CN110127595A - The manufacturing method of MEMS bridge structure - Google Patents
The manufacturing method of MEMS bridge structure Download PDFInfo
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- CN110127595A CN110127595A CN201910297049.0A CN201910297049A CN110127595A CN 110127595 A CN110127595 A CN 110127595A CN 201910297049 A CN201910297049 A CN 201910297049A CN 110127595 A CN110127595 A CN 110127595A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/00373—Selective deposition, e.g. printing or microcontact printing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00404—Mask characterised by its size, orientation or shape
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Abstract
The invention discloses a kind of manufacturing methods of MEMS bridge structure, comprising: Step 1: forming the first amorphous silicon layer in substrate surface；Step 2: forming the first silicon dioxide layer；Step 3: forming bridge post holes；Step 4: forming the second silicon dioxide layer, the first and second silicon dioxide layers all cover on the surface of the first amorphous silicon layer；Step 5: forming the second amorphous silicon layer as sensor film and being patterned；The substrate surface of bridge post holes bottom is exposed Step 6: performing etching；Electrode material layer and be patterned Step 7: being formed, it is graphical after electrode material layer and the second amorphous silicon layer and substrate surface contact；ONO layer and be patterned Step 8: being formed, it is graphical after ONO layer be covered on the top of electrode material layer to eliminate stress；Step 9: the etching for carrying out first amorphous silicon layer forms hanging bridge structure.The present invention can prevent from rolling up in bridge structure generation, so as to prevent bridge structure from collapsing.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit, more particularly to a kind of manufacturing method of MEMS bridge structure.
Background technique
MEMS device, by extensive concern, is especially widely used in terms of sensor in semicon industry.MEMS device
In electrode formation process when existing MEMS device in important process step, MEMS electrode has extremely important effect.
In prior art, using amorphous silicon as the main supporting body in the electrode of MEMS device, and electrode material generallys use TiN
Film, i.e., using TiAlN thin film as connecting wire.But it is easy to when the metal of electrode material and amorphous silicon directly contact
It reacts between metal and amorphous silicon；And in MEMS bridge structure, need to remove the amorphous silicon as bearing bed, so that
Electrode is in hanging bridge structure, and since amorphous silicon and metal electrode are easy to happen reaction, so that the meeting when removing amorphous silicon
Have an adverse effect, metal electrode can such as generated and rolls up.
In addition, metal electrode such as TiAlN thin film, itself has biggish stress, the effect of stress is also easy so that last shape
At bridge structure generate on roll up and thereby cause collapse.
If Figure 1A to Fig. 1 D is the device architecture schematic diagram in each step of manufacturing method of existing MEMS bridge structure；Including
Following steps:
First, the amorphous silicon layer 102 as bearing bed as shown in Figure 1A, is formed on substrate such as silicon substrate 101.
Later, as shown in Figure 1B, the amorphous silicon layer 102 is patterned using lithographic definition plus etching technics.
Later, electrode material layer 103 as shown in Figure 1 C, is formed, electrode material layer 103 generallys use TiAlN thin film.
Later, as shown in figure iD, the electrode material layer 103 is patterned using lithographic definition plus etching technics.
When forming the bridge structure of electrode, it is also necessary to remove amorphous silicon layer 102 using etching technics.And due to amorphous silicon layer
102 and electrode material layer 103 be easy to happen reaction so that going such as make unless when amorphous silicon layer 102 can have an adverse effect
Electrode material layer 103 is rolled up on generating；In addition, 103 inside of electrode material layer can also have stress problem and can make bridge knot itself
Structure is rolled up on generating.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of manufacturing methods of MEMS bridge structure, can prevent bridge knot
Structure is rolled up on generating, so as to prevent bridge structure from collapsing.
In order to solve the above technical problems, the manufacturing method of MEMS bridge structure provided by the invention includes the following steps:
Step 1: forming the first amorphous silicon layer as supporting body in substrate surface.
Step 2: forming the first silicon dioxide layer on first amorphous silicon layer surface.
Step 3: adding etching technics to form bridge post holes using lithographic definition, the bridge post holes passes through first titanium dioxide
Silicon layer and first amorphous silicon layer.
Step 4: forming the second silicon dioxide layer, second silicon dioxide layer is covered on the bottom table of the bridge post holes
Face and side and the surface for extending to first silicon dioxide layer outside the bridge post holes, first silicon dioxide layer and institute
It states the second silicon dioxide layer and is superimposed the protective layer to be formed and all cover on the surface of first amorphous silicon layer.
Step 5: the second amorphous silicon layer as sensor film is formed on the surface of the protective layer, using lithographic definition
Etching technics is added to be patterned second amorphous silicon layer.
The second silicon dioxide layer described in the bottom of the bridge post holes is removed and Step 6: performing etching by the substrate table
It shows out.
