CN110112153A - A kind of TOF imaging sensor demodulation pixel structure of charge fast transfer - Google Patents
A kind of TOF imaging sensor demodulation pixel structure of charge fast transfer Download PDFInfo
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- CN110112153A CN110112153A CN201910289811.0A CN201910289811A CN110112153A CN 110112153 A CN110112153 A CN 110112153A CN 201910289811 A CN201910289811 A CN 201910289811A CN 110112153 A CN110112153 A CN 110112153A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 26
- 229920005591 polysilicon Polymers 0.000 claims abstract description 25
- 230000003287 optical effect Effects 0.000 claims abstract description 19
- 238000009792 diffusion process Methods 0.000 claims abstract description 15
- 238000007667 floating Methods 0.000 claims abstract description 12
- 230000005540 biological transmission Effects 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 230000005684 electric field Effects 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The present invention discloses a kind of TOF imaging sensor demodulation pixel structure of charge fast transfer, including double floating diffusion node 4T pixel units based on PPD, double floating diffusion node 4T pixel units based on PPD have two transfer tubes for being responsible for that optical charge is transferred to double FD nodes from PPD, will it is characterized in that, the grid of each transfer tube uses multiple adjacent polysilicon grids with minimum widith, multiple polysilicon gates are connect with electric resistance array, it is powered by the electric resistance array to the polysilicon gate, so that there is incremental grid voltage on the polysilicon gate, the grid voltage is capacitively coupled to the drift field in semiconductor and forming a transverse direction.The present invention, which passes through, replaces transmission tube grid with multiple adjacent polysilicon grid with minimum widith, and makes to transmit the lateral drift field for forming optical charge below tube grid plus incremental voltage on grid, accelerates the transfer of optical charge.
Description
Technical field
The present invention relates to image sensor technologies fields, more particularly to a kind of TOF image sensing of charge fast transfer
Device demodulation pixel structure.
Background technique
TOF imaging sensor demodulation pixel structure based on clamper photodiode (pinned photodiode, PPD)
In, it is by the diffusion control in semiconductor that optical charge, which is transferred to FD node, in PPD, and the optical charge that PPD is generated can only lead to
The diffusion crossed in semiconductor is shifted, and the serious transfer velocity for influencing optical charge of this point limits pixel in height
It is used under modulating frequency, it is slow due to diffusion process, it will affect the performance of PPD.Some schemes by change device shape come
Biggish photosensitive area is obtained, the generation of optical charge is increased；Also have and increase the injection of photosensitive region impurity to optimize PDD performance；
There are also the buried channel quickening optical charge transmission speeds under transfer tube TX1 and TX2 grid.
Summary of the invention
In view of the technical drawbacks of the prior art, it is an object of the present invention to provide a kind of quickening Photocharge transfers
Based on the TOF imaging sensor demodulation pixel structure of clamper photodiode (pinned photodiode, PPD), pass through change
Transfer tube gate structure, to accelerate Photocharge transfer.
The technical solution adopted to achieve the purpose of the present invention is:
A kind of TOF imaging sensor demodulation pixel structure of charge fast transfer, comprising:, the diffusion of double floatings based on PPD
Node 4T pixel unit, double floating diffusion node 4T pixel units based on PPD, which have, to be responsible for shifting optical charge from PPD
It, will be it is characterized in that, the grid of each transfer tube has minimum widith using multiple to two transfer tubes of double FD nodes
Adjacent polysilicon grid, multiple polysilicon gates are connect with electric resistance array, by the electric resistance array to the polycrystalline
Silicon gate power supply, so that there is incremental grid voltage on the polysilicon gate, the grid voltage is capacitively coupled to half
The drift field of a transverse direction is formed in conductor, to accelerate to be transferred to the transmission speed of the optical charge of FD node from generating region
Degree.
Each resistance in the electric resistance array is identical.
Each polysilicon gate connects a resistance in a corresponding electric resistance array.
Compared with prior art, the beneficial effects of the present invention are:
The invention proposes a kind of TOF imaging sensor demodulation pixel structure of charge fast transfer, by by transfer tube
TX1 and TX2 grid is replaced with multiple adjacent polysilicon grid with minimum widith, and is made on grid plus incremental voltage
The lateral drift field for forming optical charge below tube grid is transmitted, the transfer of optical charge is accelerated.
