CN110112304B - Preparation method of light emitting layer and display device - Google Patents
Preparation method of light emitting layer and display device Download PDFInfo
- Publication number
- CN110112304B CN110112304B CN201910362270.XA CN201910362270A CN110112304B CN 110112304 B CN110112304 B CN 110112304B CN 201910362270 A CN201910362270 A CN 201910362270A CN 110112304 B CN110112304 B CN 110112304B
- Authority
- CN
- China
- Prior art keywords
- emitting layer
- light emitting
- substrate
- layer
- evaporating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a preparation method of a light-emitting layer and a display device. The preparation method of the luminescent layer comprises the steps of S1, providing a substrate, S2, evaporating a green luminescent layer on the substrate, S3, damaging the green luminescent layer in the left side and the middle area by using UV light, S4, evaporating a red luminescent layer on the substrate, S5, damaging the red luminescent layer in the leftmost area by using UV light, S6, evaporating a blue luminescent layer on the substrate, S7, evaporating an electron transport layer, an electron injection layer and a cathode on the substrate, packaging, S8, conducting voltage application treatment on the device packaged in the step S7, and damaging the blue luminescent layer in the middle area, and the red luminescent layer and the blue luminescent layer in the right area. The RGB light-emitting layer is processed by twice UV light irradiation and voltage application, and the OLED light-emitting device without a color filter and a metal mask evaporation device is realized.
Description
Technical Field
The invention relates to the technical field of display, in particular to a preparation method of a light-emitting layer and a display device.
Background
Display panels, such as Organic Light-Emitting diodes (OLEDs), have attracted great attention in academia and industry because of their great potential for development in the direction of solid-state lighting and flat panel displays.
Currently, in terms of large size, the commercial OLED panel usually has a multi-layer structure, and the full Color is realized by a Color Filter (CF). And the small-size OLED light-emitting panel adopts a Fine Metal Mask (FMM) technology to perform evaporation of RGB materials. The fine mask plate is thin (10-100 μm), the minimum opening size is about 20 μm, the positioning precision is about 3 μm, and the processing precision requirement is high. In addition, with the increase of the size of the FMM, the middle of the FMM is also easily deformed, which causes dislocation of the evaporation material, and finally causes phenomena of dislocation and color mixing of the EML layer, incapability of covering the metal via hole, and the like. Therefore, it is difficult to achieve the FMM with a large area, a low weight, a low thermal expansion coefficient, and the like.
In summary, in the prior art, when the metal mask is used for manufacturing the OLED device, the large-sized metal mask is not easy to manufacture, the manufacturing cost is high, and the metal mask needs to be cleaned periodically after evaporation for several times, otherwise the metal mask is easy to block.
Disclosure of Invention
The invention provides a preparation method of a luminescent layer and a display device, which can treat RGB luminescent layers through twice UV light irradiation and voltage application, realize the preparation of evaporation devices without color filters and metal masks, and solve the problems that in the prior art, when an OLED device is prepared by using the metal masks, the large-size metal masks are difficult to prepare, the manufacturing cost is high, the metal masks need to be cleaned regularly after being evaporated for several times, and the metal masks are easy to block.
In order to solve the above problems, the technical scheme provided by the invention is as follows:
the invention provides a preparation method of a luminescent layer, which comprises the following steps:
s1, providing a substrate, wherein the substrate comprises a left area, a middle area and a right area;
s2, evaporating a green light emitting layer on the substrate;
s3, irradiating and destroying the green light emitting layer on the left area and the middle area of the substrate with UV light, leaving the green light emitting layer on the right area of the substrate;
s4, evaporating a red light emitting layer on the substrate processed in the step S3;
s5, irradiating and destroying the red light emitting layer on the left side area of the substrate by the UV light, and remaining the red light emitting layer on the middle area and the right side area of the substrate;
s6, evaporating and plating a blue light emitting layer on the substrate processed in the step S5;
s7, evaporating an electron transport layer, an electron injection layer and a cathode on the substrate processed by the step S6, and encapsulating the light emitting layer;
s8, subjecting the light emitting layer encapsulated in the step S7 to voltage applying treatment, and destroying the blue light emitting layer on the middle region of the substrate and the red light emitting layer and the blue light emitting layer on the right region of the substrate.
According to the method for manufacturing a light-emitting layer provided by the embodiment of the invention, the substrate in step S1 is a substrate on which the evaporation treatment of the hole injection layer and the hole transport layer is performed.
According to the method for manufacturing the light emitting layer provided by the embodiment of the invention, the wavelength of the UV light in the step S3 is 254 nm.
According to the method for manufacturing the light emitting layer provided by the embodiment of the invention, the illuminance of the UV light in step S3 is 28 mw/cm.
