CN110118599A - A kind of integrated singl e photon detection device - Google Patents
A kind of integrated singl e photon detection device Download PDFInfo
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- CN110118599A CN110118599A CN201810124836.0A CN201810124836A CN110118599A CN 110118599 A CN110118599 A CN 110118599A CN 201810124836 A CN201810124836 A CN 201810124836A CN 110118599 A CN110118599 A CN 110118599A
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- 238000001514 detection method Methods 0.000 title claims abstract description 38
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims abstract description 35
- 238000005057 refrigeration Methods 0.000 claims abstract description 20
- 238000009413 insulation Methods 0.000 claims abstract description 10
- 239000003990 capacitor Substances 0.000 claims description 18
- 238000007789 sealing Methods 0.000 claims description 11
- 238000012216 screening Methods 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 8
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- 239000013307 optical fiber Substances 0.000 claims description 6
- 230000005693 optoelectronics Effects 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 230000001360 synchronised effect Effects 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 abstract description 2
- 230000001737 promoting effect Effects 0.000 abstract 1
- 238000005457 optimization Methods 0.000 description 9
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- 238000004891 communication Methods 0.000 description 5
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- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
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- 230000011664 signaling Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J11/00—Measuring the characteristics of individual optical pulses or of optical pulse trains
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/70—Photonic quantum communication
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4413—Type
- G01J2001/442—Single-photon detection or photon counting
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/446—Photodiode
- G01J2001/4466—Avalanche
Abstract
A kind of integrated singl e photon detection device, including refrigeration module, temperature sensor module, avalanche photodide module, narrow pulse signal generation module, avalanche signal screens module, I/O module, it is heat sink, delay circuit, seal heat insulation packed module, the heat sink top that refrigeration module is set, avalanche photodide module is arranged in the lower section of refrigeration module and is close to refrigeration module, the side of avalanche photodide module is arranged in temperature sensor module, delay circuit, narrow pulse signal generation module, avalanche signal screens the lower section that module or so sets gradually and is located at avalanche photodide module, delay circuit is arranged in I/O module and avalanche signal screens the left and right sides of module.The advantages of integrated singl e photon detection device, is: after integrated, promoting detector device subminaturization, due to the parasitic parameter of the integrated original independent component scheme modules of removal, also improves signal quality.
Description
Technical field
The present invention relates to Technique on Quantum Communication field more particularly to a kind of integrated singl e photon detection devices.
Background technique
In quantum communications field, use light as information carrier.For security performance raising, the light of transmission is quantum state,
That is single photon.Singl e photon detection functional module is the necessary module of this communication equipment.Existing singl e photon detection scheme is as follows:
1, avalanche photodide module carries out needing low temperature environment when singl e photon detection.It is provided using aluminum seal box.
Box body sealing, foam or the filling of other heat preserving and insulating materials.Use heat in conventional refrigerant module taking case to box body.Outside box body
Heat on box body is exchanged in air using fan.
2, avalanche photodide module detection single photon needs work in state appropriate.Avalanche photodide module
Including driving circuit and diode D1, wherein the driving plate for being welded with driving circuit is located at tray interior, avalanche photodide
D1 is directly welded on avalanche photodide module drive plate.Driving plate inputs external drive signal, exports the original detected
The photon signal of beginning.Driving plate is simultaneously temperature sensor module temperature signal attached on avalanche photodide module housing
Output.
3, avalanche signal discriminator circuit plate passes through the photon signal that cable reception is exported to avalanche photodide module, and
This signal is screened.
4, the temperature of diode D1 is detected by being adhered to the thermistor on its surface in avalanche photodide module.
5, avalanche signal discriminator circuit plate generates the driving analog signal that avalanche photodide module needs.
6, avalanche signal discriminator circuit plate acquires avalanche photodide module temperature signal, and passes through PI algorithm control electricity
Power supply of the source to refrigeration module.
To sum up, the technology major defect of existing singl e photon detection functional module are as follows:
1, volume is big.
2, components are more, and supplier is different, and technique difference is big.
3, overall power is big.
4, installation and debugging are complicated, complex process.
5, signaling interface is more, and signal transmission path is long, and signal kinds are more, is lost in transmission process big.
Summary of the invention
The purpose of the present invention is to solve singl e photon detection device components in the prior art are more, volume is big, and installation is adjusted
Complicated problem is tried, a kind of miniaturization, the simply integrated singl e photon detection device of installation and debugging are provided.
To achieve the goals above, technical scheme is as follows:
A kind of integrated singl e photon detection device, including refrigeration module, temperature sensor module, avalanche photodide mould
Block, narrow pulse signal generation module, avalanche signal screen module, I/O module, heat sink, delay circuit, sealing heat insulation packed module,
The heat sink top that refrigeration module is arranged in, avalanche photodide module are arranged in the lower section of refrigeration module and are close to the mould that freezes
Block, temperature sensor module are arranged in the side of avalanche photodide module, delay circuit, narrow pulse signal generation module,
Avalanche signal screens the lower section that module or so sets gradually and is located at avalanche photodide module, and I/O module setting is in delay electricity
Road and avalanche signal screen the left and right sides of module, refrigeration module, temperature sensor module, avalanche photodide module, narrow
Pulse signal generation module, avalanche signal screen module, heat sink, delay circuit is arranged in sealing heat insulation packed module.
Optimization, I/O module includes input terminal and output end, and the input terminal includes power end, photon synchronization signal a defeated
Enter end, discriminator input terminal, optical signal input, by delay chip number control terminal, time delay interval control terminal；It is described defeated
Outlet includes temperature sensor signal output end, snowslide terminal count output.
Optimization, temperature sensor module includes temperature sensor and D/A converting circuit, avalanche photodide module
Including diode drive circuit and diode D1, the test side of temperature sensor is arranged in the side diode D1.
Optimization, optical fiber is provided on the sealing heat insulation packed module housing, the photon irradiation of the optical fiber input exists
On diode D1.
Optimization, the input terminal of the delay circuit includes photon synchronization signal a input terminal, by delay chip time numerical control
End processed, time delay interval control terminal, the output end of the delay circuit is connect with the input terminal of narrow pulse signal generation module, described
Narrow pulse signal generation module includes the first output end of signal, signal second output terminal, and it includes screening that avalanche signal, which screens module,
First input end screens the second input terminal, screens output end, first output end of signal and avalanche photodide module
Input terminal connection, another input terminal of the avalanche photodide module are optical signal input, avalanche photodide
The output end of module is connect with first input end is screened, and signal second output terminal is connect with the second input terminal is screened, the snowslide
Signal screening module also has discriminator input terminal, the output end for screening output end as whole device.
Optimization, the delay circuit includes or door chip, the first delay chip, selection chip, control select circuit, and described the
One delay chip further includes time delay interval control terminal or door chip, the first delay chip, selection chip is sequentially connected electrically or door
One input terminal of chip as entire delay circuit input terminal and input photon synchronization signal a, it is described selection chip it is defeated
Outlet includes two, one of output end as delay circuit, another with or another input terminal of door chip connect, choosing
Selecting chip includes selection control terminal, and control selects the output end of circuit to connect with the selection control terminal.
Optimization, it includes counter, comparator that circuit is selected in the control, the counter include reset terminal, clock signal terminal,
Output end, reset terminal are connect with input photon synchronization signal a's or door input terminal, clock signal terminal and the first delay chip
Output end connection, the output end of the counter and an input terminal of comparator connect, another input of the comparator
End is connected through delay chip time number control device, the output end of comparator and institute as delay chip number control terminal is passed through
The selection control terminal connection stated.
