CN110136763A - The method for reading resistive memory device - Google Patents
The method for reading resistive memory device Download PDFInfo
- Publication number
- CN110136763A CN110136763A CN201811365709.6A CN201811365709A CN110136763A CN 110136763 A CN110136763 A CN 110136763A CN 201811365709 A CN201811365709 A CN 201811365709A CN 110136763 A CN110136763 A CN 110136763A
- Authority
- CN
- China
- Prior art keywords
- voltage
- current
- electric current
- storage unit
- scanning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000003860 storage Methods 0.000 claims abstract description 136
- 238000005259 measurement Methods 0.000 claims description 73
- 230000005611 electricity Effects 0.000 claims description 23
- 238000009530 blood pressure measurement Methods 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 239000011651 chromium Substances 0.000 description 8
- 239000010955 niobium Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000009466 transformation Effects 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229910000473 manganese(VI) oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 229910002938 (Ba,Sr)TiO3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910002741 Ba0.5Sr0.5Co0.8Fe0.2O3-δ Inorganic materials 0.000 description 1
- 229910002742 Ba0.5Sr0.5Co0.8Fe0.2O3−δ Inorganic materials 0.000 description 1
- 229910005925 GexSe1-x Inorganic materials 0.000 description 1
- 229910002269 La1–xCaxMnO3 Inorganic materials 0.000 description 1
- 229910002273 La1–xSrxCoO3 Inorganic materials 0.000 description 1
- 229910002254 LaCoO3 Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910003098 YBa2Cu3O7−x Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- -1 iron oxide Metal oxide Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910014031 strontium zirconium oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0038—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0045—Read using current through the cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/15—Current-voltage curve
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/76—Array using an access device for each cell which being not a transistor and not a diode
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
Abstract
The invention discloses a kind of methods for reading resistive memory device.In the method according to a kind of reading resistive memory device of one embodiment, prepare the storage unit including selection element and variable resistor element.Selection element shows rapid reversion on the current-voltage scanning curve for storage unit.Determination will be applied to storage unit within the voltage range that selection element maintains on state first reads voltage and second and reads voltage.The size of second reading voltage shows to select in the voltage range that rapid reversion is less than the size of the first reading voltage and the second reading voltage in selection element.Apply the first reading voltage and measures first unit electric current to storage unit.Apply the second reading voltage and measures second unit electric current to storage unit.The resistance states of storage in the memory unit are determined based on first unit electric current and second unit electric current.
Description
Cross reference to related applications
This application claims 2 months 2018 numbers submitted for 8th be 10-2018-00158587 South Korea patent application it is excellent
It first weighs, by quoting whole be incorporated herein.
Technical field
The various embodiments of the disclosure are related to a kind of resistive memory device in general, more particularly, to a kind of reading
The method for taking the data being stored in resistive memory device.
Background technique
In general, resistive memory device is following device: in the non-volatile memory material being located in storage unit
Cause resistance variations in layer and stores the device of different data according to resistance states.Resistive memory device may include
Resistive random access stores (RAM) device, phase transformation RAM device, magnetic ram device etc..
Recently, in order to realize the highly integrated of memory device, such as three-dimensional cell structure of crosspoint array structure
As resistive memory device cellular construction and be suggested.As an example, crosspoint array structure can have such as lower unit
Structure, cylindrical unit is arranged between the electrode intersected with Different Plane in the cellular construction.
Summary of the invention
Disclose a kind of method of reading resistive memory device according to one aspect of the disclosure.Reading resistance-type
In the method for memory device, prepare the storage unit including selection element and variable resistor element.At this point, the selection element exists
It is about rapid reversion is shown on the current-voltage scanning curve of the storage unit.It is applied to the of the storage unit
One, which reads voltage and second, reads voltage within the voltage range that the selection element maintains on state.Described second reads
The size of voltage is less than the size of the first reading voltage and the second reading voltage is shown in the selection element
In the voltage range that the rapid reversion is.Apply the first reading voltage to the storage unit to measure first unit electricity
Stream.Apply described second and reads voltage to the storage unit to measure second unit electric current.Based on the first unit electric current
The resistance states being stored in the storage unit are determined with the second unit electric current.
Detailed description of the invention
Fig. 1 is the block diagram for schematically showing the resistive memory device of one embodiment according to the disclosure.
Fig. 2 is the memory cell array for schematically showing the resistive memory device of one embodiment according to the disclosure
View.
Fig. 3 be show the resistive memory device of one embodiment according to the disclosure memory cell array structure it is vertical
Body figure.
Fig. 4 is that the unit for the memory cell array of resistive memory device for showing one embodiment according to the disclosure is deposited
The perspective view of storage unit.
Fig. 5 is the stream for schematically showing the method for the reading resistive memory device according to one embodiment of the disclosure
Cheng Tu.
Fig. 6 A is according to the sectional view of the selection element of the resistive memory device of one embodiment of the disclosure, and Fig. 6 B is
The figure of the current-voltage scan characteristic of the selection element of the resistive memory device of one embodiment according to the disclosure is shown.
Fig. 7 A and Fig. 7 B are the storages for schematically showing the resistive memory device of one embodiment according to the disclosure
The figure of the output voltage according to current scanning in unit.
Fig. 8 A and Fig. 8 B are the storages for schematically showing the resistive memory device of one embodiment according to the disclosure
The figure of the output electric current according to voltage scanning in unit.
Fig. 9 is to schematically show in one embodiment of the disclosure to read voltage to resistance-type memory for applying
The view of the input pulse of the storage unit of part.
Figure 10 is to schematically show storing for applying reading voltage to resistance-type in another embodiment of the present disclosure
The view of the input pulse of the storage unit of device.
Figure 11 is that the use shown in one embodiment of the disclosure comes from the measurement of the storage unit of resistive memory device
Cell current determine the view of the method for resistance states.
Specific embodiment
Various embodiments are described hereinafter with reference to attached drawing now.In the accompanying drawings, for the clearness of diagram, layer and
The size in region may be exaggerated.Attached drawing is described relative to the viewpoint of observer.If element is referred to as being located at another
On element, then it can be understood as the element in other elements or other element can be inserted into the element
Between the other elements.Through the specification, identical appended drawing reference refers to identical element.
In addition, otherwise the statement of the word of singular should be managed unless clearly in addition using within a context
Solution is at the plural form including the word.It will be appreciated that term " includes " or " having " be intended to specific characteristic, quantity, step,
The presence of operation, element, part or combinations thereof, rather than it is used to exclude one or more other features, quantity, step, operation, group
A possibility that presence or increase of part, part or combinations thereof.In addition, in the method for execution or manufacturing method, unless in context
In explicitly describe particular order, otherwise constitute this method each process occur order can be with defined order not
Together.In other words, each process can be executed in a manner of identical with the order of statement, can substantially simultaneously be executed, or
Person can execute in reverse order.
The threshold value handover operation of selection element described in this specification can be expressed as follows handover operation: grasp in the switching
In work, when external voltage is applied to selection element, the voltage of application increase to threshold voltage or it is higher when selection element
Conducting, and selection element is turned off from state when the voltage of application is again reduced under threshold voltage.However, when outside
When voltage is removed, selection element can remain at off state.That is, threshold value handover operation can be for volatibility
Non-memory handover operation.
Variable resistor element described in this specification can be expressed as follows element, what which can apply according to outside
The size or polarity of voltage and changeably there are two or more resistance states for distinguishing each other.Variable resistor element can
Variable resistance state is stored using in nonvolatile manner as logic data values.
In the present specification, variable resistor element or " low resistance state " and " high resistance state " of selection element can be by
It is construed to the relative concept of mutual resistance states for identification, rather than is interpreted as having the resistance states of specific resistance value.
As an example, " low resistance state " and " high resistance state " of variable resistor element can correspond respectively to data information " 0 " or
"1".In addition, " high resistance state " of selection element can indicate off state, and " low resistance state " can indicate conducting shape
State.
