CN110128736A - A kind of high-tension cable semiconductive shieldin material and its preparation method and application - Google Patents
A kind of high-tension cable semiconductive shieldin material and its preparation method and application Download PDFInfo
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- CN110128736A CN110128736A CN201910277812.3A CN201910277812A CN110128736A CN 110128736 A CN110128736 A CN 110128736A CN 201910277812 A CN201910277812 A CN 201910277812A CN 110128736 A CN110128736 A CN 110128736A
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- C—CHEMISTRY; METALLURGY
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
- C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L23/04—Homopolymers or copolymers of ethene
- C08L23/08—Copolymers of ethene
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K2201/001—Conductive additives
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Abstract
The invention discloses a kind of ac cable semiconductive shieldin materials and its preparation method and application, its raw material includes resin matrix, the modified graphene of specific structure, conductive black, antioxidant and crosslinking agent, it also selectively include dispersing agent, the inventory of modified graphene accounts for the 0.1-10% of raw material；Preparation: the modified graphene of above-mentioned specific structure is first prepared, is then mixed with above-mentioned ac cable semiconductive shieldin material with remaining raw material again；And application of the above-mentioned ac cable semiconductive shieldin material in 220kV high-tension cable；The present invention improves the electric conductivity and its surface smooth property of shielding material, and homogenizing insulation electric field is improved transmission of electricity safety, and then can be realized the highly conductive characteristic of shielding material with lower graphene additive amount.
Description
Technical field
The invention belongs to power cable semiconductive shieldin material field more particularly to high pressure such as 220kV ac cables to use
A kind of semiconductive shieldin material, and in particular to ac cable semiconductive shieldin material and its preparation method and application.
Background technique
All the time, the key problem for restricting high-tension cable transmission of electricity is the defect of cable insulation and the boundary of insulation screen
The electric conductivity of face characteristic and shielding material, wherein the surface smooth property of shielding material and its conductive characteristic are to cause cable local
The key performance of insulation breakdown is concentrated and caused to electric field stress, currently in order to improving the electric conductivity of shielding material, generally all joined
Graphene, although however graphene be added thereto and can be improved electric conductivity, be very easy to reunite, melting extrusion mixing side
Method is difficult to be evenly dispersed in resin matrix, and the graphene reunited in resin matrix is not only easy under high voltage electric field
Point discharge is formed, and this non-uniform dispersion is also difficult to play the highly conductive ability under its low loading.
Have in currently available technology and be correspondingly improved regarding to the issue above, such as Chinese invention patent
CN104356487B, a kind of preparation method of cable graphene semiconductive shieldin material, comprising the following steps: (1) by graphene
Mixed with organic solvent, ultrasonic disperse for a period of time after, be placed in high speed dispersion agent machine and be stirred, form the mixing of graphene
Solution；(2) resin is mixed with organic solvent, heating stirring is cooled to room temperature after evenly mixing, obtains the mixed solution of resin；
(3) mixed solution of the graphene of step (1) is mixed with the mixed resin solution of step (2), stirs evenly, obtains stone
The mixed solution of black alkene and resin；(4) under inert gas protection, by the mixed solution of the graphene and resin through spraying dry
Dry pelletizer drying-granulating obtains the cable graphene semiconductive shieldin material；The exhaust gas of the spray drying granulation machine is logical
Cross condensing unit recycling organic solvent.Although this patent improves graphene to a certain extent, the dispersion in shielding material material is equal
Even property, but organic solvent on the one hand has been used, it is unfavorable for environmental protection, on the other hand, it is also necessary to be additionally provided with solvent recycling
Device increases cost, and when that cannot recycle completely, can all cause expensive damage for water body and surrounding enviroment, together
When this patent in semiconductive shieldin material over time, the graphene of nanometer particle size still has reunites again
Hidden danger.
Therefore, those skilled in the art urgently seeks a kind of methods to solve the above problems.
