Metal-oxide semiconductor (MOS) hetero-junction thin-film transistor and preparation method.
The technical scheme is that a kind of two layer metal oxide heterojunction semiconductor thin film transistor (TFT), including insulation
Substrate, gate electrode, gate insulating layer, two layer metal oxide heterojunction semiconductor, source electrode and drain electrode；The insulating substrate
Positioned at the bottom, gate electrode, gate insulating layer, two layer metal oxide are disposed on the insulating substrate from bottom to top
Heterojunction semiconductor；Source electrode and drain electrode is provided on the two layer metal oxide heterojunction semiconductor top layer；It is described double
Layer metal-oxide semiconductor (MOS) hetero-junctions includes the first layer metal oxidation formed on gate insulating layer using solution combustion method
Object semiconductor layer and the second layer metal oxide formed on first layer metal oxide semiconductor layer using solution combustion method
Semiconductor layer；Two dimension is formd between the first layer metal oxide semiconductor layer and second layer metal oxide semiconductor layer
Electron gas.
Preferably, the first layer metal oxide semiconductor layer and second layer metal oxide semiconductor layer are solution combustion
The alkali metal of burning method preparation mixes ZnO metal oxide semiconductor layer or In2O3Metal oxide semiconductor layer.
Preferably, the gate insulating layer is the gallium oxide of solution combustion method preparation, hafnium oxide, aluminium oxide or scandium oxide grid
Pole insulating layer.
Preferably, hot steaming degree or electricity are carried out using ink jet printing, photoetching, silk-screen printing or using the exposure mask of certain pattern
The method of beamlet vapor deposition forms gate electrode on the upper surface of insulating substrate；Using silk-screen printing, photoetching or makes ink jet printing
The method of hot steaming degree or electron beam evaporation plating is carried out with the exposure mask of certain pattern to tie point in two layer metal oxide heterogeneous semiconductor
It Xing Cheng not source electrode and drain electrode.
A kind of preparation method of two layer metal oxide heterojunction semiconductor thin film transistor (TFT), specific steps include:
A) cleaning treatment of insulating substrate: being first cleaned by ultrasonic flexible substrate 1-30min with acetone, then is cleaned with EtOH Sonicate soft
Property substrate 1-30min, last deionized water rinses, is dried with nitrogen；
B) prepare gate electrode: using ink jet printing, photoetching, silk-screen printing or the exposure mask using certain pattern carry out hot steaming degree or
The method of electron beam evaporation plating forms gate electrode on the upper surface of insulating substrate；
C) it is surface-treated: the surface clear water that gate electrode and insulating substrate carry out 0.1-1 hours is handled, processing mode is dark purple
Outer light, UV ozone, one of oxygen plasma or the processing of air plasma surface clear water；
D) solution combustion method prepares gate insulating layer: with the revolving speed spincoating insulating layer solution combustion method forerunner of 1000-6000RPM
Body source, then through 100-150 DEG C, pre-anneal treatment in -1 hour 10 minutes air, most laggard 1-60 minutes of deep ultraviolet light
Processing or UV ozone handle to obtain gate insulating layer；The insulating layer solution combustion method precursor source is aluminum nitrate, gallium nitrate
Or the 2 mercapto ethanol solution or aqueous solution of scandium nitrate；Contain urea or levulinic in the aluminum nitrate, gallium nitrate or scandium nitrate
Ketone；The molar ratio of one of one of the urea or acetylacetone,2,4-pentanedione and aluminum nitrate, gallium nitrate or scandium nitrate is 0.5-3:
1；
E) solution combustion method prepares first layer metal oxide semiconductor layer: with 1000-6000RPM's on gate insulating layer
Revolving speed spin coating semiconductor layer solution combustion method precursor source, then through 100-150 DEG C, preannealing in -1 hour 10 minutes air
Processing, most laggard 1-60 minutes of deep ultraviolet light or UV ozone handle to obtain first layer metal oxidation semiconductor layer；Semiconductor
Layer solution combustion method precursor source is that alkali metal mixes ZnO precursor source or In2O3Precursor source；Before the alkali metal mixes ZnO
Drive the alkali metal that body source is 0.1-20% molar ratio, the ammonia spirit for aoxidizing zinc complex and ammonium nitrate；The alkali metal is Li,