Detailed description of the invention
Fig. 1 show existing double floating diffusion node 4T dot structures based on PPD；
Fig. 2 show the TOF imaging sensor demodulation pixel structure of quickening electric charge transfer of the invention.
Specific embodiment
The present invention is described in further detail below in conjunction with the drawings and specific embodiments.It should be appreciated that described herein
Specific embodiment be only used to explain the present invention, be not intended to limit the present invention.
As shown in Figure 1, existing double floating diffusion node 4T dot structures based on PPD, include clamper photodiode
PPD, transfer tube (TX1, TX2), reset transistor RST, floating diffusion node (FD1, FD2), row gate tube (RS1, RS2) and source electrode with
With device (SF1, SF2), floating diffusion node (FD1, FD2) is connected by transfer tube (TX1, TX2) and clamper photodiode PPD
Connect, and with source follower (SF1, SF2) and reset transistor RST connection, reset transistor RST and source follower (SF1, SF2) with
VDD connection, source follower (SF1, SF2) and row gate tube (RS1, RS2), row gate tube (RS1, RS2) are connect with bus.
When work, transfer tube TX1 and transfer tube TX2 pipe are alternately opened, if transfer tube TX1 pipe is first opened, transfer tube TX2
Pipe shutdown, the Photocharge transfer of accumulation read through row gate tube and column grade reading circuit at floating diffusion node FD1, complete
To the integral of a certain phase；Subsequent transfer tube TX2 pipe is opened, and the shutdown of transfer tube TX1 pipe completes another phase by identical process
It reads, such double one frames of FD dot structure can read the information of two phases, and two frames can obtain TOF imaging sensor
The information of four required phases.
It is by will be former as shown in Fig. 2, the TOF imaging sensor demodulation pixel structure of charge fast transfer of the invention
The grid of transfer tube TX1 and transfer tube TX2 in double floating diffusion point structures have with 7 (being directed to demand, can be more)
The adjacent polysilicon of minimum widith replaces, and powers in the corresponding electric resistance array of pixel external application to these polysilicon gates, makes
Obtaining on polysilicon gate has incremental voltage, and grid voltage is capacitively coupled in semiconductor, forms the drift of a transverse direction
Electric field accelerates the transmission speed that the optical charge of FD node is transferred to from generating region.
It is in the present invention that the gate structure of transfer tube TX1 and TX2 in original structure is adjacent more with minimum widith with 7
Crystal silicon replaces, and forms polysilicon gate 10, these adjacent polysilicon gates need it is adjacent it is close come by capacitive coupling half
Stable lateral drift field is formed in conductor, but due to the electric conductivity of polysilicon, polysilicon gate cannot contact with each other, in picture
The electric resistance array 20 of plain external application (is formed by multiple resistance 21 by the connection of conducting wire 22, the input terminal of each resistance 21 and more than one
Polysilicon gate connection, output end connect with adjacent polysilicon gate 10 and connect with the input terminal of adjacent resistor 21), Resistor Array Projector
Each resistance in column 20 is identical, the burning voltage of 7V is added between the V1 and VD of each electric resistance array, due to resistance value
Identical, each resistance both ends generate the pressure drop of 1V voltage, so that is supplied on polysilicon gate is incremental voltage, grid electricity
Pressure is capacitively coupled in semiconductor, forms the drift field of a transverse direction, accelerates to be transferred to FD node from generating region
The transmission speed of optical charge.
The present invention proposes the TOF imaging sensor demodulation pixel structure of charge fast transfer, and suitable for adjusting the distance, precision is wanted
TOF imaging sensor high, that reaction speed is fast is sought, this kind of pixel needs high modulation light frequency to collect the phase of characterization depth information
Position charge, the transverse electric field of the generation of transmission tube grid in the semiconductors makes optical charge fast transport in this structure, to a high-profile
Under light processed also can quick transfer charge, improve precision.
The demodulation pixel structure proposed by the present invention for accelerating electric charge transfer can be formed in transmission tube grid lower semiconductor
The lateral drift electric field for making optical charge fast transport, compared with traditional demodulation pixel, what this structure improved optical charge transports energy
Power improves the working characteristics of device significantly, and TOF imaging sensor is enable to detect the light of high modulation frequency.
The above is only a preferred embodiment of the present invention, it is noted that for the common skill of the art
For art personnel, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications
Also it should be regarded as protection scope of the present invention.
Claims (3)
1. the TOF imaging sensor demodulation pixel structure of a kind of charge fast transfer, including double floating diffusion nodes based on PPD
4T pixel unit, double floating diffusion node 4T pixel units based on PPD are double with being responsible for for optical charge being transferred to from PPD
Two transfer tubes of FD node, will be it is characterized in that, the grid of each transfer tube uses multiple phases with minimum widith
Adjacent polysilicon gate, multiple polysilicon gates are connect with electric resistance array, by the electric resistance array to the polysilicon gate
Pole power supply, so that there is incremental grid voltage on the polysilicon gate, the grid voltage is capacitively coupled to semiconductor
In and form the drift field of a transverse direction, to accelerate to be transferred to from generating region the transmission speed of the optical charge of FD node.
2. the TOF imaging sensor demodulation pixel structure of charge fast transfer as described in claim 1, which is characterized in that described
Each resistance in electric resistance array is identical.
3. the TOF imaging sensor demodulation pixel structure of charge fast transfer as described in claim 1, which is characterized in that each
The polysilicon gate connects a resistance in a corresponding electric resistance array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910289811.0A CN110112153A (en) | 2019-04-11 | 2019-04-11 | A kind of TOF imaging sensor demodulation pixel structure of charge fast transfer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910289811.0A CN110112153A (en) | 2019-04-11 | 2019-04-11 | A kind of TOF imaging sensor demodulation pixel structure of charge fast transfer |
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| CN201910289811.0A Pending CN110112153A (en) | 2019-04-11 | 2019-04-11 | A kind of TOF imaging sensor demodulation pixel structure of charge fast transfer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111599828A (en) * | 2020-03-06 | 2020-08-28 | 长春长光辰芯光电技术有限公司(日本) | Pixel for solid-state imaging device |
| CN112399103A (en) * | 2019-08-12 | 2021-02-23 | 天津大学青岛海洋技术研究院 | Reset noise suppression method for TOF image sensor |
| CN114339087A (en) * | 2020-09-30 | 2022-04-12 | 思特威(上海)电子科技股份有限公司 | TOF image sensor pixel structure and ranging system |
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| CN101060128A (en) * | 2006-04-20 | 2007-10-24 | 株式会社东芝 | Solid-state imaging device |
| KR20080059772A (en) * | 2006-12-26 | 2008-07-01 | 동부일렉트로닉스 주식회사 | Method for fabricating of charge coupled device image sensor |
| CN103152529A (en) * | 2013-02-27 | 2013-06-12 | 天津大学 | Pixel structure for improving charge transfer efficiency and reducing dark current and working method of pixel structure |
| CN108417593A (en) * | 2018-02-27 | 2018-08-17 | 上海集成电路研发中心有限公司 | Imaging sensor, dot structure and its control method |
-
2019
- 2019-04-11 CN CN201910289811.0A patent/CN110112153A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101060128A (en) * | 2006-04-20 | 2007-10-24 | 株式会社东芝 | Solid-state imaging device |
| KR20080059772A (en) * | 2006-12-26 | 2008-07-01 | 동부일렉트로닉스 주식회사 | Method for fabricating of charge coupled device image sensor |
| CN103152529A (en) * | 2013-02-27 | 2013-06-12 | 天津大学 | Pixel structure for improving charge transfer efficiency and reducing dark current and working method of pixel structure |
| CN108417593A (en) * | 2018-02-27 | 2018-08-17 | 上海集成电路研发中心有限公司 | Imaging sensor, dot structure and its control method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112399103A (en) * | 2019-08-12 | 2021-02-23 | 天津大学青岛海洋技术研究院 | Reset noise suppression method for TOF image sensor |
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| CN114339087A (en) * | 2020-09-30 | 2022-04-12 | 思特威(上海)电子科技股份有限公司 | TOF image sensor pixel structure and ranging system |
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Application publication date: 20190809 |