Step 7: forming electrode material layer, figure is carried out to the electrode material layer using lithographic definition plus etching technics
Change, it is graphical after the electrode material layer and second amorphous silicon layer contact and in the bottom of the bridge post holes and described
Substrate surface contact.
Step 8: forming ONO layer, the ONO layer is by third silicon dioxide layer, the 4th silicon nitride layer and the 5th silica
Layer is formed by stacking；The ONO layer is patterned using lithographic definition plus etching technics, it is graphical after the ONO layer cover
Cover the top in the electrode material layer and the stress for eliminating the electrode material layer.
Step 9: carrying out the etching of first amorphous silicon layer, is formed and engraved in the region of first amorphous silicon layer removal
Empty region simultaneously forms hanging bridge structure.
A further improvement is that the electrode material layer is using TiN layer or using Ti layers and the superimposed layer of TiN layer.
A further improvement is that the electrode material layer with a thickness of
A further improvement is that the electrode material layer is formed using PVD process.
A further improvement is that the substrate is silicon substrate.
A further improvement is that being formed with device architecture over the substrate.
A further improvement is that including over the substrate induction zone, sensing device, institute are formed in the induction zone
Bridge structure is stated to connect with the sensing device.
A further improvement is that first amorphous silicon layer is formed using CVD technique.
A further improvement is that first silicon dioxide layer is formed using CVD technique, second silicon dioxide layer is adopted
It is formed with CVD technique.
A further improvement is that the third silicon dioxide layer of the ONO layer, the 4th silicon nitride layer and described
Five silicon dioxide layers are all respectively adopted corresponding CVD technique and sequentially form.
A further improvement is that the third silicon dioxide layer with a thickness of4th silicon nitride layer
With a thickness of5th silicon dioxide layer with a thickness of
A further improvement is that the overlay area of second amorphous silicon layer includes the bridge column after graphical in step 5
The side in hole.
A further improvement is that the region area that the substrate surface exposes after etching technics in step 6 be less than it is described
The area of bridge post holes.
A further improvement is that including two bridge post holes in the side of each induction zone in step 3.
A further improvement is that in step 9, by the protective layer, second amorphous being formed in the bridge post holes
Silicon layer, the electrode material layer and the ONO layer are superimposed to form bridge column.
The one or two as protective layer is also formed in the present invention after being formed as the first amorphous silicon layer of supporting body
Silicon oxide layer is further added by the second silicon dioxide layer as protective layer, the first and second titanium dioxides after etching forms bridge post holes
The protective layer that silicon layer is formed can all cover on the surface of the first amorphous silicon layer, prevent the electrode material layer being subsequently formed and first non-
Crystal silicon layer directly contacts, so as to remove when the first amorphous silicon layer forms hanging bridge structure in subsequent etching due to electrode material
The bed of material and the first amorphous silicon layer directly contact and the upper volume that generates.
The present invention is superimposed upon the surface of electrode material layer using ONO layer after electrode material layer is graphical, due to
ONO layer is the laminated construction of oxide layer and nitration case, and this structure is easily achieved in the internal stress to electrode material layer
With and itself inside ONO layer will not be increased by additional stress, the institute present invention can prevent electrode material layer due to internal stress
And it is rolled up on generating.
It is rolled up so the present invention can prevent bridge structure from generating, so as to prevent bridge structure from collapsing.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments:
Figure 1A-Fig. 1 D is the device architecture schematic diagram in each step of manufacturing method of existing MEMS bridge structure；
Fig. 2 is the flow chart of the manufacturing method of MEMS bridge structure of the embodiment of the present invention；
Fig. 3 A- Fig. 3 J is the device architecture signal in each step of manufacturing method of MEMS bridge structure of the embodiment of the present invention
Figure.
Specific embodiment
As shown in Fig. 2, being the flow chart of the manufacturing method of MEMS bridge structure of the embodiment of the present invention；Such as Fig. 3 A to Fig. 3 J institute
Show, is the device architecture schematic diagram in each step of manufacturing method of MEMS bridge structure of the embodiment of the present invention, the embodiment of the present invention
The manufacturing method of MEMS bridge structure includes the following steps:
Step 1: as shown in Figure 3A, providing substrate 1.
The substrate 1 is silicon substrate 1.Device architecture is formed on the substrate 1.
Later, as shown in Figure 3B, the first amorphous silicon layer 2 as supporting body is formed on 1 surface of substrate.
First amorphous silicon layer 2 is formed using CVD technique.
Step 2: as shown in Figure 3B, forming the first silicon dioxide layer 3 on 2 surface of the first amorphous silicon layer.
First silicon dioxide layer 3 is formed using CVD technique.Step 3: as shown in Figure 3 C, using lithographic definition plus quarter
Etching technique forms bridge post holes 201, and the bridge post holes 201 passes through first silicon dioxide layer 3 and first amorphous silicon layer 2.
Step 4: as shown in Figure 3D, forming the second silicon dioxide layer 4, second silicon dioxide layer 4 is covered on the bridge
The bottom surface of post holes 201 and side and the surface for extending to first silicon dioxide layer 3 outside the bridge post holes 201, institute
It states the first silicon dioxide layer 3 and second silicon dioxide layer 4 superposition forms and all covers on the surface of first amorphous silicon layer 2
Protective layer.
Second silicon dioxide layer 4 is formed using CVD technique.
Step 5: as shown in Figure 3D, forming the second amorphous silicon layer 5 as sensor film on the surface of the protective layer.
As shown in FIGURE 3 E, second amorphous silicon layer 5 is patterned using lithographic definition plus etching technics.Graphically
The overlay area of second amorphous silicon layer 5 includes the side of the bridge post holes 201 afterwards.
Step 6: as shown in FIGURE 3 E, performing etching and going the second silicon dioxide layer 4 described in the bottom of the bridge post holes 201
It removes and exposes 1 surface of substrate.
The region area that 1 surface of substrate is exposed after etching technics is less than the area of the bridge post holes 201.
Step 7: as illustrated in Figure 3 F, electrode material layer 6 is formed, using lithographic definition plus etching technics to the electrode material
The bed of material 6 is patterned, it is graphical after the electrode material layer 6 and second amorphous silicon layer 5 contact and in the bridge
The bottom of post holes 201 and the contact of 1 surface of the substrate.
The electrode material layer 6 is using TiN layer or using Ti layers and the superimposed layer of TiN layer.
The electrode material layer 6 with a thickness of
The electrode material layer 6 is formed using PVD process.
Step 8: as shown in Figure 3 G, forming ONO layer 7, the ONO layer 7 is by third silicon dioxide layer 7a, the 4th silicon nitride
Layer 7b and the 5th silicon dioxide layer 7c is formed by stacking；The ONO layer 7 is patterned using lithographic definition plus etching technics,
The ONO layer 7 after graphical is covered on the top of the electrode material layer 6 and for eliminating answering for the electrode material layer 6
Power.
The third silicon dioxide layer 7a, the 4th silicon nitride layer 7b and the 5th silica of the ONO layer 7
Layer 7c is respectively adopted corresponding CVD technique and sequentially forms.
The third silicon dioxide layer 7a with a thickness ofThe 4th silicon nitride layer 7b with a thickness ofThe 5th silicon dioxide layer 7c with a thickness of
Step 9: as shown in figure 3h, carrying out the etching of first amorphous silicon layer 2, removed in first amorphous silicon layer 2
Region formed and hollowed out area and form hanging bridge structure.
By the protective layer, second amorphous silicon layer 5, the electrode material layer 6 being formed in the bridge post holes 201
Bridge column is formed with the ONO layer 7 superposition
As shown in fig. 31, it is vertical view face structure chart after forming the bridge structure, includes induction on the substrate 1
Area 203, is formed with sensing device 204 in the induction zone 203, and the bridge structure and the sensing device 204 connect.
It as shown in figure 3j, is the film layer structure enlarged drawing for being formed by the bridge structure, such as the dotted line frame 202 in Fig. 3 H
The amplification region in shown region, it can be seen that the film layer structure of the bridge structure includes first titanium dioxide being formed by stacking
Silicon layer 3, second silicon dioxide layer 4, the electrode material layer 6 and by the third silicon dioxide layer 7a, the 4th nitrogen
SiClx layer 7b and the 5th silicon dioxide layer 7c are superimposed the ONO layer 7 to be formed.
It is also formed with after being formed as the first amorphous silicon layer 2 of supporting body as protective layer in the embodiment of the present invention
First silicon dioxide layer 3 is further added by the second silicon dioxide layer 4 as protective layer, the first He after etching forms bridge post holes 201
The protective layer that second silicon dioxide layer 4 is formed can all cover on the surface of the first amorphous silicon layer 2, prevent the electrode material being subsequently formed
The bed of material 6 and the first amorphous silicon layer 2 directly contact, and form hanging bridge so as to remove the first amorphous silicon layer 2 in subsequent etching
Due to electrode material layer 6 and the first amorphous silicon layer 2 directly contact and generate upper volume when structure.
The embodiment of the present invention is superimposed upon the table of electrode material layer 6 using ONO layer 7 after electrode material layer 6 is graphical
Face, due to the laminated construction that ONO layer 7 is oxide layer and nitration case, this structure is easily achieved the inside to electrode material layer 6
The neutralization of stress and itself will not increase the inside of ONO layer 7 by additional stress, the institute present invention can prevent electrode material layer 6 by
Upper volume is generated in internal stress.
It is rolled up so the embodiment of the present invention can prevent bridge structure from generating, so as to prevent bridge structure from collapsing.
The present invention has been described in detail through specific embodiments, but these are not constituted to limit of the invention
System.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these are also answered
It is considered as protection scope of the present invention.
Claims (15)
1. a kind of manufacturing method of MEMS bridge structure, which comprises the steps of:
Step 1: forming the first amorphous silicon layer as supporting body in substrate surface；
Step 2: forming the first silicon dioxide layer on first amorphous silicon layer surface；
Step 3: adding etching technics to form bridge post holes using lithographic definition, the bridge post holes passes through first silicon dioxide layer
With first amorphous silicon layer；
Step 4: formed the second silicon dioxide layer, second silicon dioxide layer be covered on the bridge post holes bottom surface and
Side and the surface for extending to first silicon dioxide layer outside the bridge post holes, first silicon dioxide layer and described
Two silicon dioxide layers are superimposed the protective layer to be formed and all cover on the surface of first amorphous silicon layer；
Step 5: the second amorphous silicon layer as sensor film is formed on the surface of the protective layer, using lithographic definition plus quarter
Etching technique is patterned second amorphous silicon layer；
The second silicon dioxide layer described in the bottom of the bridge post holes is removed and reveals the substrate surface Step 6: performing etching
Out；
Step 7: forming electrode material layer, the electrode material layer is patterned using lithographic definition plus etching technics, is schemed
The electrode material layer and second amorphous silicon layer contact after shape and bottom and the substrate in the bridge post holes
Surface contact；
Step 8: forming ONO layer, the ONO layer is laminated by third silicon dioxide layer, the 4th silicon nitride layer and the 5th silica
Add；The ONO layer is patterned using lithographic definition plus etching technics, it is graphical after the ONO layer be covered on
The top of the electrode material layer and the stress for being used to eliminate the electrode material layer；
Step 9: carrying out the etching of first amorphous silicon layer, vacancy section is formed in the region of first amorphous silicon layer removal
Domain simultaneously forms hanging bridge structure.
2. the manufacturing method of MEMS bridge structure as described in claim 1, it is characterised in that: the electrode material layer uses
TiN layer or the superimposed layer for using Ti layers and TiN layer.
3. the manufacturing method of MEMS bridge structure as claimed in claim 2, it is characterised in that: the thickness of the electrode material layer
For
4. the manufacturing method of MEMS bridge structure as claimed in claim 2, it is characterised in that: the electrode material layer uses
PVD process is formed.
5. the manufacturing method of MEMS bridge structure as described in claim 1, it is characterised in that: the substrate is silicon substrate.
6. the manufacturing method of MEMS bridge structure as claimed in claim 5, it is characterised in that: be formed with device over the substrate
Part structure.
7. the manufacturing method of MEMS bridge structure as claimed in claim 6, it is characterised in that: over the substrate include induction
Area, is formed with sensing device in the induction zone, and the bridge structure is connected with the sensing device.
8. the manufacturing method of MEMS bridge structure as described in claim 1, it is characterised in that: first amorphous silicon layer uses
CVD technique is formed.
9. the manufacturing method of MEMS bridge structure as described in claim 1, it is characterised in that: first silicon dioxide layer is adopted
It is formed with CVD technique, second silicon dioxide layer is formed using CVD technique.
10. the manufacturing method of MEMS bridge structure as described in claim 1, it is characterised in that: the third of the ONO layer
Corresponding CVD technique successively shape is all respectively adopted in silicon dioxide layer, the 4th silicon nitride layer and the 5th silicon dioxide layer
At.
11. the manufacturing method of MEMS bridge structure as claimed in claim 3, it is characterised in that: the third silicon dioxide layer
With a thickness of4th silicon nitride layer with a thickness ofThe thickness of 5th silicon dioxide layer
Degree is
12. the manufacturing method of MEMS bridge structure as claimed in claim 7, it is characterised in that: institute after graphical in step 5
The overlay area for stating the second amorphous silicon layer includes the side of the bridge post holes.
13. the manufacturing method of MEMS bridge structure as claimed in claim 12, it is characterised in that: the etching technics in step 6
The region area that the substrate surface exposes afterwards is less than the area of the bridge post holes.
14. the manufacturing method of MEMS bridge structure as claimed in claim 13, it is characterised in that: in step 3, each described
The side of induction zone includes two bridge post holes.
15. the manufacturing method of MEMS bridge structure as claimed in claim 14, it is characterised in that: in step 9, by being formed in
The protective layer, second amorphous silicon layer, the electrode material layer and the ONO layer in the bridge post holes are superimposed to form bridge
Column.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111517273A (en) * | 2020-04-02 | 2020-08-11 | 上海华虹宏力半导体制造有限公司 | MEMS bridge column structure and manufacturing method thereof |
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