According to the method for manufacturing the light emitting layer provided by the embodiment of the invention, the processing time of the UV light in the step S3 is 600 seconds.
According to the method for manufacturing the light emitting layer provided by the embodiment of the present invention, before the light emitting layer is subjected to the pass voltage processing in step S8, the green light emitting layer, the red light emitting layer, and the blue light emitting layer are subjected to the maximum voltage withstand test.
According to the preparation method of the light emitting layer provided by the embodiment of the invention, evaporation is carried out according to the sequence that the maximum voltage which can be borne by the green light emitting layer, the red light emitting layer and the blue light emitting layer is sequentially reduced.
According to the preparation method of the light emitting layer provided by the embodiment of the invention, the evaporation sequence of the light emitting layer is that the green light emitting layer is evaporated firstly, then the red light emitting layer is evaporated, and finally the blue light emitting layer is evaporated.
According to the method for manufacturing the light emitting layer provided by the embodiment of the present invention, the step S8 further includes adjusting the voltage value and the power-on time of the power-on voltage to process the green light emitting layer, the red light emitting layer, and the blue light emitting layer.
The embodiment of the invention also provides a display device, and the luminescent layer prepared by the preparation method of the luminescent layer is used.
The invention has the beneficial effects that: according to the preparation method of the light emitting layer and the display device, the RGB light emitting layer is processed through twice UV light irradiation and voltage application, and the OLED light emitting device without a color filter and a metal mask evaporation device is realized.
Drawings
In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the invention, and it is obvious for a person skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a flowchart illustrating step S1 according to an embodiment of the present invention.
FIG. 2 is a flowchart illustrating steps S2 and S3 according to an embodiment of the present invention.
FIG. 3 is a flowchart illustrating steps S4, S5, and S6 according to an embodiment of the present invention.
Fig. 4 is a flowchart illustrating step S7 according to an embodiment of the present invention.
Fig. 5 is a flowchart illustrating step S8 according to an embodiment of the present invention.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings that illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], are only referring to the directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention. In the drawings, elements having similar structures are denoted by the same reference numerals.
The invention aims at solving the problems that in the prior art, when the metal mask is used for preparing an OLED device, the large-size metal mask is difficult to prepare and high in manufacturing cost, and the metal mask needs to be cleaned regularly after being evaporated for several times, otherwise the metal mask is easy to block.
Fig. 1 to 5 are schematic flow charts of the present embodiment. In this embodiment, the method for preparing the light emitting layer includes the steps of:
s1, firstly, providing a substrate 101, and dividing the substrate into a left region, a middle region and a right region, wherein the areas of the left region, the middle region and the right region on the substrate are consistent;
then, a Hole injection Layer 102 (HIL) is deposited on the substrate 101, and the Hole injection Layer 102 is also divided into a left region, a middle region, and a right region on the substrate.
Subsequently, a hole transport layer 103 (HTL) is deposited on the hole injection layer 102, and the hole transport layer 103 is also divided into a left region, a middle region, and a right region.
S2, forming a green light emitting layer 104 on the substrate 101 by evaporation;
the green light emitting layer 104 covers the hole transport layer 103.
S3, shielding the right area of the substrate 101, and then irradiating the substrate 101 with UV light to destroy the green light emitting layer 104 of the left area and the middle area of the substrate 101 and leave the rightmost green light emitting layer 104;
wherein the wavelength of the UV light is 254 nm, the illuminance of the UV light is 28 megawatts/square centimeter, and the treatment time with the UV light is 600 seconds.
S4, evaporating the red light emitting layer 105 on the substrate 101 processed in the step S3, and forming a red light emitting layer 105 on the surface of the green light emitting layer 104;
s5, shielding the middle area and the right area of the substrate 101, and then irradiating the substrate with UV light to destroy the red light emitting layer 105 of the left area of the substrate 101 and leave the red light emitting layer 105 of the middle area and the right area;
wherein the wavelength of the UV light is 254 nm, the illuminance of the UV light is 28 megawatts/square centimeter, and the treatment time with the UV light is 600 seconds.
S6, evaporating 106 a blue light emitting layer on the substrate 101 processed in the step S5, and forming a blue light emitting layer 106 on the surface of the red light emitting layer 105;
s7, evaporating an electron transport Layer 107 (ETL) on the substrate 101 processed in the step S6, and forming an electron transport Layer 107 on the blue light emitting Layer 106; then, an Electron injection Layer 108 (EIL) is deposited on the Electron transport Layer 107, and finally, a cathode 109 is deposited on the Electron injection Layer 108, and finally, the substrate 101 is packaged;
and S8, after the packaging is finished, conducting voltage-on processing on the packaged device, and damaging the blue light emitting layer 106 in the middle area, the red light emitting layer 105 in the right area and the blue light emitting layer 106.