Optimization, the narrow pulse signal generation module includes the first driving part, the second driving part, the second delay core
Piece, third delay chip, the first NAND gate chip, the second NAND gate chip；First driving part includes that driving first is defeated
Enter end, the first output end of driving and driving second output terminal, second driving part includes the second input terminal of driving, driving the
The 4th output end of three output ends and driving, the driving first input end and the second input terminal of driving are defeated with delay circuit respectively
Outlet connection is input time delay output signal b, and the first output end of the driving is connect with the input terminal of the second delay chip, described
The output end of second delay chip is connect with an input terminal of the first NAND gate chip, the driving second output terminal with
Another input terminal of first NAND gate chip is directly connected to, and the output end of the first NAND gate chip exports gate signal c；It is described
Driving third output end connect with the input terminal of third delay chip, the output end of the third delay chip and described second and
One input terminal of NOT gate chip connects, and another input terminal of driving the 4th output end and the second NAND gate chip directly connects
It connects, the output end output of the second NAND gate chip meets gate signal d.
Optimization, the avalanche photodide module includes diode D1, triode Q1, resistance R1, resistance R2, resistance
R3, capacitor C1, the first level terminal, second electrical level end, the one end the resistance R1 are the input terminal of avalanche photodide module, with
The output end of narrow pulse signal generation module connects, and receives the gate signal c for the specific width that narrow pulse signal generation module generates,
The other end of the resistance R1 is connect with the base stage of triode Q1, and the first level terminal passes through the collector of resistance R2 and triode Q1
Connection, the collector of triode Q1 are also connect with the cathode of diode D1, and the anode of diode D1 passes through the electricity of resistance R3 and second
The anode of flush end connection, diode D1 is connect with one end of capacitor C1, and the other end of capacitor C1 is as avalanche photodide mould
The output end of block.
Optimization, it includes triode Q2, triode Q3, triode Q4, resistance R4, resistance that the avalanche signal, which screens module,
R5, resistance R6, resistance R7, resistance R8, capacitor C2, the first power supply VCC, discriminator input terminal Vth, current source, three pole
The base stage of pipe Q2 is connect with the output end of narrow pulse signal generation module, and receive specific width meets gate signal d, the first power supply
VCC is connect by resistance R4 with the collector of triode Q2；The output end of avalanche photodide module passes through resistance R5 and three
The base stage of pole pipe Q3 connects；Discriminator input terminal Vth is also connect with the base stage of triode Q3 by resistance R6, the first power supply warp
It crosses resistance R7 to connect with the collector of triode Q3, the collector of triode Q3 is connect with one end of capacitor C2, and capacitor C2's is another
One end is as snowslide terminal count output；Discriminator input terminal Vth is connect by resistance R8 with the base stage of triode Q4, the first electricity
Source VCC is directly connect with the collector of triode Q4；The emitter of triode Q2, the emitter of triode Q3, triode Q4
It is connected to ground behind overcurrent source after the connection of three end of emitter.
The present invention has the advantages that
(1) the invention proposes a kind of integrated singl e photon detection devices, after integrated, remove original independent component scheme
The parasitic parameter of modules improves signal quality.The route that signal whole flow process is passed through, is physically greatly shortening,
The interference of outer bound pair whole device is also reduced in the identical situation of interference in unit area, and then improves overall performance.Collection
Detector device subminaturization is also promoted after.
(2) present invention screens in module since gate signal c will arrive again avalanche signal by avalanche photodide module, and
Meet gate signal d directly to arrive in avalanche signal examination module, when not integrated, optical cable has certain length, two pole of avalanche optoelectronic
Impedance matching is just needed in tube module, is required to connection delay core in narrow pulse signal generation module before two input terminals of NAND gate
Piece, but it is integrated after since apart from short, integrated gate signal c and the relative position for meeting gate signal d are that fixation can calculate,
So the delay chip in two input terminal of NAND gate before an input terminal can be removed, to reduce the quantity of components, drop
Low power consumption increases dynamic delay range.It is straight between diode D1 and triode after integrated in avalanche photodide module
Coupling control is connect, so not needing impedance matching, reduces power consumption.Since the distance of intermodule reduces, delay chip is saved, this
The efficiency and rate of sample whole device work can all improve.
(3) by the way that after integrated, signaling interface quantity is reduced so that the device connect with external equipment it is simple and convenient.
Detailed description of the invention
Fig. 1 is a kind of interior layout figure of integrated singl e photon detection device provided in an embodiment of the present invention.
Fig. 2 is a kind of internal circuit blocks connection figure of integrated singl e photon detection device of the present invention.
Fig. 3 is the circuit diagram of delay circuit in a kind of integrated singl e photon detection device of the present invention.
Fig. 4 is a kind of delay circuit timing diagram of integrated singl e photon detection device of the present invention.
Fig. 5 is the circuit diagram of narrow pulse signal generation module in a kind of integrated singl e photon detection device of the present invention.
Fig. 6 is the timing diagram of narrow pulse signal generation module in a kind of integrated singl e photon detection device of the present invention.
Fig. 7 is the circuit diagram of avalanche photodide module in a kind of integrated singl e photon detection device of the present invention.
Fig. 8 is the circuit diagram of snowslide signal screening module in a kind of integrated singl e photon detection device of the present invention.
Specific embodiment
Embodiment 1
The embodiment is the description of the interior layout of integrated singl e photon detection device.
As shown in Figure 1, a kind of integrated singl e photon detection device, including refrigeration module 1, temperature sensor module 2, snowslide
Photodiode module 3, narrow pulse signal generation module 4, avalanche signal screen module 5, I/O module 6, heat sink 7, delay circuit
9, heat insulation packed module 8 is sealed, heat sink 7 are arranged in the top of refrigeration module 1, and the setting of avalanche photodide module 3 is being freezed
Refrigeration module 1 is simultaneously close in the lower section of module 1, and temperature sensor module 2 is arranged in the side of avalanche photodide module 3, prolongs
When circuit 9, narrow pulse signal generation module 4, avalanche signal screen module 5 or so set gradually and be located at avalanche photodide
The lower section of module 3, delay circuit 9 is arranged in I/O module 6 and avalanche signal screens the left and right sides of module 5.Refrigeration module 1, temperature
It spends sensor module 2, avalanche photodide module 3, narrow pulse signal generation module 4, avalanche signal and screens module 5, heat sink
7, delay circuit 9 is arranged in sealing heat insulation packed module 8.Sealing heat insulation packed module 8 can increase entire reception device
Anti-interference ability, and then improve overall performance.Since integrated seal is sealing off package module after module placement each in device
It is interior, so that whole device volume reduces, and can promote detector device subminaturization.
In detail, refrigeration module 1 is TEC refrigerator.
I/O module 6 includes input terminal and output end, and the input terminal includes power end, photon synchronization signal a input terminal, discriminates
Other threshold value input, optical signal input, by delay chip number control terminal, time delay interval control terminal.Output end includes temperature
Spend sensor signal output end, snowslide terminal count output.
Temperature sensor module 2 includes temperature sensor and D/A converting circuit, and avalanche photodide module 3 includes two
The test side of pole pipe driving circuit and diode D1, temperature sensor are arranged in the side diode D1, the signal of temperature sensor
The connection of the input terminal of output end and D/A converting circuit, the output end of D/A converting circuit is as temperature sensor signal output end
And it is exported from I/O module 6.Temperature sensor signal output end exports 8 or 16 position digital signals.
The components such as refrigeration module 1 therein, avalanche photodide module 3 all select miniaturized components, and connection side
Formula and the structure of setting minimize quantum communications field single photon detection optical-electric module；Also make quantum communications field single
Photon detection device miniaturization.Modular setting enhances the job stability of device, increases anti-interference ability, and then improve
Overall performance.By encapsulating the amount of parts reduced in whole system, and entire integrated singl e photon detection is unified
Device and manufacture craft.
Embodiment 2
The embodiment is the description to the connection of integrated singl e photon detection device internal circuit blocks.