Fig. 1 is the block diagram for being schematically illustrated the resistive memory device of one embodiment according to the disclosure.Referring to figure
1, resistive memory device 1 may include memory cell array 1000 and sensing amplifier 2000.
Memory cell array 1000 may include multiple non-volatile memory cells.When multiple non-volatile memory cells it
In predetermined storage unit it is selected when, sensing amplifier 2000 can sense the data being written in the storage unit chosen,
And the data of sensing can be amplified to convert thereof into binary logical values.In addition, sensing amplifier 2000 can will turn
Binary logical values after changing are exported to the buffer of rear class.In one embodiment, the reading electricity of external offer is provided
Press VrWith reference current Iref.Read voltage VrIt is provided to memory cell array 1000.Sensing amplifier 2000 can be in response to
Read voltage VrAnd the electric current generated in storage unit is measured, and by the electric current of measurement and reference current IrefIt is compared, with defeated
The logical value of data in the memory unit is stored out.
Fig. 2 is the memory cell array for schematically showing the resistive memory device of one embodiment according to the disclosure
View.Referring to fig. 2, memory cell array 1000 can have crosspoint array structure.Specifically, memory cell array 1000
It can have the first conducting wire 10 extended along first direction (for example, the direction x) and along the second direction not parallel with first direction
The second conducting wire 20 that (for example, the direction y) extends.Each of first conducting wire 10 and the second conducting wire 20 may include multiple First Lines
10_1,10_2 and 10_3 and multiple second line 20_1,20_2,20_3 and 20_4.Multiple storage units can be set first
At the region that line (10_1,10_2 and 10_3) intersects with corresponding second line (20_1,20_2,20_3 and 20_4).Although Fig. 2 shows
Gone out three First Lines 10_1,10_2 and 10_3 and four second lines 20_1,20_2,20_3 and 20_4, but First Line and
Second-line quantity can be without being limited thereto.First Line and second-line various other quantity are possible.
Storage unit 30 may include the selection element 31 being serially connected and variable resistor element 32.In some implementations
In example, during the read operation to storage unit 30, selection element 31 can be held in response to the external reading voltage applied
Row threshold value handover operation.Therefore, because of the sneak-out current (sneak current) occurred between adjacent storage unit 30 or leakage
The available inhibition of read operation mistake caused by electric current.Selection element 31 may include such as transistor, diode, tunnel
Stop (tunnel barrier) device, ovonic threshold switch (OTS) and metal-insulator-metal switch etc..
Variable resistor element 32 can be the electric device of storage non-volatile logic signal, the non-volatile logic signal root
Change according to the resistance that internal resistance changes material layer and changes.Variable resistor element 32 may include such as resistance-type RAM, phase transformation
RAM or magnetic ram.
Fig. 3 be show the resistive memory device of one embodiment according to the disclosure memory cell array structure it is vertical
Body figure.Fig. 4 is the perspective view for showing the unit storage unit of memory cell array of Fig. 3.Hereinafter, reference Fig. 3 and Fig. 4,
Be described below example: wherein the variable resistor element of storage unit 30 is resistive memory element, and the choosing of storage unit 30
Selecting element is with the first metal electrode/insulating layer/second metal electrode structure threshold switch.However, the invention of the disclosure
Conceive without being limited thereto, can apply or using above-mentioned various variable resistor elements and selection element.
Referring to Fig. 3, memory cell array 1000 may include along first direction (that is, the direction x) extend the first conducting wire 10,
The storage unit 30 of the second conducting wire 20 that (that is, the direction y) extends and column construction form in a second direction, the storage unit 30
Extend in the z-direction and is arranged in the overlapping region between the first conducting wire 10 and the second conducting wire 20.First conducting wire 10 and second is led
Each of line 20 may include multiple First Line 10_1,10_2,10_3,10_4 and multiple second line 20_1,20_2,20_3,
20_4、20_5。
Referring to fig. 4, storage unit 30 may include the selection element 31 being serially connected and variable resistor element 32.Choosing
Selecting element 31 may include lower electrode layer 110, insulating layer 120 and intermediate electrode layer 210.During variable resistor element 32 may include
Between electrode layer 210, resistance-type accumulation layer 220 and upper electrode layer 230.At this point, intermediate electrode layer 210 can be by 31 He of selection element
Variable resistor element 32 shares.
In storage unit 30, each of lower electrode layer 110, intermediate electrode layer 210 and upper electrode layer 230 may include
Conductive material.Specifically, conductive material may include such as metal, conductive nitride, electroconductive oxide.As showing
Example, each of lower electrode layer 110, intermediate electrode layer 210 and upper electrode layer 230 may include gold (Au), aluminium (Al), platinum
(Pt), copper (Cu), silver (Ag), ruthenium (Ru), titanium (Ti), iridium (Ir), tungsten (W), titanium nitride (TiN), tantalum nitride (TaN), ruthenium-oxide
(RuO2At least one of) etc..
The insulating layer 120 of selection element 31 may include silica, silicon nitride, metal oxide, metal nitride or its
In the combination of two or more.As an example, insulating layer 120 may include aluminium oxide, zirconium oxide, hafnium oxide, tungsten oxide,
Titanium oxide, nickel oxide, copper oxide, manganese oxide, tantalum oxide, niobium oxide or iron oxide etc..Insulating layer 120 may include being unsatisfactory for
Learn the compound of metering ratio.Insulating layer 120 can have non crystalline structure.
In one embodiment, the point of the trap as caused by the non-stoichiometric of insulating layer 120 can produce and be distributed in
In insulating layer 120, by electric conductivity carrier capture in insulating layer 120.Make a reservation for when the voltage that outside applies increases to be equal to
Threshold voltage or it is higher when, the electric conductivity carrier that is captured at trap point can via insulating layer 120, along by external voltage
The electric field of formation conducts.Therefore, selection element 31 can be connected.On the other hand, when the voltage that outside applies is decreased below
When predetermined threshold voltage, conducting carriers can be captured at trap point, the available inhibition of the conduction of electric conductivity carrier.
Therefore, selection element 31 can be turned off from state.In one embodiment, trap point can be by being injected into insulating layer 120
In dopant generate.
The a variety of materials for the energy level that generation in insulating layer 120 can receive electric conductivity carrier may be used as adulterating
Object.As an example, dopant may include aluminium (Al), lanthanum (La), niobium when insulating layer 120 includes silicon oxide or silicon nitride
(Nb), in vanadium (V), tantalum (Ta), tungsten (W), chromium (Cr), molybdenum (Mo), boron (B), nitrogen (N), carbon (C), phosphorus (P) and arsenic (As) at least
It is a kind of.As another example, when insulating layer 120 includes aluminium oxide or aluminium nitride, dopant may include titanium (Ti), copper
(Cu), zirconium (Zr), hafnium (Hf), niobium (Nb), vanadium (V), tantalum (Ta), tungsten (W), chromium (Cr), molybdenum (Mo), boron (B), nitrogen (N), carbon (C),
At least one of phosphorus (P) and arsenic (As).In one embodiment, when insulating layer 120 includes the dopant of predetermined concentration, such as
Below with reference to described in Fig. 6 A and Fig. 6 B, selection element 31 can show to return suddenly on current-voltage scanning curve
(snap-back) behavior.Rapid reversion is that can indicate following phenomenon: being surveyed when while scanning input current to selection element 31
When measuring output voltage, output voltage temporarily reduces when input current reaches predetermined conduction threshold electric current.
The resistance-type accumulation layer 220 of variable resistor element 32 may include its resistance according to the voltage that outside applies and in height
The material changeably changed between resistance states and low resistance state.As an example, resistance-type accumulation layer 220 may include such as
Titanium oxide, aluminium oxide, nickel oxide, copper oxide, zirconium oxide, manganese oxide, hafnium oxide, tungsten oxide, tantalum oxide, niobium oxide or iron oxide
Metal oxide.As another example, resistance-type accumulation layer 220 may include such as PCMO (Pr0.7Ca0.3MnO3),LCMO
(La1-xCaxMnO3),BSCFO(Ba0.5Sr0.5Co0.8Fe0.2O3-δ),YBCO(YBa2Cu3O7-x),(Ba,Sr)TiO3(Cr, Nb mix
It is miscellaneous), SrZrO3(Cr, V doping), (La, Sr) MnO3,Sr1-xLaxTiO3,La1-xSrxFeO3,La1-xSrxCoO3,SrFeO2.7,
LaCoO3,RuSr2GdCu2O3Or YBa2Cu3O7Deng perovskite-based material.As another example, resistance-type accumulation layer 220 can
To include such as GexSe1-xThe seleno material or such as Ag of (Ag, Cu, Te doping)2S、Cu2S, the metal vulcanization of CdS, ZnS etc.
Object.
Fig. 5 is the stream for schematically showing the method for the reading resistive memory device according to one embodiment of the disclosure
Cheng Tu.Fig. 6 A is according to the sectional view of the selection element of the resistive memory device of one embodiment of the disclosure, and Fig. 6 B is
The figure of the current-voltage scan characteristic of the selection element of the resistive memory device of one embodiment according to the disclosure is shown.
Fig. 7 A and Fig. 7 B be schematically show it is in the storage unit of the resistive memory device of one embodiment according to the disclosure,
According to the figure of the output voltage of current scanning.Fig. 8 A and Fig. 8 B are the electricity for schematically showing one embodiment according to the disclosure
The figure of output electric current in the storage unit of resistive memory device, according to voltage scanning.According to one embodiment of the disclosure
The method of reading resistive memory device the above-mentioned resistive memory device 1 described in conjunction with Fig. 1 to Fig. 4 can be used to retouch
It states.
Referring to Fig. 5, the method for reading resistive memory device 1 can execute as follows.As described in S110, it can prepare
Including selection element 31 and the storage unit of variable resistor element 32 30.As described in S120, it can obtain about storage unit
30 current-voltage scanning curve.It, can be in voltage selection element 31 maintenance or be kept on as described in S130
Within the scope of determination to be applied to storage unit 30 first read voltage and second read voltage.As described in S140, first
Reading voltage, which can be applied to storage unit 30 and first unit electric current, to be measured.As described in S150, second is read
Taking voltage that can be applied to storage unit 30 and second unit electric current can be measured.As described in S160, it is stored in and deposits
Resistance states in storage unit 30 can be determined based on first unit electric current and second unit electric current.
Hereinafter, the method that reading resistive memory device 1 will be described in detail referring to Fig. 5 to Fig. 9.Resistance-type storage
Device 1 includes the first conducting wire extended in a first direction and (second direction and first direction are not parallel) extends in a second direction
Second conducting wire.Storage unit 30 is placed along third direction to bridge the first conducting wire and the second conducting wire.
Prepare storage unit
Referring to the S110 of Fig. 5, can prepare include selection element 31 and variable resistor element 32 storage unit 30.Selection
Element 31 can execute threshold value handover operation.Variable resistor element 32 can store internal resistance value in nonvolatile manner.
Obtain current-voltage scanning curve
Referring to the S120 of Fig. 5, the current-voltage scanning curve of storage unit 30 can be obtained.Current-voltage scanning curve
Can be curve 70a and 70b, curve 70a and 70b by scanning when apply input current to storage unit 30 and measurement come
It is obtained from the output voltage of storage unit 30, as shown in figures 7 a and 7b.Optionally, current-voltage scanning curve can be with
For curve 80a and 80b, curve 80a and 80b is by applying input voltage in scanning to storage unit 30 and measurement from depositing
The output electric current of storage unit 30 and obtain, as shown in fig. 8 a and fig. 8b.
In one embodiment, the rapid reversion of selection element 31 is the electricity for being reflected in selection element 31 shown in Fig. 6 B
In stream-voltage sweep 60, and be reflected in storage unit 30 shown in Fig. 7 A current-voltage scanning curve first
In scanning curve 70a.Rapid reversion is to be referred to Fig. 6 A and Fig. 6 B, scanned using the current-voltage measured from selection element 31
Curve 60 illustrates.By scanning when in fig. 6 shown in selection element 31 lower electrode layer 110 and intermediate electrode layer 210
Between apply the voltage output of input current and measurement from selection element 31, the current-voltage that can be obtained in Fig. 6 B sweeps
Retouch curve 60.
In one embodiment, as described above, insulating layer 120 may include silica, silicon nitride, metal oxide, gold
Belong to nitride or in which the combination of two or more.Insulating layer 120 may include predetermined doped object to generate trap point.It mixes
Sundries may include for example aluminium (Al), lanthanum (La), niobium (Nb), vanadium (V), tantalum (Ta), tungsten (W), chromium (Cr), molybdenum (Mo), boron (B),
At least one of nitrogen (N), carbon (C), phosphorus (P) and arsenic (As), or in which the combination of two or more.
Referring to Fig. 6 A and Fig. 6 B, the method for applying input current between lower electrode layer 110 and intermediate electrode layer 210 can be with
It is executed by scanning input current while input current increases since 0A.Output voltage and input current are proportionally
Increase, until the input current of application reaches conduction threshold electric current IthUntil.Selection element 31 can be in conduction threshold electric current Ith
Under input current within the scope of maintain high resistance state.
When input current reaches conduction threshold electric current IthWhen, output voltage can quickly reduce.The reduction of output voltage can be with
It is continuously, to keep electric current I until input current reaches conductinghUntil.With conduction threshold electric current IthCorresponding voltage can be with
Referred to as on state threshold voltage Vth, and electric current I is kept with conductinghCorresponding output voltage is properly termed as conducting and keeps voltage Vh。
As described above, when input current is equal to or higher than conduction threshold electric current IthWhen output voltage from state threshold voltage VthTo conducting
Keep voltage VhThe phenomenon that reduction, is properly termed as rapid reversion.
Referring to Fig. 6 B, after rapid reversion is to occur, even if input current increases, output voltage will not be increased above and be led
Logical threshold voltage Vth.That is, when input current reaches conduction threshold electric current IthWhen, selection element 31 can be connected, so that selection member
The resistance states of part 31 can be switched to low resistance state from high resistance state.In addition, when input current is equal to or higher than conducting
Threshold current IthWhen, selection element 31 is maintained at low resistance state.
As shown in the current-voltage scanning curve of Fig. 6 B, after rapid reversion is to occur, the electric current no matter applied is such as
What, the output voltage of selection element 31 can be maintained within predetermined voltage range.Conducting keeps voltage VhIt can indicate to select
Select the minimum output voltage that element 31 rests on state.At this point, on current-voltage scanning curve 60, conduction threshold electricity
Press VthVoltage V is kept with conductinghBetween voltage difference be properly termed as suddenly wire back pressure △ VSB。
Referring to Fig. 7 A and Fig. 7 B, these current-voltage scanning curves about storage unit 30 can be by scanning
Apply input current to storage unit 30 and output voltage of the measurement from storage unit 30 to obtain.Current-voltage scanning
Curve may include current-voltage measurement part 710a when variable resistor element 32 is in low resistance state and 710b and
Variable resistor element 32 is in current-voltage measurement part 720a and 720b when high resistance state.Furthermore, it is possible to by electric current-
Voltage sweep is classified as the first scanning figure 70a and the second scanning figure 70b.First scanning figure 70a is shown since 0A
Continuously enlarge to storage unit 30 apply electric current size while measurement output voltage as a result, as shown in Figure 7A.The
Two scanning figure 70b show measurement output electricity while being continuously reduced the size of the electric current applied from scheduled current to 0A
Pressure as a result, as shown in fig.7b.In one embodiment, scheduled current can be current-voltage measurement shown in Fig. 7 A
The conducting of part 720a keeps electric current IhWith setting electric current IsetBetween electric current.In another embodiment, scheduled current can be
With the setting voltage V of current-voltage measurement part 710a shown in Fig. 7 AsetCorresponding electric current.