Summary of the invention
The technical problem to be solved by the present invention is to overcome deficiency in the prior art, a kind of improved ac cable is provided
It with semiconductive shieldin material, is modified by the graphene to specific structure, and then can be with lower graphene additive amount
It realizes that highly conductive characteristic is expected in shielding, avoids the occurrence of the harm of point discharge in the prior art, and reunite again there is no graphene
The phenomenon that.
The present invention additionally provides the preparation method of ac cable semiconductive shieldin material simultaneously.
The present invention additionally provides ac cable with semiconductive shieldin material in 220kV ac cable semiconductive shieldin material simultaneously
In application.
In order to solve the above technical problems, a kind of technical solution that the present invention takes is as follows:
A kind of ac cable semiconductive shieldin material, the raw material of the semiconductive shieldin material include resin matrix, conductive charcoal
Black, antioxidant and crosslinking agent, the raw material further include modified graphene, and the modified graphene is selected from chemical combination shown in formula (I)
One of object or a variety of combinations, in terms of mass percentage, the inventory of the modified graphene accounts for the raw material
0.1-10%；
Wherein, R is
Some preferred aspects according to the present invention, in terms of mass percentage, the inventory of the modified graphene accounts for institute
State the 1-8% of raw material.
Some preferred aspects according to the present invention, the modified graphene are prepared via a method which and obtain:
(1) single-walled carbon nanotube is used into plasma etch processes, the graphene of lamella is made；
(2) graphene of the lamella made from step (1) is added in the aqueous solution of mixed acid and is placed on ice bath
Pretreating graphite alkene is made in lower stirring；
(3) the pretreating graphite alkene made from step (2) is added into the solution of the compound containing R group, instead
It answers, the modified graphene is made；Wherein the compound containing R group is selected from N- vinylpyrrolidone and quaternized second
The copolymer of alkene imidazoles, 1,1,1- trifluoroacetone, in 9- ethyl -9- borabi cyclo [3,3,1] nonane and 4-methyl-2 pentanone
One or more combinations.
Some preferred aspects according to the present invention, in step (2), the mixed acid is made of the concentrated sulfuric acid and concentrated nitric acid, institute
The mass ratio that feeds intake for stating the concentrated sulfuric acid and the concentrated nitric acid is 1: 2.5-3.5.
The copolymer of a specific aspect according to the present invention, the N- vinylpyrrolidone and quartenized vinyl imidazoles is
The polyquaternium -44 of the auspicious prosperous chemical industry in Guangzhou.
Some preferred aspects according to the present invention, the resin matrix are ethylene butyl acrylate resin, the ethylene propylene
The butyl acrylate content of olefin(e) acid butyl ester resin is 20%-28%, melt index 20-30g/10min.
The oil factor of some preferred aspects according to the present invention, the conductive black is greater than 150cc/100g, 325 mesh screen residues
Object is less than 1ppm, and 500 screen residues are less than 5ppm, and moisture content is less than 0.1%, and content of ashes is less than 0.01%.
Some preferred aspects according to the present invention, the antioxidant are 4,4'- thiobis (6- tert-butyl -3- methylphenol)
With the mixture of four [β-(3,5- di-tert-butyl-hydroxy phenyl) propionic acid] pentaerythritol esters.
Some preferred aspects according to the present invention, the raw material further include dispersing agent, and the dispersing agent is EVA wax.
More according to the present invention specific and preferred aspect, the crosslinking agent are bis- (1- methyl-1-phenylethyl) mistakes
Oxide.
More according to the present invention specific and preferred aspect, based on parts by weight, the raw material of the semiconductive shieldin material
Including 80-100 parts of resin matrix, 1-10 parts of modified graphene, 20-70 parts of conductive black, 0.2-1 parts of antioxidant and crosslinking agent 1-
3 parts, also selectively include dispersing agent 1-10 parts.