By using the preparation method of the luminescent layer, the evaporation luminescent layer device of RGB three colors without a color filter and a metal mask can be realized.
In the case of producing a light-emitting layer by using the above production method, the materials of the green light-emitting layer 104, the red light-emitting layer 105, and the blue light-emitting layer 106 need to be examined for the maximum voltage that can be tolerated before applying a voltage to the materials of the light-emitting layer. And evaporation is performed according to the different voltage that can be borne by each layer of light-emitting layer material, and the highest voltage that can be borne by the materials of the green light-emitting layer 104, the red light-emitting layer 105 and the blue light-emitting layer 106 is sequentially decreased in sequence.
Therefore, in this embodiment, the evaporation sequence of the light emitting layers is to evaporate the green light emitting layer 104 first, evaporate the red light emitting layer 105 later, and evaporate the blue light emitting layer 106 last. Wherein the wavelength, illuminance and irradiation time of the UV light also need to be adjusted to adjust the treatment effect of each layer. In this embodiment, the wavelength of the UV light is 254 nm, the illuminance of the UV light is 28 mw/cm, and the processing time using the UV light is 600 seconds, but the invention is not limited to the wavelength, the illuminance, and the irradiation time.
In this embodiment, the processing effects of the green light-emitting layer 104, the red light-emitting layer 105 and the blue light-emitting layer 106 can be controlled by adjusting the voltage value and the energization time of the energization voltage in the step S8.
This embodiment also provides a display device using the light emitting layer prepared by the method for preparing the light emitting layer described in the above embodiment. The preparation method of the light emitting layer is the same as that described in the above embodiments, and the description thereof is not repeated.
The beneficial effects are that: according to the preparation method of the light emitting layer, the RGB light emitting layer is processed through twice UV light irradiation and voltage application, and the OLED light emitting device without a color filter and a metal mask evaporation device is realized.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, so that the scope of the present invention is defined by the appended claims.
Claims (10)
1. A preparation method of a light-emitting layer is characterized by comprising the following steps:
s1, providing a substrate, wherein the substrate comprises a left area, a middle area and a right area;
s2, evaporating a green light emitting layer on the substrate;
s3, irradiating and destroying the green light emitting layer on the left area and the middle area of the substrate with UV light, leaving the green light emitting layer on the right area of the substrate;
s4, evaporating a red light emitting layer on the substrate processed in the step S3;
s5, irradiating and destroying the red light emitting layer on the left side area of the substrate by the UV light, and remaining the red light emitting layer on the middle area and the right side area of the substrate;
s6, evaporating and plating a blue light emitting layer on the substrate processed in the step S5;
s7, evaporating an electron transport layer, an electron injection layer and a cathode on the substrate processed in the step S6, and encapsulating the blue light emitting layer, the green light emitting layer and the red light emitting layer;
and S8, performing voltage applying treatment on the blue light emitting layer, the green light emitting layer and the red light emitting layer packaged in the step S7, destroying the blue light emitting layer on the middle area of the substrate, and destroying the red light emitting layer and the blue light emitting layer on the right area of the substrate.
2. The method of claim 1, wherein the substrate in step S1 is a substrate after evaporation treatment of the hole injection layer and the hole transport layer.
3. The method of claim 1, wherein the UV light has a wavelength of 254 nm in step S3.
4. The method of claim 3, wherein the illuminance of the UV light in step S3 is 28 megawatts per square centimeter.
5. The method of manufacturing a light-emitting layer according to claim 4, wherein the treatment time of the UV light in step S3 is 600 seconds.
6. The method of manufacturing a light-emitting layer according to claim 1, wherein before the blue light-emitting layer, the green light-emitting layer, and the red light-emitting layer are subjected to the passing voltage treatment in step S8, the green light-emitting layer, the red light-emitting layer, and the blue light-emitting layer are subjected to a maximum voltage withstand test.
7. The method of claim 6, wherein the evaporation is performed in a sequence in which the maximum voltages that the green light emitting layer, the red light emitting layer, and the blue light emitting layer can bear are sequentially decreased.
8. The method of claim 7, wherein the blue light emitting layer, the green light emitting layer and the red light emitting layer are sequentially evaporated by first evaporating the green light emitting layer, then evaporating the red light emitting layer and finally evaporating the blue light emitting layer.
9. The method of claim 1, wherein the step S8 further includes adjusting the voltage value of the on voltage and the on time to process the green light emitting layer, the red light emitting layer, and the blue light emitting layer.