Meanwhile referring to Fig. 8 A and Fig. 8 B, these current-voltage scanning curves about storage unit 30 can be by sweeping
Apply input voltage when retouching to storage unit and output electric current of the measurement from storage unit 30 to obtain.Current-voltage is swept
Retouching curve may include the current-voltage measurement part 810a and 810b when variable resistor element 32 is in low resistance state,
And current-voltage measurement part 820a and 820b of the variable resistor element 32 when being in high resistance state.Furthermore, it is possible to by electric
Stream-voltage sweep is classified as the first scanning figure 80a and the second scanning figure 80b.First scanning figure 80a can be shown from 0V
Measurement output electric current as a result, as shown in Figure 8 A while starting to continuously enlarge the voltage applied to storage unit 30.Second
Scanning figure 80b can show measurement output electric current while being continuously reduced the size of the voltage of application from predetermined voltage to 0V
As a result, as shown in figure 8B.In one embodiment, predetermined voltage can be current-voltage measurement portion shown in Fig. 8 A
Divide the second on state threshold voltage V of 820ath2’With setting voltage Vset’Between voltage.In another embodiment, predetermined voltage can
Think the setting electric current I with current-voltage measurement part 810a shown in Fig. 8 As’Corresponding voltage.
Determine that the first reading voltage and second reads voltage
Referring to the S130 of Fig. 5, can be determined within the voltage range in the conductive state of selection element 31 single in storage
First applied in the read operation of member 30 reads voltage and second and reads voltage.In one embodiment, the first reading is determined
The first scanning figure 70a of current-voltage scanning curve shown in Fig. 7 A and Fig. 7 B can be used in voltage and the second reading voltage
It is executed with the second scanning figure 70b.Optionally, in another embodiment, determine that the first reading voltage and the second reading voltage can
It is held with using the first scanning figure 80a and the second scanning figure 80b of current-voltage scanning curve shown in Fig. 8 A and Fig. 8 B
Row.
Firstly, referring to Fig. 7 A, for storage unit 30, can the size of the electric current of application is continuously enlarged from 0A it is same
When measure output voltage.Referring to current-voltage measurement part 710a, when variable resistor element 32 is in low resistance state, choosing
Conduction threshold electric current I can be reached in the size of the electric current of application by selecting element 31thWhen be connected.Until the size of the electric current of application reaches
Electric current I is kept to conductinghUntil, output voltage can be from the first on state threshold voltage Vth1It is reduced to the first conducting and keeps voltage
Vh1.Then, when the size of the electric current of application keeps electric current I from conductinghWhen starting to increase, the output voltage of measurement can be along electricity
Stream-voltage measuring section 710a increases.Since selection element 31 is in the conductive state, the current-voltage of storage unit 30
Characteristic can be determined according to the resistance states for the variable resistor element 32 for maintaining low resistance state.
Meanwhile current-voltage measurement part 720a when being in high resistance state referring to variable resistor element 32, selection member
Part 31 can reach conduction threshold electric current I in the electric current of applicationthWhen be connected.Next, until the size of the electric current of application reaches
Conducting keeps electric current IhUntil, output voltage can be from the second on state threshold voltage Vth2It is reduced to the second conducting and keeps voltage Vh2。
Then, when the size of the electric current of application keeps electric current I from conductinghWhen starting to increase, the output voltage of measurement can be along electric current-electricity
Pressure measurement part 720a increases.Since selection element 31 is in the conductive state, the I-E characteristic of storage unit can be with
It is determined according to the resistance states of the variable resistor element 32 in high resistance state.
Next, when the size of the electric current applied reaches setting electric current IsetWhen, it can occur in variable resistor element 32
Setting operation.It is operated by setting, the resistance states of variable resistor element 32 can change into low resistance shape from high resistance state
State.Specifically, until the size of the electric current in application from setting electric current IsetReach predetermined high current IcUntil, output voltage can
With from the setting voltage V on the 720a of current-voltage measurement partsetIt is reduced to the predetermined voltage of current-voltage measurement part 710a
Vc.Then, when the size of the electric current of application is from scheduled current IcWhen increase, the output voltage of measurement can be along expression low resistance shape
The current-voltage measurement part 710a of state and it is continuous.
Referring to Fig. 7 A, be applied to storage unit 30 first reads voltage Vr1It can be selected within following voltage range:
The on state threshold voltage V of selection element 31 when being in high resistance state higher than variable resistor element 32th2And lower than can power transformation
The setting voltage V of resistance element 32set.As an example, first reads voltage when variable resistor element 32 is in low resistance state
Vr1Can be and the first low resistance point P on the 710a of current-voltage measurement partL1Corresponding voltage, and when variable resistance member
When part 32 is in high resistance state, first reads voltage Vr1It can be high electric with first on the 720a of current-voltage measurement part
Hinder point PH1Corresponding voltage.In this way, first reads voltage V when selection element 31 is connectedr1It can be in variable resistor element
It is selected within the voltage range that 32 resistance states can be distinguished from each other.
Referring to Fig. 7 B, the size of the electric current applied is being read into electric current I from corresponding firstPLAnd IPH(the two corresponds to
Determining first reads voltage Vr1) while be continuously reduced to 0A, output voltage can be measured.As a result, can obtain about depositing
Second scanning figure 70b of the current-voltage scanning curve of storage unit 30.
Current-voltage measurement part 710b when low resistance state is in referring to variable resistor element 32, when the electricity of application
The size of stream reads electric current I from firstPLWhen reduction, the size of output voltage can reduce along current-voltage measurement part 710b.
When the electric current of application reaches shutdown threshold current IoffWhen, selection element 31 can turn off.That is, the resistance states of selection element 31
High resistance state can be changed into from low resistance state.When the electric current of application is reduced to shutdown threshold current IoffUnder when, storage
The resistance characteristic of unit 30 can show the high resistance state along current-voltage measurement part 710b.Current-voltage measurement portion
On point 710b with shutdown threshold current IoffCorresponding output voltage is properly termed as the first shutdown threshold voltage Voff1.One
Shutdown threshold current I in a embodiment, on the current-voltage measurement part 710b of Fig. 7 BoffIt can be the electric current-with Fig. 7 A
Conducting on voltage measuring section 710a keeps electric current IhSubstantially the same current value.