As shown in Fig. 2, the input terminal of delay circuit 9 includes photon synchronization signal a input terminal, by delay chip time numerical control
End processed, time delay interval control terminal, the output end of delay circuit 9 is connect with the input terminal of narrow pulse signal generation module 4, described narrow
Pulse signal generation module 4 includes the first output end of signal, signal second output terminal, and it includes screening that avalanche signal, which screens module 5,
First input end screens the second input terminal, screens output end, the first output end of signal of the narrow pulse signal generation module 4
It is connect with an input terminal of avalanche photodide module 3, another input terminal of photodiode module 3 is that optical signal is defeated
Enter end, the output end of avalanche photodide module 3 is connect with first input end is screened, the letter of narrow pulse signal generation module 4
Number second output terminal connect with the second input terminal of examination that avalanche signal screens module 5, and avalanche signal, which screens module 5, also has Zhen
Other threshold value input, the examination output end that the avalanche signal screens module 5 is snowslide terminal count output.Using above-mentioned connection side
The course of work of the circuit module of formula is as follows:
Externally input photon synchronization signal a first passes through delay circuit 9 and generates delay output signal b, delay output signal b
It is input to narrow pulse signal generation module 4, narrow pulse signal generation module 4 generates the gate signal c and specific width of specific width
Meet gate signal d.Gate signal c is input in avalanche photodide module 3, is generated avalanche signal e and is input to snowslide letter
Number screen module 5 examination first input end.Meet gate signal d and is input to the input of examination second that avalanche signal screens module 5
End, avalanche signal screen module 5 and export snowslide counting pulse signal f to outside according to the discriminator of outside setting.
Embodiment 3
The embodiment is the description to delay circuit 9.
As shown in Figure 3-4, delay circuit 9 include or door chip 91, the first delay chip 95, selection chip 94, control choosing electricity
Road or door chip 91, the first delay chip 95, selection chip 94 is sequentially connected electrically or an input terminal conduct of door chip 91
The input terminal of entire delay circuit 9 simultaneously inputs photon synchronization signal a, and the output end of the selection chip 94 includes two, wherein
One output end as delay circuit 9 exports delay output signal b, another with or another input terminal of door chip 91 connect
Timing circuit is formed, selecting chip 94 includes selection control terminal, and control selects the output end of circuit to connect with the selection control terminal.
First delay chip 95 further includes time delay interval control terminal, and the control selects circuit to include counter 92, compare
Device 93, the counter 92 include reset terminal, clock signal terminal, output end, and reset terminal and input photon synchronization signal be a's or door
Input terminal connection, clock signal terminal connect with the output end of the first delay chip 95, and one of output end and comparator 93 is defeated
Enter end connection, another input terminal of comparator 93, which is used as, passes through delay chip number control terminal, is connected through delay chip
Number control device, the output end of comparator 93 are connect with the selection control terminal.
9 main function of delay circuit is delayed to signal.Core component is the first delay chip 95.By to delay
Being multiplexed to reduce the use number of delay chip for chip, reduces overall power, increases dynamic delay range.
The signal of photon synchronization signal a input terminal input is to need the signal that is delayed by, the time of delay can pass through through
Delay chip time number control device and time delay interval control terminal are crossed to be arranged, selects chip 94 according to Rule of judgment come handoff delay
Photon synchronization signal a afterwards is directly as delay output signal b or to be again inputted into the first delay chip 95.
The number for passing through delay chip by delay chip time number control device setting signal, the input as comparator 93
Parameter.
When the numerical value of time delay interval control terminal input is equal to the numerical value by delay chip time number control device input, choosing
The selection of chip 94 is selected to export delay output signal from delay circuit 9.In Fig. 4, when count value (time delay interval control terminal input
Numerical value) it is equal with numerical value (by the numerical value of delay chip time number control device input) of delay setting when, i.e., when being all H4,
The selection selection of chip 94 exports delay output signal b.
Embodiment 4
The embodiment is the description to narrow pulse signal generation module 4.
As seen in figs. 5-6, the narrow pulse signal generation module 4 include the first driving part 41, the second driving part 42,
Second delay chip 43, third delay chip 44, the first NAND gate chip 45, the second NAND gate chip 46.
First driving part 41 includes driving first input end, the first output end of driving and drives second output terminal,
Second driving part 42 includes the 4th output end of the second input terminal of driving, driving third output end and driving.
The driving first input end and the second input terminal of driving connect i.e. input with the output end of delay circuit 9 respectively and prolong
When output signal b.
The first output end of the driving is connect with the input terminal of the second delay chip 43, the output end of the second delay chip 43
It is connect with an input terminal of the first NAND gate chip 45, the driving second output terminal is another with the first NAND gate chip 45
Input terminal is directly connected to, and the output end of the first NAND gate chip 45 exports gate signal c.The driving third output end prolongs with third
When chip 44 input terminal connection, the input terminal company of the output end of third delay chip 44 and the second NAND gate chip 46
It connects, another input terminal of driving the 4th output end and the second NAND gate chip 46 is directly connected to, the second NAND gate chip 46
Output end output meet gate signal d.
In the above-mentioned technical solutions, the effect of the first driving part 41 and the second driving part 42 is to prevent electricity shortage,
Waveform deforms.There are certain requirement, the second delay chip for inside modules power consumption in electronic circuit due to integrated
43 and third delay chip 44 be integrated in a binary channels delay chip, correspondingly, the first driving part 41 and the second driving
Component 42 is replaced using a binary channels driving device or multichannel driving device.
In Fig. 6, two input terminals of the first input terminal of NAND gate chip 45 two and the second NAND gate chip 46 when
Timing A, timing B, timing E, timing D in sequence figure such as figure.
Embodiment 5
The embodiment is the description to avalanche photodide module 3.
As shown in fig. 7, the avalanche photodide module 3 include diode D1, triode Q1, resistance R1, resistance R2,
Resistance R3, capacitor C1, the first level terminal, second electrical level end, the one end the resistance R1 are the input of avalanche photodide module 3
End, connect with the output end of the first NAND gate chip 45 in narrow pulse signal generation module 4, receives narrow pulse signal generation module
The gate signal c of 4 specific widths generated, the other end of the resistance R1 are connect with the base stage of triode Q1, the first level terminal warp
It crosses resistance R2 to connect with the collector of triode Q1, the collector of triode Q1 is also connect with the cathode of diode D1, diode
The anode of D1 is connect by resistance R3 with second electrical level end, and the anode of diode D1 is connect with one end of capacitor C1, capacitor C1's
Output end of the other end as avalanche photodide module 3.First level terminal voltage value is 5V, and pressure differential range is positive and negative 2V,
Second electrical level terminal voltage value is -60V, and pressure differential range is positive and negative 10V.It is provided with optical fiber on sealing 8 shell of heat insulation packed module, institute
The photon for stating optical fiber input is radiated on diode D1 as optical signal.Since the device integrated level is high, triode Q1 and two poles
Direct-coupling controls between pipe D1, can not consider impedance matching, since impedance matching is needed using larger resistance, so integrated
After reduce loss.
Embodiment 6
The embodiment is that the description of module 5 is screened to avalanche signal.
As shown in figure 8, the avalanche signal screen module 5 include triode Q2, triode Q3, triode Q4, resistance R4,
Resistance R5, resistance R6, resistance R7, resistance R8, capacitor C2, the first power supply VCC, discriminator input terminal Vth, current source, it is described
The base stage of triode Q2 is connect with the output end of the second NAND gate chip 46 in narrow pulse signal generation module 4, receive second with
The specific width that NOT gate chip 46 exports meets gate signal d.First power supply VCC passes through the collector of resistance R4 and triode Q2
Connection.The output end of avalanche photodide module 3 is connect by resistance R5 with the base stage of triode Q3.Discriminator input terminal
Vth is also connect with the base stage of triode Q3 by resistance R6, and the first power supply VCC connects by the collector of resistance R7 and triode Q3
It connects, the collector of triode Q3 is connect with one end of capacitor C2, and the other end of capacitor C2 is as snowslide terminal count output.Discriminating threshold
Value input terminal Vth is connect by resistance R8 with the base stage of triode Q4, and the first power supply VCC directly connects with the collector of triode Q4
It connects.The emitter of triode Q2, the emitter of triode Q3, triode Q4 three end of emitter connection after behind overcurrent source with
Ground connection.The resistance value of resistance R8 in the program is less than the resistance value of resistance R6.The function that avalanche signal screens module 5 is to meet
In the gate signal d time, when avalanche signal level is higher than discriminator, snowslide counting pulse signal f is exported.
The above is only the preferred embodiments of the invention, are not intended to limit the invention creation, all in the present invention
Made any modifications, equivalent replacements, and improvements etc., should be included in the guarantor of the invention within the spirit and principle of creation
Within the scope of shield.
Claims (10)
1. a kind of integrated singl e photon detection device, which is characterized in that including refrigeration module, temperature sensor module, snowslide light
Electric diode module, narrow pulse signal generation module, avalanche signal screen module, I/O module, heat sink, delay circuit, sealing every
The lower section of refrigeration module is arranged in simultaneously in heat-seal module, the heat sink top that refrigeration module is arranged in, avalanche photodide module
It is close to refrigeration module, the side of avalanche photodide module, delay circuit, narrow pulse signal is arranged in temperature sensor module
Generation module, avalanche signal screen the lower section that module or so sets gradually and is located at avalanche photodide module, and I/O module is set
It sets and screens the left and right sides of module, refrigeration module, temperature sensor module, two pole of avalanche optoelectronic in delay circuit and avalanche signal
Tube module, narrow pulse signal generation module, avalanche signal screen module, heat sink, delay circuit is arranged at sealing heat insulation packed
In module.
2. a kind of integrated singl e photon detection device according to claim 1, which is characterized in that the I/O module includes defeated
Enter end and output end, the input terminal includes that power end, photon synchronization signal a input terminal, discriminator input terminal, optical signal are defeated
Enter end, by delay chip number control terminal, time delay interval control terminal；The output end includes temperature sensor signal output
End, snowslide terminal count output.
3. a kind of integrated singl e photon detection device according to claim 1, which is characterized in that the temperature sensor mould
Block includes temperature sensor and D/A converting circuit, and the avalanche photodide module includes diode drive circuit and two poles
The test side of pipe D1, temperature sensor are arranged in the side diode D1.
4. a kind of integrated singl e photon detection device according to claim 3, which is characterized in that the sealing heat insulation packed
Optical fiber is provided on module housing, the photon irradiation of the optical fiber input is on the diode D1.
5. a kind of integrated singl e photon detection device according to claim 1, which is characterized in that the delay circuit it is defeated
Entering end includes photon synchronization signal a input terminal, by delay chip number control terminal, time delay interval control terminal, the delay electricity
The output end on road is connect with the input terminal of the narrow pulse signal generation module, and the narrow pulse signal generation module includes signal
First output end, signal second output terminal, it includes screening first input end, screening the second input that the avalanche signal, which screens module,
Output end is screened at end, and first output end of signal is connect with the input terminal of the avalanche photodide module, the snowslide
Another input terminal of photodiode module is optical signal input, the output end of the avalanche photodide module and institute
It states and screens first input end connection, the signal second output terminal is connect with the second input terminal of the examination, the avalanche signal
Screening module also has discriminator input terminal, the output end for screening output end as whole device.
6. a kind of integrated singl e photon detection device according to claim 1, which is characterized in that the delay circuit includes
Or door chip, the first delay chip, selection chip, control select circuit, first delay chip further includes time delay interval control terminal,
Described or door chip, the first delay chip, selection chip are sequentially connected electrically, and described or door chip the input terminal is as entire
The input terminal of delay circuit simultaneously inputs photon synchronization signal a, and the output end of the selection chip includes two, one of conduct
The output end of delay circuit, another connect with described or door chip another input terminal, and the selection chip includes selection control
End processed, the control select the output end of circuit to connect with the selection control terminal.