10. A display device using the light-emitting layer produced by the method for producing a light-emitting layer according to any one of claims 1 to 9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910362270.XA CN110112304B (en) | 2019-04-30 | 2019-04-30 | Preparation method of light emitting layer and display device |
| PCT/CN2019/105234 WO2020220553A1 (en) | 2019-04-30 | 2019-09-10 | Manufacturing method of light-emitting layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910362270.XA CN110112304B (en) | 2019-04-30 | 2019-04-30 | Preparation method of light emitting layer and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110112304A CN110112304A (en) | 2019-08-09 |
| CN110112304B true CN110112304B (en) | 2020-10-13 |
Family
ID=67487896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910362270.XA Active CN110112304B (en) | 2019-04-30 | 2019-04-30 | Preparation method of light emitting layer and display device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110112304B (en) |
| WO (1) | WO2020220553A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110112304B (en) * | 2019-04-30 | 2020-10-13 | 深圳市华星光电半导体显示技术有限公司 | Preparation method of light emitting layer and display device |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4426190B2 (en) * | 2003-01-24 | 2010-03-03 | 大日本印刷株式会社 | Method for manufacturing electroluminescent device |
| CN101438430A (en) * | 2004-12-30 | 2009-05-20 | E.I.内穆尔杜邦公司 | Device patterning using irradiation |
| JP2009094031A (en) * | 2007-10-12 | 2009-04-30 | Sony Corp | Transfer sheet, manufacturing method for transfer sheet, and manufacturing method for display device |
| JP2009170138A (en) * | 2008-01-11 | 2009-07-30 | Sony Corp | Manufacturing method of display device, composition for display device manufacture, and display device |
| EP2202817B1 (en) * | 2008-12-24 | 2016-06-29 | LG Display Co., Ltd. | Method for manufacturing an organic light emitting display device |
| US20110014739A1 (en) * | 2009-07-16 | 2011-01-20 | Kondakov Denis Y | Making an emissive layer for multicolored oleds |
| CN105097879A (en) * | 2015-07-22 | 2015-11-25 | 深圳市华星光电技术有限公司 | Display panel |
| CN106207015B (en) * | 2016-09-20 | 2018-05-25 | 昆山国显光电有限公司 | A kind of method for blocking the common layer lateral cross talk of OLED luminescent devices |
| CN106549109A (en) * | 2016-10-25 | 2017-03-29 | Tcl集团股份有限公司 | A kind of QLED devices based on p i n structures and preparation method thereof |
| CN110112304B (en) * | 2019-04-30 | 2020-10-13 | 深圳市华星光电半导体显示技术有限公司 | Preparation method of light emitting layer and display device |
-
2019
- 2019-04-30 CN CN201910362270.XA patent/CN110112304B/en active Active
- 2019-09-10 WO PCT/CN2019/105234 patent/WO2020220553A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020220553A1 (en) | 2020-11-05 |
| CN110112304A (en) | 2019-08-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9214642B2 (en) | OLED device and manufacturing method thereof, display apparatus | |
| DE60217489T2 (en) | METHOD FOR PRODUCING FULL-COLOR DISPLAY TABLES | |
| CN108666349B (en) | Color filter substrate, manufacturing method thereof and WOLED display | |
| US10036949B2 (en) | Method for manufacturing photo mask and photo mask manufactured with same | |
| US8871558B2 (en) | Method of manufacturing organic electroluminescent display | |
| EP3279944B1 (en) | Electroluminescent display and display device | |
| KR102185577B1 (en) | OLED substrate and its manufacturing method | |
| WO2018120362A1 (en) | Oled substrate and manufacturing method therefor | |
| CN104091895B (en) | Organic Light Emitting Diode substrate and preparation method thereof, display device | |
| CN107403824B (en) | Method for manufacturing printed display device | |
| DE102013021223A1 (en) | Production of flexible organic electronic devices | |
| KR20150104567A (en) | Apparatus and method for making oled lighting device | |
| DE102013110037A1 (en) | Method for producing a component | |
| CN105378139B (en) | The manufacture method of evaporation coating device, evaporation coating method and organic electroluminescent device | |
| US9287529B2 (en) | Method for fabricating OLED using roll to roll processing | |
| CN110112304B (en) | Preparation method of light emitting layer and display device | |
| US10287669B2 (en) | Mask and method of manufacturing the mask | |
| CN102776473B (en) | Mask device for evaporating organic materials of organic light-emitting diodes | |
| US9048461B2 (en) | Methods of manufacturing OLED pixel and display device | |
| WO2018036258A1 (en) | Oled device and manufacturing method therefor, display panel, and display apparatus | |
| CN107732029A (en) | A kind of OLED display panel and preparation method thereof | |
| TW201127970A (en) | Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using thin film deposition apparatus | |
| US9601559B2 (en) | Structure of an organic device, method and apparatus for patterning the same | |
| DE602005005651T2 (en) | METHOD FOR STRUCTURING A FUNCTIONAL MATERIAL ON A SUBSTRATE | |
| CN107394048A (en) | One kind orientation light extraction Organic Light Emitting Diode and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |