CN110112283A - It is a kind of to be switched from the superconducting thin film of triggering self-shield - Google Patents
It is a kind of to be switched from the superconducting thin film of triggering self-shield Download PDFInfo
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- CN110112283A CN110112283A CN201910485414.0A CN201910485414A CN110112283A CN 110112283 A CN110112283 A CN 110112283A CN 201910485414 A CN201910485414 A CN 201910485414A CN 110112283 A CN110112283 A CN 110112283A
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- Prior art keywords
- thin film
- layer
- superconducting thin
- superconducting
- switch
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- 239000010409 thin film Substances 0.000 title claims abstract description 91
- 239000010410 layer Substances 0.000 claims abstract description 96
- 239000011241 protective layer Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 6
- BTGZYWWSOPEHMM-UHFFFAOYSA-N [O].[Cu].[Y].[Ba] Chemical compound [O].[Cu].[Y].[Ba] BTGZYWWSOPEHMM-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- -1 lanthanum aluminate Chemical class 0.000 claims description 3
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000010791 quenching Methods 0.000 description 2
- 239000002887 superconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/30—Devices switchable between superconducting and normal states
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/84—Switching means for devices switchable between superconducting and normal states
Landscapes
- Superconductors And Manufacturing Methods Therefor (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
Abstract
It can be switched from the superconducting thin film of triggering self-shield the present invention provides a kind of, including superconducting thin film unit, superconducting thin film unit include basal layer；Further include the superconducting thin film switching layer that basal layer side is set, setting the basal layer other side and the symmetrical trigger layer of superconducting thin film switching layer and with the concatenated protective layer of superconducting thin film switching layer；Major loop is connected to after superconducting thin film unit is in parallel with superconducting magnet SM；Trigger layer is connected to trigger circuit；It further include the load resistance R in parallel with superconducting thin film unitL；The present invention integrates superconducting switch from triggering self-protection function, and split row of putting into is effectively protected.
Description
Technical field
The present invention relates to superconducting switch technical fields, and in particular to a kind of to switch from the superconducting thin film of triggering self-shield.
Background technique
Superconducting magnet can not only generate strong stability magnetic field, and can be used as energy-storage travelling wave tube, thus be widely used
To fields such as medical treatment, electric system and industrial productions.And critical component of the superconducting switch as superconducting magnet operation with closed ring, benefit
The lossless operation of closed loop of superconducting magnet is realized with the zero resistance nature of superconductor, while being quenched using superconductor and being generated resistance to break
Open circuit；Superconducting switch can not only constitute the closure tank circuit close to zero ohms thermal losses with superconducting magnet, can also be
The quick release of energy is realized when needing.
Circuit switch device common at present has plasma disconnect switch, and breaking current is big, the switch motion time is short, switch
It is uncontrollable；Explosive charge disconnect switch, speed is fast, it is high-efficient, can only single motion；Electrical Exploding Conductor switch, breaking current is big,
It can only single motion；Mechanical switch, contact resistance is low, switch thermal capacity is big, controls not flexible, slow motion；Semiconductor open circuit is opened
It closes, controllability is high, high-efficient, reusable, open circuit voltage, electric current are lower；Superconducting switch, breaking time is short, response speed
Fastly.
Common superconducting switch has the mechanical superconducting switch of based superconductive bulk；It is light-operated super based on Meisser effect
Lead switch；Superconduction wire type superconducting switch, using its zero resistance nature, be divided into thermal control superconducting switch, flow control type superconducting switch with
And magnet controlled superconducting switch.Currently, most widely used thermal control superconducting switch, but need additional hot trigger circuit.And
And when superconducting magnet operation with closed ring, superconducting switch is quenched and the energy of superconducting magnet superconducting magnet when not quenching all consumes
On the room temperature resistance of superconducting switch, superconducting switch is caused to damage.
Trigger unit, the protection location of traditional superconducting switch are realized by additional circuit, thus entire circuit
Complexity it is higher and stability is lower, be unfavorable for realizing miniaturization, modular application requirement.And superconducting thin film type
The feasibility of superconducting switch be verified (Taizo Tosaka, Kenji Tasaki, Kotaro Marukawa,
Toru Kuriyama, Hiroyuki Nakao, Mutsuhiko Yamaji, Katsuyuki Kuwano, Motohiro
Igarashi, Kaoru Nemoto, and Motoaki Terai. Persistent Current HTS Magnet
Cooled by Cryocooler (4)—Persistent Current Switch Characteristics. IEEE
Transactions On Applied Superconductivity, 15 (2), JUNE 2005).
Summary of the invention
The present invention provide it is a kind of be capable of providing different running currents in one, collection switch, triggering and defencive function it is super
Lead thin film switch.
It is a kind of to be switched from the superconducting thin film of triggering self-shield, including superconducting thin film unit, superconducting thin film unit include base
Bottom；It further include the superconducting thin film switching layer that basal layer side is set, setting is switched in the basal layer other side and superconducting thin film
The symmetrical trigger layer of layer and with the concatenated protective layer of superconducting thin film switching layer；Connect after superconducting thin film unit is in parallel with superconducting magnet SM
It is connected to major loop；Trigger layer is connected to trigger circuit；It further include the load resistance R in parallel with superconducting thin film unitL。
Further, the superconducting thin film switching layer includes the different left superconducting thin film layer and right superconducting thin film of critical current
Layer.
Further, the superconducting thin film switch layer surface is provided with coat of metal.
Further, the trigger layer and protective layer are provided with coat of metal.
Further, the superconducting thin film switching layer, trigger layer, protective layer are yttrium barium copper oxide preparation, with a thickness of 300~
500 nm。
Further, the basal layer is lanthanum aluminate preparation, with a thickness of 0.5cm.
Further, the coat of metal is layer gold, with a thickness of 100~300 nm.
Further, the major loop further includes the diode VD for placing inverse current impulse.
The beneficial effects of the present invention are:
(1) present invention integrates superconducting switch from triggering self-protection function, and split row of putting into is effectively protected；
(2) present invention does not need additional trigger device and additional superconducting switch protection circuit, structure is simple, system can
By degree height；
(3) present invention provides the switch selection of different electric currents, has saved cost, superconducting switch volume greatly reduces.
Detailed description of the invention
Fig. 1 is schematic structural view of the invention.
Fig. 2 is superconducting thin film cellular construction schematic diagram in the present invention.
In figure: 1- superconducting thin film unit, 11- basal layer, 12,15,16,19- coat of metal, the left superconducting thin film layer of 13-,
The lower superconducting thin film layer of 14- first, the right superconducting thin film layer of 17-, the lower superconducting thin film layer of 18- second.
Specific embodiment
The present invention will be further described in the following with reference to the drawings and specific embodiments.
As depicted in figs. 1 and 2, a kind of to surpass from the superconducting thin film switch of triggering self-shield, including superconducting thin film unit 1
Leading film unit 1 includes basal layer 11；Further include the superconducting thin film switching layer that 11 side of basal layer is set, is arranged in basal layer
11 other sides and the symmetrical trigger layer of superconducting thin film switching layer and with the concatenated protective layer of superconducting thin film switching layer；Superconducting thin film list
Major loop is connected to after member 1 is in parallel with superconducting magnet SM；Trigger layer is connected to trigger circuit；Further include and superconducting thin film unit 1
Load resistance R in parallelL.Superconducting thin film switching layer includes the different left superconducting thin film layer 13 and right superconducting thin film layer of critical current
17.Superconducting thin film switch layer surface is provided with coat of metal.Trigger layer and protective layer are provided with coat of metal.It is super
Leading thin film switch layer, trigger layer, protective layer is yttrium barium copper oxide preparation, with a thickness of 300~500 nm.Basal layer 11 is lanthanum aluminate
Preparation, with a thickness of 0.5cm.Coat of metal is layer gold, with a thickness of 100~300 nm.Major loop further includes for placing electric current
The diode VD of recoil.
In use, superconducting thin film unit 1 is arranged in low-temperature (low temperature) vessel, cooled down using liquid nitrogen (77K)；Superconducting thin film is opened
Closing layer includes left superconducting thin film layer 13 and right superconducting thin film layer 17, specifically can require to be selected according to different critical currents.
11 other side of basal layer is provided with the first lower superconducting thin film layer 14 and the second lower superconducting thin film layer 18, the first lower superconducting thin film layer 14
It can be used as trigger layer with the second lower superconducting thin film layer 18 or protective layer use.If selecting left superconducting thin film layer 13 as super
Switch is led, then the first lower superconducting thin film layer 14 is used as trigger layer, and the second lower superconducting thin film layer 18 is used as protective layer；If selection is right
Superconducting thin film layer 17 is used as superconducting switch, then the second lower superconducting thin film layer 18 is used as trigger layer, and the first lower superconducting thin film layer 14 is made
For protective layer.
In use, closure switch S first2, by capacitor C to the first lower superconducting thin film layer 14 or the second lower superconducting thin film layer 18
Electric discharge, makes its generation quench generation room temperature resistance, while generating heat and being opened by the superconduction that basal layer 11 travels to its other side
Close: left superconducting thin film layer 13 or right superconducting thin film layer 17(are selected as the case may be, as required that corresponding superconduction is thin
Membrane switch layer accesses circuit)；Superconducting state is disengaged it from since temperature raises, and then superconducting thin film switching layer is in and disconnects shape
State is closed S1It charges to superconducting magnet SM.Disconnect switch S2So that superconducting switch is replied superconducting state, simultaneously switches off switch S1, superconduction
Magnet SM and superconducting thin film switching layer (left superconducting thin film layer 13 or right superconducting thin film layer 17) enter operation with closed ring；In operation with closed ring
When, when in circuit there are when external disturbance, since the critical current of protective layer is less than the critical current of superconducting thin film switching layer, because
And it generates room temperature resistance and superconducting thin film switching layer is protected.After operation with closed ring, closure switch S3, closure switch S2, make superconduction
Thin film switch layer enters off-state, and superconducting magnet SM is to load resistance R at this timeLElectric discharge, until superconducting magnet SM energy discharge
It completes.
The present invention integrates superconducting switch from triggering, self-protection function, and split row of putting into is effectively protected；And it is not required to
Additional additional trigger device and additional superconducting switch protection circuit are wanted, structure is simple, system reliability degree is high.It is super
Leading thin film switch layer includes left superconducting thin film layer 13 and right superconducting thin film layer 17, it is possible to provide and the switch of different running currents selects,
Cost is saved, superconducting switch volume greatly reduces.
Claims (8)
1. one kind can be from the superconducting thin film switch of triggering self-shield, which is characterized in that including superconducting thin film unit (1), superconduction is thin
Film unit (1) includes basal layer (11)；Further include superconducting thin film switching layer of the setting in basal layer (11) side, is arranged in substrate
Layer (11) other side and the symmetrical trigger layer of superconducting thin film switching layer and with the concatenated protective layer of superconducting thin film switching layer；Superconduction is thin
Major loop is connected to after film unit (1) is in parallel with superconducting magnet SM；Trigger layer is connected to trigger circuit；Further include and superconducting thin film
The load resistance R of unit (1) parallel connectionL。
2. one kind according to claim 1 can be from the superconducting thin film switch of triggering self-shield, which is characterized in that the superconduction
Thin film switch layer includes the different left superconducting thin film layer (13) of critical current and right superconducting thin film layer (13).
3. one kind according to claim 1 can be from the superconducting thin film switch of triggering self-shield, which is characterized in that the superconduction
Thin film switch layer surface is provided with coat of metal.
4. one kind according to claim 3 can be from the superconducting thin film switch of triggering self-shield, which is characterized in that the triggering
Layer and protective layer are provided with coat of metal.
5. one kind according to claim 1 can be from the superconducting thin film switch of triggering self-shield, which is characterized in that the superconduction
Thin film switch layer, trigger layer, protective layer are yttrium barium copper oxide preparation, with a thickness of 300~500nm.
6. one kind according to claim 1 can be from the superconducting thin film switch of triggering self-shield, which is characterized in that the substrate
Layer (11) is lanthanum aluminate preparation, with a thickness of 0.5cm.
7. one kind according to claim 4 can be from the superconducting thin film switch of triggering self-shield, which is characterized in that the metal
Protective layer is layer gold, with a thickness of 100~300nm.
8. one kind according to claim 1 can be from the superconducting thin film switch of triggering self-shield, which is characterized in that the master returns
Road further includes the diode VD for placing inverse current impulse.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910485414.0A CN110112283A (en) | 2019-06-05 | 2019-06-05 | It is a kind of to be switched from the superconducting thin film of triggering self-shield |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910485414.0A CN110112283A (en) | 2019-06-05 | 2019-06-05 | It is a kind of to be switched from the superconducting thin film of triggering self-shield |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110112283A true CN110112283A (en) | 2019-08-09 |
Family
ID=67494015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910485414.0A Pending CN110112283A (en) | 2019-06-05 | 2019-06-05 | It is a kind of to be switched from the superconducting thin film of triggering self-shield |
Country Status (1)
| Country | Link |
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| CN (1) | CN110112283A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006332559A (en) * | 2005-05-30 | 2006-12-07 | Toshiba Corp | Persistent current superconducting magnet and persistent current switch used therefor |
| CN102931339A (en) * | 2012-11-02 | 2013-02-13 | 西南交通大学 | Superconducting switch with two-sided yttrium barium copper oxide (YBCO) thin film structure |
| CN106876573A (en) * | 2017-03-23 | 2017-06-20 | 西南交通大学 | A kind of double sided superconducting film switch |
| CN209947873U (en) * | 2019-06-05 | 2020-01-14 | 西南交通大学 | Self-triggering self-protection superconducting thin film switch |
-
2019
- 2019-06-05 CN CN201910485414.0A patent/CN110112283A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006332559A (en) * | 2005-05-30 | 2006-12-07 | Toshiba Corp | Persistent current superconducting magnet and persistent current switch used therefor |
| CN102931339A (en) * | 2012-11-02 | 2013-02-13 | 西南交通大学 | Superconducting switch with two-sided yttrium barium copper oxide (YBCO) thin film structure |
| CN106876573A (en) * | 2017-03-23 | 2017-06-20 | 西南交通大学 | A kind of double sided superconducting film switch |
| CN209947873U (en) * | 2019-06-05 | 2020-01-14 | 西南交通大学 | Self-triggering self-protection superconducting thin film switch |
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