CN110137082A - A kind of optimization method of power device groove pattern - Google Patents
A kind of optimization method of power device groove pattern Download PDFInfo
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- CN110137082A CN110137082A CN201810134748.9A CN201810134748A CN110137082A CN 110137082 A CN110137082 A CN 110137082A CN 201810134748 A CN201810134748 A CN 201810134748A CN 110137082 A CN110137082 A CN 110137082A
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000005457 optimization Methods 0.000 title claims abstract description 28
- 238000005530 etching Methods 0.000 claims abstract description 40
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000001259 photo etching Methods 0.000 claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims description 26
- 239000012530 fluid Substances 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 8
- 238000012876 topography Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 230000000694 effects Effects 0.000 description 5
- 230000002000 scavenging effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 210000003323 beak Anatomy 0.000 description 2
- 239000008155 medical solution Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A kind of optimization method of power device groove pattern, step includes: S1: growing one layer of pad oxygen oxide layer in sample surfaces；S2: one layer of mask layer is deposited in the pad oxygen oxide layer；S3: photoetching is carried out to the sample；S4: the sample after photoetching is performed etching；S5: etching groove is carried out to the sample after etching；S6: one layer of thermal oxide layer of growth；S7: corrode to the sample after the thermal oxide layer has been grown.The beneficial effect of the application is: by selective oxidation mode, topography optimization has been carried out to the top of the groove, to make the yield of device on the whole be promoted, and device parameters are stablized；It can solve that equipment does not have the ability of the round and smooth processing in turning simultaneously and limited problem to improve the top of the groove turning pattern under the premise of not needing to increase expensive etching groove equipment reduces processing procedure cost.
Description
Technical field
The application belongs to groove pattern technical field, specifically, being related to a kind of optimization side of power device groove pattern
Method.
Background technique
With the continuous promotion that the reinforcement of application terminal demand and efficiency require, groove-type power device is because it is in lifter
While part performance, the advantage that can also reduce chip area is rapidly developed, such as: SBD, MOS, IGBT device are from plane
Type is converted to plough groove type device.The groove power device of superior performance is researched and developed, groove pattern becomes hot technology, and to processing
More stringent requirements are proposed for technique and equipment.
The requirement of groove pattern is usually: bottom is more round and smooth；Side wall is smooth, angle stabilization, and inclination angle is at 85 °~90 °
Between；Top does not have wedge angle.By taking current domestic power device fab as an example, the etching groove ability of 8 cun of part line is stronger, but
The etching groove ability of 6 cun of part producing line is irregular, causes the plough groove type device of domestic such fab to be promoted slow.Due to
The limitation of capacity of equipment, the pattern of groove are not able to satisfy the requirement of device architecture, therefore can be by optimizing trench process process
Groove pattern is adjusted, improves the top of the groove turning problem, promotes the yield and reliability of device, and reduce processing procedure at
This.
Conventional trench process process is: depositing one layer of TEOS (or Si3N4) medium in silicon chip surface and does exposure mask, then covers
Film layer photoetching, mask layer etching, cleaning of removing photoresist, last etching groove remove hard mask layer, and subsequent is exactly relevant scavenger
Skill and sacrifice oxidation, so far the technique of groove is completed.Using conventional trench process process, although passing through the quarter for changing groove
Program is lost, uniformity in the angle adjustment and piece of the round and smooth and side wall of channel bottom may be implemented and get a promotion, but for
The processing capacity of top corner is insufficient, wedge angle phenomenon occurs, influences the electrical property and reliability of device.Wedge angle phenomenon is in Schottky device
The problems such as electric leakage is big, and yield reduces is caused in part；In IGBT device, it is difficult to guarantee the gate oxide growth and polysilicon in groove
The quality of filling, to influence the stability and reliability of device.
Summary of the invention
In view of this, the technical problem to be solved by the application is to provide a kind of optimization sides of power device groove pattern
Method can be such that the top of the groove turning is switched to by wedge angle round and smooth in the way of selective oxidation, and then improve filling out for grid oxygen and polysilicon
Defect problem is filled, to promote the parameter and stability of device.
In order to solve the above-mentioned technical problem, this application discloses a kind of optimization methods of power device groove pattern, and adopt
It is realized with following technical scheme.
A kind of optimization method of power device groove pattern, step include:
S1: one layer of pad oxygen oxide layer is grown in sample surfaces；
S2: one layer of mask layer is deposited in the pad oxygen oxide layer；
S3: photoetching is carried out with the sample that deposited the mask layer to grown the pad oxygen oxide layer；
S4: the sample after photoetching is performed etching；
S5: etching groove is carried out to the sample after etching；
S6: the growth of thermal oxide layer is carried out to the sample after etching groove, grows one layer of thermal oxide layer；
S7: corrode to the sample after the thermal oxide layer has been grown.
Further, it is described pad oxygen oxide layer with a thickness of
Further, the mask layer is for thicknessSi3N4Mask layer.
Further, the thermal oxide layer with a thickness of
Further, the S4 performs etching the sample after photoetching using oxide layer dry etching machine.
Further, etching groove is carried out to the sample after etching using trench dry etching machine in the S5.
Further, corroded in the S7 using BOE medical fluid.
Further, it is cleaned before growing the pad oxygen oxide layer and/or before the growth thermal oxide layer；To institute
It states and carries out cleaning of removing photoresist after sample performs etching；Groove cleaning is carried out after carrying out etching groove to the sample.
A kind of power device obtained using any of the above-described optimization method, the silicon chip surface of the power device is from inner
Successively there is pad oxygen oxide layer, mask layer outward, there is thermal oxide layer in the groove of the silicon wafer.
Compared with prior art, the application can be obtained including following technical effect: by selective oxidation mode, to groove
Top has carried out topography optimization, to make the yield of device on the whole be promoted, and device parameters are stablized；It can solve simultaneously
Equipment does not have the ability of the round and smooth processing in turning and limited problem, thus not needing to increase expensive etching groove equipment
Under the premise of, improve the top of the groove turning pattern, reduces processing procedure cost.
Certainly, any product for implementing the application must be not necessarily required to reach all the above technical effect simultaneously.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 is the groove pattern analogous diagram before optimization.
Fig. 2 is the groove pattern analogous diagram that the optimization method of the application one embodiment obtains.
Specific embodiment
Presently filed embodiment is described in detail below in conjunction with accompanying drawings and embodiments, how the application is applied whereby
Technological means solves technical problem and reaches the realization process of technical effect to fully understand and implement.
The present invention uses beak effect, i.e. LOCOS technique Local Oxidation of Silicon local oxidation of silicon,
The edge that nitride is raised using the oxide growth under nitride mask, in deposit Si3N4Before making exposure mask, one layer of pad is grown
Oxygen oxide layer can effectively reduce the stress difference between Si and Si3N4；After etching groove, under the premise of unstripped mask layer,
One layer of thermal oxide layer of regrowth, this layer of oxide layer can eliminate etching groove damage caused by the Si in groove, simultaneously because this
The silicon of one layer of thermal oxide layer specific consumption is thick, so with Si3N4Under oxide layer growth, will gradually raise Si3N4Side
There is beak effect in edge.
The present invention mainly passes through local oxidation of silicon method optimization trench process process, to prepare the excellent ditch of pattern
Slot structure, specific method have as follows:
S1: it is cleaned before pad oxygen；It treats and makees the sample of groove structure and cleaned, cleaning includes cleaning before padding oxygen twice, and two
The cleaning solution of secondary cleaning is respectively SC1And HF；
Cleaning uses SC before pad oxygen for the first time1Medical fluid.SC1Medical fluid is NH3·H2O、H2O2And H2The mixed liquor of O.This implementation
The proportion for the three that example is selected are as follows: NH3·H2O:H2O2: H2O volume ratio is 1:1:50~1:1:6.Sample is in SC1It is cleaned in medical fluid
Time be 60s~3600s.
Cleaning uses HF medical fluid before second of pad oxygen.HF medical fluid is HF and H2The mixed liquor of O.The two that the present embodiment is selected
Proportion are as follows: HF:H2O volume ratio is 5:1~5000:1.Scavenging period of the sample in HF medical fluid are as follows: 10s~1000s.
S2: one layer of pad oxygen oxide layer is grown on crystal silicon surface；
The present embodiment selects boiler tube growthPad oxygen oxide layer.
S3: one layer is deposited again on pad oxygen oxide layerSi3N4Mask layer；
In semicon industry, film is formed using the technology of deposit, is common technique in industry, which is not described herein again.
Pad oxygen oxide layer and Si3N4Mask layer, two membranes are collectively as the first hard exposure mask；
S4: photoetching is carried out to the first hard exposure mask；The step of photoetching includes gluing, exposure, development；
According to different sample requirements, finds by adjusting parameter values such as photoresist thickness, exposure energy, developer pressures and most close
Suitable value, to obtain the pattern of groove line width and glue needed for device.
S5: performing etching the first hard exposure mask,
The specific steps of etching are as follows: etched with oxide layer dry etching machineOxygen oxide layer is padded, andSi3N4Mask layer.
S6: cleaning of removing photoresist is carried out to the sample after etching；
Cleaning of removing photoresist can be used that dry method is removed photoresist and wet process is removed photoresist two ways.Wherein, the dry method using plasma that removes photoresist is gone
Except photoresist；Wet process is removed photoresist the H for using volume ratio as 1000:1~10:12SO4And H2O2Mixed liquor remove photoresist, this implementation
The time of removing photoresist that example is selected is 100s~1800s.
S7: etching groove is carried out；
Etching groove is carried out to sample with trench dry etching machine, groove width needed for etching sample and depth.
S8: groove cleaning is carried out；Groove cleaning includes the cleaning of first time groove and second of groove cleaning, cleaning solution difference
For H2SO4Medical fluid and SC1Medical fluid；
First use H2SO4Medical fluid carries out the cleaning of first time groove to the sample after etching；H2SO4Medical fluid is H2SO4And H2O2It is mixed
Medical fluid is closed, wherein H2SO4And H2O2Volume ratio be 1000:1~10:1, first time groove scavenging period be 100s~1800s；
Then SC is used1Sample after medical fluid cleans first time groove carries out second of groove cleaning；SC1Medical fluid is NH3·
H2O、H2O2And H2The admixing medical solutions of O, wherein NH3·H2O、H2O2And H2The volume ratio of O is 1:1:50~1:1:6；Second of groove
The scavenging period of cleaning is 60min~200min.
S9: the cleaning before carrying out thermal oxide；Cleaning includes twice that cleaning solution is respectively SC before thermal oxide1Medical fluid and HF medicine
Liquid；
Cleaning uses SC before first time thermal oxide1Medical fluid.SC1Medical fluid is NH3·H2O、H2O2And H2The admixing medical solutions of O,
Middle NH3·H2O、H2O2And H2The volume ratio of O is 1:1:50~1:1:6.Scavenging period is 60s~3600s.
Cleaning uses HF medical fluid before second of thermal oxide.HF medical fluid is HF and H2The mixed liquor of O.The two of the present embodiment selection
The proportion of person are as follows: HF:H2O volume ratio is 5:1~5000:1.Scavenging period of the sample in HF medical fluid are as follows: 10s~1000s.
S10: in Si3N4One layer of thermal oxide layer is regrowed on mask layer；The growth of thermal oxide layer is carried out using boiler tube, it is raw
It is long with a thickness of
First hard mask layer and the thermal oxide layer newly grown are collectively as the second hard exposure mask.
S11: the second hard exposure mask is corroded；By the second entire hard exposure mask, pad oxide including first time, second
Secondary Si3N4Mask layer and thermal oxide layer, corrosion are clean.
Corroded when corrosion using pad oxygen oxide layer of the BOE medical fluid to first layer, etching time is 10s~90S.With heat
Phosphoric acid medical fluid is to Si3N4Mask layer is corroded, and corrosion temperature is 80 DEG C~180 DEG C, and etching time is 30min~90min.Again
Thermal oxide layer is corroded with BOE medical fluid, etching time is 10s~1200s.
Fig. 1 is the groove pattern analogous diagram before optimization, and Fig. 2 is the groove pattern analogous diagram after optimization, and the comparison of two figures can be seen
Out, the optimization method of the application has achieved the purpose that improve trench corner.
The beneficial effect of the application is: by selective oxidation mode, topography optimization has been carried out to the top of the groove, to make device
The yield of part on the whole is promoted, and device parameters are stablized；It can solve the energy that equipment does not have the round and smooth processing in turning simultaneously
Power and limited problem, to improve the top of the groove turning shape under the premise of not needing to increase expensive etching groove equipment
Looks reduce processing procedure cost.
Above to a kind of optimization method of power device groove pattern provided by the embodiment of the present application, detailed Jie has been carried out
It continues.The description of the example is only used to help understand the method for the present application and its core ideas；Meanwhile for this field
Those skilled in the art, according to the thought of the application, there will be changes in the specific implementation manner and application range, to sum up institute
It states, the contents of this specification should not be construed as limiting the present application.
As used some vocabulary to censure specific components in the specification and claims.Those skilled in the art answer
It is understood that different vendor may call the same component with different nouns.This specification and claims are not with title
Difference as the mode for distinguishing component, but with the difference of component functionally as the criterion of differentiation.Such as in the whole text
The "comprising" of specification and claim mentioned in is an open language, therefore should be construed to " including but not limited to ".
Specification subsequent descriptions are to implement the better embodiment of the application, and so the description is being with the rule for illustrating the application
Purpose is not intended to limit the scope of the present application.The protection scope of the application is as defined by the appended claims.
It should also be noted that, the terms "include", "comprise" or its any other variant are intended to nonexcludability
Include, so that commodity or system including a series of elements not only include those elements, but also including not clear
The other element listed, or further include for this commodity or the intrinsic element of system.In the feelings not limited more
Under condition, the element that is limited by sentence "including a ...", it is not excluded that in the commodity or system for including the element also
There are other identical elements.
Above description shows and describes several preferred embodiments of the present application, but as previously described, it should be understood that the application
Be not limited to forms disclosed herein, should not be regarded as an exclusion of other examples, and can be used for various other combinations,
Modification and environment, and the above teachings or related fields of technology or knowledge can be passed through in application contemplated scope described herein
It is modified.And changes and modifications made by those skilled in the art do not depart from spirit and scope, then it all should be in this Shen
It please be in the protection scope of appended claims.
Claims (10)
1. a kind of optimization method of power device groove pattern, step include:
S1: one layer of pad oxygen oxide layer is grown in sample surfaces；
S2: one layer of mask layer is deposited in the pad oxygen oxide layer；
S3: photoetching is carried out with the sample that deposited the mask layer to grown the pad oxygen oxide layer；
S4: the sample after photoetching is performed etching；
S5: etching groove is carried out to the sample after etching；
S6: the growth of thermal oxide layer is carried out to the sample after etching groove, grows one layer of thermal oxide layer；
S7: corrode to the sample after the thermal oxide layer has been grown.
2. the optimization method of power device groove pattern according to claim 1, it is characterised in that: the pad oxygen oxide layer
With a thickness of
3. the optimization method of power device groove pattern according to claim 1 or claim 2, it is characterised in that: the mask layer is
Thickness isSi3N4Mask layer.
4. the optimization method of power device groove pattern according to claim 1 or claim 2, it is characterised in that: the thermal oxide layer
With a thickness of
5. the optimization method of power device groove pattern according to claim 3, it is characterised in that: the thermal oxide layer thickness
For
6. the optimization method of power device groove pattern according to claim 1, it is characterised in that: the S4 uses oxide layer
Dry etching machine performs etching the sample after photoetching.
7. the optimization method of power device groove pattern according to claim 1, it is characterised in that: use groove in the S5
Dry etching machine carries out etching groove to the sample after etching.
8. the optimization method of power device groove pattern according to claim 1, it is characterised in that: use BOE in the S7
Medical fluid is corroded.
9. according to claim 1-2, optimization method of any power device groove pattern of 5-8, it is characterised in that: growth institute
It is cleaned before stating pad oxygen oxide layer and/or before the growth thermal oxide layer；It is gone after being performed etching to the sample
Glue cleaning；Groove cleaning is carried out after carrying out etching groove to the sample.
10. a kind of power device obtained using any optimization method of claim 1-2,5-8, it is characterised in that: described
The silicon chip surface of power device successively has pad oxygen oxide layer, mask layer inside-out, has hot oxygen in the groove of the silicon wafer
Change layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810134748.9A CN110137082A (en) | 2018-02-09 | 2018-02-09 | A kind of optimization method of power device groove pattern |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810134748.9A CN110137082A (en) | 2018-02-09 | 2018-02-09 | A kind of optimization method of power device groove pattern |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0689884A (en) * | 1991-04-09 | 1994-03-29 | Samsung Electron Co Ltd | Element isolation method of semiconductor device |
| TW461025B (en) * | 2000-06-09 | 2001-10-21 | Nanya Technology Corp | Method for rounding corner of shallow trench isolation |
| US20040077152A1 (en) * | 1999-06-01 | 2004-04-22 | Norio Ishitsuka | Process for producing semiconductor device and semiconductor device produced thereby |
| CN102184862A (en) * | 2011-04-08 | 2011-09-14 | 上海先进半导体制造股份有限公司 | Method for etching grid groove of groove power device |
| CN103632939A (en) * | 2012-08-15 | 2014-03-12 | 上海华虹宏力半导体制造有限公司 | Method for optimizing top rounded corner of power device groove |
-
2018
- 2018-02-09 CN CN201810134748.9A patent/CN110137082A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0689884A (en) * | 1991-04-09 | 1994-03-29 | Samsung Electron Co Ltd | Element isolation method of semiconductor device |
| US20040077152A1 (en) * | 1999-06-01 | 2004-04-22 | Norio Ishitsuka | Process for producing semiconductor device and semiconductor device produced thereby |
| TW461025B (en) * | 2000-06-09 | 2001-10-21 | Nanya Technology Corp | Method for rounding corner of shallow trench isolation |
| CN102184862A (en) * | 2011-04-08 | 2011-09-14 | 上海先进半导体制造股份有限公司 | Method for etching grid groove of groove power device |
| CN103632939A (en) * | 2012-08-15 | 2014-03-12 | 上海华虹宏力半导体制造有限公司 | Method for optimizing top rounded corner of power device groove |
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Application publication date: 20190816 |