Meanwhile current-voltage measurement part 720b when being in high resistance state referring to variable resistor element 32, if applied
The size of the electric current added reads electric current I from firstPHReduce, then output voltage can subtract along current-voltage measurement part 720b
It is small.However, when the electric current applied reaches shutdown threshold current IoffWhen, selection element 31 can turn off.That is, selection element 31
Resistance states can change into high resistance state from low resistance state.When the electric current of application is reduced to shutdown threshold current IoffIt
When lower, the resistance characteristic of storage unit 30 can show the high resistance state along current-voltage measurement part 720b.Electric current-
On voltage measuring section 720b with shutdown threshold current IoffCorresponding output voltage is properly termed as the second shutdown threshold voltage
Voff2.In one embodiment, the shutdown threshold current I on the current-voltage measurement part 720b of Fig. 7 BoffCan have with
Conducting on the current-voltage measurement part 710a of Fig. 7 A keeps electric current IhSubstantially the same current value.Therefore, the electricity of Fig. 7 B
Stream-voltage measuring section 710b and 720b can have identical shutdown threshold current Ioff。
In this embodiment, be applied to storage unit 30 second reads voltage Vr2It can be selected among following voltage range
It selects: of the selection element 31 when on the second scanning figure 70b higher than Fig. 7 B, variable resistor element 32 is in low resistance state
One shutdown threshold voltage Voff1, and be lower than on the first scanning figure 70a of Fig. 7 A, variable resistor element 32 and be in low resistance state
When selection element 31 the first on state threshold voltage Vth1.For convenience, the first scanning figure 70a's includes the first conducting
Threshold voltage Vth1With the second on state threshold voltage Vth2Part as dotted line add in figure 7b.As an example, when can power transformation
When resistance element 32 is in low resistance state, second reads voltage Vr2It can correspond on the 710b of current-voltage measurement part
Two low resistance point PL2, and when variable resistor element 32 is in high resistance state, second reads voltage Vr2It can correspond to electricity
The second high resistance point P on stream-voltage measuring section 710bH2。
In another embodiment, will be come using the first scanning figure 80a shown in Fig. 8 A and Fig. 8 B and the second scanning figure 80b
Description determines the first method for reading voltage and the second reading voltage.Referring to Fig. 8 A, can by about storage unit 30, apply
Measurement output electric current while the size of the voltage added is continuously enlarged from 0V.Firstly, being in low electricity referring to variable resistor element 32
Current-voltage measurement part 810a when resistance state reaches the first on state threshold voltage V in the size of the voltage of applicationth1’When,
Selection element 31 can be connected.When the voltage of application is the first on state threshold voltage Vth1’When, output electric current can be led from first
Logical threshold current Ith1’It is quickly increased to the first conducting and keeps electric current Ih1’.Next, when the size of the voltage applied is from first
On state threshold voltage Vth1’When increase, the electric current of measurement increases along current-voltage measurement part 810a.At selection element 31
It can be according to the variable resistor element for being in low resistance state in the I-E characteristic of on state, therefore storage unit 30
32 resistance states determine.
Meanwhile current-voltage measurement part 820a when being in high resistance state referring to variable resistor element 32, applying
The size of voltage reach the second on state threshold voltage Vth2’When, selection element 31 can be connected.When the voltage of application is second
On state threshold voltage Vth2’When, output electric current can be from the second conduction threshold electric current Ith2’It increases to the second conducting and keeps electric current
Ih2’.Next, when the size of the voltage applied is from the second on state threshold voltage Vth2’When increase, the electric current of measurement can be along electricity
Stream-voltage measuring section 820a increases.Since selection element 31 is in the conductive state, the current-voltage of storage unit 30
Characteristic can be determined according to the resistance states of the variable resistor element 32 in high resistance state.
Next, when the size of the voltage applied reaches setting voltage VsetWhen, it can occur in variable resistor element 32
Setting operation.In setting operation, the resistance states of variable resistor element 32 can change into low resistance shape from high resistance state
State.Specifically, when the voltage of application reaches setting voltage Vset’When, electric current I can be arranged from conducting in output electric currentset’It increases to
Electric current I is sets’.Next, when apply voltage size from setting voltage Vset’When increase, the electric current of measurement can be along electricity
Stream-voltage measuring section 810a is gradually increased or becomes to be saturated.
In this embodiment, be applied to storage unit 30 first reads voltage Vr1’It can be selected from following voltage range:
On state threshold voltage V when high resistance state is in higher than variable resistor element 32th2’, and setting lower than variable resistor element 32
Set voltage Vset’.As an example, first reads voltage V when variable resistor element 32 is in low resistance stater1’It can correspond to
In the first low resistance point M on the 810a of current-voltage measurement partL1, and when variable resistor element 32 is in high resistance state,
First reads voltage Vr1’It can correspond to the first high resistance point M on the 820a of current-voltage measurement partH1。
Referring to Fig. 8 B, the size of the voltage applied can read into voltage V from determining firstr1’Continuously subtract to 0V
Measurement output electric current while small.As a result, the second scanning of the current-voltage scanning curve about storage unit 30 can be obtained
Figure 80 b.
Firstly, current-voltage measurement part 810b when being in low resistance state referring to variable resistor element 32, works as application
Voltage size from first read voltage Vr1’When reduction, the size for exporting electric current can be along current-voltage measurement part 810b
Reduce.When the voltage of application reaches the first shutdown threshold voltage Voff1’When, selection element 31 can turn off.That is, when the electricity applied
Pressure reaches the first shutdown threshold voltage Voff1’When, as the resistance states of selection element 31 change into high resistance from low resistance state
State, output electric current can quickly reduce.In addition, when the voltage applied is reduced to the first shutdown threshold voltage Voff1’Under when,
The resistance characteristic of storage unit 30 can show the high resistance state along current-voltage measurement part 810b.Implement at one
In example, the first shutdown threshold voltage Voff1’Size and the of the current-voltage measurement part 710b described above by reference to Fig. 7 B
One shutdown threshold voltage Voff1’It is substantially the same.In one embodiment, the first shutdown threshold voltage Voff1’It can be with Fig. 7 A's
First conducting keeps voltage Vh1It is substantially the same.
Meanwhile referring again to Fig. 8 B, even if the voltage of the application about storage unit 30 is reduced to the first scanning of Fig. 8 A
The first on state threshold voltage V on Figure 80 ath1’Under, when the voltage of application is higher than the first on state threshold voltage Voff1’When, selection
Element 31 will not turn off.For the convenience of description, by the first scanning figure 80a including the first conduction threshold Vth1’With the second conducting
Threshold value Vth2’Part be added in Fig. 8 B as dotted line.
However, when the voltage applied turns off threshold voltage V firstoff1’With the first on state threshold voltage Vth1’Between when it is defeated
Electric current can be relatively higher than along the fall off rate of current-voltage measurement part 810b when the voltage applied is higher than the first conducting threshold out
Threshold voltage Vth1’When output electric current along current-voltage measurement part 810b fall off rate.This phenomenon can be construed as
Phenomenon is returned suddenly based on selection element 31.One of the various theories for explaining this phenomenon can be attributed to the path (voltage of application
Be transferred to storage unit 30 via the path) in multiple mos transistor switches.When the voltage of application has the first shutdown threshold
Threshold voltage Voff1’With the first on state threshold voltage Vth1’Between voltage value when, selection element 31 stills remain on state,
And in contrast, the I-E characteristic between the channel layer for the MOS transistor being electrically connected with storage unit 30 can be from crystal
The saturation operation mode of pipe changes into linear operation mode.When MOS transistor work is in linear operation mode, operating current can
Changed with the voltage according to application.Therefore, when the voltage of application is reduced to the first on state threshold voltage Vth1’Under when, source electrode
It is between area and drain region, can be reduced according to the voltage of reduced application by the operating current of channel layer.As a result, when applying
The voltage added is reduced to the first on state threshold voltage Vth1’Under when, the MOS for sending the voltage of application to storage unit 30 is brilliant
The channel resistance of body pipe can increase, so that the actual current measured in the 810b of current-voltage measurement part can reduce.
On the other hand, referring to current-voltage measurement part 820b, wherein variable resistor element 32 is in high resistance state,
When the size of the voltage of application reads voltage V from firstr1’When reduction, the size for exporting electric current can be along current-voltage measurement portion
820b is divided to reduce.When the voltage of application reaches the second shutdown threshold voltage Voff2’When, selection element 31 can turn off.That is, when applying
The voltage added reaches the second shutdown threshold voltage Voff2’When, as the resistance states of selection element 31 are changed into from low resistance state
High resistance state, output electric current can quickly reduce.In addition, when the voltage applied is reduced to the second shutdown threshold voltage Voff2’It
When lower, the resistance characteristic of storage unit 30 can show the high resistance state along current-voltage measurement part 820b.At this point,
In one embodiment, the second shutdown threshold voltage Voff2’The current-voltage measurement that can have and described above by reference to Fig. 7 B
The second shutdown threshold voltage V of part 710boff2Substantially the same value.In one embodiment, the second shutdown threshold voltage
Voff2’Voltage V can be kept with the second conducting of Fig. 7 Ah2It is substantially the same.
In this embodiment, be applied to storage unit 30 second reads voltage Vr2’It can be selected from following voltage range:
The selection element 31 when low resistance state is in higher than on the second scanning figure 80b shown in Fig. 8 B, variable resistor element 32
Shutdown threshold voltage Voff1’, and low electricity is in lower than on the first scanning figure 80a shown in Fig. 8 A, variable resistor element 32
The on state threshold voltage V of selection element 31 when resistance stateth1’.As an example, when variable resistor element 32 is in low resistance shape
When state, second reads voltage Vr2’It can correspond to the second low resistance point M on the 810b of current-voltage measurement partL2, and working as can
When variable-resistance element 32 is in high resistance state, second reads voltage Vr2’It can correspond on the 820b of current-voltage measurement part
The second high resistance point MH2。
First unit electric current and second unit electric current are measured by applying the first reading voltage and the second reading voltage
The the first reading voltage determined as follows and the second reading voltage can be used to execute the reading to storage unit 30
Extract operation.Referring to the S140 of Fig. 5, first unit electric current can be measured by applying the first reading voltage to storage unit 30.
In addition, second unit electric current can be measured by applying the second reading voltage to storage unit 30 referring to the S150 of Fig. 5.The
One reading voltage and the second reading voltage can be voltage determining in step s 130.
In one embodiment, it can execute by applying the first reading voltage and the second reading voltage and measure as follows
Measure the process of first unit electric current and second unit electric current.Firstly, being increased in the voltage for being applied to storage unit 30 from 0V
After first reads voltage, electric current output of the measurement as first unit electric current at voltage can be read first.Then, it is applying
It adds to after the voltage of storage unit 30 is reduced to the second reading voltage from the first reading voltage, can be read at voltage second
Measurement is exported as the electric current of second unit electric current.
In one embodiment, by voltage from first reading voltage be reduced to the second reading voltage process may include
The voltage is continuously reduced when applying voltage to storage unit 30.
Fig. 9 is to schematically show in one embodiment of the disclosure to read voltage to the defeated of storage unit for applying
Enter the view of pulse.Referring to Fig. 9, applying the first reading voltage and the second reading voltage to the process of storage unit 30 may include
Apply single input pulse 3000.Input pulse 3000 can have continuously distributed multiple voltages within predetermined time width
Amplitude.Voltage on the current-voltage scanning curve for using Fig. 8 A and Fig. 8 B is described to the voltage magnitude of input pulse 3000.
Specifically, input pulse 3000 can have Ta0To Ta6Time width, and can be with during the time width
With the first crest voltage Vp1With the second crest voltage Vp2.First crest voltage Vp1The of variable resistor element 32 can be higher than
Two on state threshold voltage Vth2’And lower than setting voltage Vset’.In one embodiment, the second crest voltage Vp2Can be equal to or
Higher than the first shutdown threshold voltage Voff1’And voltage V is read lower than secondr2’.As long as however, the second crest voltage Vp2Size
Meet and the first crest voltage Vp1This condition of different sizes, then its is unrestricted.In some other example, the second peak value
Voltage Vp2It can be not present or not use.
Referring again to Fig. 9, from Ta0To Ta1Period during, the amplitude of input pulse 3000 can continuously increase from 0V
Greatly to the first crest voltage Vp1.Then, from Ta1To Ta6Period during, the amplitude of voltage can be from the first crest voltage
Vp1It is continuously reduced 0V, passes through the second crest voltage V therebetweenp2.First reads voltage Vr1’The second conduction threshold electricity can be higher than
Press Vth2’And it is lower than the first crest voltage Vp1.The first read access time T in the period that the amplitude of voltage reducesr1Place, first reads
Take voltage Vr1’Storage unit 30 can be applied to.Second reads voltage Vr2’The first shutdown threshold voltage V can be higher thanoff1’And
Lower than the first on state threshold voltage Vth1’.The second read access time T in the period that the amplitude of voltage reducesr2Place, second reads
Voltage Vr2’Storage unit 30 can be applied to.As shown, second voltage V is readr2’Voltage V can be read firstr1’
Storage unit 30 is applied to after being applied.Time T shown in Fig. 9a2、Ta3And Ta5It can correspond respectively to the second conducting
Threshold voltage Vth2’, the first on state threshold voltage Vth1’With the first shutdown threshold voltage Voff1’。
Figure 10 is to schematically show in another embodiment of the present disclosure to read voltage to storage unit for applying
The view of input pulse.Referring to Figure 10, apply first read voltage and second read voltage can be with to the process of storage unit 30
Including applying single input pulse 4000.Input pulse 4000 can have the continuously distributed voltage within predetermined time width
Amplitude.Voltage on the current-voltage scanning curve for using Fig. 8 A and Fig. 8 B is described to the voltage magnitude of input pulse 4000.
Specifically, input pulse 4000 can have from Tb0To Tb5Time width, and can during the time width
To have the first crest voltage and the second crest voltage.First crest voltage can correspond to the first reading voltage Vr1’, the second peak
Threshold voltage can correspond to the second reading voltage Vr2’。
First reads voltage Vr1’The second on state threshold voltage V of variable resistor element 32 can be higher thanth2’, and be lower than and set
Set voltage Vset’.Second reads voltage Vr2’The first shutdown threshold voltage V can be higher thanoff1’, and it is lower than the first on state threshold voltage
Vth1’。
Referring again to Figure 10, for from Tb0To Tb1Period, the amplitude of input pulse 4000 can continuously enlarge from 0V
To the first crest voltage, which, which has, reads voltage V with firstr1’Substantially the same size of size.It connects down
Come, from Tb1To Tb2Period during, the amplitude of input pulse 4000 can be kept constant.From Tb1To Tb2Period
Within predetermined first read access time Tr1Place, first reads voltage Vr1’Storage unit 30 can be applied to.From Tb2To Tb3
Period during, the amplitude of the voltage of application can be continuously reduced.Next, from Tb3To Tb4Period during, apply
The amplitude of voltage can keep constant.From Tb3To Tb4Period within predetermined second read access time Tr2Place, second reads
Take voltage Vr2’Storage unit 30 can be applied to.From Tb4To Tb5Period during, the amplitude of the voltage of application can be with
It is continuously reduced 0V.With the first shutdown threshold voltage Voff1’The corresponding time can be arranged in Tb4With Tb5Between.
Although the example of the input pulse for applying the first reading voltage and the second reading voltage is described above,
But the present disclosure is not limited thereto, and the input pulse of various other types may exist.However, in this case, input pulse
Voltage magnitude can also continuously change within predetermined time width.Then, with the difference electricity within single input pulse
First reading voltage of pressure amplitude value and the second reading voltage can be determined.Second, which reads voltage, can read for size less than first
Take the voltage of the size of voltage.Second reading voltage can then be applied after the first reading voltage is applied.
Determine the resistance states of storage in the memory unit
Figure 11 is to show cell current that the use in one embodiment of the disclosure is measured from storage unit to determine electricity
The view of the method for resistance state.
Referring to the S160 of Fig. 5, the resistance states being stored in storage unit 30 can be based on first unit electric current and second
Cell current determines.Specifically, as described in referring to Fig.1 1, the mistake for the resistance states being stored in storage unit 30 is determined
Journey may include: to read voltage V according to firstr1’Voltage V is read with secondr2’Between voltage difference calculate first unit electric current
With the difference of second unit electric current, slope with computing unit electric current relative to voltage difference, and by the slope of cell current and pre-
Surely it is compared with reference to slope.As a result, when the slope of cell current is greater than or equal to predetermined reference slope, it can be by resistance shape
State is determined as low resistance state, and when the slope of cell current is less than with reference to slope, resistance states can be determined as to high electricity
Resistance state.