7. a kind of integrated singl e photon detection device according to claim 6, which is characterized in that the control selects the circuit to include
Counter, comparator, the counter include reset terminal, clock signal terminal, output end, and the reset terminal is synchronous with input photon
Signal a's or door input terminal connection, the clock signal terminal are connect with the output end of first delay chip, the counting
The output end of device is connect with an input terminal of the comparator, another input terminal of the comparator is used as by delay core
Piece number control terminal, is connected through delay chip time number control device, and the output end of the comparator and the selection control
End connection.
8. according to claim 1 to a kind of integrated singl e photon detection device described in 7 any one, which is characterized in that described
Narrow pulse signal generation module includes the first driving part, the second driving part, the second delay chip, third delay chip, the
One NAND gate chip, the second NAND gate chip；First driving part includes driving first input end, the first output end of driving
With driving second output terminal, second driving part includes the second input terminal of driving, driving third output end and driving the 4th
Output end, the driving first input end and the second input terminal of driving connect i.e. input time delay with the output end of delay circuit respectively
Output signal b, the first output end of the driving are connect with the input terminal of the second delay chip, the output of second delay chip
End is connect with an input terminal of the first NAND gate chip, and the driving second output terminal is another with the first NAND gate chip
One input terminal is directly connected to, and the output end of the first NAND gate chip exports gate signal c；The driving third output end and
The input terminal of three delay chips connects, an input of the output end of the third delay chip and the second NAND gate chip
Another input terminal of end connection, driving the 4th output end and the second NAND gate chip is directly connected to, second NAND gate
The output end output of chip meets gate signal d.
9. a kind of integrated singl e photon detection device according to claim 1, which is characterized in that two pole of avalanche optoelectronic
Tube module includes diode D1, triode Q1, resistance R1, resistance R2, resistance R3, capacitor C1, the first level terminal, second electrical level
End, the one end the resistance R1 are the input terminal of the avalanche photodide module, the output with narrow pulse signal generation module
End connection, receive narrow pulse signal generation module generate specific width gate signal c, the other end of the resistance R1 with it is described
The base stage of triode Q1 connects, and first level terminal is connect by the resistance R2 with the collector of the triode Q1, institute
The collector for stating triode Q1 is also connect with the cathode of the diode D1, and the anode of the diode D1 passes through the resistance R3
It is connect with the second electrical level end, the anode of the diode D1 is connect with one end of the capacitor C1, and the capacitor C1's is another
Output end of the one end as the avalanche photodide module.
10. a kind of integrated singl e photon detection device according to claim 1, which is characterized in that the avalanche signal is discriminated
Other module includes triode Q2, triode Q3, triode Q4, resistance R4, resistance R5, resistance R6, resistance R7, resistance R8, capacitor
C2, the first power supply VCC, discriminator input terminal Vth, current source, the base stage of the triode Q2 and the narrow pulse signal produce
The output end connection of raw module, receive specific width meets gate signal d, the first power supply VCC by the resistance R4 with
The collector of the triode Q2 connects；The output end of the avalanche photodide module passes through the resistance R5 and described three
The base stage of pole pipe Q3 connects；The discriminator input terminal Vth also connects with the base stage of the triode Q3 by the resistance R6
It connects, first power supply is connect by the resistance R7 with the collector of the triode Q3, the collector of the triode Q3
It is connect with one end of the capacitor C2, the other end of the capacitor C2 is as snowslide terminal count output；The discriminator input
End Vth is connect by the resistance R8 with the base stage of the triode Q4, the first power supply VCC directly with the triode Q4
Collector connection；The emitter of the triode Q2, the emitter of the triode Q3, the triode Q4 emitter three
It is connected to ground after the current source after the connection of end.
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