Some preferred aspects according to the present invention, based on parts by weight, the raw material of the semiconductive shieldin material includes resin
80-95 parts of matrix, 1-6 parts of modified graphene, 20-50 parts of conductive black, 0.2-1 parts of antioxidant and 1-3 parts of crosslinking agent, also select
Property include dispersing agent 1-6 parts.
A specific aspect according to the present invention, based on parts by weight, the raw material of the semiconductive shieldin material includes resin
90 parts of matrix, 3 parts of modified graphene, 25 parts of conductive black, 0.5 part of antioxidant and 1.5 parts of crosslinking agent also selectively include point
2 parts of powder.
A kind of another technical solution provided by the invention: preparation side of ac cable semiconductive shieldin material described above
Method, the preparation method include the following steps:
(i) modified graphene oxide is prepared:
(1) single-walled carbon nanotube is used into plasma etch processes, the graphene of lamella is made；
(2) graphene of the lamella made from step (1) is added in the aqueous solution of mixed acid and is placed on ice bath
Pretreating graphite alkene is made in lower stirring；
(3) the pretreating graphite alkene made from step (2) is added into the solution of the compound containing R group, instead
It answers, the modified graphene is made；Wherein the compound containing R group is selected from N- vinylpyrrolidone and quaternized second
The copolymer of alkene imidazoles, 1,1,1- trifluoroacetone, in 9- ethyl -9- borabi cyclo [3,3,1] nonane and 4-methyl-2 pentanone
One or more combinations；
(II) prepares ac cable semiconductive shieldin material:
(a) each raw material is weighed by formula, each raw material in addition to crosslinking agent is added in mixer mixing 10-60 minutes,
Extruding pelletization obtains semi-finished product；
(b) crosslinking agent is weighed according to formula, be added in the semi-finished product of step (a) preparation, the friendship is made in stirring
Galvanic electricity cable semiconductive shieldin material.
Some preferred aspects according to the present invention, in step (2), the mixed acid is made of the concentrated sulfuric acid and concentrated nitric acid, institute
The mass ratio for stating the concentrated sulfuric acid and the concentrated nitric acid is 1: 2.5-3.5.
Another technical solution provided by the invention: one kind ac cable semiconductive shieldin material described above is in 220kV
Application in ac cable semiconductive shieldin material.
According to the present invention, in the present invention melt index that refers to be with ASTM D1238 standard under the conditions of 190 DEG C by
It is measured according to testing when load is 2.16Kg.
According to the present invention, the concentrated sulfuric acid referred in the present invention refers to that mass fraction is the aqueous sulfuric acid of 75-99%,
The concentrated nitric acid refers to that mass fraction is the aqueous solution of nitric acid of 65-99%.
Due to the use of above technical scheme, the invention has the following advantages over the prior art:
The modified graphene of specific structure is added in the present invention in semi-conductive shielding material, improves the electric conductivity of shielding material
And its surface smooth property, homogenizing insulation electric field improve transmission of electricity safety, and then can be real with lower graphene additive amount
Now highly conductive characteristic is expected in shielding, while avoiding the occurrence of the harm of point discharge in the prior art, and is rolled into a ball again there is no graphene
Poly- phenomenon.
Specific embodiment
Above scheme is described further below in conjunction with specific embodiment；It should be understood that these embodiments are for illustrating
The basic principles, principal features and advantages of the present invention, and the present invention is not by the scope limitation of following embodiment；It is used in embodiment
Implementation condition further adjustment can be done according to specific requirement, the implementation condition being not specified is usually the item in routine experiment
Part.
Without specific instruction in following embodiments, all raw materials are substantially from conventional method that is commercially available or passing through this field
It is prepared.Following melt index referred to are to be according to test load under the conditions of 190 DEG C with ASTM D1238 standard
2.16Kg when measure.In following, the butyl acrylate content of ethylene butyl acrylate resin is 26%, melt index 23g/
10min, conductive black are U.S.'s Cabot carbon black VULCANXC72, and the concentrated sulfuric acid is the aqueous sulfuric acid of mass fraction 98%, dense
Nitric acid refer to mass fraction be 68% aqueous solution of nitric acid, antioxidant 4,4'- thiobis (6- tert-butyl -3- methylphenol) and
The mixture of four [β-(3,5- di-tert-butyl-hydroxy phenyl) propionic acid] pentaerythritol esters in mass ratio 1: 1, dispersing agent EVA
Wax, crosslinking agent are bis- (1- methyl-1-phenylethyl) peroxide.
Embodiment 1
This example provides a kind of 220kV ac cable semiconductive shieldin material, and in parts by weight, the raw material of the CABLE MATERIALS is matched
Side is as follows: 90 parts of ethylene butyl acrylate resin, 3 parts of modified graphene, 25 parts of conductive black, 0.5 part of antioxidant, dispersing agent 2
Part, 1.5 parts of crosslinking agent；Wherein, the structural formula of modified graphene isWherein R is
Preparation method includes the following steps:
(i) modified graphene oxide is prepared:
(1) single-walled carbon nanotube is used into plasma etch processes, the graphene of stable lamella is made after the bonding of surface；
(2) graphene of the lamella made from step (1) is added in the aqueous solution of mixed acid and is placed on ice bath
Lower stirring 30min, mixing speed are 1000 turns/min, and pretreating graphite alkene is made；The mixed acid by mass ratio be 1: 3 it is dense
Sulfuric acid and concentrated nitric acid are constituted；
(3) the pretreating graphite alkene made from step (2) is added into the solution of the compound containing R group, it is low
Speed stirring 30min, reaction are made the modified graphene, filtering to get；Wherein the compound containing R group is Guangzhou
The polyquaternium -44 of auspicious prosperous chemical industry；
(II) prepares ac cable semiconductive shieldin material:
(a) each raw material is weighed by formula, each raw material in addition to crosslinking agent is added to mixing 30 minutes, mixing in mixer
Temperature is 160 DEG C or so, and extruding pelletization obtains semi-finished product；
(b) crosslinking agent is weighed according to formula, be added in the semi-finished product of step (a) preparation, the friendship is made in stirring
Galvanic electricity cable semiconductive shieldin material.
Embodiment 2
This example provides a kind of 220kV ac cable semiconductive shieldin material, and in parts by weight, the raw material of the CABLE MATERIALS is matched
Side is as follows: 90 parts of ethylene butyl acrylate resin, 3 parts of modified graphene, 25 parts of conductive black, 0.5 part of antioxidant, dispersing agent 2
Part, 1.5 parts of crosslinking agent.Wherein, the structural formula of modified graphene isWherein R is
Preparation method includes the following steps:
(i) modified graphene oxide is prepared:
(1) single-walled carbon nanotube is used into plasma etch processes, the graphene of stable lamella is made after the bonding of surface；
(2) graphene of the lamella made from step (1) is added in the aqueous solution of mixed acid and is placed on ice bath
Lower stirring 30min, mixing speed are 1000 turns/min, and pretreating graphite alkene is made；The mixed acid by mass ratio be 1: 3 it is dense
Sulfuric acid and concentrated nitric acid are constituted；
(3) the pretreating graphite alkene made from step (2) is added into the solution of the compound containing R group, it is low
Speed stirring 30min, reaction are made the modified graphene, filtering to get；Wherein the compound containing R group is 1,1,
1- trifluoroacetone；
(II) prepares ac cable semiconductive shieldin material:
(a) each raw material is weighed by formula, each raw material in addition to crosslinking agent is added to mixing 30 minutes, mixing in mixer
Temperature is 160 DEG C or so, and extruding pelletization obtains semi-finished product；
(b) crosslinking agent is weighed according to formula, be added in the semi-finished product of step (a) preparation, the friendship is made in stirring
Galvanic electricity cable semiconductive shieldin material.
Embodiment 3
This example provides a kind of 220kV ac cable semiconductive shieldin material, and in parts by weight, the raw material of the CABLE MATERIALS is matched
Side is as follows: 90 parts of ethylene butyl acrylate resin, 3 parts of modified graphene, 25 parts of conductive black, 0.5 part of antioxidant, dispersing agent 2
Part, 1.5 parts of crosslinking agent.Wherein, the structural formula of modified graphene isWherein R is
Preparation method includes the following steps:
(i) modified graphene oxide is prepared:
(1) single-walled carbon nanotube is used into plasma etch processes, the graphene of stable lamella is made after the bonding of surface；
(2) graphene of the lamella made from step (1) is added in the aqueous solution of mixed acid and is placed on ice bath
Lower stirring 30min, mixing speed are 1000 turns/min, and pretreating graphite alkene is made；The mixed acid by mass ratio be 1: 3 it is dense
Sulfuric acid and concentrated nitric acid are constituted；
(3) the pretreating graphite alkene made from step (2) is added into the solution of the compound containing R group, it is low
Speed stirring 30min, reaction are made the modified graphene, filtering to get；Wherein the compound containing R group is 9- second
Base -9- borabi cyclo [3,3,1] nonane；
(II) prepares ac cable semiconductive shieldin material:
(a) each raw material is weighed by formula, each raw material in addition to crosslinking agent is added to mixing 30 minutes, mixing in mixer
Temperature is 160 DEG C or so, and extruding pelletization obtains semi-finished product；
(b) crosslinking agent is weighed according to formula, be added in the semi-finished product of step (a) preparation, the friendship is made in stirring
Galvanic electricity cable semiconductive shieldin material.
Embodiment 4
This example provides a kind of 220kV ac cable semiconductive shieldin material, and in parts by weight, the raw material of the CABLE MATERIALS is matched
Side is as follows: 90 parts of ethylene butyl acrylate resin, 3 parts of modified graphene, 25 parts of conductive black, 0.5 part of antioxidant, dispersing agent 2
Part, 1.5 parts of crosslinking agent.Wherein, the structural formula of modified graphene isWherein R is
Preparation method includes the following steps:
(i) modified graphene oxide is prepared:
(1) single-walled carbon nanotube is used into plasma etch processes, the graphene of stable lamella is made after the bonding of surface；
(2) graphene of the lamella made from step (1) is added in the aqueous solution of mixed acid and is placed on ice bath
Lower stirring 30min, mixing speed are 1000 turns/min, and pretreating graphite alkene is made；The mixed acid by mass ratio be 1: 3 it is dense
Sulfuric acid and concentrated nitric acid are constituted；
(3) the pretreating graphite alkene made from step (2) is added into the solution of the compound containing R group, it is low
Speed stirring 30min, reaction are made the modified graphene, filtering to get；Wherein the compound containing R group is 4- first
Base -2 pentanone；
(II) prepares ac cable semiconductive shieldin material:
(a) each raw material is weighed by formula, each raw material in addition to crosslinking agent is added to mixing 30 minutes, mixing in mixer
Temperature is 160 DEG C or so, and extruding pelletization obtains semi-finished product；
(b) crosslinking agent is weighed according to formula, be added in the semi-finished product of step (a) preparation, the friendship is made in stirring
Galvanic electricity cable semiconductive shieldin material.
Comparative example 1
Substantially with embodiment 1, difference, which is only that, is not added modified graphene, and the additive amount for correspondingly adjusting conductive black is 28
Part.
Comparative example 2
Substantially with embodiment 1, difference, which is only that, replaces with modified graphene conventional nanometer particle size graphene.
Performance test
Semiconductive shieldin material obtained by above-described embodiment 1-4 and comparative example 1-2 is carried out such as after placing one month
Lower performance test, concrete outcome is referring to table 1.
Tensile strength: GB/T1040.3-2006；Elongation at break: GB/T1040.3-2006；Volume resistivity at 20 DEG C:
GB/T3048.3-2007；Volume resistivity at 90 DEG C: GB/T3048.3-2007；Heat extends: GB/T2951.21-2008；Impact
Brittle temperature: GB/T5470-2008；Thermal aging test: GB/T2951.12-2008.
Table 1
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention, it is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of ac cable semiconductive shieldin material, the raw material of the semiconductive shieldin material include resin matrix, conductive black,
Antioxidant and crosslinking agent, which is characterized in that the raw material further includes modified graphene, and the modified graphene is selected from formula (I)
One of shown compound or a variety of combinations, in terms of mass percentage, the inventory of the modified graphene accounts for described
The 0.1-10% of raw material；
Wherein, R is
2. ac cable semiconductive shieldin material according to claim 1, which is characterized in that in terms of mass percentage,
The inventory of the modified graphene accounts for the 1-8% of the raw material.
3. ac cable semiconductive shieldin material according to claim 1, which is characterized in that the modified graphene passes through
Following method is prepared:
(1) single-walled carbon nanotube is used into plasma etch processes, the graphene of lamella is made；
(2) graphene of the lamella made from step (1) is added in the aqueous solution of mixed acid and is placed under ice bath and stirred
It mixes, pretreating graphite alkene is made；
(3) the pretreating graphite alkene made from step (2) is added into the solution of the compound containing R group, is reacted, system
At the modified graphene；Wherein the compound containing R group is selected from N- vinylpyrrolidone and quartenized vinyl miaow
Copolymer, 1,1,1- trifluoroacetone, 9- ethyl -9- borabi cyclo [3,3,1] one of nonane and 4-methyl-2 pentanone of azoles
Or a variety of combination.
4. ac cable semiconductive shieldin material according to claim 3, which is characterized in that in step (2), the mixing
Acid is made of the concentrated sulfuric acid and concentrated nitric acid, and the mass ratio that feeds intake of the concentrated sulfuric acid and the concentrated nitric acid is 1: 2.5-3.5.
5. ac cable semiconductive shieldin material according to claim 1, which is characterized in that the resin matrix is ethylene
The butyl acrylate content of butyl acrylate resin, the ethylene butyl acrylate resin is 20%-28%, and melt index is
20-30g/10min。
6. ac cable semiconductive shieldin material according to claim 1, which is characterized in that the oil suction of the conductive black
Value is greater than 150cc/100g, and 325 screen residues are less than 1ppm, and 500 screen residues are less than 5ppm, and moisture content is less than 0.1%, ash
Divide content less than 0.01%.
7. ac cable semiconductive shieldin material according to claim 1, which is characterized in that the antioxidant is 4,4'-
Thiobis (6- tert-butyl -3- methylphenol) and four [β-(3,5- di-tert-butyl-hydroxy phenyl) propionic acid] pentaerythritol esters
Mixture；And/or the raw material further includes dispersing agent, the dispersing agent is EVA wax；And/or the crosslinking agent is bis- (1- first
Base -1- phenylethyl) peroxide.
8. ac cable semiconductive shieldin material according to claim 1, which is characterized in that based on parts by weight, described
The raw material of semiconductive shieldin material includes 80-100 parts of resin matrix, 1-10 parts of modified graphene, 20-70 parts of conductive black, antioxygen
0.2-1 parts and crosslinking agent 1-3 parts of agent, also selectively include dispersing agent 1-10 parts.
9. the preparation method of ac cable semiconductive shieldin material described in a kind of any one of claim 1-8 claim,
It is characterized in that, the preparation method includes the following steps:
(i) modified graphene oxide is prepared:
(1) single-walled carbon nanotube is used into plasma etch processes, the graphene of lamella is made；
(2) graphene of the lamella made from step (1) is added in the aqueous solution of mixed acid and is placed under ice bath and stirred
It mixes, pretreating graphite alkene is made；
(3) the pretreating graphite alkene made from step (2) is added into the solution of the compound containing R group, is reacted, system
At the modified graphene；Wherein the compound containing R group is selected from N- vinylpyrrolidone and quartenized vinyl miaow
Copolymer, 1,1,1- trifluoroacetone, 9- ethyl -9- borabi cyclo [3,3,1] one of nonane and 4-methyl-2 pentanone of azoles
Or a variety of combination；
(II) prepares ac cable semiconductive shieldin material:
(a) each raw material is weighed by formula, each raw material in addition to crosslinking agent is added in mixer mixing 10-60 minutes, squeezed out
It is granulated, obtains semi-finished product；
(b) crosslinking agent is weighed according to formula, be added in the semi-finished product of step (a) preparation, the alternating current is made in stirring
Cable semiconductive shieldin material.
10. ac cable semiconductive shieldin material described in a kind of any one of claim 1-8 claim is exchanged in 220kV
Application in cable semiconductive shieldin material.
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| CN201910277812.3A CN110128736A (en) | 2019-04-08 | 2019-04-08 | A kind of high-tension cable semiconductive shieldin material and its preparation method and application |
| PCT/CN2019/112911 WO2020206979A1 (en) | 2019-04-08 | 2019-10-24 | Semi-conductive shielding material for high voltage cable, and preparation method and use thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2020206979A1 (en) * | 2019-04-08 | 2020-10-15 | 江苏德威新材料股份有限公司 | Semi-conductive shielding material for high voltage cable, and preparation method and use thereof |
| WO2023035369A1 (en) * | 2021-09-13 | 2023-03-16 | 南方电网科学研究院有限责任公司 | Method for preparing semi-conductive shielding material of high-voltage cable on basis of conductive carbon black having high graphitization degree |
| CN116082741A (en) * | 2022-11-07 | 2023-05-09 | 万华化学（宁波）有限公司 | Cable shielding material and preparation method and application thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112457567B (en) * | 2020-11-27 | 2022-12-06 | 南方电网科学研究院有限责任公司 | High-voltage cable semi-conductive shielding material and preparation method thereof |
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| CN107474376A (en) * | 2017-09-12 | 2017-12-15 | 哈尔滨理工大学 | A kind of cable semi-conductive shielding material and preparation method thereof |
| CN109206731A (en) * | 2018-08-27 | 2019-01-15 | 芜湖市元奎新材料科技有限公司 | A kind of power cable shielding material of containing graphene and preparation method thereof |
| CN110128736A (en) * | 2019-04-08 | 2019-08-16 | 江苏德威新材料股份有限公司 | A kind of high-tension cable semiconductive shieldin material and its preparation method and application |
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| CN102352038A (en) * | 2011-07-21 | 2012-02-15 | 同济大学 | Preparation method for grapheme modified bismaleimide resin nanometer composite materials |
| CN108164804A (en) * | 2017-12-22 | 2018-06-15 | 上海至正道化高分子材料股份有限公司 | Compound semiconductive shieldin material of middle-high voltage power cable graphene and preparation method thereof |
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| WO2020206979A1 (en) * | 2019-04-08 | 2020-10-15 | 江苏德威新材料股份有限公司 | Semi-conductive shielding material for high voltage cable, and preparation method and use thereof |
| WO2023035369A1 (en) * | 2021-09-13 | 2023-03-16 | 南方电网科学研究院有限责任公司 | Method for preparing semi-conductive shielding material of high-voltage cable on basis of conductive carbon black having high graphitization degree |
| CN116082741A (en) * | 2022-11-07 | 2023-05-09 | 万华化学（宁波）有限公司 | Cable shielding material and preparation method and application thereof |
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