One of Na, K, Rb, Cs, Fr；Contain urea or acetylacetone,2,4-pentanedione in the oxidation zinc complex；The urea or acetyl
The molar ratio of acetone and oxidation zinc complex is 0.5-3: 1, and the ammonia spirit concentration for aoxidizing zinc complex is 0.05-3 moles dense
Degree；The molar ratio of the ammonium nitrate and oxidation zinc complex is 0.5-3: 1；The In2O3Precursor source is 0.05-3 moles dense
The 2 mercapto ethanol solution or aqueous solution of the indium nitrate of degree；Contain urea or acetylacetone,2,4-pentanedione in the indium nitrate；The urea or
The molar ratio of acetylacetone,2,4-pentanedione and indium nitrate is 0.5-3: 1；
F) solution combustion method prepares second layer metal oxide semiconductor layer: first layer metal oxidation semiconductor layer on
The revolving speed spin coating semiconductor layer solution combustion method precursor source of 1000-6000RPM, then through 100-150 DEG C, -1 hour 10 minutes
Air in pre-anneal treatment, the processing of most laggard 1-60 minutes of deep ultraviolet light or UV ozone handle to obtain second layer metal oxygen
Change semiconductor layer；Semiconductor layer solution combustion method precursor source is that alkali metal mixes ZnO precursor source or In2O3Precursor source；Half
Conductor layer solution combustion method precursor source is that alkali metal mixes ZnO precursor source or In2O3Precursor source；The alkali metal mixes
ZnO precursor source is the alkali metal of 0.1-20% molar ratio, the ammonia spirit for aoxidizing zinc complex and ammonium nitrate；The alkali metal
For Li, Na, K, Rb, Cs, one of Fr；Contain urea or acetylacetone,2,4-pentanedione in the oxidation zinc complex；The urea
Or acetylacetone,2,4-pentanedione is 0.5-3: 1 with the molar ratio for aoxidizing zinc complex, the ammonia spirit concentration for aoxidizing zinc complex is 0.05-3
Molar concentration；The molar ratio of the ammonium nitrate and oxidation zinc complex is 0.5-3: 1；The In2O3Precursor source is 0.05-3
The 2 mercapto ethanol solution or aqueous solution of the indium nitrate of molar concentration；Contain urea or acetylacetone,2,4-pentanedione in the indium nitrate；It is described
The molar ratio of urea or acetylacetone,2,4-pentanedione and indium nitrate is 0.5-3: 1；
G) silk-screen printing, photoetching, ink jet printing, or the exposure mask using certain pattern the preparation of source electrode and drain electrode: are used
The method for carrying out hot steaming degree or electron beam evaporation plating is respectively formed source electrode and drain electrode on second layer metal oxidation semiconductor layer.
Preferably, the gallium oxide aqueous solution precursor source preparation step includes: by the gallium nitrate of 0.05-3 molar concentration
And deionized water or 2 mercapto ethanol solution or water are dissolved in for 0.5-3: 1 urea or acetylacetone,2,4-pentanedione with gallium nitrate molar ratio
In solution, then carry out 0.5-24 hours magnetic agitations or ultrasonic treatment forms the gallium oxide precursor solution of certain concentration, so
Filtering is stand-by afterwards.
Preferably, the oxidation aluminum water solution precursor source preparation step includes: by the aluminum nitrate of 0.05-3 molar concentration
And be dissolved in deionized water or 2 mercapto ethanol solution with nitric acid al mole ratio for 0.5-3: 1 urea or acetylacetone,2,4-pentanedione, then
Carry out 0.5-24 hours magnetic agitations or ultrasonic treatment form the aluminum oxide precursor liquid solution of certain concentration, then filter to
With.
Preferably, the scandium oxide aqueous solution precursor source preparation step includes: by the scandium nitrate of 0.05-3 molar concentration
And be dissolved in deionized water or 2 mercapto ethanol solution with scandium nitrate molar ratio for 0.5-3: 1 urea or acetylacetone,2,4-pentanedione, then
Carry out 0.5-24 hours magnetic agitations or ultrasonic treatment form the scandium oxide precursor solution of certain concentration, then filter to
With.
Preferably, the In2O3Precursor source is the indium nitrate aqueous solution of 0.05-3 molar concentration；The In2O3Presoma
Source preparation step include: by the indium nitrate of 0.05-3 molar concentration and with indium nitrate molar ratio be 0.5 ~ 3: 1 urea or second
Acyl acetone is dissolved in deionized water or 2 mercapto ethanol solution, then carries out 0.5-24 hours magnetic agitations or ultrasonic treatment formation
The indium nitrate precursor solution of certain concentration, then filtering is stand-by.
Preferably, the alkali metal mixes alkali metal/zinc oxide that ZnO aqueous solution precursor source is 0.1-20% molar ratio
The ammonia spirit of complex compound, the ammonia spirit concentration for aoxidizing zinc complex is 0.05-3 molar concentration, and the alkali metal is selected from Li,
One of Na, K, Rb, Cs, Fr；It includes: by 0.05- that the alkali metal, which mixes ZnO aqueous solution precursor source preparation step,
The zinc oxide nano powder of 1 molar concentration is dissolved in the ammonium hydroxide of 10-40% concentration, then by the lithium hydroxide of 0.1-20% molar ratio,
Potassium hydroxide, sodium hydroxide, rubidium hydroxide, cesium hydroxide, one or more of hydroxide francium are with zinc oxide molar ratio
0.5 ~ 3: 1 urea or acetylacetone,2,4-pentanedione, and the ammonium nitrate for being 0.5 ~ 3: 1 with zinc oxide molar ratio are added thereto；Then into
0.5-24 hours magnetic agitations of row or ultrasonic treatment form alkali metal and mix ZnO precursor source solution, and filtering is stand-by later.
The invention has the advantages that
1, two layer metal oxide heterojunction semiconductor can be by the preparation of hetero-junctions in double layer of metal oxide semiconductor layer
In form two-dimensional electron gas, greatly improve the electric property of thin film transistor (TFT)；
2, solution combustion method insulating layer preparation method can provide high capacitive dielectric layer value and high quality insulating layer it is thin
Film；
3, by the redox reaction heat release in precursor solution in treatment process, preparation temperature is greatly reduced, is prepared
Operating voltage and hysteresis at low cost and that reduce thin film transistor (TFT), highest annealing temperature are no more than 150 DEG C, can be applied to
In the flexible substrates such as Pi；
4, the gate insulating layer that high quality is prepared under low temperature, can provide high capacitance and extremely low leakage current, compare
In traditional SiO2Gate insulating layer greatly improves the electric property of thin film transistor (TFT), reduces operating voltage.
Detailed description of the invention
The invention will be further described with reference to the accompanying drawings and embodiments:
A kind of structural schematic diagram of two layer metal oxide heterojunction semiconductor thin film transistor (TFT) described in Fig. 1 this case；
A kind of transfer characteristic curve figure of two layer metal oxide heterojunction semiconductor thin film transistor (TFT) described in Fig. 2 this case；
Wherein: 11: insulating substrate, 12: gate electrode, 13: gate insulating layer, 14: two layer metal oxide semiconductor layer, 14
(a): first layer metal oxide semiconductor layer, 14(b): second layer metal oxide semiconductor layer, 14(c): two-dimensional electron gas,
15: source electrode, 16: drain electrode.
Specific embodiment
Embodiment:
As shown in attached drawing 1-2, a kind of two layer metal oxide heterojunction semiconductor thin film transistor (TFT), including insulating substrate 11, grid
Electrode 12, gate insulating layer 13, two layer metal oxide heterojunction semiconductor 14, source electrode 15 and drain electrode 16；The insulation
Substrate 11 is located at the bottom, is disposed with gate electrode 12 on the insulating substrate 11 from bottom to top, and gate insulating layer 13 is double
Layer metal-oxide semiconductor (MOS) hetero-junctions 14；Active electrode is set on 14 top layer of two layer metal oxide heterojunction semiconductor
15 and drain electrode 16；The two layer metal oxide heterojunction semiconductor 14 includes using solution combustion method on gate insulating layer
The first layer metal oxide semiconductor layer 14(a of formation) and use solution combustion method in first layer metal oxide semiconductor layer
The second layer metal oxide semiconductor layer 14(b of upper formation)；The first layer metal oxide semiconductor layer and second layer gold
Belong to and form two-dimensional electron gas 14(c between oxide semiconductor layer).
The first layer metal oxide semiconductor layer 14(a) with second layer metal oxide semiconductor layer 14(b) be it is molten
The alkali metal of liquid combustion method preparation mixes ZnO metal oxide semiconductor layer or In2O3Metal oxide semiconductor layer.
The gate insulating layer 13 is the gallium oxide of solution combustion method preparation, and hafnium oxide, aluminium oxide or scandium oxide grid are exhausted
Edge layer.