According to one embodiment, it is single that the input pulse 4000 of voltage shown in Fig. 9 or Figure 10 can be applied to storage
Member 30.As a result, reading voltage V first respectivelyr1’Voltage V is read with secondr2’Place's measurement first unit electric current and second unit
Electric current.For the convenience of description, the measurement result of the second scanning figure 80b of Fig. 8 B can be used.
Firstly, can determine the first low resistance point M when variable resistor element 32 is in low resistance stateL1It is low with second
Point of resistance ML2, result as read operation.Meanwhile when variable resistor element 32 is in high resistance state, can be determined
One high resistance point MH1With the second high resistance point MH2, result as read operation.
Next, the first low resistance point M of connection can be obtainedL1With the second low resistance point ML2Oblique line 90a.Based on oblique line
90a can obtain the slope S L of cell current when variable resistor element 32 is in low resistance state.In the same way, may be used
The first high resistance point M is connected to obtainH1With the second high resistance point MH2Oblique line 90b.Based on oblique line 90b, can obtain can power transformation
The slope S H of cell current when resistance element 32 is in high resistance state.
Referring again to Fig. 8 B, when variable resistor element 32 is in low resistance state, applies second and read voltage Vr2’Electricity
Pressure may range from the voltage range that output electric current quickly reduces.In contrast, when variable resistor element 32 is in high resistance shape
When state, applies second and read voltage Vr2’Voltage range can be the voltage range that be gradually reduced of output electric current.Therefore, scheming
In 11, the first low resistance point M is connectedL1With the second low resistance point ML2The slope S L of cell current can be greater than connection first high
Point of resistance MH1With the second high resistance point MH2Cell current slope S H.Therefore, when variable resistor element 32 is in low resistance shape
State and be in high resistance state when, the slope of cell current can be efficiently identified.Therefore, if the slope of cell current is equal to
Or being greater than predetermined reference slope, then the resistance states of storage unit can be determined that low resistance state, and if cell current
Slope be less than predetermined reference slope, then the resistance states of storage unit can be determined that high resistance state.It can with reference to slope
To be calculated based on the database obtained and executing read operation to multiple storage units with known resistance state.
The method of the resistance states of above-mentioned determination storage unit can be by applying twi-read to same storage unit
Cell current executes twice for voltage and measurement.Therefore, the read error between storage unit can be reduced, and can be improved
The reliability of the read operation of storage unit.In other words, exist on the current-voltage characteristic curve between storage unit inclined
Difference, so that even if being also likely to be present different cell currents between storage unit at same reading voltage.According to the disclosure
Embodiment, the resistance states of storage unit can be by measure the slope of cell current twice for same storage unit
It determines, to prevent the mistake based on the deviation on current-voltage characteristic curve in read operation.
Disclose the embodiment of present inventive concept for purposes of illustration above.Those skilled in the art will recognize that
It arrives, in the case where not departing from the scope and spirit such as present inventive concept as disclosed in the accompanying claims, various modifications add
Adduction substitution is possible.
Claims (17)
1. a kind of method for reading resistive memory device, comprising:
Prepare the storage unit including selection element and variable resistor element, the selection element is for the storage unit
Rapid reversion is shown on current-voltage scanning curve is；
Determination will be applied to the storage unit within the voltage range that the selection element maintains on state first is read
Voltage and second is taken to read voltage, described second, which reads voltage, reads voltage lower than described first, and described second reads electricity
The selection element is pressed in show to select in the voltage range that the rapid reversion is；
Apply described first and reads voltage to the storage unit to measure first unit electric current；
Apply described second and reads voltage to the storage unit to measure second unit electric current；And
The resistance shape being stored in the storage unit is determined based on the first unit electric current and the second unit electric current
State.
2. the method as described in claim 1,
Wherein, the resistive memory device includes the first conducting wire extended in a first direction and extend in a second direction second
Conducting wire, and
Wherein, the storage unit is along third direction in region between first conducting wire and second conducting wire.
3. the method for claim 1, wherein the current-voltage scanning curve is by when scanning input current
Apply the curve that the input current is obtained to the storage unit and output voltage of the measurement from the storage unit.
4. the method for claim 1, wherein the current-voltage scanning curve is by when scanning input voltage
Apply the curve that the input voltage is obtained to the storage unit and output electric current of the measurement from the storage unit.
5. the method for claim 1, wherein the current-voltage scanning curve includes at the variable resistor element
Current-voltage measurement part and the variable resistor element when low resistance state are in electric current-electricity when high resistance state
Pressure measurement part.
6. the method as described in claim 1,
Wherein, the current-voltage scanning curve after applying input current to the storage unit in scanning by measuring
Output voltage from the storage unit obtains, and
Wherein, the rapid reversion is to include the electric current with application in the conduction threshold electric current for being equal to or more than the selection element
Current range in increase and output voltage reduce.
7. the method as described in claim 1,
Wherein it is determined that the first reading voltage includes:
While continuously enlarging the size of the electric current applied to the storage unit since 0A, measurement is single from the storage
The output voltage of member, to obtain the first scanning figure of the current-voltage scanning curve；And
The selection element in first scanning figure, when being higher than the variable resistor element and being in high resistance state
On state threshold voltage and lower than the variable resistor element setting voltage voltage range within select a voltage value.
8. the method for claim 7,
Wherein it is determined that the second reading voltage includes:
The output voltage is measured, while being continuously reduced the size of the electric current of the application from scheduled current to 0A to obtain
Obtain the second scanning figure of the current-voltage scanning curve；And
Be higher than the variable resistor element be in low resistance state when the selection element shutdown threshold voltage and be lower than
A voltage value is selected within the voltage range of the on state threshold voltage of the selection element in first scanning figure.
9. method according to claim 8, wherein the size and the first scanning figure of the shutdown threshold current of the selection element
On the conducting holding electric current that shows when the variable resistor element be in low resistance state after rapid reversion is it is substantially the same.
10. the method as described in claim 1,
Wherein it is determined that the first reading voltage includes:
Measurement comes from the storage while continuously enlarging the size for being directed to the voltage of the application of the storage unit from 0V
The output electric current of unit, to obtain the first scanning figure of the current-voltage scanning curve；And
Be higher than the variable resistor element be in high resistance state when the selection element on state threshold voltage and be lower than
A voltage value is selected within the voltage range of the setting voltage of the variable resistor element.
11. method as claimed in claim 10,
Wherein it is determined that the second reading voltage includes:
The output electric current is measured, while being continuously reduced the size of the voltage of the application from predetermined voltage to 0V to obtain
Obtain the second scanning figure of the current-voltage scanning curve；And
Be higher than the variable resistor element be in low resistance state when the selection element shutdown threshold voltage and be lower than
The conduction threshold electricity of the selection element when the variable resistor element is in low resistance state in first scanning figure
A voltage value is selected within the voltage range of pressure.
12. the method as described in claim 1,
Wherein, measuring the first unit electric current by applying the first reading voltage includes: that will be applied to the storage
The voltage of unit increases to the first reading voltage from 0V, then measures single from the storage at the first reading voltage
The output electric current of member, and
Wherein, measuring the second unit electric current by applying the second reading voltage includes: that will be applied to the storage
The voltage of unit is reduced to described second from the first reading voltage and reads voltage, then measures and reads voltage described second
The output electric current at place.
13. method as claimed in claim 12, wherein the voltage is reduced to described second from the first reading voltage
Reading voltage, which is included in, continuously reduces the voltage while applying the voltage to the storage unit.
14. the method for claim 1, wherein applying described first to read voltage to the storage unit and apply institute
It includes the single input pulse for applying the voltage magnitude with consecutive variations that the second reading voltage, which is stated, to the storage unit.
15. method as claimed in claim 14, wherein the voltage magnitude within the single input pulse connects at any time
Continuous distribution.
16. the method as described in claim 1,
Wherein, the electricity being stored in the storage unit is determined based on the first unit electric current and the second unit electric current
Resistance state includes:
The first unit electric current is calculated according to the voltage difference between the first reading voltage and the second reading voltage
Difference between the second unit electric current is to calculate slope of the cell current relative to the voltage difference；And
The slope of the cell current is compared with predetermined reference slope.
17. the method described in claim 16,
Wherein, when the slope of the cell current is equal to or more than the predetermined reference slope, the resistance states quilt
It is determined as low resistance state, and
Wherein, when the slope of the cell current is less than the predetermined reference slope, the resistance states are confirmed as
High resistance state.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180015857A KR102427895B1 (en) | 2018-02-08 | 2018-02-08 | method of reading resistive memory device |
| KR10-2018-0015857 | 2018-02-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110136763A true CN110136763A (en) | 2019-08-16 |
| CN110136763B CN110136763B (en) | 2022-12-06 |
Family
ID=67477027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811365709.6A Active CN110136763B (en) | 2018-02-08 | 2018-11-16 | Method of reading resistive memory device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10460799B2 (en) |
| KR (1) | KR102427895B1 (en) |
| CN (1) | CN110136763B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190062819A (en) * | 2017-11-29 | 2019-06-07 | 서울대학교산학협력단 | Resistive switching memory device and operation method thereof |
| US10916698B2 (en) * | 2019-01-29 | 2021-02-09 | Toshiba Memory Corporation | Semiconductor storage device including hexagonal insulating layer |
| KR20200104603A (en) * | 2019-02-27 | 2020-09-04 | 에스케이하이닉스 주식회사 | Nonvolatile memory apparatus effectively performing read operation and system using the same |
| US11527717B2 (en) * | 2019-08-30 | 2022-12-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistive memory cell having a low forming voltage |
| KR102203953B1 (en) * | 2019-12-20 | 2021-01-15 | 한경대학교 산학협력단 | Method and Circuit for Data read method of phase change memory with reduced variation |
| US11404638B2 (en) * | 2020-07-28 | 2022-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-doped data storage structure configured to improve resistive memory cell performance |
| US11380373B1 (en) * | 2021-05-12 | 2022-07-05 | Globalfoundries U.S. Inc. | Memory with read circuit for current-to-voltage slope characteristic-based sensing and method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004079952A (en) * | 2002-08-22 | 2004-03-11 | Fujitsu Ltd | Method for simulating electrostatic discharge protective circuit |
| JP2011018838A (en) * | 2009-07-10 | 2011-01-27 | Hitachi Ulsi Systems Co Ltd | Memory cell |
| US20140003127A1 (en) * | 2012-07-02 | 2014-01-02 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
| US20150270708A1 (en) * | 2014-03-24 | 2015-09-24 | Texas Instruments Incorporated | Esd protection circuit with plural avalanche diodes |
| CN107431070A (en) * | 2015-03-31 | 2017-12-01 | 索尼半导体解决方案公司 | Switching device and storage device |
| CN107545921A (en) * | 2016-06-27 | 2018-01-05 | 爱思开海力士有限公司 | Resistive memory and its method for sensing |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7307268B2 (en) * | 2005-01-19 | 2007-12-11 | Sandisk Corporation | Structure and method for biasing phase change memory array for reliable writing |
| US7453715B2 (en) * | 2005-03-30 | 2008-11-18 | Ovonyx, Inc. | Reading a phase change memory |
| US7280390B2 (en) * | 2005-04-14 | 2007-10-09 | Ovonyx, Inc. | Reading phase change memories without triggering reset cell threshold devices |
| US7990761B2 (en) * | 2008-03-31 | 2011-08-02 | Ovonyx, Inc. | Immunity of phase change material to disturb in the amorphous phase |
| GB2502553A (en) | 2012-05-30 | 2013-12-04 | Ibm | Read measurements of resistive memory cells |
| KR102187485B1 (en) | 2014-02-21 | 2020-12-08 | 삼성전자주식회사 | Nonvolatile memory device and sensing method thereof |
| US9275730B2 (en) * | 2014-04-11 | 2016-03-01 | Micron Technology, Inc. | Apparatuses and methods of reading memory cells based on response to a test pulse |
| US9142271B1 (en) * | 2014-06-24 | 2015-09-22 | Intel Corporation | Reference architecture in a cross-point memory |
| US9437293B1 (en) * | 2015-03-27 | 2016-09-06 | Intel Corporation | Integrated setback read with reduced snapback disturb |
| US10283197B1 (en) * | 2016-08-05 | 2019-05-07 | SK Hynix Inc. | Electronic device and method for reading data of memory cell |
| US10431267B2 (en) * | 2016-11-28 | 2019-10-01 | SK Hynix Inc. | Electronic device and method for driving the same |
| KR102300559B1 (en) * | 2017-11-27 | 2021-09-13 | 삼성전자주식회사 | Memory device and operating method thereof |
| KR102401183B1 (en) * | 2017-12-05 | 2022-05-24 | 삼성전자주식회사 | Memory device and operating method thereof |
-
2018
- 2018-02-08 KR KR1020180015857A patent/KR102427895B1/en active IP Right Grant
- 2018-10-22 US US16/167,051 patent/US10460799B2/en active Active
- 2018-11-16 CN CN201811365709.6A patent/CN110136763B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004079952A (en) * | 2002-08-22 | 2004-03-11 | Fujitsu Ltd | Method for simulating electrostatic discharge protective circuit |
| JP2011018838A (en) * | 2009-07-10 | 2011-01-27 | Hitachi Ulsi Systems Co Ltd | Memory cell |
| US20140003127A1 (en) * | 2012-07-02 | 2014-01-02 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
| US20150270708A1 (en) * | 2014-03-24 | 2015-09-24 | Texas Instruments Incorporated | Esd protection circuit with plural avalanche diodes |
| CN107431070A (en) * | 2015-03-31 | 2017-12-01 | 索尼半导体解决方案公司 | Switching device and storage device |
| CN107545921A (en) * | 2016-06-27 | 2018-01-05 | 爱思开海力士有限公司 | Resistive memory and its method for sensing |
Also Published As
| Publication number | Publication date |
|---|---|
| US20190244661A1 (en) | 2019-08-08 |
| KR20190096205A (en) | 2019-08-19 |
| CN110136763B (en) | 2022-12-06 |
| US10460799B2 (en) | 2019-10-29 |
| KR102427895B1 (en) | 2022-08-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110136763A (en) | The method for reading resistive memory device | |
| US8525142B2 (en) | Non-volatile variable resistance memory device and method of fabricating the same | |
| CN107545921B (en) | Resistive memory device and sensing method thereof | |
| KR101275800B1 (en) | Non-volatile memory device comprising variable resistance material | |
| US7602042B2 (en) | Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same | |
| Akinaga et al. | Resistive random access memory (ReRAM) based on metal oxides | |
| US7525832B2 (en) | Memory device and semiconductor integrated circuit | |
| CN101958147B (en) | Phase change memory device and method | |
| US9275727B2 (en) | Multi-level memory array having resistive elements for multi-bit data storage | |
| CN101097988B (en) | Variable resistance random access memory device containing n+ interface layer | |
| KR101176542B1 (en) | Nonvolatile memory device and memory array | |
| CN102623045B (en) | Resistive random access memory unit and memory | |
| US7871866B2 (en) | Method of manufacturing semiconductor device having transition metal oxide layer and related device | |
| US8586978B2 (en) | Non-volatile memory device including diode-storage node and cross-point memory array including the non-volatile memory device | |
| JP4774109B2 (en) | Control circuit for forming process of nonvolatile variable resistance element and control method for forming process | |
| US20080062740A1 (en) | Methods of programming a resistive memory device | |
| CN109768158A (en) | Memory device with cross-point memory array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |