CN110137230A - A kind of OLED display panel and preparation method thereof - Google Patents

A kind of OLED display panel and preparation method thereof Download PDF

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Publication number
CN110137230A
CN110137230A CN201910421446.4A CN201910421446A CN110137230A CN 110137230 A CN110137230 A CN 110137230A CN 201910421446 A CN201910421446 A CN 201910421446A CN 110137230 A CN110137230 A CN 110137230A
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pixel
thin film
layer
pixel thin
ave
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CN110137230B (en
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史婷
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to PCT/CN2019/111006 priority patent/WO2020232955A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses a kind of OLED display panels and preparation method thereof.The OLED display panel includes: TFT substrate；Electrode layer in the TFT substrate；Pixel defining layer in the TFT substrate and the electrode layer, and the pixel defining layer forms pixel openings on the electrode layer；Pixel thin film in the pixel openings；The film thickness of the central area of the pixel thin film is located in the first preset range, and the contact height of at least two lateral walls of the pixel thin film and the pixel openings is located in the second preset range, to effectively improve panel efficiency and service life.

Description

A kind of OLED display panel and preparation method thereof
Technical field
The present invention relates to technical field of display panel more particularly to a kind of OLED display panel and preparation method thereof.
Background technique
The advantages that organic electroluminescent LED (OLED) is because of its high brightness, self-luminous, response are fast and low driving voltage, The emerging technology of display field is had become, but since vacuum thermal evaporation preparation cost is high, limits its a wide range of commercialization.Spray Black printing technique has many advantages, such as that stock utilization is high, is the key technology for solving large scale OLED and showing cost problem, the skill Art is functional material ink to be instilled scheduled pixel region using multiple nozzles, and pass through film needed for dry obtain.
The thickness and pattern of pixel thin film are most important to the OLED characteristics of luminescence, especially in solution procedure for processing, pixel The optimization of the thickness and pattern of film is more particularly important.And film in the prior art climb in pixel openings it is higher, It will lead to device inside and generate drain current path, reduce device lifetime；Uniformity of film is poor, can also directly result in and shine uniformly Property is poor, and device efficiency and service life substantially reduce.
Summary of the invention
The embodiment of the present invention provides a kind of OLED display panel and preparation method thereof, to solve existing oled panel by pixel Inefficiency caused by film morphology, service life short problem.
The embodiment of the invention provides a kind of OLED display panels, comprising:
TFT substrate；
Electrode layer in the TFT substrate；
Pixel defining layer in the TFT substrate and the electrode layer, and the pixel defining layer is in the electrode Pixel openings are formed on layer；
Pixel thin film in the pixel openings；It is default that the film thickness of the central area of the pixel thin film is located at first In range, the contact height of at least two lateral walls of the pixel thin film and the pixel openings is located at the second preset range It is interior.
Further, 80% of the central area of the pixel thin film greater than the pixel thin film cross section, described first Preset range is TAve- 10%~TAve+ 10%, second preset range is TAve~1.2TAve；Wherein, TAveFor the pixel The average film thickness of the central area of film.
Further, the pixel thin film is prepared by InkJet printing processes, and the film thickness of the pixel thin film passes through Drying temperature and the vacuum drying condition adjusted in InkJet printing processes obtains.
Further, hole injection layer, hole transmission layer and luminescent layer, the pixel are successively arranged in the pixel openings Film includes at least one of the hole injection layer, the hole transmission layer and described luminescent layer.
Further, if the pixel thin film includes the hole injection layer, the central area of the hole injection layer Average film thickness be 30~40nm, prepare the hole injection layer drying temperature be 10 DEG C, vacuum drying condition be 140s in Vacuum degree reaches 1.5pa.
Further, if the pixel thin film includes the hole transmission layer, the central area of the hole transmission layer Average film thickness be 20nm, prepare the hole injection layer drying temperature be 25 DEG C, vacuum drying condition be 140s in vacuum Degree reaches 1.5pa.
Further, if the pixel thin film includes luminescent layer, the luminescent layer includes red light emitting layer, blue light-emitting layer Or green light emitting layer, then the average film thickness of the central area of the red light emitting layer and the green light emitting layer is 50~60nm, The average film thickness of the central area of the blue light-emitting layer is 40nm, and the drying temperature for preparing the red light emitting layer is 25 DEG C, The drying temperature for preparing the green light emitting layer is 55 DEG C, and the drying temperature for preparing the blue light-emitting layer is 35 DEG C, prepares institute The vacuum drying condition for stating red light emitting layer, the blue light-emitting layer and the green light emitting layer is that vacuum degree reaches in 80s 1.5pa。
The embodiment of the invention also provides a kind of production methods of OLED display panel, comprising:
TFT substrate is provided；
Electrode layer is formed in the TFT substrate；
Pixel defining layer is formed in the TFT substrate and the electrode layer, and the pixel defining layer is in the electrode Pixel openings are formed on layer；
Pixel thin film is formed in the pixel openings；It is default that the film thickness of the central area of the pixel thin film is located at first In range, the contact height of at least two lateral walls of the pixel thin film and the pixel openings is located at the second preset range It is interior.
Further, 80% of the central area of the pixel thin film greater than the pixel thin film cross section, described first Preset range is TAve- 10%~TAve+ 10%, second preset range is TAve~1.2TAve；Wherein, TAveFor the pixel The average film thickness of the central area of film.
Further, described to form pixel thin film in the pixel openings, it specifically includes:
By adjusting drying temperature and vacuum drying condition in InkJet printing processes, institute is formed in the pixel openings Need the pixel thin film of film thickness.
The invention has the benefit that the pixel thin film in setting pixel openings, makes the film of the central area of pixel thin film Thickness is located in the first preset range, to guarantee the uniformity of pixel thin film, and makes at least opposite of pixel thin film and pixel openings The contact height of two sidewalls is located in the second preset range, causes panel itself to generate electric leakage flow path to avoid contact height is excessively high Diameter, to effectively improve panel efficiency and service life.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these Figure obtains other attached drawings.
Fig. 1 is the structural schematic diagram of OLED display panel provided in an embodiment of the present invention；
Fig. 2 is another structural schematic diagram of OLED display panel provided in an embodiment of the present invention；
Fig. 3 is the flow diagram of the production method of OLED display panel provided in an embodiment of the present invention.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side] Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
It is the structural schematic diagram of OLED display panel provided in an embodiment of the present invention referring to Fig. 1.
OLED display panel provided in an embodiment of the present invention includes TFT substrate 11；Electrode in the TFT substrate 11 Layer 12；Pixel defining layer 13 in the TFT substrate 11 and the electrode layer 12, and the pixel defining layer 13 is described Pixel openings 15 are formed on electrode layer 12；Pixel thin film 14 in the pixel openings.
Specifically, electrode layer 12 can be transparent conductive film (ITO), and electrode layer 12 includes multiple in array arrangement Electrode, the electrode can be anode.Pixel defining layer 13 is located in TFT substrate 11 and is located on segment electrode layer 12, and pixel is fixed Adopted layer 13 has multiple pixel openings 15 in array arrangement, and multiple pixel openings 15 are arranged in a one-to-one correspondence with multiple electrodes. Sub-pixel is equipped in pixel openings 15, sub-pixel includes but is not limited to red sub-pixel, blue subpixels or green sub-pixels.Picture Sub-pixel in element opening 15 includes pixel thin film 14, and the pixel thin film 14 has default film morphology.
The default film morphology is that the central area general uniform of pixel thin film 14 is arranged, the marginal zone of pixel thin film 14 The thickness in domain is located in a certain range.As shown in Figure 1, the central area of pixel thin film 14 refers to the central point of pixel thin film 14 Partial pixel thin membrane regions centered on B, the fringe region of pixel thin film 14 refer to central area to 15 side wall of pixel openings it Between pixel thin film region.
Specifically, the film thickness of the central area of the pixel thin film 14 is located in the first preset range, the pixel thin film 14 are located in the second preset range with the contact heights of at least two lateral walls of the pixel openings 15.As shown in Figure 1, pixel Film 14 and the contact highest point of the two lateral walls of pixel openings 15 are respectively A1 and A2, pixel thin film 14 and pixel openings 15 The contact heights of two lateral walls be film thickness at A1 and A2.Wherein, the film thickness at A1 and A2 can be identical, can also not Together, the film thickness at central point B can be greater than the film thickness at A1, A2, might be less that the film thickness at A1, A2.Film at A1 and A2 Thickness is located in the second preset range, the contact height of the other two sidewalls (not shown) of pixel thin film 14 and pixel openings 15 It can also be located in the second preset range.
In a specific embodiment, it is transversal to be greater than the pixel thin film 14 for the central area of the pixel thin film 14 The 80% of face, first preset range are TAve- 10%~TAve+ 10%, second preset range is TAve~1.2TAve； Wherein, TAveFor the average film thickness of the central area of the pixel thin film 14.
It should be noted that the area of 14 cross section of pixel thin film is the area of sub-pixel, at least 80% pixel is thin The setting of film general uniform, i.e., the film thickness of at least 80% pixel thin film are located at TAve- 10%~TAveBetween+10%, pixel thin film 14 are located at T with the contact heights of at least two lateral walls of the pixel openings 15Ave~1.2TAveBetween.
Further, as shown in Fig. 2, the sub-pixel in pixel openings 15 includes the hole note being sequentially arranged on electrode layer 12 Enter layer (HIL) 16, hole transmission layer (HTL) 17, luminescent layer (EML) 18 etc..Wherein, the luminescent layer in red sub-pixel is red Luminescent layer, the luminescent layer in blue subpixels are blue light-emitting layer, and the luminescent layer in green sub-pixels is green light emitting layer.Pixel Film 14 includes at least one of hole injection layer 16, hole transmission layer 17 and luminescent layer 18, i.e. hole injection layer 16, hole At least one functional layer has the film morphology of above-mentioned pixel thin film in transport layer 17 and luminescent layer 18.
Further, the pixel thin film 14 is prepared by InkJet printing processes, the film thickness of the pixel thin film 14 By adjusting drying temperature and vacuum drying condition acquisition in InkJet printing processes.Central area required for different films Average film thickness TAveDifference, so prepare the film drying temperature and vacuum drying condition it is also different.Wherein, hole is injected The average film thickness T of the central area of layer 16, hole transmission layer 17 and luminescent layer 18AveAnd process conditions are as shown in table 1.
Table 1
Wherein, the temperature value in process conditions refers to drying temperature value, and slow take out refers to that vacuum degree can reach in 140s 1.5pa, fast take out refer to that vacuum degree can reach 1.5pa in 80s.
Specifically, if the pixel thin film includes the hole injection layer 16, the center of the hole injection layer 16 The average film thickness in domain is 30~40nm, and the drying temperature for preparing the hole injection layer 16 is 10 DEG C, and vacuum drying condition is Vacuum degree reaches 1.5pa in 140s.
If the pixel thin film includes the hole transmission layer 17, the central area of the hole transmission layer 17 is averaged Film thickness is 20nm, and the drying temperature for preparing the hole injection layer 17 is 25 DEG C, and vacuum drying condition is that vacuum degree reaches in 140s To 1.5pa.
If the pixel thin film includes luminescent layer 18, the luminescent layer includes red light emitting layer, blue light-emitting layer or green Luminescent layer, then the average film thickness of the central area of the red light emitting layer and the green light emitting layer is 50~60nm, the indigo plant The average film thickness of the central area of color luminescent layer is 40nm, and the drying temperature for preparing the red light emitting layer is 25 DEG C, prepares institute The drying temperature for stating green light emitting layer is 55 DEG C, and the drying temperature for preparing the blue light-emitting layer is 35 DEG C, prepares the red The vacuum drying condition of luminescent layer, the blue light-emitting layer and the green light emitting layer is that vacuum degree reaches 1.5pa in 80s.
By adjusting hole injection layer 16, hole transmission layer 17 and luminescent layer 18 drying temperature and vacuum drying condition, The corresponding film having good uniformity is obtained, and reduces the contact height of film and pixel openings side wall.In addition, can also be by adjusting Ink viscosity, surface tension in InkJet printing processes etc. adjust the thickness of film.
Now illustrate the performance change before and after its adjustment of technology by taking red organic electroluminescence device as an example, such as 2 institute of table Show, before adjustment of technology, photochromic device is (0.66,0.34), current efficiency 100%, device lifetime 100%.Pass through The adjustment of process conditions, film morphology and thickness in device are improved, and the efficiency of device has small elevation (promoting 5%), The service life of device has a distinct increment and (promotes 69%), to be effectively improved efficiency and the service life of OLED display panel.
Table 2
It can be seen from the above, OLED display panel provided in this embodiment, can be arranged the pixel thin film in pixel openings, make The film thickness of the central area of pixel thin film is located in the first preset range, to guarantee the uniformity of pixel thin film, and keeps pixel thin The contact height of at least two lateral walls of film and pixel openings is located in the second preset range, leads to avoid contact height is excessively high Panel itself is caused to generate drain current path, to effectively improve device efficiency and service life.
It is the flow diagram of the production method of OLED display panel provided in an embodiment of the present invention referring to Fig. 3.
The production method of OLED display panel provided in this embodiment includes:
101, TFT substrate is provided.
102, electrode layer is formed in the TFT substrate.
In the present embodiment, as shown in Figure 1, electrode layer 12 can be transparent conductive film (ITO), and electrode layer 12 includes more A electrode in array arrangement, which can be anode.
103, pixel defining layer is formed in the TFT substrate and the electrode layer, and the pixel defining layer is described Pixel openings are formed on electrode layer.
In the present embodiment, as shown in Figure 1, pixel defining layer 13 is located in TFT substrate 11 and is located on segment electrode layer 12, Pixel defining layer 13 has multiple pixel openings 15 in array arrangement, and multiple pixel openings 15 and multiple electrodes correspond Setting.
104, pixel thin film is formed in the pixel openings；The film thickness of the central area of the pixel thin film is located at first In preset range, the contact height of at least two lateral walls of the pixel thin film and the pixel openings is located at the second default model In enclosing.
In the present embodiment, sub-pixel is equipped in pixel openings 15, sub-pixel includes but is not limited to red sub-pixel, blue Pixel or green sub-pixels.Sub-pixel in pixel openings 15 includes pixel thin film 14, and the pixel thin film 14 is thin with presetting Film pattern.The default film morphology is that the central area general uniform of pixel thin film 14 is arranged, the marginal zone of pixel thin film 14 The thickness in domain is located in a certain range.As shown in Figure 1, the central area of pixel thin film 14 refers to the central point of pixel thin film 14 Partial pixel thin membrane regions centered on B, the fringe region of pixel thin film 14 refer to central area to 15 side wall of pixel openings it Between pixel thin film region.
Specifically, the film thickness of the central area of the pixel thin film 14 is located in the first preset range, the pixel thin film 14 are located in the second preset range with the contact heights of at least two lateral walls of the pixel openings 15.As shown in Figure 1, pixel Film 14 and the contact highest point of the two lateral walls of pixel openings 15 are respectively A1 and A2, pixel thin film 14 and pixel openings 15 The contact heights of two lateral walls be film thickness at A1 and A2.Wherein, the film thickness at A1 and A2 can be identical, can also not Together, the film thickness at central point B can be greater than the film thickness at A1, A2, might be less that the film thickness at A1, A2.Film at A1 and A2 Thickness is located in the second preset range, the contact height of the other two sidewalls (not shown) of pixel thin film 14 and pixel openings 15 It can also be located in the second preset range.
In a specific embodiment, it is transversal to be greater than the pixel thin film 14 for the central area of the pixel thin film 14 The 80% of face, first preset range are TAve- 10%~TAve+ 10%, second preset range is TAve~1.2TAve； Wherein, TAveFor the average film thickness of the central area of the pixel thin film 14.
It should be noted that the area of 14 cross section of pixel thin film is the area of sub-pixel, at least 80% pixel is thin The setting of film general uniform, i.e., the film thickness of at least 80% pixel thin film are located at TAve- 10%~TAveBetween+10%, pixel thin film 14 are located at T with the contact heights of at least two lateral walls of the pixel openings 15Ave~1.2TAveBetween.
Specifically, step 104 includes:
By adjusting drying temperature and vacuum drying condition in InkJet printing processes, institute is formed in the pixel openings Need the pixel thin film of film thickness.
In the present embodiment, pixel thin film 14 include hole injection layer 16, hole transmission layer 17 and luminescent layer 18 at least One, i.e., at least one functional layer has above-mentioned pixel thin film in hole injection layer 16, hole transmission layer 17 and luminescent layer 18 Film morphology.The average film thickness T of central area required for different filmsAveDifference, and then prepare the drying temperature of the film It is also different with vacuum drying condition.
By adjusting hole injection layer 16, hole transmission layer 17 and luminescent layer 18 drying temperature and vacuum drying condition, The corresponding film having good uniformity is obtained, and reduces the contact height of film and pixel openings side wall.In addition, can also be by adjusting Ink viscosity, surface tension in InkJet printing processes etc. adjust the thickness of film.
It can be seen from the above, the production method of OLED display panel provided in this embodiment, can be arranged in pixel openings Pixel thin film is located at the film thickness of the central area of pixel thin film in the first preset range, to guarantee the uniformity of pixel thin film, And it is located at the contact height of at least two lateral walls of pixel thin film and pixel openings in the second preset range, to avoid contact Excessive height causes panel itself to generate drain current path, to effectively improve device efficiency and service life.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention Decorations, therefore protection scope of the present invention subjects to the scope of the claims.

Claims (10)

1. a kind of OLED display panel characterized by comprising
TFT substrate；
Electrode layer in the TFT substrate；
Pixel defining layer in the TFT substrate and the electrode layer, and the pixel defining layer is on the electrode layer Form pixel openings；
Pixel thin film in the pixel openings；The film thickness of the central area of the pixel thin film is located at the first preset range Interior, the contact height of at least two lateral walls of the pixel thin film and the pixel openings is located in the second preset range.
2. OLED display panel according to claim 1, which is characterized in that the central area of the pixel thin film is greater than institute The 80% of pixel thin film cross section is stated, first preset range is TAve- 10%~TAve+ 10%, second preset range For TAve~1.2TAve；Wherein, TAveFor the average film thickness of the central area of the pixel thin film.
3. OLED display panel according to claim 2, which is characterized in that the pixel thin film passes through InkJet printing processes It prepares, the film thickness of the pixel thin film is obtained by adjusting drying temperature in InkJet printing processes and vacuum drying condition ?.
4. OLED display panel according to claim 3, which is characterized in that be successively arranged hole note in the pixel openings Enter layer, hole transmission layer and luminescent layer, the pixel thin film includes the hole injection layer, the hole transmission layer and the hair At least one of photosphere.
5. OLED display panel according to claim 4, which is characterized in that if the pixel thin film includes the hole note Enter layer, then the average film thickness of the central area of the hole injection layer is 30~40nm, prepares the drying of the hole injection layer Temperature is 10 DEG C, and vacuum drying condition is that vacuum degree reaches 1.5pa in 140s.
6. OLED display panel according to claim 4, which is characterized in that if the pixel thin film includes that the hole passes Defeated layer, then the average film thickness of the central area of the hole transmission layer is 20nm, prepares the drying temperature of the hole injection layer It is 25 DEG C, vacuum drying condition is that vacuum degree reaches 1.5pa in 140s.
7. OLED display panel according to claim 4, which is characterized in that if the pixel thin film includes luminescent layer, institute Stating luminescent layer includes red light emitting layer, blue light-emitting layer or green light emitting layer, the then red light emitting layer and the green emitting The average film thickness of the central area of layer is 50~60nm, and the average film thickness of the central area of the blue light-emitting layer is 40nm, system The drying temperature of the standby red light emitting layer is 25 DEG C, and the drying temperature for preparing the green light emitting layer is 55 DEG C, described in preparation The drying temperature of blue light-emitting layer is 35 DEG C, prepares the red light emitting layer, the blue light-emitting layer and the green light emitting layer Vacuum drying condition be 80s in vacuum degree reach 1.5pa.
8. a kind of production method of OLED display panel characterized by comprising
TFT substrate is provided；
Electrode layer is formed in the TFT substrate；
Pixel defining layer is formed in the TFT substrate and the electrode layer, and the pixel defining layer is on the electrode layer Form pixel openings；
Pixel thin film is formed in the pixel openings；The film thickness of the central area of the pixel thin film is located at the first preset range Interior, the contact height of at least two lateral walls of the pixel thin film and the pixel openings is located in the second preset range.
9. the production method of the OLED display panel according to shown in claim 8, which is characterized in that the center of the pixel thin film Region is greater than the 80% of the pixel thin film cross section, and first preset range is TAve- 10%~TAve+ 10%, described Two preset ranges are TAve~1.2TAve；Wherein, TAveFor the average film thickness of the central area of the pixel thin film.
10. the production method of OLED display panel according to claim 9, which is characterized in that described to be opened in the pixel Pixel thin film is formed in mouthful, is specifically included:
By adjusting drying temperature and vacuum drying condition in InkJet printing processes, film needed for being formed in the pixel openings Thick pixel thin film.
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