Using ink jet printing, photoetching, silk-screen printing or hot steaming degree is carried out using the exposure mask of certain pattern or electron beam steams
The method of plating forms gate electrode 13 on the upper surface of insulating substrate 11；Using silk-screen printing, photoetching, ink jet printing or use
The exposure mask of certain pattern carries out hot steaming degree or the method for electron beam evaporation plating is divided on two layer metal oxide heterojunction semiconductor 14
It Xing Cheng not source electrode 15 and drain electrode 16.
A kind of preparation method of two layer metal oxide heterojunction semiconductor thin film transistor (TFT), specific steps include:
A) cleaning treatment of insulating substrate: first it is cleaned by ultrasonic flexible substrate 10min with acetone, then cleans flexibility with EtOH Sonicate
Substrate 10min, last deionized water are rinsed, are dried with nitrogen；
B) prepare gate electrode: removing (lift-off) technique is existed specifically, using az5214 photoresist with the revolving speed of 4000rpm
Spin coating photoresist 30s on the upper surface of insulating substrate is successively carried out using 110 degree of hot plate soft baking (soft bake) 60s, exposure
25s, develop 60s, using (hard bake) 110 degree of 90s are dried after hot plate, obtains electrode zone window；Magnetron sputtering cvd nitride
Titanium, tin indium oxide, zinc oxide aluminum, indium zinc oxide, gold, silver, copper or aluminium 100nm；Acetone is cleaned by ultrasonic 10min and removes photoresist
And conductive film, acquisition have the gate electrode of figure thereon；
C) it is surface-treated: the surface clear water that gate electrode and insulating substrate carry out 30 minutes being handled, processing mode is deep ultraviolet light
(DUV), UV ozone (UV/Ozone), oxygen plasma (Oxygen plasma) or the surface air plasma (Air plasma)
One of clear water processing；
D) solution combustion method prepares gate insulating layer: 9.37825g aluminum nitrate hydrate and 3g urea being taken to be dissolved in the 2- mercapto of 10ml
In base ethyl alcohol (2-Me) solution, magnetic agitation 20min obtains aluminum nitrate precursor solution；It will using the PES filter tip of 0.45um
Alumina precursor source is obtained by filtration in aluminum nitrate precursor solution；4500rpm on sample after step c), 40s spin coating oxidation
Aluminium precursor source then carries out the 30min that anneals in 150 degree of air using heating plate, finally carries out 10 minutes UV ozones
(UV/Ozone) processing obtains aluminum oxide gate dielectric；
E) solution combustion method prepares first layer metal oxide semiconductor layer: the ZnO nano powder of 80mg is taken, with ZnO moles
Than the LiOH for 15%, the ammonium nitrate powder for being 1:2.5 with ZnO molar ratio, and the urea for being 1:2.5 with ZnO molar ratio are molten
In 10ml, the ammonium hydroxide of 28% concentration, magnetic agitation 12h obtains the zinc ammonia complex precursor solution that Li mixes；Use 0.45um
PES filter tip Li be obtained by filtration in zinc ammonia complex solution mix ZnO precursor source；With 6000RPM on gate insulating layer
Revolving speed spin coating Li mix ZnO precursor source 30s, then through 150 DEG C, pre-anneal treatment in 10 minutes air, most laggard 10
Deep ultraviolet light (DUV) processing of minute obtains first layer metal oxidation semiconductor layer；
F) solution combustion method prepares second layer metal oxide semiconductor layer: taking the indium nitrate hydrate and and nitre of 0.90249g
Sour indium molar ratio is during the urea of 1:2.5 is dissolved in 2 mercapto ethanol (2-Me) solution of 20ml, and magnetic agitation 20min obtains nitre
Sour indium precursor solution；In is obtained by filtration in nitric acid solution of indium using the PES filter tip of 0.45um2O3Precursor source；In first layer
With the revolving speed spin coating In of 3000RPM on metal-oxide semiconductor layer2O3Precursor source, then through 150 DEG C, in 10 minutes air
Pre-anneal treatment, most laggard 10 minutes deep ultraviolet light (DUV) processing or UV ozone (UV/Ozone) processing obtain the second layer
Metal-oxide semiconductor layer；
G) preparation of source electrode and drain electrode: removing (lift-off) technique is specifically, successively carry out using 110 degrees Celsius of hot plate
Soft baking (soft bake) 60s exposes 25s, and develop 60s, using (hard bake) 110 degrees Celsius of 90s are dried after hot plate, obtains electricity
Pole regional window；Magnetron sputtering depositing titanium nitride, tin indium oxide, zinc oxide aluminum, indium zinc oxide, gold, silver, copper or aluminium 100nm；
Acetone is cleaned by ultrasonic 10min removal photoresist and thereon conductive film, obtains the source electrode and drain electrode for having figure.
Following table is the electric property for the two layer metal oxide heterojunction semiconductor thin film transistor (TFT) that the present embodiment obtains:
| Mobility (cm2V-1s-1) | On-off ratio (Ion/Ioff) | Threshold voltage (V) | Subthreshold swing (V/decade) |
| 37 | 2000 | 0.33 | 1 |
In all steps of preparation method proposed by the invention, the maximum temperature of technique is no more than 150 DEG C, and solution combustion method is exhausted
Edge layer preparation method can provide the insulating layer of thin-film of high capacitive dielectric layer value and high quality, before in treatment process
The redox reaction heat release in liquid solution is driven, greatly reduces preparation temperature, preparation cost is low and reduces film crystal
The operating voltage and hysteresis of pipe, highest annealing temperature are no more than 150 DEG C, can be applied in the flexible substrates such as Pi；
The two layer metal oxide heterojunction semiconductor of solution combustion method preparation proposed by the invention can be no more than 150 DEG C
In a low temperature of prepare the active layer of high quality, and formd in double layer of metal oxide semiconductor layer by the preparation of hetero-junctions
Two-dimensional electron gas (14c), greatly improves the electric property of thin film transistor (TFT).
The high performance gate insulating layer of solution combustion method preparation high quality of the invention can be low no more than 150 DEG C
The gate insulating layer of the lower preparation high quality of temperature, can provide high capacitance and extremely low leakage current, compared to traditional
SiO2Gate insulating layer greatly improves the electric property of thin film transistor (TFT), reduces operating voltage.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any
Those skilled in the art all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.
Therefore, such as those of ordinary skill in the art without departing from revealed spirit of the invention under technical idea
All equivalent modifications completed or change should be covered by the claims of the present invention.
Claims (10)
1. a kind of two layer metal oxide heterojunction semiconductor thin film transistor (TFT), it is characterised in that: including insulating substrate, grid electricity
Pole, gate insulating layer, two layer metal oxide heterojunction semiconductor, source electrode and drain electrode；The insulating substrate is located at most bottom
Layer, is disposed with gate electrode on the insulating substrate from bottom to top, gate insulating layer, and two layer metal oxide semiconductor is different
Matter knot；Source electrode and drain electrode is provided on the two layer metal oxide heterojunction semiconductor top layer；The double-level-metal oxygen
Compound heterojunction semiconductor includes the first layer metal oxide semiconductor formed on gate insulating layer using solution combustion method
Layer and the second layer metal oxide semiconductor layer formed on first layer metal oxide semiconductor layer using solution combustion method；
Two-dimensional electron gas is formd between the first layer metal oxide semiconductor layer and second layer metal oxide semiconductor layer.
2. a kind of two layer metal oxide heterojunction semiconductor thin film transistor (TFT) according to claim 1, it is characterised in that:
The first layer metal oxide semiconductor layer and second layer metal oxide semiconductor layer are the alkali gold of solution combustion method preparation
Category mixes ZnO metal oxide semiconductor layer or In2O3Metal oxide semiconductor layer.
3. a kind of two layer metal oxide heterojunction semiconductor thin film transistor (TFT) according to claim 1, it is characterised in that:
The gate insulating layer is the gallium oxide of solution combustion method preparation, hafnium oxide, aluminium oxide or scandium oxide gate insulating layer.
4. a kind of two layer metal oxide heterojunction semiconductor thin film transistor (TFT) according to claim 1, it is characterised in that:
The method for carrying out hot steaming degree or electron beam evaporation plating using ink jet printing, photoetching, silk-screen printing or using the exposure mask of certain pattern
Gate electrode is formed on the upper surface of insulating substrate；Using silk-screen printing, photoetching, ink jet printing or covering using certain pattern
Film carry out the method for hot steamings degree or electron beam evaporation plating two layer metal oxide heterogeneous semiconductor tie be respectively formed source electrode with
Drain electrode.
5. a kind of preparation method of two layer metal oxide heterojunction semiconductor thin film transistor (TFT), it is characterised in that: specific steps
Include:
A) cleaning treatment of insulating substrate: being first cleaned by ultrasonic flexible substrate 1-30min with acetone, then is cleaned with EtOH Sonicate soft
Property substrate 1-30min, last deionized water rinses, is dried with nitrogen；
B) prepare gate electrode: using ink jet printing, photoetching, silk-screen printing or the exposure mask using certain pattern carry out hot steaming degree or
The method of electron beam evaporation plating forms gate electrode on the upper surface of insulating substrate；
C) it is surface-treated: the surface clear water that gate electrode and insulating substrate carry out 0.1-1 hours is handled, processing mode is dark purple
Outer light, UV ozone, one of oxygen plasma or the processing of air plasma surface clear water；
D) solution combustion method prepares gate insulating layer: with the revolving speed spincoating insulating layer solution combustion method forerunner of 1000-6000RPM
Body source, then through 100-150 DEG C, pre-anneal treatment in -1 hour 10 minutes air, most laggard 1-60 minutes of deep ultraviolet light
Processing or UV ozone handle to obtain gate insulating layer；The insulating layer solution combustion method precursor source is aluminum nitrate, gallium nitrate
Or the 2 mercapto ethanol solution or aqueous solution of scandium nitrate；Contain urea or levulinic in the aluminum nitrate, gallium nitrate or scandium nitrate
Ketone；The molar ratio of one of one of the urea or acetylacetone,2,4-pentanedione and aluminum nitrate, gallium nitrate or scandium nitrate is 0.5-3:
1；
E) solution combustion method prepares first layer metal oxide semiconductor layer: with 1000-6000RPM's on gate insulating layer
Revolving speed spin coating semiconductor layer solution combustion method precursor source, then through 100-150 DEG C, preannealing in -1 hour 10 minutes air
Processing, most laggard 1-60 minutes of deep ultraviolet light or UV ozone handle to obtain first layer metal oxidation semiconductor layer；Semiconductor
Layer solution combustion method precursor source is that alkali metal mixes ZnO precursor source or In2O3Precursor source；Before the alkali metal mixes ZnO
Drive the alkali metal that body source is 0.1-20% molar ratio, the ammonia spirit for aoxidizing zinc complex and ammonium nitrate；The alkali metal is Li,
One of Na, K, Rb, Cs, Fr；Contain urea or acetylacetone,2,4-pentanedione in the oxidation zinc complex；The urea or acetyl
It is 0.5-3: 1 that the molar ratio of acetone and oxidation zinc complex, which is molar ratio, and the ammonia spirit concentration for aoxidizing zinc complex is
0.05-3 molar concentration；It is 0.5-3: 1 that the molar ratio of the ammonium nitrate and oxidation zinc complex, which is molar ratio,；The In2O3Before
Drive the 2 mercapto ethanol solution or aqueous solution of the indium nitrate that body source is 0.05-3 molar concentration；In the indium nitrate containing urea or
Acetylacetone,2,4-pentanedione；The molar ratio of the urea or acetylacetone,2,4-pentanedione and indium nitrate is 0.5-3: 1；
F) solution combustion method prepares second layer metal oxide semiconductor layer: first layer metal oxidation semiconductor layer on
The revolving speed spin coating semiconductor layer solution combustion method precursor source of 1000-6000RPM, then through 100-150 DEG C, -1 hour 10 minutes
Air in pre-anneal treatment, the processing of most laggard 1-60 minutes of deep ultraviolet light or UV ozone handle to obtain second layer metal oxygen
Change semiconductor layer；Semiconductor layer solution combustion method precursor source is that alkali metal mixes ZnO precursor source or In2O3Precursor source；Half
Conductor layer solution combustion method precursor source is that alkali metal mixes ZnO precursor source or In2O3Precursor source；The alkali metal mixes
ZnO precursor source is the alkali metal of 0.1-20% molar ratio, the ammonia spirit for aoxidizing zinc complex and ammonium nitrate；The alkali metal
For Li, Na, K, Rb, Cs, one of Fr；Contain urea or acetylacetone,2,4-pentanedione in the oxidation zinc complex；The urea
Or acetylacetone,2,4-pentanedione is 0.5-3: 1 with the molar ratio for aoxidizing zinc complex, the ammonia spirit concentration for aoxidizing zinc complex is 0.05-3
Molar concentration；The molar ratio of the ammonium nitrate and oxidation zinc complex is 0.5-3: 1；The In2O3Precursor source is 0.05-3
The 2 mercapto ethanol solution or aqueous solution of the indium nitrate of molar concentration；Contain urea or acetylacetone,2,4-pentanedione in the indium nitrate；It is described
The molar ratio of urea or acetylacetone,2,4-pentanedione and indium nitrate is 0.5-3: 1；
G) silk-screen printing, photoetching, ink jet printing, or the exposure mask using certain pattern the preparation of source electrode and drain electrode: are used
The method for carrying out hot steaming degree or electron beam evaporation plating is respectively formed source electrode and drain electrode on second layer metal oxidation semiconductor layer.
6. a kind of preparation method of two layer metal oxide heterojunction semiconductor thin film transistor (TFT) according to claim 5,
It is characterized by: the gallium oxide aqueous solution precursor source preparation step include: by the gallium nitrate of 0.05-3 molar concentration and
The urea or acetylacetone,2,4-pentanedione for being 0.5-3: 1 with gallium nitrate molar ratio are dissolved in deionized water or 2 mercapto ethanol solution or aqueous solution
In, then carry out 0.5-24 hours magnetic agitations or ultrasonic treatment forms the gallium oxide precursor solution of certain concentration, then mistake
Filter is stand-by.
7. a kind of preparation method of two layer metal oxide heterojunction semiconductor thin film transistor (TFT) according to claim 5,
It is characterized by: the oxidation aluminum water solution precursor source preparation step include: by the aluminum nitrate of 0.05-3 molar concentration and
The urea or acetylacetone,2,4-pentanedione for being 0.5-3: 1 with nitric acid al mole ratio are dissolved in deionized water or 2 mercapto ethanol solution, then are carried out
0.5-24 hours magnetic agitations or ultrasonic treatment form the aluminum oxide precursor liquid solution of certain concentration, and then filtering is stand-by.
8. a kind of preparation method of two layer metal oxide heterojunction semiconductor thin film transistor (TFT) according to claim 5,
It is characterized by: the scandium oxide aqueous solution precursor source preparation step include: by the scandium nitrate of 0.05-3 molar concentration and
The urea or acetylacetone,2,4-pentanedione for being 0.5-3: 1 with scandium nitrate molar ratio are dissolved in deionized water or 2 mercapto ethanol solution, then are carried out
0.5-24 hours magnetic agitations or ultrasonic treatment form the scandium oxide precursor solution of certain concentration, and then filtering is stand-by.
9. a kind of preparation method of two layer metal oxide heterojunction semiconductor thin film transistor (TFT) according to claim 5,
It is characterized by: the In2O3Precursor source is the indium nitrate aqueous solution of 0.05-3 molar concentration；The In2O3Precursor source by
Following steps preparation: the urea or acetyl for being 0.5 ~ 3: 1 by the indium nitrate of 0.05-3 molar concentration and with indium nitrate molar ratio
Acetone is dissolved in deionized water or 2 mercapto ethanol solution, then carries out 0.5-24 hours magnetic agitations or ultrasonic treatment formation spies
Determine the indium nitrate precursor solution of concentration, then filtering is stand-by.
10. a kind of preparation method of two layer metal oxide heterojunction semiconductor thin film transistor (TFT) according to claim 5,
It is characterized by: the alkali metal mixes alkali metal/zinc oxide complexing that ZnO aqueous solution precursor source is 0.1-20% molar ratio
The ammonia spirit of object, the ammonia spirit concentration for aoxidizing zinc complex is 0.05-3 molar concentration, and the alkali metal is selected from Li, Na,
One of K, Rb, Cs, Fr；It includes: that 0.05-1 rubs that the alkali metal, which mixes ZnO aqueous solution precursor source preparation step,
The zinc oxide nano powder of your concentration is dissolved in the ammonium hydroxide of 10-40% concentration, then by the lithium hydroxide of 0.1-20% molar ratio, hydroxide
Potassium, sodium hydroxide, rubidium hydroxide, cesium hydroxide, one or more of hydroxide francium are 0.5 ~ 3: 1 with zinc oxide molar ratio
Urea or acetylacetone,2,4-pentanedione, and with zinc oxide molar ratio be 0.5 ~ 3: 1 ammonium nitrate be added thereto；Then 0.5-24 is carried out
The magnetic agitation or ultrasonic treatment of hour forms alkali metal and mixes ZnO precursor source solution, and filtering is stand-by later.
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